Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
  • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
  • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
  • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45587—Mechanical means for changing the gas flow
  • C23C16/45589—Movable means, e.g. fans
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
  • C23C16/463—Cooling of the substrate
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67109—Apparatus for thermal treatment mainly by convection
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Definitions

• a thermal treatment method comprising a heating step, a treatment step and a cooling step
• the invention relates to a method for treating, in particular coating of workpieces, in particular semiconductor substrates in a process chamber of a reactor housing, which form a heated by a heater, a susceptor for receiving the workpieces having process chamber bottom and a cooling device cooled by a cooling process chamber ceiling, wherein by the distance in a heating step, the susceptor is heated from a loading / unloading temperature at which the process chamber is loaded or unloaded with the workpieces to a process temperature, in a heating step subsequent to the process step Treatment step at the process temperature, the workpieces are thermally treated and then cooled in a cooling step, the susceptor to the loading / unloading temperature.
• DE 102 17 806 A1 discloses a device with which semiconductor layers can be deposited on semiconductor substrates in an MOCVD process.
• the device has a reactor housing in which a gas inlet member and a susceptor are located. Between the underside of the gas inlet member and the top of the susceptor is a process chamber. Through openings in the process chamber ceiling, a process gas can flow into the process chamber. On the susceptor are substrates that are coated. For this purpose, the process gas or various process gas components decomposes pyrolytically, in particular on the surface of the substrate to be coated.
• the reaction products which are elements of the III and V main groups, form on the substrate surface a layer which is in epitaxial relation to the monocrystalline substrate.
• the Susceptor is heated from below with a heater. The susceptor can be displaced in the vertical direction for varying the process chamber height.
• the invention has for its object to shorten the cycle times of a deposition process.
• the process chamber is loaded with substrates open when the reactor housing cover. Subsequently, the reactor housing is closed and flushed the process chamber with a purge gas. In a heating step, the susceptor is brought to the process temperature, which can be several hundred degrees higher than the loading / unloading temperature. During the process step, process gases are introduced into the process chamber, so that the thermal treatment process can take place. After completion of the process step, the process chamber or the susceptor is cooled to the loading / unloading temperature in a cooling step. Once this is achieved, the reactor housing can be opened to remove the treated substrates and replace them to be treated substrates.
• the cycle time is reduced by the fact that the susceptor occupies its maximum distance from the cooled process chamber ceiling during the heating phase. As a result, the heat flow from the heated susceptor to the cooled process chamber ceiling is minimized.
• a purge gas having a low thermal conductivity for example nitrogen
• the process chamber height is set to the optimum value for the respective treatment. This may be a pure thermal treatment of a workpiece, in particular a substrate.
• a process gas consisting of one or more components passes through gas inlet openings of the gas inlet element into the process chamber, where it reacts chemically on the substrate surfaces, so that a semiconductor layer is deposited there.
• the process gas preferably contains an organometallic component of a metal of the III main group and a hydride of an element of the main group.
• the process chamber height assumes its minimum value.
• the process chamber height is particularly preferably flushed with a purge gas which has a high thermal conductivity, for example hydrogen.
• an MOCVD process is performed at low pressure within the process chamber.
• the graphite susceptor is preferably heated from below by means of IR or RF heating.
• the susceptor and a heater which heats the susceptor are preferably displaced in the vertical direction by an actuator.
• the actuator can be located within the reactor housing and preferably consists of a spindle drive.
• the susceptor can be rotated about an axis located in the center of the reactor housing.
• the process chamber ceiling which is preferably formed by a gas outlet surface of a gas inlet member, there are cooling channels through which a coolant flows.
• the invention relates in particular to a method for depositing at least one layer on at least one substrate in a process chamber of a reactor housing, with a, the bottom of the process chamber forming, heatable by a heater susceptor for receiving the at least one substrate and a cooling device cooled by a cooling process chamber ceiling, said the distance between the process chamber ceiling and the process chamber floor defines a process chamber height which is between a minimum value and a different maximum value is variable, with the following
• the reactor housing is formed by a reactor housing cover 1, a reactor housing bottom 3 and a reactor housing wall 2.
