TWI496938B - A heat treatment method including a heating step, a processing step and a cooling step - Google Patents

A heat treatment method including a heating step, a processing step and a cooling step Download PDF

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TWI496938B
TWI496938B TW100112762A TW100112762A TWI496938B TW I496938 B TWI496938 B TW I496938B TW 100112762 A TW100112762 A TW 100112762A TW 100112762 A TW100112762 A TW 100112762A TW I496938 B TWI496938 B TW I496938B
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processing chamber
processing
susceptor
chamber
temperature
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Johannes Kaeppeler
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Aixtron Se
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Description

包含加熱步驟、處理步驟及冷卻步驟之熱處理方法
本發明係有關於一種處理方法，特別是在反應器殼體之處理室內對特別是半導體基板之工件進行鍍覆的方法，該處理室構成一個可被加熱裝置加熱且具有用於容置工件的基座的處理室底部、及一個可被冷卻裝置冷卻的處理室頂部，其中，由處理室頂部與該處理室底部之間距所界定的處理室高度為可變的，其中，在加熱步驟中，將基座自裝料/卸料溫度(即，為處理室裝卸工件時的溫度)加熱至處理溫度，在隨後的處理步驟中，在處理溫度下對該等工件進行熱處理，而後在一冷卻步驟中，將基座冷卻至裝料/卸料溫度。
DE 102 17 806 A1揭示一種利用MOCVD方法將半導體層沈積於半導體基板上的裝置。該裝置具有反應器殼體，此反應器殼體內設有進氣機構及基座。進氣機構底面與基座頂面之間為處理室。處理氣體可經由處理室頂部上的開口進入處理室。基座上放有待鍍覆的基板。為實現鍍覆，反應氣體或不同的反應氣體成分主要在待鍍覆的基板表面發生熱解。其反應產物，即III及V主族元素，於基板表面形成一層，而此層為單晶基板之磊晶層。基座由加熱裝置自下方加熱。可垂直地移動基座，以改變處理室高度。
本發明之目的在於縮短沈積製程週期。
本發明用以達成上述目的之解決方案即為本發明之申請專利範圍。
在明顯低於處理溫度且可大於等於100℃的裝料/卸料溫度下打開反應器殼體蓋後，為處理室裝載基板。隨後，關閉反應器殼體，並用沖洗氣體沖洗處理室。在加熱步驟中，將基座加熱至高於裝料/卸料溫度數百℃的處理溫度。在處理步驟中，將處理氣體送入處理室，以便實施熱處理。處理步驟結束後，實施冷卻步驟，將處理室及基座冷卻至裝料/卸料溫度。達到此溫度後，可打開反應器殼體，以便取出經處理的基板，並代之以待處理的基板。本發明係藉由在加熱階段使基座與已冷卻的處理室頂部之間達到最大距離，來縮短處理週期。藉此，將自被加熱的基座至已冷卻的處理室頂部之傳熱程度降至最低。尤佳地，在加熱過程中，經由一個構成處理室頂部的進氣機構，送入一種導熱性能較差的沖洗氣體(例如，氮氣)。實施處理步驟時，將處理室高度調節至適於處理的最佳值。此項處理可針對工件(尤其是基板)之純熱處理。較佳地，在實施該處理步驟時，將由一或多種成分構成的處理氣體，經由進氣機構之進氣口送入處理室，而該處理氣體在基板表面發生化學反應，並形成一半導體層。為此，該處理氣體較佳含有III主族金屬之有機金屬成分、及V主族元素之氫化物。處理室高度在冷卻處理過程中取最小值。在此過程中，尤佳用一種導熱性能良好的沖洗氣體(例如，氫氣)沖洗處理室高度。此措施使得自待冷卻的基座至已冷卻的處理室頂部之傳熱達到最大程度。根據一種尤佳實施方案，在處理室內部，於低壓條件下實施MOCVD處理。較佳用紅外線加熱裝置或射頻加熱裝置，自下方加熱石墨製的基座。較佳用一個執行機構垂直地移動基座及基座之加熱裝置，以此來改變處理室高度。該執行機構可位於反應器殼體內部，而較佳由一個主軸傳動裝置所構成。基座可圍繞著佈置於反應器殼體中心的軸線而旋轉。處理室頂部較佳由進氣機構之出氣面所構成，且具有多個可供冷卻劑穿過的冷卻通道。
特定言之，本發明係有關於一種在反應器殼體之處理室中將至少一層沈積於至少一個基板上的方法，該處理室包括一個用於容置至少一個基板的基座、及一個可被冷卻裝置冷卻的處理室頂部，該基座係構成處理室之底部，且可被加熱裝置所加熱，其中，處理室頂部與處理室底部之間距界定出處理室高度，而該處理室高度可在一最小值與一不同於該最小值的最大值之間變化，此方法包含以下步驟：
