TWI496936B - 用於製造高純度多晶矽之方法及裝置 - Google Patents

用於製造高純度多晶矽之方法及裝置 Download PDF

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Publication number
TWI496936B
TWI496936B TW099112454A TW99112454A TWI496936B TW I496936 B TWI496936 B TW I496936B TW 099112454 A TW099112454 A TW 099112454A TW 99112454 A TW99112454 A TW 99112454A TW I496936 B TWI496936 B TW I496936B
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TW
Taiwan
Prior art keywords
certain embodiments
tcs
reaction
temperature
microns
Prior art date
Application number
TW099112454A
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English (en)
Chinese (zh)
Other versions
TW201100586A (en
Inventor
Ben Fieselmann
David Mixon
York Tsuo
Original Assignee
Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd
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Publication date
Application filed by Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd filed Critical Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd
Publication of TW201100586A publication Critical patent/TW201100586A/zh
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Publication of TWI496936B publication Critical patent/TWI496936B/zh

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/14—Production of inert gas mixtures; Use of inert gases in general
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
    • B01J8/24—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles according to "fluidised-bed" technique

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
TW099112454A 2009-04-20 2010-04-20 用於製造高純度多晶矽之方法及裝置 TWI496936B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17098309P 2009-04-20 2009-04-20
US17096209P 2009-04-20 2009-04-20

Publications (2)

Publication Number Publication Date
TW201100586A TW201100586A (en) 2011-01-01
TWI496936B true TWI496936B (zh) 2015-08-21

Family

ID=42981177

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099112454A TWI496936B (zh) 2009-04-20 2010-04-20 用於製造高純度多晶矽之方法及裝置

Country Status (8)

Country Link
US (2) US20100266762A1 (fr)
EP (1) EP2421795A4 (fr)
JP (1) JP2012524022A (fr)
KR (1) KR20120023678A (fr)
AU (1) AU2010239352A1 (fr)
CA (1) CA2759449A1 (fr)
TW (1) TWI496936B (fr)
WO (1) WO2010123875A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201113391A (en) * 2009-03-19 2011-04-16 Ae Polysilicon Corp Silicide-coated metal surfaces and methods of utilizing same
US8425855B2 (en) * 2009-04-20 2013-04-23 Robert Froehlich Reactor with silicide-coated metal surfaces
WO2010123869A1 (fr) * 2009-04-20 2010-10-28 Ae Polysilicon Corporation Procédés et système pour refroidir un effluent gazeux provenant d'une réaction
CN102958835B (zh) 2010-06-29 2014-11-12 尤米科尔公司 具有低氧含量的亚微米级的硅粉末
US9156705B2 (en) * 2010-12-23 2015-10-13 Sunedison, Inc. Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor
CN104540590B (zh) * 2012-08-13 2017-03-08 江苏中能硅业科技发展有限公司 高球形度籽晶和流化床颗粒硅的制备方法
US9212421B2 (en) * 2013-07-10 2015-12-15 Rec Silicon Inc Method and apparatus to reduce contamination of particles in a fluidized bed reactor
US9850137B2 (en) * 2012-12-31 2017-12-26 Corner Star Limited Improving operation of fluidized bed reactors by optimizing temperature gradients via particle size distribution control
JP7068034B2 (ja) 2018-05-18 2022-05-16 株式会社トクヤマ シリコン微粒子及びその製造方法
JP7384829B2 (ja) 2018-12-21 2023-11-21 株式会社トクヤマ シリコン微粒子及びその製造方法
JP2021042112A (ja) * 2019-09-13 2021-03-18 株式会社トクヤマ 精製シリコン微粒子の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906441A (en) * 1987-11-25 1990-03-06 Union Carbide Chemicals And Plastics Company Inc. Fluidized bed with heated liners and a method for its use
US5798137A (en) * 1995-06-07 1998-08-25 Advanced Silicon Materials, Inc. Method for silicon deposition
US6581415B2 (en) * 2001-01-31 2003-06-24 G.T. Equipment Technologies, Inc. Method of producing shaped bodies of semiconductor materials
US6893578B1 (en) * 2001-12-05 2005-05-17 Sandia Corporation Selective etchant for oxide sacrificial material in semiconductor device fabrication

