TWI525737B - Method and apparatus for picking and placing chip dies with high aspect ratio - Google Patents

Method and apparatus for picking and placing chip dies with high aspect ratio Download PDF

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TWI525737B
TWI525737B TW103105550A TW103105550A TWI525737B TW I525737 B TWI525737 B TW I525737B TW 103105550 A TW103105550 A TW 103105550A TW 103105550 A TW103105550 A TW 103105550A TW I525737 B TWI525737 B TW I525737B
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die
picking
wafer
vacuum
positioning point
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TW201533825A (en
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蔡俊嚴
郭育丞
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聯詠科技股份有限公司
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Description

可挑揀高長寬比晶粒之晶粒挑揀裝置及方法 Grain picking device and method capable of picking high aspect ratio die

本發明係關於一種晶粒挑揀裝置及方法,尤指一種可挑揀高長寬比晶粒之晶粒挑揀裝置及方法。 The present invention relates to a grain picking device and method, and more particularly to a die picking device and method for picking high aspect ratio grains.

一般而言,積體電路(Integrated Circuit,IC)經電路設計、合成、布局,然後製造後,所有的晶片晶粒會如同矩陣般規則的分布在一片晶圓(wafer)之上。雖然一些基本晶片功能測試會經由晶圓上測試(On Wafer Test)來完成,但關於電氣特性與晶片性能測試,仍然必須在晶粒切割(Die Saw)後,經由晶粒承載盤(Chip Tray)運送至測試機台來測試,而晶粒在晶粒承載盤與測試機台之間的移動,就必須經由晶粒挑揀機台(Pick & Place)來完成。同樣地,對於將晶粒由晶圓框(Wafer Frame)移至晶粒承載盤,或者由晶粒承載盤移至晶圓框的過程,也是透過晶粒挑揀機台來完成。 In general, after the integrated circuit (IC) is designed, synthesized, laid out, and then fabricated, all the wafer dies are regularly distributed on a wafer like a matrix. Although some basic wafer functional tests are performed via the On Wafer Test, electrical characteristics and wafer performance testing must still be performed after Die Saw via Chip Holder (Chip Tray). Shipped to the test machine for testing, and the movement of the die between the die carrier and the test machine must be done via the Pick & Place. Similarly, the process of moving the die from the wafer frame to the die carrier or from the die carrier to the wafer frame is also accomplished through the die picker.

常見的晶片如SOC(System on Chip)或ASIC(Application Specific Integrated Circuit)等,為了面積的最佳化與最短繞線的考量,其晶粒(die)多設計盡量接近正方型,也就是說,晶粒的長寬比約為1。請參考第1圖,第1圖為習知一晶粒挑揀裝置之一晶粒吸取頭108挑揀一晶粒102之示意圖。為了圖示簡潔,關於晶粒挑揀裝置之圖示僅繪出晶粒吸取頭的位置。第1圖所示,由於晶粒102之長寬比大約為1,若晶粒102在X方向、Y方向或晶粒與吸取頭之間的相對旋轉角度(Theta角)有少許偏移,晶粒吸取頭108 在吸取晶粒102時還是可與晶粒102有大面積的重疊,因此在晶粒挑揀流程中,對於晶粒挑揀機台的精準度要求也就不會太高。如第2圖所示,晶粒在晶粒承載盤200上大至呈規則狀排列,晶粒吸取頭208只要將左下角第一顆晶粒設為定位點217,在進行對位後,經由使用者輸入的晶粒202間間距,晶粒吸取頭208之中心點207即可對在晶粒202上,對所有的晶粒以逐粒的方式或以指定晶粒的方式進行挑揀。 Common wafers such as SOC (System on Chip) or ASIC (Application Specific Integrated Circuit), etc., for the optimization of area and the consideration of the shortest winding, the die is designed to be as close as possible to the square shape, that is, The aspect ratio of the grains is about 1. Please refer to FIG. 1. FIG. 1 is a schematic diagram of a die picking head 108 picking up a die 102 by a conventional die picking device. For simplicity of illustration, the illustration of the die picking device only depicts the position of the die picker. As shown in Fig. 1, since the aspect ratio of the crystal grain 102 is about 1, if the crystal grain 102 is slightly shifted in the X direction, the Y direction, or the relative rotation angle (Theta angle) between the crystal grain and the suction head, the crystal Pellet picker 108 When the die 102 is sucked, it can still overlap with the die 102 in a large area. Therefore, in the die picking process, the precision requirement for the die picking machine is not too high. As shown in FIG. 2, the crystal grains are arranged on the die carrier 200 in a regular manner, and the die picking head 208 only needs to set the first die in the lower left corner as the positioning point 217, after the alignment is performed. The distance between the die 202 input by the user, the center point 207 of the die pick-up head 208 can be picked up on the die 202 for all grains in a grain-by-grain manner or in a specified grain.

然而,高長寬比的晶粒在挑揀流程中將會遇到對位、吸取、放置的困難,於是就導致了可信賴度的問題。例如,驅動IC(Driver IC)的晶粒長寬比可能大於10,而晶粒挑揀機台上只有一個晶粒吸取頭,於是就有可能產生吸力不足而掉落,或是定位不精確而重心偏移,甚至因為晶粒承載盤與晶粒挑揀機台間角度的偏移,對應至晶粒挑揀流程中的對位、吸取、放置等步驟就會有較大的偏差,而導致晶粒無法被有效挑揀起來。 However, high aspect ratio grains will encounter difficulties in alignment, suction, and placement during the picking process, thus causing reliability problems. For example, the driver IC (Chip IC) may have a grain aspect ratio greater than 10, and the die picker has only one die pick-up head, so there may be insufficient suction and drop, or the positioning is inaccurate and the center of gravity Offset, even because of the offset of the angle between the die carrier and the die picker, there will be a large deviation from the alignment, suction, placement, etc. in the die picking process, resulting in the die not being able to Being effectively picked up.

