TWI545662B - 使用雷射光密封與接觸基板的方法以及電子模組 - Google Patents

使用雷射光密封與接觸基板的方法以及電子模組 Download PDF

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Publication number
TWI545662B
TWI545662B TW100117037A TW100117037A TWI545662B TW I545662 B TWI545662 B TW I545662B TW 100117037 A TW100117037 A TW 100117037A TW 100117037 A TW100117037 A TW 100117037A TW I545662 B TWI545662 B TW I545662B
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insulating substrate
melting
substrate
conductive layer
region
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TW100117037A
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TW201201287A (en
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傑洛 肯賈斯帕
提納 艾柏拉
山田和夫
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可利雷斯股份有限公司
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    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/21—Bonding by welding
    • B23K26/24—Seam welding
    • B23K26/244—Overlap seam welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
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Description

使用雷射光密封與接觸基板的方法以及電子模組
本發明是有關於使用雷射來處理基板，且特別是有關於使用脈衝式雷射光來焊接含有電性接觸區的玻璃基板及/或半導體基板。基板可包括(例如)藍寶石、石英或矽。
歐洲專利EP 1369912揭露了一種使用雷射束來將倒裝晶片(flip chip)接合(bonding)到晶片載體(chip carrier)上的方法。此方法包括：使倒裝晶片的接觸區對準(aligning)晶片載體的接觸區；以及透過晶片或載體將雷射束透射(projecting)到已對準的接觸區，以使它們電性相接合。然而，接觸區的周邊卻仍暴露在外界空氣(氧氣)和潮濕中，這會對正在製造的元件造成不利影響。
美國專利US 2004/207314、US 2005/174042、US 2003/197827以及日本專利JP 2005/028891更揭露了多種採用雷射焊接(laser welding)來使半導體基板或玻璃基板的多個部件相接觸或相接合的方法。然而，這些方法中也沒有一種方法能夠產生既接觸良好又密封良好的結構。
本發明的目的是實現一種使用雷射光來電性接觸基板的改良的方法，此方法還能保護基板，使基板免遭粒子、氧氣以及潮濕的影響。
本發明的又一目的是提供一種具有電接頭(electrical contacts)的密封良好的電子模組。
上述目的是透過依照申請專利範圍獨立項的方法與電子模組來實現。
本發明是基於以下發現：將脈衝式雷射光掃過基板材料(通常是絕緣材料)與塗敷(applied)在此基板上的導電層的介面區(interface zones)，此雷射光可誘導(induce)基板材料和導電層熔融(fusing)。這些區域的實用地完全熔融(融化)均可被達成。
