TWI574022B - Die Detection Apparatus And Die Delivery Method - Google Patents

Die Detection Apparatus And Die Delivery Method Download PDF

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TWI574022B
TWI574022B TW105101935A TW105101935A TWI574022B TW I574022 B TWI574022 B TW I574022B TW 105101935 A TW105101935 A TW 105101935A TW 105101935 A TW105101935 A TW 105101935A TW I574022 B TWI574022 B TW I574022B
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die
swing arm
rotation
bearing surface
amount
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TW105101935A
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TW201727248A (en
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林修緯
黃淳紹
李建佑
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旺矽科技股份有限公司
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Priority to TW105101935A priority Critical patent/TWI574022B/en
Priority to DE102016106223.5A priority patent/DE102016106223B3/en
Priority to MYPI2016702874A priority patent/MY192207A/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N35/00Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor
    • G01N35/0099Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor comprising robots or similar manipulators
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N35/00Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor
    • G01N35/10Devices for transferring samples or any liquids to, in, or from, the analysis apparatus, e.g. suction devices, injection devices

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  • Analytical Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Description

晶粒檢測裝置及晶粒傳送方法Grain detecting device and die transfer method

本發明提供一種檢測裝置與傳送方法,特別是一種可提高晶粒(Die)之傳送速率與檢測速率的晶粒檢測裝置及晶粒傳送方法。The invention provides a detecting device and a transmitting method, in particular to a die detecting device and a die transferring method capable of increasing a transfer rate and a detection rate of a die.

發光二極體(LED)是一種可發光之半導體電子元件,由於發光二極體具有效率高、反應速度快、壽命長等優點,故近年來已廣泛應於照明燈具、交通號誌、顯示面板等領域上。Light-emitting diode (LED) is a kind of semiconductor electronic component that can emit light. Because of its high efficiency, fast response speed and long life, the light-emitting diode has been widely used in lighting fixtures, traffic signs and display panels in recent years. In the field.

一般於市面所看到之發光二極體,多係為半導體晶粒(die)經由封裝成一體的發光組件。由於晶粒乃為發光二極體中之核心,且其影響發光二極體之發光特性甚劇,因此,於完成晶粒之製作後,一般皆需針對所生產之各個晶粒進行光電特性之檢測,對各晶粒之電氣特性及/或光電特性進行分類,以應用於不同產品。The light-emitting diodes generally seen in the market are mostly light-emitting components in which a semiconductor die is packaged into one body. Since the crystal grain is the core of the light-emitting diode and affects the light-emitting characteristics of the light-emitting diode, after the fabrication of the crystal grain, it is generally required to perform photoelectric characteristics for each of the produced crystal grains. Detection, classifying the electrical and/or optoelectronic properties of each die for application to different products.

在晶粒的檢測過程中,一般需透過檢測裝置的擺臂將切割平台上之每一晶粒移位至另一檢測平台上來進行檢測程序。然而,在此之前,晶圓切割裝置會先將軟性薄膜拉展延伸以擴張晶粒間之間距,因而致使晶粒出現分布距離不同以及位置偏移等問題。此外,晶粒於檢測平台上欲透過檢測裝置的擺臂移位至另一平台前,晶粒於檢測平台上亦可能於檢測過程中因探針之碰觸而出現旋轉、移位等問題。During the detection of the die, it is generally necessary to shift the die on the cutting platform to another detection platform through the swing arm of the detecting device to perform the detecting process. However, prior to this, the wafer cutting device first stretched the soft film to expand the inter-granular distance, thereby causing problems such as different distribution distances of the crystal grains and positional shift. In addition, before the die is moved to the other platform through the swing arm of the detecting device on the detecting platform, the die may be rotated or displaced due to the touch of the probe during the detecting process.

然而,上述此些位置偏移、晶粒旋轉等問題將會影響整體之傳送速率與檢測速率,且導致擺臂上之取放吸嘴無法精準吸取並精準移位至預設位置上釋放,甚至可能致使晶粒因取放吸嘴未精準吸取而受到損害,例如:掉落。因此,如何使擺臂上之取放吸嘴可精準地將晶粒吸取並將晶粒精準地移位至預設位置上釋放,並提升整體之傳送速率與檢測速率,以降低整體之生產成本,實為本技術領域之人員所欲琢磨的重要課題。However, such problems such as positional shift and grain rotation will affect the overall transfer rate and detection rate, and the pick-and-place nozzle on the swing arm cannot be accurately sucked and accurately displaced to a preset position for release, or even It may cause damage to the grain due to improper pick-up of the pick-and-place nozzle, for example: drop. Therefore, how to make the pick-and-place nozzle on the swing arm accurately absorb the die and accurately shift the die to a preset position to release, and improve the overall transfer rate and detection rate to reduce the overall production cost. It is an important topic that people in the technical field want to ponder.

有鑑於此,本發明之一實施例提供一種晶粒檢測裝置,包含第一取置平台、攝像裝置、第二取置平台、校正模組與移載機構。第一取置平台具有第一承載面,且第一承載面可用以承載晶粒。攝像裝置具有攝像鏡頭,且攝像裝置係以攝像鏡頭朝向第一承載面而設置於第一承載面之上方。於此,攝像裝置可用以擷取晶粒之影像。第二取置平台具有第二承載面。移載機構位於第一取置平台與第二取置平台之間。校正模組耦接於攝像裝置。校正模組可用以根據晶粒之影像來計算出晶粒的目標點以及旋轉偏移量,並可根據旋轉偏移量來計算出旋轉校正量。移載機構耦接至校正模組且位於第一取置平台與第二取置平台之間。移載機構可包含座體、擺臂與取放吸嘴。於此,擺臂具有第一端與相對於第一端之第二端,其中擺臂係以其第一端連接於座體,且擺臂可以其第一端為軸心而可旋轉於第一承載面與第二承載面之間。而取放吸嘴係位於擺臂之第二端。其中,擺臂可以一預定旋轉量為其預設之旋轉量,而使得擺臂可在第一取置平台之第一承載面的第一預定位置以及第二取置平台之第二承載面的第二預定位置之間作動。於此,當晶粒具有旋轉偏移量時,擺臂可根據預定旋轉量以及旋轉校正量作動,來補償晶粒之旋轉偏移量,並旋轉至第一承載面時可自晶粒之目標點吸取晶粒且將晶粒一至第二承載面之放置點上來置放晶粒。In view of this, an embodiment of the present invention provides a die detecting apparatus, including a first picking platform, an image capturing device, a second picking platform, a correcting module, and a transfer mechanism. The first access platform has a first bearing surface, and the first bearing surface can be used to carry the die. The imaging device has an imaging lens, and the imaging device is disposed above the first bearing surface with the imaging lens facing the first bearing surface. Here, the camera device can be used to capture an image of the die. The second access platform has a second bearing surface. The transfer mechanism is located between the first take-up platform and the second take-up platform. The calibration module is coupled to the camera device. The correction module can be used to calculate the target point of the die and the rotation offset according to the image of the die, and calculate the rotation correction amount according to the rotation offset. The transfer mechanism is coupled to the correction module and located between the first take-up platform and the second take-up platform. The transfer mechanism can include a seat body, a swing arm, and a pick and place nozzle. Wherein, the swing arm has a first end and a second end opposite to the first end, wherein the swing arm is connected to the base body with the first end thereof, and the swing arm can be rotated at the first end thereof Between a bearing surface and a second bearing surface. The pick and place nozzle is located at the second end of the swing arm. Wherein, the swing arm can have a predetermined amount of rotation as its preset rotation amount, so that the swing arm can be at the first predetermined position of the first bearing surface of the first pick-up platform and the second bearing surface of the second pick-up platform Actuated between the second predetermined positions. Here, when the die has a rotational offset, the swing arm can be actuated according to the predetermined amount of rotation and the rotation correction amount to compensate the rotational offset of the die, and can be self-oriented from the die when rotated to the first bearing surface. The die is sucked and the die is placed at a placement point from the die to the second load bearing surface.

