TWI492426B - Light emitting device package - Google Patents
Light emitting device package Download PDFInfo
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- TWI492426B TWI492426B TW099106432A TW99106432A TWI492426B TW I492426 B TWI492426 B TW I492426B TW 099106432 A TW099106432 A TW 099106432A TW 99106432 A TW99106432 A TW 99106432A TW I492426 B TWI492426 B TW I492426B
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- lead frame
- metal layer
- device package
- emitting device
- illuminating device
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- 239000002184 metal Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 238000007747 plating Methods 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000003566 sealing material Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 13
- 238000000465 moulding Methods 0.000 description 9
- 238000009966 trimming Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
本發明係主張關於2009年03月10日申請之韓國專利案號10-2009-0020064之優先權。藉以引用的方式併入本文用作參考。The present invention claims priority to Korean Patent No. 10-2009-0020064 filed on March 10, 2009. This is incorporated herein by reference.
本發明是有關於一種發光裝置封裝(Light Emitting Device Package)。The present invention relates to a Light Emitting Device Package.
III-V族氮化物半導體(Group III-V nitride semiconductors)可依其物理與化學特性被用來當作例如發光二極體(LED)或雷射二極體(Laser Diodes,LD)發光裝置的主要原料。一般而言，III-V族氮化物半導體可由具有Inx Aly Ga1-x-y N(,,)化合物公式的半導體材料來形成。Group III-V nitride semiconductors can be used as, for example, a light emitting diode (LED) or a laser diode (LD) illuminator according to their physical and chemical properties. main ingreadient. In general, the III-V nitride semiconductor may have In x Al y Ga 1-xy N ( , , The semiconductor compound of the compound formula is formed.
發光二極體為可將電能轉換成紅外光(infrared rays)或利用化合物半導體特性之光的半導體裝置，據此以收發訊號或用來當作光的來源。由氮化物半導體材料所組成的發光二極體或雷射二極體可用來當作用以產生光的發光裝置，例如：當作一行動電話鍵盤、一電子顯示面板或其他照明裝置的一發光部之光源。A light-emitting diode is a semiconductor device that converts electrical energy into infrared rays or light that utilizes the properties of a compound semiconductor, whereby the signal is transmitted or received or used as a source of light. A light-emitting diode or a laser diode composed of a nitride semiconductor material can be used as a light-emitting device for generating light, for example, as a light-emitting portion of a mobile phone keypad, an electronic display panel or other illumination device. Light source.
本發明提供一種具有新結構的發光裝置封裝。The present invention provides a light emitting device package having a new structure.
本發明提供一種包含部份塗佈有一薄金屬層之導線架的發光裝置封裝。The present invention provides a light emitting device package comprising a lead frame partially coated with a thin metal layer.
本發明提供一種包含設置於導線架與封裝主體之間之開口的一薄金屬層的發光裝置封裝。The present invention provides a light emitting device package comprising a thin metal layer disposed between an opening between a lead frame and a package body.
在一實施例中，一種於此被廣泛描述的發光裝置封裝包含一封裝主體其具有一孔穴；穿過封裝主體的一導線架使得此導線架的一側設置於孔穴且導線架的另一側暴露於封裝主體的外部，所述導線架部份塗佈有一金屬薄層；以及一設置於孔穴而電性連接導線架的發光裝置。In an embodiment, a light-emitting device package widely described herein includes a package body having a hole; a lead frame passing through the package body such that one side of the lead frame is disposed on the hole and the other side of the lead frame Exposed to the outside of the package body, the lead frame portion is coated with a thin metal layer; and a light-emitting device disposed in the hole to electrically connect the lead frame.
在另一實施例中，一種於此被廣泛描述的發光裝置封裝能包含一封裝主體其具有一孔穴；穿過封裝主體的一導線架使得此導線架的一側設置於孔穴且導線架的另一側暴露於封裝主體的一外部，所述導線架部份塗佈有一金屬薄層；以及一設置於孔穴而電性連接導線架的發光裝置，其中導線架至少塗佈有一鍍鎳層(nickel plating layer)、一鍍金層(gold plating layer)或一鍍銀層(silver plating layer)其中之一者，且一金屬薄層選擇性地設置於此電鍍層上。In another embodiment, a light-emitting device package widely described herein can include a package body having a cavity; a lead frame passing through the package body such that one side of the lead frame is disposed in the hole and the lead frame is further One side is exposed to an outer portion of the package body, the lead frame portion is coated with a thin metal layer, and a light-emitting device is disposed on the hole to electrically connect the lead frame, wherein the lead frame is coated with at least one nickel plating layer (nickel) One of a plating layer, a gold plating layer or a silver plating layer, and a thin metal layer is selectively disposed on the plating layer.
