CN102077345A - 接地系统和设备 - Google Patents

接地系统和设备 Download PDF

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Publication number
CN102077345A
CN102077345A CN2009801250726A CN200980125072A CN102077345A CN 102077345 A CN102077345 A CN 102077345A CN 2009801250726 A CN2009801250726 A CN 2009801250726A CN 200980125072 A CN200980125072 A CN 200980125072A CN 102077345 A CN102077345 A CN 102077345A
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conductive layer
pedestal
semiconductor module
substrate
fin
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K·波利索夫
M·S·托德
S·阿蒂加曼诺
I·杰德瑞克
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Johnson Controls Technology Co
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Johnson Controls Technology Co
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Abstract

一种用于变速驱动器的半导体模块的接地系统包括：第一导电层；第二导电层；衬底，其布置在第一导电层和第二导电层之间；以及基座，其附接至第二导电层，该基座经由接地线连接至地。第一导电层与半导体模块和衬底电接触，并通过衬底与第二导电层电绝缘。第二导电层与衬底电接触，并布置在衬底和与地电连通的基座之间。第一导电层、衬底和第二导电层形成了半导体模块和基座之间以及导体和基座之间的电容通路，以降低半导体模块内的循环电流。

Description

接地系统和设备
相关申请的互相参引
本申请要求2008年7月18日递交的题为“Grounding system and apparatus”的第61/081933号美国临时申请的优先权和利益，所述临时申请特此以引证方式纳入。
技术领域
本申请总体涉及接地系统。本申请更具体而言涉及用于具有不导电散热片(heat sink)的半导体功率元件(semiconductor power components)的接地系统。
背景技术
用于供热、通风、空气调节和制冷(HVAC&R)应用的变速驱动器(VSD)可以使用散热片或冷却块，以用于安装半导体器件——例如绝缘栅双极晶体管半导体开关——以及对其进行热量管理。所述散热片可以由具有高的热传导系数的金属例如铜构成。但是，由于与散热片制造相关的材料和人力成本，金属散热片是昂贵的。VSD也可以使用由非金属材料例如塑料构成的散热片，这降低了材料的成本。但是，使用塑料散热片可能仍旧需要昂贵的加工过程，因为，由于塑料散热片的大尺寸和低使用量，它们通常并不适合注塑制造。特定散热片的尺寸通常由要安装在该散热片上的半导体元件的数量而定。
一类可以安装在散热片上的半导体元件是半导体模块。半导体模块可以包括基座，一个或多个半导体器件安装在该基座上。半导体模块的基座和半导体模块的上导电层可以由布置在个体半导体器件和所述基座之间的衬底层分隔。在半导体模块中使用的半导体器件或芯片可以包括绝缘栅双极晶体管(IGBT)、双极结型晶体管(BJT)、金属氧化物半导体场效应晶体管(MOSFET)、半导体控制整流器(SCR)，以及其他适合的三端子半导体器件。所述衬底可能导致在半导体器件和基座之间以及在上导电层和基座之间出现寄生电容。
将塑料散热片与半导体模块一起使用可能导致寄生电流和电荷聚集在半导体模块的基座和半导体模块内的电流导体之间。所述寄生电流和电荷可能干扰用于半导体模块的控制信号，从而导致该模块内的一些半导体器件在本应被该控制信号要求处于“OFF”或不导电状态时进入“ON”或导电状态。塑料或不导电散热片使得半导体模块的基座与该系统的其他部分电绝缘；因此，由施于该模块的电压的变化率引起的任何寄生电流可能在该模块中循环，由此潜在地会干扰低电平控制信号，并导致该模块发生故障。因此需要一种使得安装在不导电散热片上的半导体模块能够安全和可靠地运行的方法和系统。