本發明之一實施例中提供一種晶粒傳送方法,包含:擷取晶粒之影像;根據影像計算晶粒之目標點與旋轉偏移量;根據旋轉偏移量計算旋轉校正量;以及根據預定旋轉量與旋轉校正量驅動擺臂,以補償晶粒之旋轉偏移量,並使得擺臂可在第一承載面自晶粒之目標點吸取晶粒且將晶粒自第一承載面移至第二承載面之放置點上來放置晶粒。An embodiment of the present invention provides a die transfer method, comprising: capturing an image of a die; calculating a target point and a rotation offset of the die according to the image; calculating a rotation correction amount according to the rotation offset; and The amount of rotation and the amount of rotation correction drive the swing arm to compensate for the rotational offset of the die and allow the swing arm to pick up the die from the target point of the die on the first load bearing surface and move the die from the first load bearing surface to A die is placed at a placement point of the second bearing surface.

綜上所述,根據本發明一實施例之晶粒檢測裝置與晶粒傳送方法,透過驅動擺臂根據預定旋轉量與旋轉校正量進行作動,來補償晶粒之旋轉偏移量,以提升晶粒自第一承載面移送至第二承載面之放置點上的傳送速率以及檢測速率,進而可降低整體之生產成本。In summary, the die detecting device and the die transfer method according to an embodiment of the present invention act to compensate the rotation offset of the die by actuating the swing arm according to a predetermined amount of rotation and a rotation correction amount to enhance the crystal. The transfer rate and the detection rate of the particles transferred from the first bearing surface to the placement point of the second bearing surface, thereby reducing the overall production cost.

以下在實施方式中詳細敘述本發明之詳細特徵及優點,其內容足以使任何熟習相關技藝者瞭解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。The detailed features and advantages of the present invention are described in detail in the embodiments of the present invention. The objects and advantages associated with the present invention can be readily understood by those skilled in the art.

請參閱第1圖與第2圖,晶粒檢測裝置100包含至少二取置平台(以下分別稱之為第一取置平台110與第二取置平台120)、攝像裝置130、校正模組150與至少一移載機構140。以下,是以二取置平台110、120與一移載機構140為例來進行說明,然而本發明並非以此為限,取置平台之數量與移載機構之數量端視使用需求而定。例如,取置平台之數量可為3個,移載機構之數量可為2個,且此二移載機構與三取置平台係分別間隔排列。Referring to FIG. 1 and FIG. 2 , the die detecting device 100 includes at least two positioning platforms (hereinafter referred to as a first positioning platform 110 and a second receiving platform 120 respectively), an imaging device 130, and a calibration module 150. And at least one transfer mechanism 140. In the following, the two loading platforms 110 and 120 and a transfer mechanism 140 are taken as an example. However, the present invention is not limited thereto, and the number of the loading platforms and the number of the transfer mechanisms depend on the use requirements. For example, the number of the access platforms may be three, and the number of the transfer mechanisms may be two, and the two transfer mechanisms are arranged at intervals from the three access platforms.

第一取置平台110可包含第一置放部112,且第一置放部112具有可用以承載晶粒C1的第一承載面110a。The first access platform 110 can include a first placement portion 112, and the first placement portion 112 has a first bearing surface 110a that can be used to carry the die C1.

在本實施例中,第一置放部112可為晶圓環,而由於晶圓環一般係為中空框體結構而具有一窗口,故晶圓環之底部可黏貼有軟性薄膜,例如:藍膜(blue tape),以便於此軟性薄膜上放置已完成晶圓切割且待測試的晶粒C1,而此時之第一承載面110a係指軟性薄膜之表面。此外,第一取置平台110更可包含頂針機構(圖未示),設置於第一置放部112之窗口的下方。於此,頂針機構可透過移位組件(圖未示)協助移動,以由下往上頂之方式協助移載機構140之取放吸嘴143揀取位於軟性薄膜上之晶粒C1。然而,本發明不以此為限,第一置放部112可為一實體平台,第一承載面110a即為實體平台之上表面,且晶粒C1或貼片晶圓係可直接置放於第一置放部112之第一承載面110a上。於此,貼片晶圓係指切割後之晶圓以及用於晶圓貼附之軟性薄膜的組合。In this embodiment, the first placement portion 112 can be a wafer ring, and since the wafer ring is generally a hollow frame structure and has a window, a soft film can be adhered to the bottom of the wafer ring, for example, blue. A blue tape is placed on the flexible film to place the crystal grain C1 which has been subjected to wafer cutting and to be tested, and at this time, the first bearing surface 110a refers to the surface of the soft film. In addition, the first positioning platform 110 further includes a ejector mechanism (not shown) disposed below the window of the first placement portion 112. Here, the ejector mechanism can be assisted to move through the shifting assembly (not shown) to assist the pick-and-place nozzle 143 of the transfer mechanism 140 to pick up the crystal grain C1 on the flexible film from bottom to top. However, the present invention is not limited thereto. The first placement portion 112 can be a physical platform, and the first bearing surface 110a is the upper surface of the physical platform, and the die C1 or the patch wafer can be directly placed on the substrate. The first placement surface 112 of the first placement portion 112 is on the first bearing surface 110a. Here, the patch wafer refers to a combination of the diced wafer and the flexible film for wafer attachment.

此外,需注意的是一般所述之晶粒C1之面積或體積非常微小。為了方便顯示及說明,在本發明之圖式中的所有晶粒C1與晶粒檢測裝置100間的比例大小可能與實際上之比例不符,於此僅作為參考而非用以限制本發明。在一實際例子中,晶粒C1的大小可約略等於或僅略大於後述之取放吸嘴143的大小。In addition, it should be noted that the area or volume of the crystal C1 generally described is very small. For ease of illustration and description, the ratio of the ratio of all of the dies C1 to the dies of the dies in the drawings of the present invention may be inconsistent with the actual ratio, which is for reference only and is not intended to limit the invention. In a practical example, the size of the crystal grain C1 may be approximately equal to or only slightly larger than the size of the pick-and-place nozzle 143 to be described later.

同樣地,第二取置平台120可包含第二置放部122,且第二置放部122具有可用以承載晶粒C1的第二承載面120a。在本實施例中,第二置放部122可為晶圓環,而由於晶圓環一般係為中空框體,故晶圓環之底部可黏貼有軟性薄膜,例如:藍膜,以便於此軟性薄膜上放置晶粒C1,其中,此時之第二承載面120a係指軟性薄膜。然而本發明不以此為限,第二置放部122可為一實體平台,第二承載面120a即為實體平台之上表面,且晶粒C1係可直接置放於第二置放部122之第二承載面120a上。此外,第二置放部122之第二承載面120a上可先貼附有軟性薄膜,以避免放置於第二承載面120a上之晶粒C1受到外界干擾而有所移位或轉動。Likewise, the second access platform 120 can include a second placement portion 122, and the second placement portion 122 has a second bearing surface 120a that can be used to carry the die C1. In this embodiment, the second placement portion 122 can be a wafer ring, and since the wafer ring is generally a hollow frame, a soft film such as a blue film can be adhered to the bottom of the wafer ring. The crystal grain C1 is placed on the flexible film, wherein the second bearing surface 120a at this time means a soft film. However, the present invention is not limited thereto. The second placement portion 122 can be a physical platform, the second bearing surface 120a is the upper surface of the physical platform, and the die C1 can be directly placed on the second placement portion 122. On the second bearing surface 120a. In addition, a soft film may be attached to the second bearing surface 120a of the second placing portion 122 to prevent the crystal grain C1 placed on the second bearing surface 120a from being displaced or rotated by external interference.