因此,如何發展可挑揀高長寬比晶粒之晶粒挑揀方法及晶粒挑揀裝置,實為本領域的重要課題之一。 Therefore, how to develop a grain picking method and a grain picking device that can pick up high aspect ratio grains is one of the important topics in the field.

本發明的目的之一即在於提供一種晶粒挑揀裝置及方法,其利用具有多個真空晶粒吸取頭的晶粒挑揀機台,並解決傳統晶粒挑揀機台無法準確或有效挑揀高長寬比晶粒的問題。 One of the objects of the present invention is to provide a die picking apparatus and method which utilizes a die picking machine having a plurality of vacuum die picking heads and solves the problem that the conventional die picking machine cannot accurately or efficiently pick high aspect ratio crystals. Granule problem.

本發明揭露一種挑揀晶粒的方法,用來將放置於一晶片承載盤(Chip Tray)上之複數個晶粒利用一晶粒挑揀裝置(Pick and Place)由該晶片承載盤挑揀並放置到一晶圓框(Wafer Frame)上。該方法包含有設定該晶片承載盤之尺寸,並設定該複數個晶粒之排列位置或間距;移動該晶粒挑揀裝置之一挑揀臂,使該挑揀臂上兩真空晶粒吸取頭(vacuum chuck)之一中 心點與該晶片承載盤之一第一定位點重疊對齊,並計算該第一定位點相對於該晶粒挑揀裝置之一第一座標值;移動該晶粒挑揀裝置之該挑揀臂,使該挑揀臂上兩真空晶粒吸取頭之該中心點與該晶片承載盤之一第二定位點重疊對齊,並計算該晶片承載盤相對於該晶粒挑揀裝置之一第一旋轉角度;以及根據該第一座標值、該第一旋轉角度、該晶片承載盤之尺寸及該複數個晶粒之排列位置或間距,將該挑揀臂上兩真空晶粒吸取頭移動至該複數個晶粒中一晶粒上,以吸取該晶粒。 The invention discloses a method for picking up dies, which is used to pick up and place a plurality of dies placed on a chip carrier (Phip Tray) from the wafer carrier tray and place them into a wafer pick-up tray (Pick and Place). On the wafer frame (Wafer Frame). The method includes setting a size of the wafer carrier and setting an arrangement position or spacing of the plurality of crystal grains; moving one of the picking arms of the die picking device to make two vacuum die suction heads on the picking arm (vacuum chuck) One of them The center point is overlapped with a first positioning point of the wafer carrier, and a first coordinate value of the first positioning point relative to the die picking device is calculated; and the picking arm of the die picking device is moved to make the Locating the center point of the two vacuum die suction heads on the picking arm with a second positioning point of one of the wafer carrier disks, and calculating a first rotation angle of the wafer carrier disk relative to the die picking device; a first index value, the first rotation angle, a size of the wafer carrier, and an arrangement position or spacing of the plurality of crystal grains, and moving the two vacuum die suction heads on the pick arm to a crystal in the plurality of crystal grains Granules to absorb the grains.

本發明另揭露一種可挑揀高長寬比晶粒之晶粒挑揀裝置,用來將放置於一晶片承載盤(Chip Tray)上之複數個晶粒由該晶片承載盤挑揀並放置到一晶圓框(Wafer Frame)上。該晶粒挑揀裝置包含一設定模組,用來設定一晶片承載盤之尺寸,以及用來設定該複數個晶粒之排列位置或間距;一對位模組,用來移動該晶粒挑揀裝置之一挑揀臂,使該挑揀臂上兩真空晶粒吸取頭(vacuum chuck)之一中心點與該晶片承載盤之一第一定位點重疊對齊,以計算該第一定位點相對於該晶粒挑揀裝置之一第一座標值,以及用來移動該晶粒挑揀裝置之該挑揀臂,使該挑揀臂上兩真空晶粒吸取頭之該中心點與該晶片承載盤之一第二定位點重疊對齊,以計算該晶片承載盤相對於該晶粒挑揀裝置之一第一旋轉角度;以及一晶粒吸取模組,用來根據該第一座標值、該第一旋轉角度、該晶片承載盤之尺寸及該複數個晶粒之排列位置或間距,將該挑揀臂上兩真空晶粒吸取頭移動至該複數個晶粒中一晶粒上,以吸取該晶粒。 The invention further discloses a die picking device capable of picking up high aspect ratio dies for picking and placing a plurality of dies placed on a wafer carrier disk into a wafer frame ( Wafer Frame). The die picking device includes a setting module for setting a size of a wafer carrier, and for setting an arrangement position or spacing of the plurality of crystal grains; and a pair of bit modules for moving the die picking device a picking arm, wherein a center point of one of the vacuum chucks on the picking arm is overlapped with a first positioning point of the one of the wafer carrying trays to calculate the first positioning point relative to the die a first coordinate value of one of the picking devices, and the picking arm for moving the die picking device, such that the center point of the two vacuum die picking heads on the picking arm overlaps with a second positioning point of the one of the wafer carrying trays Aligning to calculate a first rotation angle of the wafer carrier relative to the die picking device; and a die picking module for: according to the first coordinate value, the first rotation angle, the wafer carrier The size and the arrangement position or spacing of the plurality of crystal grains move the two vacuum die suction heads on the pick arm to a die of the plurality of crystal grains to absorb the crystal grains.

102、202、402、502、602‧‧‧晶粒 102, 202, 402, 502, 602‧‧ ‧ grains

602’‧‧‧理想的晶粒位置 602’‧‧‧Ideal grain position

108、208‧‧‧晶粒吸取頭 108, 208‧‧‧ die picking head

408、418、508、518、608、618‧‧‧真空晶粒吸取頭 408, 418, 508, 518, 608, 618‧‧‧ vacuum die suction head

200、500、700‧‧‧晶片承載盤 200, 500, 700‧‧‧ wafer carrier

217、517、717、737‧‧‧定位點 217, 517, 717, 737‧‧ ‧ anchor points

207、507、607、707‧‧‧中心點 207, 507, 607, 707 ‧ ‧ central point

θ‧‧‧角度 Θ‧‧‧ angle

30‧‧‧流程 30‧‧‧Process

300~310‧‧‧步驟 300~310‧‧‧Steps

90‧‧‧晶粒挑揀裝置 90‧‧‧Grad picking device

900‧‧‧承載盤載具 900‧‧‧Loading tray carrier

902‧‧‧設定模組 902‧‧‧Setting module

904‧‧‧影像擷取模組 904‧‧‧Image capture module

906‧‧‧對位模組 906‧‧‧ alignment module

908‧‧‧晶粒吸取模組 908‧‧‧Grad suction module

第1圖為習知一晶粒挑揀裝置之一晶粒吸取頭挑揀一晶粒之示意圖。 Figure 1 is a schematic diagram of a grain picking head picking up a die from a conventional grain picking device.

第2圖為第1圖之晶粒吸取頭操作於一晶片承載盤之上視圖。 Figure 2 is a top view of the die pick-up head of Figure 1 operating on a wafer carrier.

第3圖為本發明實施例一晶粒挑揀流程之示意圖。 FIG. 3 is a schematic diagram of a die picking process according to an embodiment of the present invention.

第4圖為本發明實施例一晶粒與晶粒挑揀裝置之真空晶粒吸取頭之局部示意圖。 4 is a partial schematic view of a vacuum die pick-up head of a die and die picking device according to an embodiment of the present invention.

第5圖為本發明實施例真空晶粒吸取頭操作於一晶片承載盤之上視圖。 Figure 5 is a top view of a vacuum die pick-up head operating on a wafer carrier tray in accordance with an embodiment of the present invention.

第6圖為本發明實施例真空晶粒吸取頭吸取一晶粒之上視圖。 Figure 6 is a top view of a die taken by a vacuum die pick-up head according to an embodiment of the present invention.

第7圖說明當晶片承載盤與晶粒挑揀裝置存在角度誤差時之示意圖。 Figure 7 illustrates a schematic diagram when there is an angular error between the wafer carrier and the die picking device.

第8圖為利用二定位點對第7圖之晶片承載盤進行對位之示意圖。 Figure 8 is a schematic diagram of the alignment of the wafer carrier of Figure 7 using two positioning points.

第9圖為本發明實施例一晶粒挑揀裝置之示意圖。 Figure 9 is a schematic view of a die picking device according to an embodiment of the present invention.

請參考第3圖,第3圖為本發明實施例一晶粒挑揀流程30之示意圖。晶粒挑揀流程30係用來將放置於一晶片承載盤(Chip Tray)上之複數個晶粒利用一晶粒挑揀裝置(Pick and Place)由該晶片承載盤挑揀並放置到一晶圓框(Wafer Frame)上。晶粒挑揀流程30可應用於具有高長寬比的晶粒,對於長寬比大於10的驅動晶片(Driver IC),也能有效地挑揀。晶粒挑揀流程30包含有以下步驟: Please refer to FIG. 3, which is a schematic diagram of a die picking process 30 according to an embodiment of the present invention. The die picking process 30 is for picking up a plurality of dies placed on a chip carrier (Phip Tray) from the wafer carrier by a wafer picker and placing it on a wafer frame ( Wafer Frame). The die picking process 30 can be applied to dies having a high aspect ratio and can be efficiently picked for a driver IC having an aspect ratio greater than 10. The grain picking process 30 includes the following steps:

步驟300:開始。 Step 300: Start.

步驟302:設定該晶片承載盤之尺寸,並設定該複數個晶粒之排列位置或間距。 Step 302: Set the size of the wafer carrier and set the arrangement position or spacing of the plurality of crystal grains.

步驟304:移動該晶粒挑揀裝置之一挑揀臂,使該挑揀臂上兩真空晶粒吸取頭(vacuum chuck)之一中心點與該晶片承載盤之一第一定位點重疊對齊,並計算該第一定位點相對於該晶粒挑揀裝置之一第一座標值。 Step 304: Moving one of the picking arms of the die picking device, so that a center point of one of the vacuum chucks on the picking arm overlaps with a first positioning point of one of the wafer carrying trays, and calculates the The first anchor point is relative to one of the first coordinate values of the die picking device.

步驟306:移動該晶粒挑揀裝置之該挑揀臂,使該挑揀臂上兩真空晶粒吸取頭之該中心點與該晶片承載盤之一第二定位點重疊對齊,並計算該晶片承載盤相對於該晶粒挑揀裝置之一第一旋轉角度。 Step 306: Move the picking arm of the die picking device to overlap the center point of the two vacuum die picking heads on the picking arm with a second positioning point of the wafer carrier, and calculate the relative position of the wafer carrier One of the first rotation angles of the die picking device.

步驟308:根據該第一座標值、該第一旋轉角度、該晶片承載盤之尺寸及該複數個晶粒之排列位置或間距,將該挑揀臂上兩真空晶粒吸取頭 移動至該複數個晶粒中一晶粒上,以吸取該晶粒。 Step 308: According to the first coordinate value, the first rotation angle, the size of the wafer carrier, and the arrangement position or spacing of the plurality of crystal grains, the two vacuum die suction heads on the picking arm are Moving to a die of the plurality of grains to pick up the die.

步驟310:結束。 Step 310: End.

根據晶粒挑揀流程30,首先將晶粒挑揀裝置作初始化設定。初始化設定可包含設定晶片承載盤之尺寸,並設定複數個晶粒之排列位置與間距。接著,根據使用者設定,移動該晶粒挑揀裝置之一挑揀臂,使該挑揀臂上兩真空晶粒吸取頭之一中心點移至晶片承載盤之一預先設定的第一定位點座標,然後利用影像擷取裝置來校正直到該中心點與晶片承載盤之一第一定位點完全重疊對齊,並計算該第一定位點相對於晶粒挑揀裝置之一第一座標值。除此之外,根據使用者設定與影像擷取裝置的校正,移動晶粒挑揀裝置之挑揀臂,使挑揀臂上兩真空晶粒吸取頭之中心點與晶片承載盤之一第二定位點重疊對齊,並計算晶片承載盤相對於晶粒挑揀裝置之一第一旋轉角度。然後,根據該第一座標值、該第一旋轉角度、該晶片承載盤之尺寸及該複數個晶粒之排列位置或間距,得知晶粒的實際位置,據以將該挑揀臂上兩真空晶粒吸取頭移動至欲挑揀的晶粒上,並適當地調整兩真空晶粒吸取頭的角度,以吸取該晶粒。透過晶粒挑揀流程30的操作,可得知晶粒在X方向、Y方向或晶粒與吸取頭之間的相對旋轉角度(Theta角)的實際值,以校正挑揀臂上兩真空晶粒吸取頭的位置及角度,因此可挑揀高長寬比的晶粒。 According to the die picking process 30, the die picking device is first initialized. The initial setting may include setting the size of the wafer carrier and setting the arrangement position and spacing of the plurality of crystal grains. Then, according to the user setting, one of the picking arms of the die picking device is moved to move a center point of the two vacuum die suction heads on the picking arm to a preset first positioning point coordinate of one of the wafer carrier disks, and then The image capturing device is used to correct until the center point is completely overlapped with the first positioning point of one of the wafer carrier disks, and the first coordinate value of the first positioning point relative to the die picking device is calculated. In addition, according to the user setting and the correction of the image capturing device, the picking arm of the die picking device is moved so that the center point of the two vacuum die picking heads on the picking arm overlaps with the second positioning point of one of the wafer carrier disks Align and calculate a first angle of rotation of the wafer carrier relative to one of the die picking devices. Then, according to the first coordinate value, the first rotation angle, the size of the wafer carrier, and the arrangement position or spacing of the plurality of crystal grains, the actual position of the die is obtained, and accordingly, the vacuum is applied to the picking arm. The die picking head is moved to the die to be picked, and the angles of the two vacuum die picking heads are appropriately adjusted to pick up the die. Through the operation of the grain picking process 30, the actual value of the relative rotation angle (Theta angle) of the grain in the X direction, the Y direction or the die and the suction head can be known to correct the two vacuum die suction on the picking arm. The position and angle of the head allows the selection of high aspect ratio grains.

詳細來說,請參考第4圖,第4圖為本發明實施例一晶粒402與晶粒挑揀裝置之真空晶粒吸取頭408、418之局部示意圖。為了圖示簡潔,第4圖僅繪出晶粒挑揀裝置之晶粒吸取頭的位置。晶粒挑揀裝置之挑揀臂上可配備有兩個或更多的真空晶粒吸取頭408、418,用來吸取高長寬比晶粒402的兩側。晶粒挑揀裝置另包含有一影像擷取裝置,用來放大並擷取晶粒的影像,以微調挑揀臂的位置。請參考第5圖,第5圖為本發明實施例真空晶粒吸取頭508、518操作於一晶片承載盤500之上視圖。晶粒挑揀裝置首先根據 預先設定的晶粒與定位點位置,移動該晶粒挑揀裝置之一挑揀臂,使挑揀臂上兩真空晶粒吸取頭508、518之一中心點507移至該晶片承載盤之一預先設定的第一定位點517座標,然後利用影像擷取裝置來校正直到該中心點與第一定位點517完全重疊對齊,並計算第一定位點517相對於晶粒挑揀裝置之一第一座標值(例如,在理想的情況下,第一座標值為(a/2,b/2),其中a、b分別為晶粒502之寬度、長度)。如果晶片承載盤與晶粒挑揀裝置之夾角為零,也就是說,不存在任何誤差,接下來晶粒挑揀裝置只需按照晶片承載盤之尺寸以及晶粒之排列位置與間距,逐一挑揀或挑揀指定的晶粒。 For details, please refer to FIG. 4, which is a partial schematic view of a vacuum die pick-up head 408, 418 of a die 402 and a die picking device according to an embodiment of the present invention. For the sake of simplicity of the illustration, Figure 4 only depicts the position of the die pick-up head of the die picking device. The picking arm of the die picking device can be equipped with two or more vacuum die picking heads 408, 418 for drawing both sides of the high aspect ratio die 402. The die picking device further includes an image capturing device for amplifying and capturing images of the die to fine tune the position of the picking arm. Please refer to FIG. 5. FIG. 5 is a top view of the vacuum die pick-up heads 508, 518 operating on a wafer carrier disk 500 according to an embodiment of the present invention. The grain picking device is first based on Presetting the position of the die and the positioning point, moving one of the picking arms of the die picking device, moving the center point 507 of one of the two vacuum die picking heads 508, 518 on the picking arm to a preset one of the wafer carrying trays The first positioning point 517 coordinates, and then is corrected by the image capturing device until the center point is completely overlapped with the first positioning point 517, and the first coordinate value of the first positioning point 517 relative to the die picking device is calculated (eg In the ideal case, the first coordinate value is (a/2, b/2), where a and b are the width and length of the die 502, respectively. If the angle between the wafer carrier and the die picking device is zero, that is, there is no error, then the die picking device only needs to pick or pick one by one according to the size of the wafer carrier and the arrangement position and spacing of the die. Specified grain.

然而,由於精準度的限制,晶片承載盤與晶粒挑揀裝置之夾角Theta可能不為零。如第6圖所示,虛線602’部分表示原來理想的晶粒位置,而實線602則表示存在角度誤差時的晶粒實際位置,兩者之間存在一誤差夾角Theta(θ)。由第6圖可知,若是採用習知單個真空吸取頭來挑揀高長寬比的晶粒的做法,就有可能產生挑揀不到或是挑揀時重心不平衡的問題。然而,若是利用兩個真空晶粒吸取頭608、618吸取晶粒602,雖然兩真空晶粒吸取頭608、618之中心點607已經偏離晶粒,但還是有較大機會可以順利挑揀。由此可知,高長寬比的晶粒對於定位的精準度上有較高的要求。 However, due to the limitation of accuracy, the angle between the wafer carrier and the die picking device Theta may not be zero. As shown in Fig. 6, the dotted line 602' indicates the original ideal grain position, and the solid line 602 indicates the actual position of the crystal grain when there is an angular error, and there is an error angle Theta(θ) between the two. It can be seen from Fig. 6 that if a conventional single vacuum suction head is used to pick a high aspect ratio grain, there is a possibility that the center of gravity imbalance may not be picked or picked. However, if the two vacuum die picking heads 608, 618 are used to pick up the die 602, although the center points 607 of the two vacuum die picking heads 608, 618 have deviated from the die, there is still a greater chance of picking. It can be seen that the high aspect ratio grains have higher requirements for positioning accuracy.

進一步地,第7圖說明當晶片承載盤700與晶粒挑揀裝置存在夾角θ之誤差時,對挑揀的影響。於第7圖中,717代表第一定位點的位置,而形狀為圓點的707代表晶粒挑揀裝置經對位計算後得出的晶粒吸取位置之中心點。其中,晶粒吸取位置之中心點707係根據由第一定位點717計算而得的第一座標值、所設定的晶片承載盤700之尺寸及晶粒之排列位置或間距計算得知。由第7圖可知,位置誤差在遠離第一定位點717的區域會被大幅度的放大,進而造成挑揀失敗的機率。為了將夾角誤差減到最小,可在晶片承載盤上加入一第二定位點737,如第8圖所示。在對第一定位點717進行 定位並記錄其座標之後,同樣地,移動晶粒挑揀裝置之一挑揀臂,使該挑揀臂上兩真空晶粒吸取頭之中心點與晶片承載盤700之第二定位點737重疊對齊,並計算第二定位點737相對於晶粒挑揀裝置之座標值,與晶片承載盤700相對於晶粒挑揀裝置之一旋轉角度θ。如此一來,便可以對每一晶粒進行對位,並產生一對位結果來提供晶粒挑揀裝置精確的晶粒座標,以精確地吸取每一晶粒。 Further, Fig. 7 illustrates the effect on picking when there is an error in the angle θ between the wafer carrier disk 700 and the die picking device. In Fig. 7, 717 represents the position of the first positioning point, and 707 of the shape of the dot represents the center point of the grain picking position obtained by the grain picking device after the alignment calculation. The center point 707 of the die picking position is calculated based on the first coordinate value calculated by the first positioning point 717, the size of the set wafer carrier 700, and the arrangement position or spacing of the crystal grains. It can be seen from Fig. 7 that the position error is greatly enlarged in the area away from the first positioning point 717, thereby causing the probability of picking failure. In order to minimize the angular error, a second positioning point 737 can be added to the wafer carrier, as shown in FIG. At the first positioning point 717 After positioning and recording the coordinates, similarly, one of the picking arms of the die picking device is moved so that the center point of the two vacuum die picking heads on the picking arm overlaps with the second positioning point 737 of the wafer carrier 700, and is calculated. The second positioning point 737 is rotated by an angle θ with respect to one of the wafer carrier devices relative to the wafer carrier 700 relative to the coordinate value of the die picking device. In this way, each die can be aligned and a pair of bit results can be generated to provide accurate grain coordinates of the die picking device to accurately pick up each die.

需注意的是,本發明係利用分別位於晶片承載盤上相對的兩角的第一定位點及第二定位點對高長寬比的晶粒進行對位及調校,以利兩真空晶粒吸取頭精確地吸取每一晶粒。本領域具通常知識者當可據以做不同之修飾,而不限於此。舉例來說,晶粒挑揀裝置之挑揀臂上可設置一旋轉構件,使兩真空晶粒吸取頭的連線與晶粒挑揀裝置本體的夾角可被調整,以利校正晶片承載盤之旋轉角度。此外,挑揀臂上兩真空晶粒吸取頭可共用同一個真空吸取幫浦,但不限於此。於另一實施例中,挑揀臂上兩真空晶粒吸取頭可分別連接至兩個獨立的真空吸取幫浦。 It should be noted that the present invention aligns and aligns the high aspect ratio dies with the first and second locating points respectively located at opposite corners of the wafer carrier to facilitate the two vacuum dies. Accurately draw each die. Those skilled in the art will be able to make various modifications, and are not limited thereto. For example, a rotating member may be disposed on the picking arm of the die picking device, so that the angle between the connection of the two vacuum die picking heads and the body of the die picking device can be adjusted to correct the rotation angle of the wafer carrier. In addition, the two vacuum die suction heads on the picking arm can share the same vacuum suction pump, but are not limited thereto. In another embodiment, the two vacuum die suction heads on the picking arm can be connected to two separate vacuum suction pumps, respectively.

晶粒挑揀裝置可利用影像擷取模組(例如,一放大裝置加上一攝像頭)擷取包含第一定位點之一第一影像,攝像頭可採用較高倍率的解析度以清楚地擷取一高長寬比晶粒的全部影像。第一影像可傳送至一處理模組,透過影像辨識技術分析晶粒的影像,以計算第一定位點相對於晶粒挑揀裝置之第一座標值。同樣地,該影像擷取模組亦可用來擷取包含第二定位點之一第二影像,並將第二影像傳送至處理模組,透過影像辨識技術分析晶粒的影像,以計算晶片承載盤相對於晶粒挑揀裝置之第一旋轉角度。 The image picking device may use an image capturing module (for example, an amplifying device plus a camera) to capture a first image including one of the first positioning points, and the camera may adopt a resolution of a higher magnification to clearly capture one All images of high aspect ratio grains. The first image can be transmitted to a processing module, and the image of the die is analyzed by image recognition technology to calculate a first coordinate value of the first positioning point relative to the die picking device. Similarly, the image capturing module can also be used to capture a second image including a second positioning point, and transmit the second image to the processing module, and analyze the image of the die through image recognition technology to calculate the wafer bearing. The first angle of rotation of the disk relative to the die picking device.

晶粒挑揀裝置可將吸取的晶粒放置於晶圓框中,以方便後續使用測試機台作晶粒的電氣特性與晶片性能測試。類似地,在晶圓框上可先定相 對的兩角分別具有一第三定位點及一第四定位點,用來校正晶圓框與挑揀臂上兩真空晶粒吸取頭之間的一第二座標值與一第二旋轉角度之誤差。晶粒放置的流程與晶粒挑揀流程類似,主要的差別在於一個是在對到正確的位置及角度後,將晶粒吸取,而另一個是在對到正確的位置及角度後,將晶粒放下。因此,詳細流程不再贅述。 The die picking device can place the sucked die in the wafer frame to facilitate subsequent use of the test machine for die electrical characteristics and wafer performance testing. Similarly, the wafer frame can be phased first. The two corners of the pair respectively have a third positioning point and a fourth positioning point for correcting a second coordinate value and a second rotation angle between the wafer frame and the two vacuum die suction heads on the picking arm. . The process of die placement is similar to the grain picking process. The main difference is that one picks up the die after the correct position and angle, and the other is the grain after the correct position and angle. lay down. Therefore, the detailed process will not be described again.

請參考第9圖,第9圖為本發明實施例一晶粒挑揀裝置90之示意圖。晶粒挑揀裝置90可用於挑揀如第8圖中晶片承載盤700內的晶粒。晶粒挑揀裝置90包含有一承載盤載具(Tray Loader)900、一設定模組902、一影像擷取模組904、一對位模組906以及一晶粒吸取模組908。承載盤載具900用來承載晶片承載盤700。設定模組902用來設定晶片承載盤700之尺寸,以及設定複數個晶粒702之排列位置或間距。影像擷取模組904用來擷取包含第一定位點717之第一影像,對位模組906用來移動晶粒挑揀裝置90之一挑揀臂,使挑揀臂上兩真空晶粒吸取頭之中心點與晶片承載盤700之第一定位點717重疊對齊,以計算第一定位點717相對於晶粒挑揀裝置90之第一座標值。影像擷取模組904另用來擷取包含第二定位點737之第二影像,並透過對位模組906移動晶粒挑揀裝置90之挑揀臂,使挑揀臂上兩真空晶粒吸取頭之中心點與晶片承載盤700之第二定位點737重疊對齊,以計算晶片承載盤700相對於晶粒挑揀裝置90之第一旋轉角度θ。晶粒吸取模組908用來根據第一座標值、第一旋轉角度θ、晶片承載盤700之尺寸及複數個晶粒702之排列位置或間距,將挑揀臂上兩真空晶粒吸取頭移動至複數個晶粒702其中一晶粒上,以吸取該晶粒。此外,關於晶粒挑揀裝置90其他部分的設計細節,與習知晶粒挑揀機台並無區別,故在此不予詳述。 Please refer to FIG. 9. FIG. 9 is a schematic diagram of a die picking device 90 according to an embodiment of the present invention. The die picking device 90 can be used to pick up the grains within the wafer carrier disk 700 as shown in FIG. The die picking device 90 includes a carrier carrier (Tray Loader) 900, a setting module 902, an image capturing module 904, a pair of bit modules 906, and a die picking module 908. The carrier tray carrier 900 is used to carry the wafer carrier tray 700. The setting module 902 is used to set the size of the wafer carrier 700 and to set the arrangement position or spacing of the plurality of dies 702. The image capturing module 904 is configured to capture a first image including a first positioning point 717. The alignment module 906 is configured to move one of the picking arms of the grain picking device 90 to enable the two vacuum die suction heads on the picking arm. The center point is overlapped with the first anchor point 717 of the wafer carrier disk 700 to calculate a first coordinate value of the first anchor point 717 relative to the die picking device 90. The image capturing module 904 is further configured to capture the second image including the second positioning point 737, and move the picking arm of the grain picking device 90 through the matching module 906 to make the two vacuum die suction heads on the picking arm The center point is overlapped with the second locating point 737 of the wafer carrier disk 700 to calculate a first rotational angle θ of the wafer carrier disk 700 relative to the die picking device 90. The die picking module 908 is configured to move the two vacuum die suction heads on the picking arm to the first coordinate value, the first rotation angle θ, the size of the wafer carrier 700, and the arrangement position or spacing of the plurality of crystal grains 702. A plurality of crystal grains 702 are on one of the crystal grains to absorb the crystal grains. In addition, the design details of other parts of the grain picking device 90 are not different from the conventional die picking machine, and therefore will not be described in detail herein.