发明内容
所公开的接地系统消除了可能聚集在上导电层和基座之间的电荷，以及可能聚集在半导体模块内的其他导体之间的电荷。所述接地系统降低了聚集在半导体模块上的电荷、降低了寄生电流以及半导体器件的不正常运行，这些本可能导致半导体模块的破坏，以及导致对包含有所述半导体模块的其他电子元件例如VSD的损坏。
一个实施方案涉及一种用于半导体模块的接地系统。所述系统包括：第一导电层，其能够电连接至半导体模块；第二导电层；衬底，其布置在第一导电层和第二导电层之间，并电连接至第一导电层和第二导电层；以及基座，其连接至第二导电层。所述基座电连接至地，且所述基座电连接至第二导电层。第一导电层通过所述衬底与第二导电层电绝缘。所述第一导电层、衬底和第二导电层形成了半导体模块和基座之间的电容通路(capacitance path)，从而降低了半导体模块中产生的寄生电流。
另一实施方案涉及一种功率半导体设备。所述设备包括安装在基座上的半导体模块和关联控制电路。不导电的散热片与基座热连通，且与液体源流体连通。所述设备还包括接地组件，该接地组件包括第一导电层；第二导电层；衬底，其布置在第一导电层和第二导电层之间；以及基座，其附接至第二导电层，并通过接地线(grounding harness)连接至地或该VSD系统中的其他适合的电压参考点。所述第一导电层与半导体模块和衬底电接触，并通过衬底与第二导电层电绝缘。第二导电层与衬底电接触，并布置在衬底和基座之间，所述基座与地电连通。第一导电层、衬底和第二导电层形成了半导体模块和基座之间，以及导体和基座之间的寄生电容通路，以降低半导体模块内的循环电流。
另一实施方案涉及一种变速驱动器。该驱动器包括连接至交流电源(AC power source)的变换器级(converter stage)、连接至变换器级的直流链路(DC link)以及连接至直流链路的逆变器级(inverter stage)。所述逆变器级配置为将来自直流链路的直流电压转换为具有可变电压和可变频率的输出交流电(output AC power)。所述逆变器还包括一个或多个半导体模块以及关联控制电路，每个半导体模块都被安装在基座上。不导电的散热片被布置为与所述基座热连通，且与液体源流体连通。所述逆变器还包括接地组件。该接地组件包括：第一导电层，其能够电连接至半导体模块；第二导电层；衬底，其布置在第一导电层和第二导电层之间，并电连接至第一导电层和第二导电层；以及基座，其连接至第二导电层。所述基座电连接至地，且所述基座电连接至第二导电层。第一导电层通过所述衬底与第二导电层电绝缘。第一导电层、衬底和第二导电层形成了半导体模块和基座之间的电容通路，从而降低了半导体模块中产生的寄生电流。
这里所描述的实施方案的一些优点是消除了穿过半导体模块的直通(shoot-through)电流，该直通电流可能因在所述半导体模块的基座和导电的电通路之间聚积的电荷而出现在变速驱动器中。
附图说明
图1示出了在商业环境中的供热、通风、空气调节和制冷(HVAC&R)系统的示例性实施方案。
图2示意性地图示了可以用在图1的示例性实施方案中的HVAC&R系统的示例性实施方案。
图3示出了安装在HVAC&R系统上的变速驱动器(VSD)的示例性实施方案。
图4以局部分解图示出了带有散热片的变速驱动系统的示例性实施方案。
图5示出了根据本申请的多个方面的散热片的示例性实施方案的顶部立体图。
图6示出了根据本申请的多个方面的散热片的示例性实施方案的底部立体图。
图7示出了包括印刷电路板、半导体模块和散热片的VSD的一部分的顶部立体图。
图8示出了半导体模块的示意性截面图。
具体实施方式
图1示出了在商用场景的建筑12中的供热、通风、空气调节和制冷系统(HVAC&R系统)10的示例性环境。系统10可以包括包含在气体压缩系统(vapor compression system)14中的压缩机，所述气体压缩系统可以提供可以用于为建筑12制冷的冷却液体(chilled liquid)。系统10也可以包括用于为建筑12供热的锅炉(boiler)16，以及使空气在建筑12中循环的空气分配系统。所述空气分配系统可以包括空气返回管18、空气供应管20，以及空气处理器22。空气处理器22可以包括热交换器，该热交换器通过导管(conduits)24连接至锅炉16和气体压缩系统14。根据系统10的运行模式，空气处理器22中的热交换器可以从锅炉16接收加热液体(heated liquid)或者从气体压缩系统14接收冷却液体。系统10被示出为在建筑12的各个楼层上具有分立的空气处理器，但应认识到，这些部件可以在两个或多个楼层之间共享。