為讓本發明之上述目的、特徵和特點能更明顯易懂，茲配合圖式將本發明相關實施例詳細說明如下。The above described objects, features, and characteristics of the present invention will become more apparent from the aspects of the invention.
如圖1所示一種發光裝置封裝100可包含一封裝主體110中具有一孔穴114、第一導線架(first lead frame)131與第二導線架(second lead frame)132、一發光裝置120以及一密封材料(sealing material)130。A light emitting device package 100 as shown in FIG. 1 can include a package body 110 having a cavity 114, a first lead frame 131 and a second lead frame 132, a light emitting device 120, and a Sealing material 130.
封裝主體110可由例如一PCB、一陶瓷基板(ceramic substrate)以及一樹脂材料所組成。如圖1所示的實施例中，封裝主體110可包含聚鄰苯二甲酰胺樹脂(polyphthalamide(PPA) resin)。封裝主體110包括一下主體111與一上主體112。下主體111與上主體112與第一導線架131與第二導線架132可以射出成型(injection-molded)方式而形成一單件(single piece)。或者，上主體112可設置於下主體111及第一導線架131與第二導線架132上。如圖1所示的實施例中，封裝主體110的下主體111與上主體112可以一單件形成，但標示不同的元件符號以利於清楚說明。The package body 110 may be composed of, for example, a PCB, a ceramic substrate, and a resin material. In the embodiment shown in FIG. 1, the package body 110 may comprise a polyphthalamide (PPA) resin. The package body 110 includes a lower body 111 and an upper body 112. The lower body 111 and the upper body 112 and the first lead frame 131 and the second lead frame 132 may be formed in an injection-molded manner to form a single piece. Alternatively, the upper body 112 can be disposed on the lower body 111 and the first lead frame 131 and the second lead frame 132. In the embodiment shown in FIG. 1, the lower body 111 and the upper body 112 of the package body 110 may be formed in a single piece, but different component symbols are indicated for the sake of clarity.
第一導線架131與第二導線架132能穿過封裝主體110。如圖1所示的實施例包含第一導線架131與第二導線架132；然而，可依據發光裝置封裝100的設計包含三個或多個導線架。The first lead frame 131 and the second lead frame 132 can pass through the package body 110. The embodiment shown in FIG. 1 includes a first lead frame 131 and a second lead frame 132; however, three or more lead frames may be included depending on the design of the light emitting device package 100.
第一導線架131與第二導線架132的第一端可穿過封裝主體110並暴露於孔穴114，且第一導線架131與第二導線架132的第二端能暴露於封裝主體110的外部。第一導線架131與第二導線架132為電性分隔且配置成用以提供電源至發光裝置120。The first ends of the first lead frame 131 and the second lead frame 132 can pass through the package body 110 and be exposed to the holes 114 , and the second ends of the first lead frame 131 and the second lead frame 132 can be exposed to the package body 110 external. The first lead frame 131 and the second lead frame 132 are electrically separated and configured to provide power to the light emitting device 120.
於一些實施例中，當俯視時，孔穴114為一圓形或多邊形，且孔穴114的圓周表面116可垂直下主體111或從下主體111的頂面傾斜。當然其他種形式亦可，並不限定於此。In some embodiments, the aperture 114 is a circle or polygon when viewed from above, and the circumferential surface 116 of the aperture 114 can be vertically inclined from the lower body 111 or from the top surface of the lower body 111. Of course, other forms are also possible, and are not limited thereto.
發光裝置120可置放於第二導線架132上。所述發光裝置120利用例如金屬線(wires)122而可電性連接第一導線架131與第二導線架132。The light emitting device 120 can be placed on the second lead frame 132. The light emitting device 120 can electrically connect the first lead frame 131 and the second lead frame 132 by using, for example, wires 122.
