TWI524839B - 接地系統、功率半導體裝置及可變速度式驅動器 - Google Patents

接地系統、功率半導體裝置及可變速度式驅動器 Download PDF

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TWI524839B
TWI524839B TW098121351A TW98121351A TWI524839B TW I524839 B TWI524839 B TW I524839B TW 098121351 A TW098121351 A TW 098121351A TW 98121351 A TW98121351 A TW 98121351A TW I524839 B TWI524839 B TW I524839B
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substrate
conductive layer
semiconductor module
electrically connected
semiconductor
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TW201010595A (en
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康斯坦汀 柏里索夫
麥可Ｓ 陶德
曼歐 西瑞沙 亞迪葛
艾文 賈德瑞克
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強生控制科技公司
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Description

接地系統、功率半導體裝置及可變速度式驅動器 相關申請案之交叉參考
此申請案係對於2008年7月18日提申名稱為“接地系統及裝置”的美國臨時申請案No.61/081,933作優先權及權利主張，該案合併於本文中以供參考。
本發明係有關於一種接地系統與裝置。
發明背景
本申請案概括有關接地系統，本申請案更特別有關用於具有一非傳導排熱器的半導體功率組件之接地系統。
使用於加熱、通風、空調及冷凍(HVAC&R)應用之可變速度式驅動器(VSD)係可使用排熱器或冷卻區塊以供譬如絕緣閘極雙載子電晶體半導體開關等半導體元件之安裝及熱性管理。排熱器可由譬如銅等具有高熱傳導係數的金屬構成。然而，金屬排熱器可能由於與製造排熱器相關的材料及勞力成本而價格昂貴。可變速度式驅動器(VSD)亦可使用譬如塑料等非金屬材料構成之排熱器，其可降低材料成本。然而，由於塑料排熱器通常因為其大尺寸與低用量而不適合射出成型製造，若使用塑料排熱器可能仍需要昂貴的機械加工。一特定排熱器的尺寸通常係取決於將被安裝在排熱器上之半導體組件的數量。
可被安裝在排熱器上之一型半導體組件係為半導體模組。一半導體模組可包括一基底，基底上安裝有一或多個 半導體元件。半導體模組的基底及半導體模組的一上傳導層可由一配置於個別半導體元件及基底之間的基材所分離。半導體模組中所使用之半導體元件或晶片係可包括絕緣閘極雙載子電晶體(IGBT)、雙載子接面電晶體(BJT)、金屬氧化物半導體場效電晶體(MOSFET)、半導體控制式整流器(SCR)、及其他適當的三端子半導體元件。基材可造成半導體元件與基底之間、及上傳導層與基底之間具有寄生電容。
半導體模組配合使用塑料排熱器之方式係可能造成寄生電流及電荷累積於半導體模組的基底及半導體模組內的電流導體之間。此等寄生電流及電荷可能干擾對於半導體模組之控制信號，因此造成模組內的部分半導體元件當其通常被控制信號要求成為“關斷(OFF)”或非傳導狀態時卻進入“接通(ON)”或傳導狀態。塑料或非傳導排熱器係造成半導體模組的基底對於系統其餘部分呈電性隔離；因此，施加至模組的電壓變化率所引發之任何寄生電流會在模組內流通，因此會潛在地干擾低位階控制信號並造成模組故障。因此需要一能夠使安裝在一非傳導排熱器上的半導體模組安全且可靠地操作之方法及系統。
