TWI540771B - 發光二極體元件及應用其之發光二極體燈具 - Google Patents

發光二極體元件及應用其之發光二極體燈具 Download PDF

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TWI540771B
TWI540771B TW103101994A TW103101994A TWI540771B TW I540771 B TWI540771 B TW I540771B TW 103101994 A TW103101994 A TW 103101994A TW 103101994 A TW103101994 A TW 103101994A TW I540771 B TWI540771 B TW I540771B
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light
emitting diode
lead frame
component
protective
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TW103101994A
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TW201530832A (zh
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柯博喻
張翌誠
王君偉
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隆達電子股份有限公司
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Priority to US14/305,071 priority patent/US9245877B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
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Description

發光二極體元件及應用其之發光二極體燈具
本發明是有關於一種發光二極體元件及應用其之發光二極體燈具。本發明特別是有關於一種保護元件以任一邊均不平行或垂直於導線架之一延伸方向的方式設置的發光二極體元件，及應用其之發光二極體燈具。
一般來說，發光二極體元件可包括保護元件。保護元件與發光二極體晶片形成並聯迴路，在反向突波時發生時，提供電流宣洩路徑。
如果將保護元件與發光二極體晶片一同設置在發光二極體元件的容納部內，保護元件可能會吸收光線而導致發光二極體元件的發光效率下降。對此，一種解決方案是將保護元件埋設於殼體中。在這樣的配置方式下，發光二極體晶片發出的光不會照射到保護元件，因此可避免保護元件吸收光線而導致發光二極體元件的發光效率下降的問題。在製作這類的發光二極體元件時，通常是將保護元件設置在支架上，之後以射出塑料等方式形成殼體，藉此將保護元件埋入殼體中。
在傳統的發光二極體元件裡，保護元件是以對齊支 架側邊的方式設置。然而，高速高溫的塑料會在射出時衝擊保護元件，在這樣的配置方式下，可能使得將保護元件固定在支架上的導電膠體受損，進而導致保護元件失效。並且，由於塑料在流動時受到保護元件的阻礙，將使得發光二極體元件產品的成形良率下降。
本發明提供一種發光二極體元件及應用其之發光二極體燈具。在此種發光二極體元件中，保護元件以任一邊均不平行或垂直於導線架之一延伸方向的方式設置。因此，可避免保護元件失效和成形良率下降的問題。
根據本發明的一些實施例，一種發光二極體元件包括一支架、一殼體、一發光二極體晶片以及一保護元件。支架具有彼此分離的(isolated)一第一導線架及一第二導線架，沿一第一方向延伸排列。殼體部分包覆第一、第二導線架，且具有一裸露出部分第一、第二導線架表面的容納部。發光二極體晶片設置在容納部中裸露的第一導線架表面，且分別電性連接第一、第二導線架。保護元件設置於被殼體包覆的第二導線架表面，保護元件並電性連接至第一導線架。其中保護元件在第二導線架上的垂直投影，其任一邊均不平行也不垂直於第一方向。
根據本發明的一些實施例，一種發光二極體燈具包括一基板、一如前所述的發光二極體元件以及一驅動電路。發光二極體元件設置於基板上。驅動電路電性連接發光二極體元件，用以控制發光二極體元件的開啟或關閉。
為了對本發明之上述及其他方面有更佳的瞭解，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下：
10‧‧‧發光二極體燈具
12‧‧‧基板
14‧‧‧驅動電路
100‧‧‧發光二極體元件
110‧‧‧支架
112‧‧‧第一導線架
114‧‧‧第二導線架
112s1、114s1‧‧‧裸露出的表面
112s2、114s2‧‧‧被包覆的表面
120‧‧‧殼體
122‧‧‧容納部
130‧‧‧發光二極體晶片
140‧‧‧保護元件
140a1~140a4‧‧‧保護元件的投影的邊
150‧‧‧封裝膠體
152‧‧‧波長轉換體