-將基座調節至裝料/卸料溫度；
-在裝料/卸料溫度下，為基座裝載至少一個基板；
-將基座自裝料/卸料溫度加熱至高於裝料/卸料溫度的處理溫度，在此期間，處理室高度取其最大值；
-在處理溫度下，將處理氣體送入處理室並使其發生分解，以便將至少一層沈積於至少一個基板上，在此期間，處理室高度處於其最大值與最小值之間；
-將基座自處理溫度冷卻至裝料/卸料溫度，在此期間，處理室高度取其最小值，且處理室頂部得到冷卻；
-在裝料/卸料溫度下，為處理室卸料。
下文將藉由圖1所示之反應器殼體剖面圖對本發明之實施例進行說明。
反應器殼體係由反應器殼體蓋1、反應器殼體底3、及反應器殼體壁2所構成。反應器殼體壁2可呈管狀。可用一個未圖示的真空裝置將殼體內部抽空，抑或使其處理室壓力保持低於大氣壓力之水平。
進氣機構7固定於殼體蓋1上，由進氣管21為該進氣機構提供沖洗氣體或處理氣體。進氣機構7由一個優質鋼所製的中空體所構成，在此中空體內，進氣管21之出口前面設有擋板20。進氣機構7之底面構成出氣板，而該出氣板具有多個呈篩狀佈置的出氣口8。出氣板朝之向下方的外表面構成處理室頂部10。出氣口8之間設有可供液態冷卻劑(例如，水)穿過的冷卻通道23，以便對處理室頂部10進行冷卻。
進氣機構7下方設有一基座5，其頂面與進氣機構7之出氣板平行，且構成處理室底部9。進氣機構7與基座5之間為處理室4。圓盤形的基座5之直徑可大於30 cm。
基座5由位於處理室4之中心軸6上的支柱22所支承。支柱22可受到旋轉驅動，以便基座5在鍍覆處理過程中圍繞軸線6而旋轉。
基座5下方設有托板17，該托板可由石英構成，且載有一個具有多個出氣口18的出氣環16，而該出氣環則與未圖示的真空裝置相連接。
基座5及托板17下方設有加熱盤管15，而該加熱盤管可產生射頻場(RF-field)，以在石墨製的基座5中感應誘發渦電流，藉此，將基座5加熱至處理溫度。
設有多個執行機構11，其皆具有：主軸傳動裝置13、可由主軸傳動裝置13旋轉驅動的主軸12、及佈置於托板17上的主軸螺母14。藉由執行機構11，可改變基座5、托板17、及加熱裝置15之垂直位置。
因此，藉由執行機構11，可使處理室高度H在一最小值與一最大值之間變化。高度H可在4 mm與50 mm之間變化。通常情況下，基座之直徑至少為30 cm，最大為650 cm。
利用上述裝置可實施以下處理方法：
在介於室溫與200℃至300℃之間的裝料/卸料溫度下，打開反應器殼體，例如，掀起反應器殼體蓋1。由於進氣機構7係固定在反應器殼體蓋1上，所以，反應器殼體蓋1被打開後，便可暢通無阻地為基座5裝載基板19。將待鍍覆的基板19放置到基板5上後，重新關閉處理室殼體。用沖洗氣體(例如，氮氣)沖洗處理室4。用執行機構11將基座5連同加熱裝置15調節至最低位置，此時，處理室高度H取其最大值(例如，不小於7 cm)。在此位置上(此時，自基座至已冷卻的處理室頂部10之傳熱程度降至最低)，將基座5加熱至高於600℃甚至高於1000℃之處理溫度。
將處理氣體經由進氣管21送入進氣機構7，並經由出氣口8進一步送入處理室4，由此啟動用以沈積半導體層於基板19上的生長製程。
生長步驟結束後，用沖洗氣體(此時可為氫氣)沖洗處理室4。用執行機構11將基座5垂直地向上調節至最高位置，此時，處理室高度H取其最小值。該最小值例如不大於2 cm。斷開加熱裝置15並用冷卻劑冷卻處理室頂部10之後，基座5溫度下降，而由於沖洗氣體導熱性能良好且基座與處理室頂部之間達到最小距離，故而，此時自基座5至已冷卻的處理室頂部10之傳熱達到最大程度。
達到裝料/卸料溫度後，將氮氣送入處理室並打開反應器殼體蓋1，以便更換基板。
所有已揭示特徵(自身即)為發明本質所在。故本申請案之揭示內容亦包含相關/所附優先權檔案(先申請案副本)所揭示之全部內容，該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項採用可選並列措辭對本發明針對先前技術之改良方案的特徵予以說明，其目的主要在於可在該等請求項基礎上進行分案申請。
1．．．(反應器)殼體蓋；反應器殼體
2．．．(反應器)殼體壁；反應器殼體
3．．．(反應器)殼體底；反應器殼體
4．．．處理室
5．．．基座
6．．．軸線；中心軸
7．．．進氣機構
8．．．出氣口
9．．．處理室底部
10．．．處理室頂部
11．．．執行機構
12．．．主軸
13．．．主軸傳動裝置
14．．．主軸螺母
15．．．加熱裝置；加熱盤管
16．．．出氣環
17．．．托板
18．．．出氣口
19．．．(半導體)基板
20．．．擋板
21．．．進氣管
22．．．支柱
23．．．冷卻通道；冷卻裝置
H．．．(處理室)高度
圖1為反應器殼體之剖面圖。
1．．．(反應器)殼體蓋；反應器殼體
2．．．(反應器)殼體壁；反應器殼體
3．．．(反應器)殼體底；反應器殼體
4．．．處理室
5．．．基座
6．．．軸線；中心軸
7．．．進氣機構
8．．．出氣口
9．．．處理室底部
10．．．處理室頂部
11．．．執行機構
12．．．主軸
13．．．主軸傳動裝置
14．．．主軸螺母
15．．．加熱裝置；加熱盤管
16．．．出氣環
17．．．托板
18．．．出氣口
19．．．(半導體)基板
20．．．擋板
21．．．進氣管
22．．．支柱
23．．．冷卻通道；冷卻裝置
H．．．(處理室)高度