图2示意性地示出了可以用在图1中的建筑12中的、带有VSD 26的系统14的示例性实施方案。系统10可以包括压缩机28、冷凝器30、液体冷却器或蒸发器32，以及控制面板34。压缩机28由电机36驱动，电机36由VSD 26供电。VSD 26可以是，例如，向量型驱动器或可变电压可变频率(VVVF)驱动器。VSD 26从交流电源38接收具有特定固定线电压和固定线频率的交流电，并向电机36提供期望电压和期望频率的交流电，所述期望电压和期望频率均可被改变以满足特定的需求。控制面板34可以包括各种不同的部件——诸如模数(A/D)转换器、微处理器、非易失性存储器以及接口板——以控制系统10的运行。控制面板34也可以用于控制VSD 26和电机36的运行。
压缩机28压缩制冷剂气体并将该气体通过排放管线传输至冷凝器30。压缩机28可以是任何适合类型的压缩机，诸如螺旋式压缩机、离心式压缩机、往复式压缩机、涡旋式压缩机等。由压缩机28传输至冷凝器30的制冷剂气体与流体(例如，空气或水)进行热交换，并且因与所述流体进行热交换而相变为制冷剂液体(refrigerant liquid)。来自冷凝器30的冷凝的液态制冷剂流过一个膨胀装置(未示出)到达蒸发器32。
蒸发器32可以包括到冷却负载的供应管线和返回管线的连接。辅助液体(secondary liquid)(例如，水、乙烯、氯化钙盐水(brine)或氯化钠盐水)经由返回管线流入蒸发器32，并经由供应管线流出蒸发器32。蒸发器32中的液态制冷剂与辅助液体进行热交换，以降低辅助液体的温度。蒸发器32中的制冷剂液体因与辅助液体的热交换而相变为制冷剂气体(refrigerant vapor)。蒸发器32中的气态制冷剂流出蒸发器32，并通过抽吸管线返回压缩机28，以完成循环。
图3示出了HVAC&R系统的示例性气体压缩系统。VSD 26安装在蒸发器32的顶部，并与电机36和控制面板34相邻。电机36可以在蒸发器32的相反侧被安装在冷凝器30上。VSD 26的输出线(未示出)被连接至电机36的电机引线(leads)(未示出)，以向电机36供电，该电机36驱动压缩机28。
图4示出了变速驱动器26的一部分，该部分带有多个功率半导体模块或IGBT模块40，这些模块40布置为与散热片42热接触。VSD 26可以用来向用于HVAC系统或其他应用中的压缩机或其他设备的电机提供期望的电能。在HVAC系统中，例如，由VSD 26供电的电机可以驱动气体压缩系统的压缩机。在一个实施方案中，模块40可以包括3个双重(dual)IGBT模块(诸如由德国的Infineon Technologies of Neubiberg制造的模块)以实现VSD的三相变换器或逆变器，不过需要冷却以实现最优运行的其他半导体器件或其他电子元件也可以通过散热片42来冷却。冷却流体导管43、45分别连接至用于将冷却流体引入散热片42的入口通道47和出口通道49。导管43和45连接至冷却流体的连续源，以向散热片42提供冷却流体。来自冷凝器30的流体，诸如水，穿过导管43流入散热片42，并穿过导管45流出散热片42。端板(endplate)39可以在一系列互连散热片42的端部被固定至散热片42，以引导流体从导管43流向导管45。
散热片42将热量从为电机36供电的半导体模块40除去。半导体模块40可以以密封式关系附接至散热片42。施于散热片42的冷却流体优选为水，该水在闭合回路中流过散热片42和热交换器。所述热交换器(未示出)在该流体再次流入散热片42之前降低该流体的温度。所述热交换器可以是管壳式(shell and tube type)热交换器，其中来自HVAC系统的冷却塔的水用于冷却施于散热片42的水。
在图5和图6示出的一个实施方案中，散热片42包括塑料主体44，该塑料主体44具有在顶表面48上形成的沟槽46。在替代性实施方案中，散热片42可以包括其他不导电材料——诸如陶瓷或橡胶。电子元件(诸如，半导体开关或半导体模块)可以被安装在顶表面48上。形成在顶表面48上的沟槽46为O形环(未示出)提供了空间，以在基座104(见图7)和所述元件之间形成密封。主体44具有延伸穿过主体44的入口通道47，以及延伸穿过主体44的出口通道49。通道47和49具有预定的直径60(或对于其他轮廓具有预定的横截面积)，其尺寸适于在同时使用多个散热片42时满足流量和压力降的需求。流体，例如来自冷凝器30的水，循环穿过通道47和49，以向所述元件提供冷却作用。
