TWI527874B - 各向異性導電膜、用於該各向異性導電膜之組成物及半導體元件 - Google Patents

各向異性導電膜、用於該各向異性導電膜之組成物及半導體元件 Download PDF

Info

Publication number
TWI527874B
TWI527874B TW102140691A TW102140691A TWI527874B TW I527874 B TWI527874 B TW I527874B TW 102140691 A TW102140691 A TW 102140691A TW 102140691 A TW102140691 A TW 102140691A TW I527874 B TWI527874 B TW I527874B
Authority
TW
Taiwan
Prior art keywords
anisotropic conductive
conductive film
composition
weight
solid content
Prior art date
Application number
TW102140691A
Other languages
English (en)
Other versions
TW201425521A (zh
Inventor
申炅勳
金奎峰
徐賢柱
申潁株
林佑俊
Original Assignee
第一毛織股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 第一毛織股份有限公司 filed Critical 第一毛織股份有限公司
Publication of TW201425521A publication Critical patent/TW201425521A/zh
Application granted granted Critical
Publication of TWI527874B publication Critical patent/TWI527874B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/275Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
    • H01L2224/27502Pre-existing or pre-deposited material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/278Post-treatment of the layer connector
    • H01L2224/2783Reworking, e.g. shaping
    • H01L2224/2784Reworking, e.g. shaping involving a mechanical process, e.g. planarising the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29075Plural core members
    • H01L2224/2908Plural core members being stacked
    • H01L2224/29082Two-layer arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H01L2224/29291The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311Tin [Sn] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29316Lead [Pb] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29324Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29364Palladium [Pd] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29366Titanium [Ti] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29371Chromium [Cr] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29386Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/2939Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29393Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/294Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material
    • H01L2224/2949Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29499Shape or distribution of the fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/8388Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83885Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/83855 - H01L2224/8388, e.g. for hybrid thermoplastic-thermosetting adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/201Temperature ranges
    • H01L2924/20104Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20Parameters
    • H01L2924/201Temperature ranges
    • H01L2924/20105Temperature range 150 C=<T<200 C, 423.15 K =< T < 473.15K

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Insulated Conductors (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Description