發光裝置120可利用不同方法而可電性連接第一導線架131與第二導線架132。例如：發光裝置120利用一倒裝接合法(flip bonding method)而可電性連接第一導線架131與第二導線架132。或者，發光裝置120利用一黏晶法(die bonding method)而可電性連接第二導線架132，之後利用一金屬線電性連接第一導線架131。當然其他方法亦可，並不限定於此。The light emitting device 120 can electrically connect the first lead frame 131 and the second lead frame 132 by using different methods. For example, the light emitting device 120 can electrically connect the first lead frame 131 and the second lead frame 132 by a flip bonding method. Alternatively, the light-emitting device 120 can be electrically connected to the second lead frame 132 by a die bonding method, and then electrically connected to the first lead frame 131 by using a metal wire. Of course, other methods are also possible, and are not limited thereto.
此外，發光裝置120可置放於封裝主體110內或者除了第一導線架131與第二導線架132以外的一導線架上。In addition, the light emitting device 120 can be placed in the package body 110 or on a lead frame other than the first lead frame 131 and the second lead frame 132.
發光裝置120可為用以發射紅色、綠色以及藍色光的一發光二極體晶片(light emitting diode chip)。或者，發光裝置120為用以發射紫外光(UV light)的一發光二極體晶片。The light emitting device 120 can be a light emitting diode chip for emitting red, green, and blue light. Alternatively, the light emitting device 120 is a light emitting diode chip for emitting ultraviolet light.
被提供於孔穴114中的密封材料130可由例如：一矽樹脂(silicon resin)、一環氧樹脂(epoxy resin)或其他適當的透明樹脂材料所組成，且一螢光材料(fluorescent material)可佈滿全部或部份的此透明樹脂。The sealing material 130 provided in the cavity 114 may be composed of, for example, a silicon resin, an epoxy resin or other suitable transparent resin material, and a fluorescent material may be cloth. Full or partial of this transparent resin.
每一第一導線架131與第二導線架132可分支成二或多個部份並穿過封裝主體110的至少二個部份。Each of the first lead frame 131 and the second lead frame 132 may be branched into two or more portions and pass through at least two portions of the package body 110.
第一導線架131與第二導線架132可藉由例如修剪與成型程序(trimming and forming processes)而彎曲於封裝主體110的周圍。如圖1所示的實施例中，第一導線架131與第二導線架132利用彎折而接觸下主體111的側邊與底側。The first lead frame 131 and the second lead frame 132 may be bent around the package body 110 by, for example, trimming and forming processes. In the embodiment shown in FIG. 1, the first lead frame 131 and the second lead frame 132 are bent to contact the side and bottom sides of the lower body 111.
於一些實施例中，第一導線架131與第二導線架132可由一金屬或包含以銅(Cu)為主要成分的合金所組成，且第一導線架131與第二導線架132至少塗佈有一鍍鎳層(nickel plating layer)、一鍍金層(gold plating layer)或一鍍銀層(silver plating layer)其中之一者。於此實施例，第一導線架131與第二導線架132為塗佈有一鍍銀層。In some embodiments, the first lead frame 131 and the second lead frame 132 may be composed of a metal or an alloy containing copper (Cu) as a main component, and the first lead frame 131 and the second lead frame 132 are coated at least. There is one of a nickel plating layer, a gold plating layer or a silver plating layer. In this embodiment, the first lead frame 131 and the second lead frame 132 are coated with a silver plating layer.
一薄金屬層145部份地設置於第一導線架131與第二導線架132上。例如：所述薄金屬層145可利用一使用包含有錫(Sn)材料的電鍍程序而成形。A thin metal layer 145 is partially disposed on the first lead frame 131 and the second lead frame 132. For example, the thin metal layer 145 can be formed using an electroplating process using a tin (Sn) material.
