TWI542951B - 用於光阻淋洗溶液之全氟烷基磺醯胺界面活性劑 - Google Patents

用於光阻淋洗溶液之全氟烷基磺醯胺界面活性劑 Download PDF

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Publication number
TWI542951B
TWI542951B TW101128804A TW101128804A TWI542951B TW I542951 B TWI542951 B TW I542951B TW 101128804 A TW101128804 A TW 101128804A TW 101128804 A TW101128804 A TW 101128804A TW I542951 B TWI542951 B TW I542951B
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TW
Taiwan
Prior art keywords
solution
photoresist
perfluoroalkylsulfonamide
photoresist material
aqueous
Prior art date
Application number
TW101128804A
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English (en)
Chinese (zh)
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TW201314373A (zh
Inventor
傑森 麥克 奇瑞恩
派翠西亞 瑪莉 沙維
馬修 詹姆士 皮諾
Original Assignee
３Ｍ新設資產公司
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Application filed by ３Ｍ新設資產公司 filed Critical ３Ｍ新設資產公司
Publication of TW201314373A publication Critical patent/TW201314373A/zh
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Publication of TWI542951B publication Critical patent/TWI542951B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Emulsifying, Dispersing, Foam-Producing Or Wetting Agents (AREA)
TW101128804A 2011-08-10 2012-08-09 用於光阻淋洗溶液之全氟烷基磺醯胺界面活性劑 TWI542951B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201161522057P 2011-08-10 2011-08-10

Publications (2)

Publication Number Publication Date
TW201314373A TW201314373A (zh) 2013-04-01
TWI542951B true TWI542951B (zh) 2016-07-21

Family

ID=47669161

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101128804A TWI542951B (zh) 2011-08-10 2012-08-09 用於光阻淋洗溶液之全氟烷基磺醯胺界面活性劑

Country Status (7)

Country Link
US (1) US9551936B2 (https=)
EP (1) EP2742523B1 (https=)
JP (1) JP6101693B2 (https=)
KR (1) KR102000800B1 (https=)
CN (1) CN103717706B (https=)
TW (1) TWI542951B (https=)
WO (1) WO2013022673A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6444316B2 (ja) 2013-01-29 2018-12-26 スリーエム イノベイティブ プロパティズ カンパニー 界面活性剤並びにその製造及び使用方法
KR101530606B1 (ko) * 2014-03-18 2015-07-01 주식회사 스노젠 인산 및 황산계 과불소화알킬 에스테르 계면 활성제와 이를 함유하는 크롬 식각액 및 저온 공정용 소핑제
EP3191532B1 (en) 2014-09-11 2019-08-28 3M Innovative Properties Company Fluorinated surfactant containing compositions
JP7039865B2 (ja) * 2017-05-26 2022-03-23 大日本印刷株式会社 パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム
KR102760295B1 (ko) 2017-11-28 2025-01-24 바스프 에스이 제품을 세정하거나 또는 헹구기 위한, 1 차 및 2 차 계면활성제를 포함하는 조성물
US11762297B2 (en) * 2019-04-09 2023-09-19 Tokyo Electron Limited Point-of-use blending of rinse solutions to mitigate pattern collapse
CN114788527B (zh) * 2022-05-10 2024-03-01 广西产研院生物制造技术研究所有限公司 一种碘酸混合溶液消毒剂、制备方法及其在生猪圈舍消毒中的应用
KR20240063604A (ko) * 2022-11-03 2024-05-10 삼성전자주식회사 반도체 소자의 제조 방법

Family Cites Families (20)

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US2567011A (en) 1949-01-10 1951-09-04 Minnesota Mining & Mfg Fluorocarbon acids and derivatives
DE2024909B2 (de) 1970-05-22 1977-09-29 Bayer Ag, 5090 Leverkusen Verfahren zur herstellung von n-hydroxyalkyl-perfluoralkansulfonamiden und einige n,n-bis-(hydroxyalkyl)-perfluor-alkansulfonamide
US4089804A (en) 1976-12-30 1978-05-16 Ciba-Geigy Corporation Method of improving fluorinated surfactants
DE2921142A1 (de) 1979-05-25 1980-12-11 Bayer Ag Verwendung von perfluoralkansulfonamid- salzen als tenside
JP3217116B2 (ja) * 1992-03-06 2001-10-09 日産化学工業株式会社 低表面張力洗浄用組成物
DE60021459T2 (de) * 1999-03-25 2006-04-20 Dainippon Ink And Chemicals, Inc. Flachdruckplatte und Bebilderungsverfahren
JP4075275B2 (ja) 1999-03-25 2008-04-16 大日本インキ化学工業株式会社 感光性組成物、印刷版原版及び画像形成方法
US20040029395A1 (en) 2002-08-12 2004-02-12 Peng Zhang Process solutions containing acetylenic diol surfactants
JP4855616B2 (ja) 1999-10-27 2012-01-18 スリーエム イノベイティブ プロパティズ カンパニー フルオロケミカルスルホンアミド界面活性剤
US6890452B2 (en) 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
US7169323B2 (en) * 2002-11-08 2007-01-30 3M Innovative Properties Company Fluorinated surfactants for buffered acid etch solutions
JP4493393B2 (ja) 2004-04-23 2010-06-30 東京応化工業株式会社 リソグラフィー用リンス液
JP4767829B2 (ja) 2006-01-11 2011-09-07 東京応化工業株式会社 リソグラフィー用洗浄剤及びそれを用いたレジストパターン形成方法
JP2007219009A (ja) * 2006-02-14 2007-08-30 Az Electronic Materials Kk レジスト基板用処理液とそれを用いたレジスト基板の処理方法
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
US20080280230A1 (en) * 2007-05-10 2008-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process including a chemical rinse
JP5089422B2 (ja) * 2008-02-15 2012-12-05 岡本化学工業株式会社 感光性組成物およびそれを用いた平版印刷版用原版
WO2010074877A1 (en) 2008-12-23 2010-07-01 3M Innovative Properties Company Method of making a composition and aqueous composition preparable thereby
US20100155657A1 (en) 2008-12-23 2010-06-24 3M Innovative Properties Company Aqueous composition containing fluorinated sulfonamide and sulfonamidate compounds
JP5624753B2 (ja) 2009-03-31 2014-11-12 東京応化工業株式会社 リソグラフィー用洗浄液及びこれを用いたレジストパターンの形成方法

Also Published As

Publication number Publication date
CN103717706A (zh) 2014-04-09
KR20140052010A (ko) 2014-05-02
WO2013022673A2 (en) 2013-02-14
WO2013022673A3 (en) 2013-06-06
US20140154632A1 (en) 2014-06-05
JP2014527200A (ja) 2014-10-09
CN103717706B (zh) 2015-09-23
JP6101693B2 (ja) 2017-03-22
TW201314373A (zh) 2013-04-01
KR102000800B1 (ko) 2019-07-16
EP2742523A4 (en) 2015-01-21
EP2742523A2 (en) 2014-06-18
EP2742523B1 (en) 2020-09-23
US9551936B2 (en) 2017-01-24

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