各向異性導電膜、用於該各向異性導電膜之組成物及半導體元件 發明領域
本發明係有關於一種用於各向異性導電膜的組成物及一種使用該組成物所製備的各向異性導電膜。
發明背景
一種各向異性導電膜為一種材料,於像是液晶顯示器、個人電腦、行動通信裝置,以及類似物的電子產品的製造期間,用於電氣連接小的電氣組件,例如半導體元件至基板,或是用於電氣連接基板彼此。
隨著近來朝著大面板及精細的互連線之趨勢,連接基板變得更薄,以及電路連接部件與晶片、多層陶瓷晶片(MLCC)、通孔或類似物,之間的距離減小,造成了嚴重的温度偏差(deviation)。此外,印刷電路板(PCB)的各圖案之熱散逸亦引起温度偏差。
一種傳統的各向異性導電膜具有改善的高溫特性來確保處理性,其係經由考慮到温度偏差。然而,於此情況中,很可能會因為PCB之收縮/膨脹而遭受經歷接合失 敗或未對準的問題,以及由於在高溫下使用接合設備而會有關於設備管理的問題。舉例而言,韓國專利案號0727741揭示一種快速固化的各向異性導電黏著劑,其能夠使黏著強度隨著時間的降低及連接電阻隨著時間的增加率減到最小,同時改善流動性和可靠度。然而,此各向異性導電黏著劑係使用作為180℃或更高的高溫接合之黏著劑,以及因而可能會經歷接合失敗或有關設備管理的問題。
此外,甚至在盡可能增高接合設備可利用的温度的情況中,接合設備有時仍無法依照PCB的種類而獲得所欲的接合温度。
為了解決此等像是因為高溫接合所致之接合失敗和未對準的問題,需要一種各向異性導電膜,其能夠於低溫接合(例如,於大約130℃之接合溫度)。
發明概要
本發明的一個態樣要提供一種各向異性導電膜及組成物,其能夠在低溫接合以解決因為高溫接合所致之接合失敗、未對準,以及有關設備管理的問題。
本發明的一個態樣提供一種各向異性導電膜,其1)於該膜固化後、於40℃具有100MPa至300MPa之儲存模數,以及2)於該膜的DSC(示差掃瞄熱量分析儀)剖面圖內具有80℃至90℃之尖峰。
本發明的另一個態樣要提供一種用於各向異性導電膜之組成物,其包括(A)一種熱塑性樹脂;(B)一種第一 可自由基聚合性材料;(C)一種第二可自由基聚合性材料;(D)矽石;(E)一種有機過氧化物;以及(F)導電粒子,其中根據該(B)第一可自由基聚合性材料的固體含量重量及該(C)第二可自由基聚合性材料的固體含量重量之總和(B+C),對於該(A)熱塑性樹脂的固體含量重量及該(D)矽石的固體含量重量之總和(A+D),之比率(B+C)/(A+D)範圍由0.20至0.45。
本發明的還另一個態樣提供一種半導體元件,其包含:一種具有第一電極的第一連接構件;一種具有第二電極的第二連接構件;以及該各向異性導電膜或由該組成物製備的各向異性導電膜,該各向異性導電膜放置在該第一連接構件和該第二連接構件之間且連接該第一電極和該第二電極。
當依據本發明的具體例之各向異性導電膜或組成物放置在第一連接構件和第二連接構件之間且接受主要壓縮時,於120℃至200℃很大範圍的接合溫度內展現出色的黏著性和連接可靠度。
此外,依據本發明之具體例的各向異性導電膜或組成物即使在可靠度測試之後,仍具有低的黏著強度降低率及低的連接電阻增加率。
10‧‧‧各向異性導電膜
40‧‧‧導電粒子
50‧‧‧第一連接構件
60‧‧‧第二連接構件
70‧‧‧第一電極
80‧‧‧第二電極
圖1為描繪依據本發明之具體例的膜,取決於溫度之儲存模數之變化(variation)的圖。
圖2顯示依據本發明之具體例的膜之DSC剖面圖。
圖3為依據本發明之具體例的半導體元件的截面圖,其包括第一和第二連接構件50、60,其等經由如一個具體例的各向異性導電黏著劑膜而互相連接,且各別包括第一電極和第二電極70、80。於此,當壓縮位於具有該第一電極70的該第一連接構件50及具有該第二電極80的該第二連接構件60之間的該各向異性導電黏著劑膜時,該第一電極70和該第二電極80經由各向異性導電黏著劑膜內的導電粒子40而互相連接。
較佳實施例之詳細說明
本發明的一個具體例提供一種各向異性導電膜,其1)於該膜固化後、於40℃具有100MPa至300MPa之儲存模數,以及2)於該膜的DSC(示差掃瞄熱量分析儀)剖面圖內具有80℃至90℃之尖峰。
儲存模數可以在該各向異性導電膜固化之後、於40℃下予以測量,以及固化可以舉例而言,藉由將該各向異性導電膜放置於熱壓機上,且在30MPa的負載下、於190℃加熱該膜歷時15分鐘而達成。儲存模數可以使用本技藝已知的任何儀器予以測量,舉例而言一種DMA(動態機械分析儀)(TA Instruments)。
一種典型的各向異性導電膜於固化後、於40℃具有400MPa至2000MPa之儲存模數。然而,設若各向異性導電膜之儲存模數超過300MPa,則各向異性導電膜於固化後展現強大的內聚力,從而造成互連基板和晶片之間的 介面處之黏著性劣化。此外,因為黏結劑系統顯著地影響儲存模數之增加,具有高儲存模數之各向異性導電膜,由於黏結劑系統的高硬度和玻璃轉移溫度,而無法於低溫製程中展現出足夠的流動性。設若該膜之儲存模數小於100MPa,則固化後的長期耐久性方面會有問題。因而,當各向異性導電膜於該膜固化後、於40℃具有100MPa至300MPa之儲存模數時,有可能確保各向異性導電膜和互連基板或晶片之間良好的初始黏著性及連接可靠度,以及有可能確保低溫製程中的流動性。於40℃之儲存模數係透過實質於40℃的溫度且誤差邊際±2℃的情況下,也就是說40℃±2℃的溫度範圍內,較佳於40℃±1℃的溫度範圍內,測量該膜的儲存模數而獲得。於是,舉例而言,一種於38℃具有100MPa至300MPa之儲存模數的各向異性導電膜也落在本發明之範疇內。
此外,依據該具體例之各向異性導電膜於該膜的DSC(示差掃瞄熱量分析儀)剖面圖內具有80℃至90℃之尖峰。當使用於本文中,「DSC剖面圖內之尖峰」一詞係指各向異性導電膜於DSC剖面圖內具有最大熱通量的溫度。設若於DSC剖面圖內該膜之尖峰小於80℃,可容許該膜在低溫接合,但是很可能會經歷、按照製程、由於預先固化所致之接合失敗。設若於DSC剖面圖內該膜之尖峰大於90℃,該膜會無法達到充分的固化來展現其於低溫固化之特徵。
於此發明中,該各向異性導電膜具有120℃至 200℃的主要壓縮溫度,較佳為130℃至190℃。依據本發明之各向異性導電膜容許主要壓縮於上述廣大的溫度範圍內進行,藉此達到低溫下或是高溫下快速固化。主要壓縮可以在2.0Mpa至6.0MPa的負載歷時約3~7秒,較佳在大約3.0Mpa至大約5.0MPa的負載歷時約3~6秒,於120℃至200℃的溫度下執行。
本發明之各向異性導電膜可以有利地用來接合覆晶軟板(chip-on-flex)(COF)、積體電路(IC)或類似物至印刷電路(PCB)板或是可撓性印刷電路板(FPCB),不限於該等。
依據本發明,該各向異性導電膜可以包括:(A)一種熱塑性樹脂;(B)一種第一可自由基聚合性材料;(C)一種第二可自由基聚合性材料;及(D)矽石,其中根據該(B)第一可自由基聚合性材料的固體含量重量及該(C)第二可自由基聚合性材料的固體含量重量之總和(B+C),對於該(A)熱塑性樹脂的固體含量重量及該(D)矽石的固體含量重量之總和(A+D),之比率(B+C)/(A+D)範圍由0.20至0.45。該熱塑性樹脂可包括選自於以下所構成的群組之至少一者:丙烯腈丁二烯共聚物、丙烯酸酯改質之胺甲酸乙酯樹脂,以及丙烯酸(acryl)共聚物。當比率(B+C)/(A+D)範圍由0.20至0.45時,可以確保該各向異性導電膜於低溫製程中足夠的流動性以及固化後的長期可靠度。該各向異性導電膜可以進一步包括有機過氧化物及導電粒子。該各向異性導電膜可以進一步包括二氧化鈦。
本發明的另一個具體例提供一種用於各向異性 導電膜之組成物,其包括(A)一種熱塑性樹脂;(B)一種第一可自由基聚合性材料;(C)一種第二可自由基聚合性材料;(D)矽石;(E)一種有機過氧化物;以及(F)導電粒子,其中根據該(B)第一可自由基聚合性材料的固體含量重量及該(C)第二可自由基聚合性材料的固體含量重量之總和(B+C),對於該(A)熱塑性樹脂的固體含量重量及該(D)矽石的固體含量重量之總和(A+D),之比率(B+C)/(A+D)範圍由0.20至0.45。
當比率(B+C)/(A+D)範圍由0.20至0.45時,可以確保該組成物於低溫製程中足夠的流動性以及固化後的長期可靠度。
該熱塑性樹脂可包括選自於以下所構成的群組之至少一者:丙烯腈丁二烯共聚物、丙烯酸酯改質之胺甲酸乙酯樹脂,以及丙烯酸共聚物。
該組成物可包括就固體含量而言,8重量%(wt%)至20wt%的丙烯酸共聚物。該組成物可包括就固體含量而言,3wt%至8wt%的矽石。
該組成物可以進一步包括二氧化鈦。
本發明之一個另外的具體例提供一種半導體元件,其包括:一種具有第一電極的第一連接構件;一種具有第二電極的第二連接構件;以及依據本發明之各向異性導電黏著劑膜,其放置在該第一連接構件和該第二連接構件之間且電氣連接該第一電極和該第二電極。
參見圖3,依據本發明之具體例的半導體元件包 括一種具有第一電極70的第一連接構件50;一種具有第二電極80的第二連接構件60;以及含括導電粒子40的各向異性導電膜10。當壓縮放置在該具有第一電極70的第一連接構件50和該具有第二電極80的第二連接構件60之間的該各向異性導電膜10時,該第一電極70和該第二電極80經由導電粒子40而互相連接。於一個具體例中,該第一連接構件和該第二連接構件在材料、厚度、尺寸和相互連結性(interconnectivity)方面,可以具有相似的結構。該第一連接構件和該第二連接構件可以具有大約20μm至100μm的厚度。於另一個具體例中,該第一連接構件和該第二連接構件在材料、厚度、尺寸和相互連結性方面,可以具有不同的結構與功能。該第一連接構件或該第二連接構件可以由玻璃、PCB(印刷電路板)、fPCB、COF、TCP、ITO玻璃以及類似物所形成,不限於該等。該第一電極或第二電極可以為凸起式電極或平坦式電極。當該第一電極和第二電極為凸起式電極時,此等電極具有大約2.50μm至大約10μm的高度(H)、大約50μm至大約120μm的寬度(W),以及大約50μm至大約110μm的間隙(G)在電極之間。較佳地,該等電極具有大約2.50μm至大約9μm的高度(H)、大約50μm至大約100μm的寬度(W),以及大約60μm至大約90μm的間隙(G)。
當該第一電極及第二電極為平坦式電極時,此等電極具有大約500Å至大約1200Å的厚度。
該第一電極或第二電極可以由ITO、銅、矽、IZO 以及類似物形成,不限於該等。
較佳地,平坦式電極具有800Å至1200Å的厚度,以及凸起式電極具有6μm至10μm的高度。於此事例中,在絕緣層具有4μm至12μm的厚度時,黏著劑膜能展現出足夠的黏著性。更佳地,平坦式電極具有1000Å的厚度,以及凸起式電極具有8μm的高度。於此事例中,絕緣層具有6μm至10μm的厚度。
本發明之再另一個具體例提供了一種製造半導體元件的方法,其包括:將各向異性導電膜放置在一種具有第一電極的第一連接構件上,接著進行預壓縮;以及放置一種具有第二電極的第二連接(connecting)在該經預壓縮的各向異性導電膜之上,接著進行主要壓縮;其中該各向異性導電膜1)於該膜固化後、於40℃具有100MPa至300MPa之儲存模數,以及2)於該膜的DSC(示差掃瞄熱量分析儀)剖面圖內具有80℃至90℃之尖峰。預壓縮可以在1.0Mpa至5.0MPa的負載,於大約30℃至大約70℃的溫度下執行歷時1~5秒,以及主要壓縮可以在2.0Mpa至6.0MPa的負載、於120℃至200℃的溫度下執行歷時3~7秒。
接著,依據本發明之各向異性導電黏著劑組成物的各別組份將予以更詳盡地說明。
(A)熱塑性樹脂
熱塑性樹脂係作用為形成該各向異性導電黏著劑膜之基質的黏結劑系統,以及可以包括由典型的熱塑性樹脂之中所選擇的至少一者。舉例而言,熱塑性樹脂可以 包括由以下之中所選擇的至少一者:聚胺甲酸乙酯、丙烯腈、丙烯酸(acryl)、丁二烯、聚醯胺、烯烴以及矽氧樹脂。較佳地,熱塑性樹脂係選自於聚胺甲酸乙酯、丙烯酸(acrylic)以及丁二烯樹脂之中。更佳地,熱塑性樹脂係選自於丙烯酸酯改質之胺甲酸乙酯樹脂、丙烯腈丁二烯共聚物,以及丙烯酸共聚物中的至少一者。
特別地,依據本發明之各向異性導電黏著劑組成物可以包括一種丙烯酸酯改質之胺甲酸乙酯樹脂,就流動性和黏著性而言係作為熱塑性樹脂組分。於此,就固體含量而言,該丙烯酸酯改質之胺甲酸乙酯樹脂可以以20wt%至60wt%的量存在於該各向異性導電黏著劑組成物內。較佳地,就固體含量而言,該丙烯酸酯改質之胺甲酸乙酯樹脂可以以25wt%至55wt%的量存在於該各向異性導電黏著劑組成物內。
丙烯酸酯改質之胺甲酸乙酯樹脂具有低的玻璃轉移溫度作為黏結劑系統,藉此改善流動性且容許分子鏈內的胺甲酸乙酯基團展現出高的黏著性。特別地,當使用於各向異性導電膜時,丙烯酸酯改質之胺甲酸乙酯樹脂可以藉由改善固化性能而降低連接製程的溫度。
丙烯酸酯改質之胺甲酸乙酯樹脂之實例可以包括二異氰酸酯、多元醇、二醇,以及丙烯酸酯,而不限於該等。
二異氰酸酯可以包括芳香族、脂肪族及脂環族二異氰酸酯,以及其等之組合。特別地,二異氰酸酯可以為 選自於以下所構成的群組之至少一者:四亞甲基-1,4-二異氰酸酯、六亞甲基-1,6-二異氰酸酯、伸環己基-1,4-二異氰酸酯、亞甲基雙(4-環己基異氰酸酯)、異佛酮二異氰酸酯、4-4亞甲基雙(環己基二異氰酸酯),以及其等之混合物。
多元醇可以為聚酯多元醇、聚醚多元醇、聚碳酸酯多元醇,和類似物,其具有二個或更多個羥基於分子鏈內。聚酯多元醇可以經由二甲酸化合物和二醇化合物的縮合來獲得。於此,二甲酸化合物之實例可以包括琥珀酸、戊二酸、異酞酸、己二酸、辛二酸、壬二酸、癸二酸、十二烷二甲酸、六氫酞酸、異酞酸、對酞酸、鄰苯二甲酸、四氯酞酸、1,5-萘二甲酸、反丁烯二酸、順丁烯二酸、衣康酸、檸康酸、中康酸、四氫酞酸,以及類似物。二醇化合物之實例可以包括乙二醇、丙二醇、1,3-丙二醇、1,3-丁二醇、1,4-丁二醇、1,5-戊二醇、1,6-己二醇、新戊二醇、二乙二醇、二丙二醇、三乙二醇、四乙二醇、二丁二醇、2-甲基-1,3-戊二醇、2,2,4-三甲基-1,3-戊二醇、1,4-環己烷二甲醇,以及類似物。聚醚多元醇之實例可以包括聚乙二醇、聚丙二醇、聚四乙二醇,以及類似物。聚醚多元醇可以具有範圍落在400g/mol至10,000g/mol之重量平均分子量,較佳為400g/mol至3,000g/mol之重量平均分子量。聚碳酸酯多元醇可以包括聚亞烷基碳酸酯(polyalkylene carbonate)和矽衍生的聚碳酸酯,以及類似物。
二醇之實例包括1,3-丙二醇、1,3-丁二醇、1,4-丁二醇、1,5-戊二醇、1,6-己二醇、新戊二醇、二乙二醇、 二丙二醇、三乙二醇、四乙二醇、二丁二醇、2-甲基-1,3-戊二醇、2,2,4-三甲基-1,3-戊二醇、1,4-環己烷二甲醇,以及類似物。
丙烯酸酯可以包括羥基丙烯酸酯或是胺基丙烯酸酯。
丙烯酸酯改質之胺甲酸乙酯樹脂可以經由前述的四種組份之聚加成聚合作用來製備,譬如二異氰酸酯基團(NCO)對羥基基團(OH)的莫耳比(NCO/OH)範圍落在1.04至1.6,以及多元醇係以70wt%或更少的量存在,以排除丙烯酸酯之三種組份的總量為基準,接著使羥基丙烯酸酯或胺基丙烯酸酯與所製備的胺甲酸乙酯樹脂之任一末端的二異氰酸酯,以0.1至2.1的莫耳比來反應。此外,剩餘的異氰酸酯基團可以與醇反應,來生產最終的丙烯酸酯改質之胺甲酸乙酯樹脂。於此,聚加成聚合作用可以藉由本技藝中已知的任何典型的聚加成聚合方法來執行。於此,聚加成聚合作用可以使用錫基的催化劑、於90℃的反應溫度和1atm的反應壓力下實施歷時5小時,不限於該等。
丙烯酸酯改質之胺甲酸乙酯樹脂展現二個玻璃轉移溫度(Tg),二個玻璃轉移溫度之至少一者可以為0℃或更大。
也就是說,丙烯酸酯改質之胺甲酸乙酯樹脂作用為黏結劑系統,其係藉由作為軟區段的多元醇和作為硬區段的二異氰酸酯之相混合作用來獲得,以及具有0℃或更大的單一玻璃轉移溫度,或是二個玻璃轉移溫度,其之至少 一者可以為0℃或更大,以允許膜於室溫下形成。此外,丙烯酸酯改質之胺甲酸乙酯樹脂經由末端的丙烯酸酯基團而作用為固化系統,其允許與丙烯酸於固化系統內一起進行固化反應,藉此提供出色的黏著強度和高度的連接可靠度。
丙烯酸酯改質之胺甲酸乙酯樹脂可以具有1,000g/mol至100,000g/mol的重量平均分子量,較佳為10,000g/mol至50,000g/mol的重量平均分子量。
於一些具體例中,可以使用丙烯酸(acrylic)共聚物作為熱塑性樹脂。
於一些具體例中,丙烯酸(acrylic)共聚物可以經由丙烯酸(acryl)單體之聚合作用來製備,例如:乙基、甲基、丙基、丁基、己基、氧基(oxyl)、十二基、丙烯酸月桂酯、甲基丙烯酸酯、其之改質的丙烯酸酯;丙烯酸、甲基丙烯酸、甲基丙烯酸甲酯、乙酸乙烯酯、其之改質的丙烯酸單體,與類似物,不限於該等。丙烯酸(acrylic)共聚物可以具有50℃至120℃的玻璃轉移溫度(Tg)。玻璃轉移溫度於此範圍內,該組成物具有出色的連接可靠度且允許有效的膜成形性。
再者,丙烯酸(acrylic)共聚物實質上含有羥基或羧基以具有1mgKOH/g至100mgKOH/g的酸價,以及選擇性地進一步含有環氧基或烷基。於此範圍之內,黏著劑組成物能夠展現足夠的黏著性,同時能確保出色的連接可靠度。
特別地,丙烯酸(acrylic)共聚物可以具有90℃的玻璃轉移溫度及3.4mgKOH/g的酸價,俾以實現強的膜特 性,以及可以僅僅作用為黏結劑。由於胺甲酸乙酯黏結劑具有相當低的玻璃轉移溫度,使用丙烯酸(acrylic)共聚物作為黏結劑的就連接可靠度而言會提供更多好處,因丙烯酸(acrylic)共聚物的玻璃轉移溫度會增加。然而,具有過高的玻璃轉移溫度之丙烯酸(acrylic)共聚物是易碎的,從而不容易達到有效的膜成形性。
丙烯酸(acrylic)共聚物可以以8wt%至20wt%的量,較佳為10wt%至18wt%的量,存在於該組成物內。
於一些具體例中,可以使用丙烯腈丁二烯共聚物作為熱塑性樹脂。
丙烯腈丁二烯共聚物之實例可以包括(甲基)丙烯酸酯-丁二烯共聚物、(甲基)丙烯酸酯-丙烯腈-丁二烯-苯乙烯共聚物、羧基改質的丙烯腈-丁二烯共聚物,以及類似物,而不限於該等。此等可以單獨或是以其等之混合物來使用。較佳地,熱塑性樹脂為羧基改質的丙烯腈-丁二烯橡膠,其能夠改良樹脂混合物的安定性、由於極性增加而來的黏著性、耐濕性、耐熱性,以及類似物。
於一具體例中,熱塑性樹脂為羧基改質的丙烯腈-丁二烯橡膠,其具有2,000g/mol至200,000g/mol的重量平均分子量,較佳為3,000g/mol至200,000g/mol的重量平均分子量。於此事例中,丙烯腈-丁二烯橡膠含有10wt%至60wt%的丙烯腈,較佳為20wt%至50wt%的丙烯腈,以及1wt%至20wt%的羧基。
丙烯腈丁二烯共聚物可以以1wt%至10wt%的 量,較佳為2wt%至8wt%的量,存在於該組成物內。於此範圍之內,該組成物不會發生相分離以及會確保良好的連接可靠度。
於各向異性導電膜的組成物方面,就固體含量而言,以該膜的組成物之總重量為基準,熱塑性樹脂可以以50wt%至80wt%的量存在,較佳為55wt%至77wt%的量存在。
(B)可自由基聚合性材料1
可自由基聚合性材料1為固化系統的組份,以及作用為確保彼此接合的層之間的黏著性,且確保因自由基固化反應而來的連接可靠度。
可自由基聚合性材料1含有至少一個乙烯基,以及包括丙烯酸酯、甲基丙烯酸酯,和馬來亞醯胺化合物,其等可以以單體形式、寡聚體形式,或是其等之組合來使用。丙烯酸酯(甲基丙烯酸酯)之實例可以包括丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丙酯、4-羥基丁基丙烯酸酯、丙烯酸異丁酯、二丙烯酸乙二醇酯、二丙烯酸二乙二醇酯、三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙烯酸酯、2-羥基-1,3-二丙烯酸氧丙烷(2-hydroxy-1,3-diacryloxypropane)、2,2-雙[4-(丙烯氧聚甲氧基)苯基]丙烷、2,2-雙[4-(丙烯氧聚乙氧基)苯基]丙烷、二環戊烯基丙烯酸酯、三環癸基丙烯酸酯、參(丙烯醯氧乙基)三聚異氰酸酯,以及類似物,不限於該等。此等可以單獨或是以其等之組合來使用。
於組成物方面,就固體含量而言,以該組成物的總重量為基準,可自由基聚合性材料1係以大約2wt%至大約15wt%的量存在,較佳為大約4wt%至大約12wt%的量存在。
(C)可自由基聚合性材料2
可自由基聚合性材料2亦為固化系統的組份,以及作用為確保彼此接合的層之間的黏著性,且可以確保因自由基固化反應和可自由基聚合性材料2而來的連接可靠度。
可自由基聚合性材料2含有至少一個乙烯基基團於分子內,以及包括丙烯酸酯、甲基丙烯酸酯,和馬來亞醯胺化合物,其等可以以單體形式、寡聚體形式,或是其等之組合來使用。可自由基聚合性材料2和可自由基聚合性材料1是不相同的。可自由基聚合性材料2之實例可以包括1,6-己二醇單(甲基)丙烯酸酯、2-羥乙基(甲基)丙烯酸酯、2-羥丙基(甲基)丙烯酸酯、2-羥丁基(甲基)丙烯酸酯、2-羥基-3-苯氧基丙基(甲基)丙烯酸酯、1,4-丁二醇(甲基)丙烯酸酯、2-羥基烷基(甲基)丙烯醯磷酸酯、4-羥基環己基(甲基)丙烯酸酯、新戊二醇單(甲基)丙烯酸酯、三羥甲基乙烷二(甲基)丙烯酸酯、三羥甲基丙烷二(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、季戊四醇六(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、甘油二(甲基)丙烯酸酯、t-氫呋喃甲基(甲基)丙烯酸酯(t-hyrdofurfuryl(meth)acrylate)、異癸基(甲基)丙烯酸酯、2-(2-乙氧基乙氧基)乙基(甲基)丙烯酸酯、硬脂醯 (甲基)丙烯酸酯、月桂基(甲基)丙烯酸酯、2-苯氧乙基(甲基)丙烯酸酯、異基(甲基)丙烯酸酯、十三基(甲基)丙烯酸酯、乙氧化壬基酚(甲基)丙烯酸酯、乙二醇二(甲基)丙烯酸酯、二乙二醇二(甲基)丙烯酸酯、三乙二醇二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、1,3-丁二醇二(甲基)丙烯酸酯、三丙二醇二(甲基)丙烯酸酯、乙氧化雙酚-A二(甲基)丙烯酸酯、環己烷二甲醇二(甲基)丙烯酸酯、苯氧基-t-二醇(甲基)丙烯酸酯、2-甲基丙烯醯氧乙基磷酸酯、二(羥甲)三環癸烷二(甲基)丙烯酸酯、三羥甲基丙烷苯甲酸酯丙烯酸酯、茀(甲基)丙烯酸酯、酸磷氧乙基(甲基)丙烯酸酯(acid phosphoxyethyl(meth)acrylate),以及類似物,不限於該等。
於組成物方面,就固體含量而言,以該組成物的總重量為基準,可自由基聚合性材料2可以以大約2wt%至大約15wt%的量存在,較佳為大約4wt%至大約12wt%。於此可自由基聚合性材料2含量範圍之內,該組成物在可靠度方面展現出色的性質和全面的流動性,以及能防止主要壓縮之後連接可靠度的增加。
(D)矽石
於組成物方面,就固體含量而言,以該組成物的總重量為基準,矽石可以以大約3wt%至大約8wt%的量存在。於此矽石含量範圍內,該組成物能容許樹脂排除率有效的調整,以及透過增加儲存模數至預定或更高的位準來改善可靠度。此外,該各向異性導電黏著劑膜具有良好 的起始壓痕性質以及因而能展現電氣特徵。再者,當矽石具有範圍由1nm至30nm之粒徑時,矽石會提供該膜搖變減黏的特性,以及能控制預壓縮和主要壓縮之流動性。較佳地,該組成物含有燻矽石。
(E)有機過氧化物
有機過氧化物作用為在加熱或是暴露至光線後會產生自由基之固化劑。
考慮到高連接溫度、時間,及保存安定性,有機過氧化物可以選自於過氧化酮、過氧化縮酮、氫過氧化物、二烷基過氧化物、二醯基過氧化物、過氧化酯、過氧化碳酸酯,或是其等之組合之中,不限於該等。
