TWI550788B - 半導體元件用放熱零件 - Google Patents

半導體元件用放熱零件 Download PDF

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Publication number
TWI550788B
TWI550788B TW101126890A TW101126890A TWI550788B TW I550788 B TWI550788 B TW I550788B TW 101126890 A TW101126890 A TW 101126890A TW 101126890 A TW101126890 A TW 101126890A TW I550788 B TWI550788 B TW I550788B
Authority
TW
Taiwan
Prior art keywords
aluminum
layer
composite
diamond
metal
Prior art date
Application number
TW101126890A
Other languages
English (en)
Chinese (zh)
Other versions
TW201314850A (zh
Inventor
Hideki Hirotsuru
Hideo Tsukamoto
Yosuke Ishihara
Original Assignee
Denka Company Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denka Company Ltd filed Critical Denka Company Ltd
Publication of TW201314850A publication Critical patent/TW201314850A/zh
Application granted granted Critical
Publication of TWI550788B publication Critical patent/TWI550788B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D18/00—Pressure casting; Vacuum casting
    • B22D18/02—Pressure casting making use of mechanical pressure devices, e.g. cast-forging
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/016—Layered products comprising a layer of metal all layers being exclusively metallic all layers being formed of aluminium or aluminium alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C45/00—Amorphous alloys
    • C22C45/04—Amorphous alloys with nickel or cobalt as the major constituent
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
TW101126890A 2011-07-28 2012-07-26 半導體元件用放熱零件 TWI550788B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011165009 2011-07-28

Publications (2)

Publication Number Publication Date
TW201314850A TW201314850A (zh) 2013-04-01
TWI550788B true TWI550788B (zh) 2016-09-21

Family

ID=47601008

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101126890A TWI550788B (zh) 2011-07-28 2012-07-26 半導體元件用放熱零件

Country Status (8)

Country Link
US (1) US9524918B2 (ja)
EP (1) EP2738802B1 (ja)
JP (1) JP5988977B2 (ja)
KR (1) KR101986860B1 (ja)
CN (1) CN103733331B (ja)
CA (1) CA2843371C (ja)
TW (1) TWI550788B (ja)
WO (1) WO2013015158A1 (ja)

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FR3008825B1 (fr) 2013-07-18 2016-12-09 Soc Francaise De Detecteurs Infrarouges - Sofradir Doigt froid ameliore et dispositif de detection comportant le doigt froid
JP6079505B2 (ja) * 2013-08-26 2017-02-15 三菱マテリアル株式会社 接合体及びパワーモジュール用基板
JP6621736B2 (ja) * 2014-04-25 2019-12-18 デンカ株式会社 アルミニウム−ダイヤモンド系複合体及びこれを用いた放熱部品
WO2015182576A1 (ja) * 2014-05-27 2015-12-03 電気化学工業株式会社 半導体パッケージ及びその製造方法
WO2016002925A1 (ja) * 2014-07-03 2016-01-07 電気化学工業株式会社 複合体とその製造方法
JP6636924B2 (ja) * 2014-07-31 2020-01-29 デンカ株式会社 アルミニウム‐炭化珪素質複合体及びその製造方法
EP3190613B1 (en) * 2014-09-02 2019-05-15 A.L.M.T. Corp. Heat dissipation member and method for producing heat dissipation member
WO2016035789A1 (ja) * 2014-09-02 2016-03-10 電気化学工業株式会社 半導体素子用放熱部品
WO2017065139A1 (ja) * 2015-10-13 2017-04-20 デンカ株式会社 アルミニウム－ダイヤモンド系複合体及びその製造方法
GB201621690D0 (en) 2016-12-20 2017-02-01 Element Six Tech Ltd A heat sink comprising synthetic diamond material
JP7000347B2 (ja) * 2016-12-28 2022-01-19 デンカ株式会社 半導体素子用放熱部品
CN107739948B (zh) * 2017-10-31 2019-05-17 哈尔滨工业大学 一种金刚石/铝复合材料及其高效率制备方法
CN107760951B (zh) * 2017-10-31 2019-05-17 哈尔滨工业大学 一种金刚石/铝复合材料及其低成本制备方法
JP7101754B2 (ja) * 2018-02-14 2022-07-15 住友電気工業株式会社 複合部材、及び複合部材の製造方法
DE102018210141A1 (de) 2018-06-21 2019-12-24 Trumpf Photonics, Inc. Diodenlaseranordnung und Verfahren zur Herstellung einer Diodenlaseranordnung
JP7116689B2 (ja) * 2019-01-30 2022-08-10 デンカ株式会社 放熱部材およびその製造方法
WO2020203014A1 (ja) * 2019-04-02 2020-10-08 住友電気工業株式会社 複合部材、及び放熱部材
US20220304186A1 (en) * 2021-03-17 2022-09-22 Amulaire Thermal Technology, Inc. Heat-dissipating substrate with coating structure
US20230191528A1 (en) * 2021-12-22 2023-06-22 Spirit Aerosystems, Inc. Method for manufacturing metal matrix composite parts
CN117855157B (zh) * 2024-03-07 2024-05-14 中国电子科技集团公司第二十九研究所 一种毫米波固态功率放大器的封装结构及方法

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JP2008258511A (ja) * 2007-04-09 2008-10-23 Toshiba Corp 半導体装置及び半導体装置の製造方法
US20110123821A1 (en) * 2008-07-17 2011-05-26 Denki Kagaku Kogyo Kabushiki Kaisha Aluminum-diamond composite and manufacturing method

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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2008258511A (ja) * 2007-04-09 2008-10-23 Toshiba Corp 半導体装置及び半導体装置の製造方法
US20110123821A1 (en) * 2008-07-17 2011-05-26 Denki Kagaku Kogyo Kabushiki Kaisha Aluminum-diamond composite and manufacturing method

Also Published As

Publication number Publication date
CN103733331B (zh) 2017-03-22
KR101986860B1 (ko) 2019-06-07
CA2843371A1 (en) 2013-01-31
CN103733331A (zh) 2014-04-16
CA2843371C (en) 2018-07-31
TW201314850A (zh) 2013-04-01
KR20140063618A (ko) 2014-05-27
US9524918B2 (en) 2016-12-20
JP5988977B2 (ja) 2016-09-07
JPWO2013015158A1 (ja) 2015-02-23
WO2013015158A1 (ja) 2013-01-31
EP2738802A4 (en) 2015-03-18
US20140182824A1 (en) 2014-07-03
EP2738802B1 (en) 2016-06-29
EP2738802A1 (en) 2014-06-04

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