TWI493741B - 薄層太陽能模組用的回收方法 - Google Patents

薄層太陽能模組用的回收方法 Download PDF

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TWI493741B
TWI493741B TW098116367A TW98116367A TWI493741B TW I493741 B TWI493741 B TW I493741B TW 098116367 A TW098116367 A TW 098116367A TW 98116367 A TW98116367 A TW 98116367A TW I493741 B TWI493741 B TW I493741B
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solar module
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Uwe Wagner
Frank Schmieder
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Jenoptik Automatisierungstech
Ctf Solar Gmbh
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Description

薄層太陽能模組用的回收方法
該方法係用於對基板層由玻璃或其他雷射透明材料構成的薄層太陽能模組進行回收。
薄層太陽能模組係由基板層及覆蓋層構成，該基板層上依次覆有第一電極層、半導體層、第二電極層及用於封閉上述功能層的塑性層。該塑性層在一環行邊緣區域內直接覆在該基板層上。
不論該等功能層係由何種材料構成，只要基板層可被所用雷射輻射穿透，第一電極層可將所用雷射輻射吸收，即可使用該方法。
先前技術中存在用雷射輻射對單個或多個功能層進行建構及為邊緣徹底除去塗層的習知方法，此類方法係使被待移除層吸收的雷射輻射相對於雷射透明基板層之敞露表面定位，並將該雷射輻射對準該基板層。
本發明之方法必須使用可被第一電極層吸收的雷射輻射。此意為，需用雷射器為邊緣除去塗層及/或至少對該第一電極層進行建構的太陽能模組製造商亦可藉由該雷射器實施該回收方法。具有有利於邊緣除層之射束擴展及射束整形效果的裝置亦適用於本發明之方法的實施。
建構及邊緣除層之重點在於沿寬度處於20μm至90μm或10mm至60mm範圍內的軌跡徹底移除塗層，但不得使基板載體受損，然對於該回收方法而言，基板載體是否受損並不重要。
相對而言，本發明僅需使功能層之層結構與基板層分離，而非將一或多個塗層徹底移除，其中，僅第一電極層至少部分蒸發，緊接該第一電極層塗覆的半導體層儘可能不受影響。
同時亦須保證能量之施加所引起的局部熱負荷不會使塑性層熔化，藉此使該塑性層及保持原樣的功能層儘可能成一體地附著在覆蓋層上。
下文將藉由實施例對本發明進行詳細說明。
實施該方法時，所有實施例均須自薄層太陽能模組之基板層的敞露表面用處理用雷射輻射對該基板層進行掃描。
根據第一實施例，先對邊緣區域所包圍之內部區域進行完整掃描，藉此避免在材料蒸發過程中產生的氣體逸出。所產生之該封閉氣體容積可防止第一電極層之材料熔化所形成的熔液在基板層上凝固，從而使功能層之部分層結構再度與該基板層相連。
該掃描過程有利地沿在矩形薄層太陽能模組上縱向或橫向延伸的軌跡進行。藉由直接緊密相接地對該等軌跡進行掃描，可形成一封閉面，第一電極層藉由該封閉面與基板層分離，從而使在此過程中所形成的間隙內產生氣體容積。
然此種掃描方式會產生較高之熱負荷，該熱負荷主要會使塑性層非期望地變軟。
若以等於軌跡寬度或多倍軌跡寬度的間距對該等軌跡進行掃描，則可減小該熱負荷。
藉由沿彼此間隔一定距離之軌跡為該表面施加處理用雷射輻射，隨後再為間隔區內以相同軌跡間距錯開布置的軌跡施加處理用雷射輻射，可在空間及時間上實現比對軌跡進行相接掃描更均勻的能量施加。
藉此可在以縮短處理時間為目的之製程參數保持不變的情況下減小塑性層所受到的熱負荷。
實施軌跡掃描之有利方式係為，將處理用雷射輻射集中成一條垂直於軌跡方向的線，並沿軌跡方向移動該處理用雷射輻射。抑或使掃描器沿軌跡方向進行相對於薄層太陽能模組的移動，雷射束則沿軌跡寬度之方向對軌跡進行掃描。藉由此兩種運動的疊加可依次為該等軌跡所包圍的整個表面施加雷射輻射，其中，軌跡寬度可藉由掃描角之規定而發生變化。
在掃描過程中可有利地自覆蓋層一側對塑性層進行冷卻，其實現方式係使薄層太陽能模組的覆蓋層整面與散熱片接觸。
對內部區域進行完整掃描，從而使功能層之層結構與基板層分離後，僅邊緣區域內之塑性層仍附著在基板層上。
此連接亦可藉由雷射輻射加以解除。自基板層在邊緣區域內僅藉由熱輻射或熱傳導將塑性層有利地均勻加熱至軟化溫度，以便將仍附著在覆蓋層上的塑性層隨覆蓋層及仍附著在塑性層上之功能層一起自基板上移除。僅邊緣區域被加熱的塑性層在其內部區域仍與覆蓋層相連。
實施過此處理步驟後，基板層與薄層太陽能模組之其餘部分分離。
隨後可藉由與使塑性層之邊緣區域與基板層分離之方式相同的方式，使仍帶有功能層之層結構的塑性層與覆蓋層分離。
上述處理的結果是一方面得到須接受進一步分離處理的基板層及覆蓋層，此二者通常由相同材料(特別是玻璃)構成，另一方面得到須接受進一步分離處理的塑性層，該塑性層與第二電極層及半導體層相連。
實驗結果表明，使所產生之氣體容積保持被封閉狀態，此措施並非在任何情況下均為有利舉措。亦即，將所產生之氣體容積保持在基板層及第一電極層之間以及藉由附加供氣增大該氣體容積或藉由排氣減小該氣體容積之舉措是否有利於製程，此點特定言之係取決於該第一電極層之材料的特性。
因此，第二實施例係先藉由邊緣區域(在該邊緣區域內，塑性層直接附著在基板層上)構建至少一開口，隨後再根據第一實施例對內部區域進行掃描。該開口可藉由在該邊緣區域內進行局部加熱(例如用熱空氣)而形成，並藉由楔狀物或管件之插入而保持暢通。在此情況下，所產生之氣體容積即可透過該開口逸出。亦可藉由該開口輸入外部氣體，以便產生有利於該分離過程的輕微過壓。

