TWI544850B - Manufacturing method of circuit structure embedded with heat-dissipation block - Google Patents

Description

Circuit structure for embedded heat sink block

The present invention relates to a method of fabricating a wiring structure, and more particularly to a method of fabricating a wiring structure for a buried heat sink.

In recent years, in order to increase the application of printed circuit boards (PCBs), many techniques have been made to fabricate printed circuit boards into a multi-layered circuit structure to increase the space for wiring layout therein. The multi-layer circuit structure is formed by repeatedly stacking and bonding a layered structure composed of a copper foil and a prepreg (pp) to a core board to increase the multilayer wiring structure. The internal wiring space is filled with a conductive material in the blind holes of each build-up structure to conduct the layers by an electroplating process. In addition, many different types of components, such as wafers, connectors, optoelectronic components, or heat dissipating components, can also be placed in the wiring structure as needed to increase the use of the wiring structure.

For example, in the case of arranging electronic components (for example, a wafer) in a line structure, since the electronic components generate heat during operation, the circuit structure is usually additionally configured. A heat-dissipation block transfers the thermal energy of the electronic components out of the line structure. In addition, in order to make the line structure have better heat dissipation efficiency, the line structure may be further configured with a heat sink to assist in heat dissipation. In the manufacturing method of the conventional buried heat sink circuit structure, the heat dissipation block is usually embedded in the through hole of the through-line structure after the build-up structure is pressed against the core plate to form a complete line structure. Thus, the size of the heat sink block is large, resulting in an increase in the required manufacturing cost and a long heat dissipation path. In addition, components such as electronic components and heat sinks are usually disposed directly on the outer surface of the wiring structure and connected to the heat dissipation block, so that the assembly thickness of the wiring structure after assembling the above components becomes thick, which is disadvantageous for the thinning of the wiring structure.

The invention provides a method for manufacturing a line structure of a buried heat dissipation block, which can reduce the manufacturing cost of the line structure, shorten the heat dissipation path of the line structure, and reduce the assembly thickness of the line structure.

The method for fabricating the line structure of the embedded heat sink block of the present invention comprises the following steps: providing a core board, wherein the core board comprises a first dielectric layer and two first conductive layers, and the two first conductive layers are respectively located at the first The opposite sides of the dielectric layer. A consistent hole is formed through the core plate. A heat sink block is disposed in the through hole. Two inner layers are formed on opposite sides of the core board. And bonding at least one build-up structure to the core board, wherein the build-up structure comprises a second dielectric layer and a second conductive layer, and the second dielectric layer is between the second conductive layer and the core board. A recess is formed in a predetermined area of the build-up structure, wherein the recess communicates with the corresponding inner layer line and corresponds to the heat sink block.

The method for fabricating the line structure of the embedded heat sink block of the present invention comprises the following steps: providing a core board, wherein the core board comprises a first dielectric layer and two first conductive layers, and the two first conductive layers are respectively located at the first The opposite sides of the dielectric layer. Two inner layers are formed on opposite sides of the core board. And bonding at least one build-up structure to the core board, wherein the build-up structure comprises a second dielectric layer and a second conductive layer, and the second dielectric layer is between the second conductive layer and the core board. A recess is formed in a predetermined area of the buildup structure, and the recess is communicated to the corresponding inner layer line. A consistent hole is formed through the core plate. A heat sink block is disposed in the through hole, and the groove corresponds to the heat sink block.

In an embodiment of the invention, the size of the groove is larger than the size of the through hole.

In an embodiment of the present invention, the method for fabricating the line structure of the buried heat sink further includes the following steps: disposing a release film on the core board before the step of pressing the build-up structure on the core board, And the release film corresponds to a predetermined region of the buildup structure. In the step of forming the groove on the predetermined region of the buildup structure, the predetermined region of the buildup structure and the release film are removed to form a groove on the buildup structure.

In an embodiment of the invention, the heat sink block has a size smaller than a size of the through hole.

In an embodiment of the invention, the method for fabricating the buried heat sink circuit structure further includes the steps of: arranging a wafer in the recess, and electrically connecting the wafer to the corresponding inner layer line, or configuring a heat dissipation The device is inside the groove, and the heat sink is connected to the heat sink.