在本實施例中,上述之第一取置平台110與第二取置平台120可以XYZ滑台(XYZ-table)及T軸機構 (T-table)來實現,第一取置平台110與第二取置平台120可於水平面(即XY平面)上移動,也可透過升降結構而沿垂直於水平面之Z軸移動,此外,也可以透過旋轉軸心方式進行T軸移動。然而,本發明並非以此為限,第一取置平台110與第二取置平台120可以上述的各軸作排列組合實現。In this embodiment, the first access platform 110 and the second access platform 120 can be implemented by an XYZ-table and a T-table, and the first access platform 110 and the first The two-position platform 120 can be moved on a horizontal plane (ie, an XY plane), or can move along a Z-axis perpendicular to a horizontal plane through a lifting structure, and can also perform T-axis movement through a rotating axis. However, the present invention is not limited thereto, and the first accommodating platform 110 and the second accommodating platform 120 may be implemented by arranging and combining the above-mentioned respective axes.

攝像裝置130具有攝像鏡頭131,且攝像裝置130可以其攝像鏡頭131朝向第一承載面110a以擷取位於第一承載面110a上之晶粒C1的影像S1。在另一實施例中,攝像裝置130亦可以其攝像鏡頭131朝向第二承載面120a以擷取位於第二承載面120a上之晶粒C1的影像。於此,攝像裝置130可為照相機、攝影機、或CCD(charge-coupled device)相機等。The imaging device 130 has an imaging lens 131, and the imaging device 130 can have its imaging lens 131 facing the first bearing surface 110a to capture the image S1 of the crystal C1 on the first bearing surface 110a. In another embodiment, the imaging device 130 may also face the imaging lens 131 toward the second bearing surface 120a to capture an image of the crystal C1 on the second bearing surface 120a. Here, the imaging device 130 may be a camera, a camera, or a CCD (charge-coupled device) camera or the like.

校正模組150耦接至攝像裝置130,並接收來自攝像裝置130所擷取的影像S1。在本實施例中,校正模組150可用以根據攝像裝置130所擷取的影像S1計算出晶粒C1的一目標點T1,且可根據影像S1與原先設定之預設畫面來判斷晶粒C1是否出現旋轉現象,並可根據判斷之結果來計算出晶粒C1之旋轉偏移量,進而可再根據計算出之旋轉偏移量產生對應之旋轉校正量S2。在一實施例中,校正模組150係透過影像分析技術來計算出所需之目標點T1與旋轉校正量S2。於此,目標點T1係為晶粒C1上用以供後述之移載機構140上之取放吸嘴143對準之用。在本實施例中,校正模組150可直接以晶粒C1之中心點作為所述之目標點T1,然本發明不以此為限。The calibration module 150 is coupled to the camera 130 and receives the image S1 captured by the camera 130. In this embodiment, the correction module 150 can be used to calculate a target point T1 of the die C1 according to the image S1 captured by the camera 130, and can determine the die C1 according to the image S1 and the preset preset image. Whether or not a rotation phenomenon occurs, and the rotation offset amount of the crystal grain C1 can be calculated based on the result of the judgment, and the corresponding rotation correction amount S2 can be generated based on the calculated rotation offset amount. In one embodiment, the calibration module 150 calculates the desired target point T1 and the rotation correction amount S2 by image analysis techniques. Here, the target point T1 is used for aligning the pick-and-place nozzle 143 on the transfer mechanism 140 to be described later on the die C1. In this embodiment, the correction module 150 can directly use the center point of the die C1 as the target point T1, but the invention is not limited thereto.

於此,校正模組150可運用軟體程式搭配處理器來實現。Here, the correction module 150 can be implemented by using a software program and a processor.

移載機構140位於第一取置平台110與第二取置平台120之間。在本實施例中,移載機構140包含座體141、擺臂142以及取放吸嘴143。擺臂142包含具有相對之二端(以下分別稱之為第一端與第二端)。其中,擺臂142係以其第一端連接於座體141,並以此第一端作為其轉動之軸心,而取放吸嘴143則位於擺臂142之第二端。因此,移載機構140之擺臂142可於第一取置平台110至第二取置平台120之範圍間轉動,且透過取放吸嘴143將晶粒C1自第一取置平台110吸起並移置到第二取置平台120之第二承載面120a上的一放置點P1。The transfer mechanism 140 is located between the first access platform 110 and the second access platform 120. In the present embodiment, the transfer mechanism 140 includes a seat body 141, a swing arm 142, and a pick-and-place nozzle 143. The swing arm 142 includes two opposite ends (hereinafter referred to as a first end and a second end, respectively). The swing arm 142 is connected to the base 141 with its first end, and the first end serves as the axis of rotation thereof, and the pick-and-place nozzle 143 is located at the second end of the swing arm 142. Therefore, the swing arm 142 of the transfer mechanism 140 can rotate between the first pick-up platform 110 and the second pick-up platform 120, and the die C1 is sucked from the first pick-up platform 110 through the pick-and-place nozzle 143. And a placement point P1 on the second bearing surface 120a of the second access platform 120 is displaced.

在本實施例中,移載機構140可包含真空泵(圖未示),真空泵可透過管線連通至位於擺臂142之第二端的取放吸嘴143,以使取放吸嘴143具有真空吸引之功能。In this embodiment, the transfer mechanism 140 may include a vacuum pump (not shown), and the vacuum pump may be connected to the pick-and-place nozzle 143 at the second end of the swing arm 142 through the pipeline, so that the pick-and-place nozzle 143 has vacuum suction. Features.

此外,移載機構140可耦接至校正模組150,以根據校正模組150所產生之旋轉校正量S2以及對應於晶粒C1在第一承載面110a之位置的一預定旋轉量S3來驅動擺臂142進行相應之旋轉動作,並將晶粒C1自第一取置平台110移置到第二取置平台120。其中,移載機構140之詳細作動將留待後述。In addition, the transfer mechanism 140 can be coupled to the correction module 150 to be driven according to the rotation correction amount S2 generated by the correction module 150 and a predetermined rotation amount S3 corresponding to the position of the die C1 at the first bearing surface 110a. The swing arm 142 performs a corresponding rotating motion and displaces the die C1 from the first picking platform 110 to the second picking platform 120. The detailed operation of the transfer mechanism 140 will be described later.

於此,預定旋轉量S3係指晶粒C1於不具有旋轉偏移量時,擺臂142於第一承載面110a之第一預定位置與第二承載面120a之第二預定位置之間轉動所需之轉動量。其中,第一預定位置即為晶粒C1在第一承載面110a上之初始位置,第二預定位置則為晶粒C1在第二承載面120a上之預定的放置點P1。Here, the predetermined rotation amount S3 means that the crystal grain C1 rotates between the first predetermined position of the first bearing surface 110a and the second predetermined position of the second bearing surface 120a when the crystal grain C1 does not have the rotational offset amount. The amount of rotation required. The first predetermined position is the initial position of the die C1 on the first bearing surface 110a, and the second predetermined position is the predetermined placement point P1 of the die C1 on the second carrying surface 120a.

