TWI544602B - 可適性靜電放電保護電路 - Google Patents

可適性靜電放電保護電路 Download PDF

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Publication number
TWI544602B
TWI544602B TW100146298A TW100146298A TWI544602B TW I544602 B TWI544602 B TW I544602B TW 100146298 A TW100146298 A TW 100146298A TW 100146298 A TW100146298 A TW 100146298A TW I544602 B TWI544602 B TW I544602B
Authority
TW
Taiwan
Prior art keywords
gate
transistor
integrated circuit
circuit device
pmos transistor
Prior art date
Application number
TW100146298A
Other languages
English (en)
Chinese (zh)
Other versions
TW201232749A (en
Inventor
飛利浦 迪瓦
尼可拉斯 富勒
蓋特 巴特 迪
Original Assignee
微晶片科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 微晶片科技公司 filed Critical 微晶片科技公司
Publication of TW201232749A publication Critical patent/TW201232749A/zh
Application granted granted Critical
Publication of TWI544602B publication Critical patent/TWI544602B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H01L27/0285—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW100146298A 2010-12-21 2011-12-14 可適性靜電放電保護電路 TWI544602B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201061425552P 2010-12-21 2010-12-21
US13/288,080 US8462473B2 (en) 2010-12-21 2011-11-03 Adaptive electrostatic discharge (ESD) protection circuit

Publications (2)

Publication Number Publication Date
TW201232749A TW201232749A (en) 2012-08-01
TWI544602B true TWI544602B (zh) 2016-08-01

Family

ID=46234096

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100146298A TWI544602B (zh) 2010-12-21 2011-12-14 可適性靜電放電保護電路

Country Status (5)

Country Link
US (1) US8462473B2 (de)
EP (1) EP2656386A1 (de)
CN (1) CN103339727B (de)
TW (1) TWI544602B (de)
WO (1) WO2012087614A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8829967B2 (en) * 2012-06-27 2014-09-09 Triquint Semiconductor, Inc. Body-contacted partially depleted silicon on insulator transistor
US8817437B2 (en) * 2013-01-03 2014-08-26 Amazing Microelectronics Corp. High voltage open-drain electrostatic discharge (ESD) protection device
US9214932B2 (en) 2013-02-11 2015-12-15 Triquint Semiconductor, Inc. Body-biased switching device
US9203396B1 (en) 2013-02-22 2015-12-01 Triquint Semiconductor, Inc. Radio frequency switch device with source-follower
US9130562B2 (en) 2013-03-13 2015-09-08 Alpha And Omega Semiconductor Incorporated Active ESD protection circuit
US9373612B1 (en) * 2013-05-31 2016-06-21 Altera Corporation Electrostatic discharge protection circuits and methods
JP2014241497A (ja) 2013-06-11 2014-12-25 ローム株式会社 半導体集積回路
US9153958B2 (en) * 2013-08-15 2015-10-06 Nxp B.V. Bias-insensitive trigger circuit for bigFET ESD supply protection
US9379698B2 (en) * 2014-02-04 2016-06-28 Triquint Semiconductor, Inc. Field effect transistor switching circuit
CN103887306B (zh) * 2014-03-05 2017-03-01 晶焱科技股份有限公司 高电压开漏极静电放电(esd)保护装置
DE102016111641A1 (de) * 2016-06-24 2017-12-28 Infineon Technologies Ag Schalter
CN107945829A (zh) * 2016-10-13 2018-04-20 中国矿业大学 一种忆导值可调的门极可控三端口忆阻器模拟电路
FR3059164B1 (fr) 2016-11-18 2020-09-18 Continental Automotive France Dispositif de protection d'un calculateur electronique contre un court-circuit
US10749337B2 (en) 2017-02-09 2020-08-18 Texas Instruments Incorporated Integrated ESD event sense detector
CN109922394B (zh) * 2017-12-13 2020-09-29 华为终端有限公司 偏置电压输出电路及驱动电路
US20200243512A1 (en) * 2019-01-28 2020-07-30 Stmicroelectronics International N.V. Nmos transistor with bulk dynamically coupled to drain
TWI729493B (zh) * 2019-09-12 2021-06-01 友達光電股份有限公司 畫素陣列基板
DE102020103706A1 (de) * 2020-02-13 2021-08-19 Infineon Technologies Ag Halbleiterschalter mit esd-schutzschaltung
US10938387B1 (en) 2020-06-24 2021-03-02 Cypress Semiconductor Corporation Local interconnect network (LIN) driver circuit
CN112074065A (zh) * 2020-08-31 2020-12-11 上海法雷奥汽车电器系统有限公司 静电防护方法、设备、计算机设备以及可读存储介质

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6747861B2 (en) * 2001-11-15 2004-06-08 Industrial Technology Research Institute Electrostatic discharge protection for a mixed-voltage device using a stacked-transistor-triggered silicon controlled rectifier
TWI264106B (en) 2002-04-30 2006-10-11 Winbond Electronics Corp Static charge protection circuit of adopting gate-coupled MOSFET (metal-oxide-semiconductor field effect transistor)
US7102862B1 (en) * 2002-10-29 2006-09-05 Integrated Device Technology, Inc. Electrostatic discharge protection circuit
TWI296439B (en) * 2005-08-08 2008-05-01 Silicon Integrated Sys Corp Esd protection circuit
US7495878B2 (en) * 2007-03-22 2009-02-24 Bae Systems Information And Electronic Systems Integration Inc. Decoupling capacitor control circuit and method for enhanced ESD performance
US7876540B2 (en) 2007-11-21 2011-01-25 Microchip Technology Incorporated Adaptive electrostatic discharge (ESD) protection of device interface for local interconnect network (LIN) bus and the like
US8345396B2 (en) * 2010-03-08 2013-01-01 Macronix International Co., Ltd. Electrostatic discharge protectors having increased RC delays

Also Published As

Publication number Publication date
CN103339727A (zh) 2013-10-02
US8462473B2 (en) 2013-06-11
EP2656386A1 (de) 2013-10-30
WO2012087614A1 (en) 2012-06-28
US20120154963A1 (en) 2012-06-21
TW201232749A (en) 2012-08-01
CN103339727B (zh) 2016-03-23

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MM4A Annulment or lapse of patent due to non-payment of fees