TWI492005B - Goodness of fit in spectrographic monitoring of a substrate during processing - Google Patents

Goodness of fit in spectrographic monitoring of a substrate during processing Download PDF

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TWI492005B
TWI492005B TW098135987A TW98135987A TWI492005B TW I492005 B TWI492005 B TW I492005B TW 098135987 A TW098135987 A TW 098135987A TW 98135987 A TW98135987 A TW 98135987A TW I492005 B TWI492005 B TW I492005B
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sequence
spectrum
spectra
current
determining
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TW098135987A
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TW201022870A (en
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Jeffrey Drue David
Boguslaw A Swedek
Dominic J Benvegnu
Harry Q Lee
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Applied Materials Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55Specular reflectivity
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Description

基板於處理期間之光譜監控的適合度The suitability of the substrate for spectral monitoring during processing

本說明書大體而言係關於基板於化學機械研磨期間之光譜監控。This description generally relates to the spectral monitoring of substrates during chemical mechanical polishing.

積體電路通常藉由在矽晶圓上相繼沈積導電層、半導電層或絕緣層而形成於基板上。一個製造步驟涉及在非平面表面上沈積填料層及平坦化該填料層。對於特定應用,使填料層平坦化直至曝露經圖案化之層之頂表面。導電填料層(例如)可沈積於經圖案化之絕緣層上以填充在該絕緣層中之溝槽或孔。在平坦化之後,殘留在該絕緣層之凸起圖案之間的導電層之部分形成在基板上之薄膜電路之間提供導電路徑的通孔、插塞及接線。對於其他應用(諸如氧化物研磨),使填料層平坦化直至預定厚度留在非平面表面上。另外,基板表面之平坦化通常為光微影所必需。The integrated circuit is usually formed on the substrate by successively depositing a conductive layer, a semiconductive layer or an insulating layer on the germanium wafer. One manufacturing step involves depositing a filler layer on a non-planar surface and planarizing the filler layer. For a particular application, the filler layer is planarized until the top surface of the patterned layer is exposed. A layer of electrically conductive filler, for example, may be deposited on the patterned insulating layer to fill the trenches or holes in the insulating layer. After planarization, portions of the conductive layer remaining between the raised patterns of the insulating layer form vias, plugs, and wires that provide a conductive path between the thin film circuits on the substrate. For other applications, such as oxide milling, the filler layer is planarized until a predetermined thickness remains on the non-planar surface. In addition, planarization of the substrate surface is generally necessary for photolithography.

化學機械研磨(CMP)為一種公認之平坦化方法。此平坦化方法通常需要將基板安裝於承載或研磨頭上。通常將基板之曝露表面置放抵靠旋轉的研磨圓盤墊或帶狀墊(belt pad)。該研磨墊可為標準墊或固定研磨墊(fixed abrasive pad)。標準墊具有耐用粗糙表面,而固定研磨墊具有保持於容納介質中之磨料微粒。該承載頭在基板上提供可控制之負載以使其推壓研磨墊。通常將研磨液體(諸如具有磨料微粒之漿料)供應至研磨墊之表面。Chemical mechanical polishing (CMP) is a recognized method of planarization. This planarization method typically requires mounting the substrate on a carrier or polishing head. The exposed surface of the substrate is typically placed against a rotating abrasive disc pad or belt pad. The polishing pad can be a standard pad or a fixed abrasive pad. The standard pad has a durable rough surface, while the fixed polishing pad has abrasive particles held in the receiving medium. The carrier head provides a controllable load on the substrate to cause it to push the polishing pad. A grinding liquid, such as a slurry having abrasive particles, is typically supplied to the surface of the polishing pad.

CMP中之一個問題為確定研磨製程是否完成,亦即,是否已將基板層平坦化至所要平面度或厚度,或何時已移除所要量之材料。導電層或膜過度研磨(移除太多)導致電路電阻增加。另一方面,導電層研磨不足(移除太少)導致電短路。舉例而言,關於漿料組成、研磨墊狀態、研磨墊與基板之間的相對速度及基板上之負載的變化可導致在基板之間或基板之不同區域之間材料移除率的變化。此外,在基板之間或基板之不同區域之間基板層之初始厚度的變化可導致經移除以達到目標厚度所需之量的變化。此等變化導致達到研磨終點所需之時間的變化。因此,僅僅根據研磨時間不能可靠地判定研磨終點。One problem in CMP is to determine if the polishing process is complete, that is, whether the substrate layer has been flattened to the desired flatness or thickness, or when the desired amount of material has been removed. Excessive grinding (removal of the conductive layer or film) results in an increase in circuit resistance. On the other hand, insufficient polishing of the conductive layer (too little removal) results in an electrical short. For example, variations in slurry composition, polishing pad state, relative speed between the polishing pad and the substrate, and load on the substrate can result in variations in material removal rates between the substrates or between different regions of the substrate. Moreover, variations in the initial thickness of the substrate layer between the substrates or between different regions of the substrate can result in a change in the amount required to remove the target thickness. These changes result in changes in the time required to reach the end of the grinding. Therefore, the polishing end point cannot be reliably determined based only on the polishing time.

在一一般態樣中,一種電腦實施之方法包括用一原位光學監控系統獲得一序列現時光譜,來自該序列現時光譜之每一現時光譜為自一基板反射之光的一光譜,該基板具有一經受研磨之最外層及至少一個下伏層;比較每一現時光譜與來自第一參考光譜庫之複數個參考光譜且判定一第一最佳匹配參考光譜以產生一第一序列第一最佳匹配參考光譜;判定對於該第一序列之一第一適合度;及基於該第一序列及該第一適合度判定一研磨終點。In a general aspect, a computer implemented method includes obtaining, by an in-situ optical monitoring system, a sequence of current spectra from which each current spectrum of the current spectrum of the sequence is a spectrum of light reflected from a substrate having An outermost layer subjected to grinding and at least one underlying layer; comparing each of the current spectra with a plurality of reference spectra from the first reference spectral library and determining a first best matching reference spectrum to produce a first sequence first best Matching a reference spectrum; determining a first fitness for the first sequence; and determining a polishing endpoint based on the first sequence and the first fitness.

在另一一般態樣中,一種電腦實施之方法包括用一原位光學監控系統獲得一序列現時光譜,來自該序列現時光譜之每一現時光譜為自一基板反射之光的一光譜,該基板具有一經受研磨之最外層及至少一個下伏層;比較每一現時光譜與來自複數個參考光譜庫之複數個參考光譜;判定哪個庫提供對該序列現時光譜的最佳適合;及基於該序列現時光譜及該提供對該序列現時光譜之最佳適合的庫判定一研磨終點。In another general aspect, a computer implemented method includes obtaining a sequence of current spectra from an in situ optical monitoring system, each current spectrum from the current spectrum of the sequence being a spectrum of light reflected from a substrate, the substrate Having an outermost layer subjected to grinding and at least one underlying layer; comparing each of the current spectra with a plurality of reference spectra from a plurality of reference spectral libraries; determining which library provides the best fit to the current spectrum of the sequence; and based on the sequence The current spectrum and the library that provides the best fit for the current spectrum of the sequence determine a polishing endpoint.

此等兩種方法之任一者的實施可包括下列特徵結構中之一或多者。可比較該現時光譜與來自一第二參考光譜庫之複數個參考光譜且可判定一第二最佳匹配參考光譜以產生一第二序列第二最佳匹配參考光譜,且可判定對該第二序列之第二適合度,且可基於該第一序列、該第二序列、該第一適合度及該第二適合度判定該終點。判定研磨終點可包括判定該第一最佳匹配參考光譜是否指示終點,且若是,則判定該第一適合度是否比該第二適合度更佳,且若是,則稱為終點。判定研磨終點可包括判定該第二最佳匹配參考光譜是否指示終點,且若是,則判定該第二最佳適合度是否比該第一適合度更佳,且若是,則稱為終點。可判定對於每一第一最佳匹配參考光譜之一第一索引值以產生一序列第一索引值,且判定該第二適合度可包括判定對於每一第二最佳匹配參考光譜之一第二索引值以產生一序列第二索引值。第一函數可擬合該序列第一索引值,且第二函數可擬合該序列第二索引值。該第一函數及該第二函數可為線性函數。判定該第一適合度可包括判定該序列第一索引值對該第一函數之適合度,且判定該第二適合度可包括判定該序列第二索引值對該第二函數之適合度。判定該第一適合度可包括判定該序列第一索引值與該第一函數之間的差值平方和,且判定該第二適合度可包括判定該序列第二索引值與該第二函數之間的差值平方和。該序列第一索引值可形成一第一索引跡線,且其中該序列第二索引值可形成一第二索引跡線。判定該第一最佳匹配參考光譜是否指示終點可包括判定該第一最佳匹配參考光譜之索引是否為一目標索引。判定該第二最佳匹配參考光譜是否指示終點可包括判定該第二最佳匹配參考光譜之索引是否為一目標索引。可判定對於該第一序列之第一適合度是否比對於該第二序列之第二適合度更佳。來自第一參考光譜庫之複數個參考光譜可表示具有第一厚度之下伏層的基板,且來自第二參考光譜庫之複數個參考光譜可表示具有不同第二厚度之下伏層的基板。判定一第一最佳匹配參考光譜可包括判定來自第一參考光譜庫之哪個參考光譜具有與現時光譜之最小差,且判定第二最佳匹配參考光譜可包括判定來自第二參考光譜庫之哪個參考光譜具有與現時光譜之最小差。Implementation of either of these two methods can include one or more of the following features. Comparing the current spectrum with a plurality of reference spectra from a second reference spectral library and determining a second best matching reference spectrum to generate a second sequence of second best matching reference spectra, and determining the second a second fitness of the sequence, and the endpoint may be determined based on the first sequence, the second sequence, the first fitness, and the second fitness. Determining the polishing end point can include determining whether the first best matching reference spectrum indicates an end point, and if so, determining whether the first fitness level is better than the second fitness level, and if so, terminating the end point. Determining the polishing end point can include determining whether the second best matching reference spectrum indicates an end point, and if so, determining whether the second best fit is better than the first fitness level, and if so, terminating the end point. Determining a first index value for each of the first best matching reference spectra to generate a sequence of first index values, and determining the second fitness level can include determining one of each of the second best matching reference spectra The two index values are used to generate a sequence of second index values. The first function can fit the first index value of the sequence, and the second function can fit the second index value of the sequence. The first function and the second function can be linear functions. Determining the first fitness may include determining a fitness of the first index value of the sequence for the first function, and determining the second fitness may include determining a fitness of the second index value of the sequence for the second function. Determining the first fitness level may include determining a sum of squares of differences between the first index value of the sequence and the first function, and determining the second fitness level may include determining a second index value of the sequence and the second function The sum of the squared differences. The sequence first index value may form a first index trace, and wherein the sequence second index value may form a second index trace. Determining whether the first best matching reference spectrum indicates an end point may include determining whether an index of the first best matching reference spectrum is a target index. Determining whether the second best matching reference spectrum indicates an end point may include determining whether an index of the second best matching reference spectrum is a target index. It may be determined whether the first fitness for the first sequence is better than the second fitness for the second sequence. The plurality of reference spectra from the first reference spectral library may represent a substrate having a volt layer under the first thickness, and the plurality of reference spectra from the second reference spectral library may represent substrates having volt layers under different second thicknesses. Determining a first best matching reference spectrum can include determining which reference spectrum from the first reference spectral library has a minimum difference from the current spectrum, and determining the second best matching reference spectrum can include determining which of the second reference spectral libraries The reference spectrum has the smallest difference from the current spectrum.

大體而言,在本說明書中描述之標的物的另一態樣可體現於一電腦實施之方法中,該電腦實施之方法包括自一基板之一第一區域接收反射光之一第一序列現時光譜。可自該基板之一第二區域接收反射光之一第二序列現時光譜。可比較來自該第一序列現時光譜的每一現時光譜與來自一第一參考光譜庫之複數個參考光譜以產生一第一序列最佳匹配參考光譜。可比較來自該第二序列現時光譜的每一現時光譜與來自一第二參考光譜庫之複數個參考光譜以產生一第二序列最佳匹配參考光譜。該第二參考光譜庫可不同於該第一參考光譜庫。此態樣之其他實施例包括相應系統、裝置及電腦程式產品。In general, another aspect of the subject matter described in this specification can be embodied in a computer implemented method comprising receiving a first sequence of reflected light from a first region of a substrate. spectrum. A second sequence of reflected light may be received from a second region of the substrate. Each of the current spectra from the current spectrum of the first sequence and a plurality of reference spectra from a first reference spectral library can be compared to produce a first sequence of best matching reference spectra. Each current spectrum from the current spectrum of the second sequence can be compared to a plurality of reference spectra from a second reference spectrum library to produce a second sequence of best matching reference spectra. The second reference spectral library can be different from the first reference spectral library. Other embodiments of this aspect include corresponding systems, devices, and computer program products.

此等及其他實施例可視情況包括下列特徵結構中之一或多者。該第一參考光譜庫及該第二參考光譜庫可為預定的。These and other embodiments may include one or more of the following features as appropriate. The first reference spectral library and the second reference spectral library can be predetermined.