此薄金屬層145可被提供在暴露於封裝主體110外部的第一導線架131與第二導線架132之部份上。薄金屬層145包括一第一金屬層其電鍍在該導線架的一整個表面上，以及一第二金屬層其電鍍在該導線架的一第一部分上，其被提供在該上主體與該導線架之間的一開口，可被提供於從介於第一導線架131和封裝主體110與第二導線架132和封裝主體110的開口220暴露出的第一導線架131與第二導線架132。The thin metal layer 145 may be provided on a portion of the first lead frame 131 and the second lead frame 132 exposed to the outside of the package body 110. The thin metal layer 145 includes a first metal layer plated on an entire surface of the lead frame, and a second metal layer plated on a first portion of the lead frame, which is provided on the upper body and the wire An opening between the shelves may be provided from the first lead frame 131 and the second lead frame 132 exposed from the first lead frame 131 and the package body 110 and the second lead frame 132 and the opening 220 of the package body 110. .
於修剪與成型程序後，第一導線架131與第二導線架132以及封裝主體110之間會有一些分離，造成第一導線架131與第二導線架132以及封裝主體110之間的開口220。After the trimming and molding process, there is some separation between the first lead frame 131 and the second lead frame 132 and the package body 110, resulting in an opening 220 between the first lead frame 131 and the second lead frame 132 and the package body 110. .
由於薄金屬層145形成於第一導線架131與第二導線架132的修剪與成型之後，此薄金屬層145可設置於形成此開口220的第一導線架131與第二導線架132的部份上。然 而，薄金屬層145並非設置於第一導線架131與第二導線架132以及封裝主體110之間的接觸表面上。Since the thin metal layer 145 is formed after the trimming and molding of the first lead frame 131 and the second lead frame 132, the thin metal layer 145 may be disposed on the first lead frame 131 and the second lead frame 132 forming the opening 220. Share. Of course However, the thin metal layer 145 is not disposed on the contact surface between the first lead frame 131 and the second lead frame 132 and the package body 110.
發光裝置封裝100可利用表面黏著技術(surface mount technology,SMT)而設置於一基板上，由於薄金屬層145可提高熱效率因此發光裝置封裝100可容易地被安裝。此外，薄金屬層145可防止第一導線架131與第二導線架132的氧化並改善第一導線架131與第二導線架132的電氣特性。再者，由於薄金屬層145被充填於開口220，因此可防止空氣、濕氣或外界物質或經由開口220來滲透。The light emitting device package 100 can be disposed on a substrate by surface mount technology (SMT). Since the thin metal layer 145 can improve thermal efficiency, the light emitting device package 100 can be easily mounted. In addition, the thin metal layer 145 can prevent oxidation of the first lead frame 131 and the second lead frame 132 and improve electrical characteristics of the first lead frame 131 and the second lead frame 132. Furthermore, since the thin metal layer 145 is filled in the opening 220, it is possible to prevent air, moisture or foreign matter from penetrating through the opening 220.
於此具體地描述一種發光裝置封裝的製造將配合圖2至圖5來說明。The manufacture of a light emitting device package will be described in detail herein in conjunction with FIGS. 2 through 5.
請參閱圖2，將第一導線架131與第二導線架132放置於一成型設備(molding apparatus)且注入一樹脂以將第一導線架131與第二導線架132以及封裝主體110藉由成型(molding)成為一單件。Referring to FIG. 2, the first lead frame 131 and the second lead frame 132 are placed in a molding apparatus and a resin is injected to form the first lead frame 131 and the second lead frame 132 and the package body 110. (molding) becomes a single piece.
第一導線架131與第二導線架132可由一金屬或包含以銅(Cu)為主要成分的合金所組成，且第一導線架131與第二導線架132至少塗佈有預先被加入成型設備內的一鍍鎳層、一鍍金層或一鍍銀層其中之一者。於此實施例，第一導線架131與第二導線架132為塗佈有一鍍銀層。The first lead frame 131 and the second lead frame 132 may be composed of a metal or an alloy containing copper (Cu) as a main component, and the first lead frame 131 and the second lead frame 132 are at least coated with a molding device previously added. One of a nickel plating layer, a gold plating layer or a silver plating layer. In this embodiment, the first lead frame 131 and the second lead frame 132 are coated with a silver plating layer.
請參閱圖3，一發光裝置120置放於第二導線架132上且利用金屬線122電性連接第一導線架131與第二導線架132。Referring to FIG. 3 , a light emitting device 120 is placed on the second lead frame 132 and electrically connected to the first lead frame 131 and the second lead frame 132 by using the metal wire 122 .