發明概要
所揭露的接地系統係消除可能累積於上傳導層及基底之間的電荷、暨可能累積於半導體模組的其他導體之間的電荷。接地系統係降低累積於半導體模組上之電荷，且降 低寄生電流及半導體元件的異常操作，其可能導致半導體模組的破壞及譬如可變速度式驅動器(VSD)等可能採用半導體模組之其他電子組件的損害。
一實施例係有關一用於一半導體模組之接地系統。該系統係包括一第一傳導層，其能夠被電性連接至半導體模組，一第二傳導層，一基材，其配置於第一傳導層與第二傳導層之間，基材被電性連接至第一傳導層及第二傳導層，及一基底，其連接至第二傳導層。基底電性連接至地面地極，且基底被電性連接至第二傳導層。第一傳導層藉由基材而與第二傳導層呈電性絕緣。第一傳導層、基材及第二傳導層係形成半導體模組與基底之間的一電容路徑以降低半導體模組中所產生的寄生電流。
另一實施例係有關一功率半導體裝置。該裝置包括一半導體模組及安裝在一基底上之相關聯的控制電路。一非傳導排熱器係熱性導通於基底且流體導通於一液體供源。該裝置進一步包括一接地總成，其包括一第一傳導層，一第二傳導層；一基材，其配置於第一傳導層與第二傳導層之間；及一基底，其附接至第二傳導層，基底經由一接地繫繩被連接至地面地極或可變速度式驅動器(VSD)系統中的其他適當電壓參考點。第一傳導層係電性接觸於半導體模組及基材，且藉由基材而與第二傳導層呈電性絕緣。第二傳導層係電性接觸於基材並配置在基材以及與一地面地極呈電性導通的基底之間。第一傳導層、基材及第二傳導層係形成半導體模組與基底之間以及導體與基底之間的一 寄生電容路徑以降低半導體模組內的流通電流。
另一實施例係有關一可變速度式驅動器。該驅動器包括一轉換器階台，其連接至一AC功率供源，一DC連結件，其連接至轉換器階台，及一換流器階台，其連接至DC連結件。換流器階台係組構為可將來自DC連結件的一DC電壓轉換成一具有可變電壓及可變頻率的輸出AC功率。換流器進一步包括一或多個半導體模組及相關聯的控制電路，各半導體模組被安裝在一基底上。一非傳導排熱器係配置為熱性導通於基底且流體導通於一液體供源。換流器亦包括一接地總成。接地總成係包括一第一傳導層，其能夠被電性連接至半導體模組，一第二傳導層，一基材，其配置於第一傳導層與第二傳導層之間，基材被電性連接至第一傳導層及第二傳導層，及一基底，其連接至第二傳導層。基底電性連接至地面地極，且基底被電性連接至第二傳導層。第一傳導層藉由基材而與第二傳導層呈電性絕緣。第一傳導層、基材及第二傳導層係形成半導體模組與基底之間的一電容路徑以降低半導體模組中產生的寄生電流。
此處所描述的實施例之特定優點係在於：將由於基底與半導體模組的傳導電性路徑之間的累積電荷所導致可能發生在可變速度式驅動器中之經過半導體模組的擊穿電流(shoot-through current)予以消除。
圖式簡單說明
第1圖顯示一商業環境中之一加熱、通風、空調與冷凍(HVAC&R)系統的一示範性實施例； 第2圖示意性顯示可使用於第1圖的示範性實施例中之一HVAC&R系統的一示範性實施例；第3圖顯示安裝在一HVAC&R系統上之一可變速度式驅動器(VSD)的一示範性實施例；第4圖顯示一具有一排熱器之可變速度式驅動器系統的部份分解圖之一示範性實施例；第5圖顯示根據本申請案的態樣之一排熱器的一示範性實施例之俯視立體圖；第6圖顯示根據本申請案的態樣之一排熱器的一示範性實施例之仰視立體圖；第7圖顯示包括有印刷電路板、半導體模組及排熱器之一可變速度式驅動器(VSD)的一部分之俯視立體圖；第8圖顯示一半導體模組的示意橫剖視圖。
較佳實施例之詳細說明