在一實施例中，本發明提供一種使第一絕緣基板(較佳的是玻璃基板)與至少一個第二絕緣基板(較佳的是玻璃基板或矽基板)熔融且電性接觸的方法，其中第一絕緣基板上具有至少一層第一導電層(即，接觸端)，至少一個第二絕緣基板上具有至少一層第二導電層。此方法包括：將第一基板與第二基板堆疊(stacking)在一起，而在其間之間形成介面區，此介面區包括：電性接觸區，在此電性接觸區中，至少一層第一導電層正對著且至少局部對準至少一層第二導電層；以及基板熔融區，此基板熔融區中有多個絕緣基板面對面地配置；使來自雷射源的多個連續的聚焦雷射脈衝透過多個基板之一而聚焦在這些基板的介面區上，此雷射光的脈衝持續時間(pulse duration)、脈衝頻率以及脈衝功率經選擇以使得基板材料和導電層局部熔化；以及使雷射源與基板以預定的速度和路線而相對移動，以形成結構改良區到介面區，此結構改良區與所述電性接觸區、所述基板熔融區重疊。
術語“絕緣基板”是指所有的非導電性基板，包括本質半導體(intrinsic semiconducting)基板，它在微電子學上常用作晶圓(wafers)。導電層通常是金屬層。
本發明具有顯著的優點。第一，由於基板的機械連接和電性連接是在同一工序中進行，所以此方法很簡單，既節省時間又節省費用。第二，由於材料直接熔融，所以可使焊縫完全密封。第三，相同電氣裝置內的其他基板或元件可使用相同的雷射照射方案來進行純機械或電性連接。第四，可形成高品質且無針孔(pinhole-free)的焊縫。
依照一實施例，基板主體的至少其中之一可透射具有所用波長的雷射。這使得該雷射能夠穿過此基板且聚焦在介面上，其中單位體積的強度足以對基板或其接觸區進行加熱和焊接。
本發明的一個目的是生產雷射誘導焊接和電性接觸的基板，其中所形成的焊縫具有高品質，也就是說，焊縫基本上無微裂縫(microcracks)。詳細地說，使用皮秒級(picosecond-scale)雷射脈衝可達到這一目的，當皮秒級雷射脈衝在時間和空間上都以足夠的頻率前往基板時，除了在基板上誘導非線性吸收(nonlinear absorption)外，還能誘導相當大的線性吸收(linear absorption)效應。如此一來，後續脈衝前往基板，使得此脈衝與先前脈衝的光斑(spot)明顯重疊，此光斑仍然足夠熱，基板透過線性吸收來額外吸收雷射能量。除了吸收增強外，較高的脈衝重複率還會降低基板材料的微裂易感性(susceptibility)。這 是因為前一個脈衝能使材料的硬度減小，當後一個脈衝到來時，衝擊波會減弱。可使用一種裝置，其包括：脈衝式雷射源，用來發射具有預定的脈寬、脈衝頻率和焦斑(focal spot)直徑的雷射脈衝；用來固持基板的裝置，使得雷射光能夠從脈衝式雷射源透過多個基板之一而被引導至這些基板的介面區；以及使這些基板相對於脈衝式雷射源以預定的速度且沿著預定的路線而移動的裝置。
可選擇的是，例如，可利用反射鏡光學器件來引導雷射束，以防止雷射源及/或基板移動。
經配置，雷射源與基板之間的有效光程使得雷射脈衝能夠聚焦在基板的介面區上。這意味著，兩個基板都能從每個單獨脈衝中吸收足夠的能量使基板材料局部熔化。
經發現，依照本發明的方法能夠生產在已處理的材料中僅有少量微裂縫的處理基板，故而能夠生產抗彎強度(bending strength)較高的處理元件。
在本文中，術語“基板”是指在適當的脈衝式雷射照射下會發生結構變化(熔化和再凝固(re-solidification))的廣義上的任何目標材料或材料組合。基板可實質上是均質(homogeneous)的，也可包括多個由不同材料來形成的區域或層。這些區域或層起初可連接在一起。可針對一個單獨的層或區域來實施處理，也可針對兩個或兩個以上的層或區域的介面來實施處理，這取決於想要的效果。
本發明的更進一步的實施例及優點配合所附圖式作詳細說明如下。
圖1繪示為實施本方法的一種方式。提供第一絕緣基板28A(例如，玻璃基板)和第二絕緣基板28B(例如，半導體晶片)，其中第一絕緣基板28A包含第一電性接觸端29A，第二絕緣基板28B包含第二電性接觸端29B。第一絕緣基板28A和第二絕緣基板28B相互疊加而配置成堆疊(stack)28，使得接觸端29A、29B在其介面區相互對準。然後，使用雷射源20透過光學器件22來產生脈衝式雷射束24，此脈衝式雷射束24透過基板之一而聚焦在介面區上，以便在介面區產生多個連續且重疊的雷射誘導光斑。如圖2所示，此過程完成後，堆疊28變成了熔融的堆疊28’，其中第一絕緣基板28A與第二絕緣基板28B在區域27處完全熔融在一起，且不再有接觸端29A、29B。在接觸端29A、29B所在的區域，接觸端已完全熔融在一起，以便在基板之間提供電性連接區29。