Based on the above, the present invention provides a system for constructing a line structure of a buried heat sink block. In the method, the heat dissipation block is disposed in the through hole of the core plate, and the groove is disposed on the build-up structure pressed on the core plate, and the groove is connected to the core plate and corresponds to the heat dissipation block. In this way, compared with the conventional manufacturing method in which the heat dissipation block is buried in the entire circuit structure, the manufacturing method of the buried heat dissipation block circuit structure of the present invention can reduce the manufacturing cost of the circuit structure, and can shorten the heat dissipation path of the circuit structure. And can reduce the assembly thickness of the line structure used when assembling other components.

The above described features and advantages of the invention will be apparent from the following description.

100, 100a‧‧‧ line structure

110‧‧‧ core board

112‧‧‧First dielectric layer

114a, 114b‧‧‧ first conductive layer

116‧‧‧through holes

118a, 118b‧‧‧ conductive materials

120‧‧‧heat block

130a, 130b‧‧‧ inner line

140a, 140b‧‧‧ layered structure

142a, 142b‧‧‧ second dielectric layer

144a, 144b‧‧‧ second conductive layer

146a, 146b‧‧‧ grooves

148a, 148b‧‧‧Predetermined area

150‧‧‧ wafer

160‧‧‧ radiator

W1, W2, W3‧‧‧ width

1A to 1H are schematic views showing the fabrication of a wiring structure of a buried heat sink according to an embodiment of the present invention.

2 is a schematic view of the wiring structure of the buried heat sink of FIG. 1H after assembling other components.

3A to 3G are schematic views showing the fabrication of a wiring structure of a buried heat sink according to another embodiment of the present invention.

1A to 1H are schematic views showing the fabrication of a wiring structure of a buried heat sink according to an embodiment of the present invention. Referring to FIG. 1A to FIG. 1H, in the embodiment, the manufacturing method of the buried heat sink block structure 100 (shown in FIG. 1H) includes the following steps: In step S110, the core board 110 is provided. In step S120, a through hole 116 is formed through the core plate 110. In step S130, the heat slug 120 is disposed in the through hole 116. In step S140, two inner layer lines 130a and 130b are formed on opposite sides of the core board 110. In step S150, the build-up structures 140a and 140b are pressed onto the core board 110. In step S160, grooves 146a and 146b are formed on predetermined regions 148a and 148b of build-up structures 140a and 140b, wherein grooves 146a and 146b are in communication with corresponding inner layer lines 130a and 130b and correspond to heat sink block 120. The above steps will be described in order with the text in conjunction with FIGS. 1A to 1H.

First, referring to FIG. 1A, in step S110, the core board 110 is provided. Specifically, in the embodiment, the core board 110 includes a first dielectric layer 112 and two first conductive layers 114a and 114b, and the two first conductive layers 114a and 114b are respectively located on the first dielectric layer 112. On both sides. The material of the first dielectric layer 112 is, for example, a prepreg (pp) or other suitable dielectric material, and the material of the first conductive layers 114a and 114b is, for example, a copper foil or other suitable conductive material. . Therefore, the core board 110 may be a copper clad laminate (CCL) or other substrate having the above composition. However, the present invention does not limit the kind of the core board 110 and the material and formation manner of the first dielectric layer 112 and the first conductive layers 114a and 114b, which can be adjusted according to requirements.

Next, referring to FIG. 1B, in step S120, a through hole 116 is formed through the core plate 110. Specifically, in the embodiment, the through hole 116 is formed on the core plate 110 and penetrates the core plate 110. The step of forming the through hole 116 may be a mechanical drill process, a laser drill process or the like. The process used does not limit the manner in which the through holes 116 are formed.

Next, referring to FIG. 1C , in step S130 , the heat dissipation block 120 is disposed in the through hole 116 . Specifically, in the present embodiment, the material of the heat dissipation block 120 is metal, and preferably a metal having good heat dissipation property, for example, copper, but the material of the heat dissipation block 120 is not limited by the present invention. Further, in the present embodiment, the size of the heat dissipation block 120 is smaller than the size of the through hole 116. Furthermore, the size of the heat sink block 120 is slightly smaller than the size of the through hole 116, and the size ratio thereof is, for example, between 0.8 and 1, but the actual size thereof can be adjusted according to requirements. Accordingly, the heat dissipation block 120 can be smoothly filled into the through hole 116, and the heat dissipation block 120 can be positioned in the through hole 116 by contacting the inner surface of the through hole 116. Accordingly, in this embodiment, the heat dissipation block 120 can be fixed in the through hole 116 without using an additional adhesive layer.

