TWI513068B - Led structure, metallic frame of led structure, and carrier module - Google Patents

Led structure, metallic frame of led structure, and carrier module Download PDF

Info

Publication number
TWI513068B
TWI513068B TW102144367A TW102144367A TWI513068B TW I513068 B TWI513068 B TW I513068B TW 102144367 A TW102144367 A TW 102144367A TW 102144367 A TW102144367 A TW 102144367A TW I513068 B TWI513068 B TW I513068B
Authority
TW
Taiwan
Prior art keywords
conductive
frames
light
front surface
conductive frames
Prior art date
Application number
TW102144367A
Other languages
Chinese (zh)
Other versions
TW201503429A (en
Original Assignee
Lite On Opto Technology Changzhou Co Ltd
Lite On Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lite On Opto Technology Changzhou Co Ltd, Lite On Technology Corp filed Critical Lite On Opto Technology Changzhou Co Ltd
Priority to CN201410332560.7A priority Critical patent/CN104282823A/en
Publication of TW201503429A publication Critical patent/TW201503429A/en
Application granted granted Critical
Publication of TWI513068B publication Critical patent/TWI513068B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Description

發光二極體結構、發光二極體結構的金屬支架、及承載座模組Light-emitting diode structure, metal bracket of light-emitting diode structure, and bearing block module

本發明是有關一種發光結構,且特別是有關於一種發光二極體結構、發光二極體結構的金屬支架、及用以供數個發光二極體晶片安裝的承載座模組。The present invention relates to a light-emitting structure, and more particularly to a light-emitting diode structure, a metal bracket of a light-emitting diode structure, and a carrier module for mounting a plurality of light-emitting diode chips.

傳統的發光二極體結構隨著高瓦數輸出,其所使用的熱塑性(Thermoplastic)塑料已逐漸被熱固性(Thermoset)塑料所取代。然而,由於習用發光二極體結構的金屬支架與塑料之間的接觸面積比例較小,進而產生許多問題,例如:導電架與塑料之間的結合性問題以及水氣入侵問題。The traditional LED structure with high wattage output has been replaced by Thermoplastic plastics. However, since the ratio of the contact area between the metal bracket and the plastic which has a conventional light-emitting diode structure is small, many problems arise, such as a problem of bonding between the conductive frame and the plastic, and a problem of moisture intrusion.

於是,本發明人有感上述缺失之可改善,乃特潛心研究並配合學理之運用,終於提出一種設計合理且有效改善上述缺失之本發明。Therefore, the present inventors have felt that the above-mentioned deficiencies can be improved, and they have devoted themselves to research and cooperated with the application of the theory, and finally proposed a present invention which is reasonable in design and effective in improving the above-mentioned defects.

本發明實施例在於提供一種發光二極體結構、發光二極體結構的金屬支架、及承載座模組,其皆能透過設置位於密封區的分隔槽(如連通相鄰環側面且位於導電架四邊角落的分隔槽,或者環繞承載區外圍的環狀分隔槽)而使金屬支架與絕緣體之間結合性增加並能有效地減緩水氣入侵。Embodiments of the present invention provide a light-emitting diode structure, a metal bracket of a light-emitting diode structure, and a carrier module, which are all transparent to a partition groove disposed in a sealing area (eg, connected to an adjacent ring side and located in a conductive frame) The separation groove in the four corners, or the annular separation groove around the periphery of the load-bearing area, increases the bond between the metal bracket and the insulator and can effectively reduce moisture intrusion.

本發明實施例提供一種發光二極體結構,包括:一金屬支架,其具有兩間隔設置的導電架與數個分別自該兩導電架一體延伸形 成的延伸臂,每一導電架具有一正面、一背面、及相連於該正面與該背面周緣的一環側面,且每一導電架的正面定義有一密封區與一大致被該密封區所包圍的承載區;其中,每一導電架自其正面的密封區凹設形成有至少一分隔槽,且該至少一分隔槽連通於該環側面並於該環側面上形成兩開口,以使每一導電架的分隔槽能區隔開該些延伸臂的至少其中之一與該承載區;一發光二極體晶片,裝設於該金屬支架的承載區上並電性連接於該兩導電架;以及一絕緣體,其包覆於該金屬支架,且該兩導電架的背面部分區域以及該些延伸臂的末端面顯露於該絕緣體之外。An embodiment of the present invention provides a light emitting diode structure, including: a metal bracket having two spaced apart conductive frames and a plurality of extending from the two conductive frames An extension arm, each of the conductive holders has a front surface, a back surface, and a ring side surface connected to the front surface and the rear surface of the back surface, and a front surface of each of the conductive frames defines a sealing area and a substantially surrounded by the sealing area a carrying area; wherein each of the conductive frames is recessed from the sealing portion of the front surface thereof to form at least one dividing groove, and the at least one dividing groove communicates with the side surface of the ring and forms two openings on the side of the ring to make each conductive The partitioning slot of the rack can be spaced apart from at least one of the extending arms and the carrying area; a light emitting diode chip is mounted on the carrying area of the metal bracket and electrically connected to the two conductive racks; An insulator covering the metal bracket, and the back portion of the two conductive frames and the end faces of the extension arms are exposed outside the insulator.

本發明實施例另提供一種發光二極體結構的金屬支架,包括:兩導電架,其呈間隔設置,每一導電架具有一正面、一背面、及相連於該正面與該背面周緣的一環側面,且每一導電架的正面定義有一密封區與一大致被該密封區所包圍的承載區;以及數個延伸臂,其分別自該兩導電架一體延伸形成;其中,每一導電架自其正面的密封區凹設形成有至少一分隔槽,且該至少一分隔槽連通於該環側面並於該環側面上形成兩開口,以使每一導電架的分隔槽能區隔開該些延伸臂的至少其中之一與該承載區。The embodiment of the invention further provides a metal bracket with a light-emitting diode structure, comprising: two conductive frames disposed at intervals, each conductive frame having a front surface, a back surface, and a ring side connected to the front surface and the rear surface of the back surface And a front surface of each of the conductive frames defines a sealing area and a bearing area substantially surrounded by the sealing area; and a plurality of extending arms respectively extending from the two conductive frames; wherein each conductive frame is The front sealing area is recessed to form at least one dividing groove, and the at least one dividing groove communicates with the side of the ring and forms two openings on the side of the ring, so that the dividing groove of each conductive frame can separate the extensions At least one of the arms and the load bearing zone.

本發明實施例又提供一種承載座模組,用以供數個發光二極體晶片安裝於其上,該承載座模組包括:數個金屬支架,其一體相連成單片構造,每一金屬支架包含有兩導電架與數個分別自該兩導電架一體延伸形成的延伸臂,每一導電架具有一正面、一背面、及相連於該正面與該背面周緣的一環側面,且每一導電架的正面定義有一密封區與一大致被該密封區所包圍的承載區;其中,每一導電架自其正面的密封區凹設形成有至少一分隔槽,且該至少一分隔槽連通於該環側面並於該環側面上形成兩開口,以使每一導電架的分隔槽能區隔開該延伸臂至少其中之一與該承載區;其中,每一金屬支架的兩導電架分別定義為一第一導電架與一第二導電架,沿一第一方向上的任兩相鄰金屬支架透過其中一 金屬支架的第一導電架延伸臂斜向地一體相連於其中另一金屬支架的第二導電架延伸臂,且該斜向一體相連的延伸臂大致與該第一方向相夾有一銳角;以及數個絕緣座,其包覆於該些金屬支架外緣。The embodiment of the present invention further provides a carrier module for mounting a plurality of LED chips thereon. The carrier module includes: a plurality of metal brackets integrally connected into a single piece structure, each metal The bracket comprises two conductive racks and a plurality of extending arms integrally extending from the two conductive racks, each of the conductive racks has a front surface, a back surface, and a ring side surface connected to the front surface and the back surface of the back surface, and each conductive layer The front surface of the frame defines a sealing area and a bearing area substantially surrounded by the sealing area; wherein each conductive frame is recessed from the sealing area of the front surface thereof to form at least one dividing groove, and the at least one dividing groove is connected to the Forming two openings on the side of the ring and on the side of the ring, so that the partitioning groove of each conductive frame can be separated from at least one of the extending arms and the carrying area; wherein the two conductive frames of each metal bracket are respectively defined as a first conductive frame and a second conductive frame are passed through one of the two adjacent metal brackets in a first direction The first conductive frame extending arm of the metal bracket is obliquely integrally connected to the second conductive frame extending arm of the other metal bracket, and the obliquely integrally connected extending arm is substantially at an acute angle with the first direction; An insulating seat covering the outer edges of the metal brackets.

