TWI539867B - Euv裝置及其操作方法 - Google Patents

Euv裝置及其操作方法 Download PDF

Info

Publication number
TWI539867B
TWI539867B TW101110364A TW101110364A TWI539867B TW I539867 B TWI539867 B TW I539867B TW 101110364 A TW101110364 A TW 101110364A TW 101110364 A TW101110364 A TW 101110364A TW I539867 B TWI539867 B TW I539867B
Authority
TW
Taiwan
Prior art keywords
waveform
droplets
orifice
droplet
euv
Prior art date
Application number
TW101110364A
Other languages
English (en)
Chinese (zh)
Other versions
TW201247033A (en
Inventor
奇拉格 雷吉言古魯
彼得 包姆加特
喬治Ｏ 維斯晨庫
Original Assignee
Ａｓｍｌ荷蘭公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ａｓｍｌ荷蘭公司 filed Critical Ａｓｍｌ荷蘭公司
Publication of TW201247033A publication Critical patent/TW201247033A/zh
Application granted granted Critical
Publication of TWI539867B publication Critical patent/TWI539867B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0023—Constructional details of the ejection system
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW101110364A 2011-05-13 2012-03-26 Euv裝置及其操作方法 TWI539867B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/107,804 US8513629B2 (en) 2011-05-13 2011-05-13 Droplet generator with actuator induced nozzle cleaning

Publications (2)

Publication Number Publication Date
TW201247033A TW201247033A (en) 2012-11-16
TWI539867B true TWI539867B (zh) 2016-06-21

Family

ID=47141260

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101110364A TWI539867B (zh) 2011-05-13 2012-03-26 Euv裝置及其操作方法

Country Status (6)

Country Link
US (1) US8513629B2 (enExample)
EP (1) EP2707099A4 (enExample)
JP (1) JP5863955B2 (enExample)
KR (2) KR102088905B1 (enExample)
TW (1) TWI539867B (enExample)
WO (1) WO2013077901A1 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8829477B2 (en) 2010-03-10 2014-09-09 Asml Netherlands B.V. Droplet generator with actuator induced nozzle cleaning
JP6081711B2 (ja) * 2011-09-23 2017-02-15 エーエスエムエル ネザーランズ ビー．ブイ． 放射源
US8816305B2 (en) * 2011-12-20 2014-08-26 Asml Netherlands B.V. Filter for material supply apparatus
JP6099241B2 (ja) * 2012-06-28 2017-03-22 ギガフォトン株式会社 ターゲット供給装置
TWI618453B (zh) * 2013-01-10 2018-03-11 Ａｓｍｌ荷蘭公司 用以調整雷射光束脈衝時序以調節極端紫外光劑量之方法及系統
JP6168797B2 (ja) * 2013-03-08 2017-07-26 ギガフォトン株式会社 極端紫外光生成装置
JP6151941B2 (ja) 2013-03-22 2017-06-21 ギガフォトン株式会社 ターゲット生成装置及び極端紫外光生成装置
WO2014189055A1 (ja) * 2013-05-21 2014-11-27 ギガフォトン株式会社 極端紫外光生成装置
US9497840B2 (en) 2013-09-26 2016-11-15 Asml Netherlands B.V. System and method for creating and utilizing dual laser curtains from a single laser in an LPP EUV light source
US9241395B2 (en) * 2013-09-26 2016-01-19 Asml Netherlands B.V. System and method for controlling droplet timing in an LPP EUV light source
WO2015111219A1 (ja) * 2014-01-27 2015-07-30 ギガフォトン株式会社 レーザ装置、及び極端紫外光生成システム
US9678431B2 (en) * 2015-03-16 2017-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. EUV lithography system and method with optimized throughput and stability
US9888554B2 (en) * 2016-01-21 2018-02-06 Asml Netherlands B.V. System, method and apparatus for target material debris cleaning of EUV vessel and EUV collector
WO2018069976A1 (ja) 2016-10-11 2018-04-19 ギガフォトン株式会社 ターゲット供給装置
TWI634391B (zh) * 2017-06-23 2018-09-01 台灣積體電路製造股份有限公司 噴嘴模組、微影裝置及其操作方法
US10824083B2 (en) * 2017-09-28 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Light source, EUV lithography system, and method for generating EUV radiation
TWI821231B (zh) * 2018-01-12 2023-11-11 荷蘭商Ａｓｍｌ荷蘭公司 用於控制在液滴串流中液滴聚結之裝置與方法
KR102746923B1 (ko) * 2018-03-28 2024-12-24 에이에스엠엘 네델란즈 비.브이. 액적 생성기 성능을 모니터링 및 제어하는 장치 및 방법
US10719020B2 (en) * 2018-06-29 2020-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Droplet generator and method of servicing extreme ultraviolet radiation source apparatus
US20200057376A1 (en) * 2018-08-14 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography system and lithography method
NL2023879A (en) 2018-09-26 2020-05-01 Asml Netherlands Bv Apparatus for and method of controlling introduction of euv target material into an euv chamber
TWI826559B (zh) 2018-10-29 2023-12-21 荷蘭商Ａｓｍｌ荷蘭公司 延長靶材輸送系統壽命之裝置及方法
WO2020163283A1 (en) * 2019-02-07 2020-08-13 University Of Washington Devices and systems for droplet generation and methods for generating droplets
KR102893635B1 (ko) * 2019-02-26 2025-11-28 에이에스엠엘 네델란즈 비.브이. 액적 생성기 성능을 제어하는 장치 및 방법
CN113812214B (zh) 2019-05-06 2025-09-09 Asml荷兰有限公司 用于控制液滴形成的装置和方法
KR20220119034A (ko) * 2019-12-20 2022-08-26 에이에스엠엘 네델란즈 비.브이. 소스 재료 전달 시스템, euv 방사선 시스템, 리소그래피 장치 및 그 방법
IL297926A (en) 2020-05-22 2023-01-01 Asml Netherlands Bv Hybrid droplet generator for extreme ultraviolet light sources in lithographic radiation systems
CN116601839A (zh) * 2020-12-16 2023-08-15 西默有限公司 根据准分子激光器的重复频率调制其波长的设备和方法
JP2024020968A (ja) * 2022-08-02 2024-02-15 ギガフォトン株式会社 極端紫外光生成装置、及び電子デバイスの製造方法
KR20250107826A (ko) 2022-11-16 2025-07-14 에이에스엠엘 네델란즈 비.브이. 액적 스트림 정렬 메커니즘 및 그 방법
CN116528448A (zh) * 2023-04-11 2023-08-01 广东省智能机器人研究院 均匀液滴产生装置及极紫外光源
CN116567903A (zh) * 2023-04-26 2023-08-08 中国科学院上海光学精密机械研究所 极紫外光刻光源产生稳定液滴靶的调控系统和方法
WO2025140805A1 (en) 2023-12-29 2025-07-03 Asml Netherlands B.V. Systems and methods of laser-to-droplet positioning with tilt range keep assist during extreme ultraviolet radiation generation
WO2025140811A1 (en) 2023-12-29 2025-07-03 Asml Netherlands B.V. Extreme ultraviolet light generation sequence for an extreme ultraviolet light source
WO2025153240A1 (en) 2024-01-16 2025-07-24 Asml Netherlands B.V. Gas flow reallocation in light source