Next, referring to FIG. 1D, after the step of disposing the heat dissipation block 120 in the through hole 116 (step S130), and before the step of forming the two inner layer lines 130a and 130b on opposite sides of the core board 110 (step S140), Conductive materials 118a and 118b are first disposed on first conductive layers 114a and 114b, respectively. Specifically, in the present embodiment, the conductive materials 118a and 118b are, for example, copper or other suitable conductive materials, and the conductive materials 118a and 118b are formed on the first conductive layer 114a through an electroplating process or other suitable processes. On the 114b, and covering the heat sink block 120. Furthermore, the core board 110 may be configured with conductive holes not shown, and the conductive materials 118a and 118b are filled in the conductive holes to be electrically connected to each other. In this way, the two first conductive layers 114a and 114b respectively located on opposite sides of the first dielectric layer 112 can be electrically connected to each other through the conductive materials 118a and 118b and the conductive holes. However, the invention is not limited The materials, formation methods and configurations of the conductive materials 118a and 118b can be adjusted according to requirements.

Next, referring to FIG. 1E, in step S140, two inner layer lines 130a and 130b are formed on opposite sides of the core board 110. Specifically, in this embodiment, the first conductive layer 114a of the core board 110 and the conductive material 118a disposed thereon may be patterned according to a required line layout to form an inner layer line 130a, wherein the patterning The step of a conductive layer 114a and the conductive material 118a is, for example, an etching process or other suitable process, such that the inner layer line 130a has conductive patterns and wires connected to each other. Similarly, the first conductive layer 114b of the core board 110 and the conductive material 118b disposed thereon may be patterned in accordance with a desired line layout to form an inner layer line 130b having conductive patterns and wires connected to each other. In addition, since the heat dissipation block 120 of the present embodiment uses metal, the heat dissipation block 120 has electrical conductivity in addition to good heat dissipation. Accordingly, the inner layer lines 130a and 130b may be electrically connected to each other by the heat dissipation block 120, or may be electrically connected to each other by the conductive materials 118a and 118b filled in the conductive holes.

In addition, the circuit structure 100 of the buried heat dissipating block 120 of the present embodiment is formed by first forming the through hole 116 (step S120), and arranging the heat dissipating block 120 in the through hole 116 (step S130), and then forming two inner portions. The layer lines 130a and 130b (step S140). However, in other embodiments not shown, the line structure 100 of the buried heat sink 120 may be formed by first forming a through hole 116 (step S120) and forming two inner layer lines 130a and 130b (step S140). Then, the heat sink block 120 is disposed in the through hole 116 (step S130). Or, the line structure of the buried heat sink 120 The manufacturing method of 100 may be: first forming two inner layer lines 130a and 130b (step S140), and forming a through hole 116 (step S120), and then disposing the heat dissipation block 120 in the through hole 116 (step S130). In other words, the present invention does not limit whether the through holes 116 are formed first (step S120) or the two inner layer lines 130a and 130b are formed first (step S140), which can be adjusted as needed. However, as in this embodiment, the through holes 116 are formed first and the heat dissipation block 120 is disposed, and then the two inner layer lines 130a and 130b are formed, so that the inner layer lines 130a and 130b are prevented from being damaged during the arrangement of the through holes 116 and the heat dissipation block 120.

Next, referring to FIG. 1F, in step S150, the build-up structures 140a and 140b are pressed onto the core board 110. Specifically, in this embodiment, the number of the build-up structures 140a and 140b is exemplified by two, and the build-up structures 140a and 140b are respectively disposed on opposite sides of the core board 110, but the present invention does not limit the increase. The number of layer structures 140a and 140b can be adjusted as needed. The build-up structure 140a includes a second dielectric layer 142a and a second conductive layer 144a, wherein the second dielectric layer 142a is located between the second conductive layer 144a and the core board 110 and covers the inner layer line 130a. Similarly, the build-up structure 140b includes a second dielectric layer 142b and a second conductive layer 144b, wherein the second dielectric layer 142b is located between the second conductive layer 144b and the core board 110 and covers the inner layer line 130b. Furthermore, the material of the second dielectric layers 142a and 142b of the embodiment is, for example, a pre-cured film or other suitable dielectric material, and the material of the second conductive layers 144a and 144b is, for example, copper foil or other suitable conductive material. However, the present invention is not limited to the above embodiment.