在另一態樣中,可操作一確實體現於一電腦可讀媒體中之電腦程式產品以促使一資料處理裝置執行包含以上方法之步驟的操作。In another aspect, a computer program product embodied in a computer readable medium can be operated to cause a data processing device to perform operations comprising the steps of the above methods.

大體而言,在本說明書中描述之標的物的一態樣可體現於一電腦實施之方法中,該電腦實施之方法包括自一基板之一第一區域接收反射光之一第一序列現時光譜。可自該基板之一第二區域接收反射光之一第二序列現時光譜。可比較來自該第一序列現時光譜的每一現時光譜與來自一第一複數個參考光譜庫之一第一複數個參考光譜以產生複數個第一序列最佳匹配參考光譜。可比較來自該第二序列現時光譜的每一現時光譜與來自一第二複數個參考光譜庫之一第二複數個參考光譜以產生複數個第二序列最佳匹配參考光譜。可判定對於該複數個第一序列最佳匹配參考光譜之複數個第一適合度。可判定對於該複數個第二序列最佳匹配參考光譜之複數個第二適合度。此態樣之其他實施例包括相應系統、裝置及電腦程式產品。In general, an aspect of the subject matter described in this specification can be embodied in a computer implemented method that includes receiving a first sequence of reflected light from a first region of a substrate. . A second sequence of reflected light may be received from a second region of the substrate. Each current spectrum from the current spectrum of the first sequence can be compared to a first plurality of reference spectra from a first plurality of reference spectral libraries to produce a plurality of first sequence best matching reference spectra. Each current spectrum from the current spectrum of the second sequence can be compared to a second plurality of reference spectra from a second plurality of reference spectral libraries to produce a plurality of second sequence best matching reference spectra. A plurality of first fitness levels may be determined for the plurality of first sequences to best match the reference spectrum. A plurality of second fitness levels may be determined for the plurality of second sequences to best match the reference spectrum. Other embodiments of this aspect include corresponding systems, devices, and computer program products.

此等及其他實施例可視情況包括下列特徵結構中之一或多者。某些第一複數個參考光譜庫與第二複數個參考光譜庫可相同。所有第一複數個參考光譜庫與第二複數個參考光譜庫可相同。無一第一複數個參考光譜庫與第二複數個參考光譜庫可相同。These and other embodiments may include one or more of the following features as appropriate. Some of the first plurality of reference spectral libraries may be identical to the second plurality of reference spectral libraries. All of the first plurality of reference spectral libraries are identical to the second plurality of reference spectral libraries. None of the first plurality of reference spectral libraries may be identical to the second plurality of reference spectral libraries.

產生複數個第一序列最佳匹配參考光譜可包括比較來自第一序列現時光譜的每一現時光譜與來自第一參考光譜庫之複數個參考光譜及判定一第一中間適合度;比較來自第一序列現時光譜的每一現時光譜與來自第二參考光譜庫之複數個參考光譜及判定一第二中間適合度;比較該第一中間適合度與該第二中間適合度;基於該第一中間適合度與該第二中間適合度之比較而第一選擇第一參考光譜庫或第二參考光譜庫中之一者;及基於該第一選擇判定一第一序列最佳匹配參考光譜。Generating a plurality of first sequence best matching reference spectra may include comparing each of the current spectra from the current spectrum of the first sequence with a plurality of reference spectra from the first reference spectral library and determining a first intermediate fitness; comparing from the first Comparing each current spectrum of the current spectrum of the sequence with a plurality of reference spectra from the second reference spectrum library and determining a second intermediate fitness; comparing the first intermediate fitness with the second intermediate fitness; based on the first intermediate fit First selecting one of the first reference spectral library or the second reference spectral library by comparing the second intermediate fitness; and determining a first sequence best matching reference spectrum based on the first selection.

產生複數個第二序列最佳匹配參考光譜可包括比較來自第二序列現時光譜的每一現時光譜與來自第一參考光譜庫之複數個參考光譜及判定一第三中間適合度;比較來自第二序列現時光譜的每一現時光譜與來自第二參考光譜庫之複數個參考光譜及判定一第四中間適合度;比較該第三中間適合度與該第四中間適合度;基於該第三中間適合度與該第四中間適合度之比較而第二選擇第一參考光譜庫或第二參考光譜庫中之一者;及基於該第二選擇判定一第二序列最佳匹配參考光譜。Generating a plurality of second sequence best matching reference spectra can include comparing each current spectrum from the current spectrum of the second sequence to a plurality of reference spectra from the first reference spectral library and determining a third intermediate fitness; comparing from the second Comparing each current spectrum of the current spectrum of the sequence with a plurality of reference spectra from the second reference spectrum library and determining a fourth intermediate fitness; comparing the third intermediate fitness with the fourth intermediate fitness; based on the third intermediate fit Selecting one of the first reference spectral library or the second reference spectral library by a second comparison with the fourth intermediate fitness; and determining a second sequence best matching reference spectrum based on the second selection.

可在研磨之預定週期內判定該第一選擇及該第二選擇。研磨之預定週期可包括研磨之最初二十秒。該方法可進一步包括基於第一序列最佳匹配參考光譜及相應第一適合度判定第一區域之第一研磨終點;及基於第二序列最佳匹配參考光譜及相應第二適合度判定第二區域之第二研磨終點。The first selection and the second selection may be determined within a predetermined period of grinding. The predetermined period of grinding may include the first twenty seconds of grinding. The method can further include determining a first polishing endpoint of the first region based on the first sequence best matching reference spectrum and a corresponding first fitness; and determining the second region based on the second sequence best matching reference spectrum and the corresponding second fitness The second grinding end point.

如本說明書中所使用,術語「基板」可包括(例如)產物基板(例如,其可包括多個記憶體或處理器晶粒)、測試基板、裸基板及閘控基板。該基板可處於積體電路製造之各種階段,例如,該基板可為裸晶圓,或其可包括一或多個經沈積及/或經圖案化之層。術語「基板」可包括圓盤及矩形薄片。As used in this specification, the term "substrate" can include, for example, a product substrate (eg, which can include multiple memory or processor dies), a test substrate, a bare substrate, and a gated substrate. The substrate can be at various stages of integrated circuit fabrication, for example, the substrate can be a bare wafer, or it can include one or more deposited and/or patterned layers. The term "substrate" can include discs and rectangular sheets.

本發明之實施例的可能優勢可包括下列內容。終點偵測系統可對基板或下伏層或圖案中基板之區域之間的變化較不敏感,且因此可改良用以偵測對於基板或對於基板之每一區域之所要研磨終點的終點系統之可靠性。因此,可改良晶圓間及晶圓內厚度均勻性。Possible advantages of embodiments of the invention may include the following. The endpoint detection system can be less sensitive to changes between the substrate or the underlying layer or regions of the substrate in the pattern, and thus can improve the endpoint system for detecting the desired endpoint of the substrate for each substrate or for each region of the substrate. reliability. Therefore, the inter-wafer and in-wafer thickness uniformity can be improved.

在隨附圖式及以下實施方式中陳述本發明之一或多個實施例的細節。本發明之其他特徵結構、態樣及優勢將自實施方式、圖式及申請專利範圍變得顯而易見。The details of one or more embodiments of the invention are set forth in the drawings and the claims Other features, aspects, and advantages of the invention will be apparent from the embodiments, drawings and claims.

在研磨期間,具有不同圖案及不同下伏層厚度之基板可通過研磨裝置。若正使用光譜監控,則此等變化可導致來自光譜庫之匹配光譜對量測光譜之不可靠識別。During polishing, substrates having different patterns and different underlying layer thicknesses may pass through the polishing apparatus. If spectral monitoring is being used, these changes can result in unreliable identification of the measured spectra from the spectral library to the measured spectra.

為了補償此舉,可使用多個庫,其中不同庫表示不同圖案及不同下伏層厚度。接著,比較一序列量測光譜與來自該多個庫之參考光譜,且可識別提供對該序列之最佳適合的庫,且該最佳適合庫可用於研磨速率或終點判定。To compensate for this, multiple libraries can be used, with different libraries representing different patterns and different underlying layer thicknesses. Next, a sequence of measured spectra is compared to reference spectra from the plurality of banks, and a library is provided that provides the best fit for the sequence, and the best fit library can be used for polishing rate or endpoint determination.

另外,基板,特別是元件基板可具有具不同特徵(例如,不同特徵結構密度或下伏層厚度)之不同區域。因此,在研磨期間原位執行之光譜監控期間,一些區域之量測光譜可能並非可靠地與基於來自其他區域之資料建立的參考光譜匹配。Additionally, the substrate, particularly the element substrate, can have different regions with different features (eg, different feature density or underlying layer thickness). Thus, during spectral monitoring performed in-situ during milling, the metrology spectra of some regions may not be reliably matched to reference spectra established based on data from other regions.

可藉由使用表示基板內之不同區域的多個庫來解決此問題。可對於基板之複數個區域中的每一者量測反射光之一序列現時光譜,且可比較不同區域之來自該等序列之光譜與來自不同光譜庫之參考光譜以產生可用於終點判定之最佳匹配參考光譜。This problem can be solved by using multiple banks representing different regions within the substrate. A sequence of reflected light sequences can be measured for each of a plurality of regions of the substrate, and spectra from the sequences and reference spectra from different spectral libraries can be compared for different regions to produce the most useful endpoint determination Good match reference spectrum.

參看第1圖,一基板10可包括一晶圓12、一將經受研磨之最外層14及在最外層14與晶圓12之間的一或多個下伏層16,下伏層16中之一些通常經圖案化。舉例而言,最外層14及一緊接相鄰下伏層16可皆為介電質,例如,最外層14可為氧化物且緊接相鄰下伏層16可為氮化物。其他層(諸如其他導電層及介電層)可形成於該緊接相鄰下伏層與該基板之間。Referring to FIG. 1, a substrate 10 can include a wafer 12, an outermost layer 14 to be subjected to grinding, and one or more underlying layers 16 between the outermost layer 14 and the wafer 12, in the underlying layer 16. Some are usually patterned. For example, the outermost layer 14 and a immediately adjacent underlying layer 16 can both be dielectric. For example, the outermost layer 14 can be an oxide and the adjacent underlying layer 16 can be a nitride. Other layers, such as other conductive layers and dielectric layers, may be formed between the immediately adjacent underlying layer and the substrate.

在化學機械研磨期間光譜終點偵測,特定言之最外層14與下伏層16皆為介電質之情況下之光譜終點偵測的一個潛在問題為下伏層之厚度可自不同基板或基板上之不同區域而變化。一基板可具有多個區域,諸如一中心區域、一中間區域及一邊緣區域。舉例而言,在一300mm晶圓上,中心區域可自中心延伸至50mm之半徑,中間區域可自50mm之半徑延伸至約100mm且邊緣可自約100mm延伸至約150mm。在一些實施例中,基板具有比所提及之三個區域更多或更少的區域。A potential problem in the detection of spectral endpoints during chemical mechanical polishing, in particular where the outermost layer 14 and the underlying layer 16 are both dielectric, is that the thickness of the underlying layer can be from different substrates or substrates. Change in different areas. A substrate may have a plurality of regions, such as a central region, an intermediate region, and an edge region. For example, on a 300 mm wafer, the central region can extend from the center to a radius of 50 mm, the intermediate region can extend from a radius of 50 mm to about 100 mm and the edge can extend from about 100 mm to about 150 mm. In some embodiments, the substrate has more or fewer regions than the three regions mentioned.

因此,最外層具有同一厚度之基板(或基板上之區域)可實際上視下伏層而定反射不同光譜。因此,例如,若下伏層具有不同厚度,則用以觸發一些基板(或基板之區域)之研磨終點的目標光譜可能對其他基板(或基板之區域)並不適當地起作用。然而,可能藉由比較在研磨期間獲得之光譜與多個光譜來補償此效應,其中該多個光譜表示下伏層之變化。Thus, a substrate having the same thickness on the outermost layer (or a region on the substrate) can actually reflect different spectra depending on the underlying layer. Thus, for example, if the underlying layers have different thicknesses, the target spectrum used to trigger the polishing endpoints of some of the substrates (or regions of the substrate) may not function properly for other substrates (or regions of the substrate). However, it is possible to compensate for this effect by comparing the spectrum obtained during grinding with a plurality of spectra representing changes in the underlying layer.

歸因於除下伏層厚度以外之變化,諸如經受研磨之最外層之起始厚度的變化、在研磨期間最外層之厚度的變化(例如,歸因於每一區域中之不同研磨速率)、環境之光學性質的變化、下伏層之圖案(例如,線寬(例如,金屬或多晶矽線寬))的變化,或層之組成的變化,變化亦可固有地存在於使用一基板相對於另一基板或該基板上之一區域相對於另一區域所判定的參考光譜之間。然而,同樣可能藉由比較在研磨期間獲得之光譜與多個光譜來補償此效應,其中該多個光譜表示基板之間的其他變化。Due to changes other than the thickness of the underlying layer, such as a change in the initial thickness of the outermost layer subjected to grinding, a change in the thickness of the outermost layer during grinding (eg, due to different polishing rates in each region), Variations in the optical properties of the environment, changes in the pattern of the underlying layer (eg, line width (eg, metal or polysilicon line width)), or changes in the composition of the layer, may also inherently exist in the use of a substrate relative to another A substrate or a region of the substrate is between the reference spectra determined relative to the other region. However, it is equally possible to compensate for this effect by comparing the spectrum obtained during grinding with a plurality of spectra, which represent other variations between the substrates.