另外,上述實施例係以將晶粒由晶片承載盤挑揀並放置到晶圓框上作說明,其中晶片承載盤具有複數個矩陣型式排列的溝槽,用來承載切割 後之該複數個晶粒,但不限於此。上述流程及實施例亦可應用於將晶粒由一晶圓框挑揀並放置到另一晶圓框上,或將晶粒由一晶圓框挑揀並放置到一晶片承載盤上。 In addition, the above embodiment is described in which the die is picked up from the wafer carrier and placed on the wafer frame, wherein the wafer carrier has a plurality of matrix-type grooves for carrying the cutting. The plurality of grains are followed by, but are not limited thereto. The above described processes and embodiments can also be applied to picking and placing a die from a wafer frame onto another wafer frame, or picking the die from a wafer frame and placing it on a wafer carrier.

綜上所述,本發明之晶粒挑揀流程及晶粒挑揀裝置可用來挑揀高長寬比的晶粒,利用挑揀臂上多個真空晶粒吸取頭吸取長寬比大致上大於等於2之長條形晶粒之兩側。並且,在對位的過程中以晶片承載盤上的第一定位點及第二定位點校正晶片承載盤與晶粒挑揀裝置中晶粒吸取頭模組之間的座標位置與旋轉角度誤差,以準確及有效地挑揀或放置高長寬比晶粒。 In summary, the die picking process and the grain picking device of the present invention can be used to pick up high aspect ratio grains, and use a plurality of vacuum die picking heads on the picking arm to absorb long strips having an aspect ratio of substantially 2 or more. Both sides of the grain. And correcting a coordinate position and a rotation angle error between the wafer carrier disk and the die pick-up head module in the die picking device by using the first positioning point and the second positioning point on the wafer carrier in the process of alignment Accurately and efficiently pick or place high aspect ratio grains.

以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。 The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

30‧‧‧流程 30‧‧‧Process

300~310‧‧‧步驟 300~310‧‧‧Steps

Claims (16)