Finally, referring to FIG. 1G and FIG. 1H, in step S160, grooves 146a and 146b are formed on predetermined regions 148a and 148b of the build-up structures 140a and 140b, The grooves 146a and 146b are in communication with the corresponding inner layer lines 130a and 130b and correspond to the heat dissipation block 120. Specifically, in the present embodiment, the grooves 146a, 146b extend through the corresponding build-up structures 140a, 140b to communicate to the corresponding inner layer lines 130a and 130b. Wherein, each of the build-up structures 140a, 140b has a second dielectric layer 142a, 142b and a second conductive layer 144a, 144b, and the second dielectric layer 142a, 142b and the second conductive layer 144a, 144b are different in material, Therefore, each of the grooves 146a, 146b can be formed on the corresponding build-up structure 140a, 140b by two processes. First, as shown in FIG. 1G, the portion of the second conductive layer 144a corresponding to the predetermined region 148a is removed, and the portion of the second conductive layer 144b corresponding to the predetermined region 148b is removed. The predetermined regions 148a and 148b can be considered to be regions on the build-up structures 140a and 140b that correspondingly form the recesses 146a and 146b. Moreover, the step of removing portions of the second conductive layers 144a and 144b is, for example, a laser drilling process or other suitable process, but the invention is not limited thereto. Thereafter, as shown in FIG. 1H, the portion of the second dielectric layer 142a corresponding to the predetermined region 148a is removed, and the portion of the second dielectric layer 142b corresponding to the predetermined region 148b is removed. Similarly, the step of removing portions of the second dielectric layers 142a and 142b is, for example, a laser drilling process or other suitable process, but the invention is not limited thereto. As such, the portions of the build-up structures 140a and 140b that are removed (ie, the predetermined regions 148a and 148b) may correspond to the recesses 146a and 146b. So far, the line structure 100 of the buried heat sink 120 of the present embodiment has been initially completed.

Further, in step S160, the steps of forming the recesses 146a and 146b on the predetermined regions 148a and 148b of the build-up structures 140a and 140b are to add the build-up structures 140a and 140b (including the second conductive layers 144a, 144b and the second dielectric layer). Electrical layer 142a, 142b) is partially removed corresponding to the predetermined regions 148a, 148b. Accordingly, in order to make the step of removing the partial build-up structures 140a and 140b easier, in the present embodiment, the method for fabricating the line structure 100 of the buried heat sink 120 further includes the following steps: pressing the build-up structure 140a Before the step of 140b on the core board 110 (step S150), a release film not shown is disposed on the core board 110, and the release film corresponds to the predetermined areas 148a, 148b of the build-up structures 140a and 140b. In other words, in the present embodiment, before the step of pressing the build-up structures 140a and 140b on the core board 110 (step S150), a release film is disposed in the predetermined area 148a of the core board 110 and the build-up structure 140a. Between and another release film is disposed between the core plate 110 and the predetermined region 148b of the build-up structure 140b. The projected area of the release film on the core panel 110 is substantially equal to the projected area of the predetermined regions 148a and 148b on the core panel 110. Thereafter, in the step of pressing the build-up structures 140a and 140b on the core board 110 (step S150), portions of the build-up structures 140a and 140b corresponding to the predetermined areas 148a and 148b are disposed on the release film. Thus, in the step of forming the recesses 146a and 146b on the predetermined regions 148a and 148b of the build-up structures 140a and 140b (step S160), the predetermined regions 148a and 148b of the build-up structures 140a and 140b may be associated with the corresponding release film. Also removed, but other portions of the build-up structures 140a and 140b that are not in contact with the release film are still disposed on the core panel 110 and cover the corresponding inner layer traces 130a and 130b. In addition, since the present embodiment is exemplified by the two-layer build-up structures 140a and 140b, the present embodiment also employs two-layer release film, but in other embodiments in which only one build-up structure 140a and 140b is disposed, the form is off-line. The number of membranes can also be adjusted to one layer, and the invention is not limited thereto.