Claims (12)

  1. 一種特別是在反應器殼體(1，2，3)之處理室(4)內對多個特別是半導體基板(19)之工件進行鍍覆的處理方法，該處理室構成一個可被加熱裝置(15)加熱且具有用於容置該等工件的基座(5)的處理室底部(9)、及一個可被冷卻裝置(23)冷卻的處理室頂部(10)，其中，由處理室頂部(10)與處理室底部(9)之間距所界定的處理室高度(H)為可變的，其中，在加熱步驟中，將基座(5)自處理室裝卸該等工件時的裝料/卸料溫度加熱至處理溫度，在隨後的處理步驟中，在處理溫度下對該等工件進行熱處理，而後在冷卻步驟中，將基座冷卻至裝料/卸料溫度，其特徵在於：處理室高度(H)在加熱步驟中取一最大值，以便將自被加熱的基座(5)至已冷卻的處理室頂部(10)之傳熱最大化，而在冷卻步驟中取一最小值，以便將自被冷卻的基座(5)至已冷卻的處理室頂部之傳熱最大化，其中，流向處理室頂部(10)的熱量係由冷卻裝置(23)所導散。
  2. 如申請專利範圍第1項之處理方法，其中，在該處理步驟中，藉由構成該處理室頂部(10)的進氣機構(7)，將處理氣體送入該處理室(4)，而處理氣體係在放置於該基座(5)上的至少一個基板(19)上，透過化學反應或凝結作用形成為一層。
  3. 如申請專利範圍第1項之處理方法，其中，在該加熱步驟中，將諸如氮氣之類的導熱性能較差的沖洗氣體經由進氣機構(7)送入處理室(4)。
  4. 如申請專利範圍第1項之處理方法，其中，在該冷卻步驟中，將諸如氫氣之類的導熱性能良好的處理氣體經由進氣機構(7)送入處理室(4)。
  5. 如申請專利範圍第1項之處理方法，其中，該處理步驟為MOCVD沈積製程。
  6. 如申請專利範圍第1項之處理方法，其中，在低於1000 mbar的處理室壓力下實施該處理步驟。
  7. 如申請專利範圍第1項之處理方法，其中，利用射頻加熱裝置(15)或紅外線加熱裝置為石墨製的基座(5)調溫。
  8. 如申請專利範圍第1項之處理方法，其中，用流經諸冷卻通道(23)的液態冷卻劑冷卻該處理室頂部。
  9. 如申請專利範圍第1項之處理方法，其中，藉由執行機構(11)，使該基座(5)連同該加熱裝置(15)垂直地發生相對於該反應器殼體(1，2，3)的位移，以達到改變該處理室高度(H)之目的。
  10. 如申請專利範圍第1項之處理方法，其中，圓盤形的基座(5)之直徑至少為30 cm，與該處理室頂部之最小間距不超過2 cm，最大間距不低於7 cm。
  11. 一種在一反應器殼體(1，2，3)之處理室(4)中將至少一層沈積於至少一個基板(19)上的方法，該處理室包括一個用於容置至少一個基板(19)的基座(5)、及一個可被冷卻裝置(23)冷卻的處理室頂部(10)，該基座係構成處理室(4)之底部(9)，且可被加熱裝置(15)所加熱，其中，處理室頂部(10)與處理室底部(9)之間距界定出處理室高度(H)，而該處理室高度可在一最小值與一不同於該最小值的最大值之間變化，此方法包含以下步驟：將基座(5)調節至裝料/卸料溫度；在裝料/卸料溫度下，為基座(5)裝載至少一個基板(19)；將基座(5)自裝料/卸料溫度加熱至高於裝料/卸料溫度的處理溫度，在此期間，處理室高度(H)取其最大值；在處理溫度下，將處理氣體送入處理室(4)並使其發生分解，以便將至少一層沈積於至少一個基板(19)上，在此期間，處理室高度(H)處於其最大值與最小值之間；將基座(5)自處理溫度冷卻至裝料/卸料溫度，在此期間，處理室高度(H)取其最小值，且處理室頂部(10)得到冷卻；在裝料/卸料溫度下，為處理室(4)卸料。
  12. 如申請專利範圍第11項之方法，其中，在加熱基座及處理諸工件的過程中，冷卻該處理室頂部(10)。
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