綜上所述,本發明實施例所提供的發光二極體結構、發光二極體結構的金屬支架、及承載座模組,其透過形成有分隔槽,使絕緣體與導電架正面之間的結合性被有效地提升。再者,經由延伸臂滲入於導電架與絕緣體之間的水氣,能有效地被分隔槽與絕緣體相接合的部位所隔絕。並且,透過分隔槽的分布位置,以達到避免水氣入侵所述導電架承載區之功效。In summary, the LED structure, the metal bracket of the LED structure, and the carrier module provided by the embodiments of the present invention have a separation groove formed therebetween to bond the insulator to the front surface of the conductive frame. Sex is effectively promoted. Furthermore, the moisture that permeates between the conductive frame and the insulator via the extension arm can be effectively isolated by the portion where the separation groove is joined to the insulator. Moreover, through the distribution position of the separation groove, the effect of preventing moisture from invading the carrying area of the conductive frame is achieved.

為使能更進一步瞭解本發明之特徵及技術內容,請參閱以下有關本發明之詳細說明與附圖,但是此等說明與所附圖式僅係用來說明本發明,而非對本發明的權利範圍作任何的限制。The detailed description of the present invention and the accompanying drawings are to be understood by the claims The scope is subject to any restrictions.

100‧‧‧承載座100‧‧‧ bearing seat

1‧‧‧金屬支架1‧‧‧Metal bracket

11‧‧‧導電架11‧‧‧Conducting frame

111‧‧‧正面111‧‧‧ positive

1111‧‧‧密封區1111‧‧‧ Sealed area

1112‧‧‧承載區1112‧‧‧ Carrying area

1113‧‧‧分隔槽1113‧‧‧Separation slot

1113a、1113b‧‧‧開口1113a, 1113b‧‧‧ openings

112‧‧‧背面112‧‧‧Back

1121‧‧‧包覆區1121‧‧‧covered area

1122‧‧‧銲接區1122‧‧‧Weld area

113‧‧‧環側面113‧‧‧ ring side

114‧‧‧缺槽114‧‧‧ Missing slots

11a‧‧‧第一導電架11a‧‧‧First Conductor

111a‧‧‧凸出部111a‧‧‧protrusion

11b‧‧‧第二導電架11b‧‧‧Second conductive frame

111b‧‧‧凹陷部111b‧‧‧Depression

1111b‧‧‧凹槽1111b‧‧‧ Groove

12‧‧‧延伸臂12‧‧‧Extension arm

121‧‧‧末端面121‧‧‧End face

2‧‧‧絕緣座2‧‧‧Insulation seat

21‧‧‧絕緣隔離部21‧‧‧Insulation isolation

22‧‧‧容置孔22‧‧‧ accommodating holes

200‧‧‧發光二極體晶片200‧‧‧Light Diode Wafer

300‧‧‧透光件300‧‧‧Transparent parts

400‧‧‧承載座模組400‧‧‧Carriage module

D1‧‧‧第一方向D1‧‧‧ first direction

D2‧‧‧第二方向D2‧‧‧ second direction

圖1為本發明第一實施例的承載座之立體示意圖。1 is a perspective view of a carrier according to a first embodiment of the present invention.

圖2為圖1另一視角之立體示意圖。2 is a perspective view of another perspective of FIG. 1.

圖3為圖1中金屬支架之立體示意圖。3 is a perspective view of the metal bracket of FIG. 1.

圖4為圖1中金屬支架另一視角之立體示意圖。4 is a perspective view of another perspective view of the metal bracket of FIG. 1.

圖5為圖1沿A-A剖線的剖視示意圖。Figure 5 is a cross-sectional view taken along line A-A of Figure 1.

圖6A為本發明第一實施例的承載座另一實施態樣之立體示意圖。FIG. 6A is a perspective view of another embodiment of a carrier according to a first embodiment of the present invention.

圖6B為圖6A沿B-B剖線的剖視示意圖。Figure 6B is a cross-sectional view taken along line B-B of Figure 6A.

圖6C為圖6B中的C區塊之局部放大示意圖。FIG. 6C is a partially enlarged schematic view of the C block of FIG. 6B.

圖7為本發明第一實施例的發光二極體結構之立體示意圖。FIG. 7 is a perspective view showing the structure of a light emitting diode according to a first embodiment of the present invention.

圖8為本發明第一實施例的發光二極體結構另一實施態樣之立體示意圖。FIG. 8 is a perspective view showing another embodiment of the structure of the light emitting diode according to the first embodiment of the present invention.

圖9為本發明第一實施例的發光二極體結構又一實施態樣之立體示意圖。FIG. 9 is a perspective view showing still another embodiment of the structure of the light emitting diode according to the first embodiment of the present invention.

圖10為本發明第一實施例的承載座模組之立體示意圖。FIG. 10 is a perspective view of a carrier module according to a first embodiment of the present invention.

圖11為圖10中金屬支架之立體示意圖。Figure 11 is a perspective view of the metal bracket of Figure 10.

圖12為圖10中金屬支架另一視角之立體示意圖。Figure 12 is a perspective view of the metal stent of Figure 10 from another perspective.

圖13為圖10切割後的立體示意圖。Figure 13 is a perspective view of the cut of Figure 10.

圖14為本發明第二實施例的金屬支架之立體示意圖。Figure 14 is a perspective view of a metal bracket according to a second embodiment of the present invention.

圖15為圖14另一視角之立體示意圖。Figure 15 is a perspective view of another perspective of Figure 14.

圖16為本發明第二實施例的發光二極體結構之立體示意圖。Figure 16 is a perspective view showing the structure of a light-emitting diode according to a second embodiment of the present invention.

圖17為本發明第二實施例的發光二極體結構另一實施態樣之立體示意圖。Figure 17 is a perspective view showing another embodiment of a structure of a light-emitting diode according to a second embodiment of the present invention.

圖18為本發明第二實施例的發光二極體結構又一實施態樣之立體示意圖。Figure 18 is a perspective view showing still another embodiment of the structure of the light-emitting diode according to the second embodiment of the present invention.

[第一實施例][First Embodiment]

參閱圖1和圖2,提供一種QFN(quad flat no-lead)製程之發光二極體結構的承載座100。承載座100包含有一金屬支架1與一絕緣座2,上述金屬支架1具有兩間隔設置的導電架11與數個分別自該兩導電架11一體延伸形成的延伸臂12。Referring to FIG. 1 and FIG. 2, a carrier 100 for a light-emitting diode structure of a QFN (quad flat no-lead) process is provided. The carrier 100 includes a metal bracket 1 and an insulating seat 2, and the metal bracket 1 has two spaced-apart conductive racks 11 and a plurality of extending arms 12 integrally extending from the two conductive racks 11.

絕緣座2可由熱固性塑膠所製成,如環氧樹脂(Epoxy)、矽樹脂(Silicone),且絕緣座2包覆兩導電架11與延伸臂12,並使兩導電架11被絕緣座2所分離,所述兩導電架11的部分區域(即後述之承載區1112與銲接區1122)以及延伸臂12的末端面121顯露於絕緣座2之外,使得焊接區1122的表面及延伸臂12的末端面121與絕緣座2齊平。兩導電架11間的間隔被絕緣座2所充填,而絕緣座2充填於兩導電架11間的該部位定義為一絕緣隔離部21。值得注意的是,絕緣座2的材料並不以上述熱固性塑膠為限,也可採用熱塑性塑膠,如聚對苯二甲酸1,4-環己烷二甲酯(Poly1,4-cyclohexylene dimethylene terephthalate,簡稱PCT)。The insulating seat 2 can be made of thermosetting plastic, such as epoxy resin (Epoxy), silicone resin (Silicone), and the insulating seat 2 covers the two conductive frames 11 and the extending arm 12, and the two conductive frames 11 are insulated by the insulating seat 2. Separating, a partial region of the two conductive frames 11 (ie, the bearing region 1112 and the bonding region 1122 described later) and the end surface 121 of the extending arm 12 are exposed outside the insulating seat 2 such that the surface of the bonding region 1122 and the extending arm 12 are The end face 121 is flush with the insulating seat 2. The space between the two conductive frames 11 is filled by the insulating seat 2, and the portion of the insulating seat 2 filled between the two conductive frames 11 is defined as an insulating spacer 21. It is worth noting that the material of the insulating seat 2 is not limited to the above-mentioned thermosetting plastic, and a thermoplastic plastic such as poly 1,4-cyclohexylene dimethylene terephthalate (Poly1,4-cyclohexylene dimethylene terephthalate, Referred to as PCT).