第1圖顯示用於一商業環境之一建築物12中的一加熱、通風、空調系統(HVAC系統)10之一示範性實施例。系統10可包括一被併入一蒸氣壓縮系統14中之壓縮機，其可供應一可用來冷卻建築物12的經冷作液體。系統10亦可包括一用來加熱建築物12之鍋爐16，及一使空氣流通經過建築物12之空氣配送系統。空氣配送系統可包括一空氣回行導管18，一空氣供應導管20及一空氣處置器22。空氣處置器22可包括一熱交換器，熱交換器被導管24連接至鍋爐16及蒸氣壓縮系統14。依據系統10的操作模式而定，空氣處 置器22中的熱交換器可接收來自鍋爐16之經加熱液體或來自蒸氣壓縮系統14之經冷作液體。圖中顯示系統10在建築物12的各樓層上具有一分離的空氣處置器，但請瞭解可在兩個或更多個樓層之間共用這些組件。
第2圖示意性顯示具有可使用於第1圖的建築物12中之可變速度式驅動器(VSD)26的系統14之一示範性實施例。系統10可包括壓縮機28，一凝結器30，一液體冷作器或蒸發器32以及一控制面板34。壓縮機28係藉由被可變速度式驅動器(VSD)26供應動力的馬達36所驅動。可變速度式驅動器(VSD)26可譬如為一向量型驅動器或一可變電壓、可變頻率式(VVVF)驅動器。可變速度式驅動器(VSD)26係從AC功率供源38接收具有特定固定線電壓及固定線頻率之AC功率並將AC功率以所想要電壓及所想要頻率提供至馬達36，其兩者皆可變以滿足特定要求。控制面板34可包括多種不同組件，諸如類比至數位(A/D)轉換器、微處理器、非依電性記憶體、及介面板，以控制系統10的操作。控制面板34亦可用來控制可變速度式驅動器(VSD)26、及馬達36之操作。
壓縮機28係壓縮一冷媒蒸氣並經由一排放線路將該蒸氣輸送至凝結器30。壓縮機28可為任何適當類型的壓縮機，譬如螺旋壓縮機、離心壓縮機、往復壓縮機、渦捲壓縮機等。壓縮機28輸送至凝結器30之冷媒蒸氣係進入與一諸如空氣或水等流體之熱交換關係中，並由於與流體的熱交換關係之緣故而經歷一相變成為一冷媒液體。來自凝結器30之經凝結的液體冷媒係流動經過一膨脹元件(未圖示) 來到蒸發器32。
蒸發器32可包括用於一冷卻負荷的一供應線路及一回行線路之連接件。一譬如水、乙烯、氯化鈣鹵水或氯化鈉鹵水等次級液體係經由回行線路移行至蒸發器32中並經由供應線路離開蒸發器32。蒸發器32中的液體冷媒係進入與次級液體之一熱交換關係中以降低次級液體的溫度。蒸發器32中的冷媒液體係由於與次級液體的熱交換關係之緣故而經歷一相變成為一冷媒蒸氣。蒸發器32中的蒸氣冷媒係離開蒸發器32並藉由一吸取線路回行至壓縮器28以完成循環。
第3圖顯示一HVAC&R系統的一示範性蒸氣壓縮系統。可變速度式驅動器(VSD)26安裝在蒸發器32頂上，並與馬達36、及控制面板34相鄰。馬達36可在蒸發器32的相對側被安裝於凝結器30上。來自可變速度式驅動器(VSD)26之輸出配線(未圖示)係連接至用於馬達36之馬達引線(未圖示)，以對馬達36供應功率，藉以驅動壓縮機28。
第4圖顯示具有複數個功率半導體模組或絕緣閘極雙載子電晶體(IGBT)模組40之一可變速度式驅動器26的一部份，複數個功率半導體模組或絕緣閘極雙載子電晶體(IGBT)模組40係配置為熱性接觸於一排熱器42。可變速度式驅動器(VSD)26可用來將所想要的功率提供至用於壓縮機或者HVAC系統或其他應用中的其他設備之馬達。一HVAC系統中，譬如，由可變速度式驅動器(VSD)26供應功率的一馬達係可驅動一蒸氣壓縮系統的一壓縮機。一實施例中，模組 40可含有3個雙重絕緣閘極雙載子電晶體(IGBT)模組，諸如由德國紐必堡的英分尼恩科技(Infineon Technologies)製造，以實行一可變速度式驅動器(VSD)的一三相轉換器或換流器，但可藉由排熱器42來冷卻需要冷卻以供最佳操作之其他半導體元件或其他電子組件。冷卻流體導管43、45係連接至入口通道47及出口通道49，以分別將冷卻流體導入至排熱器42中。導管43及45連接至冷卻流體的一連續供源以對於排熱器42供應冷卻流體。來自凝結器30之一諸如水等流體係經由導管43流入排熱器42中並經由導管45離開排熱器42。一端板39可在一系列互連排熱器42的端點處被固接至一排熱器42，以將來自導管43的流體流導引至導管45。
