TWI546154B - 具繞射效應之光學模型至所量測光譜的配適 - Google Patents
具繞射效應之光學模型至所量測光譜的配適 Download PDFInfo
- Publication number
- TWI546154B TWI546154B TW102112532A TW102112532A TWI546154B TW I546154 B TWI546154 B TW I546154B TW 102112532 A TW102112532 A TW 102112532A TW 102112532 A TW102112532 A TW 102112532A TW I546154 B TWI546154 B TW I546154B
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- Taiwan
- Prior art keywords
- spectrum
- output spectrum
- computer program
- program product
- repeating structure
- Prior art date
Links
- 238000001228 spectrum Methods 0.000 title claims description 167
- 230000003287 optical effect Effects 0.000 title claims description 72
- 230000000694 effects Effects 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 96
- 238000005498 polishing Methods 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 46
- 238000000227 grinding Methods 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 26
- 238000004590 computer program Methods 0.000 claims description 22
- 238000012544 monitoring process Methods 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 15
- 238000011065 in-situ storage Methods 0.000 claims description 14
- 230000008033 biological extinction Effects 0.000 claims description 10
- 230000006978 adaptation Effects 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000012935 Averaging Methods 0.000 claims description 2
- 238000004611 spectroscopical analysis Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 80
- 230000006870 function Effects 0.000 description 27
- 238000005259 measurement Methods 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 9
- 238000004364 calculation method Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 230000003595 spectral effect Effects 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- 238000005070 sampling Methods 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 238000012886 linear function Methods 0.000 description 4
- 230000003252 repetitive effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 2
- 238000004422 calculation algorithm Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- WJMXTYZCTXTFJM-UHFFFAOYSA-N 1,1,1,2-tetraethoxydecane Chemical compound C(C)OC(C(OCC)(OCC)OCC)CCCCCCCC WJMXTYZCTXTFJM-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- VSQYNPJPULBZKU-UHFFFAOYSA-N mercury xenon Chemical compound [Xe].[Hg] VSQYNPJPULBZKU-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001373 regressive effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000002922 simulated annealing Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/456,035 US9011202B2 (en) | 2012-04-25 | 2012-04-25 | Fitting of optical model with diffraction effects to measured spectrum |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201343323A TW201343323A (zh) | 2013-11-01 |
| TWI546154B true TWI546154B (zh) | 2016-08-21 |
Family
ID=49477711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102112532A TWI546154B (zh) | 2012-04-25 | 2013-04-09 | 具繞射效應之光學模型至所量測光譜的配適 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9011202B2 (enExample) |
| JP (1) | JP6234438B2 (enExample) |
| KR (1) | KR101917344B1 (enExample) |
| TW (1) | TWI546154B (enExample) |
| WO (1) | WO2013162855A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101892914B1 (ko) * | 2012-03-08 | 2018-08-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 측정된 스펙트럼에 대한 광학 모델의 피팅 |
| US9011202B2 (en) * | 2012-04-25 | 2015-04-21 | Applied Materials, Inc. | Fitting of optical model with diffraction effects to measured spectrum |
| US9248544B2 (en) * | 2012-07-18 | 2016-02-02 | Applied Materials, Inc. | Endpoint detection during polishing using integrated differential intensity |
| US20140242880A1 (en) * | 2013-02-26 | 2014-08-28 | Applied Materials, Inc. | Optical model with polarization direction effects for comparison to measured spectrum |
| US20140242881A1 (en) * | 2013-02-27 | 2014-08-28 | Applied Materials, Inc. | Feed forward parameter values for use in theoretically generating spectra |
| JP5958627B1 (ja) * | 2015-09-08 | 2016-08-02 | 株式会社豊田中央研究所 | 摺動装置 |
| JP7197999B2 (ja) | 2018-05-11 | 2022-12-28 | キオクシア株式会社 | 研磨装置および研磨パッド |
| KR102808528B1 (ko) | 2018-09-24 | 2025-05-16 | 어플라이드 머티어리얼스, 인코포레이티드 | Cmp 프로세스 제어 알고리즘에 대한 입력으로서의 기계 시각 |
| JP2020181959A (ja) | 2019-04-26 | 2020-11-05 | 東京エレクトロン株式会社 | 学習方法、管理装置および管理プログラム |
| EP4301548A4 (en) * | 2021-03-03 | 2025-01-29 | Applied Materials, Inc. | IN-SITU MONITORING FOR MARKING TRAINING SPECTRA FOR A MACHINE LEARNING SYSTEM FOR SPECTROGRAPHIC MONITORING |