此等有機過氧化物之實例包括過月桂酸三級丁酯、1,1,3,3-t-甲基丁基過氧-2-乙基己酸酯、2,5-二甲基-2,5-二(2-乙基己醯基過氧)己烷、1-環己基-1-甲基乙基過氧-2-乙基己酸酯、2,5-二甲基-2,5-二(間-甲苯甲醯基過氧)己烷、三級丁基過氧異丙基碳酸酯、三級丁基過氧-2-乙基己基碳酸酯、三級己基過氧苯甲酸酯、三級丁基過氧乙酸酯、雙異苯丙基過氧化物、2,5,-二甲基-2,5-二(三級丁基過氧)己烷、三級丁基異苯丙基過氧化物、三級己基過氧新癸酸酯、三級己基過氧-2-乙基己酸酯、三級丁基過氧-2-乙基己酸酯、三級丁基過氧異丁酸酯、1,1-雙(三級丁基過氧)環己烷、三級己基過氧異丙基碳酸酯、三級丁基過氧-3,5,5-三甲基己酸酯、三級丁基過氧三甲基乙酸酯、異丙苯基過氧新癸酸酯、氫過氧化二異丙苯、氫過氧化異丙苯 (cumen hydroperoxide)、過氧化異丁基、2,4-二氯苯甲醯過氧化物、3,5,5-三甲基己醯基過氧化物、過氧化辛醯基、過氧化月桂醯、過氧化硬脂醯、過氧化琥珀酸(succinic peroxide)、過氧化苯甲醯、3,5,5-三甲基己醯基過氧化物、苯甲醯基過氧化甲苯、1,1,3,3-四甲基丁基過氧新癸酸酯、1-環己基-1-甲基乙基過氧新癸酸酯、過氧二碳酸二正丙酯、過氧碳酸二異丙酯、雙(4-三級丁基環己基)過氧二碳酸酯、過氧二碳酸二-2-乙氧基甲氧酯、二(2-乙基己基過氧)二碳酸酯、過氧二碳酸二甲氧基丁酯、二(3-甲基-3-甲氧基丁基過氧)二碳酸酯、1,1-雙(三級己基過氧)-3,3,5-三甲基環己烷、1,1-雙(三級己基過氧)環己烷、1,1-雙(三級丁基過氧)-3,3,5-三甲基環己烷、1,1-(三級丁基過氧)環十二烷、2,2-雙(三級丁基過氧)癸烷、三級丁基三甲基矽基過氧化物、雙(三級丁基)二甲基矽基過氧化物、三級丁基三烯丙基矽基過氧化物、雙(三級丁基)二烯丙基矽基過氧化物、參(三級丁基)芳基矽基過氧化物,以及類似物,不限於該等。
有機過氧化物較佳於40℃至100℃具有為5至15小時的半生期。有機過氧化物的半生期於此範圍之內,該組成物不會受到任何室溫儲存的問題困擾,以及適用於快速固化。
於組成物方面,有機過氧化物係以1wt%至8wt%,較佳為1.5wt%至5wt%的量存在。於此有機過氧化物含量範圍之內,該組成物展現出色的壓縮特徵及重加工 性,以及不會受氣泡產生的困擾。
(F)導電粒子
該各向異性導電黏著劑組成物包括導電粒子,俾以改善電路連接之傳導性。
導電粒子可以為選自於以下的至少一類型:金屬顆粒,包括Au、Ag、Ni、Cu、Pd、Al、Cr、Sn、Ti,及Pb之至少一者;碳顆粒;樹脂顆粒,包括苯胍(benzoguanamine)、聚乙烯、聚酯、聚苯乙烯和聚乙烯醇,或是被電鍍金屬或被塗覆金屬之經修飾的樹脂;以及藉由進一步塗覆絕緣顆粒於塗覆金屬的聚合物樹脂顆粒上而獲得之經絕緣的導電粒子。
導電粒子的尺寸可以依據想要的應用、視要使用的電路間距來決定,以及範圍落在0.1μm至30μm之內。較佳地,導電粒子具有0.5μm至15μm的粒徑。
導電粒子可以以1wt%至10重量%的量存在。於此範圍之內,導電粒子可以保留固有的傳導性同時維持絕緣性質。導電粒子較佳以2wt%至8wt%的量存在,更佳為3wt%至6wt%的量存在。
依據本發明之各向異性導電黏著劑組成物可以進一步包括添加劑,例如聚合化抑制劑、抗氧化劑、熱安定劑以及類似物,俾以提供額外的性質而不會劣化基本的性質。就固體含量而言,添加劑可以以0.01wt%至10wt%的量存在於該組成物內,不限於該等。
聚合化抑制劑可以選自於以下所構成的群組: 羥醌、羥醌單甲醚、對苯醌、啡噻,以及其等之混合物。抗氧化劑可以為酚或是羥基桂皮酸酯材料。舉例而言,抗氧化劑可以為肆-(亞甲基-(3,5-二-第三丁基-4-羥基桂皮酸酯)甲烷、3,5-雙(1,1-二甲基乙基)-4-羥基-苯丙酸硫二-2,1-乙二基酯,以及類似物。
本發明提供一種使用本發明之各向異性導電黏著劑組成物所製備的各向異性導電黏著劑膜。形成該各向異性導電膜不需要特定的裝置或者設備。舉例而言,該各向異性導電膜可以藉由以下方式來獲得:將該各向異性導電黏著劑組成物溶解於一種有機溶劑(如甲苯)之內,以不會造成導電粒子粉碎的速率來攪拌該混合物歷時某時間期間,塗敷適當厚度(舉例而言,10μm至50μm)的該混合物至一脫模膜之上,以及乾燥該混合物歷時足夠的時間以使甲苯揮發。
接著,本發明將參照一些實施例予以更詳盡地解釋。應該了解到此等實施例僅僅為了闡釋目的而提供以及無論如何不解釋為限制本發明。
為了清楚之故,將省略對熟悉此藝者而言為顯而易見的細節。
實施例 實施例1至3:各向異性導電組成物及膜之製備
一種丙烯腈丁二烯共聚物、丙烯酸酯改質之胺甲酸乙酯樹脂1和2、丙烯酸共聚物、可自由基聚合性材料1和2、有機過氧化物、二氧化鈦、矽石以及導電粒子係以表1 內列出的量來摻和,接著使用行星式混合器於25℃攪拌歷時60分鐘,同時避免導電粒子粉碎。將形成的材料塗覆於已接受矽脫模(release)表面處理之聚乙烯為基的膜上,來形成35um厚的膜。使用鑄刀來形成膜,該膜又於60℃下乾燥歷時5分鐘,藉此製備實施例1至3之各個各向異性導電膜。
比較實施例1-4:各向異性導電組成物及膜之製備
各向異性導電膜係以如同實施例中相同的方式予以製備,除了組份的量係如同表1中顯示的。
於此等實施例及比較實施例方面,表1內顯示各別組分添加的量。
A=1)+2)+3)+4),D=9),B=5),C=6)
1)丙烯腈丁二烯共聚物:丙烯腈丁二烯共聚物(1072CGX,Zeon Chemical Co.,Ltd.)溶解於甲苯/甲基乙基酮內至25vol%(體積%)
2)丙烯酸酯改質之胺甲酸乙酯樹脂1:使用二丁基二月桂酸錫作為催化劑,於以下條件下進行聚加成聚合作用來製備聚胺甲酸乙酯樹脂(重量平均分子量:25,000g/mol):60wt%的多元醇及莫耳比為0.5的羥基甲基丙烯酸酯/異氰酸酯、溶解於甲基乙基酮內達50vol%、於90℃和1atm下歷時5小時
3)丙烯酸酯改質之胺甲酸乙酯樹脂2:使用二丁基二月桂酸錫作為催化劑,於以下條件下進行聚加成聚合作用來製備聚胺甲酸乙酯樹脂(重量平均分子量:28,000g/mol):60wt%的多元醇及莫耳比為1的羥基丙烯酸酯對異氰酸酯、溶解於甲基乙基酮內達50vol%、於90℃和1atm下歷時5小時
4)丙烯酸共聚物:溶解於甲苯/甲基乙基酮內達45vol%且具有90,000~120,000的重量平均分子量之丙烯酸樹脂(AOF7003,Aekyung Chemical Co.,Ltd.)
5)可自由基聚合性材料1:4-羥丁基丙烯酸酯
6)可自由基聚合性材料2:四氫呋喃甲基丙烯酸酯
7)有機過氧化物:過氧化月桂醯
8)二氧化鈦:TiO2
9)導電粒子:具有5μm的粒度之導電粒子
10)矽石:燻矽石
實驗實施例:40℃之儲存模數、起始的黏著強度、起始的連接電阻,以及可靠度測試後之連接電阻的測量
實施例和比較實施例內所製備的各向異性導電膜之40℃之儲存模數、起始的黏著強度、起始的連接電阻,以及可靠度測試後之連接電阻係測量如下。
(1)40℃之儲存模數
以一種35μm厚的各向異性導電膜放置於熱壓機上,將0.2mm厚的矽氧橡膠放置於該膜上且經歷190℃和30Mpa之加熱和壓縮歷時15分鐘來固化連接材料,接著移除脫模膜。
接而,該膜的40℃之儲存模數係使用動態機械分析儀(DMA)(TA Instruments)來測量,同時以10℃/min的速率、由-40℃來增高溫度至200℃。
(2)起始的黏著強度和起始的連接電阻
為了測量實施例以及比較實施例內所製備的各向異性導電膜之黏著強度和連接電阻,將各膜放置於PCB(間距:200μm,終端寬度:100μm,終端之間的距離:100μm,終端高度:35μm)及COF膜間距:200μm,終端寬度:100μm,終端之間的距離:100μm,終端高度:8μm)之間,以及於下列的條件下連接。
1)預壓縮;50℃,1秒,1.0MPa
2)主要壓縮;130℃,3秒,3.0MPa(條件1),190℃,3秒,4.0MPa(條件2)
該經壓縮的膜關於PCB或COF膜之黏著強度係 使用一種萬能試驗機(UTM)(Hounsfield型號H5KT)、透過下列的方法來測量:1)在架置測力器至試驗機之後,2)提供手柄至試驗機,以及3)以50mm/min的抗拉試驗速度、以90°的剝離方式、用手柄來夾牢樣本來測量黏著強度。
連接電阻係使用電阻測試器2000萬用電表(Keithley Co.,Ltd.)、透過施加1mA的測試電流、藉由4-探針方法來測量。
(3)可靠度測試後之連接電阻
為了評估該等膜,將膜的樣本留在85℃和85% RH的室內歷時500小時,接著透過如上相同的方法來測量連接電阻,以及計算平均值。
測量結果顯示於表2內。
縱然已經揭示一些具體例,熟悉此藝者會明白該等具體例僅僅提供當作例示,以及可以做出各種各樣的修飾、改變、變更,和均等的具體例而不會背離本發明的精神和範疇。本發明的範疇應僅由附隨的申請專利範圍所限制。