2 is a schematic view of the wiring structure of the buried heat sink of FIG. 1H after assembling other components. Referring to FIG. 2 , in the embodiment, the line structure 100 of the buried heat sink 120 can also be configured with applicable electronic components, such as the wafer 150 , to increase the use function of the line structure 100 of the buried heat sink 120 . In addition, in the embodiment in which the wafer 150 or other electronic components are disposed, the wiring structure 100 of the buried heat sink 120 can also configure the heat sink 160 according to requirements to increase the heat dissipation efficiency of the wiring structure 100 of the buried heat sink 120. Specifically, in the present embodiment, the dimensions of the grooves 146a and 146b (for example, represented by the widths W1 and W2) are larger than the size of the through hole 116 (for example, represented by the width W3), and the size ratio thereof is, for example, 1.5. Between 2, but the actual size can be adjusted according to demand. As such, the wafer 150, heat sink 160, or other suitable components can be disposed within the recesses 146a and 146b and connected to the wiring structure 100 that houses the thermal block 120.

Further, in the embodiment, the manufacturing method of the wiring structure 100 for embedding the heat dissipation block 120 further includes the steps of: arranging the wafer 150 in the recess 146a, and electrically connecting the wafer 150 to the corresponding inner layer line 130a. The heat sink 160 is disposed in the recess 146b, and the heat sink 160 is connected to the heat sink block 120. In other words, since the wiring structure 100 of the buried heat sink 120 of the present embodiment has two recesses 146a and 146b, it can be configured with two components, such as the wafer 150 and the heat sink 160 used in the present embodiment. However, the present invention does not limit the types of components disposed in the recesses 146a and 146b, nor does it limit the configuration of the wafer 150 and the heat sink 160. Since the wafer 150 is disposed in the recess 146a and electrically connected to the inner layer line 130a located on the core board 110, the heat generated by the wafer 150 during operation is transparent. The heat sink block 120 is transferred to the other side of the core board 110. In addition, since the other recess 146b of the embodiment is provided with the heat sink 160, the heat generated by the wafer 150 can be transmitted to the other side of the core board 110 through the heat sink 120, and then transmitted to the heat sink 160. The inner core board 110 is outside. As such, the line structure 100 of the buried heat sink 120 has a good heat dissipation effect.

Furthermore, the heat dissipation block 120 of the present embodiment is disposed only on the core plate 110 as compared with the conventional method of disposing the heat dissipation block in the entire circuit structure, so that the length thereof is substantially equal to the thickness of the core plate 110. As described above, the manufacturing method of the line structure 100 of the buried heat sink 120 of the present embodiment can reduce the manufacturing cost of the line structure 100 and shorten the heat dissipation path of the line structure 100. Further, in the present embodiment, the wafer 150 and the heat sink 160 are disposed in the recess 146a or 146b as compared with the conventional method of directly disposing an element such as a wafer and a heat sink on the outer surface of the wiring structure. Accordingly, the method of fabricating the line structure 100 of the buried heat sink 120 of the present embodiment can reduce the assembly thickness of the line structure 100.

3A to 3G are schematic views showing the fabrication of a wiring structure of a buried heat sink according to another embodiment of the present invention. Referring to FIG. 3A to FIG. 3G, in the embodiment, the manufacturing method of the buried heat dissipation block line structure 100a (shown in FIG. 3G) includes the following steps: In step S210, the core board 110 is provided. In step S220, two inner layer lines 130a and 130b are formed on opposite sides of the core board 110. In step S230, the build-up structures 140a and 140b are pressed onto the core board 110. In step S240, grooves 146a and 146b are formed on predetermined regions 148a and 148b of the build-up structures 140a and 140b, and the grooves 146a and 146b are communicated to the corresponding inner layer line 130a and 130b. In step S250, a through hole 116 penetrating the core plate 110 is formed. In step S260, the heat slug 120 is disposed in the through hole 116, and the grooves 146a and 146b correspond to the heat slug 120. The above steps will be described in order with the text in conjunction with FIG. 3A to FIG. 3G.

First, referring to FIG. 3A, in step S210, the core board 110 is provided. In this embodiment, specifically, in the embodiment, the core board 110 includes a first dielectric layer 112 and two first conductive layers 114a and 114b, and the two first conductive layers 114a and 114b are respectively located at the first The opposite sides of the dielectric layer 112. For the implementation of the core board 110, reference may be made to the description of the foregoing step S110, and details are not described herein.