| US20250256371A1 (en) * | 2024-02-13 | 2025-08-14 | Applied Materials, Inc. | Endpoint control for inconsistent underlayer |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5653622A (en) * | 1995-07-25 | 1997-08-05 | Vlsi Technology, Inc. | Chemical mechanical polishing system and method for optimization and control of film removal uniformity |
| JP3109577B2 (ja) * | 1997-03-27 | 2000-11-20 | 日本電気株式会社 | 半導体ウェハ研磨終点検出装置 |
| US6489624B1 (en) | 1997-07-18 | 2002-12-03 | Nikon Corporation | Apparatus and methods for detecting thickness of a patterned layer |
| JPH1148134A (ja) * | 1997-08-11 | 1999-02-23 | Nikon Corp | 研磨終点検出方法、研磨終点検出装置及びこれを有する研磨装置 |
| US6271047B1 (en) | 1998-05-21 | 2001-08-07 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
| US6361646B1 (en) | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
| US6276987B1 (en) * | 1998-08-04 | 2001-08-21 | International Business Machines Corporation | Chemical mechanical polishing endpoint process control |
| US6159073A (en) * | 1998-11-02 | 2000-12-12 | Applied Materials, Inc. | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
| AU2001279126A1 (en) | 2000-07-31 | 2002-02-13 | Silicon Valley Group Inc | In-situ method and apparatus for end point detection in chemical mechanical polishing |
| JP3844973B2 (ja) * | 2001-03-16 | 2006-11-15 | 大日本スクリーン製造株式会社 | 基板の研磨終点検出 |
| JP3932836B2 (ja) * | 2001-07-27 | 2007-06-20 | 株式会社日立製作所 | 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法 |
| US6947135B2 (en) * | 2002-07-01 | 2005-09-20 | Therma-Wave, Inc. | Reduced multicubic database interpolation method for optical measurement of diffractive microstructures |
| JP4542324B2 (ja) * | 2002-10-17 | 2010-09-15 | 株式会社荏原製作所 | 研磨状態監視装置及びポリッシング装置 |
| JP4464642B2 (ja) * | 2003-09-10 | 2010-05-19 | 株式会社荏原製作所 | 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法 |
| US7394554B2 (en) | 2003-09-15 | 2008-07-01 | Timbre Technologies, Inc. | Selecting a hypothetical profile to use in optical metrology |
| US7264535B2 (en) * | 2004-04-23 | 2007-09-04 | Hitachi Global Storage Technologies Netherlands, B.V. | Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model |
| US7144297B2 (en) * | 2005-05-03 | 2006-12-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus to enable accurate wafer prediction |
| US7495781B2 (en) | 2006-07-10 | 2009-02-24 | Tokyo Electron Limited | Optimizing selected variables of an optical metrology model |
| US7522295B2 (en) | 2006-11-07 | 2009-04-21 | Tokyo Electron Limited | Consecutive measurement of structures formed on a semiconductor wafer using a polarized reflectometer |
| EP2088123A1 (en) * | 2006-11-10 | 2009-08-12 | Sumitomo Electric Industries, Ltd. | Si-O CONTAINING HYDROGENATED CARBON FILM, OPTICAL DEVICE INCLUDING THE SAME, AND METHOD FOR MANUFACTURING THE Si-O CONTAINING HYDROGENATED FILM AND THE OPTICAL DEVICE |
| JP5254668B2 (ja) * | 2008-06-03 | 2013-08-07 | 株式会社荏原製作所 | 研磨終点検出方法 |
| US20100120331A1 (en) * | 2008-11-07 | 2010-05-13 | Applied Materials, Inc. | Endpoint control of multiple-wafer chemical mechanical polishing |
| US8751033B2 (en) | 2008-11-14 | 2014-06-10 | Applied Materials, Inc. | Adaptive tracking spectrum features for endpoint detection |
| JP5728239B2 (ja) | 2010-03-02 | 2015-06-03 | 株式会社荏原製作所 | 研磨監視方法、研磨方法、研磨監視装置、および研磨装置 |
| WO2011139575A2 (en) * | 2010-05-05 | 2011-11-10 | Applied Materials, Inc. | Endpoint method using peak location of modified spectra |
| US8190285B2 (en) * | 2010-05-17 | 2012-05-29 | Applied Materials, Inc. | Feedback for polishing rate correction in chemical mechanical polishing |
| NL2006700A (en) * | 2010-06-04 | 2011-12-06 | Asml Netherlands Bv | Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus. |
| JP2014500613A (ja) | 2010-10-15 | 2014-01-09 | アプライド マテリアルズ インコーポレイテッド | 光学監視のためのスペクトルライブラリの構築 |
| US20120278028A1 (en) | 2011-04-28 | 2012-11-01 | Jeffrey Drue David | Generating model based spectra library for polishing |
| US9011202B2 (en) * | 2012-04-25 | 2015-04-21 | Applied Materials, Inc. | Fitting of optical model with diffraction effects to measured spectrum |
-
2012
- 2012-04-25 US US13/456,035 patent/US9011202B2/en active Active
-
2013
- 2013-04-05 KR KR1020147032927A patent/KR101917344B1/ko active Active
- 2013-04-05 JP JP2015508993A patent/JP6234438B2/ja active Active
- 2013-04-05 WO PCT/US2013/035510 patent/WO2013162855A1/en not_active Ceased
- 2013-04-09 TW TW102112532A patent/TWI546154B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6234438B2 (ja) | 2017-11-22 |
| KR101917344B1 (ko) | 2018-11-09 |
| US20130288570A1 (en) | 2013-10-31 |
| JP2015520508A (ja) | 2015-07-16 |
| KR20150005652A (ko) | 2015-01-14 |
| WO2013162855A1 (en) | 2013-10-31 |
| US9011202B2 (en) | 2015-04-21 |
| TW201343323A (zh) | 2013-11-01 |
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