晶粒檢測裝置100更可包含水平位移機構160,耦接至校正模組150。在本實施例中,當擺臂142為吸起晶粒C1而移動至第一取置平台110時,水平位移機構160可根據校正模組150所產生之目標點T1來調整位於第一取置平台110之第一承載面110a上之晶粒C1與擺臂142的相對位置,以使擺臂142旋轉至第一取置平台110之第一承載面110a後,位於擺臂142上之取放吸嘴143可對準於晶粒C1的目標點T1並自此目標點T1吸起晶粒C1。The die detecting device 100 further includes a horizontal displacement mechanism 160 coupled to the calibration module 150. In this embodiment, when the swing arm 142 moves to the first pick-up platform 110 for sucking up the die C1, the horizontal displacement mechanism 160 can adjust the first position according to the target point T1 generated by the correction module 150. The relative position of the die C1 and the swing arm 142 on the first bearing surface 110a of the platform 110 is such that the swing arm 142 is rotated to the first bearing surface 110a of the first pick-up platform 110, and is placed on the swing arm 142. The suction nozzle 143 can be aligned with the target point T1 of the crystal grain C1 and suck the crystal grain C1 from this target point T1.

在一實施態樣中,水平位移機構160可設置於第一取置平台110下,以帶動第一取置平台110進行移位來改變晶粒C1與擺臂142的相對位置。然而,本發明並非以此為限,在另一實施態樣中,水平位移機構160可設置於移載機構140下,以帶動移載機構140進行移位來改變晶粒C1與擺臂142的相對位置。In one embodiment, the horizontal displacement mechanism 160 can be disposed under the first accommodating platform 110 to drive the first accommodating platform 110 to shift to change the relative positions of the crystal C1 and the swing arm 142. However, the present invention is not limited thereto. In another embodiment, the horizontal displacement mechanism 160 may be disposed under the transfer mechanism 140 to drive the transfer mechanism 140 to shift to change the die C1 and the swing arm 142. relative position.

而當擺臂142為擺放晶粒C1而移動至第二取置平台120時,水平位移機構160亦可根據預存於校正模組150中之一放置點P1來調整位於擺臂142上之取放吸嘴143與第二取置平台120的相對位置,以使擺臂142旋轉至第二取置平台120之第二承載面120a後,位於擺臂142上之取放吸嘴143可將晶粒C1放置於第二承載面120a之放置點P1上。When the swing arm 142 is moved to the second take-up platform 120 for placing the die C1, the horizontal displacement mechanism 160 can also adjust the position on the swing arm 142 according to the placement point P1 pre-stored in the correction module 150. After the relative position of the suction nozzle 143 and the second receiving platform 120 is rotated to rotate the swing arm 142 to the second bearing surface 120a of the second receiving platform 120, the pick-and-place nozzle 143 located on the swing arm 142 can be crystallized. The pellet C1 is placed on the placement point P1 of the second bearing surface 120a.

在一實施態樣中,水平位移機構160可設置於移載機構140下,以帶動移載機構140進行移位來改變取放吸嘴143與第二取置平台120的相對位置。然而,本發明並非以此為限,在另一實施態樣中,水平位移機構160可設置於第二取置平台120下,以帶動第二取置平台120進行移位來改變取放吸嘴143與第二取置平台120的相對位置。In one embodiment, the horizontal displacement mechanism 160 can be disposed under the transfer mechanism 140 to drive the transfer mechanism 140 to shift to change the relative position of the pick-and-place nozzle 143 and the second pick-up platform 120. However, the present invention is not limited thereto. In another embodiment, the horizontal displacement mechanism 160 can be disposed under the second positioning platform 120 to drive the second positioning platform 120 to shift to change the pick-and-place nozzle. The relative position of the 143 and the second access platform 120.

請參閱第1圖至第4圖,本實施例之晶粒傳送方法主要係透過驅動晶粒檢測裝置100之擺臂142來根據預定旋轉量S3與旋轉校正量S2進行旋轉動作,以補償晶粒C1之旋轉偏移量,並搭配驅動水平位移機構160進行水平移動,以將晶粒C1自第一取置平台110移放至第二取置平台102。由於在本實施例之晶粒傳送方法中,所有之旋轉作動皆係由擺臂142來完成,故相較於習知藉由取置平台來進行轉動作動之晶粒傳送方法,更可提昇整體之傳送與檢測速率。Referring to FIG. 1 to FIG. 4, the die transfer method of the present embodiment mainly performs a rotation operation according to a predetermined rotation amount S3 and a rotation correction amount S2 by driving the swing arm 142 of the die detecting device 100 to compensate the die. The rotational offset of C1 is horizontally moved in conjunction with the drive horizontal displacement mechanism 160 to move the die C1 from the first take-up platform 110 to the second take-up platform 102. In the die transfer method of the embodiment, all the rotations are performed by the swing arm 142, so that the whole die transfer method can be improved compared with the conventional die transfer method by the pick-up platform. Transmission and detection rate.

本發明一實施例之晶粒傳送方法包含擷取晶粒C1之影像S1(步驟S11)、根據影像S1計算晶粒C1之目標點T1與旋轉偏移量(步驟S12)、根據旋轉偏移量計算旋轉校正量S2(步驟S13)、以及根據預定旋轉量S3與旋轉校正量S2驅動擺臂142,以補償晶粒C1之旋轉偏移量,並使擺臂142可將晶粒C1自第一承載面110a移至第二承載面120a之放置點P1(步驟S14)。The die transfer method according to an embodiment of the present invention includes capturing the image S1 of the die C1 (step S11), calculating the target point T1 of the die C1 and the rotation offset according to the image S1 (step S12), according to the rotation offset Calculating the rotation correction amount S2 (step S13), and driving the swing arm 142 according to the predetermined rotation amount S3 and the rotation correction amount S2 to compensate the rotation offset amount of the crystal grain C1, and allowing the swing arm 142 to take the crystal grain C1 from the first The bearing surface 110a is moved to the placement point P1 of the second bearing surface 120a (step S14).

在步驟S11中,晶粒檢測裝置100可透過位於第一取置平台110上方之攝像裝置130對位於第一取置平台110之第一承載面110a上的晶粒C1或貼片晶圓(切割後之晶圓以及用於晶圓貼附之軟性薄膜的組合)擷取影像S1。In step S11, the die detecting device 100 can pass the die C1 or the chip wafer on the first bearing surface 110a of the first picking platform 110 through the camera device 130 located above the first picking platform 110 (cutting The subsequent wafer and the combination of the flexible film for wafer attachment) capture image S1.

在步驟S12中,晶粒檢測裝置100可透過校正模組150根據攝像裝置130所擷取到之影像S1找到所需之目標點T1的位置,並將影像S1與預設影像資訊進行比較,以判斷並計算出晶粒C1的旋轉偏移量。於此,校正模組150係以晶粒C1之中心點作為目標點T1,然而本發明並不以此為限。In step S12, the die detecting device 100 can find the position of the desired target point T1 according to the image S1 captured by the camera 130 through the correction module 150, and compare the image S1 with the preset image information to The rotation offset of the crystal grain C1 is judged and calculated. Here, the correction module 150 takes the center point of the crystal grain C1 as the target point T1, but the invention is not limited thereto.

請參閱第4圖,實線用以繪示晶粒C1於攝像裝置130擷取影像S1時所呈現的一態樣,且虛線用以繪示晶粒C1’原本應該呈現的態樣。因此,在一實施態樣中,校正模組150可透過將實線所示之晶粒C1與虛線所示之晶粒C1’比較而得知晶粒C1的旋轉偏移量或直接藉由影像分析技術對影像S1進行分析來獲取所需之目標點T1與旋轉偏移量。Referring to FIG. 4, a solid line is used to illustrate a state in which the crystal grain C1 is captured by the image capturing device 130, and a broken line is used to illustrate the aspect in which the crystal grain C1' should originally be presented. Therefore, in an embodiment, the correction module 150 can know the rotation offset of the crystal C1 by directly comparing the crystal C1 shown by the solid line with the crystal C1' indicated by the broken line or directly by the image. The analysis technique analyzes the image S1 to obtain the desired target point T1 and the rotational offset.