Next, referring to FIG. 3B and FIG. 3C, in step S220, two inner layer lines 130a and 130b are formed. Specifically, in this embodiment, before the steps of forming the two inner layer lines 130a and 130b on opposite sides of the core board 110 (step S220), the conductive materials 118a and 118b are respectively disposed on the first conductive layer 114a and On 114b (as shown in Figure 3B). Conductive materials 118a and 118b are, for example, copper or other suitable electrically conductive material and are formed on first conductive layers 114a and 114b by an electroplating process or other suitable process. In addition, conductive holes (not shown) may be disposed on the core board 110, and the conductive materials 118a and 118b are filled in the conductive holes to electrically connect the subsequently formed inner layer lines 130a and 130b to each other. Thereafter, in step S220, the two first conductive layers 114a and 114b and the conductive materials 118a and 118b disposed thereon are patterned according to the required line layout by an etching process or other applicable process to obtain the first Conductive layers 114a and 114b and conductive materials 118a and 118b form two inner layer lines 130a and 130b (as shown in Figure 3C). Related inner layer lines 130a and 130b For the implementation of the embodiment, reference may be made to the descriptions of FIG. 1D to FIG. 1E and step S140, and details are not described herein.

Next, referring to FIG. 3D, in step S230, the build-up structures 140a and 140b are pressed onto the core board 110. Specifically, in this embodiment, the number of the build-up structures 140a and 140b is exemplified by two, and the build-up structures 140a and 140b are respectively disposed on opposite sides of the core board 110, but the present invention does not limit the increase. The number of layer structures 140a and 140b. The build-up structure 140a includes a second dielectric layer 142a and a second conductive layer 144a, wherein the second dielectric layer 142a is located between the second conductive layer 144a and the core board 110 and covers the inner layer line 130a. Similarly, the build-up structure 140b includes a second dielectric layer 142b and a second conductive layer 144b, wherein the second dielectric layer 142b is located between the second conductive layer 144b and the core board 110 and covers the inner layer line 130b. For the implementation of the layered structures 140a and 140b, reference may be made to the description of FIG. 1F and step S150, and details are not described herein.

Next, referring to FIG. 3E, in step S240, grooves 146a and 146b are formed on predetermined regions 148a and 148b of the build-up structures 140a and 140b, and the grooves 146a and 146b are communicated to the corresponding inner layer lines 130a and 130b. Specifically, in the present embodiment, the steps of forming the recesses 146a and 146b on the predetermined regions 148a and 148b of the build-up structures 140a and 140b are to add the build-up structures 140a and 140b (including the second conductive layers 144a, 144b). The second dielectric layer 142a, 142b) is partially removed corresponding to the predetermined regions 148a and 148b to form recesses 146a and 146b, wherein the recesses 146a and 146b extend through the corresponding build-up structures 140a and 140b to communicate to corresponding Inner layer lines 130a and 130b. In addition, a portion of the second conductive layers 144a and 144b are removed. The steps of removing the portions of the second dielectric layers 142a and 142b may be performed separately by two processes, and the recesses 146a and 146b are formed correspondingly on the predetermined regions 148a and 148b of the build-up structures 140a and 140b. In addition, in order to make the steps of forming the grooves 146a and 146b easier, the release film (not shown) may be disposed on the core board 110 in advance, and the build-up structures 140a and 140b may correspond to the predetermined areas 148a and 148b. Partially pressed onto the release film. Thus, in the step of forming the grooves 146a and 146b (step S240), the predetermined regions 148a and 148b of the build-up structures 140a and 140b may be removed together with the release film, but the build-up structures 140a and 140b are not in contact with the release. Other portions of the film are still disposed overlying the corresponding inner layer lines 130a and 130b. For the manner of forming the grooves 146a and 146b, reference may be made to the descriptions of FIG. 1G and FIG. 1H and step S160, and details are not described herein.