另外,可能使用多個參考光譜庫來補償變化。在每一庫內為表示具有最外層之厚度變化但具有其他相似特徵(例如,相似下伏層厚度)之基板(或區域)的多個參考光譜。在庫之間,可表示其他變化(諸如下伏層之厚度的變化),例如,不同庫包括表示具有不同下伏層厚度之基板(或區域)的參考光譜。In addition, multiple reference spectral libraries may be used to compensate for variations. Within each bank are a plurality of reference spectra representing a substrate (or region) having a thickness variation of the outermost layer but having other similar features (eg, similar underlying layer thickness). Between the banks, other variations (such as variations in the thickness of the underlying layer) may be indicated, for example, different libraries include reference spectra representing substrates (or regions) having different underlying layer thicknesses.

第2圖為一圖示一可操作以一研磨基板10之研磨裝置20之實例的橫截面圖。該研磨裝置20包括一可旋轉圓盤形狀平臺24,一研磨墊30位於平臺24上。該平臺可操作以環繞一軸25旋轉。舉例而言,一馬達可轉動一驅動軸22以使平臺24旋轉。2 is a cross-sectional view showing an example of a polishing apparatus 20 operable to polish a substrate 10. The polishing apparatus 20 includes a rotatable disc-shaped platform 24 on which a polishing pad 30 is located. The platform is operable to rotate about an axis 25. For example, a motor can rotate a drive shaft 22 to rotate the platform 24.

藉由包括一穿孔(亦即,穿過研磨墊之孔)或一固體視窗來提供穿過該墊之一光學入口36。儘管在一些實施例中,該固體視窗可支撐於平臺24上且突出至該研磨墊中之一穿孔中,但可將該固體視窗緊固至該研磨墊。研磨墊30通常置放於平臺24上以使得該穿孔或視窗覆蓋在位於平臺24之一凹槽26中的一光學頭53上方。因此,該光學頭53具有穿過該穿孔或視窗至一正研磨之基板的光學入口。下文進一步描述該光學頭。An optical inlet 36 is provided through one of the pads by including a perforation (i.e., through a hole in the polishing pad) or a solid window. Although in some embodiments the solid window can be supported on the platform 24 and protrude into one of the perforations in the polishing pad, the solid window can be secured to the polishing pad. The polishing pad 30 is typically placed on the platform 24 such that the perforation or window covers an optical head 53 located in a recess 26 in the platform 24. Thus, the optical head 53 has an optical entrance through the perforation or window to a substrate being ground. The optical head is further described below.

研磨裝置20包括一組合漿料/漂洗臂39。在研磨期間,可操作臂39以分配研磨液體38(諸如漿料)。或者,該研磨裝置包括可操作以將漿料分配至研磨墊30上之一注漿口。Grinding device 20 includes a combined slurry/rinsing arm 39. During grinding, the arm 39 can be operated to dispense a grinding fluid 38, such as a slurry. Alternatively, the grinding apparatus includes a grouting port operable to dispense the slurry onto the polishing pad 30.

研磨裝置20包括一可操作以固定基板10抵靠研磨墊30之承載頭70。承載頭70自一支撐結構72(例如,旋轉料架)懸掛下來,且由一承載驅動軸74連接至一承載頭旋轉馬達76,以使得該承載頭可環繞一軸71旋轉。另外,承載頭70可在一形成於支撐結構72中之徑向槽中橫向擺動(oscillate)。在操作中,使該平臺環繞其中心軸25旋轉,且使該承載頭環繞其中心軸71旋轉且橫跨該研磨墊之頂表面橫向位移。The polishing apparatus 20 includes a carrier head 70 that is operable to secure the substrate 10 against the polishing pad 30. The carrier head 70 is suspended from a support structure 72 (e.g., a rotating rack) and coupled to a carrier head rotation motor 76 by a carrier drive shaft 74 such that the carrier head can rotate about a shaft 71. Additionally, the carrier head 70 can be oscillated laterally in a radial slot formed in the support structure 72. In operation, the platform is rotated about its central axis 25 and the carrier is rotated about its central axis 71 and laterally displaced across the top surface of the polishing pad.

如下文所論述,該研磨裝置亦包括一光學監控系統,其可用以判定研磨終點,或是否調整研磨速率(或研磨速率之調整)。該光學監控系統包括一光源51及一光偵測器52。光自該光源51穿過研磨墊30中之光學入口36、撞擊且自基板10經由光學入口36反射回來,且行進至光偵測器52。As discussed below, the polishing apparatus also includes an optical monitoring system that can be used to determine the end of the grind, or whether to adjust the grind rate (or the adjustment of the grind rate). The optical monitoring system includes a light source 51 and a light detector 52. Light passes from the source 51 through the optical inlet 36 in the polishing pad 30, impinges and is reflected back from the substrate 10 via the optical inlet 36 and travels to the photodetector 52.

一分叉光學電纜54可用以將光自光源51傳送至光學入口36且自光學入口36傳回至光偵測器52。該分叉光學電纜54可包括一「幹線」55及兩個「分支」56及58。A bifurcated optical cable 54 can be used to transfer light from the source 51 to the optical inlet 36 and back to the photodetector 52 from the optical inlet 36. The bifurcated optical cable 54 can include a "trunk" 55 and two "branches" 56 and 58.

如上所述,平臺24包括一凹槽26,光學頭53位於凹槽26中。光學頭53固定分叉光學電纜54之幹線55之一端,該分叉光學電纜54經組態以將光輸送至正研磨之基板表面且自該基板表面輸送光。光學頭53可包括覆蓋在分叉光學電纜54之該端上方的一或多個透鏡或視窗。或者,光學頭53可僅固定鄰近研磨墊中之固體視窗之幹線55的端。As mentioned above, the platform 24 includes a recess 26 in which the optical head 53 is located. The optical head 53 holds one end of the mains 55 of the bifurcated optical cable 54, which is configured to deliver light to and from the surface of the substrate being polished. The optical head 53 can include one or more lenses or windows that overlie the end of the bifurcated optical cable 54. Alternatively, the optical head 53 can only secure the end of the trunk 55 adjacent the solid window in the polishing pad.

該平臺包括一可移除之原位監控模組50。該原位監控模組50可包括下列元件中之一或多者:光源51、光偵測器52及用於將信號發送至光偵測器52且自光源51接收信號之電路。舉例而言,偵測器52之輸出可為穿過驅動軸22中之一旋轉耦合器(例如,一滑環)至光學監控系統之一控制器60(諸如一電腦)的數位電子信號。類似地,可回應於自該控制器穿過該旋轉耦合器至模組50之數位電子信號中之控制指令而接通或斷開光源。The platform includes a removable in-situ monitoring module 50. The home position monitoring module 50 can include one or more of the following components: a light source 51, a light detector 52, and circuitry for transmitting signals to and receiving signals from the light source 51. For example, the output of the detector 52 can be a digital electronic signal that passes through one of the rotational shaft couplers (eg, a slip ring) of the drive shaft 22 to a controller 60 (such as a computer) of the optical monitoring system. Similarly, the light source can be turned "on" or "off" in response to a control command from the controller through the rotary coupler to the digital electronic signal of module 50.

該原位監控模組亦可固定分叉光學電纜54之分支部分56及58的各別端。可操作該光源以傳送光,該光得以經由分支56輸送且離開位於光學頭53中之幹線55之端,且撞擊於正研磨之基板上。在位於光學頭53中之幹線55之端處接收自基板反射之光且經由分支58將其輸送至光偵測器52。The in-situ monitoring module can also secure the respective ends of the branch portions 56 and 58 of the bifurcated optical cable 54. The light source is operable to transmit light that is conveyed via the branches 56 and exits the end of the mains 55 located in the optical head 53 and impinges on the substrate being ground. Light reflected from the substrate is received at the end of the main line 55 in the optical head 53 and delivered to the photodetector 52 via the branch 58.

光源51可操作以發射白光。在一實施例中,所發射之白光包括具有200-800奈米之波長的光。適合光源為氙燈或汞氙燈。Light source 51 is operable to emit white light. In an embodiment, the emitted white light comprises light having a wavelength of from 200 to 800 nanometers. Suitable light source for xenon or mercury xenon lamps.

光偵測器52可為光譜儀。光譜儀基本上為用於在電磁波譜之一部分上量測光強度之光學儀器。適合光譜儀為光柵光譜儀。光譜儀之典型輸出為以波長(或頻率)函數之光強度。The photodetector 52 can be a spectrometer. A spectrometer is basically an optical instrument for measuring the intensity of light on a portion of an electromagnetic spectrum. Suitable for the spectrometer as a grating spectrometer. A typical output of a spectrometer is the intensity of light as a function of wavelength (or frequency).

光源51及光偵測器52連接至一可操作以控制其操作及接收其信號之計算元件(例如,控制器60)。該計算元件可包括一位於研磨裝置附近之微處理器,例如,個人電腦。就控制而論,該計算元件可(例如)使光源51之啟動與平臺24之旋轉同步。Light source 51 and photodetector 52 are coupled to a computing component (e.g., controller 60) that is operable to control its operation and receive its signals. The computing component can include a microprocessor located adjacent to the polishing device, such as a personal computer. In terms of control, the computing component can, for example, synchronize the activation of light source 51 with the rotation of platform 24.

如第3圖中所示,當平臺旋轉時,電腦可促使光源51剛好在基板10越過原位監控模組之前開始且剛好在基板10越過原位監控模組之後結束發射一系列閃光(所描繪之點301-311中的每一者表示來自該原位監控模組之光撞擊且反射出所在之位置)。或者,電腦可促使光源51剛好在基板10越過原位監控模組之前開始且剛好在基板10越過原位監控模組之後結束連續發射光。在任一狀況下,可在取樣週期期間整合來自偵測器之信號以在取樣頻率下產生光譜量測。該取樣頻率可為約3至100毫秒。儘管未圖示,但每次基板10越過監控模組時,基板與監控模組之對準可與先前越過中不同。經由平臺之一個旋轉,自基板上之不同半徑獲得光譜。亦即,自較接近於基板之中心之位置且一些較接近於邊緣之位置獲得一些光譜。另外,經由平臺之多個旋轉,可隨時間而獲得一序列光譜。As shown in FIG. 3, when the platform is rotated, the computer can cause the light source 51 to start just before the substrate 10 passes over the home monitoring module and end up emitting a series of flashes just after the substrate 10 has passed the home monitoring module (depicted Each of the points 301-311 represents the location of the light from the in-situ monitoring module that is struck and reflected. Alternatively, the computer may cause the light source 51 to begin just before the substrate 10 passes over the home monitoring module and end the continuous emission of light just after the substrate 10 has passed the home monitoring module. In either case, the signal from the detector can be integrated during the sampling period to produce a spectral measurement at the sampling frequency. The sampling frequency can be from about 3 to 100 milliseconds. Although not shown, each time the substrate 10 passes over the monitoring module, the alignment of the substrate with the monitoring module can be different from the previous one. The spectra are obtained from different radii on the substrate via one rotation of the platform. That is, some spectra are obtained from a position closer to the center of the substrate and some closer to the edge. In addition, a sequence of spectra can be obtained over time via multiple rotations of the platform.

在操作中,該計算器件可接收(例如)載運資訊之信號,該資訊描述對於光源之特定閃光或偵測器之時框由光偵測器52接收之光的光譜。因此,此光譜為在研磨期間原位量測之光譜。In operation, the computing device can receive, for example, a signal carrying information describing the spectrum of light received by the photodetector 52 for a particular flash or detector of the light source. Therefore, this spectrum is the spectrum measured in situ during grinding.

不限於任何特定理論,歸因於最外層之厚度的變化,自基板10反射之光的光譜隨研磨進程進展,因而產生一序列隨時間變化之光譜。此外,特定光譜由特定層堆疊厚度呈現。Without being limited to any particular theory, due to variations in the thickness of the outermost layer, the spectrum of light reflected from substrate 10 progresses as the milling progresses, thereby producing a sequence of spectra that change over time. In addition, a particular spectrum is presented by a particular layer stack thickness.

該計算元件可處理信號以判定研磨步驟之終點。特定言之,該計算元件可基於量測光譜執行邏輯判定何時已到達終點。The computing component can process the signal to determine the end of the grinding step. In particular, the computing component can perform a logical determination based on the measurement spectrum when the end point has been reached.

簡言之,該計算元件可比較量測光譜與多個參考光譜,且可使用比較結果來判定何時已到達終點。In short, the computing component can compare the measured spectrum to a plurality of reference spectra and can use the comparison to determine when the endpoint has been reached.

如本文中所使用,參考光譜為在研磨基板之前產生的預定光譜。參考光譜可具有與基板性質(諸如最外層之厚度)之值的預定關聯(亦即,在研磨操作之前限定)。其他或另外之情況,參考光譜可具有與表示研磨製程中之時間之值的預定關聯,在假定實際研磨速率跟隨預期研磨速率之情況下,預期該光譜在該時間下出現。As used herein, a reference spectrum is a predetermined spectrum that is produced prior to polishing a substrate. The reference spectrum can have a predetermined correlation with the value of the substrate properties, such as the thickness of the outermost layer (ie, defined prior to the grinding operation). In other or additional instances, the reference spectrum may have a predetermined association with a value indicative of the time in the polishing process, which is expected to occur at this time assuming the actual polishing rate follows the expected polishing rate.

可以經驗產生參考光譜,例如,藉由量測來自具有已知層厚度之測試基板的光譜,或根據理論產生參考光譜。舉例而言,為了判定參考光譜,可在測量台處預研磨量測具有與產物基板相同圖案之「配置」基板的光譜。亦可用同一測量台或不同測量台預研磨量測基板性質(例如,最外層之厚度)。接著,在收集光譜時研磨該配置基板。對於每一光譜,記錄表示研磨製程中收集光譜所在之時間的值。舉例而言,該值可為消逝時間,或平臺旋轉之數目。可過度研磨基板(亦即,研磨超過所要厚度),以使得可在達成目標厚度時獲得自基板反射之光的光譜。接著,可在測量台處後研磨量測該配置基板之光譜及性質(例如,最外層之厚度)。The reference spectrum can be empirically generated, for example, by measuring the spectrum from a test substrate having a known layer thickness, or by theoretically generating a reference spectrum. For example, to determine the reference spectrum, the spectrum of the "configuration" substrate having the same pattern as the product substrate can be pre-ground at the measurement station. The substrate properties (eg, the thickness of the outermost layer) can also be measured by pre-grinding the same measurement table or different measurement tables. Next, the placement substrate is polished while collecting the spectrum. For each spectrum, a value is recorded indicating the time at which the spectrum was collected during the polishing process. For example, the value can be an elapsed time, or the number of platform rotations. The substrate can be overgrinded (i.e., ground beyond the desired thickness) such that the spectrum of light reflected from the substrate can be obtained when the target thickness is achieved. Next, the spectrum and properties of the configuration substrate (eg, the thickness of the outermost layer) can be measured by post-grinding at the measurement station.

視情況可自研磨系統週期性地移除配置基板,且在返回到研磨之前,在測量台處量測其性質及/或光譜。亦可記錄表示研磨製程中在測量台處量測光譜所在之時間的值。The configuration substrate can be periodically removed from the grinding system as appropriate and its properties and/or spectra measured at the measurement station prior to returning to grinding. A value indicating the time at which the spectrum is measured at the measuring station in the polishing process can also be recorded.

可將參考光譜儲存於庫中。該庫中之參考光譜表示具有多種不同外層厚度的基板。The reference spectrum can be stored in a library. The reference spectrum in this library represents a substrate having a plurality of different outer layer thicknesses.

可自在除最外層之厚度以外之特徵上不同(例如,在下伏層厚度、下伏層圖案或外層或下伏層組成上不同)的不同配置基板建立多個庫。Multiple banks may be built from different configuration substrates that differ in features other than the thickness of the outermost layer (eg, in the underlying layer thickness, the underlying layer pattern, or the outer or underlying layer composition).

經量測之厚度及經收集之光譜用以自經收集之光譜之中選擇一或多個經判定以在基板具有相關厚度時由基板呈現之光譜。特定言之,可使用經量測之預研磨膜厚度及後研磨基板厚度(或在測量台處量測之其他厚度)執行線性內插以判定在達成目標厚度時所呈現之時間及相應光譜。將經判定以在達成目標厚度時所呈現之該或該等光譜指定為該或該等目標光譜。The measured thickness and the collected spectrum are used to select one or more spectra from the collected spectra that are determined to be present by the substrate when the substrate has an associated thickness. In particular, linear interpolation can be performed using the measured pre-ground film thickness and post-grinding substrate thickness (or other thickness measured at the measurement station) to determine the time and corresponding spectrum exhibited when the target thickness is achieved. The or the spectra that are determined to be present when the target thickness is achieved are designated as the or the target spectra.

另外,假定均勻研磨速率,則可基於收集光譜所在之時間及經量測之光譜之時間輸入,使用經量測之預研磨膜厚度與後研磨基板厚度(或在測量台處量測之其他厚度)之間的線性內插來對於原位收集之每一光譜計算最外層之厚度。歸因於初始平坦化,自研磨操作之開始至結束,該研磨速率可能並非均勻的;在此狀況下,若瞭解研磨速率之進展,則仍可計算厚度。另外,可假定對於研磨結束,該速率將很可能為均勻的。In addition, assuming a uniform polishing rate, the measured pre-polished film thickness and post-grinding substrate thickness (or other thickness measured at the measuring station) can be used based on the time at which the spectrum is collected and the time input of the measured spectrum. Linear interpolation between ) calculates the thickness of the outermost layer for each spectrum collected in situ. Due to the initial planarization, the polishing rate may not be uniform from the beginning to the end of the grinding operation; in this case, if the progress of the polishing rate is known, the thickness can still be calculated. In addition, it can be assumed that the rate will likely be uniform for the end of the grinding.

除以經驗為基礎地加以判定之外,可(例如)使用基板層之光學模型,根據理論計算一些或全部參考光譜。舉例而言,且光學模型可用以對於給定外層厚度D計算光譜。可(例如)藉由假定外層係以均勻研磨速率移除來計算表示研磨製程中將收集光譜所在之時間的值。舉例而言,可藉由假定起始厚度D0及均勻研磨速率R來簡單地計算特定光譜之時間Ts(Ts=(D0-D)/R)。如另一實例,可執行基於用於光學模型之厚度D的預研磨厚度D1與後研磨厚度D2(或在測量台處量測之其他厚度)之量測時間T1、T2之間的線性內插(Ts=T2-T1*(D1-D)/(D1-D2))。In addition to being judged on an empirical basis, some or all of the reference spectra may be calculated theoretically, for example, using an optical model of the substrate layer. For example, and an optical model can be used to calculate the spectrum for a given outer layer thickness D. The value indicative of the time at which the spectrum will be collected in the polishing process can be calculated, for example, by assuming that the outer layer is removed at a uniform polishing rate. For example, the time Ts (Ts = (D0 - D) / R) of a specific spectrum can be simply calculated by assuming the initial thickness D0 and the uniform polishing rate R. As another example, linear interpolation between the measured time T1, T2 based on the pre-polished thickness D1 and the post-grinding thickness D2 (or other thickness measured at the measuring station) for the thickness D of the optical model can be performed. (Ts=T2-T1*(D1-D)/(D1-D2)).

如本文中所使用,參考光譜庫為表示共用共有性質(除外層厚度以外)之基板的參考光譜之集合。然而,在單一庫中共用之共有性質可在多個參考光譜庫上變化。舉例而言,兩個不同庫可包括表示具有兩個不同下伏層厚度之基板的參考光譜。As used herein, a reference spectral library is a collection of reference spectra representing a substrate that shares common properties (other than the thickness of the layer). However, the common properties shared in a single library can vary across multiple reference spectral libraries. For example, two different banks may include a reference spectrum representing a substrate having two different underlying layer thicknesses.

如上文所論述,可藉由研磨多個具有不同基板性質(例如,下伏層厚度或層組成)之「配置」基板及收集光譜來產生不同庫之光譜;來自一配置基板之光譜可提供一第一庫且來自另一具有不同下伏層厚度之基板之光譜可提供一第二庫。其他或另外情況下,可根據理論計算不同庫之參考光譜,例如,可使用具有具第一厚度之下伏層的光學模型計算第一庫之光譜,且可使用具有具一個不同厚度之下伏層的光學模型計算第二庫之光譜。As discussed above, spectra of different banks can be generated by grinding a plurality of "configuration" substrates having different substrate properties (eg, underlying layer thickness or layer composition) and collecting spectra; spectra from a configuration substrate can provide a The first library and the spectrum from another substrate having a different underlying layer thickness provides a second bank. In other or additional cases, the reference spectra of the different banks may be calculated according to theory. For example, the optical spectrum of the first library may be used to calculate the spectrum of the first library, and may be used with a different thickness. The optical model of the layer calculates the spectrum of the second library.

在一些實施例中,將每一參考光譜指派一索引值。此索引可為表示研磨製程中預期觀測到參考光譜所在之時間的值。可將光譜編索引以使得特定庫中之每一光譜具有唯一索引值。可實施編索引以使得按量測光譜所用之次序排序索引值。可選擇索引值以隨研磨進程單調地改變,例如,增加或減小。特定言之,可選擇參考光譜之索引值以使得其形成時間或平臺旋轉之數目的線性函數。舉例而言,索引值可與平臺旋轉之數目成比例。因此,每一索引號可為整數,且該索引號可表示將出現相關聯光譜所在之預期平臺旋轉。In some embodiments, each reference spectrum is assigned an index value. This index can be a value indicating the time at which the reference spectrum is expected to be observed in the polishing process. The spectra can be indexed such that each spectrum in a particular library has a unique index value. Indexing can be performed to rank the index values in the order in which the spectra are measured. The index value can be selected to vary monotonically with the grinding process, for example, increasing or decreasing. In particular, the index value of the reference spectrum can be selected such that it forms a linear function of the number of time or platform rotations. For example, the index value can be proportional to the number of platform rotations. Thus, each index number can be an integer, and the index number can represent the expected platform rotation at which the associated spectrum will occur.

可將參考光譜及其相關聯索引儲存於庫中。該庫可在研磨裝置之計算元件之記憶體中實施。可將目標光譜之索引指定為目標索引。The reference spectrum and its associated index can be stored in a library. The bank can be implemented in the memory of the computing elements of the polishing apparatus. The index of the target spectrum can be specified as the target index.

在研磨期間,對於每一庫可產生一索引跡線。每一索引跡線包括形成該跡線之一序列索引,該序列之每一特定索引與特定量測光譜相關聯。對於給定庫之索引跡線,藉由自對特定量測光譜最精密配合之給定庫選擇參考光譜之索引來產生該序列中之特定索引。During the grinding, an index trace can be generated for each bank. Each index trace includes a sequence index that forms one of the traces, each particular index of the sequence being associated with a particular metrology spectrum. For an index trace of a given library, a particular index in the sequence is generated by selecting an index of the reference spectrum from a given library that most closely matches the particular measurement spectrum.

如第4圖中所示,可根據時間或平臺旋轉測繪對應於每一量測光譜之索引80。例如使用抗差線性(robust line)擬合將已知階數之多項式函數(例如,一階函數(亦即,線))擬合測繪之索引號。在線與目標索引會合之地方界定終點時間或旋轉。舉例而言,將一階函數82擬合第4圖中所示之資料點。As shown in FIG. 4, the index 80 corresponding to each measurement spectrum can be rotated according to time or platform rotation. For example, a polynomial function of known order (eg, a first order function (ie, line)) is fitted to the index number of the survey using a robust line fit. The place where the online and target index meets defines the end time or rotation. For example, the first order function 82 is fitted to the data points shown in FIG.

不限於任何特定理論,一些庫可比其他庫更準確地預測適當終點,因為其更一致地匹配經量測之資料。舉例而言,自表示具有不同下伏層厚度之基板(或基板內之區域)的多個庫當中,與經量測之基板(或基板內之區域)之下伏層厚度最精密匹配的庫應提供最佳匹配。因此,本發明之益處為藉由利用多個參考光譜庫達成之較準確的終點偵測系統。特定言之,不同參考光譜庫可用於基板之每一區域。另外,每一區域可具有多個不同參考光譜庫。Without being limited to any particular theory, some libraries can predict the appropriate endpoint more accurately than other libraries because they more closely match the measured data. For example, among the plurality of banks representing substrates having different underlying layer thicknesses (or regions within the substrate), the library that most closely matches the thickness of the underlying layer of the measured substrate (or region within the substrate) The best match should be provided. Thus, the benefit of the present invention is a more accurate endpoint detection system achieved by utilizing multiple reference spectral libraries. In particular, different reference spectral libraries can be used for each region of the substrate. In addition, each region can have multiple libraries of different reference spectra.

舉例而言,第4圖為圖示一來自一光譜監控系統展示對應於一基板上之一第一區域之良好資料密合之實例索引跡線的示意圖。相較之下,第5圖為圖示一來自一光譜監控系統展示對該基板上之一第二區域之較弱資料密合之實例索引跡線的示意圖。第4圖及第5圖之實例索引跡線表示使用相同參考光譜庫產生之索引跡線。相對地,同第4圖中相關聯抗差線與測繪之索引號相關聯之索引跡線的差值相比,第5圖中測繪之索引號具有與相關聯抗差線更大量的差值。因此,對基板上之不同區域使用不同參考光譜庫可為有利的。For example, Figure 4 is a diagram illustrating an example index trace from a spectral monitoring system showing a good data fit corresponding to a first region on a substrate. In contrast, FIG. 5 is a diagram illustrating an example index trace from a spectral monitoring system showing weaker data adhesion to a second region on the substrate. The example index traces of Figures 4 and 5 represent index traces generated using the same reference spectral library. In contrast, the index number of the mapping in Figure 5 has a larger amount of difference from the associated line of weakness than the difference between the index line associated with the index number of the mapping in Figure 4; . Therefore, it may be advantageous to use different reference spectral libraries for different regions on the substrate.

