TWI548933B - 遮罩基底、轉印用遮罩以及半導體裝置之製造方法 - Google Patents

遮罩基底、轉印用遮罩以及半導體裝置之製造方法 Download PDF

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Publication number
TWI548933B
TWI548933B TW101132435A TW101132435A TWI548933B TW I548933 B TWI548933 B TW I548933B TW 101132435 A TW101132435 A TW 101132435A TW 101132435 A TW101132435 A TW 101132435A TW I548933 B TWI548933 B TW I548933B
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TW
Taiwan
Prior art keywords
film
mask
substrate
layer
hydrogen
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TW101132435A
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English (en)
Chinese (zh)
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TW201327029A (zh
Inventor
宍戶博明
野澤順
小湊淳志
Original Assignee
Ｈｏｙａ股份有限公司
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Publication of TW201327029A publication Critical patent/TW201327029A/zh
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Publication of TWI548933B publication Critical patent/TWI548933B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3423—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings comprising a suboxide
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3435—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a nitride, oxynitride, boronitride or carbonitride
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW101132435A 2011-09-07 2012-09-06 遮罩基底、轉印用遮罩以及半導體裝置之製造方法 TWI548933B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011195078 2011-09-07

Publications (2)

Publication Number Publication Date
TW201327029A TW201327029A (zh) 2013-07-01
TWI548933B true TWI548933B (zh) 2016-09-11

Family

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Family Applications (1)

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TW101132435A TWI548933B (zh) 2011-09-07 2012-09-06 遮罩基底、轉印用遮罩以及半導體裝置之製造方法

Country Status (4)

Country Link
US (1) US8846274B2 (enExample)
JP (1) JP5997530B2 (enExample)
KR (1) KR101925644B1 (enExample)
TW (1) TWI548933B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6066802B2 (ja) * 2013-03-29 2017-01-25 Hoya株式会社 マスクブランクの製造方法及び転写用マスクの製造方法
KR102046729B1 (ko) 2013-09-24 2019-11-19 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 및 반도체 디바이스의 제조방법
WO2016185941A1 (ja) * 2015-05-15 2016-11-24 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
DE102018115594A1 (de) * 2018-06-28 2020-01-02 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit druckverspannter schicht und verfahren zur herstellung des halbleiterbauelements mit druckverspannter schicht
JP7671779B2 (ja) * 2020-04-14 2025-05-02 ラシルク，インコーポレイテッド 水素劣化の抑制

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050244722A1 (en) * 2004-03-31 2005-11-03 Shin-Etsu Chemical Co., Ltd. Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
TW201115263A (en) * 2009-07-16 2011-05-01 Hoya Corp Mask blank and transfer mask
JP2011139050A (ja) * 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

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JPS57161856A (en) * 1981-03-31 1982-10-05 Dainippon Printing Co Ltd Photomask
JPS6280655A (ja) * 1985-10-04 1987-04-14 Toppan Printing Co Ltd フオトマスクブランクおよびフオトマスク
JPH0650388B2 (ja) * 1986-04-04 1994-06-29 アルバツク成膜株式会社 フオトマスクおよびその製造方法
US4868093A (en) * 1987-05-01 1989-09-19 American Telephone And Telegraph Company, At&T Bell Laboratories Device fabrication by X-ray lithography utilizing stable boron nitride mask
JPH0334310A (ja) * 1989-06-29 1991-02-14 Shimadzu Corp Ｘ線用マスクブランクの製造方法
JP4213412B2 (ja) * 2002-06-26 2009-01-21 東ソー株式会社 真空紫外光用合成石英ガラス、その製造方法及びこれを用いた真空紫外光用マスク基板
JP4348536B2 (ja) * 2004-03-31 2009-10-21 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
JP4407815B2 (ja) 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4845978B2 (ja) 2008-02-27 2011-12-28 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスク並びにフォトマスクの製造方法
JP5119058B2 (ja) * 2008-06-19 2013-01-16 太陽誘電株式会社 薄膜キャパシタ
JP2010192503A (ja) * 2009-02-16 2010-09-02 Seiko Epson Corp フォトマスクおよびフォトマスクの製造方法
JP2010211064A (ja) * 2009-03-11 2010-09-24 Toppan Printing Co Ltd フォトマスク及びその製造方法
JP2010225928A (ja) * 2009-03-24 2010-10-07 Panasonic Corp 半導体記憶装置及びその製造方法
JP5333016B2 (ja) * 2009-07-31 2013-11-06 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP6157874B2 (ja) * 2012-03-19 2017-07-05 Hoya株式会社 Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050244722A1 (en) * 2004-03-31 2005-11-03 Shin-Etsu Chemical Co., Ltd. Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
TW201115263A (en) * 2009-07-16 2011-05-01 Hoya Corp Mask blank and transfer mask
JP2011139050A (ja) * 2009-12-04 2011-07-14 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法

Also Published As

Publication number Publication date
US8846274B2 (en) 2014-09-30
JP2013068934A (ja) 2013-04-18
KR101925644B1 (ko) 2018-12-05
TW201327029A (zh) 2013-07-01
JP5997530B2 (ja) 2016-09-28
KR20130027440A (ko) 2013-03-15
US20130059236A1 (en) 2013-03-07

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