TWI551856B - 光子發射的光譜套圖 - Google Patents
光子發射的光譜套圖 Download PDFInfo
- Publication number
- TWI551856B TWI551856B TW104111375A TW104111375A TWI551856B TW I551856 B TWI551856 B TW I551856B TW 104111375 A TW104111375 A TW 104111375A TW 104111375 A TW104111375 A TW 104111375A TW I551856 B TWI551856 B TW I551856B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- objective lens
- grating
- sensor
- order
- Prior art date
Links
- 230000003595 spectral effect Effects 0.000 title claims description 30
- 238000013507 mapping Methods 0.000 title description 2
- 230000003287 optical effect Effects 0.000 claims description 85
- 230000005540 biological transmission Effects 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 42
- 238000001228 spectrum Methods 0.000 claims description 32
- 238000012360 testing method Methods 0.000 claims description 25
- 238000003384 imaging method Methods 0.000 claims description 11
- 229920006395 saturated elastomer Polymers 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 6
- 238000007654 immersion Methods 0.000 claims description 4
- 238000004804 winding Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 11
- 230000003068 static effect Effects 0.000 description 9
- 230000005284 excitation Effects 0.000 description 8
- 230000004044 response Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000000835 fiber Substances 0.000 description 6
- 238000000386 microscopy Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Engineering & Computer Science (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Spectrometry And Color Measurement (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Microscoopes, Condenser (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461978173P | 2014-04-10 | 2014-04-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201538965A TW201538965A (zh) | 2015-10-16 |
| TWI551856B true TWI551856B (zh) | 2016-10-01 |
Family
ID=54264886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104111375A TWI551856B (zh) | 2014-04-10 | 2015-04-09 | 光子發射的光譜套圖 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9903824B2 (enExample) |
| JP (1) | JP6313259B2 (enExample) |
| SG (1) | SG10201502809YA (enExample) |
| TW (1) | TWI551856B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015175851A (ja) | 2014-03-13 | 2015-10-05 | ディーシージー システムズ、 インコーポライテッドＤｃｇ Ｓｙｓｔｅｍｓ Ｉｎｃ． | 発光スペクトル分析による欠陥の分離のためのシステムと方法 |
| US9903824B2 (en) | 2014-04-10 | 2018-02-27 | Fei Efa, Inc. | Spectral mapping of photo emission |
| US10712667B2 (en) * | 2016-12-14 | 2020-07-14 | Asml Netherlands B.V. | Optical device and associated system |
| US11294165B2 (en) * | 2017-03-30 | 2022-04-05 | The Board Of Trustees Of The Leland Stanford Junior University | Modular, electro-optical device for increasing the imaging field of view using time-sequential capture |
| JP6954775B2 (ja) * | 2017-06-29 | 2021-10-27 | 浜松ホトニクス株式会社 | デバイス解析装置及びデバイス解析方法 |
| CN112422796B (zh) * | 2020-11-17 | 2023-04-07 | 维沃移动通信有限公司 | 摄像头结构、摄像控制方法、装置及电子设备 |
| WO2024241626A1 (ja) | 2023-05-19 | 2024-11-28 | 浜松ホトニクス株式会社 | 検査装置及び検査方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200944821A (en) * | 2007-12-07 | 2009-11-01 | Freescale Semiconductor Inc | Method for testing a semiconductor device and a semiconductor device testing system |
| CN101344731B (zh) * | 2007-06-29 | 2011-01-12 | Asml荷兰有限公司 | 用于透射图像感应的装置和方法 |
| US20110043775A1 (en) * | 2009-08-20 | 2011-02-24 | Asml Netherlands B.V. | Lithographic apparatus, distortion determining method, and patterning device |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5220403A (en) | 1991-03-11 | 1993-06-15 | International Business Machines Corporation | Apparatus and a method for high numerical aperture microscopic examination of materials |
| US5208648A (en) | 1991-03-11 | 1993-05-04 | International Business Machines Corporation | Apparatus and a method for high numerical aperture microscopic examination of materials |
| US5940545A (en) | 1996-07-18 | 1999-08-17 | International Business Machines Corporation | Noninvasive optical method for measuring internal switching and other dynamic parameters of CMOS circuits |
| US6621275B2 (en) | 2001-11-28 | 2003-09-16 | Optonics Inc. | Time resolved non-invasive diagnostics system |
| US6943572B2 (en) | 2002-09-03 | 2005-09-13 | Credence Systems Corporation | Apparatus and method for detecting photon emissions from transistors |
| US6891363B2 (en) * | 2002-09-03 | 2005-05-10 | Credence Systems Corporation | Apparatus and method for detecting photon emissions from transistors |
| US7012537B2 (en) | 2004-02-10 | 2006-03-14 | Credence Systems Corporation | Apparatus and method for determining voltage using optical observation |
| US7110172B2 (en) * | 2004-02-27 | 2006-09-19 | Hamamatsu Photonics K.K. | Microscope and sample observation method |
| US7327452B2 (en) * | 2004-08-09 | 2008-02-05 | Credence Systems Corporation | Light beam apparatus and method for orthogonal alignment of specimen |
| JP5187843B2 (ja) * | 2008-09-01 | 2013-04-24 | 浜松ホトニクス株式会社 | 半導体検査装置及び検査方法 |
| SG10201506637YA (en) * | 2009-05-01 | 2015-10-29 | Dcg Systems Inc | Systems and method for laser voltage imaging state mapping |
| JP2012037310A (ja) * | 2010-08-05 | 2012-02-23 | Renesas Electronics Corp | 半導体集積回路の故障解析装置及び故障解析方法 |
| JP2015175851A (ja) | 2014-03-13 | 2015-10-05 | ディーシージー システムズ、 インコーポライテッドＤｃｇ Ｓｙｓｔｅｍｓ Ｉｎｃ． | 発光スペクトル分析による欠陥の分離のためのシステムと方法 |
| US9903824B2 (en) | 2014-04-10 | 2018-02-27 | Fei Efa, Inc. | Spectral mapping of photo emission |
-
2015
- 2015-04-08 US US14/682,057 patent/US9903824B2/en active Active
- 2015-04-09 JP JP2015080148A patent/JP6313259B2/ja active Active
- 2015-04-09 TW TW104111375A patent/TWI551856B/zh active
- 2015-04-10 SG SG10201502809YA patent/SG10201502809YA/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101344731B (zh) * | 2007-06-29 | 2011-01-12 | Asml荷兰有限公司 | 用于透射图像感应的装置和方法 |
| TW200944821A (en) * | 2007-12-07 | 2009-11-01 | Freescale Semiconductor Inc | Method for testing a semiconductor device and a semiconductor device testing system |
| US20110043775A1 (en) * | 2009-08-20 | 2011-02-24 | Asml Netherlands B.V. | Lithographic apparatus, distortion determining method, and patterning device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015203700A (ja) | 2015-11-16 |
| TW201538965A (zh) | 2015-10-16 |
| US9903824B2 (en) | 2018-02-27 |
| JP6313259B2 (ja) | 2018-04-18 |
| US20150293037A1 (en) | 2015-10-15 |
| SG10201502809YA (en) | 2015-11-27 |
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