圖3a繪示為一種微晶片，其包括基板32，此基板32包括電子功能部件33和多個接觸端34。圖3b繪示為基板31，其包括接觸端36，這些接觸端36是用來在堆疊時與微晶片的接觸端34相匹配。圖3c繪示為堆疊組態下的微晶片和基板以及使用本發明之方法而在各構件之間形成的焊線37。此焊線與面對面而配置的接觸端36、34重疊，也與這些接觸端外面的區域重疊，且在此情形下焊線形成 閉環(closed loop)。如此一來，可對微晶片的核心進行密封保護，以防止其受到外界潮濕和在基板之間擴散的氧氣的影響。
圖3d繪示為一種包括基板30的多功能元件，此基板30上利用本方法附著了多個功能性元件。值得注意的是，並非所有的元件都必須含有兩種類型的熔融區(直接基板熔融與電性接觸區)。例如，對潮濕敏感的感測器可使用本方法來密封在較大的基板上並與此基板接觸，而顯示器構件則只需密封在較大的基板上而不必與此基板接觸(這是採用其他方法來實施)。若無需密封，則只需實施電性接觸。本發明的一個優點是，上述這些情形可採用相同的雷射照射方案，因此製造這種多功能元件變得簡單。
詳細地說，本發明尤其適合用來焊接玻璃基板及/或半導體基板(諸如矽)、技術玻璃(諸如石英)、熔融石英、硼矽酸鹽、石灰玻璃、實施過溫度膨脹係數調諧的玻璃、藍寶石、陶瓷(諸如氧化鋯)、LiTaO等以及上述材料的組合。例如，基板可含有用鉻、銅、金、銀、鉬或氧化銦錫(ITO)來形成的導電區。
可使用本方法來進行焊接的特別較佳的材料組合(基板1/導電材料1-導電材料2/基板2)是：玻璃/鉻-鉻/玻璃
玻璃/銅-銅/玻璃
玻璃/銅-銅/矽
玻璃/金-金/玻璃
玻璃/金-金/矽
玻璃/銀-銀/矽
玻璃/鉬-鉬/玻璃
玻璃/ITO-ITO/玻璃
雷射光通常能穿透玻璃基板。能夠被雷射脈衝穿透的基板的厚度通常為100μm~500μm。下基板的厚度無關緊要，但是能夠進行成功處理的厚度至少為300μm~1000μm。基板上的鍍金屬(metallizations)的厚度通常為0.1μm~5μm，特別是0.1μm~3μm。
依照一實施例，20ps~100ps的脈寬以及脈衝頻率和移動速度經調節以使得各脈衝明顯重疊，相鄰脈衝之間的距離小於焦斑直徑的1/5。較佳的是，脈衝頻率至少為1MHz。經發現，在此參數範圍內，雷射功率的非線性吸收和線性吸收會得到最有效的利用，因而其總吸收率高於習知的方法。因此，由於先前脈衝的緣故，當後續脈衝到來時，目標光斑仍然很熱，所以此材料局部不能透射所用的波長，但起初具有很高的吸收率，即自由電荷載子(free charge carriers)數量很多。換言之，由於先前脈衝的緣故，導帶(conduction band)中的電子數量很多，且此材料看上去很像是對雷射輻射吸收率高的金屬靶材。在典型的應用場合，焦斑直徑介於1μm~10μm的範圍內，致使脈衝之間的最大典型距離介於200nm~2μm的範圍內。在早期的PCT申請案第PCT/FI2009/050474號中對基板中發生的物理現象進行了詳細的描述。
所述的處理方案的另一個優點是雷射光的低峰值功率(通常小於1012W/cm2)可得到利用，平均功率仍高於習知方法的平均功率或至少與習知方法的平均功率相等。如此一來，每個單獨脈衝所引起的雷射誘導衝擊波後面都會因後續脈衝前往此脈衝的碰撞區附近而產生很強的熱波(thermal wave)。其好處在於，當附近的熔化效應較強時，單獨脈衝所造成的局部裂縫會自動修復。因此，依照本發明來進行處理而形成的結構改良區質地均勻，且具有高品質。通常，所用的峰值功率為1010W/cm2~1012W/cm2，特別是1010W/cm2~5×1011W/cm2。這明顯小於飛秒脈衝處理(femtosecond pulse processing)法或多光子吸收處理(multiphoton absorption processing)法所需的峰值功率，因此雷射誘導缺陷的數量大大減少。
依照一實施例，脈衝頻率增大或移動速度減小，使得相鄰的結構改良光斑之間的距離小於所述焦斑的直徑的1/10，較佳的是小於所述焦斑的直徑的1/20。這進一步增強了基板中發生的線性吸收效應，且有助於得到更均質的處理線。較佳的是，處理頻率至少是4MHz，也可高達20MHz甚至更高。
與無鍍金屬的區域相比，在金屬化(metallized)的區域中，金屬箔中的電子會導致線性吸收效應增強。那裡形成電漿雲(plasma cloud)，電漿雲的電子不僅會增強金屬化的區域的光吸收，也會增強該區域附近的玻璃基板或半導體基板的光吸收。