在步驟S13中,晶粒檢測裝置100可透過校正模組150根據其計算出的旋轉偏移量來產生對應之旋轉校正量S2。In step S13, the die detecting device 100 can generate a corresponding rotation correction amount S2 according to the calculated rotation offset amount through the correction module 150.

舉例而言,假若校正模組150根據影像S1所得之旋轉偏移量為+30度(即晶粒C1相對於晶粒C1’順時鐘偏移了30度)時,校正模組150可根據旋轉偏移量,即+30度,計算出旋轉校正量S2為-30度。For example, if the correction module 150 obtains a rotation offset of +30 degrees according to the image S1 (ie, the die C1 is shifted by 30 degrees with respect to the die C1'), the correction module 150 can be rotated according to the rotation. The offset amount, that is, +30 degrees, is calculated as the rotation correction amount S2 being -30 degrees.

在步驟S14中,晶粒檢測裝置100之移載機構140的擺臂142可根據於步驟S13中所得到之旋轉校正量S2與預設之預定旋轉量S3進行相應之旋轉動作,以補償晶粒C1之旋轉偏移量,並使得擺臂142旋轉至第一取置平台110時可自晶粒C1之目標點T1將晶粒C1從第一承載面110a上吸起,並可將晶粒C1移置於第二取置平台120之第二承載面120a的放置點P1上(如第6圖至第14圖所示)。In step S14, the swing arm 142 of the transfer mechanism 140 of the die detecting device 100 can perform a corresponding rotating action according to the rotation correction amount S2 obtained in step S13 and the predetermined predetermined rotation amount S3 to compensate the die. The rotation offset of C1, and when the swing arm 142 is rotated to the first take-up platform 110, the crystal grain C1 can be sucked from the first bearing surface 110a from the target point T1 of the die C1, and the die C1 can be The displacement is placed on the placement point P1 of the second bearing surface 120a of the second access platform 120 (as shown in FIGS. 6 to 14).

其中,預定旋轉量S3是指晶粒C1於不具有旋轉偏移量時(如第4圖C1’),擺臂142將晶粒C1自第一承載面110a之第一預定位置(即,初始位置)移動至第二承載面120a之第二預定位置(即,放置點)的所需旋轉角度。在第一承載面110a上,擺臂142會通過晶粒C1的下側邊到晶粒C1的目標點T1將晶粒C1取起,在晶粒C1不具有旋轉偏移量的狀態下,擺臂142與晶粒C1的下側邊之間具有一夾角θ,如第5圖所示。Wherein, the predetermined rotation amount S3 means that the crystal grain C1 does not have a rotation offset amount (as shown in FIG. 4C1'), and the swing arm 142 takes the crystal grain C1 from the first predetermined position of the first bearing surface 110a (ie, the initial position) Position) a desired rotation angle that is moved to a second predetermined position (ie, a placement point) of the second bearing surface 120a. On the first bearing surface 110a, the swing arm 142 picks up the crystal grain C1 through the lower side of the crystal grain C1 to the target point T1 of the crystal grain C1, and the crystal grain C1 does not have a rotational offset. The arm 142 has an included angle θ with the lower side of the die C1 as shown in FIG.

在本發明之一實施態樣中,擺臂142可於欲旋轉至第一承載面110a之第一預定位置時,進行對晶粒C1之旋轉偏移量的補償,而依據預定旋轉量S3與校正模組150所產生之旋轉校正量S2旋轉至第一承載面110a。此外,在本實施態樣中,更透過水平位移機構160依據校正模組150所輸出之目標點T1來調整晶粒C1與擺臂142之相對位置,以使擺臂142於依據預定旋轉量S3與旋轉校正量S2旋轉至第一承載面110a時,位於擺臂142之一端的取放吸嘴143可對準於晶粒C1之目標點T1並自此目標點T1將晶粒C1吸起。此狀態下,在第一承載面110a上,擺臂142與晶粒C1的下側邊之間具有一夾角θ1,如第7圖所示,且夾角θ1與前述的夾角θ相同。In an embodiment of the present invention, the swing arm 142 can compensate for the rotational offset of the die C1 when the first predetermined position of the first bearing surface 110a is to be rotated, and according to the predetermined rotation amount S3 and The rotation correction amount S2 generated by the correction module 150 is rotated to the first bearing surface 110a. In addition, in the embodiment, the horizontal displacement mechanism 160 adjusts the relative position of the die C1 and the swing arm 142 according to the target point T1 output by the correction module 150, so that the swing arm 142 is based on the predetermined rotation amount S3. When the rotation correction amount S2 is rotated to the first bearing surface 110a, the pick-and-place nozzle 143 located at one end of the swing arm 142 can be aligned with the target point T1 of the crystal grain C1 and suck the crystal grain C1 from the target point T1. In this state, on the first bearing surface 110a, the swing arm 142 has an angle θ1 with the lower side of the crystal grain C1 as shown in Fig. 7, and the included angle θ1 is the same as the aforementioned angle θ.

舉例而言,假設預定旋轉量為150度且旋轉校正量為-30度時,擺臂142可於旋轉至第一承載面110a時便減少30度之旋轉角,換言之,擺臂142於第一承載面110a與第二承載面120a之間的轉動量將從150度更改為120度,以補償晶粒C1之旋轉偏移量,並且搭配水平位移機構160依據目標點T1來調整晶粒C1與擺臂142之相對位置,而使得位於擺臂142上之取放吸嘴143可對準於晶粒C1之目標點T1並吸起晶粒C1,如第6圖、第9圖所示。接續,於吸起晶粒C1後,移載機構140之擺臂142可再次根據旋轉校正量S2與預定旋轉量S3攜載著晶粒C1旋轉至第二承載面120a,即旋轉120度至第二承載面120a,以將晶粒C1置放於第二承載面120a之放置點P1上,如第7圖、第10圖所示。For example, if the predetermined rotation amount is 150 degrees and the rotation correction amount is -30 degrees, the swing arm 142 can reduce the rotation angle of 30 degrees when rotating to the first bearing surface 110a, in other words, the swing arm 142 is first. The amount of rotation between the bearing surface 110a and the second bearing surface 120a will be changed from 150 degrees to 120 degrees to compensate for the rotational offset of the die C1, and the horizontal displacement mechanism 160 adjusts the die C1 according to the target point T1. The relative position of the swing arm 142 is such that the pick-and-place nozzle 143 on the swing arm 142 can be aligned with the target point T1 of the die C1 and suck the die C1 as shown in FIGS. 6 and 9. Then, after the die C1 is sucked up, the swing arm 142 of the transfer mechanism 140 can again rotate the lens C1 to the second bearing surface 120a according to the rotation correction amount S2 and the predetermined rotation amount S3, that is, rotate 120 degrees to the first The two bearing surfaces 120a are arranged to place the crystal grains C1 on the placement point P1 of the second bearing surface 120a, as shown in FIGS. 7 and 10.