Next, referring to FIG. 3F, in step S250, a through hole 116 is formed through the core plate 110. Specifically, in the embodiment, the through hole 116 is formed on the core plate 110, wherein the step of forming the through hole 116 may be a mechanical drilling process, a laser drilling process or other applicable processes, and the invention is not limited to the formation. The way of the through hole 116. In addition, in the present embodiment, the through holes 116 correspond to the grooves 146a and 146b and communicate with the grooves 146a and 146b, and the sizes of the grooves 146a and 146b are larger than the size of the through holes 116, and the size ratio thereof is, for example, 1.5. Between 2, but the invention is not limited thereto, and the actual size can be adjusted according to requirements. For the manner of forming the through hole 116, reference may be made to the description of FIG. 1B and step S120, and details are not described herein.

Finally, referring to FIG. 3G, in step S260, the heat dissipation block 120 is disposed in the through hole 116, and the grooves 146a and 146b correspond to the heat dissipation block 120. in particular, In this embodiment, the heat dissipation block 120 is made of metal, preferably a metal having good heat dissipation, such as copper, and the size of the heat dissipation block 120 is slightly smaller than the size of the through hole 116. For example, the size ratio is, for example, Between 0.8 and 1. However, the present invention is not limited to the above embodiment, and the material and size of the heat dissipation block 120 can be adjusted according to requirements. Since the size of the heat sink block 120 is slightly smaller than the size of the through hole 116, the heat sink block 120 can be smoothly filled into the through hole 116, and it can be positioned in the through hole 116 by contacting the inner surface of the through hole 116. Accordingly, the heat sink 120 can be fixed in the through hole 116 without using an additional adhesive layer. For the configuration of the heat dissipation block 120, reference may be made to the description of FIG. 1C and step S130, and details are not described herein. So far, the line structure 100a of the buried heat sink 120 of the present embodiment has been initially completed. The heat dissipation block 120 of the present embodiment is disposed only on the core board 110, so that the circuit structure 100a of the buried heat dissipation block 120 of the present embodiment can be fabricated. The manufacturing cost of the line structure 100a is reduced, and the heat dissipation path of the line structure 100a can be shortened.

Based on the above, the method for fabricating the line structure 100a of the buried heat sink 120 of the present embodiment (steps S210 to S260) and the method for manufacturing the line structure 100 of the buried heat sink block 120 of the previous embodiment (steps S110 to S160) The main difference is the sequence of steps. Accordingly, the line structure 100a of the present embodiment has a similar structure and efficacy as the line structure 100 of the previous embodiment. In addition, the circuit structure 100a of the buried heat dissipating block 120 of the present embodiment can also be matched with the circuit structure 100 and the heat sink 160 of the buried heat dissipating block 120 shown in FIG. 2, and the related content can be related to FIG. Description, but the invention does not limit the wafer 150 and the heat sink 160 Configuration or not. In this manner, the wafer 150 and the heat sink 160 of the present embodiment are disposed in the recess 146a or 146b as compared with the conventional method of directly disposing the components such as the wafer and the heat sink on the outer surface of the circuit structure. The manufacturing method of the wiring structure 100a in which the heat sink block 120 is buried can reduce the assembly thickness of the wiring structure 100a.

Moreover, in the embodiment, the through holes 116 are formed on the core plate 110 after the inner layer lines 130a and 130b are formed, so that the heat dissipation blocks 120 disposed in the through holes 116 communicate with the grooves 146a and 146b, and subsequently The wafer 150 and the heat sink 160 assembled into the recesses 146a and 146b can directly contact the heat dissipating block 120, so that the thermal energy generated by the wafer 150 during operation can be directly transmitted to the heat sink 160 through the heat slug 120 and through the heat sink 160. Passed to the outside of the core board 110. In contrast, in the previous embodiment, the through holes 116 are formed on the core plate 110 before the inner layer lines 130a and 130b are formed, so that the inner layer lines 130a and 130b partially cover the heat dissipation block located in the through holes 116. 120, and the wafer 150 and the heat sink 160 subsequently assembled into the recesses 146a and 146b are disposed on the corresponding inner layer lines 130a and 130b. However, the above structural differences do not affect the heat dissipation function of the line structures 100 and 100a. Therefore, the manufacturing method of the line structures 100 and 100a of the buried heat dissipation block 120 can be adjusted according to requirements.