• the reactor housing wall 2 may be tubular.
• the housing interior can be evacuated with a vacuum device, not shown, or kept regulated at a below the atmospheric pressure process chamber pressure.
• a gas inlet member 7 is fixed, which is fed by a feed line 21 with a purge gas or with process gases.
• the gas inlet member 7 consists of a hollow body made of stainless steel, in which a baffle plate 20 is located in front of the mouth of the feed line 21.
• the underside of the gas inlet member 7 forms a gas outlet plate, which has a plurality of sieve-like arranged gas outlet openings 8.
• the downwardly facing outside of the gas outlet plate forms a process chamber ceiling 10.
• Between the gas outlet openings 8 are cooling channels 23, through which a liquid coolant, for example. Water, flows to cool the process chamber ceiling 10.
• the diameter of the circular disk-shaped susceptor 5 may be more than 30 cm.
• the susceptor 5 is supported by a column 22 which is located in the central axis 6 of the process chamber 4.
• the column 22 may be rotationally driven to rotate the susceptor 5 about the axis 6 during the coating process.
• a support plate 17 which may, for example, consist of quartz and carries a gas outlet ring 16 with a plurality of gas outlet openings 18, which is connected to the vacuum device, not shown.
• a heating coil 15 which is capable of producing an RF field which induces eddy currents in the susceptor 5 made of graphite, thereby allowing the susceptor 5 to be heated to a process temperature
• actuators 11 are provided which have a spindle drive 13, a spindle 12 rotatably driven by the spindle drive 12 and arranged on the support plate 17 spindle nut 14. With the actuators 11, the vertical position of the susceptor 5, the support plate 17 and the heater 15 can be vari- iert.
• the process chamber height H between a minimum value and a maximum value can be changed.
• the height H can be varied between 4 and 50 mm.
• the diameter of the susceptor is typically at least 30 cm, and typically at most 650 cm.
• the reactor housing is opened, which can be done, for example, by lifting the reactor housing cover 1. Since the gas inlet member 7 is fixedly secured to the reactor housing cover 1, the susceptor 5 is accessible when the reactor housing cover 1 is open in order to load it with substrates 19. After the susceptor 5 is loaded with the substrates 19 to be coated, the process chamber housing is closed again. The process chamber 4 is purged with a purge gas, which may be nitrogen. By means of the actuator 11 of the susceptor 5 is moved in addition to heating 15 in a maximum lowered position in which the process chamber height H their maximum value, eg.
• the susceptor 5 is heated to its process temperature, which may be above 600 ° C and above 1000 ° C.
• a process gas By introducing a process gas through the feed line 21 into the gas inlet member 7 and by exiting the gas outlet openings 8 in the process chamber 4, a growth process is set in motion, in which semiconductor layers are deposited on the substrates 19.
• the process chamber 4 is purged with a purge gas, which may now be hydrogen.
• a purge gas which may now be hydrogen.
• the susceptor 5 is moved in the vertical direction up to a maximum position in which the process chamber height H assumes its minimum value. This can be, for example, a maximum of 2 cm.
• the heater 15 is switched off and the process chamber ceiling 10 is cooled with a coolant, the susceptor 5 cools down, the heat transfer from the susceptor 5 to the cooled process chamber ceiling 10 being maximized as a result of the highly heat-conducting purge gas and the minimum distance.

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• Chemical & Material Sciences (AREA)
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• Mechanical Engineering (AREA)
• General Chemical & Material Sciences (AREA)
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• Microelectronics & Electronic Packaging (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Power Engineering (AREA)
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• 2010
  • 2010-04-16 DE DE102010016477A patent/DE102010016477A1/de active Pending
• 2011
  • 2011-04-08 WO PCT/EP2011/055505 patent/WO2011128260A1/de active Application Filing
  • 2011-04-08 CN CN201180029125.1A patent/CN102947483B/zh active Active
  • 2011-04-08 KR KR1020127029969A patent/KR101832980B1/ko active IP Right Grant
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