參閱圖3並適時參酌圖1,兩導電架11為不同外型的一凸形第一導電架11a與一凹形第二導電架11b。所述兩導電架11各具 有一相同的預定厚度(T),每一導電架11定義有一正面111、一背面112、及相連於正面111與背面112周緣的一環側面113。每一導電架11正面111與背面112之間的最大距離即為上述預定厚度(T),並且每一導電架11的正面111定義有一密封區1111與一承載區1112。上述承載區1112大致被密封區1111所包圍,且承載區1112用以承載(固設)至少一發光二極體晶片或供打線連接之用。Referring to FIG. 3 and referring to FIG. 1 as appropriate, the two conductive frames 11 are a convex first conductive frame 11a and a concave second conductive frame 11b of different shapes. The two conductive frames 11 each have There is an identical predetermined thickness (T), and each of the conductive frames 11 defines a front surface 111, a back surface 112, and a ring side surface 113 connected to the periphery of the front surface 111 and the back surface 112. The maximum distance between the front surface 111 and the back surface 112 of each of the conductive frames 11 is the predetermined thickness (T), and the front surface 111 of each of the conductive frames 11 defines a sealing portion 1111 and a bearing portion 1112. The carrying area 1112 is substantially surrounded by the sealing area 1111, and the carrying area 1112 is used to carry (fix) at least one LED chip or for wire bonding.

密封區1111被絕緣座2所包覆,承載區1112則顯露於絕緣座2之外,所述兩導電架11的承載區1112大致位於密封區1111之間,且兩導電架11的正面111及位於兩導電架11之間的絕緣隔離部21頂面大致呈共平面設置。The sealing area 1111 is covered by the insulating seat 2, and the bearing area 1112 is exposed outside the insulating seat 2. The bearing area 1112 of the two conductive frames 11 is substantially located between the sealing areas 1111, and the front surface 111 of the two conductive frames 11 and The top surface of the insulating spacer 21 between the two conductive frames 11 is substantially coplanar.

絕緣座2頂面的大致中央處凹設形成有一大致呈圓槽狀的容置孔22,並且每一導電架11正面111的承載區1112經由上述容置孔22而露出於絕緣座2之外。上述容置孔22可以如圖1所示為圓槽狀,而於實際應用時,容置孔22亦可以形成如方槽狀等構造。A receiving hole 22 is formed in a substantially circular groove shape at a substantially central portion of the top surface of the insulating base 2, and the bearing portion 1112 of the front surface 111 of each of the conductive frames 11 is exposed outside the insulating seat 2 via the receiving hole 22 . The receiving hole 22 can be a circular groove shape as shown in FIG. 1 , and in actual application, the receiving hole 22 can also be formed in a square groove shape or the like.

每一導電架11自其正面111的密封區1111凹設(如:蝕刻)形成有兩大致呈三角狀構造的分隔槽1113,且每一分隔槽1113連通於上述環側面113並於環側面113上形成大小相異的兩開口1113a、1113b,以使每一分隔槽1113能區隔開至少一延伸臂12頂面與承載區1112。進一步地說,於每一分隔槽1113中,其較小的開口1113a朝向導電架11內部,且形成在該三角狀構造的其中一角落,而較大的開口1113b朝向導電架11外部,且形成在該角落的對邊,三角狀構造的斜邊大致上沿著圓槽狀的弧線延伸。再者,分隔槽1113的凹陷深度較佳為二分之一的預定厚度(1/2T),但不以此為限,上述分隔槽1113的凹陷深度可大致為四分之一的預定厚度(1/4T)至四分之三的預定厚度(3/4T)。值得注意的是,分隔槽1113與圓槽狀容置孔22至少距離100微米,使得絕緣座2 可以足夠包覆兩導電架11與延伸臂12。Each of the conductive frames 11 is recessed (eg, etched) from the sealing portion 1111 of the front surface 111 to form two substantially triangular-shaped partitioning grooves 1113, and each of the dividing grooves 1113 communicates with the ring side surface 113 and on the ring side surface 113. Two openings 1113a, 1113b of different sizes are formed on the upper portion so that each of the partitioning grooves 1113 can partition at least one top surface of the extending arm 12 from the bearing area 1112. Further, in each of the separation grooves 1113, the smaller opening 1113a faces the inside of the conductive frame 11 and is formed at one corner of the triangular structure, and the larger opening 1113b faces the outside of the conductive frame 11 and is formed. At the opposite side of the corner, the oblique side of the triangular structure extends substantially along the arc of the circular groove. Moreover, the recess depth of the partition groove 1113 is preferably a predetermined thickness (1/2T) of one-half, but not limited thereto, the recess depth of the partition groove 1113 may be approximately one quarter of a predetermined thickness ( 1/4T) to three-quarters of the predetermined thickness (3/4T). It should be noted that the separation groove 1113 and the circular groove-shaped receiving hole 22 are at least 100 micrometers apart, so that the insulating seat 2 It is sufficient to cover the two conductive frames 11 and the extension arms 12.

兩導電架11的分隔槽1113各形成未封閉的三角半蝕結構,該些分隔槽1113為圍繞絕緣座2容置孔22設置,且位於金屬支架1的四周角落。藉此,透過形成有分隔槽1113,以使導電架11正面111呈現高低起伏的構造,進而令絕緣座2與導電架11正面111之間的結合性被有效地提升。再者,分隔槽1113與絕緣座2相接合的部位,由於兩者的結合性較周圍高,因而使得經由延伸臂12滲入於導電架11與絕緣座2之間的水氣,能有效地被分隔槽1113與絕緣座2相接合的部位所隔絕。並且,透過分隔槽1113的分布位置,以達到避免水氣入侵所述導電架11的承載區1112之功效。The partitioning grooves 1113 of the two conductive frames 11 each form an unclosed triangular semi-etched structure, and the partitioning grooves 1113 are disposed around the receiving holes 22 of the insulating seat 2 and are located at the corners of the metal bracket 1 . Thereby, the partitioning groove 1113 is formed so that the front surface 111 of the conductive frame 11 exhibits a high and low undulation, and the bond between the insulating seat 2 and the front surface 111 of the conductive frame 11 is effectively improved. Further, since the portion where the partitioning groove 1113 is joined to the insulating base 2 is higher in bonding property than the surrounding portion, the moisture which permeates between the conductive frame 11 and the insulating seat 2 via the extending arm 12 can be effectively The partition groove 1113 is isolated from the portion where the insulating seat 2 is joined. Moreover, the distribution position of the partitioning groove 1113 is transmitted to achieve the effect of preventing moisture from intruding into the bearing area 1112 of the conductive frame 11.

於每一導電架11中,所述環側面113對應於每一分隔槽1113的較小開口1113a之部位形成一由正面111貫通至背面112的缺槽114。藉此,因應承載座100設計時,為求最大固晶及散熱區域,而使導電架11與絕緣座2之結合面積變少的情況,絕緣座2能透過結合於缺槽114之角狀延伸邊料穿透結構,以提升絕緣座2與導電架11之間的結合力。In each of the conductive frames 11, a portion of the ring side 113 corresponding to the smaller opening 1113a of each of the partitioning grooves 1113 forms a notch 114 that penetrates from the front surface 111 to the back surface 112. Therefore, in order to minimize the bonding area between the conductive frame 11 and the insulating seat 2 in order to obtain the maximum solid crystal and heat dissipation region in the design of the carrier 100, the insulating seat 2 can be permeablely coupled to the angular extension of the notch 114. The edge material penetrates the structure to enhance the bonding force between the insulating seat 2 and the conductive frame 11.

請參閱圖4並適時參酌圖2所示,每一導電架11的背面112定義有一包覆區1121與一銲接區1122。其中,包覆區1121是自背面112周緣(亦即,背面112鄰接於環側面113之部位)所凹設形成(如:蝕刻)的槽狀構造。包覆區1121被絕緣座2所包覆,而銲接區1122則顯露於絕緣座2之外。每一導電架11的銲接區1122大致位於其包覆區1121內側,而兩導電架11的銲接區1122及連接於兩導電架11的絕緣座2底面大致呈共平面設置。Referring to FIG. 4 and as appropriate, as shown in FIG. 2, the back surface 112 of each of the conductive frames 11 defines a cladding region 1121 and a soldering region 1122. The cladding region 1121 is a groove-like structure formed by recessing (eg, etching) from the periphery of the back surface 112 (that is, the portion of the back surface 112 adjacent to the ring side surface 113). The cladding region 1121 is covered by the insulating holder 2, and the bonding region 1122 is exposed outside the insulating holder 2. The soldering area 1122 of each of the conductive frames 11 is located substantially inside the covering area 1121, and the soldering area 1122 of the two conductive frames 11 and the bottom surface of the insulating base 2 connected to the two conductive racks 11 are substantially coplanar.