在一些實施例中,在基板之大於一個徑向位置處獲得光譜。對於每一光譜量測,可判定基板上之徑向位置,且可將光譜量測放入基於其徑向位置之區域(例如,徑向區域)中。如上文所描述,一基板可具有多個區域,諸如中心區域、中間區域及邊緣區域。可諸如藉由使用美國專利第7,097,537號中所描述或美國專利第7,018,271號中所描述之方法來判定獲得光譜之位置,完全將該等專利以引用的方式併入本文中。In some embodiments, the spectra are obtained at more than one radial location of the substrate. For each spectral measurement, the radial position on the substrate can be determined, and the spectral measurements can be placed in a region based on its radial position (eg, a radial region). As described above, a substrate can have a plurality of regions, such as a central region, an intermediate region, and an edge region. The position of the obtained spectrum can be determined, for example, by the method described in U.S. Patent No. 7,097,537, or U.S. Patent No. 7,018,271, the disclosure of which is incorporated herein by reference.

如上文所描述,比較來自每一區域之經量測之光譜(或對於每一區域,來自在橫跨基板之感測器之單掃描獲得之區域內之光譜的平均值)與複數個參考光譜庫中之一或多者中的參考光譜,且自與該光譜庫之比較判定相應索引號。對於每一區域之相應索引號可用以產生一索引跡線,且該索引跡線可用以判定適合度。As described above, the measured spectra from each region (or the average of the spectra from the region obtained from a single scan of the sensor across the substrate for each region) and a plurality of reference spectra are compared A reference spectrum in one or more of the libraries, and a comparison with the spectral library determines the corresponding index number. A corresponding index number for each region can be used to generate an index trace, and the index trace can be used to determine fitness.

第6圖展示用於判定研磨步驟之終點的方法600。研磨來自一批基板之一基板(步驟602),且對於每一平臺旋轉(且對於該基板之每一區域,其中正對於每一區域使用多個庫)執行下列步驟。量測一或多個光譜以獲得對於一現時平臺旋轉之一現時光譜(步驟604)。判定儲存於一第一光譜庫中最佳適合該現時光譜之一第一最佳匹配參考光譜(步驟606)。判定儲存於一第二光譜庫中最佳適合該現時光譜之一第二最佳匹配參考光譜(步驟608)。更大體而言,對於對於該基板及/或區域正使用之每一庫,判定與該現時光譜最佳匹配之參考光譜。判定來自該第一庫之對該現時光譜最佳適合之第一最佳匹配參考光譜的索引(步驟610),且將其添加至與該第一庫相關聯之一第一索引跡線(步驟612)。判定來自該第二庫之對該現時光譜最佳適合之第二最佳匹配參考光譜的索引(步驟614),且將其添加至與該第二庫相關聯之第二索引跡線(步驟616)。更大體而言,對於每一庫,判定每一最佳匹配參考光譜之索引且將其添加至相關聯庫之索引跡線中。使第一線擬合第一索引跡線(步驟620),且使第二線擬合第二索引跡線(步驟622)。更大體而言,對於每一索引跡線,可使一線擬合該索引跡線。該等線可使用抗差線性擬合來擬合。Figure 6 shows a method 600 for determining the end of a grinding step. The substrate from one of the batches of substrates is ground (step 602) and the following steps are performed for each platform rotation (and for each region of the substrate where multiple banks are being used for each region). One or more spectra are measured to obtain a current spectrum for a current platform rotation (step 604). It is determined that a first best matching reference spectrum stored in a first spectral library is best suited to the current spectrum (step 606). It is determined that a second best matching reference spectrum stored in a second spectral library is best suited to the one of the current spectra (step 608). More specifically, for each bank that is being used for the substrate and/or region, a reference spectrum that best matches the current spectrum is determined. Determining an index of the first best matching reference spectrum from the first library that is best suited for the current spectrum (step 610) and adding it to one of the first index traces associated with the first library (step 612). An index from the second library that best fits the second best matching reference spectrum for the current spectrum is determined (step 614) and added to the second index trace associated with the second library (step 616) ). More specifically, for each library, an index of each best matching reference spectrum is determined and added to the index trace of the associated library. The first line is fitted to the first index trace (step 620) and the second line is fitted to the second index trace (step 622). More broadly, for each index trace, a line can be fitted to the index trace. These lines can be fitted using a robust linear fit.

可在第一最佳匹配光譜之索引與目標索引匹配或超過目標索引(步驟624)且與第一光譜庫相關聯之索引跡線具有與第一光譜庫相關聯之抗差線的最佳適合度(步驟626)時,或在第二最佳匹配光譜之索引與目標索引匹配或超過目標索引(步驟624)且與第二光譜庫相關聯之索引跡線具有與第二光譜庫相關聯之抗差線的最佳適合度(步驟626)時稱為終點(步驟630)。更大體而言,可在具有對其相關聯適合線最佳適合之索引跡線與目標索引匹配或超過目標索引時稱為終點。The index of the first best matching spectrum may match or exceed the target index (step 624) and the index trace associated with the first spectral library may have an optimum fit for the line of weakness associated with the first spectral library. Degree (step 626), or the index of the second best matching spectrum matches or exceeds the target index (step 624) and the index trace associated with the second spectral library has an association with the second spectral library The best fit of the line of weakness (step 626) is referred to as the end point (step 630). Larger, it can be referred to as the end point when the index trace that best fits its associated fit line matches or exceeds the target index.

儘管上文論述兩個庫,但此技術可供三個或三個以上庫使用。另外,一些、全部或無一庫可在區域之間共用,例如,用於一區域之一些、全部或無一庫可供另一區域使用。Although the two libraries are discussed above, this technique can be used by three or more libraries. In addition, some, all, or none of the libraries may be shared between regions, for example, some, all, or none of the libraries for one region may be used for another region.

又,並非與目標索引比較索引值本身,而是可比較在當前時間密合線之值與目標索引。亦即,自線性函數計算對於當前時間之值(在此情形下,其無需為整數),且比較此值與目標索引。Also, instead of comparing the index value itself with the target index, the value of the close line and the target index at the current time can be compared. That is, the self-linear function calculates the value for the current time (in this case, it does not need to be an integer) and compares this value with the target index.

使用方法600,例如,可使用不同參考光譜庫來判定基板之不同區域的研磨終點。特定言之,使用產生具有特定區域之最佳適合度之索引跡線的參考光譜庫。在此等及其他實施例中,一些區域可使用同一參考光譜庫,而一些區域可使用不同參考光譜庫。在一些實施例中,可預定(例如,使用者選擇)複數個參考光譜庫之子集以限制用於每一區域之庫的數目。舉例而言,可預定兩個或兩個以上參考庫以供每一區域使用。在一些實施例中,可基於適合度為每一區域識別特定參考光譜庫。舉例而言,在研磨製程期間之預定時段(例如,研磨之最初10-20秒)期間,可基於在預定時段期間產生最佳適合度之參考光譜庫而選擇欲用於每一區域之特定參考光譜庫(例如,用於一區域之最佳庫)。Using method 600, for example, different reference spectral libraries can be used to determine the polishing endpoints for different regions of the substrate. In particular, a reference spectral library that produces index traces with the best fit for a particular region is used. In these and other embodiments, some regions may use the same reference spectral library, while some regions may use different reference spectral libraries. In some embodiments, a subset of the plurality of reference spectral libraries may be predetermined (eg, selected by the user) to limit the number of banks for each region. For example, two or more reference libraries may be predetermined for use in each region. In some embodiments, a particular reference spectral library can be identified for each region based on fitness. For example, during a predetermined period of time during the polishing process (eg, the first 10-20 seconds of grinding), a particular reference to be used for each region may be selected based on a reference spectral library that produces the best fit during the predetermined time period. Spectral library (for example, the best library for a region).

其他實施例為可能的。舉例而言,儘管上文論述兩個庫,但此技術可供三個或三個以上庫使用。如另一實例,一些、全部或無一庫可在區域之間共用,例如,用於一區域之一些、全部或無一庫可供另一區域使用。如又一實例,可預定正好一個參考光譜庫以供每一區域使用,以使得不同參考光譜庫用於每一區域。對於此實施例,並非基於適合度選擇參考庫;反而可簡單地藉由使用不同區域之不同參考庫來改良終點之可靠性。Other embodiments are possible. For example, although two libraries are discussed above, this technique can be used with three or more libraries. As another example, some, all, or none of the libraries may be shared between regions, for example, some, all, or none of the libraries for one region may be used for another region. As yet another example, exactly one reference spectral library can be predetermined for use in each region such that different reference spectral libraries are used for each region. For this embodiment, the reference library is not selected based on fitness; instead, the reliability of the endpoint can be improved simply by using different reference banks of different regions.

判定與光譜庫相關聯之索引跡線是否具有與該庫相關聯之線性函數的最佳適合度可包括(相對地,與相關聯抗差線與另一庫相關聯之索引跡線的差相比),判定相關聯光譜庫之索引跡線是否具有與相關聯抗差線最小量之差,例如,最低標準差、最大相關性或其他變異數量測。在一實施例中,藉由計算索引資料點與線性函數之間的差值平方和來判定適合度;具有最低差值平方和之庫具有最佳適合度。Determining whether the index trace associated with the spectral library has the best fitness for the linear function associated with the library may include (relatively, the difference between the index trace associated with the associated strain line and another library) For example, it is determined whether the index trace of the associated spectral library has a difference from the minimum amount of the associated difference line, for example, the lowest standard deviation, the maximum correlation, or other variation. In one embodiment, the fitness is determined by calculating the sum of the squared differences between the index data points and the linear function; the library with the lowest sum of squares has the best fit.

若索引跡線中之一者到達目標索引但並非為最佳適合,則系統可等待直至該索引跡線為最佳適合,或為最佳適合之該索引跡線達到目標索引。If one of the index traces reaches the target index but is not optimally fit, the system can wait until the index trace is optimally fit, or the index trace reaches the target index as best suited.

儘管上文僅論述兩個庫及兩個索引跡線,但此概念可應用於將提供兩個以上索引跡線之兩個以上庫。另外,不是在該跡線之索引與目標索引匹配時稱為終點,而是可在對於跡線之線密合越過目標索引所計算之時間稱為終點。此外,將可能在終點前(例如,經過約40%至50%或60%之預期研磨時間)拒絕具有最差適合之索引跡線,以便減少處理。Although only two libraries and two index traces are discussed above, this concept can be applied to more than two libraries that will provide more than two index traces. In addition, instead of being referred to as the end point when the index of the trace matches the target index, the time that can be calculated by crossing the target index with respect to the line of the trace is referred to as the end point. In addition, it will be possible to reject the index trace with the worst fit before the end point (eg, after about 40% to 50% or 60% of the expected grinding time) in order to reduce processing.

獲得現時光譜可包括量測反射出正研磨之基板表面之光的至少一個光譜(步驟604)。視情況可量測多個光譜,例如,可自平臺之單旋轉,例如,在點301-311處(第3圖)獲得在基板上之不同半徑處量測之光譜。若量測多個光譜,則可選擇光譜中之一或多者之子集以用於終點偵測演算法中。舉例而言,可選擇在基板中心附近之樣本位置處(例如,在第3圖中所示之點305、306及307處)量測的光譜。視情況處理在現時平臺旋轉期間量測之光譜以增強準確性及/或精確性。Obtaining the current spectrum can include measuring at least one spectrum of light that reflects the surface of the substrate being polished (step 604). Multiple spectra may be measured, as appropriate, for example, from a single rotation of the platform, for example, at points 301-311 (Fig. 3) to obtain spectra measured at different radii on the substrate. If multiple spectra are measured, a subset of one or more of the spectra can be selected for use in the endpoint detection algorithm. For example, the spectra measured at sample locations near the center of the substrate (eg, at points 305, 306, and 307 shown in FIG. 3) can be selected. The spectrum measured during the current platform rotation is treated as appropriate to enhance accuracy and/or accuracy.