Claims (9)

  1. 一種薄層太陽能模組回收方法，其中，該等薄層太陽能模組係由基板層、塑性層及覆蓋層構成，該基板層具有由第一電極層、半導體層及第二電極層構成的功能層的結構，該塑性層用於封裝該些功能層，該些功能層且在一環行邊緣區域內且包含一內區域且直接覆在該基板層上，其中，該基板層可被處理用雷射輻射穿透，該第一電極層可將該處理用雷射輻射吸收，其特徵在於，用該處理用雷射輻射對該基板層之敞露表面透過該內區域進行掃描，使該第一電極層藉由對該處理用雷射輻射的吸收至少部分蒸發，從而使該等功能層之層結構與該基板層分離，且產生封入的氣泡體積以避免該層結構再與該基材層接合，藉此使該從功能層(其與該塑膠層和覆蓋層相連)分離的基板層可進一步分別處理。
  2. 如申請專利範圍第1項之薄層太陽能模組回收方法，其中：透過該覆蓋層將該塑性層加熱至軟化溫度，自該塑性層上移除該覆蓋層，藉此使該從功能層(其與該塑膠層連接)分離的覆蓋層可進一步分別處理。
  3. 如申請專利範圍第1項之薄層太陽能模組回收方法，其中：對該基板層進行完整掃描，隨後對該邊緣區域進行加熱。
  4. 如申請專利範圍第3項之薄層太陽能模組回收方 法，其中：沿彼此鄰接之軌跡對該內部區域進行掃描，從而形成一封閉面，該第一電極層藉由該封閉面與該基板層分離，從而形成一封閉間隙，所產生之氣體容積封閉在該間隙內。
  5. 如申請專利範圍第1項之薄層太陽能模組回收方法，其中：以等於軌跡寬度或多倍軌跡寬度的間距沿彼此間隔一定距離之軌跡對該內部區域進行掃描，藉此減小熱負荷。
  6. 如申請專利範圍第1項之薄層太陽能模組回收方法，其中：在該掃描過程中自該覆蓋層一側對該塑性層進行冷卻。
  7. 如申請專利範圍第4項之薄層太陽能模組回收方法，其中：在對該內部區域進行掃描之前，先在該環行邊緣區域內構建至少一開口。
  8. 如申請專利範圍第7項之薄層太陽能模組回收方法，其中：藉由該至少一開口自該間隙內排出所產生的氣體。
  9. 如申請專利範圍第7項之薄層太陽能模組回收方法，其中：藉由該至少一開口向該間隙內輸入外部氣體。
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