TWI548762B - Alumina film containing tantalum - Google Patents
Alumina film containing tantalum Download PDFInfo
- Publication number
- TWI548762B TWI548762B TW101148080A TW101148080A TWI548762B TW I548762 B TWI548762 B TW I548762B TW 101148080 A TW101148080 A TW 101148080A TW 101148080 A TW101148080 A TW 101148080A TW I548762 B TWI548762 B TW I548762B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- alumina
- sputtering
- sputtering target
- present
- Prior art date
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims description 60
- 229910052715 tantalum Inorganic materials 0.000 title description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title description 2
- 239000010408 film Substances 0.000 claims description 232
- 230000015572 biosynthetic process Effects 0.000 claims description 67
- 238000004544 sputter deposition Methods 0.000 claims description 40
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 10
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 238000010248 power generation Methods 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 238000005477 sputtering target Methods 0.000 description 79
- 238000000034 method Methods 0.000 description 43
- 229910000765 intermetallic Inorganic materials 0.000 description 40
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 32
- 229910052760 oxygen Inorganic materials 0.000 description 32
- 239000001301 oxygen Substances 0.000 description 32
- 239000007789 gas Substances 0.000 description 25
- 239000002245 particle Substances 0.000 description 20
- 229910000838 Al alloy Inorganic materials 0.000 description 18
- 238000001039 wet etching Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 12
- 238000005259 measurement Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 238000005096 rolling process Methods 0.000 description 12
- 238000000137 annealing Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000005187 foaming Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000007921 spray Substances 0.000 description 8
- 238000001513 hot isostatic pressing Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005546 reactive sputtering Methods 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000005097 cold rolling Methods 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000003814 drug Substances 0.000 description 4
- 235000013305 food Nutrition 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 229910007541 Zn O Inorganic materials 0.000 description 3
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005242 forging Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005098 hot rolling Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- -1 aluminum alkoxide Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000010730 cutting oil Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- KJYQVRBDBPBZTD-UHFFFAOYSA-N methanol;nitric acid Chemical compound OC.O[N+]([O-])=O KJYQVRBDBPBZTD-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011282175 | 2011-12-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201331396A TW201331396A (zh) | 2013-08-01 |
| TWI548762B true TWI548762B (zh) | 2016-09-11 |
Family
ID=48633899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101148080A TWI548762B (zh) | 2011-12-22 | 2012-12-18 | Alumina film containing tantalum |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2013147738A (ko) |
| KR (1) | KR101471254B1 (ko) |
| CN (1) | CN103173718B (ko) |
| TW (1) | TWI548762B (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6574714B2 (ja) * | 2016-01-25 | 2019-09-11 | 株式会社コベルコ科研 | 配線構造およびスパッタリングターゲット |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201022176A (en) * | 2008-12-15 | 2010-06-16 | Idemitsu Kosan Co | Indium oxide sintered compact and sputtering target |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3009533C2 (de) * | 1980-03-12 | 1986-11-06 | D. Swarovski & Co., Wattens, Tirol | Belag mit mittlerem Brechwert, Verfahren zu dessen Herstellung und Verwendung des Belages |
| JPH0421774A (ja) * | 1990-05-16 | 1992-01-24 | Matsushita Electric Ind Co Ltd | 複合物薄膜の製造方法 |
| JP2936103B2 (ja) * | 1993-02-23 | 1999-08-23 | 旭テクノグラス株式会社 | 酸化アルミニウム薄膜 |
| JP3276446B2 (ja) * | 1993-04-09 | 2002-04-22 | 株式会社神戸製鋼所 | Ａｌ合金薄膜及びその製造方法並びにＡｌ合金薄膜形成用スパッタリングターゲット |
| JPH1011718A (ja) * | 1996-06-24 | 1998-01-16 | Hitachi Ltd | 磁気抵抗効果型ヘッド |
| JPH1062820A (ja) * | 1996-08-26 | 1998-03-06 | Citizen Watch Co Ltd | 液晶表示装置及びその製造方法 |
| JP3752861B2 (ja) * | 1998-09-25 | 2006-03-08 | 旭硝子株式会社 | 含フッ素樹脂フィルムおよび積層体 |
| KR100444603B1 (ko) * | 2001-12-22 | 2004-08-16 | 주식회사 하이닉스반도체 | 탄탈륨 펜타 옥사이드-알루미늄 옥사이드 유전체막 제조방법 및 이를 적용한 반도체 소자 |
| US20050112019A1 (en) * | 2003-10-30 | 2005-05-26 | Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.) | Aluminum-alloy reflection film for optical information-recording, optical information-recording medium, and aluminum-alloy sputtering target for formation of the aluminum-alloy reflection film for optical information-recording |
| CN101267019A (zh) * | 2008-04-28 | 2008-09-17 | 中国科学院长春应用化学研究所 | 三层复合膜绝缘栅的有机薄膜晶体管及其制备方法 |
| JP5552753B2 (ja) * | 2008-10-08 | 2014-07-16 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
| JP2010093172A (ja) * | 2008-10-10 | 2010-04-22 | Fujifilm Corp | 封止デバイス |
| EP2626443A1 (en) * | 2010-10-08 | 2013-08-14 | Kabushiki Kaisha Kobe Seiko Sho | Al-based alloy sputtering target and production method of same |
-
2012
- 2012-12-12 JP JP2012271727A patent/JP2013147738A/ja active Pending
- 2012-12-18 TW TW101148080A patent/TWI548762B/zh not_active IP Right Cessation
- 2012-12-21 CN CN201210562375.8A patent/CN103173718B/zh not_active Expired - Fee Related
- 2012-12-21 KR KR1020120150538A patent/KR101471254B1/ko active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201022176A (en) * | 2008-12-15 | 2010-06-16 | Idemitsu Kosan Co | Indium oxide sintered compact and sputtering target |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201331396A (zh) | 2013-08-01 |
| CN103173718A (zh) | 2013-06-26 |
| CN103173718B (zh) | 2015-09-30 |
| KR101471254B1 (ko) | 2014-12-09 |
| JP2013147738A (ja) | 2013-08-01 |
| KR20130079200A (ko) | 2013-07-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |