TWI525328B - C-v特性測定系統及c-v特性測定方法 - Google Patents
C-v特性測定系統及c-v特性測定方法 Download PDFInfo
- Publication number
- TWI525328B TWI525328B TW102108049A TW102108049A TWI525328B TW I525328 B TWI525328 B TW I525328B TW 102108049 A TW102108049 A TW 102108049A TW 102108049 A TW102108049 A TW 102108049A TW I525328 B TWI525328 B TW I525328B
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- crystal wafer
- characteristic
- measuring
- mercury
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06755—Material aspects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012097425A JP5618098B2 (ja) | 2012-04-23 | 2012-04-23 | C−v特性測定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201344205A TW201344205A (zh) | 2013-11-01 |
TWI525328B true TWI525328B (zh) | 2016-03-11 |
Family
ID=49482698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102108049A TWI525328B (zh) | 2012-04-23 | 2013-03-07 | C-v特性測定系統及c-v特性測定方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10073126B2 (ko) |
EP (1) | EP2843694B1 (ko) |
JP (1) | JP5618098B2 (ko) |
KR (1) | KR101931713B1 (ko) |
TW (1) | TWI525328B (ko) |
WO (1) | WO2013161356A1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6044521B2 (ja) * | 2013-11-19 | 2016-12-14 | 信越半導体株式会社 | 半導体ウェーハの特性測定装置 |
KR102180216B1 (ko) * | 2014-03-28 | 2020-11-19 | 한국전자통신연구원 | 유기전자소자의 보호층 결함 검출 방법 및 이를 이용한 유기전자소자의 제조방법 |
CN108051645B (zh) * | 2017-12-26 | 2023-10-27 | 宁夏钜晶源晶体科技有限公司 | 一种钽酸锂、铌酸锂晶片电阻率测试装置及测试方法 |
JP6451881B1 (ja) * | 2018-01-24 | 2019-01-16 | 株式会社Sumco | シリコン層の評価方法およびシリコンエピタキシャルウェーハの製造方法 |
US11009525B1 (en) | 2020-05-14 | 2021-05-18 | Globalfoundries U.S. Inc. | System and method for measuring electrical properties of materials |
CN112967955B (zh) * | 2021-02-04 | 2023-09-19 | 长江存储科技有限责任公司 | 检测半导体设备的静电释放针脚失效的方法及半导体设备 |
CN113363137A (zh) * | 2021-05-28 | 2021-09-07 | 上海华力微电子有限公司 | 一种SiGe结构载流子浓度的监控方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5036271A (en) | 1990-05-23 | 1991-07-30 | Solid State Measurements, Inc. | Apparatus for characterization of electrical properties of a semiconductor body |
US6620385B2 (en) * | 1996-08-20 | 2003-09-16 | Ebara Corporation | Method and apparatus for purifying a gas containing contaminants |
JPH10154733A (ja) * | 1996-11-25 | 1998-06-09 | Dainippon Screen Mfg Co Ltd | 半導体ウェハのbt処理装置 |
JP3223869B2 (ja) * | 1997-11-17 | 2001-10-29 | 日本電気株式会社 | 不純物濃度の定量方法 |
US6168961B1 (en) | 1998-05-21 | 2001-01-02 | Memc Electronic Materials, Inc. | Process for the preparation of epitaxial wafers for resistivity measurements |
JP3672226B2 (ja) * | 1999-11-11 | 2005-07-20 | 大日本スクリーン製造株式会社 | 膜内イオン量測定方法および装置 |
JP4973133B2 (ja) * | 2005-11-10 | 2012-07-11 | 株式会社Sumco | エピタキシャル層の前処理方法およびエピタキシャル層の評価方法並びにエピタキシャル層の評価装置 |
KR100707585B1 (ko) | 2005-12-29 | 2007-04-13 | 동부일렉트로닉스 주식회사 | Mos 트랜지스터 소자의 정전용량-전압 특성을 이용한캐리어 농도 분포 측정 자동화 시스템 및 방법 |
US7253649B1 (en) | 2006-01-31 | 2007-08-07 | Four Dimensions, Inc, | Automatic mercury probe for use with a semiconductor wafer |
JP2008235477A (ja) * | 2007-03-19 | 2008-10-02 | Oki Electric Ind Co Ltd | フォトダイオードおよびそれを用いたフォトic |
JP5516931B2 (ja) * | 2009-03-12 | 2014-06-11 | ルネサスエレクトロニクス株式会社 | レジストパターン形成方法 |
JP2011199003A (ja) * | 2010-03-19 | 2011-10-06 | Tokyo Electron Ltd | シリコン酸化膜の形成方法、及びプラズマ処理装置 |
JP2011253906A (ja) * | 2010-06-01 | 2011-12-15 | Shin Etsu Handotai Co Ltd | 貼り合わせウェーハの製造方法 |
-
2012
- 2012-04-23 JP JP2012097425A patent/JP5618098B2/ja active Active
-
2013
- 2013-02-19 WO PCT/JP2013/053915 patent/WO2013161356A1/ja active Application Filing
- 2013-02-19 EP EP13781025.5A patent/EP2843694B1/en active Active
- 2013-02-19 KR KR1020147018558A patent/KR101931713B1/ko active IP Right Grant
- 2013-02-19 US US14/380,076 patent/US10073126B2/en active Active
- 2013-03-07 TW TW102108049A patent/TWI525328B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP2843694B1 (en) | 2019-04-03 |
KR20140146577A (ko) | 2014-12-26 |
JP2013225606A (ja) | 2013-10-31 |
WO2013161356A1 (ja) | 2013-10-31 |
EP2843694A1 (en) | 2015-03-04 |
US20150025826A1 (en) | 2015-01-22 |
KR101931713B1 (ko) | 2018-12-24 |
JP5618098B2 (ja) | 2014-11-05 |
TW201344205A (zh) | 2013-11-01 |
EP2843694A4 (en) | 2015-11-25 |
US10073126B2 (en) | 2018-09-11 |
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