環側面113的厚度大致為二分之一的預定厚度(1/2T),但不以此為限,環側面113的厚度可大致為四分之一的預定厚度(1/4T)至四分之三的預定厚度(3/4T)。The thickness of the ring side surface 113 is approximately one-half of a predetermined thickness (1/2T), but not limited thereto, the thickness of the ring side surface 113 may be approximately one quarter of a predetermined thickness (1/4T) to four points. The predetermined thickness of the third (3/4T).

所述延伸臂12分別自每一導電架11的環側面113一體延伸 所形成,且延伸臂12的厚度大致等同於環側面113的厚度。亦即,延伸臂12的厚度為四分之一的預定厚度(1/4T)至四分之三的預定厚度(3/4T),延伸臂12的厚度於本實施例為二分之一的預定厚度(1/2T)。換個角度來看,延伸臂12的厚度大致等同於形成有分隔槽1113的導電架11部位之厚度。The extension arms 12 extend integrally from the ring side 113 of each of the conductive frames 11 Formed, and the thickness of the extension arm 12 is substantially equivalent to the thickness of the ring side 113. That is, the thickness of the extension arm 12 is a predetermined thickness (1/4T) to a predetermined thickness (3/4T) of a quarter, and the thickness of the extension arm 12 is one-half of the embodiment. The predetermined thickness (1/2T). Viewed from another angle, the thickness of the extension arm 12 is substantially equal to the thickness of the portion of the conductive frame 11 on which the separation groove 1113 is formed.

請參閱圖5並適時參酌圖3和圖4,上述凸形第一導電架11a設有一凸出部111a,凹形第二導電架11b於對應該凸出部111a的部位設有對應於上述凸出部111a的一凹陷部111b。其中,凸出部111a之下表面即為上述呈槽狀構造的包覆區1121,而凹陷部111b之上表面凹設有一凹槽1111b,藉以使得填充於兩導電架11之間的塑料呈現上下錯位,以強化絕緣隔離部21,並藉由上下均有外延伸塑料阻絕水氣入侵,來強化絕緣座2與導電架11之間的結合力。Referring to FIG. 5 and referring to FIG. 3 and FIG. 4 as appropriate, the convex first conductive frame 11a is provided with a protruding portion 111a, and the concave second conductive frame 11b is disposed at a portion corresponding to the protruding portion 111a corresponding to the convex portion. A recessed portion 111b of the outlet portion 111a. The lower surface of the protruding portion 111a is the above-mentioned groove-shaped structure of the cladding portion 1121, and the upper surface of the recessed portion 111b is recessed with a recess 1111b, so that the plastic filled between the two conductive frames 11 is presented. The misalignment is used to strengthen the insulating partition portion 21, and the joint force between the insulating seat 2 and the conductive frame 11 is strengthened by the outer and outer plastics extending to prevent moisture intrusion.

本發明的金屬支架1選用凸形的第一導電架11a與凹形的第二導電架11b,以藉由凹凸配合的導電架11達到克服側向機械剪力之效果,並進而有效地解決上述導電架11與絕緣隔離部21剝離之現象。The metal bracket 1 of the present invention selects the convex first conductive frame 11a and the concave second conductive frame 11b to overcome the lateral mechanical shearing force by the concave-convex conductive frame 11 and effectively solve the above problem. The phenomenon that the conductive frame 11 is separated from the insulating spacer 21 is obtained.

如圖6A,所述絕緣隔離部21位於容置孔22的部位,其突出並高於兩側的第一與第二導電架11a、11b之承載區1112,藉以達到減少水氣入侵之效果,並防止晶片發出的光從底部漏出。更詳細地說,如圖6B和圖6C所示,上述絕緣隔離部21位於容置孔22的部位,其相較於兩側的第一與第二導電架11a、11b之承載區1112而言,較佳可突出300-500微米,並且覆蓋在所述承載區1112的截面寬度較佳為300-500微米,除了有效地阻隔水氣由承載座100底面入侵外,還可避免因絕緣隔離部21的遮擋到晶片出光角度,而影響到封裝結構的出光亮度。As shown in FIG. 6A, the insulating isolation portion 21 is located at a portion of the receiving hole 22, and protrudes from the bearing portion 1112 of the first and second conductive frames 11a and 11b on both sides, thereby reducing the effect of moisture intrusion. And prevent the light emitted by the wafer from leaking out from the bottom. In more detail, as shown in FIG. 6B and FIG. 6C, the insulating spacer portion 21 is located at the portion of the accommodating hole 22, which is compared with the bearing portion 1112 of the first and second conductive frames 11a, 11b on both sides. Preferably, it can protrude 300-500 micrometers, and the cross-sectional width of the bearing area 1112 is preferably 300-500 micrometers, in addition to effectively blocking moisture from being invaded by the bottom surface of the bearing base 100, and the insulating isolation portion can be avoided. The occlusion of 21 to the exit angle of the wafer affects the brightness of the package structure.

再者,上述承載座100能搭配其他元件而形成一發光二極體結構。具體來說,請參閱圖7所示,其為一種發光二極體結構, 包含所述承載座100、裝設於承載座100上的兩發光二極體晶片200、及設置於承載座100且密封發光二極體晶片200的透光件300(如:透鏡)。Furthermore, the carrier 100 can be combined with other components to form a light emitting diode structure. Specifically, please refer to FIG. 7 , which is a light emitting diode structure. The carrier 100 includes two light-emitting diode chips 200 mounted on the carrier 100, and a light-transmitting member 300 (such as a lens) disposed on the carrier 100 and sealing the LED wafer 200.

發光二極體晶片200之型態可以是打線式、覆晶式。發光二極體晶片200位於絕緣座2的容置孔22內且裝設於第一導電架11a的承載區1112上,發光二極體晶片200透過打線而分別電性連接於第一導電架11a與第二導電架11b。所述透光件300部分充填於絕緣座2的容置孔22內,以密封發光二極體晶片200,而透光件300的其餘部分則顯露於絕緣座2頂面之外並形成半球狀的構造。另,上述透光件300亦能形成如圖8之構造,亦即,透光件300填平於上述容置孔22內,且透光件300頂面與絕緣座2頂面呈共平面。The shape of the LED wafer 200 can be wire-bonded or flip-chip. The illuminating diode 200 is disposed in the accommodating hole 22 of the insulating base 2 and is disposed on the carrying area 1112 of the first conductive frame 11a. The illuminating diode 200 is electrically connected to the first conductive frame 11a by wire bonding. And the second conductive frame 11b. The light transmissive member 300 is partially filled in the accommodating hole 22 of the insulating seat 2 to seal the illuminating diode chip 200, and the remaining portion of the light transmitting member 300 is exposed outside the top surface of the insulating seat 2 and formed into a hemispherical shape. Construction. In addition, the light transmissive member 300 can also be formed as shown in FIG. 8 , that is, the light transmissive member 300 is filled in the accommodating hole 22 , and the top surface of the light transmissive member 300 is coplanar with the top surface of the insulating seat 2 .

發光二極體結構亦能僅由所述金屬支架1、發光二極體晶片200與透光件300所構成。如圖9所示,透光件300直接一體包覆導電架11與發光二極體晶片200,以形成發光二極體結構。換言之,發光二極體結構亦能以透光件300取代絕緣座2。其中,兩導電架11的背面112的焊接區1122以及該些延伸臂12的末端面121顯露於透光件300之外。The light-emitting diode structure can also be composed only of the metal holder 1, the light-emitting diode wafer 200, and the light-transmitting member 300. As shown in FIG. 9, the light transmissive member 300 directly covers the conductive frame 11 and the LED substrate 200 to form a light emitting diode structure. In other words, the light-emitting diode structure can also replace the insulating seat 2 with the light-transmitting member 300. The soldering area 1122 of the back surface 112 of the two conductive frames 11 and the end surface 121 of the extending arms 12 are exposed outside the light transmitting member 300.

總合來說,本實施例的發光二極體結構是由金屬支架1、設置於金屬支架1上的發光二極體晶片200、及包覆於金屬支架1與發光二極體晶片200的一絕緣體所構成。In summary, the LED structure of the present embodiment is a metal holder 1 , a light emitting diode chip 200 disposed on the metal holder 1 , and a cover of the metal holder 1 and the LED array 200 . Made up of insulators.

其中,當發光二極體結構為圖7或圖8之態樣時,絕緣體包含非透光的絕緣座2與透光件300。當發光二極體結構為圖9之態樣時,絕緣體則限定為透光件300。但無論發光二極體結構為何種態樣,所述兩導電架11的背面112的焊接區1122以及該些延伸臂12的末端面121皆需顯露於絕緣體之外。Wherein, when the structure of the light emitting diode is the aspect of FIG. 7 or FIG. 8 , the insulator comprises the insulating seat 2 and the light transmitting member 300 that are not transparent to light. When the structure of the light emitting diode is the same as that of FIG. 9, the insulator is defined as the light transmitting member 300. However, regardless of the structure of the light-emitting diode structure, the land 1122 of the back surface 112 of the two conductive frames 11 and the end faces 121 of the extending arms 12 need to be exposed outside the insulator.

此外,本實施例所述及之單個承載座100,其在被製造時是經由切割一承載座模組400而形成(如圖10)。具體而言,承載座模 組400包含有數個相連成一體的承載座100,用以供數個發光二極體晶片200安裝於其上。為便於說明,本實施例的圖式僅以部分承載座100說明。In addition, the single carrier 100 described in this embodiment is formed by cutting a carrier module 400 when manufactured (see FIG. 10). Specifically, the bearing mold The set 400 includes a plurality of integrally connected carriers 100 for mounting a plurality of light emitting diode chips 200 thereon. For ease of explanation, the drawings of the present embodiment are illustrated only by the partial carrier 100.

在形成該承載座模組400之前,先形成一體相連為單片構造的數個金屬支架1(請參閱圖11和圖12)。其中,若由一第一方向D1來看,每一金屬支架1的第一導電架11a分別與位於其相反兩側的第一導電架11a透過各自的延伸臂12一體相連。而每一金屬支架1的第二導電架11b分別與位於其相反兩側的第二導電架11b透過各自的延伸臂12一體相連,且該些相連接的延伸臂12大致平行於第一方向D1。若由垂直於上述第一方向D1的一第二方向D2來看,任兩相鄰的金屬支架1透過其中一金屬支架1的第一導電架11a延伸臂12與其中另一金屬支架1的第二導電架11b延伸臂12一體相連接,且該些相連接的延伸臂12大致平行於第二方向D2。Prior to forming the carrier module 400, a plurality of metal brackets 1 integrally connected in a single piece configuration are formed (see FIGS. 11 and 12). When viewed from a first direction D1, the first conductive frame 11a of each metal bracket 1 is integrally connected to the first conductive frame 11a on the opposite sides thereof through the respective extension arms 12. The second conductive frame 11b of each metal bracket 1 is integrally connected with the second conductive frame 11b on the opposite sides thereof through the respective extending arms 12, and the connected extending arms 12 are substantially parallel to the first direction D1. . If viewed from a second direction D2 perpendicular to the first direction D1, any two adjacent metal brackets 1 pass through the first conductive frame 11a of one of the metal brackets 1 and extend the arm 12 and the other of the metal brackets 1 The two conductive frames 11b extend the arms 12 integrally connected, and the connected extending arms 12 are substantially parallel to the second direction D2.

除上述大致平行於第一方向D1或第二方向D2的延伸臂12之外,當由第一方向D1來看,任兩相鄰的金屬支架1透過其中一金屬支架1的第一導電架11a延伸臂12斜向地一體相連於其中另一金屬支架1的第二導電架11b延伸臂12,且該些相連接的延伸臂12大致與第一方向D1相夾有一銳角。藉此,兩相鄰的金屬支架1透過上述斜向相連的延伸臂12,以增強該兩相鄰金屬支架1之間的穩定度,進而利於提升後續成形絕緣座2時的射出良率、及降低後續製程中因溢膠產生毛邊的可能性。In addition to the extending arm 12 substantially parallel to the first direction D1 or the second direction D2, any two adjacent metal brackets 1 pass through the first conductive frame 11a of one of the metal brackets 1 when viewed from the first direction D1. The extension arm 12 is obliquely integrally connected to the second conductive frame 11b extension arm 12 of the other metal bracket 1, and the connected extension arms 12 are substantially at an acute angle with the first direction D1. Thereby, the two adjacent metal brackets 1 pass through the obliquely extending extending arms 12 to enhance the stability between the two adjacent metal brackets 1 , thereby facilitating the improvement of the injection yield when the insulating seat 2 is subsequently formed, and Reduce the possibility of burrs from spilling glue in subsequent processes.

當該些相連為一體的金屬支架1外緣成形有相連為一體的多個絕緣座2,以形成數個相連成一體的承載座100之後,實施一切割步驟,以使該些相連成一體的承載座100被切割為數個彼此分離的承載座100(如圖13)。When the outer edges of the integrally connected metal brackets 1 are formed with a plurality of insulating seats 2 integrally connected to form a plurality of integrally connected carrier seats 100, a cutting step is performed to make the connected bodies integrated The carrier 100 is cut into a plurality of carriers 100 that are separated from one another (Fig. 13).

其中,透過延伸臂12的厚度小於導電架11的預定厚度,如,延伸臂12的厚度為四分之一的預定厚度(1/4T)至四分之三的預定 厚度(3/4T)。藉此,於切割步驟中,能減少刀具所需切割之延伸臂12厚度,進而降低刀具損耗且能減少毛邊的產生機率,並且可有效避免延伸臂12末端面121(切斷點)與絕緣座2產生剝離現象,以減緩水氣由延伸臂12入侵之速度。Wherein, the thickness of the through-extension arm 12 is smaller than a predetermined thickness of the conductive frame 11, for example, the thickness of the extension arm 12 is a predetermined thickness (1/4T) to three-quarters of a quarter. Thickness (3/4T). Thereby, in the cutting step, the thickness of the extension arm 12 required for cutting the tool can be reduced, thereby reducing the tool loss and reducing the generation probability of the burr, and effectively avoiding the end face 121 (cutting point) and the insulating seat of the extension arm 12 2 A peeling phenomenon occurs to slow the rate at which moisture is invaded by the extension arm 12.

[第二實施例][Second embodiment]

參閱圖14至圖18,其為本發明的第二實施例,本實施例與上述第一實施例類似,相同處則不再複述,而兩者的差異主要在於導電架11上的分隔槽1113,具體說明如下。Referring to FIG. 14 to FIG. 18, which is a second embodiment of the present invention, the present embodiment is similar to the first embodiment described above, and the same portions are not described again, and the difference between the two is mainly in the separation slot 1113 on the conductive frame 11. The specific description is as follows.

如圖14和圖15所示,每一導電架11自其正面111的密封區1111凹設(如:蝕刻)形成有一大致呈U字狀構造且具有相等寬度的分隔槽1113,上述兩U字狀分隔槽1113沿絕緣座2的容置孔22外側分布以包圍所述承載區1112。進一步地說,所述兩導電架11的分隔槽1113圍繞於承載區1112外,並位於金屬支架1的外周緣之內。亦即,所述兩導電架11的分隔槽1113的內緣大於等於承載區1112外緣,而所述兩導電架11的分隔槽1113的外緣小於等於金屬支架1的外緣。As shown in FIG. 14 and FIG. 15, each of the conductive frames 11 is recessed (eg, etched) from the sealing portion 1111 of the front surface 111 thereof to form a partitioning groove 1113 having a substantially U-shaped configuration and having an equal width. The partitioning groove 1113 is distributed along the outside of the accommodating hole 22 of the insulating seat 2 to surround the bearing area 1112. Further, the partitioning groove 1113 of the two conductive frames 11 surrounds the bearing area 1112 and is located inside the outer circumference of the metal bracket 1. That is, the inner edge of the partitioning groove 1113 of the two conductive frames 11 is greater than or equal to the outer edge of the bearing zone 1112, and the outer edge of the dividing groove 1113 of the two conductive frames 11 is less than or equal to the outer edge of the metal bracket 1.

每一分隔槽1113連通於兩導電架11架彼此相向的環側面113,並且U字狀分隔槽1113的兩末端於環側面113上形成大小大致相同的兩開口1113a(亦即,分隔槽1113的兩開口1113a分別形成於U字狀構造的兩末端),以使每一分隔槽1113區隔開承載區1112與所有延伸臂12頂面。Each of the partitioning grooves 1113 communicates with the ring side surfaces 113 of the two conductive frames 11 facing each other, and the two ends of the U-shaped dividing grooves 1113 form two openings 1113a of substantially the same size on the ring side surface 113 (that is, the partitioning grooves 1113 Two openings 1113a are formed at both ends of the U-shaped configuration, respectively, such that each of the separation grooves 1113 is spaced apart from the load-bearing area 1112 and the top surface of all of the extension arms 12.

於本實施例的分隔槽1113凹陷深度大致為二分之一的預定厚度(1/2T),而寬度小於等於1T,但不以此為限。上述分隔槽1113的凹陷深度可為四分之一的預定厚度(1/4T)至四分之三的預定厚度(3/4T)。The partitioning groove 1113 of the present embodiment has a recessed depth of approximately one-half of a predetermined thickness (1/2T) and a width of less than or equal to 1T, but is not limited thereto. The recessed depth of the above-described separation groove 1113 may be a predetermined thickness (3/4T) of a predetermined thickness (1/4T) to three-quarters of a quarter.

再者,於每一導電架11中,所述環側面113對應於每一分隔槽1113的兩開口1113a之部位各形成一由正面111貫通至背面112的缺槽114。Furthermore, in each of the conductive frames 11, the ring side surface 113 defines a notch 114 that penetrates from the front surface 111 to the back surface 112 corresponding to each of the two openings 1113a of each of the partitioning grooves 1113.

另,本實施例所述之發光二極體結構亦能形成如同第一實施例圖7至圖9所示之構造。如:圖16所示為本實施例發光二極體結構對應於第一實施例圖7所示之構造;圖17所示為本實施例發光二極體結構對應於第一實施例圖8所示之構造;圖18所示為本實施例發光二極體結構對應於第一實施例圖9所示之構造。In addition, the light-emitting diode structure described in this embodiment can also be constructed as shown in FIGS. 7 to 9 of the first embodiment. For example, FIG. 16 shows the structure of the light-emitting diode of the present embodiment corresponding to the structure shown in FIG. 7 of the first embodiment; FIG. 17 shows the structure of the light-emitting diode of the present embodiment corresponding to FIG. 8 of the first embodiment. The configuration shown in Fig. 18 shows the structure of the light-emitting diode of the present embodiment corresponding to that shown in Fig. 9 of the first embodiment.

[本發明實施例的可能功效][Possible effects of embodiments of the present invention]

綜上所述,本發明實施例透過形成有分隔槽,以令絕緣座與導電架正面之間的結合性被有效地提升,進而令經由延伸臂滲入於導電架與絕緣座之間的水氣,能有效地被分隔槽與絕緣座相接合的部位所隔絕。並且,透過分隔槽的分布位置,以達到避免水氣入侵所述導電架的承載區之功效。另,絕緣座能透過結合於缺槽之角狀延伸邊料穿透結構,以提升絕緣座與導電架之間的結合力。In summary, the embodiment of the present invention forms a partitioning groove so that the bond between the insulating seat and the front surface of the conductive frame is effectively lifted, thereby allowing water and gas to penetrate between the conductive frame and the insulating seat via the extending arm. It can be effectively isolated by the portion where the partition groove is joined to the insulating seat. Moreover, the distribution position of the separation groove is transmitted to achieve the effect of preventing moisture from intruding into the bearing area of the conductive frame. In addition, the insulating seat can penetrate the corner extending structure of the rim by the gusset to improve the bonding force between the insulating seat and the conductive frame.

更詳細的說,在第一實施例中,容置孔形狀為圓槽狀,分隔槽因應圓槽狀的容置孔,在有限的密封區內設計出座落在導電架四個角落且連通環側面的三角半蝕結構,來增加絕緣座與導電架的結合力。在第二實施例中,容置孔為方槽狀,分隔槽因應方槽狀的容置孔,延方槽狀容置孔的外緣設計出U字狀分隔槽,增加了絕緣座與導電架的結合力。In more detail, in the first embodiment, the shape of the receiving hole is a circular groove shape, and the partitioning groove is designed to be seated in the four corners of the conductive frame in a limited sealing area in response to the circular groove-shaped receiving hole. The triangular semi-etched structure on the side of the ring increases the bonding force between the insulating seat and the conductive frame. In the second embodiment, the accommodating hole is in the shape of a square groove, and the partitioning groove is formed with a U-shaped separating groove corresponding to the groove-shaped accommodating hole of the square groove-shaped accommodating hole, and the insulating seat and the conductive frame are added. The combination of strength.

本發明實施例所提供的金屬支架,其藉由凹凸配合的兩導電架達到克服側向機械剪力之效果,並有效地解決上述導電架與絕緣隔離部剝離之現象。再者,透過凸出部之下表面呈槽狀構造,而凹陷部之上表面設有凹槽,使得填充於兩導電架之間的塑料呈現上下錯位,以強化絕緣隔離部,並藉由上下均有外延伸塑料阻絕水氣入侵,來強化絕緣座與導電架之間的結合力。The metal bracket provided by the embodiment of the invention achieves the effect of overcoming the lateral mechanical shearing force by the two conductive brackets which are combined with the concave and convex, and effectively solves the phenomenon that the conductive frame and the insulating spacer are peeled off. Furthermore, the lower surface of the protruding portion has a groove-like structure, and the upper surface of the concave portion is provided with a groove, so that the plastic filled between the two conductive frames is displaced up and down to strengthen the insulating partition, and Both have extended plastics to prevent water and gas intrusion, and strengthen the bonding force between the insulating seat and the conductive frame.

本發明實施例所提供的承載座模組中,任兩相鄰的金屬支架透過斜向相連的延伸臂,以增強該兩相鄰金屬支架之間的穩定 度,進而利於提升後續成形絕緣座時的射出良率、及降低後續製程中因溢膠產生毛邊的可能性。再者,透過延伸臂的厚度小於導電架的預定厚度,藉以在切割步驟中,減少刀具所需切割之延伸臂厚度,進而降低刀具損耗且能減少毛邊的產生機率,並且可有效避免延伸臂末端面與絕緣座產生剝離現象,以減緩水氣由延伸臂入侵之速度。In the carrier module provided by the embodiment of the present invention, any two adjacent metal brackets are transmitted through the obliquely extending extending arms to enhance the stability between the two adjacent metal brackets. The degree is further improved by the yield of the subsequent forming of the insulating seat and the possibility of burrs due to the overflow of the subsequent process. Moreover, the thickness of the extending arm is smaller than the predetermined thickness of the conductive frame, thereby reducing the thickness of the extending arm required for cutting the cutting tool in the cutting step, thereby reducing tool loss and reducing the probability of generation of the burr, and effectively avoiding the end of the extended arm The surface and the insulating seat are peeled off to slow the intrusion of water vapor by the extension arm.

以上所述僅為本發明之較佳可行實施例,其並非用以侷限本發明之專利範圍,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。The above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the invention, and the equivalent variations and modifications of the scope of the invention are intended to be within the scope of the invention.

1‧‧‧金屬支架1‧‧‧Metal bracket

11‧‧‧導電架11‧‧‧Conducting frame

111‧‧‧正面111‧‧‧ positive

1111‧‧‧密封區1111‧‧‧ Sealed area

1112‧‧‧承載區1112‧‧‧ Carrying area

1113‧‧‧分隔槽1113‧‧‧Separation slot

1113a、1113b‧‧‧開口1113a, 1113b‧‧‧ openings

112‧‧‧背面112‧‧‧Back

113‧‧‧環側面113‧‧‧ ring side

114‧‧‧缺槽114‧‧‧ Missing slots

11a‧‧‧第一導電架11a‧‧‧First Conductor

111a‧‧‧凸出部111a‧‧‧protrusion

11b‧‧‧第二導電架11b‧‧‧Second conductive frame

111b‧‧‧凹陷部111b‧‧‧Depression

1111b‧‧‧凹槽1111b‧‧‧ Groove

12‧‧‧延伸臂12‧‧‧Extension arm

121‧‧‧末端面121‧‧‧End face

Claims (12)

一種發光二極體結構,包括:一金屬支架,其具有兩間隔設置的導電架與數個分別自該兩導電架一體延伸形成的延伸臂,每個導電架具有一預定厚度,每一導電架具有一正面、一背面、及相連於該正面與該背面周緣的一環側面,且每一導電架的正面定義有一密封區與一大致被該密封區所包圍的承載區;其中,每一導電架自其正面的密封區凹設形成有至少一分隔槽,每個分隔槽的凹陷深度可大致為四分之一的該預定厚度至四分之三的該預定厚度,且該至少一分隔槽連通於該環側面並於該環側面上形成兩開口,以使每一導電架的分隔槽能區隔開該些延伸臂的至少其中之一與該承載區;一發光二極體晶片,裝設於該金屬支架的承載區上並電性連接於該兩導電架;以及一絕緣體,其包覆於該金屬支架,且該兩導電架的背面部分區域以及該些延伸臂的末端面顯露於該絕緣體之外。 A light-emitting diode structure includes: a metal bracket having two spaced-apart conductive frames and a plurality of extending arms integrally extending from the two conductive frames, each conductive frame having a predetermined thickness, each conductive frame Having a front surface, a back surface, and a ring side surface connected to the front surface and the back surface of the back surface, and a front surface of each conductive frame defines a sealing area and a bearing area substantially surrounded by the sealing area; wherein each conductive frame Forming at least one separation groove from the sealing portion of the front surface thereof, each of the separation grooves may have a depression depth of approximately one quarter of the predetermined thickness to three quarters of the predetermined thickness, and the at least one separation groove is connected Forming two openings on the side of the ring and on the side of the ring, so that the partitioning groove of each conductive frame can be separated from at least one of the extending arms and the carrying area; a light emitting diode chip is mounted And electrically connected to the two conductive frames on the carrying area of the metal bracket; and an insulator covering the metal bracket, and the back surface portion of the two conductive racks and the end faces of the extending arms Exposed to the outside of the insulator. 如請求項1所述之發光二極體結構,其中,該絕緣體包含有一絕緣座,該絕緣座包覆在該兩導電架與該些延伸臂,且該兩導電架間的間隔被該絕緣座所充填,以使該兩導電架被該絕緣座所分離,該兩導電架的正面承載區與背面部分區域以及該些延伸臂的末端面顯露於該絕緣座之外。 The illuminating diode structure of claim 1, wherein the insulator comprises an insulating seat, the insulating seat covers the two conductive frames and the extending arms, and the spacing between the two conductive frames is the insulating seat The two conductive frames are filled by the insulating seat, and the front bearing area and the back side portion of the two conductive frames and the end faces of the extending arms are exposed outside the insulating seat. 如請求項2所述之發光二極體結構,其中,而該絕緣座充填於該兩導電架間的部位定義為一絕緣隔離部,而該絕緣隔離部表面齊平或突伸出該兩導電架的正面承載區。 The illuminating diode structure of claim 2, wherein the portion of the insulating seat filled between the two conductive frames is defined as an insulating spacer, and the surface of the insulating spacer is flush or protrudes from the two conductive portions. The front bearing area of the rack. 如請求項2所述之發光二極體結構,其中,該絕緣座頂面的凹設形成有一容置孔,且每一導電架正面的承載區經由該容置孔而露出於該絕緣座之外,該發光二極體晶片位於該絕緣座的容置孔內,該絕緣體進一步包含有一透光件,該透光件至少部分 充填於該絕緣座的容置孔內,以密封該發光二極體晶片。 The illuminating diode structure of claim 2, wherein the recessed surface of the insulating seat is formed with a receiving hole, and the bearing area of the front surface of each conductive frame is exposed to the insulating seat via the receiving hole The light emitting diode chip is located in the receiving hole of the insulating seat, and the insulator further includes a light transmitting member, the light transmitting member is at least partially The accommodating hole of the insulating seat is filled to seal the illuminating diode chip. 如請求項1所述之發光二極體結構,其中,該絕緣體進一步限定為一透光件,該透光件一體包覆該金屬支架與該發光二極體晶片,且該兩導電架的背面部分區域以及該些延伸臂的末端面顯露於該透光件之外。 The light emitting diode structure of claim 1, wherein the insulator is further defined as a light transmissive member, the light transmissive member integrally covering the metal bracket and the light emitting diode chip, and the back sides of the two conductive frames The partial regions and the end faces of the extension arms are exposed outside the light transmissive member. 一種承載座模組,用以供數個發光二極體晶片安裝於其上,該承載座模組包括:數個金屬支架,其一體相連成單片構造,每一金屬支架包含有兩導電架與數個分別自該兩導電架一體延伸形成的延伸臂,每個導電架具有一預定厚度,每一導電架具有一正面、一背面、及相連於該正面與該背面周緣的一環側面,且每一導電架的正面定義有一密封區與一大致被該密封區所包圍的承載區;其中,每一導電架自其正面的密封區凹設形成有至少一分隔槽,每個分隔槽的凹陷深度可大致為四分之一的該預定厚度至四分之三的該預定厚度,且該至少一分隔槽連通於該環側面並於該環側面上形成兩開口,以使每一導電架的分隔槽能區隔開該延伸臂至少其中之一與該承載區;其中,每一金屬支架的兩導電架分別定義為一第一導電架與一第二導電架,沿一第一方向上的任兩相鄰金屬支架透過其中一金屬支架的第一導電架延伸臂斜向地一體相連於其中另一金屬支架的第二導電架延伸臂,且該斜向一體相連的延伸臂大致與該第一方向相夾有一銳角;以及數個絕緣座,其包覆於該些金屬支架外緣。 A carrier module for mounting a plurality of LED chips thereon, the carrier module comprising: a plurality of metal brackets integrally connected in a single piece structure, each metal bracket comprising two conductive frames And a plurality of extending arms integrally extending from the two conductive frames, each of the conductive frames having a predetermined thickness, each of the conductive frames having a front surface, a back surface, and a ring side connected to the front surface and the rear surface of the back surface, and The front surface of each of the conductive frames defines a sealing area and a bearing area substantially surrounded by the sealing area; wherein each of the conductive frames is recessed from the sealing area of the front surface thereof to form at least one dividing groove, and the recess of each dividing groove The depth may be approximately one quarter of the predetermined thickness to three quarters of the predetermined thickness, and the at least one separation groove communicates with the side of the ring and forms two openings on the side of the ring to make each of the conductive frames The partitioning slot can be separated from at least one of the extending arm and the carrying area; wherein the two conductive frames of each metal bracket are respectively defined as a first conductive frame and a second conductive frame, along a first direction Ren An adjacent metal bracket is obliquely integrally connected to the second conductive frame extending arm of the other metal bracket through the first conductive frame extending arm of one of the metal brackets, and the obliquely integrally connected extending arm is substantially opposite to the first direction The clip has an acute angle; and a plurality of insulating seats are coated on the outer edges of the metal brackets. 一種發光二極體結構的金屬支架,包括:兩導電架,其呈間隔設置,每個導電架具有一預定厚度,每一導電架具有一正面、一背面、及相連於該正面與該背面周緣的一環側面,且每一導電架的正面定義有一密封區與一 大致被該密封區所包圍的承載區;以及數個延伸臂,其分別自該兩導電架一體延伸形成;其中,每一導電架自其正面的密封區凹設形成有至少一分隔槽,每個分隔槽的凹陷深度可大致為四分之一的該預定厚度至四分之三的該預定厚度,且該至少一分隔槽連通於該環側面並於該環側面上形成兩開口,以使每一導電架的分隔槽能區隔開該些延伸臂的至少其中之一與該承載區。 A metal bracket with a light-emitting diode structure includes: two conductive frames disposed at intervals, each conductive frame having a predetermined thickness, each conductive frame having a front surface, a back surface, and a front surface and a rear surface of the back surface One side of the ring, and the front side of each of the conductive frames defines a sealing area and a a load-bearing area substantially surrounded by the sealing area; and a plurality of extending arms respectively extending from the two conductive frames; wherein each conductive frame is recessed from the sealing area of the front surface thereof to form at least one dividing groove, each The recessed depth of the partitioning grooves may be approximately one quarter of the predetermined thickness to three quarters of the predetermined thickness, and the at least one dividing groove communicates with the side of the ring and forms two openings on the side of the ring, so that The dividing groove of each of the conductive frames can be spaced apart from at least one of the extending arms and the carrying area. 如請求項7所述之發光二極體結構的金屬支架,其中,每一導電架的分隔槽數量為複數個,且每一分隔槽大致呈三角狀構造,每一分隔槽的兩開口的大小相異,於每一分隔槽中,其較小的開口形成在該三角狀構造的其中一角落,而較大的開口則形成在該角落的對邊。 The metal bracket of the light-emitting diode structure according to claim 7, wherein the number of the separation grooves of each of the conductive frames is plural, and each of the separation grooves has a substantially triangular shape, and the size of the two openings of each of the separation grooves Differently, in each of the separation grooves, a smaller opening is formed in one of the corners of the triangular structure, and a larger opening is formed on the opposite side of the corner. 如請求項8所述之發光二極體結構的金屬支架,其中,於每一導電架中,該環側面對應於每一分隔槽的較小開口之部位形成一由該正面貫通至該背面的缺槽。 The metal bracket of the light-emitting diode structure of claim 8, wherein in each of the conductive frames, a portion of the ring side corresponding to a smaller opening of each of the partition grooves forms a front surface penetrating from the front surface to the back surface Missing slot. 如請求項7所述之發光二極體結構的金屬支架,其中,每一導電架的分隔槽數量為單個且大致呈U字狀構造,於每一導電架中,該分隔槽的兩開口的大小大致相同且分別形成於該U字狀構造的兩末端,該分隔槽區隔開該承載區與該些延伸臂。 The metal bracket of the light-emitting diode structure of claim 7, wherein the number of the partitioning grooves of each of the conductive racks is a single and substantially U-shaped structure, and in each of the conductive racks, the two openings of the partitioning groove are The sizes are substantially the same and are respectively formed at both ends of the U-shaped structure, and the partitioning groove area separates the carrying area from the extending arms. 如請求項10所述之發光二極體結構的金屬支架,其中,於每一導電架中,該環側面對應於該分隔槽兩開口之部位各形成一由該正面貫通至該背面的缺槽。 The metal bracket of the light-emitting diode structure of claim 10, wherein in each of the conductive frames, the side of the ring corresponding to the two openings of the partitioning groove respectively form a slot extending from the front surface to the back surface . 如請求項7所述之發光二極體結構的金屬支架,其中,該兩導電架的其中一導電架呈凸形且設有一凸出部,而另一導電架呈凹形且於對應該凸出部的部位設有對應於該凸出部的一凹陷部,該凸出部之下表面形成槽狀構造,而該凹陷部之上表面凹設有一凹槽。 The metal bracket of the light-emitting diode structure of claim 7, wherein one of the two conductive frames has a convex shape and is provided with a convex portion, and the other conductive frame is concave and correspondingly convex. The portion of the outlet portion is provided with a recessed portion corresponding to the protruding portion, and the lower surface of the protruding portion is formed in a groove-like configuration, and a concave surface is recessed on the upper surface of the recessed portion.
TW102144367A 2013-07-12 2013-12-04 Led structure, metallic frame of led structure, and carrier module TWI513068B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410332560.7A CN104282823A (en) 2013-07-12 2014-07-11 Light emitting diode packaging structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361845526P 2013-07-12 2013-07-12

Publications (2)

Publication Number Publication Date
TW201503429A TW201503429A (en) 2015-01-16
TWI513068B true TWI513068B (en) 2015-12-11

Family

ID=52257511

Family Applications (2)

Application Number Title Priority Date Filing Date
TW102144367A TWI513068B (en) 2013-07-12 2013-12-04 Led structure, metallic frame of led structure, and carrier module
TW103123972A TWI511337B (en) 2013-07-12 2014-07-11 Led package

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103123972A TWI511337B (en) 2013-07-12 2014-07-11 Led package

Country Status (2)

Country Link
CN (1) CN104282821B (en)
TW (2) TWI513068B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105261694B (en) * 2015-10-27 2018-07-27 东莞智昊光电科技有限公司 LED support and its production method
CN105609616A (en) * 2016-03-21 2016-05-25 福建天电光电有限公司 Manufacturing method of EMC package infrared device and EMC connecting bracket
CN108305926B (en) * 2018-02-08 2020-02-07 开发晶照明(厦门)有限公司 LED support, LED module and manufacturing method of LED support
TWI679740B (en) * 2018-09-28 2019-12-11 大陸商光寶光電(常州)有限公司 Lead frame array for carrying chips and led package structure with multiple chips

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010258200A (en) * 2009-04-24 2010-11-11 Panasonic Corp Semiconductor device and method of manufacturing the same
JP2011205100A (en) * 2010-03-25 2011-10-13 Lg Innotek Co Ltd Light-emitting element package and illumination system equipped with the same
JP2011249800A (en) * 2010-05-24 2011-12-08 Seoul Semiconductor Co Ltd Led package
JP2012028744A (en) * 2010-06-22 2012-02-09 Panasonic Corp Semiconductor device package and manufacturing method thereof, and semiconductor device
JP2012049486A (en) * 2010-07-27 2012-03-08 Kyushu Institute Of Technology Led package and manufacturing method therefor, and led module device configured of the same led package and manufacturing method therefor
JP2012174966A (en) * 2011-02-23 2012-09-10 Toppan Printing Co Ltd Lead frame for semiconductor light-emitting device and manufacturing method therefor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1553641B1 (en) * 2002-08-29 2011-03-02 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
JP2005197329A (en) * 2004-01-05 2005-07-21 Stanley Electric Co Ltd Surface-mounting semiconductor device and its lead-frame structure
DE102008049850A1 (en) * 2008-10-01 2010-04-08 Tesa Se Thermally conductive pressure-sensitive adhesive
CN102130266B (en) * 2010-01-20 2013-08-28 光宝电子(广州)有限公司 Packaging structure and light emitting diode packaging structure
KR101778832B1 (en) * 2010-11-02 2017-09-14 다이니폰 인사츠 가부시키가이샤 Led-element mounting lead frame, resin-attached lead frame, method of manufacturing semiconductor device, and semiconductor-element mounting lead frame
CN102834941B (en) * 2010-12-28 2016-10-12 日亚化学工业株式会社 Light-emitting device and manufacture method thereof
CN102760818A (en) * 2011-04-27 2012-10-31 富士康(昆山)电脑接插件有限公司 Package and conductor frame of LED (light emitting diode)
JP2012234955A (en) * 2011-04-28 2012-11-29 Toshiba Corp Led package and method for manufacturing the same
KR101832306B1 (en) * 2011-05-30 2018-02-26 엘지이노텍 주식회사 Light emitting device pakage
JP2013062338A (en) * 2011-09-13 2013-04-04 Toshiba Corp Light-emitting device
CN202917535U (en) * 2012-10-19 2013-05-01 博罗承创精密工业有限公司 LED bracket with multiple light emitting angles and terminal material belt thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010258200A (en) * 2009-04-24 2010-11-11 Panasonic Corp Semiconductor device and method of manufacturing the same
JP2011205100A (en) * 2010-03-25 2011-10-13 Lg Innotek Co Ltd Light-emitting element package and illumination system equipped with the same
JP2011249800A (en) * 2010-05-24 2011-12-08 Seoul Semiconductor Co Ltd Led package
JP2012028744A (en) * 2010-06-22 2012-02-09 Panasonic Corp Semiconductor device package and manufacturing method thereof, and semiconductor device
JP2012049486A (en) * 2010-07-27 2012-03-08 Kyushu Institute Of Technology Led package and manufacturing method therefor, and led module device configured of the same led package and manufacturing method therefor
JP2012174966A (en) * 2011-02-23 2012-09-10 Toppan Printing Co Ltd Lead frame for semiconductor light-emitting device and manufacturing method therefor

Also Published As

Publication number Publication date
TW201503429A (en) 2015-01-16
TWI511337B (en) 2015-12-01
TW201503423A (en) 2015-01-16
CN104282821B (en) 2017-03-29
CN104282821A (en) 2015-01-14

Similar Documents

Publication Publication Date Title
US8866279B2 (en) Semiconductor device
TWI476962B (en) Light emitting device
US8829561B2 (en) Metallic frame structure and LED device having the same
US8729681B2 (en) Package structure and LED package structure
TWI513068B (en) Led structure, metallic frame of led structure, and carrier module
US20150171282A1 (en) Resin package and light emitting device
TWI505519B (en) Light-emitting diode light bar and the method for manufacturing the same
US8772793B2 (en) Light emitting diodes and method for manufacturing the same
US9515241B2 (en) LED structure, metallic frame of LED structure, and carrier module
TWM484188U (en) Light-emitting device
KR101467959B1 (en) Led metal substrate
JP2005175048A (en) Semiconductor light emitting device
US9842968B2 (en) LED package
KR101401919B1 (en) Lighting device of multi level type for integrated high-efficiency
KR20150037216A (en) Light emitting device
TW201442298A (en) LED package and method for manufacturing the same
TWI521741B (en) Led package structure
KR101337599B1 (en) Light emitting diode
KR101147615B1 (en) Light Emitting Diode Chip Package
KR101689397B1 (en) Light emitting device
KR101433734B1 (en) LED Package
KR101262916B1 (en) method for light emitting device with can package and the light emitting device
KR101689396B1 (en) Light emitting device
KR20130023004A (en) Lead flame for led package of high light efficiency
KR20150035209A (en) Light emitting device and method of fabricating the same