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3012876A (en) * 1960-10-07 1961-12-12 Du Pont Metal production
US4474606A (en) * 1980-04-03 1984-10-02 Occidental Chemical Corporation Composition for corrosion protection using metal silicides or alloys of silicon and metals
US4359490A (en) * 1981-07-13 1982-11-16 Fairchild Camera & Instrument Corp. Method for LPCVD co-deposition of metal and silicon to form metal silicide
FR2530638A1 (fr) * 1982-07-26 1984-01-27 Rhone Poulenc Spec Chim Procede de preparation d'un melange a base de trichlorosilane utilisable pour la preparation de silicium de haute purete
US4818495A (en) * 1982-11-05 1989-04-04 Union Carbide Corporation Reactor for fluidized bed silane decomposition
DE3413064A1 (de) * 1984-04-06 1985-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von metallsilizidschichten durch abscheidung aus der gasphase bei vermindertem druck und deren verwendung
US4714632A (en) * 1985-12-11 1987-12-22 Air Products And Chemicals, Inc. Method of producing silicon diffusion coatings on metal articles
WO1988003519A1 (fr) * 1986-11-03 1988-05-19 Weir Richard L Compositions de precurseurs de ceramique contenant du diborure de titane
US4868013A (en) * 1987-08-21 1989-09-19 Ethyl Corporation Fluidized bed process
US5139762A (en) * 1987-12-14 1992-08-18 Advanced Silicon Materials, Inc. Fluidized bed for production of polycrystalline silicon
US5165908A (en) * 1988-03-31 1992-11-24 Advanced Silicon Materials, Inc. Annular heated fluidized bed reactor
US5326547A (en) * 1988-10-11 1994-07-05 Albemarle Corporation Process for preparing polysilicon with diminished hydrogen content by using a two-step heating process
US5242671A (en) * 1988-10-11 1993-09-07 Ethyl Corporation Process for preparing polysilicon with diminished hydrogen content by using a fluidized bed with a two-step heating process
US5260538A (en) * 1992-04-09 1993-11-09 Ethyl Corporation Device for the magnetic inductive heating of vessels
US5795659A (en) * 1992-09-05 1998-08-18 International Inc. Aluminide-silicide coatings coated products
US5382412A (en) * 1992-10-16 1995-01-17 Korea Research Institute Of Chemical Technology Fluidized bed reactor heated by microwaves
GB2271518B (en) * 1992-10-16 1996-09-25 Korea Res Inst Chem Tech Heating of fluidized bed reactor by microwave
US5405658A (en) * 1992-10-20 1995-04-11 Albemarle Corporation Silicon coating process
DE19735378A1 (de) * 1997-08-14 1999-02-18 Wacker Chemie Gmbh Verfahren zur Herstellung von hochreinem Siliciumgranulat
DE19948395A1 (de) * 1999-10-06 2001-05-03 Wacker Chemie Gmbh Strahlungsbeheizter Fliessbettreaktor
US6368568B1 (en) * 2000-02-18 2002-04-09 Stephen M Lord Method for improving the efficiency of a silicon purification process
US6451277B1 (en) * 2000-06-06 2002-09-17 Stephen M Lord Method of improving the efficiency of a silicon purification process
WO2002022501A1 (fr) * 2000-09-14 2002-03-21 Solarworld Ag Procede de preparation de trichlorosilane
DE10059594A1 (de) * 2000-11-30 2002-06-06 Solarworld Ag Verfahren und Vorrichtung zur Erzeugung globulärer Körner aus Reinst-Silizium mit Durchmessern von 50 mum bis 300 mum und ihre Verwendung
DE10061682A1 (de) * 2000-12-11 2002-07-04 Solarworld Ag Verfahren zur Herstellung von Reinstsilicium
DE10062419A1 (de) * 2000-12-14 2002-08-01 Solarworld Ag Verfahren zur Herstellung von hochreinem, granularem Silizium
DE10063862A1 (de) * 2000-12-21 2002-07-11 Solarworld Ag Verfahren zur Herstellung von hochreinem, granularen Silizium
US6827786B2 (en) * 2000-12-26 2004-12-07 Stephen M Lord Machine for production of granular silicon
JP3873634B2 (ja) * 2001-02-28 2007-01-24 株式会社日立製作所 風力発電システム
US6670278B2 (en) * 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
US7033561B2 (en) * 2001-06-08 2006-04-25 Dow Corning Corporation Process for preparation of polycrystalline silicon
DE10359587A1 (de) * 2003-12-18 2005-07-14 Wacker-Chemie Gmbh Staub- und porenfreies hochreines Polysiliciumgranulat
JP4328303B2 (ja) * 2004-09-16 2009-09-09 株式会社サンリック 太陽光発電用多結晶シリコン原料および太陽光発電用シリコンウェーハ
US7790129B2 (en) * 2005-07-29 2010-09-07 Lord Ltd., Lp Set of processes for removing impurities from a silcon production facility
US7935327B2 (en) * 2006-08-30 2011-05-03 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor integrated into a siemens-type process
DE102007021003A1 (de) * 2007-05-04 2008-11-06 Wacker Chemie Ag Verfahren zur kontinuierlichen Herstellung von polykristallinem hochreinen Siliciumgranulat

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906441A (en) * 1987-11-25 1990-03-06 Union Carbide Chemicals And Plastics Company Inc. Fluidized bed with heated liners and a method for its use
US5798137A (en) * 1995-06-07 1998-08-25 Advanced Silicon Materials, Inc. Method for silicon deposition
US6581415B2 (en) * 2001-01-31 2003-06-24 G.T. Equipment Technologies, Inc. Method of producing shaped bodies of semiconductor materials
US6893578B1 (en) * 2001-12-05 2005-05-17 Sandia Corporation Selective etchant for oxide sacrificial material in semiconductor device fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Peter Harriott, Chemical Reactor Design, Marcel Dekker, 2003 *

Also Published As

Publication number Publication date
US20120063984A1 (en) 2012-03-15
TW201100586A (en) 2011-01-01
EP2421795A1 (fr) 2012-02-29
CA2759449A1 (fr) 2010-10-28
JP2012524022A (ja) 2012-10-11
AU2010239352A2 (en) 2011-12-22
AU2010239352A1 (en) 2011-11-10
CN102438945A (zh) 2012-05-02
KR20120023678A (ko) 2012-03-13
EP2421795A4 (fr) 2015-07-22
US20100266762A1 (en) 2010-10-21
WO2010123875A1 (fr) 2010-10-28

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