WO2010062497A3 - Goodness of fit in spectrographic monitoring of a substrate during processing - Google Patents

Goodness of fit in spectrographic monitoring of a substrate during processing Download PDF

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Publication number
WO2010062497A3
WO2010062497A3 PCT/US2009/061351 US2009061351W WO2010062497A3 WO 2010062497 A3 WO2010062497 A3 WO 2010062497A3 US 2009061351 W US2009061351 W US 2009061351W WO 2010062497 A3 WO2010062497 A3 WO 2010062497A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
spectra
current
sequence
library
reference spectra
Prior art date
Application number
PCT/US2009/061351
Other languages
French (fr)
Other versions
WO2010062497A2 (en )
Inventor
Jeffrey Drue David
Boguslaw A. Swedek
Dominic J. Benvegnu
Harry Q. Lee
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Abstract

A sequence of current spectra is obtained with an in-situ optical monitoring system, and each current spectrum is compared to a plurality of reference spectra from a plurality of reference spectra libraries. The library that provides a best fit to the sequence of current spectra is determined, and a polishing endpoint is determined based on the sequence of current spectra and the library that provides a best fit to the sequence of current spectra. First and second sequences of current spectra of reflected light can be received from first and second zones of a substrate. Each current spectrum from the first and second sequence of current spectra is compared to a plurality of reference spectra from first and second reference spectra libraries, respectively, to generate first and second sequences of best match reference spectra, respectively. The second reference spectra library is distinct from the first reference spectra library.
PCT/US2009/061351 2008-10-27 2009-10-20 Goodness of fit in spectrographic monitoring of a substrate during processing WO2010062497A3 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/258,923 2008-10-27
US12258966 US20100103422A1 (en) 2008-10-27 2008-10-27 Goodness of fit in spectrographic monitoring of a substrate during processing
US12258923 US8392012B2 (en) 2008-10-27 2008-10-27 Multiple libraries for spectrographic monitoring of zones of a substrate during processing
US12/258,966 2008-10-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011533275A JP5774482B2 (en) 2008-10-27 2009-10-20 Adaptability in the spectral monitoring of the substrate during processing

Publications (2)

Publication Number Publication Date
WO2010062497A2 true WO2010062497A2 (en) 2010-06-03
WO2010062497A3 true true WO2010062497A3 (en) 2010-08-05

Family

ID=42226308

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/061351 WO2010062497A3 (en) 2008-10-27 2009-10-20 Goodness of fit in spectrographic monitoring of a substrate during processing

Country Status (3)

Country Link
JP (1) JP5774482B2 (en)
KR (1) KR101616024B1 (en)
WO (1) WO2010062497A3 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8751033B2 (en) * 2008-11-14 2014-06-10 Applied Materials, Inc. Adaptive tracking spectrum features for endpoint detection
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing
US8547538B2 (en) * 2011-04-21 2013-10-01 Applied Materials, Inc. Construction of reference spectra with variations in environmental effects
WO2012148716A3 (en) * 2011-04-28 2012-12-20 Applied Materials, Inc. Varying coefficients and functions for polishing control

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030184732A1 (en) * 2002-03-29 2003-10-02 Lam Research System and method of broad band optical end point detection for film change indication
US20070224915A1 (en) * 2005-08-22 2007-09-27 David Jeffrey D Substrate thickness measuring during polishing
US20080206993A1 (en) * 2007-02-23 2008-08-28 Lee Harry Q Using Spectra to Determine Polishing Endpoints

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6106662A (en) * 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6190234B1 (en) * 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
US6334807B1 (en) * 1999-04-30 2002-01-01 International Business Machines Corporation Chemical mechanical polishing in-situ end point system
JP2001287159A (en) * 2000-04-05 2001-10-16 Nikon Corp Surface condition measuring method and measuring device, polishing machine, and semiconductor device manufacturing method
JP3946470B2 (en) * 2001-03-12 2007-07-18 株式会社デンソー Method for manufacturing a film thickness measuring method and a semiconductor substrate of the semiconductor layer
US6491569B2 (en) * 2001-04-19 2002-12-10 Speedfam-Ipec Corporation Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
JP3932836B2 (en) * 2001-07-27 2007-06-20 株式会社日立製作所 The thickness of the thin film measuring method and a manufacturing method of the device and device using the same
US6609086B1 (en) * 2002-02-12 2003-08-19 Timbre Technologies, Inc. Profile refinement for integrated circuit metrology
JP4542324B2 (en) * 2002-10-17 2010-09-15 株式会社島津製作所 Polishing state monitoring device and polishing apparatus
US7265382B2 (en) * 2002-11-12 2007-09-04 Applied Materials, Inc. Method and apparatus employing integrated metrology for improved dielectric etch efficiency
JP2004191266A (en) * 2002-12-13 2004-07-08 Hitachi Ltd Measuring method of film thickness and apparatus thereof, manufacturing method of thin-film device using apparatus, and manufacturing apparatus of the apparatus
US7008296B2 (en) * 2003-06-18 2006-03-07 Applied Materials, Inc. Data processing for monitoring chemical mechanical polishing
KR101078007B1 (en) * 2004-06-21 2011-10-28 가부시키가이샤 에바라 세이사꾸쇼 Polishing apparatus and polishing method
KR101361875B1 (en) * 2005-05-26 2014-02-12 가부시키가이샤 니콘 Method for detecting polishing end in cmp polishing device, cmp polishing device, and semiconductor device manufacturing method
KR101324644B1 (en) * 2005-08-22 2013-11-01 어플라이드 머티어리얼스, 인코포레이티드 Apparatus and methods for spectrum based monitoring of chemical mechanical polishing
US7840375B2 (en) * 2007-04-02 2010-11-23 Applied Materials, Inc. Methods and apparatus for generating a library of spectra

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030184732A1 (en) * 2002-03-29 2003-10-02 Lam Research System and method of broad band optical end point detection for film change indication
US20070224915A1 (en) * 2005-08-22 2007-09-27 David Jeffrey D Substrate thickness measuring during polishing
US20080206993A1 (en) * 2007-02-23 2008-08-28 Lee Harry Q Using Spectra to Determine Polishing Endpoints

Also Published As

Publication number Publication date Type
WO2010062497A2 (en) 2010-06-03 application
JP5774482B2 (en) 2015-09-09 grant
KR101616024B1 (en) 2016-04-28 grant
KR20110090965A (en) 2011-08-10 application
JP2012507146A (en) 2012-03-22 application

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