160‧‧‧導電膠體
170‧‧‧導線
D1‧‧‧第一方向
第1A-1D圖是根據本發明一實施例之發光二極體元件的示意圖。
第2圖是根據本發明一實施例之發光二極體燈具的示意圖。
第1A-1D圖繪示根據本發明一實施例之發光二極體元件100，為了清楚起見，部分圖式中可能省略部分元件和/或元件符號。第1A圖為發光二極體元件100的俯視示意圖。第1B圖為發光二極體元件100沿著第1A圖中1-1’線的剖面示意圖。第1C圖為發光二極體元件100沿著第1A圖中2-2’線的剖面示意圖。第1D圖為發光二極體元件100在第1A圖之區域A的局部放大示意圖。發光二極體元件100包括一支架110、一殼體120、一發光二極體晶片130以及一保護元件140。
如第1A圖所示，支架110具有彼此分離的(isolated)的一第一導線架112及一第二導線架114。第一導線架112及第二導線架114沿一第一方向D1延伸排列。第一方向D1亦是支架110的延伸方向。在此，「分離的」不僅意指空間上的分開，也意指電性上的隔離。
殼體120部分包覆第一、第二導線架112、114，使得第一、第二導線架112、114分別具有裸露出的表面112s1、114s1 及被包覆的(covered)表面112s2、114s2。殼體120具有一裸露出部分第一、第二導線架表面112s1、114s1的容納部122。在一些實施例中，容納部122的內面可具有反射性，殼體120可作為反射發光二極體晶片130所發出的光的反射杯。殼體120可由熱固性或熱塑性材料所構成。
如第1B圖所示，發光二極體晶片130設置在容納部122中裸露的第一導線架表面112s1，且分別電性連接第一、第二導線架112、114。在一些實施例中，發光二極體晶片130為藍光發光二極體晶片，但不限於此。
如第1C圖所示，保護元件140設置於被殼體120包覆的第二導線架表面114s2，保護元件140並電性連接至第一導線架112。在一些實施例中，如第1C圖所示，保護元件140係以一導電膠體160固定於第二導線架114上，並打線連接至第一導線架112。在一些實施例中，連接保護元件140與第一導線架112的導線170可例如是金線。保護元件140可與發光二極體晶片130反向並聯。在一些實施例中，保護元件140可為穩壓元件，例如是一齊納二極體(Zener diode)。
如第1A及1D圖所示，保護元件140在第二導線架114上的垂直投影，其任一邊140a1~140a4(示於第1D圖)均不平行也不垂直於第一方向D1。此外，如第1A圖所示，第一方向D1實質上平行於第二導線架114的一邊。在這樣的配置方式下，當沿著第一方向D1射出用來形成殼體120的塑料時，高速高溫的塑料的流動會如第1D圖中箭頭所指示般繞過保護元件140。因此，塑料可以在不受到過多阻礙的情況下流過保護元件140，進 而提高發光二極體元件100的成形良率。並且，導電膠體160較不會因為塑料衝擊的影響而受損，可避免已設置在支架110上的保護元件140因發光二極體元件100的後續製程而失效。在一些實施例中，如第1A及1D圖所示，保護元件140在第二導線架114上的垂直投影的任一邊140a1~140a4與第一方向D1夾45°角或135°角，但不限於此。
在一些實施例中，發光二極體元件100可更包括一封裝膠體150。如第1B圖所示，封裝膠體150填充於容納部122中並封裝(encapsulate)發光二極體晶片130。類似於殼體120，封裝膠體150可由熱固性或熱塑性材料所構成。在一些實施例中，封裝膠體150內可更包括有複數波長轉換體152，波長轉換體152可吸收部份發光二極體晶片130所發出之第一光線，並轉換成一波長較長的第二光線，且第一、第二光線混光成一第三光線。舉例來說，當發光二極體晶片130為藍光發光二極體晶片，波長轉換體152可以為可吸收藍光並釋放出波長較藍光更長的可見光的螢光粉，且第三光線例如為白光。
第2圖繪示根據本發明一實施例之發光二極體燈具10。發光二極體燈具10包括一基板12、一如第1A-1D圖所示的發光二極體元件100以及一驅動電路14。發光二極體元件100設置於基板12上。驅動電路14電性連接發光二極體元件100，用以控制發光二極體元件100的開啟或關閉。在此雖以發光二極體元件100為例，但發光二極體燈具10並不受限於此，發光二極體燈具10可包括其他的發光二極體元件。另外，在一些實施例中，當複數個根據本發明實施例的發光二極體元件設置於基板12 上時，驅動電路14可用以驅動一或複數個發光二極體元件。
簡而言之，在根據本發明實施例的發光二極體元件及應用其之發光二極體燈具中，保護元件以任一邊均不平行或垂直於導線架之一延伸方向的方式設置。因此，可避免保護元件失效和成形良率下降的問題。
綜上所述，雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧發光二極體元件
110‧‧‧支架
112‧‧‧第一導線架
114‧‧‧第二導線架
112s1、114 s1‧‧‧裸露出的表面
112s2、114 s2‧‧‧被包覆的表面
120‧‧‧殼體
122‧‧‧容納部
130‧‧‧發光二極體晶片
140‧‧‧保護元件
D1‧‧‧第一方向