一種挑揀晶粒的方法,用來將放置於一晶片承載盤(Chip Tray)上之複數個晶粒利用一晶粒挑揀裝置(Pick and Place)由該晶片承載盤挑揀並放置到一晶圓框(Wafer Frame)上,該方法包含有:設定該晶片承載盤之尺寸,並設定該複數個晶粒之排列位置或間距;移動該晶粒挑揀裝置之一挑揀臂,使該挑揀臂上兩真空晶粒吸取頭(vacuum chuck)之一中心點與該晶片承載盤之一第一定位點重疊對齊,並計算該第一定位點相對於該晶粒挑揀裝置之一第一座標值;移動該晶粒挑揀裝置之該挑揀臂,使該挑揀臂上兩真空晶粒吸取頭之該中心點與該晶片承載盤之一第二定位點重疊對齊,並計算該晶片承載盤相對於該晶粒挑揀裝置之一第一旋轉角度;以及根據該第一座標值、該第一旋轉角度、該晶片承載盤之尺寸及該複數個晶粒之排列位置或間距,將該挑揀臂上兩真空晶粒吸取頭移動至該複數個晶粒中一晶粒上,以吸取該晶粒。 A method of picking up dies for picking up a plurality of dies placed on a wafer carrier from a wafer carrier and picking them into a wafer frame using a die pick and place (Pick and Place) (Wafer Frame), the method comprises: setting a size of the wafer carrier, and setting an arrangement position or a spacing of the plurality of crystal grains; moving a picking arm of the die picking device to make two vacuums on the picking arm A center point of a vacuum chuck is overlapped with a first positioning point of the wafer carrier, and a first coordinate value of the first positioning point relative to the die picking device is calculated; and the crystal is moved The picking arm of the particle picking device is configured such that the center point of the two vacuum die picking heads on the picking arm overlaps with a second positioning point of the one of the wafer carrying trays, and the wafer carrying tray is calculated relative to the die picking device a first rotation angle; and two vacuum die suction heads on the pick arm according to the first coordinate value, the first rotation angle, the size of the wafer carrier, and the arrangement position or spacing of the plurality of crystal grains mobile The plurality of grains on a die, to draw the die. 如請求項1所述之方法,其中該第一定位點及該第二定位點分別位於該晶片承載盤上相對的兩角。 The method of claim 1, wherein the first positioning point and the second positioning point are respectively located at opposite corners of the wafer carrier. 如請求項1所述之方法,其中該晶片承載盤具有複數個矩陣型式排列的溝槽,用來承載切割後之該複數個晶粒。 The method of claim 1, wherein the wafer carrier has a plurality of matrix-arranged grooves for carrying the plurality of diced grains after cutting. 如請求項1所述之方法,其中該晶粒挑揀裝置利用一影像擷取模組擷取包含該第一定位點之一第一影像,以計算該第一定位點相對於該晶粒挑揀裝置之該第一座標值,並利用該影像擷取模組擷取包含該第二定位點之一第二影像,以計算該晶片承載盤相對於該晶粒挑揀裝置之該第一旋轉角度。 The method of claim 1, wherein the image picking device uses an image capturing module to capture a first image including the first positioning point to calculate the first positioning point relative to the die picking device. The first coordinate value is used, and the second image of the second positioning point is captured by the image capturing module to calculate the first rotation angle of the wafer carrier relative to the die picking device. 如請求項1所述之方法,其中該晶圓框用來放置該複數個晶粒以供一測試機台測試,且該晶圓框上相對的兩角分別具有一第三定位點及一第四定位點,用來校正該晶圓框與該挑揀臂上兩真空晶粒吸取頭之間的一第二座標值與一第二旋轉角度之誤差。 The method of claim 1, wherein the wafer frame is used to place the plurality of dies for testing by a test machine, and the opposite corners of the wafer frame respectively have a third positioning point and a first The four positioning points are used to correct an error between a second coordinate value and a second rotation angle between the wafer frame and the two vacuum die suction heads on the picking arm. 如請求項1所述之方法,其中該挑揀臂上兩真空晶粒吸取頭共用同一個真空吸取幫浦。 The method of claim 1, wherein the two vacuum die suction heads on the picking arm share the same vacuum pumping pump. 如請求項1所述之方法,其中該挑揀臂上兩真空晶粒吸取頭分別連接至兩個獨立的真空吸取幫浦。 The method of claim 1, wherein the two vacuum die suction heads on the picking arm are respectively connected to two independent vacuum suction pumps. 如請求項1所述之方法,其中該挑揀臂上兩真空晶粒吸取頭係用來吸取長寬比大致上大於等於2之長條形晶粒之兩側。 The method of claim 1, wherein the two vacuum die suction heads on the picking arm are configured to absorb both sides of the elongated strips having an aspect ratio substantially equal to or greater than two. 一種可挑揀高長寬比晶粒之晶粒挑揀裝置,用來將放置於一晶片承載盤(Chip Tray)上之複數個晶粒由該晶片承載盤挑揀並放置到一晶圓框(Wafer Frame)上,該晶粒挑揀裝置包含:一設定模組,用來設定一晶片承載盤之尺寸,以及用來設定該複數個晶粒之排列位置或間距;一對位模組,用來移動該晶粒挑揀裝置之一挑揀臂,使該挑揀臂上兩真空晶粒吸取頭(vacuum chuck)之一中心點與該晶片承載盤之一第一定位點重疊對齊,以計算該第一定位點相對於該晶粒挑揀裝置之一第一座標值,以及用來移動該晶粒挑揀裝置之該挑揀臂,使該挑揀臂上兩真空晶粒吸取頭之該中心點與該晶片承載盤之一第二定位點重疊對齊,以計算該晶片承載盤相對於該晶粒挑揀裝置之一第一旋 轉角度;以及一晶粒吸取模組,用來根據該第一座標值、該第一旋轉角度、該晶片承載盤之尺寸及該複數個晶粒之排列位置或間距,將該挑揀臂上兩真空晶粒吸取頭移動至該複數個晶粒中一晶粒上,以吸取該晶粒。 A die picking device for picking high aspect ratio dies for picking up a plurality of dies placed on a wafer carrier from a wafer carrier and placing them on a wafer frame The die picking device includes: a setting module for setting a size of a wafer carrier, and a setting position or spacing of the plurality of crystal grains; and a pair of bit modules for moving the die Picking arm of one of the picking devices, such that a center point of one of the vacuum chucks on the picking arm overlaps with a first positioning point of one of the wafer carrying trays to calculate the first positioning point relative to the a first coordinate value of one of the die picking devices, and the picking arm for moving the die picking device, such that the center point of the two vacuum die picking heads on the picking arm and the second positioning of the one of the wafer carrying trays Point overlap alignment to calculate the first spin of the wafer carrier relative to one of the die picking devices And a die picking module for locating the picking arm according to the first coordinate value, the first rotation angle, the size of the wafer carrier, and the arrangement position or spacing of the plurality of crystal grains The vacuum die picking head moves onto a die of the plurality of grains to pick up the die. 如請求項9所述之晶粒挑揀裝置,其中該第一定位點及該第二定位點分別位於該晶片承載盤上相對的兩角。 The die picking device of claim 9, wherein the first positioning point and the second positioning point are respectively located at opposite corners of the wafer carrier. 如請求項9所述之晶粒挑揀裝置,其中該晶片承載盤具有複數個矩陣型式排列的溝槽,用來承載切割後之該複數個晶粒。 The die picking device of claim 9, wherein the wafer carrier has a plurality of matrix-arranged grooves for carrying the plurality of die after cutting. 如請求項9所述之晶粒挑揀裝置,另包含一影像擷取模組,用來擷取包含該第一定位點之一第一影像,以計算該第一定位點相對於該晶粒挑揀裝置之該第一座標值,以及用來擷取包含該第二定位點之一第二影像,以計算該晶片承載盤相對於該晶粒挑揀裝置之該第一旋轉角度。 The image picking device of claim 9, further comprising an image capturing module for capturing a first image including the first positioning point to calculate the first positioning point relative to the die picking The first coordinate value of the device and the second image for capturing the second positioning point to calculate the first rotation angle of the wafer carrier relative to the die picking device. 如請求項9所述之晶粒挑揀裝置,其中該晶圓框用來放置該複數個晶粒以供一測試機台測試,且該晶圓框上相對的兩角分別具有一第三定位點及一第四定位點,用來校正該晶圓框與該挑揀臂上兩真空晶粒吸取頭之間的一第二座標值與一第二旋轉角度之誤差。 The chip picking device of claim 9, wherein the wafer frame is used to place the plurality of crystal grains for testing by a test machine, and the opposite corners of the wafer frame respectively have a third positioning point And a fourth positioning point for correcting a second coordinate value and a second rotation angle between the wafer frame and the two vacuum die suction heads on the picking arm. 如請求項9所述之晶粒挑揀裝置,其中該挑揀臂上兩真空晶粒吸取頭共用同一個真空吸取幫浦。 The die picking device of claim 9, wherein the two vacuum die suction heads on the picking arm share the same vacuum suction pump. 如請求項9所述之晶粒挑揀裝置,其中該挑揀臂上兩真空晶粒吸取頭分別連接至兩個獨立的真空吸取幫浦。 The die picking device of claim 9, wherein the two vacuum die suction heads on the picking arm are respectively connected to two independent vacuum suction pumps. 如請求項9所述之晶粒挑揀裝置,其中該挑揀臂上兩真空晶粒吸取頭係用來吸取長寬比大致上大於等於2之長條形晶粒之兩側。 The die picking device of claim 9, wherein the two vacuum die suction heads on the picking arm are configured to absorb both sides of the elongated strips having an aspect ratio substantially equal to or greater than two.
TW103105550A 2014-02-19 2014-02-19 Method and apparatus for picking and placing chip dies with high aspect ratio TWI525737B (en)

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