TWI492005B - 基板於處理期間之光譜監控的適合度 - Google Patents

基板於處理期間之光譜監控的適合度 Download PDF

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Publication number
TWI492005B
TWI492005B TW098135987A TW98135987A TWI492005B TW I492005 B TWI492005 B TW I492005B TW 098135987 A TW098135987 A TW 098135987A TW 98135987 A TW98135987 A TW 98135987A TW I492005 B TWI492005 B TW I492005B
Authority
TW
Taiwan
Prior art keywords
sequence
spectrum
spectra
current
determining
Prior art date
Application number
TW098135987A
Other languages
English (en)
Chinese (zh)
Other versions
TW201022870A (en
Inventor
Jeffrey Drue David
Boguslaw A Swedek
Dominic J Benvegnu
Harry Q Lee
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/258,923 external-priority patent/US8392012B2/en
Priority claimed from US12/258,966 external-priority patent/US20100103422A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201022870A publication Critical patent/TW201022870A/zh
Application granted granted Critical
Publication of TWI492005B publication Critical patent/TWI492005B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW098135987A 2008-10-27 2009-10-23 基板於處理期間之光譜監控的適合度 TWI492005B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/258,923 US8392012B2 (en) 2008-10-27 2008-10-27 Multiple libraries for spectrographic monitoring of zones of a substrate during processing
US12/258,966 US20100103422A1 (en) 2008-10-27 2008-10-27 Goodness of fit in spectrographic monitoring of a substrate during processing

Publications (2)

Publication Number Publication Date
TW201022870A TW201022870A (en) 2010-06-16
TWI492005B true TWI492005B (zh) 2015-07-11

Family

ID=42226308

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098135987A TWI492005B (zh) 2008-10-27 2009-10-23 基板於處理期間之光譜監控的適合度

Country Status (4)

Country Link
JP (1) JP5774482B2 (ja)
KR (1) KR101616024B1 (ja)
TW (1) TWI492005B (ja)
WO (1) WO2010062497A2 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8751033B2 (en) * 2008-11-14 2014-06-10 Applied Materials, Inc. Adaptive tracking spectrum features for endpoint detection
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing
US8954186B2 (en) * 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
US8547538B2 (en) * 2011-04-21 2013-10-01 Applied Materials, Inc. Construction of reference spectra with variations in environmental effects
JP6030636B2 (ja) * 2011-04-28 2016-11-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ モデルに基づく、研磨のためのスペクトルライブラリの生成
US9168630B2 (en) * 2012-04-23 2015-10-27 Applied Materials, Inc. User-input functions for data sequences in polishing endpoint detection
US9221147B2 (en) * 2012-10-23 2015-12-29 Applied Materials, Inc. Endpointing with selective spectral monitoring
US9375824B2 (en) * 2013-11-27 2016-06-28 Applied Materials, Inc. Adjustment of polishing rates during substrate polishing with predictive filters

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020173084A1 (en) * 2001-03-12 2002-11-21 Makoto Ohkawa Method of measuring thickness of a semiconductor layer and method of manufacturing a semiconductor substrate
US6609086B1 (en) * 2002-02-12 2003-08-19 Timbre Technologies, Inc. Profile refinement for integrated circuit metrology
US20070224915A1 (en) * 2005-08-22 2007-09-27 David Jeffrey D Substrate thickness measuring during polishing
WO2008070736A1 (en) * 2006-12-05 2008-06-12 Applied Materials, Inc. Determining copper concentration in spectra

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
US6106662A (en) * 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6190234B1 (en) * 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
US6334807B1 (en) * 1999-04-30 2002-01-01 International Business Machines Corporation Chemical mechanical polishing in-situ end point system
JP2001287159A (ja) * 2000-04-05 2001-10-16 Nikon Corp 表面状態測定方法及び測定装置及び研磨装置及び半導体デバイス製造方法
US6491569B2 (en) * 2001-04-19 2002-12-10 Speedfam-Ipec Corporation Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
JP3932836B2 (ja) * 2001-07-27 2007-06-20 株式会社日立製作所 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法
US6806948B2 (en) * 2002-03-29 2004-10-19 Lam Research Corporation System and method of broad band optical end point detection for film change indication
JP4542324B2 (ja) * 2002-10-17 2010-09-15 株式会社荏原製作所 研磨状態監視装置及びポリッシング装置
US7265382B2 (en) * 2002-11-12 2007-09-04 Applied Materials, Inc. Method and apparatus employing integrated metrology for improved dielectric etch efficiency
JP2004191266A (ja) * 2002-12-13 2004-07-08 Hitachi Ltd 膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置
US7008296B2 (en) * 2003-06-18 2006-03-07 Applied Materials, Inc. Data processing for monitoring chemical mechanical polishing
KR101078007B1 (ko) * 2004-06-21 2011-10-28 가부시키가이샤 에바라 세이사꾸쇼 폴리싱장치 및 폴리싱방법
KR101361875B1 (ko) * 2005-05-26 2014-02-12 가부시키가이샤 니콘 Ｃｍｐ 연마 장치에서의 연마 종료점 검출 방법, ｃｍｐ연마 장치, 및 반도체 디바이스의 제조 방법
WO2007024807A2 (en) * 2005-08-22 2007-03-01 Applied Materials, Inc. Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
TWI445098B (zh) * 2007-02-23 2014-07-11 Applied Materials Inc 使用光譜來判斷研磨終點
US7952708B2 (en) * 2007-04-02 2011-05-31 Applied Materials, Inc. High throughput measurement system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020173084A1 (en) * 2001-03-12 2002-11-21 Makoto Ohkawa Method of measuring thickness of a semiconductor layer and method of manufacturing a semiconductor substrate
US6609086B1 (en) * 2002-02-12 2003-08-19 Timbre Technologies, Inc. Profile refinement for integrated circuit metrology
US20070224915A1 (en) * 2005-08-22 2007-09-27 David Jeffrey D Substrate thickness measuring during polishing
WO2008070736A1 (en) * 2006-12-05 2008-06-12 Applied Materials, Inc. Determining copper concentration in spectra

Also Published As

Publication number Publication date
JP2012507146A (ja) 2012-03-22
KR101616024B1 (ko) 2016-04-28
TW201022870A (en) 2010-06-16
WO2010062497A2 (en) 2010-06-03
JP5774482B2 (ja) 2015-09-09
KR20110090965A (ko) 2011-08-10
WO2010062497A3 (en) 2010-08-05

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