Claims (10)

  1. 一種發光二極體元件，包括：一支架，該支架具有彼此分離的(isolated)一第一導線架及一第二導線架，沿一第一方向延伸排列，其中該第一方向實質上平行於該第二導線架的一邊；一殼體，部分包覆該第一、第二導線架，且具有一裸露出部分該第一、第二導線架表面的容納部；一發光二極體晶片，設置在該容納部中該裸露的第一導線架表面，且分別電性連接該第一、第二導線架；以及一保護元件，設置於被該殼體包覆的該第二導線架表面，該保護元件並電性連接至該第一導線架，其中該保護元件在該第二導線架上的垂直投影，其任一邊均不平行也不垂直於該第一方向。
  2. 如申請專利範圍第1項所述之發光二極體元件，其中該保護元件在該第二導線架上的垂直投影的任一邊與該第一方向夾45°角或135°角。
  3. 如申請專利範圍第1項所述之發光二極體元件，其中該保護元件是一齊納二極體(Zener diode)。
  4. 如申請專利範圍第1項所述之發光二極體元件，其中該發光二極體晶片與該保護元件係反向並聯。
  5. 如申請專利範圍第4項所述之發光二極體元件，其中該保護元件係以一導電膠體固定於該第二導線架上，並打線連接至該第一導線架。
  6. 如申請專利範圍第1項所述之發光二極體元件，更包括一封裝膠體，填充於該容納部中並封裝(encapsulate)該發光二極體晶片。
  7. 如申請專利範圍第1項所述之發光二極體元件，該殼體與該封裝膠體是由熱固性或熱塑性材料所構成。
  8. 如申請專利範圍第7項所述之發光二極體元件，其中該封裝膠體內更包括有複數波長轉換體，可吸收部份該發光二極體晶片所發出之一第一光線，並轉換成一波長較長的第二光線，且該第一、第二光線混光成一第三光線。
  9. 如申請專利範圍第8項所述之發光二極體元件，其中發光二極體晶片為藍光發光二極體晶片，該些波長轉換體為可吸收藍光並釋放出波長較藍光更長的可見光的螢光粉，且該第三光線為白光。
  10. 一種發光二極體燈具，包括：一基板；一如申請專利範圍第1至9項中任一項所述的發光二極體元件，設置於該基板上；以及 一驅動電路，電性連接該發光二極體元件，用以控制該發光二極體元件的開啟或關閉。
TW103101994A 2014-01-20 2014-01-20 發光二極體元件及應用其之發光二極體燈具 TWI540771B (zh)

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