排熱器42係從對於馬達36供應功率之半導體模組40移除熱量。半導體模組40可以一密封關係被附接至排熱器42。施加至排熱器42之冷卻流體較佳係為在一閉迴路中流過排熱器42及一熱交換器之水。熱交換器(未圖示)係在流體被重新導入排熱器42之前予以降低溫度。熱交換器可為一殼與管型熱交換器，其中利用來自HVAC系統的一冷卻塔之水來冷卻被施加至排熱器42之水。
如第5及6圖所示之一實施例中，排熱器42包括一塑料本體44，其具有一形成於一頂表面48上之通路46。替代性實施例中，排熱器42可由諸如陶瓷或橡膠等其他非傳導材料構成。一電子組件、譬如一半導體開關或半導體模組可被安裝在頂表面48上。形成於頂表面48上之通路46係提供一空間以供一O環(未圖示)形成一密封件於一基底104(請見 第7圖)與組件之間。本體44具有一延伸經過本體44之入口通道47，及一延伸經過本體44之出口通道49。通道47及49具有預定的直徑60、或用於替代性輪廓之橫剖面積，其尺寸可當一起使用多重排熱器42時滿足流率及壓降要求。一液體、譬如來自凝結器30的水係流通經過通道47及49以對於該組件提供冷卻。
本體44具有一形成於頂表面48中之盆41以對於一組件(未圖示)提供冷卻。流經入口通道47之冷卻流體的一部分係轉向經過一盆入口51，橫越盆41，且排放通過一盆出口53。冷卻流體隨後流過出口通道49。流動橫越盆41之流體係直接地接觸於一半導體模組(未圖示)的基底。流體與基底交換熱量以冷卻半導體模組。多重的排熱器42可連接在一起以容納多重的電子組件40及其相關聯的基底104。
排熱器的進一步細節係揭露於共同擁有之2008年5月28日提申名稱為“冷卻構件”的美國專利申請案編號12/057,787中，該案整體合併於本文中以供參考。
第7圖顯示複數個互連的排熱器42，其對應的組件74被安裝在排熱器42上以供冷卻。當一可變速度式驅動器(VSD)(未圖示)具有不只一個組件74時，各組件74安裝至一對應的排熱器42。如圖所示，組件74係為一具有一電路板75之半導體模組40。譬如，若可變速度式驅動器(VSD)具有四個組件74，各組件74係安裝至一分離的排熱器42且各排熱器42固接至一相鄰的排熱器42。
接著參照第8圖，顯示一消除了可能累積於一基底104 與配置在半導體模組40內的一或多個銅導體106之間的電荷之實施例。快速地切換半導體模組40可達成模組輸出上之高品質輸出電壓及電流，然而，半導體模組40的快速切換過程可能引發流經半導體模組40內的耦合電容所生成路徑之寄生電流。所引發的寄生電流可流入半導體模組40的控制電路中，並造成半導體元件112意外切換至一接通(ON)狀態，其限制條件在於：半導體模組40的基底104、及地面地極108或部分其他適當電壓參考點之間沒有接地連接。意外切換成接通(ON)狀態將會造成半導體模組40的正與負端子之間的一短路連接，導致經過半導體模組40之高電流流，其可能損害半導體模組40及可變速度式驅動器(VSD)26的控制電路。一半導體模組40中的此短路狀況常稱為擊穿電流，半導體模組40中應該防止發生擊穿電流。
第8圖所示的組態係實質地防止了流通的寄生電流所產生的電荷累積於半導體模組40上。半導體模組40可包括一基材110，一半導體元件112，其安裝在基材110上，及導線結合部106，其提供半導體元件112與內部半導體元件導體(未圖示)之間的撓性電連接。一第一傳導層102的傳導材料係配置於半導體元件112與基材110之間，而一第二傳導層103的傳導材料配置於基材110與各半導體模組40的基底104之間。傳導層可譬如由銅、鋁、金、銀、及其合金、或一導電塑料材料構成。基底104經由一或多個接地導體114連接至地面地極108，或部分其他適當的電壓參考點，譬如，DC連結件的負軌道。一實施例中，第二傳導層103可 經由銲料118被連接至基底104。基材110由一非傳導或絕緣材料製成。一實施例中，基材可為一陶瓷材料，但可使用許多其他非傳導材料來形成基材110。藉由一基材110所分離之兩層102、103的傳導材料之組態係導入一電容藉以將半導體元件112內部導體及導線結合部106耦合至經接地的基底104。額外的傳導連接係防止電荷累積於基底104與半導體模組40的傳導部份之間、暨半導體模組的傳導部分之間，導致流動於模組內側之寄生或流通電流的顯著降低並因此防止半導體模組40中發生擊穿電流。