通常，相鄰脈衝的重疊百分比的特點是公式(1-(處理速度×(脈衝之間的時間)/焦斑直徑))。圖5a與圖5b繪示為針對三種處理速度且光斑直徑分別為2μm和6μm時利用此公式來計算出的擊中基板各部位的脈衝數量相對於處理頻率的函數關係。
以上揭露的較佳的脈衝參數範圍可用來處理正常狀態下能夠完全或局部透射所用波長的基板。這是因為實際上材料中的雜質或晶格缺陷(lattice defects)能夠啟動光電離(photoionization)制程，進而啟動碰撞電離(impact ionization)制程。值得注意的是，在利用短脈衝(特別是飛秒級脈衝)來處理基板的過程中起著重要作用的所謂的多光子吸收並不會大量地發生，它甚至是不必要的。
依照一較佳實施例，所用的波長介於近紅外線範圍內，即0.75μm~1.4μm。經證實，此範圍不僅適用於矽的處理，而且也適用於諸如藍寶石和石英等高帶隙(band gap)材料，這種高帶隙材料至少很難透過任何工業途徑用習知的低頻及/或飛秒級處理方法來進行處理。
依照一實施例，使用非偏振(nonpolarized)雷射光。這導致基板中的電磁場方向為任意方向，且使得此方法更不會受到基板的晶格參數的影響。換言之，經發現，非偏振光對更多種類的基板有效。
圖6繪示為依照本發明對玻璃基板進行處理的微結構的橫剖面圖。雷射從上方前往基板，且所示特徵的漸縮端(tapered end)(參見箭頭)處已經開始了熔化制程。可 以看出的是，脈寬為20ps或更大的脈衝在起始點處呈圓形，這不同於短脈衝(特別是亞皮秒(sub-ps)脈衝)，短脈衝的起始點是尖的，而且起始點附近的裂化機率高。還可以看出的是，在玻璃中形成的特徵的直徑很寬，以致於功率密度不足以進行多光子吸收，且該特徵越接近上面部分線性吸收效應越強。
圖7繪示為根據本發明而形成的介面的橫剖面圖，此介面包括：基板熔融區72，在此基板熔融區72，基板完全熔融在一起；以及電性連接區71A、71B，位於基板熔融區的兩側，在此電性連接區71A、71B，導電金屬層(不太清晰)完全熔融在一起。可以看出的是，在基板熔融區72，結構改良朝著每個基板延伸了幾微米，所以熔融很徹底(密封)。在此區域中，基板之間的連接可稱為“擴散式深度接合”(diffused deep bonding)。另一方面，在電性連接區71A、71B，含有金屬的層導致局部吸收雷射能量較多，這使得結構改良的深度較小，即“表面接合”(surface bonding)。
依照一較佳實施例，所用的雷射源是光纖雷射源。光纖雷射的優點在於它們能夠產生兆赫(megahertz)頻率範圍內的光，如上所述，經發現，就處理速度和品質而言，兆赫頻率範圍內的光是最有利的。本文中的光纖雷射是指主動增益介質(active gain medium)為摻雜光纖的雷射。此摻雜可利用諸如鉺、鐿、釹、鏑、鐠以及銩等稀土元素來實施。
本發明的優點在於，因為不採用單獨的接觸步驟，所以焊接時處理速度很高。另外，焊縫很密封，且具有高品質。
本發明可用來焊接矽晶體晶圓以及製造積體電路和其他微型元件所用的其他半導體材料。這類晶圓包含藉由諸如摻雜(doping)、離子植入(ion implantation)、蝕刻(etching)、沈積(deposition)以及微影圖案化(photolithographic patterning)等任何習知的微加工制程來形成在晶圓中及/或晶圓上的微電子元件和用來傳導電子電流及/或電位至微電子元件的電子接線端。
用來(例如)製造顯示面板(例如，液晶顯示器(liquid crystal display,LCD)面板和(有機)發光二極體((organic)light-emitting diode,(O)LED)面板)的很薄的晶圓(例如，<200μm，特別是<100μm)具有特別的優點。然而，原則上本發明可用來製造任何厚度的晶圓。
依照一實施例，本發明是用來焊接具有介面區的至少兩個疊置層，此方法包括：使雷射脈衝聚焦在所述介面區上，以便在介面區實現局部熔化；以及透過再凝固來將各層焊接在一起。
圖1示意性地繪示了此焊接應用。在此方法中，雷射源20和光學器件22是用來產生雷射束24，且使此雷射束24聚焦在基板28的兩個單獨第一絕緣基板28A與第二絕緣基板28B之間的介面上。依照上述原理，在移動基板後，多個重疊脈衝便會形成使第一絕緣基板28A與第二絕緣基 板28B連接起來的焊縫26。