Claims (11)

  1. 一種各向異性導電膜,其1)於該膜固化後、於40℃具有100MPa至300MPa之儲存模數,以及2)於該膜的示差掃瞄熱量分析儀剖面圖內具有80℃至90℃之尖峰,其中該各向異性導電膜包含:(A)熱塑性樹脂,(B)第一可自由基聚合性材料,(C)第二可自由基聚合性材料,(D)矽石,以及(B)有機過氧化物,其中根據該(B)第一可自由基聚合性材料的固體含量重量及該(C)第二可自由基聚合性材料的固體含量重量之總和B+C,對於該(A)熱塑性樹脂的固體含量重量及該(D)矽石的固體含量重量之總和A+D,之比率(B+C)/(A+D)範圍由0.20至0.45。
  2. 如請求項1之各向異性導電膜,其中該各向異性導電膜具有120℃至200℃的主要壓縮溫度。
  3. 如請求項1之各向異性導電膜,其中該各向異性導電膜使用來接合覆晶軟板(chip-on-flex)至印刷電路板。
  4. 如請求項1之各向異性導電膜,其中該熱塑性樹脂包含選自於以下所構成的群組之至少一者:丙烯腈丁二烯共聚物、丙烯酸酯改質之胺甲酸乙酯樹脂,以及丙烯酸(acryl)共聚物。
  5. 如請求項1之各向異性導電膜,其中該各向異性導電膜進一步包含導電粒子。
  6. 一種用於各向異性導電膜之組成物,其包含:(A)熱塑性樹脂;(B)第一可自由基聚合性材料;(C)第二可自由基聚合性材料;(D)矽石;(E)有機過氧化物;以及(F)導 電粒子,其中根據該(B)第一可自由基聚合性材料的固體含量重量及該(C)第二可自由基聚合性材料的固體含量重量之總和B+C,對於該(A)熱塑性樹脂的固體含量重量及該(D)矽石的固體含量重量之總和A+D,之比率(B+C)/(A+D)範圍由0.20至0.45。
  7. 如請求項6之用於各向異性導電膜之組成物,其中該熱塑性樹脂包含選自於以下所構成的群組之至少一者:丙烯腈丁二烯共聚物、丙烯酸酯改質之胺甲酸乙酯樹脂,以及丙烯酸共聚物。
  8. 如請求項7之用於各向異性導電膜之組成物,其中就固體含量而言,以該組成物的總重量為基準,該丙烯酸共聚物係以8重量百分比(wt%)至20wt%的量存在。
  9. 如請求項6之用於各向異性導電膜之組成物,其中就固體含量而言,以該組成物的總重量為基準,該矽石係以3wt%至8wt%的量存在。
  10. 如請求項6至9中任一項之用於各向異性導電膜之組成物,其中該組成物進一步包含二氧化鈦。
  11. 一種半導體元件,其包含:具有第一電極的第一連接構件;具有第二電極的第二連接構件;以及如請求項1至5中任一項之各向異性導電膜,或是由如請求項6至10中任一項之組成物製備的各向異性導電膜,該各向異性導電膜被放置在該第一連接構件和該第二連接構件之間,且連接該第一電極和該第二電極。
TW102140691A 2012-12-11 2013-11-08 各向異性導電膜、用於該各向異性導電膜之組成物及半導體元件 TWI527874B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120143299A KR101551758B1 (ko) 2012-12-11 2012-12-11 이방 도전성 필름용 조성물 및 이방 도전성 필름