雖然僅已顯示及描述本發明的特定特徵構造及實施例，熟習該技藝者可瞭解許多修改及變化(譬如，不同元件的尺寸、維度、結構、形狀及比例、參數值(譬如溫度、壓力等)、安裝配置、材料使用、顏色、定向等之變異)而不實質地脫離申請專利範圍中所描述標的物之新穎教導與優點。因此，請瞭解申請專利範圍預定涵蓋了落在本發明真正精神內的所有修改及變化。尚且，為了提供示範性實施例的簡明描述，可能尚未描述一實際實行方式的所有特徵構造(亦即與目前想見的本發明最佳實施模式無關者、或與可藉以能夠實施所請求的本發明無關者)。應瞭解在任何此實際實行方式之發展中，如同任何工程或設計專案中，可作出眾多種與實行方式特定相關之決策。此發展心力有可能很複雜且耗時，但對於熟習可從此揭示獲益的技藝之人士而言仍是設計、製作及製造上的例行任務，而無需不當的實驗。
10‧‧‧加熱、通風、空調(HVAC)系統
12‧‧‧建築物
14‧‧‧蒸氣壓縮系統
16‧‧‧鍋爐
18‧‧‧空氣回行導管
20‧‧‧空氣供應導管
22‧‧‧空氣處置器
24‧‧‧導管
26‧‧‧可變速度式驅動器(VSD)
28‧‧‧壓縮機
30‧‧‧凝結器
32‧‧‧液體冷作器或蒸發器
34‧‧‧控制面板
36‧‧‧馬達
38‧‧‧AC功率供源
39‧‧‧端板
40‧‧‧模組
41‧‧‧盆
42‧‧‧排熱器
43、45‧‧‧冷卻流體導管
44‧‧‧塑料本體
46‧‧‧通路
47‧‧‧入口通道
48‧‧‧頂表面
49‧‧‧出口通道
51‧‧‧盆入口
53‧‧‧盆出口
60‧‧‧直徑
74‧‧‧組件
75‧‧‧電路板
102‧‧‧第一傳導層
103‧‧‧第二傳導層
104‧‧‧基底
106‧‧‧銅導體，導線結合部
108‧‧‧地面地極
110‧‧‧基材
112‧‧‧半導體元件
114‧‧‧接地導體
118‧‧‧銲料
第1圖顯示一商業環境中之一加熱、通風、空調與冷凍(HVAC&R)系統的一示範性實施例；第2圖示意性顯示可使用於第1圖的示範性實施例中之一HVAC&R系統的一示範性實施例；第3圖顯示安裝在一HVAC&R系統上之一可變速度式驅動器(VSD)的一示範性實施例；第4圖顯示一具有一排熱器之可變速度式驅動器系統的部份分解圖之一示範性實施例；第5圖顯示根據本申請案的態樣之一排熱器的一示範性實施例之俯視立體圖；第6圖顯示根據本申請案的態樣之一排熱器的一示範性實施例之仰視立體圖；第7圖顯示包括有印刷電路板、半導體模組及排熱器之一可變速度式驅動器(VSD)的一部分之俯視立體圖；第8圖顯示一半導體模組的示意橫剖視圖。
40‧‧‧模組
42‧‧‧排熱器
74‧‧‧組件
102‧‧‧第一傳導層
103‧‧‧第二傳導層
104‧‧‧基底
106‧‧‧銅導體，導線結合部
108‧‧‧地面地極
110‧‧‧基材
112‧‧‧半導體元件
114‧‧‧接地導體
118‧‧‧銲料

Claims (19)

  1. 一種用於半導體模組之接地系統，其包含：一第一傳導層，其係電性連接至該半導體模組；一第二傳導層；一基材，其具有一第一表面及與該第一表面相對立的一第二表面，該基材係配置於該第一傳導層與該第二傳導層之間，該基材係於該第一表面上電性連接至該第一傳導層，且於該第二表面上電性連接至該第二傳導層；及一基底，其係連接至該第二傳導層，該基底係可電性連接至地面地極；該第一傳導層係藉由該基材而與該第二傳導層分開；及其中該第一傳導層、該基材及該第二傳導層在該半導體模組與該基底之間形成一電容路徑，以降低該半導體模組中所產生的寄生電流。
  2. 如申請專利範圍第1項之系統，其中該半導體模組係選自下列各物組成的群組：絕緣閘極雙載子電晶體(IGBT)、雙載子接面電晶體(BJT)、金屬氧化物半導體場效電晶體(MOSFET)、半導體控制式整流器(SCR)、及其他三端子半導體元件。