判定經選定量測之光譜中之每一者與參考光譜中之每一者之間的差(步驟606或610)可包括將該差計算為在波長之範圍內強度差之和。亦即,Determining the difference between each of the selected measured spectra and each of the reference spectra (step 606 or 610) may include calculating the difference as the sum of the intensity differences over a range of wavelengths. that is,

其中ab 分別為光譜之波長範圍的下限及上限,且I (λ)及I (λ)分別為對於給定波長,現時光譜之強度及參考光譜之強度。或者,可將該差計算為均方誤差,亦即:Wherein a and b are lower and upper limits of the wavelength range of the spectrum, and when the current I ([lambda]) and the reference I ([lambda]) for a given wavelength, respectively, of the current intensity and the spectral intensity of the reference spectrum. Alternatively, the difference can be calculated as a mean square error, ie:

其中對於基板或對於基板之每一區域,存在來自給定平臺旋轉之多個現時光譜,可在現時光譜中之每一者與給定庫之參考光譜中之每一者之間判定最佳匹配。比較每一選定現時光譜與每一參考光譜。例如,假定現時光譜efg 及參考光譜EFG ,可為現時光譜與參考光譜之下列組合中之每一者計算匹配係數:eEeFeGfEfFfGgEgFgG 。無論哪個匹配係數指示最佳匹配(例如,為最小的),則判定參考光譜,且因此判定索引。Wherein for each region of the substrate or for the substrate, there are a plurality of current spectra that are rotated from a given platform, and a best match can be determined between each of the current spectra and each of the reference spectra of a given library. . Each selected current spectrum is compared to each reference spectrum. For example, assuming that the current spectra e , f, and g and the reference spectra E , F, and G , the matching coefficients can be calculated for each of the following combinations of the current spectrum and the reference spectrum: e and E , e and F , e and G , f and E , f and F , f and G , g and E , g and F, and g and G. Regardless of which matching coefficient indicates the best match (eg, is the smallest), the reference spectrum is determined, and thus the index is determined.

判定與光譜庫相關聯之索引跡線是否具有與該光譜庫相關聯之抗差線的最佳適合度(步驟620或624)可包括判定哪個庫具有包含索引跡線之資料點與適合於與光譜庫相關聯之抗差線之間的最小差值平方和。舉例而言,第4圖及第5圖中所表示之資料點與其各別相關聯抗差線之間的最小差值平方和。Determining whether the index trace associated with the spectral library has the best fit for the line of weakness associated with the spectral library (step 620 or 624) can include determining which library has the data point containing the index trace and is suitable for The sum of the squared differences between the lines of resistance associated with the spectral library. For example, the sum of the squared differences between the data points represented in Figures 4 and 5 and their respective associated resistance lines.

在一些實施例中,判定一個區域(諸如中心區域)之預期終點時間。接著在適當情況下調整其他區域內之研磨速率以在與用於選定區域(例如,中心區域)之預期終點時間相同的時間達成其所要終點。可諸如藉由增加或降低承載頭中之相應區域中的壓力來調整研磨速率。在一些承載頭(諸如在美國公開案第2005-0211377號中所描述之承載頭)中,承載頭具有可調整之壓力區域。可假定研磨速率之變化與壓力之變化成正比(例如,簡單Prestonian模型)。另外,可開發用於研磨基板之控制模型,該控制模型考慮平臺或頭旋轉速度之影響、不同頭壓力組合之二級效應、研磨溫度、漿料流量或影響研磨速率之其他參數。In some embodiments, the expected end time of an area, such as a central area, is determined. The grinding rate in the other regions is then adjusted as appropriate to achieve its desired end point at the same time as the expected end time for the selected region (e.g., the central region). The polishing rate can be adjusted, such as by increasing or decreasing the pressure in the corresponding region in the carrier head. In some carrier heads, such as the carrier heads described in U.S. Publication No. 2005-0211377, the carrier head has an adjustable pressure zone. It can be assumed that the change in the polishing rate is proportional to the change in pressure (eg, a simple Prestonian model). Additionally, a control model for grinding the substrate can be developed that takes into account the effects of the plate or head rotational speed, the secondary effects of different head pressure combinations, the grinding temperature, the slurry flow rate, or other parameters that affect the polishing rate.

參看第7圖,若需要特定輪廓(諸如橫跨基板之表面的均勻厚度),則可監控研磨速率之斜率(如由索引號隨時間之變化所指示)且若索引跡線之適合度指示光譜量測可靠(例如,適合度小於預定臨限值),則調整研磨速率。在研磨穩定週期705之後,在中心區域710處、邊緣區域715處及在中間區域720中間獲得光譜。此處,該等區域為圓形或環形區域。每一光譜與其各別索引相關。經由一定數目個平臺旋轉,或隨時間重複此過程,且判定中心區域710、中間區域720及邊緣區域715中之每一者處的研磨速率。該研磨速率由藉由根據旋轉之數目735(x軸),測繪索引730(y軸)獲得之線的斜率指示。若速率中之任一者經計算為比其他速率更快或更慢,則在索引跡線之適合度指示光譜量測可靠之情況下可調整該區域中之速率。此處,該調整係基於中心區域710之終點CE 。對於一些實施例,若研磨速率在可接受範圍內,則無需進行調整。自研磨具有類似研磨參數之類似基板或自使用上文所描述之差分法已知近似研磨終點EDP。在研磨製程期間之第一研磨時間T1 下,中間區域720處之研磨速率降低且邊緣區域處之研磨速率增加。在不調整中間區域720處之研磨速率的情況下,將比基板之其餘區域更快地研磨中間區域,以MA 之過度研磨速率研磨中間區域。在不調整在T1 下邊緣區域715處之研磨速率的情況下,將以Eu 之速率不足研磨邊緣區域715。Referring to Figure 7, if a particular profile is required (such as a uniform thickness across the surface of the substrate), the slope of the polishing rate can be monitored (as indicated by the change in index number over time) and if the index trace fit indicates the spectrum The measurement is reliable (for example, the fitness is less than the predetermined threshold) and the polishing rate is adjusted. After the grinding stabilization period 705, a spectrum is obtained at the central region 710, at the edge region 715, and in the middle of the intermediate region 720. Here, the regions are circular or annular regions. Each spectrum is related to its respective index. This process is repeated via a number of platforms, or repeated over time, and the rate of polishing at each of central region 710, intermediate region 720, and edge region 715 is determined. The polishing rate is indicated by the slope of the line obtained by mapping the index 730 (y-axis) according to the number of rotations 735 (x-axis). If any of the rates is calculated to be faster or slower than the other rates, the rate in the region can be adjusted if the index trace fitness indicates that the spectral measurements are reliable. Here, the adjustment is based on the end point C E of the central region 710. For some embodiments, if the polishing rate is within an acceptable range, no adjustment is needed. A similar grinding end point EDP is known from grinding a similar substrate having similar grinding parameters or from using the differential method described above. T 1 during the polishing process of the first polishing time, the polishing rate of the intermediate region 720 decrease the polishing rate increases and the edge region. Without adjusting the polishing rate at the intermediate region 720, the intermediate region will be ground faster than the rest of the substrate, and the intermediate region will be ground at an excessive polishing rate of M A . Without adjusting the polishing rate of 715 1 T at the edge region, the edge region will be less than the polishing rate of 715 E u.

在研磨製程期間之隨後時間(T2 )下,可在適當情況下再次調整速率。此研磨製程中之目標為在基板具有平整表面或橫跨相對平坦之表面的氧化層時結束研磨。判定用以調整研磨速率之量的一種方法為調整速率以使得中心區域、中間區域及邊緣區域中之每一者的索引在近似研磨終點EDP處相等。因此,在邊緣區域處之研磨速率需要調整,而以與T2 之前相同的速率研磨中心區域及中間區域。若EDP為近似值,則可在每一區域處之索引處於所要位置時,亦即,在每一位置具有同一索引時終止研磨。At a subsequent time (T 2 ) during the grinding process, the rate can be adjusted again as appropriate. The goal in this polishing process is to finish the polishing when the substrate has a flat surface or an oxide layer that spans a relatively flat surface. One method of determining the amount to adjust the polishing rate is to adjust the rate such that the index of each of the center region, the intermediate region, and the edge region is equal at the approximate polishing end point EDP. Therefore, the polishing rate at the edge region needs to be adjusted, and the central region and the intermediate region are ground at the same rate as before T 2 . If the EDP is an approximation, the grinding can be terminated when the index at each region is at the desired position, i.e., at the same index for each location.

在研磨製程期間,較佳僅使研磨速率變化少許次數,諸如四次、三次、兩次或僅一次。可在接近研磨製程之開始、在中間或朝向結束時進行調整。使光譜與索引號相關聯建立在該等區域中之每一者處研磨的線性比較且可簡化判定如何控制研磨製程所必需之計算且排除複雜軟體或處理步驟。During the polishing process, it is preferred to only change the polishing rate a few times, such as four, three, two or only once. Adjustments can be made near the beginning of the grinding process, in the middle or towards the end. Associating the spectrum with the index number establishes a linear comparison of the grinding at each of the regions and simplifies the calculations necessary to determine how to control the polishing process and eliminates complex software or processing steps.

在終點製程期間可應用一方法為限制被搜尋用於匹配光譜之庫的部分。該庫通常包括比在研磨基板時將獲得之光譜更廣範圍的光譜。該更廣範圍說明自較厚起始最外層獲得之光譜及在過度研磨之後獲得之光譜。在基板研磨期間,該庫搜尋限於預定範圍之庫光譜。在一些實施例中,判定正研磨之基板的現時旋轉索引N。可藉由搜尋所有庫光譜來判定N。對於在隨後旋轉期間獲得之光譜,可在N之自由度範圍內搜尋該庫。亦即,若在一個旋轉期間,索引號被認為是N,則在為稍後X旋轉之隨後旋轉期間,其中自由度為Y,將自(N+X)-Y至(N+X)+Y搜尋該範圍。舉例而言,若在基板之第一研磨旋轉下,匹配索引被認為是8且自由度經選擇為5,則對於在第二旋轉期間獲得之光譜,僅檢查對應於索引號9±5之光譜用於匹配。在應用此方法時,可將同一方法獨立地應用於當前正用於終點偵測製程中之所有庫。A method can be applied during the endpoint process to limit the portion of the library that is searched for matching spectra. The library typically includes a broader spectrum of spectra than would be obtained when the substrate was polished. This broader range illustrates the spectrum obtained from the thicker starting outermost layer and the spectrum obtained after overgrinding. The library search is limited to a library spectrum of a predetermined range during substrate polishing. In some embodiments, the current rotation index N of the substrate being ground is determined. N can be determined by searching all library spectra. For spectra obtained during subsequent rotations, the library can be searched for in the range of degrees of freedom of N. That is, if the index number is considered to be N during a rotation, then during the subsequent rotation for a later X rotation, where the degree of freedom is Y, it will be from (N+X)-Y to (N+X)+ Y searches for this range. For example, if the matching index is considered to be 8 and the degree of freedom is selected to be 5 under the first grinding rotation of the substrate, only the spectrum corresponding to the index number 9±5 is checked for the spectrum obtained during the second rotation. Used for matching. When applying this method, the same method can be applied independently to all the libraries currently in use in the endpoint detection process.

本發明之實施例及在本說明書中所描述之所有函數運算可於數位電子電路或電腦軟體、韌體或硬體(包括在本說明書中所揭示之結構構件及其結構等效物)或其組合中實施。本發明之實施例可實施為一或多個電腦程式產品,亦即,確實體現於資訊載體中(例如,機器可讀儲存媒體中)之一或多個電腦程式,以用於由資料加工裝置(例如,可程式化處理器、電腦或多個處理器或電腦)執行或用以控制該資料加工裝置之操作。可以程式設計語言(包括編譯或解譯語言)之任何形式寫入電腦程式(亦稱作程式、軟體、軟體應用程式或程式碼),且可以任何形式佈署電腦程式,包括作為單機程式或作為模組、部件、次常式或適合用於計算環境中之其他單元。電腦程式並非必須對應於檔案。可將程式儲存於保存其他程式或資料之檔案的一部分中,或專用於所述程式之單一檔案中,或多個協調檔案(例如,儲存一或多個模組、子程式或程式碼之部分的檔案)中。電腦程式可經佈署以在一個電腦上執行或在處於一個站點或分散於多個站點且由通信網路互連之多個電腦上執行。Embodiments of the invention and all of the functional operations described in this specification can be performed on digital electronic circuits or computer software, firmware or hardware (including structural members and structural equivalents thereof disclosed in this specification) or Implemented in the portfolio. Embodiments of the present invention may be implemented as one or more computer program products, that is, one or more computer programs embodied in an information carrier (eg, in a machine readable storage medium) for use by a data processing device (For example, a programmable processor, a computer or a plurality of processors or computers) performs or controls the operation of the data processing apparatus. Any form of programming language (including compiled or interpreted language) can be written into a computer program (also known as a program, software, software application or code) and can be deployed in any form, including as a stand-alone program or as Modules, components, sub-normals or other units suitable for use in a computing environment. The computer program does not have to correspond to the file. The program may be stored in a portion of a file in which other programs or materials are stored, or in a single file dedicated to the program, or in a plurality of coordinated files (eg, storing one or more modules, subprograms, or portions of code) Archive)). Computer programs can be deployed to be executed on one computer or on multiple computers that are at one site or distributed across multiple sites and interconnected by a communication network.

本說明書中所描述之製程及邏輯流程可藉由執行一或多個電腦程式以藉由對輸入資料操作及產生輸出而執行功能之一或多個可程式化處理器執行。該等製程及邏輯流程亦可由專用邏輯電路,例如現場可程式閘陣列(FPGA)或特定應用積體電路(ASIC)執行,且裝置可實施為該專用邏輯電路。The processes and logic flows described in this specification can be performed by one or more computer programs executing one or more programmable processors by performing operations on input data and generating output. The processes and logic flows may also be performed by dedicated logic circuitry, such as a field programmable gate array (FPGA) or an application specific integrated circuit (ASIC), and the apparatus may be implemented as the dedicated logic circuitry.