主体44具有在顶表面48中形成的盆部(tub)41，以用于向元件(未示出)提供冷却作用。流过入口通道47的冷却流体的一部分改道通过盆部入口51，穿越盆部41，并通过盆部出口53排放。所述冷却流体接着流过出口通道49。流过盆部41的流体与半导体模块(未示出)的基座直接接触。所述流体与所述基座进行热交换以冷却半导体模块。多个散热片42可以被连接在一起，以容纳多个电子元件40以及它们的关联基座104。
2008年3月28日递交的题为“Cooling Member”的第12/057,787号的共有美国专利申请中公开了散热片的其他细节，所述申请特此以引证方式整体纳入。
图7示出了多个互连的散热片42，其中相应元件74安装在散热片42上以进行冷却。当VSD(未示出)具有不止一个元件74时，每个元件74被安装至相应的散热片42。如图所示，元件74是带有电路板75的半导体模块40。例如，如果VSD具有四个元件74，那么每个元件74都被安装至分立的散热片42，并且每个散热片42被固定至相邻的散热片42。
接着参考图8，所示的实施方案消除了可能聚集在基座104和布置在半导体模块40内的一个或多个铜导体106之间的电荷。快速开关的半导体模块40可以在该模块的输出上获得高质量的输出电压和电流，但是，半导体模块40的快速开关过程可能引起流过通路的寄生电流，该通路由半导体模块40内的耦合电容(couping capacitance)产生。如果半导体模块40的基座104和地108或某其他合适的电压参考点之间没有接地连接，所引起的寄生电流就可以流入半导体模块40的控制电路，并导致半导体器件112意外地切换至0N状态。意外切换至ON状态可以导致半导体模块40的正端子和负端子之间的短路连接，引起流过半导体模块40的高电流，该高电流可以损坏半导体模块40和VSD 26的控制电路。半导体模块40中的所述短路情况通常被称为直通电流，并应防止其在半导体模块40中发生。
图8中示出的配置基本防止了由循环寄生电流产生的电荷聚集在半导体模块40上。半导体模块40可以包括衬底层110、安装在衬底层110上的半导体器件112，以及接合线(wire bond)106，该接合线106在半导体器件112和内部半导体器件导体(未示出)之间提供了柔性电连接。导电材料的第一层102被布置在半导体器件112和衬底层110之间，以及导电材料的第二层103被布置在衬底层110和每个半导体模块40的基座104之间。所述导电层可以包括例如铜、铝、金、银，及其合金，或包括导电性塑料材料。基座104经由一个或多个接地导体114连接至地108或某其他适合的电压参考点，例如，直流链路的负轨道(negative rail)。在一个实施方案中，第二导电材料层103可以经由焊料118连接至基座104。衬底层110由不导电或绝缘的材料制成。在一个实施方案中，所述衬底层可以是陶瓷材料，不过许多其他不导电材料也可以用于形成衬底层110。由衬底层110分隔两个导体材料层102、103的配置产生了电容，该电容将半导体器件112的内部导体和接合线106连接至接地的基座104。附加的导电连接防止了电荷聚集在基座104和半导体模块40的导电部分之间，以及防止了电荷聚集在半导体模块的多个导电部分之间，从而显著地降低了在该模块内部流动的寄生或循环电流，并因此防止了半导体模块中出现直通电流。
虽然仅图示和描述了本发明的一些特征和实施方案，但在实质上没有背离权利要求中所述的主题的新颖性教导和优点的情况下，本领域普通技术人员可以进行许多修改和改变(例如，各个元件的尺寸、维度、结构、形状和比例的改变；参数值(例如，温度、压力等)的改变；安装布置的改变；材料、颜色、方向的改变等)。因此，应理解的是，所附权利要求旨在覆盖落在本发明的实质宗旨范围内的所有这些修改和改变。此外，为了提供对示例性实施方案的简明描述，可能并未描述实际应用中的所有特征(即，与目前构思的实现本发明的最佳形式无关的特征或与实现所要求保护的方案无关的特征并未得到描述)。应认识到的是，在任何这些实际应用的开发中，以及在任何工程或设计项目中，可以进行多种为应用特设的抉择。所述的开发努力可能是复杂和耗时的，不过对于受益于本公开内容的本领域普通技术人员来说，仍然是常规进行的设计、制造和生产，而不必进行过多的实验。

Claims (19)

1.一种用于半导体模块的接地系统，包括：
第一导电层，其能够电连接至所述半导体模块；
第二导电层；