  3. 如申請專利範圍第1項之系統，其中該第一傳導層及該第二傳導層係由選自下列各物組成的群組之一電傳導金屬所構成：銅、鋁、金、銀、鉑及其合金。
  4. 如申請專利範圍第1項之系統，其中該第二傳導層係藉由 於一介面邊緣的一部分周圍之一銲料連接而附裝至該基底。
  5. 如申請專利範圍第1項之系統，其中該基材包含一陶瓷材料。
  6. 如申請專利範圍第1項之系統，其中該基材包含一非傳導材料。
  7. 如申請專利範圍第1項之系統，其中該基底係藉由一導體而連接至地面地極，該導體係在一端結合至該基底且在一相對端結合至該地面地極或其他適當電壓參考點。
  8. 一種功率半導體裝置，其包含：安裝在一基底上之一半導體模組及相關的控制電路；一非傳導排熱器，其係與該基底熱連通且與一液體供源流體連通；及一接地總成，其包含：一第一傳導層；一第二傳導層；一基材，其具有一第一表面及與該第一表面相對立之一第二表面，該基材係配置於該第一傳導層與該第二傳導層之間，該基材係於該第一表面上電性連接至該第一傳導層，且於該第二表面上電性連接至該第二傳導層；及一基底，其係連接至該第二傳導層，該基底係可電性連接至地面地極；該第一傳導層係電性接觸於該半導體模組及該基材，且係藉由該基材而與該第二傳導層呈電性 絕緣；該第二傳導層係電性接觸於該基材並係配置在該基材及與一地面地極呈電性導通的該基底之間；其中該第一傳導層、該基材及該第二傳導層在該半導體模組與該基底之間形成一電容路徑，以降低流通電流。
  9. 如申請專利範圍第8項之裝置，其中該排熱器進一步包含：一本體，其具有一組配來接收該半導體模組之表面，一盆，其係配置於該基底的表面上；一通道，其係形成於該基底中且組配來接收經過之液體；及其中流動經過該通道之該液體的一部分係被轉向橫越與該基底呈熱連通之該盆，以從半導體開關將熱量轉移至液體冷卻劑。
  10. 如申請專利範圍第8項之裝置，其中該半導體模組係為一絕緣閘極雙載子電晶體。
  11. 如申請專利範圍第8項之裝置，其中該第一傳導層及該第二傳導層係由一電傳導金屬構成。
  12. 如申請專利範圍第11項之裝置，其中該金屬係選自下列各物所組成的群組：銅、鋁、金、銀、鉑及其合金。
  13. 如申請專利範圍第8項之裝置，其中該第二傳導層係藉 由一銲料連接而附裝至該基底。
  14. 如申請專利範圍第8項之裝置，其中該基材包含一陶瓷材料。
  15. 如申請專利範圍第8項之裝置，其中該基材包含一非傳導材料。
  16. 如申請專利範圍第8項之系統，其中該基底係藉由一導體連接至地面地極。
  17. 一種可變速度式驅動器，其包含：連接至一AC功率供源的一轉換器；連接至該轉換器的一DC連結件；及連接至該DC連結件的一換流器，該換流器係組構來將來自該DC連結件的一DC電壓轉換成一具有可變電壓與一可變頻率的輸出AC功率，該換流器進一步包含：安裝在一基底上的至少一半導體模組及相關聯的控制電路；一非傳導排熱器，其係與該基底熱連通且與一液體供源流體連通；及一接地總成，其包含：一第一傳導層，其係可電性連接至該半導體模組；一第二傳導層；一基材，其具有一第一表面及與該第一表面相對立之一第二表面，該基材係配置於該第一傳導層與該第二傳導層之間，該基材係於該第一表面上電 性連接至該第一傳導層，且係於該第二表面上電性連接至該第二傳導層；及一基底，其係連接至該第二傳導層，該基底係可電性連接至地面地極，且該基底係電性連接至該第二傳導層；該第一傳導層係藉由該基材而與該第二傳導層電性絕緣；及其中該第一傳導層、該基材及該第二傳導層在該半導體模組與該基底之間形成一電容路徑，以降低該半導體模組中的流通電流。
  18. 如申請專利範圍第17項之可變速度式驅動器，其中該半導體模組係為一絕緣閘極雙載子電晶體。
  19. 如申請專利範圍第17項之可變速度式驅動器，其中該第二傳導層係藉由一銲料連接而附裝至該基底。
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