在本實施態樣中,水平位移機構160可設置於移載機構140或第一取置平台110,以帶動移載機構140或第一取置平台110進行移位來改變晶粒C1與擺臂142的相對位置。於此,水平位移機構160可與擺臂142同時作動,然而本發明並非以此為限,水平位移機構160亦可與擺臂142分別依序作動。In this embodiment, the horizontal displacement mechanism 160 can be disposed on the transfer mechanism 140 or the first access platform 110 to drive the transfer mechanism 140 or the first access platform 110 to shift to change the die C1 and the swing arm. The relative position of 142. Here, the horizontal displacement mechanism 160 can be operated simultaneously with the swing arm 142. However, the present invention is not limited thereto, and the horizontal displacement mechanism 160 can also be sequentially operated with the swing arm 142.

然而本發明並非以此為限,在另一實施態樣中,擺臂142亦可於吸起晶粒C1後欲旋轉至第二承載面120a之第二預定位置時,再進行對晶粒C1之旋轉偏移量的補償,而依據預定旋轉量S3與旋轉校正量S2旋轉至第二承載面120a。而在本實施態樣中,水平位移機構160更依據預存之放置點P1來調整位於擺臂142上之取放吸嘴143與第二承載面120a之相對位置,以使擺臂142於依據預定旋轉量S3與旋轉校正量S2旋轉至第二承載面120a時,可將晶粒C1放置於第二承載面120a之放置點P1上。此狀態下,在第一承載面110a上,擺臂142與晶粒C1的下側邊之間具有一夾角θ2,如第12圖所示,且夾角θ2與前述的夾角θ不同。However, the present invention is not limited thereto. In another embodiment, the swing arm 142 may also be rotated to the second predetermined position of the second bearing surface 120a after picking up the die C1, and then performing the die C1. The rotation offset is compensated, and is rotated to the second bearing surface 120a according to the predetermined rotation amount S3 and the rotation correction amount S2. In the embodiment, the horizontal displacement mechanism 160 adjusts the relative position of the pick-and-place nozzle 143 and the second bearing surface 120a on the swing arm 142 according to the pre-stored placement point P1, so that the swing arm 142 is predetermined. When the rotation amount S3 and the rotation correction amount S2 are rotated to the second bearing surface 120a, the crystal grain C1 can be placed on the placement point P1 of the second bearing surface 120a. In this state, on the first bearing surface 110a, the swing arm 142 has an angle θ2 with the lower side of the crystal grain C1 as shown in Fig. 12, and the included angle θ2 is different from the aforementioned angle θ.

舉例而言,假設預定旋轉量為150度且旋轉校正量為-30度時,擺臂142可先依據預定旋轉量為150度旋轉至第一承載面110a以將晶粒C1自第一承載面110a吸起,如第11圖所示,之後於旋轉至第二承載面120a時再減少30度之旋轉角以補償C1之旋轉偏移量,並且搭配水平位移機構160依據放置點P1來調整取放吸嘴143與第二承載面120a之相對位置,而使得擺臂142所攜載之晶粒C1可置放於第二承載面120a之放置點P1上,如第13圖與第14圖所示。For example, assuming that the predetermined rotation amount is 150 degrees and the rotation correction amount is -30 degrees, the swing arm 142 may first rotate to the first bearing surface 110a according to a predetermined rotation amount of 150 degrees to drive the crystal grain C1 from the first bearing surface. 110a is sucked up, as shown in Fig. 11, and then rotated by 30 degrees to reduce the rotational offset of C1 when rotated to the second bearing surface 120a, and adjusted with the horizontal displacement mechanism 160 according to the placement point P1. The relative position of the suction nozzle 143 and the second bearing surface 120a is such that the die C1 carried by the swing arm 142 can be placed on the placement point P1 of the second bearing surface 120a, as shown in FIGS. 13 and 14. Show.

在本實施態樣中,水平位移機構160可設置於移載機構140或第二取置平台120,以帶動移載機構140或第二取置平台120進行移位來改變取放吸嘴143與第二承載面120a之相對位置。於此,水平位移機構160可與擺臂142同時作動,然而本發明並非以此為限,水平位移機構160亦可與擺臂142分別依序作動。In this embodiment, the horizontal displacement mechanism 160 can be disposed on the transfer mechanism 140 or the second access platform 120 to drive the transfer mechanism 140 or the second access platform 120 to shift to change the pick-and-place nozzle 143 and The relative position of the second bearing surface 120a. Here, the horizontal displacement mechanism 160 can be operated simultaneously with the swing arm 142. However, the present invention is not limited thereto, and the horizontal displacement mechanism 160 can also be sequentially operated with the swing arm 142.

在又一實施態樣中,擺臂142可分別於欲旋轉至第一承載面110a之第一預定位置以及欲旋轉至第二承載面120a之第二預定位置,對晶粒C1之旋轉偏移量進行補償。因此,在本實施態樣中,校正模組150所產生之旋轉校正量S2可依據一比例分配,例如1:2或1:3來分成第一旋轉校正分量與第二旋轉校正分量。In still another embodiment, the swing arm 142 can be rotated about the rotation of the die C1 at a first predetermined position to be rotated to the first bearing surface 110a and a second predetermined position to be rotated to the second bearing surface 120a, respectively. The amount is compensated. Therefore, in this embodiment, the rotation correction amount S2 generated by the correction module 150 may be divided into a first rotation correction component and a second rotation correction component according to a proportional distribution, for example, 1:2 or 1:3.

其中,擺臂142可依據預定旋轉量S3與第一旋轉校正分量旋轉至第一承載面110a,且搭配水平位移機構160依據目標點T1來調整晶粒C1與擺臂142之相對位置,以使擺臂142於旋轉至第一承載面110a時,位於擺臂142之一端的取放吸嘴143可對準於晶粒C1之目標點T1並自此目標點T1將晶粒C1吸起。之後,擺臂142可依據預定旋轉量S3與第二旋轉校正分量旋轉至第二承載面120a,且搭配水平位移機構160依據預存之放置點P1來調整位於擺臂142上之取放吸嘴143與第二承載面120a之相對位置,以使擺臂142於旋轉至第二承載面120a時,可將晶粒C1放置於第二承載面120a之放置點P1上。The swing arm 142 can be rotated to the first bearing surface 110a according to the predetermined rotation amount S3 and the first rotation correction component, and the horizontal displacement mechanism 160 adjusts the relative position of the crystal grain C1 and the swing arm 142 according to the target point T1, so that When the swing arm 142 is rotated to the first bearing surface 110a, the pick-and-place nozzle 143 at one end of the swing arm 142 can be aligned with the target point T1 of the die C1 and suck the die C1 from the target point T1. Thereafter, the swing arm 142 can be rotated to the second bearing surface 120a according to the predetermined rotation amount S3 and the second rotation correction component, and the horizontal displacement mechanism 160 adjusts the pick-and-place nozzle 143 located on the swing arm 142 according to the pre-stored placement point P1. The relative position of the second bearing surface 120a is such that when the swing arm 142 is rotated to the second bearing surface 120a, the die C1 can be placed on the placement point P1 of the second bearing surface 120a.

在本實施態樣中,水平位移機構160可設置於移載機構140、第一取置平台110及/或第二取置平台120,以帶動移載機構140、第一取置平台110及/或第二取置平台120進行移位。於此,水平位移機構160可與擺臂142同時作動,然而本發明並非以此為限,水平位移機構160亦可與擺臂142分別依序作動。In this embodiment, the horizontal displacement mechanism 160 can be disposed on the transfer mechanism 140, the first access platform 110, and/or the second access platform 120 to drive the transfer mechanism 140, the first access platform 110, and/or Or the second access platform 120 performs shifting. Here, the horizontal displacement mechanism 160 can be operated simultaneously with the swing arm 142. However, the present invention is not limited thereto, and the horizontal displacement mechanism 160 can also be sequentially operated with the swing arm 142.