依照一實例，基板包括兩個疊置的玻璃面板，這兩個疊置的玻璃面板在至少其中之一的邊緣區透過連續的接縫而焊接在一起。因此，例如顯示面板或感光面板可使用本方法來製造。圖4a與圖4b繪示為製造有機發光二極體(organic liquid-emitting diode,OLED)顯示面板的一實例。面板48包括：基底層48A，其包括含有單獨發光單元陣列(array)的主動層49；以及前玻璃層48B。起初，基底層48A與前玻璃層48B相互疊置在一起，使得需要密封保護的主動層49留在兩者之間。然後，使用本發明在整個主動層周圍形成焊縫46。較佳的是，此焊縫是無破損的(連續的)。如此一來，可以為主動層形成一個有效的屏障以阻擋灰塵和潮濕，同時將此面板的各層有效地附著在一起，而無需任何額外的元件(諸如黏合劑)。由於頻繁發送脈衝以及玻璃層完全熔化和再凝固，所以焊縫的不可滲透性很強。較佳的是，如上所述，基底層48A與前玻璃層48B可同時實施電性接觸。
圖4c與圖4d繪示為實施基板焊接的兩種備選方法的詳圖。在圖4c所示之過程中，基底層48A與前玻璃層48B在介面區處相互分隔開，且在兩者之間直接形成焊縫46A。在圖4d所示之過程中，基底層48A與前玻璃層48B之間提供額外的橋接層(bridging layer)47。此橋接層47使玻璃之間的間隙減小，且確保各層平等競爭。如此一來，橋接層與前玻璃層48B之間形成焊縫46B。橋接層47可 以是金屬層。也可以在兩個基板上都形成橋接金屬層，如此一來，焊接包括將這些金屬層熔融在一起。
除了製造顯示面板外，在既需要密封又需要電性接觸的應用場合，也可使用此焊接方法來熔融任何其他可用雷射來焊接的元件和基板。例如，在將微型感測器及其他微型元件接合在基板上時，在晶圓級封裝(packaging)、溫度敏感性元件封裝、光學元件的整合(integration)以及微型流動(microfluidistic)元件的整合等應用場合中，都會有這種需求。
上述所揭露的實施例、實例及所附圖式揭露是用以作為闡述的目的，然其並非用以限定本發明。本發明之保護範圍當視後附之申請專利範圍所界定者為準，後附之申請專利範圍將闡述其全面性的廣度，且包括等同變化在內。
20‧‧‧雷射源
22‧‧‧光學器件
24‧‧‧雷射束
26、46、46A、46B‧‧‧焊縫
27‧‧‧區域
28、28’‧‧‧堆疊
28A、28B、30、31、32‧‧‧基板
29、71A、71B‧‧‧電性連接區
29A、29B、34、36‧‧‧接觸端
33‧‧‧電子功能部件
37‧‧‧焊線
47‧‧‧橋接層
48‧‧‧面板
48A‧‧‧基底層
48B‧‧‧前玻璃層
49‧‧‧主動層
72‧‧‧基板熔融區
圖1繪示為依照本發明之一實施例的焊接過程的側視圖。
圖2繪示為按照圖1所示之過程而形成的焊接產品的側視圖。
圖3a~圖3c繪示為依照本發明的a)微型電路、b)玻璃基板以及包括熔融並電性連接的元件a)和元件b)的構件的c)電子模組的俯視圖和側視圖。
圖3d繪示為使用本發明來製造的多功能電子模組的俯視圖。
圖4a~圖4d繪示為依照本發明之一實施例的一種(有機)發光二極體顯示面板的焊接。
圖5a與圖5b繪示為針對兩種不同的焦斑直徑，各部位的雷射脈衝相對於頻率的函數關係圖。
圖6繪示為依照本發明來對玻璃基板進行處理的微型結構的橫剖面圖。
圖7繪示為根據本發明而形成的介面的橫剖面圖。
20‧‧‧雷射源
22‧‧‧光學器件
24‧‧‧雷射束
26‧‧‧焊縫
28‧‧‧堆疊
28A、28B‧‧‧基板
29A、29B‧‧‧電性接觸端

Claims (14)

  1. 一種使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中所述第一絕緣基板(28A)上具有至少一層第一導電層(29A)，所述至少一個第二絕緣基板(28B)上具有至少一層第二導電層(29B)，所述方法包括：將所述第一絕緣基板(28A)與所述第二絕緣基板(28B)堆疊在一起，而在其間之間形成介面區，所述介面區包括：電性接觸區，在所述電性接觸區，所述至少一層第一導電層(29A)正對著且至少局部對準所述至少一層第二導電層(29B)；以及基板熔融區，在所述基板熔融區，所述第一絕緣基板(28A)與所述第二絕緣基板(28B)直接面對面地配置；使來自雷射源(20)的多個連續的聚焦雷射脈衝透過所述第一絕緣基板(28A)與所述第二絕緣基板(28B)之一而聚焦在所述第一絕緣基板(28A)與所述第二絕緣基板(28B)的所述介面區上，所述聚焦雷射脈衝的脈衝持續時間、脈衝頻率以及脈衝功率經選擇以使得所述第一絕緣基板(28A)與所述第二絕緣基板(28B)的材料和所述第一導電層(29A)與所述第二導電層(29B)局部熔化；以及使所述雷射源(20)和所述第一絕緣基板(28A)與所述第二絕緣基板(28B)以預定的速度和路線而相對移動，以形成結構改良區到所述介面區，所述結構改良區與所述 電性接觸區、所述基板熔融區重疊，其中所述脈衝持續時間為20ps~100ps，所述脈衝頻率為至少1MHz，且所述聚焦雷射脈衝的移動速度經調節以使得相鄰的脈衝相互重疊。
