TWI545676B - 毫秒退火（ｄｓａ）之邊緣保護 - Google Patents

毫秒退火（ｄｓａ）之邊緣保護 Download PDF

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Publication number
TWI545676B
TWI545676B TW103137232A TW103137232A TWI545676B TW I545676 B TWI545676 B TW I545676B TW 103137232 A TW103137232 A TW 103137232A TW 103137232 A TW103137232 A TW 103137232A TW I545676 B TWI545676 B TW I545676B
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TW
Taiwan
Prior art keywords
substrate
substrate support
energy
blocker
energy blocker
Prior art date
Application number
TW103137232A
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English (en)
Chinese (zh)
Other versions
TW201507050A (zh
Inventor
柯莫布萊克
敏特希羅伯特Ｃ
拉瑪格那克大衛Ｄｌ
雷奈亞歷山大Ｎ
梅爾艾伯希拉許Ｊ
尤都史凱約瑟夫
Original Assignee
應用材料股份有限公司
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Publication of TW201507050A publication Critical patent/TW201507050A/zh
Application granted granted Critical
Publication of TWI545676B publication Critical patent/TWI545676B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Recrystallisation Techniques (AREA)
TW103137232A 2008-02-15 2009-02-13 毫秒退火（ｄｓａ）之邊緣保護 TWI545676B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/032,475 US7754518B2 (en) 2008-02-15 2008-02-15 Millisecond annealing (DSA) edge protection

Publications (2)

Publication Number Publication Date
TW201507050A TW201507050A (zh) 2015-02-16
TWI545676B true TWI545676B (zh) 2016-08-11

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW103137232A TWI545676B (zh) 2008-02-15 2009-02-13 毫秒退火（ｄｓａ）之邊緣保護
TW098104686A TWI463589B (zh) 2008-02-15 2009-02-13 毫秒退火（ｄｓａ）之邊緣保護

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW098104686A TWI463589B (zh) 2008-02-15 2009-02-13 毫秒退火（ｄｓａ）之邊緣保護

Country Status (7)

Country Link
US (2) US7754518B2 (cg-RX-API-DMAC10.html)
EP (1) EP2248150A4 (cg-RX-API-DMAC10.html)
JP (1) JP5451643B2 (cg-RX-API-DMAC10.html)
KR (3) KR101850088B1 (cg-RX-API-DMAC10.html)
CN (2) CN101946302B (cg-RX-API-DMAC10.html)
TW (2) TWI545676B (cg-RX-API-DMAC10.html)
WO (1) WO2009102600A1 (cg-RX-API-DMAC10.html)

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Also Published As

Publication number Publication date
JP2011512674A (ja) 2011-04-21
US20090209112A1 (en) 2009-08-20
CN101946302A (zh) 2011-01-12
KR101608865B1 (ko) 2016-04-04
KR20160030321A (ko) 2016-03-16
JP5451643B2 (ja) 2014-03-26
KR20100123724A (ko) 2010-11-24
TW201507050A (zh) 2015-02-16
EP2248150A4 (en) 2012-03-07
US20100273334A1 (en) 2010-10-28
KR20170072362A (ko) 2017-06-26
US7754518B2 (en) 2010-07-13
EP2248150A1 (en) 2010-11-10
KR101850088B1 (ko) 2018-04-18
KR101749041B1 (ko) 2017-06-20
WO2009102600A1 (en) 2009-08-20
CN101946302B (zh) 2016-02-10
TW201001588A (en) 2010-01-01
US7923280B2 (en) 2011-04-12
CN105514001B (zh) 2018-03-09
TWI463589B (zh) 2014-12-01
CN105514001A (zh) 2016-04-20

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