綜合前述,根據本發明一實施例之晶粒檢測裝置與晶粒傳送方法,透過驅動擺臂根據預定旋轉量與旋轉校正量進行作動,來補償晶粒之旋轉偏移量,以提升晶粒自第一承載面移送至第二承載面之放置點上的傳送速率以及檢測速率,進而可降低整體之生產成本。In the foregoing, the die detecting device and the die transfer method according to an embodiment of the present invention, by driving the swing arm to operate according to a predetermined amount of rotation and a rotation correction amount, to compensate for a rotational offset of the die to improve the die self. The transfer rate of the first bearing surface to the placement point of the second bearing surface and the detection rate, which in turn reduces the overall production cost.

本發明之技術內容已以較佳實施例揭示如上述,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神所做些許之更動與潤飾,皆應涵蓋於本發明之範疇內,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。The technical contents of the present invention have been disclosed in the preferred embodiments as described above, and are not intended to limit the present invention. Any modifications and refinements made by those skilled in the art without departing from the spirit of the present invention should be The scope of the invention is therefore defined by the scope of the appended claims.

100‧‧‧晶粒檢測裝置100‧‧‧ grain inspection device

110‧‧‧第一取置平台110‧‧‧First access platform

110a‧‧‧第一承載面110a‧‧‧First bearing surface

112‧‧‧第一置放部112‧‧‧First Placement Department

120‧‧‧第二取置平台120‧‧‧Second access platform

120a‧‧‧第二承載面120a‧‧‧second bearing surface

122‧‧‧第二置放部122‧‧‧Second Placement Department

130‧‧‧攝像裝置130‧‧‧ camera

131‧‧‧攝像鏡頭131‧‧‧ camera lens

140‧‧‧移載機構140‧‧‧Transportation mechanism

141‧‧‧座體141‧‧‧ body

14‧‧‧擺臂14‧‧‧ swing arm

143‧‧‧取放吸嘴143‧‧‧Receiving nozzle

150‧‧‧校正模組150‧‧‧ calibration module

160‧‧‧水平位移機構160‧‧‧Horizontal displacement mechanism

T1‧‧‧目標點T1‧‧‧ target point

C1、C1’‧‧‧晶粒C1, C1’‧‧‧ grain

P1‧‧‧放置點P1‧‧‧ placement point

S1‧‧‧影像S1‧‧ images

S2‧‧‧旋轉校正量S2‧‧‧rotation correction

S3‧‧‧預定旋轉量S3‧‧‧ scheduled rotation

步驟S11‧‧‧擷取晶粒之影像Step S11‧‧‧ Capture the image of the die

步驟S12‧‧‧根據影像計算晶粒之目標點與旋轉偏移量Step S12‧‧‧ Calculate the target point and rotation offset of the die from the image

步驟S13‧‧‧根據旋轉偏移量計算旋轉校正量Step S13‧‧‧ Calculate the amount of rotation correction based on the rotation offset

步驟S14‧‧‧根據預定旋轉量與旋轉校正量驅動擺臂,以補償晶粒之旋轉偏移量,並使擺臂可將晶粒自第一承載面移至第二承載面之放置點Step S14‧‧‧ driving the swing arm according to the predetermined rotation amount and the rotation correction amount to compensate the rotation offset of the die, and the swing arm can move the die from the first bearing surface to the placement point of the second bearing surface

[第1圖]為本發明一實施例之晶粒檢測裝置的立體概要示意圖。 [第2圖]為本發明一實施例之晶粒檢測裝置的方塊概要示意圖。 [第3圖]為本發明第一實施例之晶粒傳送方法的流程概要示意圖。 [第4圖]為攝像裝置所擷取到之影像的概要示意圖。 [第5圖]為擺臂與不具旋轉偏移量之晶粒間所形成之夾角的概要示意圖。 [第6圖]為本發明一實施例之晶粒檢測裝置之作動的概要示意圖(一)。 [第7圖]為第6圖之局部放大示意圖。 [第8圖]為本發明一實施例之晶粒檢測裝置的作動概要示意圖(二)。 [第9圖]為本發明一實施例之晶粒檢測裝置的作動概要示意圖(三)。 [第10圖]為本發明一實施例之晶粒檢測裝置的作動概要示意圖(四)。 [第11圖]為本發明一實施例之晶粒檢測裝置的作動概要示意圖(五)。 [第12圖]為第11圖之局部放大示意圖。 [第13圖]為本發明一實施例之晶粒檢測裝置的作動概要示意圖(六)。 [第14圖]為本發明一實施例之晶粒檢測裝置的作動概要示意圖(七)。Fig. 1 is a schematic perspective view showing a crystal grain detecting apparatus according to an embodiment of the present invention. Fig. 2 is a schematic block diagram showing a crystal grain detecting apparatus according to an embodiment of the present invention. [Fig. 3] is a schematic flow chart showing a flow of a die transfer method according to a first embodiment of the present invention. [Fig. 4] is a schematic diagram showing an image captured by an image pickup apparatus. [Fig. 5] is a schematic view showing an angle formed between a swing arm and a crystal grain having no rotational offset. Fig. 6 is a schematic view (1) showing the operation of the die detecting device according to an embodiment of the present invention. [Fig. 7] is a partially enlarged schematic view of Fig. 6. [Fig. 8] Fig. 8 is a schematic view showing the operation of the die detecting device according to an embodiment of the present invention (2). [Fig. 9] Fig. 9 is a schematic view showing the operation of the die detecting device according to an embodiment of the present invention (3). [Fig. 10] Fig. 10 is a schematic view showing the operation of the die detecting device according to an embodiment of the present invention (4). [Fig. 11] Fig. 11 is a schematic view showing the operation of the die detecting device according to an embodiment of the present invention (5). [Fig. 12] is a partially enlarged schematic view of Fig. 11. [Fig. 13] Fig. 13 is a schematic view showing the operation of the die detecting device according to an embodiment of the present invention (6). Fig. 14 is a schematic view showing the operation of the die detecting device according to an embodiment of the present invention (7).

步驟S11‧‧‧擷取晶粒之影像 Step S11‧‧‧ Capture the image of the die

步驟S12‧‧‧根據影像計算晶粒之目標點與旋轉偏移量 Step S12‧‧‧ Calculate the target point and rotation offset of the die from the image

步驟S13‧‧‧根據旋轉偏移量計算旋轉校正量 Step S13‧‧‧ Calculate the amount of rotation correction based on the rotation offset

步驟S14‧‧‧根據預定旋轉量與旋轉校正量驅動擺臂,以補償晶粒之旋轉偏移量,並使擺臂可將晶粒自第一承載面移至第二承載面之放置點 Step S14‧‧‧ driving the swing arm according to the predetermined rotation amount and the rotation correction amount to compensate the rotation offset of the die, and the swing arm can move the die from the first bearing surface to the placement point of the second bearing surface

Claims (11)

