TWI512884B - 改良的邊緣環的周緣 - Google Patents
改良的邊緣環的周緣 Download PDFInfo
- Publication number
- TWI512884B TWI512884B TW102129858A TW102129858A TWI512884B TW I512884 B TWI512884 B TW I512884B TW 102129858 A TW102129858 A TW 102129858A TW 102129858 A TW102129858 A TW 102129858A TW I512884 B TWI512884 B TW I512884B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- edge
- ring
- periphery
- support
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 264
- 238000012545 processing Methods 0.000 claims description 48
- 230000002093 peripheral effect Effects 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 19
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 6
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 6
- 229910052902 vermiculite Inorganic materials 0.000 claims description 5
- 235000019354 vermiculite Nutrition 0.000 claims description 5
- 239000010455 vermiculite Substances 0.000 claims description 5
- -1 Al 2 O 2 Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 description 40
- 230000005855 radiation Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 10
- 238000009529 body temperature measurement Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 238000005452 bending Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/630,291 US8865602B2 (en) | 2012-09-28 | 2012-09-28 | Edge ring lip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201413866A TW201413866A (zh) | 2014-04-01 |
| TWI512884B true TWI512884B (zh) | 2015-12-11 |
Family
ID=50385609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102129858A TWI512884B (zh) | 2012-09-28 | 2013-08-20 | 改良的邊緣環的周緣 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8865602B2 (OSRAM) |
| JP (1) | JP6258334B2 (OSRAM) |
| KR (1) | KR102167554B1 (OSRAM) |
| CN (1) | CN104641463B (OSRAM) |
| TW (1) | TWI512884B (OSRAM) |
| WO (1) | WO2014051874A1 (OSRAM) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8744250B2 (en) * | 2011-02-23 | 2014-06-03 | Applied Materials, Inc. | Edge ring for a thermal processing chamber |
| JP2016501445A (ja) * | 2012-11-21 | 2016-01-18 | イー・ヴィー グループ インコーポレイテッドＥＶ Ｇｒｏｕｐ Ｉｎｃ． | ウェハの収容および載置用の収容具 |
| US9768052B2 (en) * | 2013-03-14 | 2017-09-19 | Applied Materials, Inc. | Minimal contact edge ring for rapid thermal processing |
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
| TWI776859B (zh) * | 2017-03-06 | 2022-09-11 | 美商應用材料股份有限公司 | 旋轉器蓋 |
| KR102538177B1 (ko) | 2017-11-16 | 2023-05-31 | 삼성전자주식회사 | 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치 |
| KR102404061B1 (ko) | 2017-11-16 | 2022-05-31 | 삼성전자주식회사 | 상부 샤워 헤드 및 하부 샤워 헤드를 포함하는 증착 장치 |
| KR102401722B1 (ko) | 2017-11-21 | 2022-05-24 | 램 리써치 코포레이션 | 하단 링 및 중간 에지 링 |
| KR102723235B1 (ko) * | 2018-03-13 | 2024-10-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 분무 코팅을 갖는 지지 링 |
| CN119008508A (zh) * | 2018-03-20 | 2024-11-22 | 玛特森技术公司 | 热处理系统中用于局部加热的支撑板 |
| CN111052344B (zh) | 2018-08-13 | 2024-04-02 | 朗姆研究公司 | 边缘环组件 |
| KR102295249B1 (ko) * | 2019-10-08 | 2021-08-30 | (주)에스티아이 | 기판처리장치 |
| US11764101B2 (en) * | 2019-10-24 | 2023-09-19 | ASM IP Holding, B.V. | Susceptor for semiconductor substrate processing |
| CN115087758A (zh) | 2020-02-11 | 2022-09-20 | 朗姆研究公司 | 用于控制晶片晶边/边缘上的沉积的承载环设计 |
| US12444579B2 (en) | 2020-03-23 | 2025-10-14 | Lam Research Corporation | Mid-ring erosion compensation in substrate processing systems |
| JP7461214B2 (ja) * | 2020-05-19 | 2024-04-03 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置 |
| KR20230152801A (ko) * | 2020-06-25 | 2023-11-03 | 램 리써치 코포레이션 | 방사상으로 가변된 플라즈마 임피던스를 갖는 캐리어 링들 |
| US12046503B2 (en) * | 2021-10-26 | 2024-07-23 | Applied Materials, Inc. | Chuck for processing semiconductor workpieces at high temperatures |
| US20240128077A1 (en) * | 2022-10-14 | 2024-04-18 | Nanya Technology Corporation | Semiconductor device and a method for film deposition |
| US20250142678A1 (en) * | 2023-08-01 | 2025-05-01 | Animal Lamps, LLC | Heat lamp |
| CN117604478A (zh) * | 2023-11-13 | 2024-02-27 | 中国科学院上海光学精密机械研究所 | 一种大口径光学薄膜元件镀膜夹具 |
| WO2025247094A1 (zh) * | 2024-05-31 | 2025-12-04 | 北京北方华创微电子装备有限公司 | 一种基片台系统及mpcvd设备 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5474612A (en) * | 1990-03-19 | 1995-12-12 | Kabushiki Kaisha Toshiba | Vapor-phase deposition apparatus and vapor-phase deposition method |
| US5779797A (en) * | 1995-11-15 | 1998-07-14 | Nec Corporation | Wafer boat for vertical diffusion and vapor growth furnace |
| US20050191044A1 (en) * | 2004-02-27 | 2005-09-01 | Applied Materials, Inc. | Backside rapid thermal processing of patterned wafers |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5169684A (en) * | 1989-03-20 | 1992-12-08 | Toyoko Kagaku Co., Ltd. | Wafer supporting jig and a decompressed gas phase growth method using such a jig |
| US5169453A (en) | 1989-03-20 | 1992-12-08 | Toyoko Kagaku Co., Ltd. | Wafer supporting jig and a decompressed gas phase growth method using such a jig |
| JPH05238882A (ja) | 1992-02-28 | 1993-09-17 | Toshiba Mach Co Ltd | 気相成長用サセプタ |
| JPH076959A (ja) * | 1993-06-15 | 1995-01-10 | Hiroshima Nippon Denki Kk | ウェーハ支持具 |
| JPH08191097A (ja) * | 1995-01-11 | 1996-07-23 | Touyoko Kagaku Kk | 高速熱処理装置 |
| JP3545123B2 (ja) | 1996-01-26 | 2004-07-21 | アプライド マテリアルズ インコーポレイテッド | ウエハ加熱器用成膜防護具 |
| JP3505934B2 (ja) * | 1996-09-10 | 2004-03-15 | 東京エレクトロン株式会社 | 被処理体の支持構造及び熱処理装置 |
| US5879128A (en) | 1996-07-24 | 1999-03-09 | Applied Materials, Inc. | Lift pin and support pin apparatus for a processing chamber |
| US5960555A (en) | 1996-07-24 | 1999-10-05 | Applied Materials, Inc. | Method and apparatus for purging the back side of a substrate during chemical vapor processing |
| US6395363B1 (en) | 1996-11-05 | 2002-05-28 | Applied Materials, Inc. | Sloped substrate support |
| US6280183B1 (en) * | 1998-04-01 | 2001-08-28 | Applied Materials, Inc. | Substrate support for a thermal processing chamber |
| US6494955B1 (en) | 2000-02-15 | 2002-12-17 | Applied Materials, Inc. | Ceramic substrate support |
| US6528767B2 (en) * | 2001-05-22 | 2003-03-04 | Applied Materials, Inc. | Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications |
| JP2003059852A (ja) | 2001-08-10 | 2003-02-28 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
| US6868302B2 (en) * | 2002-03-25 | 2005-03-15 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus |
| US7256375B2 (en) | 2002-08-30 | 2007-08-14 | Asm International N.V. | Susceptor plate for high temperature heat treatment |
| US7778533B2 (en) * | 2002-09-12 | 2010-08-17 | Applied Materials, Inc. | Semiconductor thermal process control |
| US7704327B2 (en) | 2002-09-30 | 2010-04-27 | Applied Materials, Inc. | High temperature anneal with improved substrate support |
| JP3094454U (ja) * | 2002-12-03 | 2003-06-20 | 株式会社つかもと | 釜めし容器 |
| KR100387726B1 (ko) * | 2003-02-14 | 2003-06-18 | 코닉 시스템 주식회사 | 급속열처리 장치용 에지링 |
| JP3781014B2 (ja) * | 2003-03-31 | 2006-05-31 | 株式会社Ｓｕｍｃｏ | シリコンウェーハ熱処理治具およびシリコンウェーハ熱処理方法 |
| JP4412967B2 (ja) * | 2003-10-21 | 2010-02-10 | 積水屋根システム株式会社 | 屋根材 |
| US7127367B2 (en) | 2003-10-27 | 2006-10-24 | Applied Materials, Inc. | Tailored temperature uniformity |
| US6888104B1 (en) | 2004-02-05 | 2005-05-03 | Applied Materials, Inc. | Thermally matched support ring for substrate processing chamber |
| KR101112029B1 (ko) | 2004-02-13 | 2012-03-21 | 에이에스엠 아메리카, 인코포레이티드 | 자동 도핑 및 후면 증착의 감소를 위한 기판 지지 시스템 |
| US7972441B2 (en) | 2005-04-05 | 2011-07-05 | Applied Materials, Inc. | Thermal oxidation of silicon using ozone |
| US20070215049A1 (en) * | 2006-03-14 | 2007-09-20 | Applied Materials, Inc. | Transfer of wafers with edge grip |
| US7978964B2 (en) * | 2006-04-27 | 2011-07-12 | Applied Materials, Inc. | Substrate processing chamber with dielectric barrier discharge lamp assembly |
| US8222574B2 (en) * | 2007-01-15 | 2012-07-17 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
| JP5041149B2 (ja) * | 2007-10-10 | 2012-10-03 | ウシオ電機株式会社 | フィラメントランプおよび光照射式加熱処理装置 |
| US8283607B2 (en) | 2008-04-09 | 2012-10-09 | Applied Materials, Inc. | Apparatus including heating source reflective filter for pyrometry |
| TWI476836B (zh) | 2008-05-02 | 2015-03-11 | Applied Materials Inc | 用於旋轉基板之非徑向溫度控制系統 |
| TW201118977A (en) | 2009-03-26 | 2011-06-01 | Panasonic Corp | Plasma processing apparatus and plasma processing method |
| WO2011082020A2 (en) | 2009-12-31 | 2011-07-07 | Applied Materials, Inc. | Shadow ring for modifying wafer edge and bevel deposition |
| JP2014532998A (ja) * | 2011-11-04 | 2014-12-08 | パーカー・ハニフィン・コーポレーション | ランダムアクセスメモリ（ｒａｍ）モジュールを冷却するための装置及び方法 |
-
2012
- 2012-09-28 US US13/630,291 patent/US8865602B2/en active Active
-
2013
- 2013-08-15 KR KR1020157011173A patent/KR102167554B1/ko active Active
- 2013-08-15 JP JP2015534491A patent/JP6258334B2/ja active Active
- 2013-08-15 WO PCT/US2013/055167 patent/WO2014051874A1/en not_active Ceased
- 2013-08-15 CN CN201380047547.0A patent/CN104641463B/zh active Active
- 2013-08-20 TW TW102129858A patent/TWI512884B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5474612A (en) * | 1990-03-19 | 1995-12-12 | Kabushiki Kaisha Toshiba | Vapor-phase deposition apparatus and vapor-phase deposition method |
| US5779797A (en) * | 1995-11-15 | 1998-07-14 | Nec Corporation | Wafer boat for vertical diffusion and vapor growth furnace |
| US20050191044A1 (en) * | 2004-02-27 | 2005-09-01 | Applied Materials, Inc. | Backside rapid thermal processing of patterned wafers |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201413866A (zh) | 2014-04-01 |
| KR102167554B1 (ko) | 2020-10-19 |
| JP2015536048A (ja) | 2015-12-17 |
| JP6258334B2 (ja) | 2018-01-10 |
| CN104641463B (zh) | 2018-05-08 |
| WO2014051874A1 (en) | 2014-04-03 |
| KR20150058520A (ko) | 2015-05-28 |
| CN104641463A (zh) | 2015-05-20 |
| US8865602B2 (en) | 2014-10-21 |
| US20140094039A1 (en) | 2014-04-03 |
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