Publications (2)

Publication Number Publication Date
TW201425521A TW201425521A (zh) 2014-07-01
TWI527874B true TWI527874B (zh) 2016-04-01

Family

ID=50880070

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102140691A TWI527874B (zh) 2012-12-11 2013-11-08 各向異性導電膜、用於該各向異性導電膜之組成物及半導體元件

Country Status (4)

Country Link
US (1) US9252117B2 (zh)
KR (1) KR101551758B1 (zh)
CN (1) CN103871544B (zh)
TW (1) TWI527874B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101706821B1 (ko) * 2014-09-01 2017-02-14 삼성에스디아이 주식회사 이방 도전성 필름 및 상기 필름에 의해 접속된 반도체 장치
KR101716551B1 (ko) * 2014-11-27 2017-03-14 삼성에스디아이 주식회사 이방 도전성 필름 및 이를 이용한 반도체 장치
JP7039883B2 (ja) * 2016-12-01 2022-03-23 デクセリアルズ株式会社 異方性導電フィルム
JP6327630B1 (ja) * 2017-04-28 2018-05-23 リンテック株式会社 フィルム状焼成材料、支持シート付フィルム状焼成材料、フィルム状焼成材料の製造方法、及び支持シート付フィルム状焼成材料の製造方法
WO2019054237A1 (ja) * 2017-09-15 2019-03-21 リンテック株式会社 フィルム状焼成材料、及び支持シート付フィルム状焼成材料
EP3667707A4 (en) * 2017-09-15 2021-09-08 Lintec Corporation BAKING MATERIAL IN THE FORM OF FILM AND BAKING EQUIPMENT IN THE FORM OF FILM EQUIPPED WITH A SUPPORT SHEET