  2. 如申請專利範圍第1項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中所述結構改良區包括連續且密封的焊縫。
  3. 如申請專利範圍第1項或第2項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中所述聚焦雷射脈衝的路線形成閉環。
  4. 如申請專利範圍第3項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中所述閉環環繞著所述第一絕緣基板(28A)與所述第二絕緣基板(28B)之一所包含的對潮濕或氧氣敏感的構件而形成。
  5. 如申請專利範圍第1項或第2項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中所述第一絕緣基板(28A)與所述第二絕緣基板(28B)的至少其中之一包括含有多個像所述第一導電層(29A)與所述第二導電層(29B)一樣的接觸端的微晶片或顯示面板。
  6. 如申請專利範圍第1項或第2項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中所述第一絕緣基板(28A)與所述第二絕緣 基板(28B)的至少其中之一包括玻璃面板。
  7. 如申請專利範圍第6項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，包括將所述聚焦雷射脈衝透過所述玻璃面板而聚焦在所述介面區上。
  8. 如申請專利範圍第1項或第2項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中所述第一絕緣基板(28A)與所述第二絕緣基板(28B)的至少其中之一包括矽微晶片，所述第一導電層(29A)或所述第二導電層(29B)構成所述矽微晶片的接觸端。
  9. 如申請專利範圍第1項或第2項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中所述第一絕緣基板(28A)與所述第二絕緣基板(28B)在所述基板熔融區局部完全熔融在一起而形成所述結構改良區，且所述第一導電層(29A)與所述第二導電層(29B)在所述電性接觸區局部完全熔融在一起而形成所述結構改良區。
  10. 如申請專利範圍第1項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中所述脈衝頻率為至少4MHz。
  11. 如申請專利範圍第1項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中相鄰脈衝之間的距離小於所述聚焦雷射脈衝的焦斑直 徑的1/5。
  12. 如申請專利範圍第11項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中相鄰脈衝之間的距離小於所述聚焦雷射脈衝的焦斑直徑的1/10。
  13. 如申請專利範圍第12項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中相鄰脈衝之間的距離小於所述聚焦雷射脈衝的焦斑直徑的1/20。
  14. 如申請專利範圍第1項或第2項所述之使第一絕緣基板(28A)與至少一個第二絕緣基板(28B)熔融且電性接觸的方法，其中所述第一導電層(29A)與所述第二導電層(29B)的厚度小於1μm。
TW100117037A 2010-05-18 2011-05-16 使用雷射光密封與接觸基板的方法以及電子模組 TWI545662B (zh)

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