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4600928A (en) * 1985-04-12 1986-07-15 Eastman Kodak Company Ink jet printing apparatus having ultrasonic print head cleaning system
US6831963B2 (en) * 2000-10-20 2004-12-14 University Of Central Florida EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions
US7843632B2 (en) 2006-08-16 2010-11-30 Cymer, Inc. EUV optics
US20060255298A1 (en) * 2005-02-25 2006-11-16 Cymer, Inc. Laser produced plasma EUV light source with pre-pulse
US7372056B2 (en) 2005-06-29 2008-05-13 Cymer, Inc. LPP EUV plasma source material target delivery system
US7405416B2 (en) * 2005-02-25 2008-07-29 Cymer, Inc. Method and apparatus for EUV plasma source target delivery
US7465946B2 (en) 2004-03-10 2008-12-16 Cymer, Inc. Alternative fuels for EUV light source
US7439530B2 (en) 2005-06-29 2008-10-21 Cymer, Inc. LPP EUV light source drive laser system
US7491954B2 (en) 2006-10-13 2009-02-17 Cymer, Inc. Drive laser delivery systems for EUV light source
US7378673B2 (en) 2005-02-25 2008-05-27 Cymer, Inc. Source material dispenser for EUV light source
US7897947B2 (en) 2007-07-13 2011-03-01 Cymer, Inc. Laser produced plasma EUV light source having a droplet stream produced using a modulated disturbance wave
US7087914B2 (en) 2004-03-17 2006-08-08 Cymer, Inc High repetition rate laser produced plasma EUV light source
US7164144B2 (en) 2004-03-10 2007-01-16 Cymer Inc. EUV light source
JP2005262525A (ja) * 2004-03-17 2005-09-29 Seiko Epson Corp 液体吐出ヘッドの駆動方法、インクジェットヘッドの駆動方法、及びインクジェットプリンタ
JP4564369B2 (ja) * 2005-02-04 2010-10-20 株式会社小松製作所 極端紫外光源装置
US8158960B2 (en) * 2007-07-13 2012-04-17 Cymer, Inc. Laser produced plasma EUV light source
JP5280066B2 (ja) * 2008-02-28 2013-09-04 ギガフォトン株式会社 極端紫外光源装置
US7872245B2 (en) 2008-03-17 2011-01-18 Cymer, Inc. Systems and methods for target material delivery in a laser produced plasma EUV light source
US8128196B2 (en) * 2008-12-12 2012-03-06 Eastman Kodak Company Thermal cleaning of individual jetting module nozzles
US8173985B2 (en) 2009-12-15 2012-05-08 Cymer, Inc. Beam transport system for extreme ultraviolet light source

Also Published As

Publication number Publication date
EP2707099A4 (en) 2014-12-17
JP5863955B2 (ja) 2016-02-17
EP2707099A1 (en) 2014-03-19
US20120286176A1 (en) 2012-11-15
KR101943528B1 (ko) 2019-01-29
WO2013077901A1 (en) 2013-05-30
JP2014519682A (ja) 2014-08-14
US8513629B2 (en) 2013-08-20
KR20190011820A (ko) 2019-02-07
KR102088905B1 (ko) 2020-03-16
KR20140041537A (ko) 2014-04-04
TW201247033A (en) 2012-11-16

Similar Documents

Publication Publication Date Title
TWI539867B (zh) Euv裝置及其操作方法
US8829477B2 (en) Droplet generator with actuator induced nozzle cleaning
EP2544766B1 (en) Laser produced plasma euv light source
TWI821231B (zh) 用於控制在液滴串流中液滴聚結之裝置與方法
EP2167193B1 (en) Laser produced plasma euv light source
KR102746923B1 (ko) 액적 생성기 성능을 모니터링 및 제어하는 장치 및 방법
CN112930714B (zh) 监测光发射

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees