TWI497634B - Substrate carrier - Google Patents

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Publication number
TWI497634B
TWI497634B TW099136491A TW99136491A TWI497634B TW I497634 B TWI497634 B TW I497634B TW 099136491 A TW099136491 A TW 099136491A TW 99136491 A TW99136491 A TW 99136491A TW I497634 B TWI497634 B TW I497634B
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Taiwan
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substrate
carrier
substrate carrier
conveyor belt
partitions
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TW099136491A
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TW201125064A (en
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Torsten Kornmeyer
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Kgt Graphit Technologie Gmbh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Description

基板載體
本發明係一種基板載體，其作用是平面承載加工中之片狀基板或晶圓，並在加工設備內運送基板或晶圓，或是將基板或晶圓運離加工設備。
半導體工業或太陽能光電工業是應用基板載體(也稱為載板、載體、或電漿載體)在加工設備內運送以玻璃、矽、或其他材料製成的基板或晶圓，或是將基板或晶圓運離加工設備。如果基板或晶圓特別敏感、非常薄、或是面積特別大，就更需要使用這種基板載體或載板來進行運送，也就是說，由於這種基板或晶圓在運送過程中有受損的風險，因此以不使用輔助工具的方式直接運送這種基板或晶圓是不可能的。基板載體是以大面積的方式支撐基板，或是在分佈於其表面上的許多個點支撐基板。
基板載體或載板通常是由具有容納、固定、或承載基板或晶圓之附加介質的板子構成。
例如WO 02/20871 A1提出一種晶圓載體/載板，其是由一具有多個毗鄰排列之空隙的板子構成，其中每一個空隙均可容納一個平放的基板，這些空隙的尺寸僅略大於基板的尺寸。空隙內有3個支承針，基板就是放置在這3個支承針上。透過這種3點支承，一方面可以達到電漿加工(例如PEVCD加工)所需的最大可能的電接觸可靠性，另一方面可以避免熱沉。由於需具備良好的耐熱性及必要的導電性，因此板子本身是由石墨構成。
根據該專利，將正方形基板固定在平面上的方法是使基板至少部分進入空隙內，以便將基板水平固定，而不會從側面滑出。這些空被隙銑削到一實心板內，並且很容易就可以將基板或晶圓放到空隙內，以達到自動嵌入的目的。
但由於需經過複雜的機械加工，因此製造這種實心電漿載體的過程十分麻煩。另外一個缺點是這種電漿載體的熱容很高，因此可能在後續的加工設備中造成熱拖延，或是必須先將電漿載體冷卻，但這樣做不可避免的會使加工時間變長。
WO 02/056338 A2也提出一種類似的結構。該專利也是使用具有適於承載平放之基板的凹陷構造的基板載體運送基板，而且這種基板載體也具有相當大的質量範圍。在運送時，基板載體及置於其上的基板是放置在滾輪上通過加工設備的一個內設HF/VHF電極的外殼通道。
當然，也可以用其他材料製造基板載體，例如CFC/CFK(碳纖維強化塑膠)、CF/陶瓷基材，也就是所謂的高溫基材、或是金屬。
使用整片原料板子會使材料使用量變得很大，以及使加工過程變複雜，而且會產生很多的廢棄物。此外，堅固的基板載體的應用範圍的彈性很小，也就是說，在大多數的情況下，這種基板載體僅能用於特定的加工過程。這表示必須儲備大量的基板載體。
因此業界需要的是應用範圍應盡可能廣泛及/或易於應用在具體的加工任務的基板載體。
本發明的目的是提出一種很節省材料、穩固且又重量很輕的基板載體，而且這種基板載體還要能夠避免先前技術之基板載體的缺點。
為達到上述目的，本發明之基板載體在一個由縱梁及橫梁構成之框架內設有許多交叉排列成格柵狀的縱隔板及橫隔板，且這些縱隔板及橫隔板至少在交叉點是以形狀配合的方式彼此連接，因而構成一直接或間接承載基板的平面基底格柵。
這種構造的基板載體的特徵是所需的材料特別少，而且可以完全的個別配合任意的組合條件及應用條件。由於透過特殊的適配器很容易就可以形成所需的配合，因此利用本發明的基板載體可以運送任何種類的基板通過加工設備。
根據本發明的第一種實施方式，縱梁及橫梁以及縱隔板及橫隔板都是以形狀配合的方式彼此連接。這樣一方面可以達到很高的形狀穩定性，另一方面又能夠確保基板載體可以很容易的被組合及/或拆開。
透過穿孔連接/栓塞連接及/或梳狀連接，很容易就可以實現縱梁及橫梁以及縱隔板及橫隔板彼此之間的形狀配合的連接，其中栓塞具有非圓及/或有角的外輪廓，穿孔則具有形狀重合的內輪廓。
根據本發明的另外一種實施方式，外縱梁是由一上傳送帶及一下傳送帶構成，其中上傳送帶及下傳送帶是以牢固但是可鬆開的方式彼此連接在一起，例如透過螺栓很容易就可以將二者連接在一起。
此外，橫隔板是以形狀配合的方式固定在上傳送帶及下傳送帶之間，以及固定在縱梁上，其中該形狀配合的固定是透過穿孔連接及/或栓塞連接獲得實現。
根據本發明的另外一種實施方式，縱隔板及橫隔板具有支承及固定基板用的單段或多段式承載裝置。可以完全根據基板的尺寸及形狀設計這種承載裝置。
為了使承載裝置易於被固定，可以利用釘子、夾子、或螺栓將承載裝置固定在縱隔板及橫隔板上。
此外，可以透過插上或以螺栓旋緊的陶瓷、石墨、或金屬製成的去耦件將承載裝置固定基板載體上，以使承載裝置從基板載體熱去耦及/或電去耦。
根據本發明的另外一種實施方式，基板載體的零件帶有PyC(熱解碳)或SiC-CVD塗層、或是具有陶瓷-電漿-噴塗層，及/或視應用範圍由CFC、CFK、絕緣石墨(合成石墨)、或其他適當材料製成。塗層的作用是避免產生微粒及電絕緣。
以下配合一個實施例對本發明的內容做進一步的說明。
本發明之基板載體是由一個被縱梁及橫梁(2，3)圍住的框架(1)構成，框架(1)內設有許多交叉排列成格柵狀的縱隔板及橫隔板(4，5)。
外縱梁(2)是由彼此連接的上傳送帶及下傳送帶(6，7)構成。在上傳送帶及下傳送帶(6，7)之間，橫梁(3)的終端及橫隔板(5)的終端都是透過穿孔連接/栓塞連接(8)以形狀配合的方式被固定。為達到必要的穩固性，栓塞具有一至少是非圓及/或有角的外輪廓，穿孔具有一形狀重合的內輪廓。這像只需將上傳送帶及下傳送帶以螺栓旋緊，就可以使基板載體具有必要的穩固性。
此外，縱梁及橫梁(2，3)以及縱隔板及橫隔板(4，5)都是透過穿孔連接/栓塞連接8及/或梳狀連接9以形狀配合的方式彼此連接。這樣一方面可以達到很高的形狀穩定性，另一方面又能夠確保基板載體可以很容易的被組合及/或拆開。
可以在縱隔板及橫隔板(4，5)上設置能夠支承及固定任意基板或晶圓用的單段或多段式承載裝置。可以完全根據基板的尺寸及形狀設計這種承載裝置。例如可以將一個翼梁或類似之構件固定在橫隔板(5)上。
透過釘子、夾子、或螺栓很容易就可以將承載裝置固定在縱隔板及橫隔板(4，5)上。
另外也可以透過插上或以螺栓旋緊的以陶瓷、石墨、或金屬製成的去耦件，將承載裝置固定在基板載體及/或縱梁上。
基板載體的零件可以是由CFC、CFK、或絕緣石墨製成，同時為了避免產生微粒，基板載體的零件可以具有PyC或SiC-CVD塗層、或是具有陶瓷-電漿-噴塗層。
這種基板載體的特徵是所需的材料特別少及結構非常穩固，而且可以完全個別配合任意的應用條件。
本發明的基板載體特別適於在加工設備內承載及運送以玻璃、矽、或其他材料製成的特別薄且大面積的基板或晶圓，或是將此該等基板或晶圓運離加工設備。
1‧‧‧框架
2‧‧‧縱梁
3‧‧‧橫梁
4‧‧‧縱隔板
5‧‧‧橫隔板
6‧‧‧上傳送帶
7‧‧‧下傳送帶
8‧‧‧穿孔連接/栓塞連接
9‧‧‧梳狀連接
第1圖：本發明之基板載體的一個簡圖。
第2圖：第1圖之細部圖X。
2‧‧‧縱梁
3‧‧‧橫梁
4‧‧‧縱隔板
5‧‧‧橫隔板
6‧‧‧上傳送帶
7‧‧‧下傳送帶
8‧‧‧穿孔連接/栓塞連接
9‧‧‧梳狀連接

Claims (6)

  1. 一種基板載體，其作用是承載即將加工的一基板或一晶圓，及在多個加工設備內運送該基板或該晶圓，或是運送該基板或該晶圓經過該多個加工設備，在由一縱梁及一橫梁(2，3)構成之一框架(1)內設有多個縱隔板及橫隔板(4，5)，且該多個縱隔板及橫隔板以格柵的方式彼此連接而互相交叉，因而構成一直接或間接承載基板的平面基底格柵，其特徵為：該縱梁及該橫梁(2，3)以及該縱隔板及該橫隔板(4，5)都是以形狀配合的方式彼此連接，所述形狀配合的連接是透過多個穿孔及栓塞連接(8)及/或多個梳狀連接(9)而實施，其中多個栓塞具有至少是非圓或有角的外輪廓，多個穿孔具有形狀重合的內輪廓，該外部縱梁(2)是由一上傳送帶(6)及一下傳送帶(7)構成，其中該上傳送帶(6)及該下傳送帶(7)是以牢固但是可鬆開的方式彼此連接在一起，該多個橫隔板(5)是以形狀配合的方式固定在該上傳送帶(6)及該下傳送帶(7)之間的該縱梁(2)上。
  2. 如申請專利範圍第1項的基板載體，其特徵為：該多個穿孔連接及栓塞連接(8)被提供用於該多個橫隔板(5)的形狀擬合的附接。
  3. 如申請專利範圍第1項的基板載體，其特徵為：該多個縱隔板及橫隔板(4，5)具有用於支承及固定基板的單段或多段式的多個承載裝置。
  4. 如申請專利範圍第3項的基板載體，其特徵為：利用一釘子、一夾子、或一螺栓將該多個承載裝置固定在該多個縱 隔板及橫隔板(4，5)上。
  5. 如申請專利範圍第3項的基板載體，其特徵為：該多個承載裝置具有插上或以螺栓旋緊的以陶瓷、石墨、或金屬製成的多個去耦件。
  6. 如申請專利範圍第1項的基板載體，其特徵為：該基板載體的零件帶有PyC或SiC-CVD塗層、或是具有陶瓷-電漿-噴塗層，及/或是由CFC、CFK、或絕緣石墨製成。
TW099136491A 2009-12-11 2010-10-26 Substrate carrier TWI497634B (zh)

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CN (1) CN102686768B (zh)
DE (1) DE102010029341A1 (zh)
MY (1) MY160057A (zh)
SG (1) SG181445A1 (zh)
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WO (1) WO2011069687A1 (zh)

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