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5096962A (en) * 1990-11-29 1992-03-17 Lord Corporation Acrylic adhesive compositions
JP2927001B2 (ja) * 1990-12-17 1999-07-28 住友電気工業株式会社 フレキシブル印刷配線板用接着剤組成物
AU3975793A (en) * 1992-04-03 1993-11-08 Thermoset Plastics, Inc. Conductor-filled thermosetting resin
JPH06295617A (ja) * 1993-04-06 1994-10-21 Fuji Kobunshi Kogyo Kk 異方導電性接着剤組成物
US5395876A (en) * 1993-04-19 1995-03-07 Acheson Industries, Inc. Surface mount conductive adhesives
JPH07326635A (ja) * 1994-05-31 1995-12-12 Hitachi Chem Co Ltd 接着剤および半導体装置
JP3587859B2 (ja) * 1997-03-31 2004-11-10 日立化成工業株式会社 回路接続材料並びに回路端子の接続構造及び接続方法
US6352775B1 (en) * 2000-08-01 2002-03-05 Takeda Chemical Industries, Ltd. Conductive, multilayer-structured resin particles and anisotropic conductive adhesives using the same
US6458623B1 (en) * 2001-01-17 2002-10-01 International Business Machines Corporation Conductive adhesive interconnection with insulating polymer carrier
JP3665579B2 (ja) * 2001-02-26 2005-06-29 ソニーケミカル株式会社 電気装置製造方法
JP4522604B2 (ja) * 2001-03-19 2010-08-11 日東電工株式会社 異方導電性フィルム
CN101016402A (zh) * 2003-01-07 2007-08-15 积水化学工业株式会社 固化性树脂组合物、粘接性环氧树脂膏、粘接性环氧树脂薄片、导电连接膏、导电连接薄片和电子器件接合体
JP4238124B2 (ja) 2003-01-07 2009-03-11 積水化学工業株式会社 硬化性樹脂組成物、接着性エポキシ樹脂ペースト、接着性エポキシ樹脂シート、導電接続ペースト、導電接続シート及び電子部品接合体
TW200707468A (en) 2005-04-06 2007-02-16 Toagosei Co Ltd Conductive paste, circuit board, circuit article and method for manufacturing such circuit article
KR100727741B1 (ko) 2005-12-30 2007-06-13 제일모직주식회사 초속경화용 이방도전성 접착제 및 이를 이용한 이방도전성필름상 접속 부재
KR100747336B1 (ko) * 2006-01-20 2007-08-07 엘에스전선 주식회사 이방성 도전 필름을 이용한 회로기판의 접속 구조체, 이를위한 제조 방법 및 이를 이용한 접속 상태 평가방법
JP5549103B2 (ja) * 2008-07-11 2014-07-16 デクセリアルズ株式会社 異方性導電フィルム
KR20100073848A (ko) 2008-12-23 2010-07-01 제일모직주식회사 전기전자용 접착필름 조성물 및 이를 이용한 전기전자용 접착필름
US8847480B2 (en) * 2009-03-18 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Lighting device
JP4976522B2 (ja) * 2010-04-16 2012-07-18 日東電工株式会社 熱硬化型ダイボンドフィルム、ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法
KR101293788B1 (ko) * 2010-11-24 2013-08-06 제일모직주식회사 이방 전도성 필름용 조성물 및 이를 이용한 이방 전도성 필름
JP2012172128A (ja) 2011-02-24 2012-09-10 Kuraray Co Ltd 異方導電性接着フィルム

Also Published As

Publication number Publication date
US20140159229A1 (en) 2014-06-12
US9252117B2 (en) 2016-02-02
CN103871544B (zh) 2017-01-04
CN103871544A (zh) 2014-06-18
TW201425521A (zh) 2014-07-01
KR101551758B1 (ko) 2015-09-09
KR20140075191A (ko) 2014-06-19

Similar Documents

Publication Publication Date Title
TWI402327B (zh) 異方性導電黏接劑組成物及使用該異方性導電黏接劑組成物的異方性導電膜與相關之方法
TWI527874B (zh) 各向異性導電膜、用於該各向異性導電膜之組成物及半導體元件
TWI425070B (zh) 各向異性導電膜(二)
TWI544055B (zh) 各向異性導電膜組成物、各向異性導電膜以及半導體裝置
TWI378751B (zh)
TW201132724A (en) Adhesive composition, adhesive composition for circuit connection and circuit connection structure and semiconductor device using it
TWI546362B (zh) 各向異性導電膜及半導體裝置
TW201329189A (zh) 具有改良預接合處理性之各向異性導電膜以及半導體元件
KR101127099B1 (ko) 이방 전도성 필름용 조성물 및 이를 이용한 이방 전도성 필름
TWI469874B (zh) 含有各向異性傳導膜之光學構件
TWI596176B (zh) 各向異性導電膜組成物、各向異性導電膜以及半導體元件
TWI587761B (zh) 接著劑組成物、膜狀接著劑、接著片、電路連接體、電路構件的連接方法、接著劑組成物的使用、膜狀接著劑的使用及接著片的使用
TWI491698B (zh) 用於各向異性導電黏合膜之組成物、各向異性導電黏合膜及半導體裝置
TWI506114B (zh) 各向異性導電膜及半導體裝置
TWI510593B (zh) 異向性導電膜用組成物,異向性導電膜及半導體元件
TWI555810B (zh) 各向異性導電膜及半導體元件
CN107118706B (zh) 各向异性导电膜和由其连接的显示装置
US9142525B2 (en) Semiconductor device bonded by anisotropic conductive film
KR101541115B1 (ko) 이방 전도성 접착 조성물 및 이를 이용한 이방 전도성 필름
KR20160012532A (ko) 이방 도전성 필름, 이의 제조 방법, 및 이를 포함하는 반도체 장치
KR101716551B1 (ko) 이방 도전성 필름 및 이를 이용한 반도체 장치
WO2023195398A1 (ja) 接着剤組成物、回路接続用接着剤フィルム、回路接続構造体及びその製造方法
JP2010212706A (ja) 回路接続材料及びそれを用いた回路板の製造方法、回路板
KR20140096798A (ko) 이방 전도성 필름 및 반도체 장치