上述研磨裝置及方法可應用於多種研磨系統中。研磨墊或承載頭或兩者可移動以提供研磨表面與基板之間的相對運動。舉例而言,平臺可在軌道上運行而不是旋轉。研磨墊可為緊固至平臺之圓形(或某些其他形狀)墊。終點偵測系統之一些態樣可應用於線性研磨系統,例如,在研磨墊為線性移動之連續或盤式帶的情況下。研磨層可為標準(例如,具有或不具有填料之聚胺基甲酸酯)研磨材料、軟材料或固定研磨材料。使用相對定位之術語;應理解,可將研磨表面及基板固定於垂直定向或某一其他定向中。The above grinding apparatus and method can be applied to a variety of grinding systems. The polishing pad or carrier head or both can be moved to provide relative motion between the abrasive surface and the substrate. For example, the platform can run on a track instead of rotating. The polishing pad can be a circular (or some other shape) pad that is fastened to the platform. Some aspects of the endpoint detection system can be applied to linear polishing systems, for example, where the polishing pad is a linear moving continuous or disc belt. The abrasive layer can be a standard (eg, a polyurethane with or without a filler) abrasive material, a soft material, or a fixed abrasive material. The term relative positioning is used; it should be understood that the abrasive surface and substrate can be fixed in a vertical orientation or some other orientation.

已描述本發明之特定實施例。其他實施例在下列申請專利範圍之範疇內。舉例而言,在申請專利範圍中所敍述之行為可以不同次序執行且仍達成合乎需要之結果。Specific embodiments of the invention have been described. Other embodiments are within the scope of the following patent claims. For example, the acts described in the scope of the claims can be performed in a different order and still achieve desirable results.

10...基板10. . . Substrate

12...晶圓12. . . Wafer

14...最外層14. . . Outermost layer

16...下伏層16. . . Underlying layer

20...研磨裝置20. . . Grinding device

22...驅動軸twenty two. . . Drive shaft

24...平臺/可旋轉圓盤形狀平臺twenty four. . . Platform/rotary disc shape platform

25...中心軸/軸25. . . Central axis/axis

26...凹槽26. . . Groove

30...研磨墊30. . . Abrasive pad

36...光學入口36. . . Optical entrance

38...研磨液體38. . . Grinding liquid

39...組合漿料/漂洗臂/臂39. . . Combined slurry / rinse arm / arm

50...原位監控模組/模組50. . . In-situ monitoring module/module

51...光源51. . . light source

52...光偵測器/偵測器52. . . Light detector / detector

53...光學頭53. . . Optical head

54...分叉光學電纜54. . . Bifurcated optical cable

55...幹線55. . . Trunk

56...分支/分支部分56. . . Branch/branch section

58...分支/分支部分58. . . Branch/branch section

70...承載頭70. . . Carrier head

71...中心軸/軸71. . . Central axis/axis

72...支撐結構72. . . supporting structure

74...承載驅動軸74. . . Carrying drive shaft

76...承載頭旋轉馬達76. . . Carrier head rotation motor

301...點301. . . point

302...點302. . . point

303...點303. . . point

304...點304. . . point

305...點305. . . point

306...點306. . . point

307...點307. . . point

308...點308. . . point

309...點309. . . point

310...點310. . . point

311...點311. . . point

600...方法600. . . method

602...步驟602. . . step

604...步驟604. . . step

606...步驟606. . . step

608...步驟608. . . step

610...步驟610. . . step

612...步驟612. . . step

614...步驟614. . . step

616...步驟616. . . step

620...步驟620. . . step

622...步驟622. . . step

624...步驟624. . . step

626...步驟626. . . step

630...步驟630. . . step

705...研磨穩定週期705. . . Grinding stabilization cycle

710...中心區域710. . . Central region

715...邊緣區域715. . . Edge area

720...中間區域720. . . Intermediate area

730...索引730. . . index

735...旋轉之數目735. . . Number of rotations

CE ...終點C E . . . end

EDP...研磨終點EDP. . . Grinding end point

Eu ...速率E u . . . rate

MA ...過度研磨速率M A . . . Excessive grinding rate

T1 ...第一研磨時間T 1 . . . First grinding time

T2 ...隨後時間T 2 . . . Later time

第1圖展示一基板之一部分的一實例橫截面。Figure 1 shows an example cross section of a portion of a substrate.

第2圖為一圖示一研磨裝置之一實例的橫截面圖。Figure 2 is a cross-sectional view showing an example of a polishing apparatus.

第3圖為一圖示原位量測之位置之一實例旋轉平臺的俯視圖。Figure 3 is a top plan view of one example of a rotating platform illustrating the position of the in-situ measurement.

第4圖為一圖示來自一光譜監控系統展示一良好資料密合之一實例索引跡線的示意圖。Figure 4 is a diagram showing an example index trace from a spectral monitoring system showing a good data fit.

第5圖為一圖示來自一光譜監控系統展示一較弱密合之一實例索引跡線的示意圖。Figure 5 is a diagram showing an example index trace from a spectral monitoring system showing a weaker fit.

第6圖為一判定研磨終點之實施例的流程圖。Figure 6 is a flow chart of an embodiment for determining the end point of the grinding.

第7圖圖示一研磨進程相對於時間之實例曲線圖,其對於一調整研磨速率之製程。Figure 7 illustrates an example plot of the grinding process versus time for a process to adjust the polishing rate.

各種圖式中之相同元件符號及標號指示相同元件。The same component symbols and symbols in the various drawings indicate the same components.

600...方法600. . . method

602...步驟602. . . step

604...步驟604. . . step

606...步驟606. . . step

608...步驟608. . . step

610...步驟610. . . step

612...步驟612. . . step

614...步驟614. . . step

616...步驟616. . . step

620...步驟620. . . step

622...步驟622. . . step

624...步驟624. . . step

626...步驟626. . . step

630...步驟630. . . step

Claims (25)