請參閱圖4，將一密封材料130注入封裝主體110的一孔穴114中。所述密封材料130可包含有一螢光材料。Referring to FIG. 4, a sealing material 130 is injected into a cavity 114 of the package body 110. The sealing material 130 may comprise a fluorescent material.
之後，於第一導線架131與第二導線架132上執行一修剪與成型程序以令第一導線架131與第二導線架132接觸封裝主體110的側邊與底側。於修剪與成型程序中，開口220可形成於第一導線架131與第二導線架132以及封裝主體110之間。Thereafter, a trimming and molding process is performed on the first lead frame 131 and the second lead frame 132 to bring the first lead frame 131 and the second lead frame 132 into contact with the side and bottom sides of the package body 110. In the trimming and molding process, the opening 220 may be formed between the first lead frame 131 and the second lead frame 132 and the package body 110.
請參閱圖5，設置一薄金屬層145於第一導線架131與第二導線架132上。所述薄金屬層145可利用例如使用錫(Sn)材料的電鍍程序來成形。Referring to FIG. 5, a thin metal layer 145 is disposed on the first lead frame 131 and the second lead frame 132. The thin metal layer 145 can be formed using, for example, an electroplating procedure using a tin (Sn) material.
薄金屬層145可形成於暴露在外部的第一導線架131與第二導線架132之部份上，但不可形成於暴露在孔穴114的第一導線架131與第二導線架132的部份上或與封裝主體110接觸的第一導線架131與第二導線架132的部份。The thin metal layer 145 may be formed on portions of the first lead frame 131 and the second lead frame 132 exposed to the outside, but may not be formed on portions of the first lead frame 131 and the second lead frame 132 exposed to the holes 114. A portion of the first lead frame 131 and the second lead frame 132 that are in contact with the package body 110.
薄金屬層145可填補形成於第一導線架131與第二導線架132以及封裝主體110之間的開口220。The thin metal layer 145 can fill the opening 220 formed between the first lead frame 131 and the second lead frame 132 and the package body 110.
圖6以及圖7為根據本發明另一實施例發光裝置封裝的剖視圖。於一發光裝置封裝200中可包含一封裝主體110其具有一孔穴114、第一導線架231與第二導線架232、一發光裝置120以及一密封材料130。6 and 7 are cross-sectional views of a light emitting device package in accordance with another embodiment of the present invention. The package body 200 can include a package body 110 having a cavity 114, a first lead frame 231 and a second lead frame 232, a light emitting device 120, and a sealing material 130.
第一導線架231與第二導線架232的部份從封裝主體110向外凸出，所以不同於圖1所示的實施例，第一導線架231與第二導線架232並未彎曲且未接觸封裝主體110的 側邊與底側。The portions of the first lead frame 231 and the second lead frame 232 protrude outward from the package body 110. Therefore, unlike the embodiment shown in FIG. 1, the first lead frame 231 and the second lead frame 232 are not bent and are not Contacting the package body 110 Side and bottom sides.
然而，當於第一導線架231與第二導線架232上執行一修剪程序時，開口220可形成於第一導線架231與第二導線架232以及封裝主體110之間。於此例，一薄金屬層145被提供在經由開口220而暴露出的第一導線架231與第二導線架232的部份上。However, when a trimming process is performed on the first lead frame 231 and the second lead frame 232, the opening 220 may be formed between the first lead frame 231 and the second lead frame 232 and the package body 110. In this example, a thin metal layer 145 is provided on portions of the first leadframe 231 and the second leadframe 232 that are exposed through the opening 220.
於上述所描述的實施例中，於複數個導線架上執行修剪與成型程序。然而，在不同的實施例中，一導線架可形成於垂直地穿過封裝主體的一通孔結構，且修剪與成型程序可於另一導線架上執行。In the embodiment described above, the trimming and molding process is performed on a plurality of lead frames. However, in various embodiments, a leadframe can be formed in a through-hole structure that passes vertically through the package body, and the trimming and molding process can be performed on another leadframe.
綜上所述，乃僅記載本發明為呈現解決問題所採用的技術手段之較佳實施方式或實施例而已，並非用來限定本發明專利實施之範圍。即凡與本發明專利申請範圍文義相符，或依本發明專利範圍所做的均等變化與修飾，皆為本發明專利範圍所涵蓋。In summary, the present invention is only described as a preferred embodiment or embodiment of the technical means for solving the problem, and is not intended to limit the scope of the invention. That is, the equivalent changes and modifications made in accordance with the scope of the patent application of the present invention or the scope of the invention are covered by the scope of the invention.
100,200‧‧‧發光裝置封裝100,200‧‧‧Lighting device package
110‧‧‧封裝主體110‧‧‧Package body
111‧‧‧下主體111‧‧‧Lower subject
112‧‧‧上主體112‧‧‧Upper subject
114‧‧‧孔穴114‧‧‧ holes
116‧‧‧圓周表面116‧‧‧circular surface
120‧‧‧發光裝置120‧‧‧Lighting device
122‧‧‧金屬線122‧‧‧Metal wire
130‧‧‧密封材料130‧‧‧ Sealing material
131,231‧‧‧第一導線架131,231‧‧‧First lead frame
132,232‧‧‧第二導線架132,232‧‧‧Second lead frame
145‧‧‧薄金屬層145‧‧‧thin metal layer
220‧‧‧開口220‧‧‧ openings
圖1為根據本發明一實施例發光裝置封裝的剖視圖；圖2至圖5為說明圖1發光裝置封裝的製造流程示意圖；及圖6與圖7為根據本發明另一實施例發光裝置封裝的剖視圖。1 is a cross-sectional view of a light emitting device package according to an embodiment of the present invention; FIGS. 2 to 5 are schematic views showing a manufacturing process of the light emitting device package of FIG. 1; and FIGS. 6 and 7 are light emitting device packages according to another embodiment of the present invention. Cutaway view.
100．．．發光裝置封裝100. . . Illuminator package
110．．．封裝主體110. . . Package body
111．．．下主體111. . . Lower body
112．．．上主體112. . . Upper body
114．．．孔穴114. . . hole
116．．．圓周表面116. . . Circumferential surface
120．．．發光裝置120. . . Illuminating device
122．．．金屬線122. . . metal wires
130．．．密封材料130. . . Sealing material
131．．．第一導線架131. . . First lead frame
132．．．第二導線架132. . . Second lead frame
145．．．薄金屬層145. . . Thin metal layer
220．．．開口220. . . Opening
Claims (12)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| KR1020090020064A KR101047603B1 (en) | 2009-03-10 | 2009-03-10 | Light emitting device package and its manufacturing method |
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| TW201034265A TW201034265A (en) | 2010-09-16 |
| TWI492426B true TWI492426B (en) | 2015-07-11 |
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| TW099106432A TWI492426B (en) | 2009-03-10 | 2010-03-05 | Light emitting device package |
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| US (1) | US8258538B2 (en) |
| EP (1) | EP2228842B1 (en) |
| KR (1) | KR101047603B1 (en) |
| CN (1) | CN101834256B (en) |
| TW (1) | TWI492426B (en) |
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| CN102842667B (en) * | 2011-06-24 | 2015-02-04 | 展晶科技(深圳)有限公司 | Light-emitting diode packaging structure and method for producing same |
| TWI479622B (en) * | 2011-11-15 | 2015-04-01 | Xintec Inc | Chip package and method for forming the same |
| CN103427006B (en) * | 2012-05-14 | 2016-02-10 | 展晶科技(深圳)有限公司 | Light-emitting diode |
| CN103426979B (en) * | 2012-05-18 | 2016-06-08 | 展晶科技(深圳)有限公司 | The manufacture method of photodiode |
| JP2020527864A (en) * | 2017-07-18 | 2020-09-10 | ルミレッズ リミテッド ライアビリティ カンパニー | Light emitting device including lead frame and insulation material |
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Also Published As
| Publication number | Publication date |
|---|---|
| US8258538B2 (en) | 2012-09-04 |
| EP2228842A2 (en) | 2010-09-15 |
| US20100230700A1 (en) | 2010-09-16 |
| CN101834256B (en) | 2015-11-25 |
| KR20100101737A (en) | 2010-09-20 |
| TW201034265A (en) | 2010-09-16 |
| KR101047603B1 (en) | 2011-07-07 |
| EP2228842A3 (en) | 2010-11-03 |
| EP2228842B1 (en) | 2014-08-20 |
| CN101834256A (en) | 2010-09-15 |
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