In addition, the foregoing embodiment is exemplified by embedding the heat dissipation block 120 on the core board 110. However, the invention is not limited to the embodiments described above. In other embodiments not shown, the wiring structure of the buried heat sink may be configured with a plurality of build-up structures, for example, two or more build-up structures are disposed on opposite sides of the core plate. At this time, the through hole may extend into the buildup structure of the inner layer in addition to the core plate. relatively Ground, the groove is only disposed on the buildup structure located on the outer layer. Thus, the depth of the through hole is equal to the total thickness of the core layer and the layered structure of the inner layer, so that the through hole can be matched with the heat sink block having a long length, thereby making the line structure have a long heat dissipation path. Thereby, the purpose of burying the heat sink block and arranging the groove in the line structure can also be achieved. Therefore, the length of the heat dissipation block and the depth of the through hole can be adjusted according to requirements, and the size of the groove is larger than the size of the through hole, so that components such as a wafer or a heat sink can be disposed therein.

In summary, the method for fabricating the buried heat sink block structure of the present invention has a through hole disposed on the core plate, and a groove is disposed on the build-up structure that is pressed onto the core plate, wherein the through hole is provided with heat dissipation. Block, and the groove is connected to the core board. In this way, the manufacturing method of the buried heat sink block structure of the present invention can reduce the manufacturing cost of the line structure and shorten the heat dissipation path of the line structure, compared with the conventional manufacturing method in which the heat sink block is buried in the entire line structure. In addition, the wiring structure of the buried heat sink of the present invention may be further configured with a wafer or a heat sink, and the wafer or the heat sink is disposed in the recess. In this way, the manufacturing method of the buried heat sink block structure of the present invention can reduce the assembly thickness of the circuit structure when assembling other components, compared to the conventional method of directly disposing the wafer or the heat sink on the outer surface of the circuit structure. .

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100‧‧‧Line structure

110‧‧‧ core board

116‧‧‧through holes

120‧‧‧heat block

130a, 130b‧‧‧ inner line

140a, 140b‧‧‧ layered structure

142a, 142b‧‧‧ second dielectric layer

144a, 144b‧‧‧ second conductive layer

146a, 146b‧‧‧ grooves

148a, 148b‧‧‧Predetermined area

W1, W2, W3‧‧‧ width

Claims (4)

A method for fabricating a line structure of a buried heat sink includes: providing a core board, wherein the core board includes a first dielectric layer and two first conductive layers, and the two first conductive layers are respectively located at the first The opposite sides of the dielectric layer; forming a uniform hole penetrating the core plate; arranging a heat dissipating block in the through hole; forming two inner layer lines on opposite sides of the core plate; and disposing a release film on the core plate And bonding at least one build-up structure to the core plate, wherein the build-up structure comprises a second dielectric layer and a second conductive layer, and the second dielectric layer is located on the second conductive layer Between the core plates; and forming a recess in a predetermined area of the build-up structure, wherein the release film corresponds to the predetermined area of the build-up structure, the predetermined area of the build-up structure and the release form The film is removed to form the recess on the build-up structure, and the recess is connected to the corresponding inner layer trace and corresponds to the heat sink block. The method for fabricating a line structure of a buried heat sink according to claim 1, further comprising: arranging a wafer in the groove, and electrically connecting the chip to the corresponding inner layer line, or configuring one A heat sink is disposed in the recess, and the heat sink is coupled to the heat sink block. A method for fabricating a line structure of a buried heat sink includes: providing a core board, wherein the core board includes a first dielectric layer and two first conductive layers, and the two first conductive layers are respectively located at the first The opposite sides of the dielectric layer; Forming two inner layer lines on opposite sides of the core board; arranging a release film on the core board; pressing at least one buildup structure on the core board, wherein the build-up structure includes a second dielectric layer And a second conductive layer between the second conductive layer and the core plate; forming a groove on a predetermined region of the buildup structure, wherein the release film corresponds to The predetermined region of the buildup structure is such that the predetermined region of the buildup structure and the release film are removed to form the groove on the buildup structure, and the groove is connected to the corresponding inner layer a line; forming a uniform hole penetrating the core plate; and arranging a heat sink block in the through hole, and the groove corresponds to the heat sink block. The method for fabricating the line structure of the embedded heat sink block according to claim 3, further comprising: arranging a wafer in the groove, and electrically connecting the chip to the corresponding inner layer line, or configuring one A heat sink is disposed in the recess, and the heat sink is coupled to the heat sink block.