一種晶粒檢測裝置,包含:一第一取置平台,具有一第一承載面,該第一承載面用以承載一晶粒;一攝像裝置,具有一攝像鏡頭,該攝像裝置以該攝像鏡頭朝向該第一承載面而設置於該第一承載面之上方,以擷取該晶粒之一影像;一第二取置平台,具有一第二承載面;一校正模組,耦接該攝像裝置,該校正模組根據該晶粒之該影像計算該晶粒之一目標點與一旋轉偏移量,且該校正模組根據該旋轉偏移量計算出一旋轉校正量;及一移載機構,耦接至該校正模組且位於該第一取置平台與該第二取置平台之間,該移載機構包含一座體、一擺臂與一取放吸嘴,該擺臂具有一第一端與相對於該第一端的一第二端,該擺臂以該第一端連接於該座體,該擺臂以該第一端為軸心而可旋轉於該第一承載面與該第二承載面之間,該取放吸嘴位於該第二端,該擺臂以一預定旋轉量為預設的旋轉量,使該擺臂在該第一承載面的一第一預定位置及該第二承載面的一第二預定位置之間作動;其中該擺臂根據該預定旋轉量及該旋轉校正量作動,以補償該晶粒之該旋轉偏移量,並在該第一承載面自該晶粒的該目標點吸取該晶粒且移至該第二承載面之一放置點上放置該晶粒。 A die detecting device includes: a first loading platform having a first bearing surface for carrying a die; an image capturing device having an image capturing lens, wherein the camera device uses the camera lens The first bearing surface is disposed above the first bearing surface to capture an image of the die; a second receiving platform has a second bearing surface; and a correction module coupled to the camera The correction module calculates a target point and a rotation offset of the die according to the image of the die, and the correction module calculates a rotation correction amount according to the rotation offset; and a transfer The mechanism is coupled to the calibration module and located between the first positioning platform and the second positioning platform, the transfer mechanism includes a body, a swing arm and a pick-and-place nozzle, the swing arm has a a first end and a second end opposite to the first end, the swing arm is coupled to the base body by the first end, and the swing arm is rotatable to the first bearing surface with the first end as an axis Between the second bearing surface, the pick-and-place nozzle is located at the second end, and the swing arm is pre- The amount of rotation is a preset amount of rotation, the swing arm is actuated between a first predetermined position of the first bearing surface and a second predetermined position of the second bearing surface; wherein the swing arm is according to the predetermined amount of rotation And rotating the correction amount to compensate the rotation offset of the die, and sucking the die from the target point of the die on the first bearing surface and moving to a placement point of the second bearing surface The die is placed on it. 如請求項1所述的晶粒檢測裝置,其中該擺臂在該第一預定位置根據該旋轉校正量作動,以在該第一承載面使該擺臂自該目標點將該晶粒取起,並在該第二承載面使該擺臂自該放置點放置該晶粒。 The die detecting device of claim 1, wherein the swing arm is actuated according to the rotation correction amount at the first predetermined position to cause the swing arm to pick up the die from the target point on the first bearing surface, And placing, on the second bearing surface, the swing arm from the placement point. 如請求項1所述的晶粒檢測裝置,其中該擺臂移動至該第一預定位置,以使該取放吸嘴可於該第一承載面吸起該晶粒,該擺臂旋轉至該第二預定位置並根據該旋轉校正量作動,以在該第二承載面自該放置點放置該晶粒。 The die detecting device of claim 1, wherein the swing arm is moved to the first predetermined position, so that the pick-and-place nozzle can suck the die on the first bearing surface, and the swing arm rotates to the The second predetermined position is actuated according to the rotation correction amount to place the die from the placement point on the second bearing surface. 如請求項1所述的晶粒檢測裝置,其中該旋轉校正量包含一第一旋轉校正分量及一第二旋轉校正分量,該擺臂在該第一預定位置根據該第一旋轉校正分量作動,以在該第一承載面自該目標點將該晶粒取起,該擺臂旋轉至該第二預定位置並根據該第二旋轉校正分量作動,以在該第二承載面自該放置點放置該晶粒。 The die detecting device of claim 1, wherein the rotation correction amount includes a first rotation correction component and a second rotation correction component, and the swing arm is actuated according to the first rotation correction component at the first predetermined position, Taking the die from the target point on the first bearing surface, the swing arm is rotated to the second predetermined position and actuated according to the second rotation correction component to place the second bearing surface from the placement point Grain. 如請求項1至4任一項所述的晶粒檢測裝置,更包含一水平位移機構,耦接該校正模組,該擺臂移動至該第一取置平台,該水平位移機構根據該目標點調整該晶粒與該擺臂的相對位置,使該擺臂在該第一承載面能自該目標點吸取該晶粒,該擺臂旋轉至該第二取置平台,該水平位移機構根據該放置點,使該擺臂在該第二承載面之該放置點上放置該晶粒。 The grain detecting device according to any one of claims 1 to 4, further comprising a horizontal displacement mechanism coupled to the correction module, wherein the swing arm moves to the first positioning platform, and the horizontal displacement mechanism is based on the target Adjusting a relative position of the die to the swing arm, so that the swing arm can suck the die from the target point on the first bearing surface, and the swing arm rotates to the second take-up platform, and the horizontal displacement mechanism is The placement point is such that the swing arm places the die on the placement point of the second bearing surface. 如請求項5所述的晶粒檢測裝置,該水平位移機構設置在該移載機構。 The grain detecting device according to claim 5, wherein the horizontal displacement mechanism is disposed in the transfer mechanism. 如請求項5所述的晶粒檢測裝置,該水平位移機構設置在該第一取置平台及/或該第二取置平台。 The grain detecting device according to claim 5, wherein the horizontal displacement mechanism is disposed on the first pick-up platform and/or the second pick-up platform. 如請求項1所述的晶粒檢測裝置,其中該放置點係預設定在該校正模組中。 The die detecting device of claim 1, wherein the placement point is preset in the correction module. 一種晶粒傳送方法,包含:擷取一晶粒之一影像;根據該影像計算該晶粒之一目標點與一旋轉偏移量; 根據該旋轉偏移量計算一旋轉校正量;及根據一預定旋轉量與該旋轉校正量驅動一擺臂,以補償該晶粒之該旋轉偏移量,並使該擺臂在一第一承載面自該晶粒的該目標點吸取該晶粒且移至該第二承載面之一放置點上放置該晶粒。 A method for transmitting a die includes: capturing an image of a die; and calculating a target point and a rotational offset of the die according to the image; Calculating a rotation correction amount according to the rotation offset; and driving a swing arm according to the predetermined rotation amount and the rotation correction amount to compensate the rotation offset of the die, and causing the swing arm to be in a first load The surface is sucked from the target point of the die and moved to a placement point of the second bearing surface to place the die. 如請求項9所述的晶粒傳送方法,其中該預定旋轉量係為該擺臂之預設的旋轉量,用以使該擺臂在該第一承載面的一第一預定位置及該第二承載面的一第二預定位置之間作動,於根據該預定旋轉量與該旋轉校正量驅動該擺臂的步驟中,該擺臂是在欲旋轉至該第一預定位置時根據該預定旋轉量與該旋轉校正量作動,或者在欲旋轉至該第二預定位置時根據該預定旋轉量與該旋轉校正量作動。 The die transfer method of claim 9, wherein the predetermined amount of rotation is a predetermined amount of rotation of the swing arm for causing the swing arm to be at a first predetermined position of the first bearing surface and the first Actuating between a second predetermined position of the two bearing surfaces, in the step of driving the swing arm according to the predetermined rotation amount and the rotation correction amount, the swing arm is according to the predetermined rotation when it is to be rotated to the first predetermined position The amount is actuated by the rotation correction amount or when the rotation is to be rotated to the second predetermined position, and the rotation correction amount is actuated according to the predetermined rotation amount. 如請求項10所述的晶粒傳送方法,其中該擺臂是在該第一預定位置根據該旋轉校正量作動的步驟中,更包含:根據該目標點調整該晶粒與該擺臂的相對位置。The method of claim 10, wherein the swing arm is in the first predetermined position according to the rotation correction amount, further comprising: adjusting the relative orientation of the die and the swing arm according to the target point position.
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