衬底，其布置在所述第一导电层和所述第二导电层之间，所述衬底电连接至所述第一导电层和所述第二导电层；以及
基座，其连接至所述第二导电层，所述基座电连接至地，且所述基座电连接至所述第二导电层；
所述第一导电层通过所述衬底与所述第二导电层电绝缘；并且
其中，所述第一导电层、所述衬底和所述第二导电层形成了所述半导体模块和所述基座之间的电容通路，以降低所述半导体模块中产生的寄生电流。
2.根据权利要求1所述的系统，其中所述半导体模块选自：n绝缘栅双极晶体管(IGBT)、双极结型晶体管(BJT)、金属氧化物半导体场效应晶体管(MOSFET)、半导体控制整流器(SCR)，以及其他三端子半导体器件。
3.根据权利要求1所述的系统，其中所述第一导电层和所述第二导电层包括导电金属，所述导电金属选自：铜、铝、金、银、铂，及其合金。
4.根据权利要求1所述的系统，其中所述第二导电层通过接口边缘一部分周围的焊料连接固定至所述基座。
5.根据权利要求1所述的系统，其中所述衬底层包括陶瓷材料。
6.根据权利要求1所述的系统，其中所述衬底层包括不导电材料。
7.根据权利要求1所述的系统，其中所述基座通过导体连接至地，所述导体在一端接合到所述基座，以及在相对端接合至地或VSD系统中的其他适合电压参考点。
8.一种功率半导体设备，包括：
安装在基座上的半导体模块和关联控制电路；
不导电的散热片，其与所述基座热连通，且与液体源流体连通；以及
接地组件，包括：
第一导电层；第二导电层；衬底，其布置在所述第一导电层和所述第二导电层之间；以及基座，其附接至所述第二导电层，所述基座连接至地；
所述第一导电层与所述半导体模块和所述衬底电接触，并通过所述衬底与所述第二导电层电绝缘；
所述第二导电层与所述衬底电接触，并布置在所述衬底和与地电连通的所述基座之间；
其中，所述第一导电层、所述衬底和所述第二导电层形成了所述半导体模块和所述基座之间的电容通路，以降低循环电流。
9.根据权利要求8所述的设备，其中所述散热片还包括：
主体，其具有配置为接收所述半导体模块的表面；
盆部，其布置在所述基座的表面上；
通道，其形成在所述基座中，并配置为接纳穿过它的液体；以及
其中，流过所述通道的液体的一部分改道穿越所述盆部，与所述基座热连通，以将热量从所述半导体开关传递至液体冷却剂。
10.根据权利要求8所述的设备，其中所述半导体模块是绝缘栅双极晶体管。
11.根据权利要求8所述的设备，其中所述第一导电层和所述第二导电层包括导电金属。
12.根据权利要求11所述的设备，其中所述金属选自：铜、铝、金、银、铂，及其合金。
13.根据权利要求8所述的设备，其中所述第二导电层通过焊料连接固定至所述基座。
14.根据权利要求8所述的设备，其中所述衬底包括陶瓷材料。
15.根据权利要求8所述的设备，其中所述衬底包括不导电材料。
16.根据权利要求8所述的设备，其中所述基座通过导体连接至地。
17.一种变速驱动器，包括：
连接至交流电源的变换器，连接至所述变换器的直流链路，以及连接至所述直流链路的逆变器，所述逆变器配置为将来自所述直流链路的直流电压转换为具有可变电压和可变频率的输出交流电，所述逆变器还包括：
安装在基座上的至少一个半导体模块以及关联控制电路；
不导电的散热片，其与所述基座热连通，且与液体源流体连通；以及
接地组件，其包括：
第一导电层，其能够电连接至所述半导体模块；
第二导电层；
衬底，其布置在所述第一导电层和所述第二导电层之间，所述衬底电连接至所述第一导电层和所述第二导电层；以及
基座，其连接至所述第二导电层，所述基座电连接至地，且所述基座电连接至所述第二导电层；
所述第一导电层通过所述衬底与所述第二导电层电绝缘；并且
其中，所述第一导电层、所述衬底和所述第二导电层形成了所述半导体模块和所述基座之间的电容通路，以降低所述半导体模块中的寄生电流。
18.根据权利要求17所述的系统，其中所述半导体模块是绝缘栅双极晶体管。
19.根据权利要求17所述的系统，其中所述第二导电层通过焊料连接固定至所述基座。
CN2009801250726A 2008-07-18 2009-07-08 接地系统和设备 Pending CN102077345A (zh)

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Publication number Priority date Publication date Assignee Title
US9241430B2 (en) 2013-03-15 2016-01-19 Eaton Corporation Power pole isolated heat pipe inverter assembly
EP2992577B1 (en) * 2013-05-02 2019-01-09 Koninklijke Philips N.V. Cooling device for cooling a laser arrangement and laser system comprising cooling devices
PE20161187A1 (es) * 2014-03-27 2016-11-03 Eaton Corp Ensamblaje inversor de tubo termico aislado para polo de potencia

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04119659A (ja) * 1990-09-10 1992-04-21 Sumitomo Electric Ind Ltd リードフレーム
JPH04276646A (ja) * 1991-03-05 1992-10-01 Nissan Motor Co Ltd 半導体装置
DE19510774C2 (de) * 1995-03-24 1997-09-11 Hanning Elektro Werke Kühleinrichtung für elektronische Bauteile
US5778708A (en) 1995-05-05 1998-07-14 Liberty Safe & Security Products, Inc. Door locking mechanism for safes
DE19640488C2 (de) * 1996-09-30 2001-12-13 Fraunhofer Ges Forschung Verfahren zur Herstellung eines keramischen Kühlelements
JPH10200051A (ja) * 1997-01-14 1998-07-31 Canon Inc 半導体集積回路
JP2000031325A (ja) * 1998-07-13 2000-01-28 Hitachi Ltd 半導体パワーモジュール及びこれを用いたインバータ装置
US20020162673A1 (en) * 2001-05-03 2002-11-07 Cook Derrick E. Use of doped synthetic polymer materials for packaging of power electric assemblies for a liquid cooled module
US7619906B2 (en) 2005-03-01 2009-11-17 York International Corporation System for precharging a DC link in a variable speed drive
JP2006245479A (ja) * 2005-03-07 2006-09-14 Nichicon Corp 電子部品冷却装置
JP2006294971A (ja) * 2005-04-13 2006-10-26 Toyota Industries Corp パワーモジュール用基板及びその製造方法
JP2007141932A (ja) * 2005-11-15 2007-06-07 Toyota Industries Corp パワーモジュール用ベース
JP4872345B2 (ja) * 2005-12-28 2012-02-08 富士電機株式会社 電力変換装置のインバータモジュール
JP2008042124A (ja) * 2006-08-10 2008-02-21 Fuji Electric Holdings Co Ltd 半導体パワーモジュール
US7993959B2 (en) * 2006-09-14 2011-08-09 The Johns Hopkins University Methods for producing multiple distinct transistors from a single semiconductor
JP5442358B2 (ja) * 2009-08-25 2014-03-12 ルネサスエレクトロニクス株式会社 半導体装置

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