一種電腦實施之基板監控方法,其包含以下步驟:用一原位光學監控系統獲得一序列現時光譜,來自該序列現時光譜之每一現時光譜為自一基板反射之光的一光譜,該基板具有一經受研磨之最外層及至少一個下伏層;比較每一現時光譜與來自一第一參考光譜庫之複數個參考光譜且判定一第一最佳匹配參考光譜以產生一第一序列之第一最佳匹配參考光譜;比較每一現時光譜與來自一第二參考光譜庫之複數個參考光譜且判定一第二最佳匹配參考光譜以產生一第二序列之第二最佳匹配參考光譜;判定對於該第一序列之一第一適合度;判定對於該第二序列之一第二適合度;及基於該第一序列、該第二序列、該第一適合度及該第二適合度判定一研磨終點。 A computer-implemented substrate monitoring method comprising the steps of: obtaining a sequence of current spectra by an in-situ optical monitoring system, wherein each current spectrum from the current spectrum of the sequence is a spectrum of light reflected from a substrate, the substrate having An outermost layer subjected to grinding and at least one underlying layer; comparing each of the current spectra with a plurality of reference spectra from a first reference spectral library and determining a first best matching reference spectrum to produce a first sequence Best matching reference spectra; comparing each of the current spectra with a plurality of reference spectra from a second reference spectral library and determining a second best matching reference spectrum to produce a second sequence of second best matching reference spectra; a first fitness for the first sequence; determining a second fitness for the second sequence; and determining a first based on the first sequence, the second sequence, the first fitness, and the second fitness Grinding the end point. 如申請專利範圍第1項之方法,其中判定該研磨終點之步驟包括以下步驟:判定該第一最佳匹配參考光譜是否指示一終點,且若是,則判定該第一適合度是否比該第二適合度更佳,且若是,則稱為一終點。 The method of claim 1, wherein the step of determining the polishing end point comprises the step of: determining whether the first best matching reference spectrum indicates an end point, and if so, determining whether the first fitness level is greater than the second Better fit, and if so, it is called an end point. 如申請專利範圍第1項之方法,其進一步包含以下步驟:判定對於每一第一最佳匹配參考光譜之一第一索引值以產生一序列第一索引值,包含使一第一函數擬合(fitting)該序列第一索引、判定對於每一第二最佳匹配參考光譜之一第二索引值以產生一序列第二索引值,及使 一第二函數擬合該序列第二索引值。 The method of claim 1, further comprising the steps of: determining a first index value for each of the first best matching reference spectra to generate a sequence of first index values, comprising fitting a first function Fitting a first index of the sequence, determining a second index value for each of the second best matching reference spectra to generate a sequence of second index values, and A second function fits the second index value of the sequence. 如申請專利範圍第3項之方法,其中該第一函數是一第一線性函數,且該第二函數是一第二線性函數。 The method of claim 3, wherein the first function is a first linear function and the second function is a second linear function. 如申請專利範圍第3項之方法,其中判定該第一適合度包括以下步驟:判定該序列第一索引值對該第一函數之一適合度,且其中判定該第二適合度包括以下步驟:判定該序列第二索引值對該第二函數之一適合度。 The method of claim 3, wherein determining the first fitness comprises the steps of: determining a first index value of the sequence for one of the first functions, and wherein determining the second fitness comprises the following steps: A second index value of the sequence is determined to be suitable for one of the second functions. 如申請專利範圍第5項之方法,其進一步包含以下步驟:判定對於該第一序列之該第一適合度是否比對於該第二序列之該第二適合度更佳。 The method of claim 5, further comprising the step of determining whether the first fitness for the first sequence is better than the second fitness for the second sequence. 如申請專利範圍第1項之方法,其中來自該第一參考光譜庫之該複數個參考光譜表示具有一第一厚度之該下伏層的基板,且來自該第二參考光譜庫之該複數個參考光譜表示具有一不同第二厚度之該下伏層的基板。 The method of claim 1, wherein the plurality of reference spectra from the first reference spectral library represent a substrate having the first thickness of the underlying layer, and the plurality of substrates from the second reference spectral library The reference spectrum represents a substrate having the underlying layer of a different second thickness. 如申請專利範圍第1項之方法,其中判定一第一最佳匹配參考光譜包括以下步驟:判定來自該第一參考光譜庫之哪個參考光譜具有與該現時光譜之最小差,且其中判定一第二最佳匹配參考光譜包括以下步驟:判定來自該第二參考光譜庫之哪個參考光譜具有與該現時光譜之最小差。 The method of claim 1, wherein determining a first best matching reference spectrum comprises the steps of: determining which reference spectrum from the first reference spectral library has a minimum difference from the current spectrum, and wherein determining a The two best matching reference spectra include the step of determining which reference spectrum from the second reference spectral library has the smallest difference from the current spectrum. 一種電腦實施之基板監控方法,其包含以下步驟:自一基板之一第一區域接收反射光之一第一序列現時光譜;自該基板之一第二區域接收反射光之一第二序列現時光 譜;比較來自該第一序列現時光譜之每一現時光譜與來自一第一複數個參考光譜庫之一第一複數個參考光譜以產生複數個第一序列最佳匹配參考光譜;比較來自該第二序列現時光譜之每一現時光譜與來自一第二複數個參考光譜庫之一第二複數個參考光譜以產生複數個第二序列最佳匹配參考光譜;判定對於該複數個第一序列最佳匹配參考光譜之複數個第一適合度;及判定對於該複數個第二序列最佳匹配參考光譜之複數個第二適合度。 A computer-implemented substrate monitoring method includes the steps of: receiving a first sequence of reflected light from a first region of a substrate; receiving a second sequence of reflected light from a second region of the substrate Spectrum; comparing each current spectrum from the current spectrum of the first sequence with a first plurality of reference spectra from a first plurality of reference spectral libraries to generate a plurality of first sequence best matching reference spectra; comparing from the first Each of the current spectra of the two sequences of the current spectrum and the second plurality of reference spectra from a second plurality of reference spectral libraries to generate a plurality of second sequence best matching reference spectra; determining the best for the plurality of first sequences Matching a plurality of first fitness levels of the reference spectrum; and determining a plurality of second fitness levels for the plurality of second sequences to best match the reference spectrum. 如申請專利範圍第9項之方法,其中該第一複數個參考光譜庫全部與該第二複數個參考光譜庫相同。 The method of claim 9, wherein the first plurality of reference spectral libraries are all identical to the second plurality of reference spectral libraries. 如申請專利範圍第9項之方法,其中該第一複數個參考光譜庫中無一與該第二複數個參考光譜庫相同。 The method of claim 9, wherein none of the first plurality of reference spectral libraries is the same as the second plurality of reference spectral libraries. 如申請專利範圍第9項之方法,其中產生該複數個第一序列最佳匹配參考光譜包括以下步驟:比較來自該第一序列現時光譜之每一現時光譜與來自一第一參考光譜庫之複數個參考光譜且判定一第一中間適合度;比較來自該第一序列現時光譜之每一現時光譜與來自一第二參考光譜庫之複數個參考光譜且判定一第二中間適合度; 比較該第一中間適合度與該第二中間適合度;基於比較該第一中間適合度與該第二中間適合度而選擇該第一參考光譜庫或該第二參考光譜庫中之一者;及基於該第一選擇判定一第一序列最佳匹配參考光譜;且其中產生該複數個第二序列最佳匹配參考光譜包括以下步驟:比較來自該第二序列現時光譜之每一現時光譜與來自該第一參考光譜庫之複數個參考光譜且判定一第三中間適合度;比較來自該第二序列現時光譜之每一現時光譜與來自該第二參考光譜庫之複數個參考光譜且判定一第四中間適合度;比較該第三中間適合度與該第四中間適合度;基於比較該第三中間適合度與該第四中間適合度之第二選擇該第一參考光譜庫或該第二參考光譜庫中之一者,及基於該第二選擇判定一第二序列最佳匹配參考光譜。 The method of claim 9, wherein generating the plurality of first sequence best matching reference spectra comprises the steps of comparing each current spectrum from the current spectrum of the first sequence with a plurality of samples from a first reference spectrum library Reference spectra and determining a first intermediate fitness; comparing each current spectrum from the current spectrum of the first sequence with a plurality of reference spectra from a second reference spectrum library and determining a second intermediate fitness; Comparing the first intermediate fitness with the second intermediate fitness; selecting one of the first reference spectral library or the second reference spectral library based on comparing the first intermediate fitness with the second intermediate fitness; And determining a first sequence best matching reference spectrum based on the first selection; and wherein generating the plurality of second sequence best matching reference spectra comprises the steps of: comparing each current spectrum from the current spectrum of the second sequence with Comparing the plurality of reference spectra of the first reference spectrum library and determining a third intermediate fitness; comparing each current spectrum from the current spectrum of the second sequence with a plurality of reference spectra from the second reference spectrum library and determining a first a middle intermediate fitness; comparing the third intermediate fitness with the fourth intermediate fitness; selecting the first reference spectral library or the second reference based on comparing the third intermediate fitness with the second intermediate fitness One of the spectral libraries, and based on the second selection, determines a second sequence to best match the reference spectrum. 如申請專利範圍第12項之方法,其中該第一選擇及該第二選擇係在一研磨之一預定週期內判定。 The method of claim 12, wherein the first selection and the second selection are determined within a predetermined period of polishing. 如申請專利範圍第13項之方法,其進一步包含以下步驟:基於該第一序列最佳匹配參考光譜及一相應第一適合度判定該第一區域之一第一研磨終點;及基於該第二序列最佳匹配參考光譜及一相應第二適合度 判定該第二區域之一第二研磨終點。 The method of claim 13, further comprising the steps of: determining a first polishing endpoint of the first region based on the first sequence best matching reference spectrum and a corresponding first fitness; and based on the second Sequence best matching reference spectrum and a corresponding second fitness A second grinding end point of one of the second regions is determined. 一種電腦實施之基板監控方法,其包含以下步驟:自一基板之一第一區域接收反射光之一第一序列現時光譜;自該基板之一第二區域接收反射光之一第二序列現時光譜;比較來自該第一序列現時光譜之每一現時光譜與來自一第一參考光譜庫之複數個參考光譜以產生一第一序列最佳匹配參考光譜;及比較來自該第二序列現時光譜之每一現時光譜與來自一第二參考光譜庫之複數個參考光譜以產生一第二序列最佳匹配參考光譜,該第二參考光譜庫不同於該第一參考光譜庫。 A computer-implemented substrate monitoring method includes the steps of: receiving a first sequence current spectrum of reflected light from a first region of a substrate; receiving a second sequence current spectrum of reflected light from a second region of the substrate Comparing each of the current spectra from the current spectrum of the first sequence with a plurality of reference spectra from a first reference spectral library to produce a first sequence of best matching reference spectra; and comparing each of the current spectra from the second sequence A current spectrum and a plurality of reference spectra from a second reference spectral library to produce a second sequence of best matching reference spectra, the second reference spectral library being different from the first reference spectral library. 如申請專利範圍第15項之方法,其中該第一參考光譜庫及該第二參考光譜庫為預定的。 The method of claim 15, wherein the first reference spectral library and the second reference spectral library are predetermined. 一種電腦實施之基板監控方法,其包含以下步驟:用一原位光學監控系統獲得一序列現時光譜,來自該序列現時光譜之每一現時光譜為自一基板反射之光的一光譜,該基板具有一經受研磨之最外層及至少一個下伏層;比較每一現時光譜與來自複數個參考光譜庫之一第一庫之一第一複數個參考光譜以判定一第一最佳匹配參考光譜,且比較每一現時光譜與來自該複數個參考光譜庫之一第二庫之一第二複數個參考光譜以判定一第二最佳匹配參考光譜; 判定哪個庫提供對該序列現時光譜的一較佳適合度;及基於該序列現時光譜及提供對該序列現時光譜之一最佳適合的該庫判定一研磨終點。 A computer-implemented substrate monitoring method comprising the steps of: obtaining a sequence of current spectra by an in-situ optical monitoring system, wherein each current spectrum from the current spectrum of the sequence is a spectrum of light reflected from a substrate, the substrate having An outermost layer subjected to grinding and at least one underlying layer; comparing each of the current spectra with a first plurality of reference spectra from one of the first libraries of the plurality of reference spectral libraries to determine a first best matching reference spectrum, and Comparing each of the current spectra with a second plurality of reference spectra from a second bank of the plurality of reference spectral libraries to determine a second best matching reference spectrum; Determining which library provides a preferred fitness for the current spectrum of the sequence; and determining a polishing endpoint based on the current spectrum of the sequence and providing the library that best fits one of the current spectra of the sequence. 一種電腦程式產品,其確實經編碼於一電腦可讀媒體上,該電腦程式產品可操作以促使資料處理裝置執行包含下列各項之操作:用一原位光學監控系統獲得一序列現時光譜,來自該序列現時光譜之每一現時光譜為自一基板反射之光的一光譜,該基板具有一經受研磨之最外層及至少一個下伏層;比較每一現時光譜與來自一第一參考光譜庫之複數個參考光譜且判定一第一最佳匹配參考光譜以產生一第一序列之第一最佳匹配參考光譜;比較每一現時光譜與來自一第二參考光譜庫之複數個參考光譜且判定一第二最佳匹配參考光譜以產生一第二序列之第二最佳匹配參考光譜;判定對於該第一序列之一第一適合度;判定對於該第二序列之一第二適合度;及基於該第一序列、該第二序列、該第一適合度及該第二適合度判定一研磨終點。 A computer program product, as embodied on a computer readable medium, operable to cause a data processing device to perform an operation comprising: obtaining an array of current spectra from an in situ optical monitoring system, Each current spectrum of the current spectrum of the sequence is a spectrum of light reflected from a substrate having a top layer subjected to grinding and at least one underlying layer; comparing each of the current spectra with a library from a first reference spectrum A plurality of reference spectra and determining a first best matching reference spectrum to generate a first best matching reference spectrum of the first sequence; comparing each of the current spectra with a plurality of reference spectra from a second reference spectral library and determining one a second best matching reference spectrum to generate a second best matching reference spectrum of the second sequence; determining a first fitness for the first sequence; determining a second fitness for the second sequence; and based on The first sequence, the second sequence, the first fitness, and the second fitness determine a polishing endpoint. 如申請專利範圍第18項之電腦程式產品,其中判定該研磨終點包括以下操作:判定該第一最佳匹配參考光譜是否指示一終點,且若是,則判定該第一適合度是否比該第二適合度更佳,且若是,則稱為一終點。 The computer program product of claim 18, wherein determining the polishing end point comprises: determining whether the first best matching reference spectrum indicates an end point, and if so, determining whether the first fitness level is greater than the second Better fit, and if so, it is called an end point. 如申請專利範圍第18項之電腦程式產品,其進一步 包含以下操作:對於每一第一最佳匹配參考光譜判定一第一索引值以產生一序列第一索引值、使一第一函數擬合該序列第一索引值、對於每一第二最佳匹配參考光譜判定一第二索引值以產生一序列第二索引值,及使一第二函數擬合該序列第二索引值。 For example, if the computer program product of claim 18 is applied, further The method includes: determining a first index value for each first best matching reference spectrum to generate a sequence of first index values, fitting a first function to the first index value of the sequence, for each second best The matching reference spectrum determines a second index value to produce a sequence of second index values, and a second function fits the sequence second index value. 如申請專利範圍第20項之電腦程式產品,其中該第一函數是一第一線性函數,且該第二函數是一第二線性函數。 The computer program product of claim 20, wherein the first function is a first linear function and the second function is a second linear function. 如申請專利範圍第20項之電腦程式產品,其中判定該第一適合度包括以下操作:判定該序列第一索引值對該第一函數之一適合度,且其中判定該第二適合度包括以下操作:判定該序列第二索引值對該第二函數之一適合度。 The computer program product of claim 20, wherein determining the first fitness comprises the following operation: determining a first index value of the sequence is suitable for the first function, and wherein determining the second fitness includes the following Operation: Determine the suitability of the second index value of the sequence for one of the second functions. 一種電腦程式產品,其經確實編碼於一電腦可讀媒體上,該電腦程式產品可操作以促使資料處理裝置執行包含下列各項之操作:用一原位光學監控系統獲得一序列現時光譜,來自該序列現時光譜之每一現時光譜為自一基板反射之光的一光譜,該基板具有一經受研磨之最外層及至少一個下伏層;比較每一現時光譜與來自複數個參考光譜庫之一第一庫之一第一複數個參考光譜以判定一第一最佳匹配參考光譜,且比較每一現時光譜與來自該複數個參考光譜庫之一第二庫之一第二複數個參考光譜以判定一第二最佳匹配參考光譜; 判定哪個庫提供對該序列現時光譜的一較佳適合度;及基於該序列現時光譜及提供對該序列現時光譜之一最佳適合的該庫判定一研磨終點。 A computer program product, as embodied on a computer readable medium, operable to cause a data processing device to perform an operation comprising: obtaining an array of current spectra from an in situ optical monitoring system, Each current spectrum of the current spectrum of the sequence is a spectrum of light reflected from a substrate having a top layer subjected to grinding and at least one underlying layer; comparing each of the current spectra with one of a plurality of reference spectral libraries a first plurality of reference spectra of the first bank to determine a first best matching reference spectrum, and comparing each of the current spectra with a second plurality of reference spectra from one of the second libraries of the plurality of reference spectral libraries Determining a second best matching reference spectrum; Determining which library provides a preferred fitness for the current spectrum of the sequence; and determining a polishing endpoint based on the current spectrum of the sequence and providing the library that best fits one of the current spectra of the sequence. 一種電腦程式產品,其經編碼於一電腦可讀媒體上,該電腦程式產品可操作以促使資料處理裝置執行包含下列各項之操作:自一基板之一第一區域接收反射光之一第一序列現時光譜;自該基板之一第二區域接收反射光之一第二序列現時光譜;比較來自該第一序列現時光譜之每一現時光譜與來自一第一複數個參考光譜庫之一第一複數個參考光譜以產生複數個第一序列最佳匹配參考光譜;比較來自該第二序列現時光譜之每一現時光譜與來自一第二複數個參考光譜庫之一第二複數個參考光譜以產生複數個第二序列最佳匹配參考光譜;判定對於該複數個第一序列最佳匹配參考光譜之複數個第一適合度;及判定對於該複數個第二序列最佳匹配參考光譜之複數個第二適合度。 A computer program product encoded on a computer readable medium, the computer program product being operative to cause a data processing device to perform an operation comprising: receiving a reflected light from a first region of a substrate a sequence current spectrum; receiving a second sequence of reflected light from a second region of the substrate; comparing each current spectrum from the current spectrum of the first sequence with one from a first plurality of reference spectral libraries a plurality of reference spectra to generate a plurality of first sequence best matching reference spectra; comparing each current spectrum from the current spectrum of the second sequence with a second plurality of reference spectra from a second plurality of reference spectral libraries to generate a plurality of second sequences optimally matching the reference spectra; determining a plurality of first fitnesss for the plurality of first sequences to best match the reference spectra; and determining a plurality of first matching of the plurality of second sequences for the best matching reference spectra Two fitness. 一種電腦程式產品,其經編碼於一電腦可讀媒體上之,該電腦程式產品可操作以促使資料處理裝置執行包含下列各項之操作:自一基板之一第一區域接收反射光之一第一序列現時光 譜;自該基板之一第二區域接收反射光之一第二序列現時光譜;比較來自該第一序列現時光譜之每一現時光譜與來自一第一參考光譜庫之複數個參考光譜以產生一第一序列最佳匹配參考光譜;及比較來自該第二序列現時光譜之每一現時光譜與來自一第二參考光譜庫之複數個參考光譜以產生一第二序列最佳匹配參考光譜,該第二參考光譜庫不同於該第一參考光譜庫。 A computer program product encoded on a computer readable medium, the computer program product being operative to cause a data processing device to perform an operation comprising: receiving a reflected light from a first region of a substrate a sequence of current light Generating a second sequence of reflected light from a second region of the substrate; comparing each of the current spectra from the current spectrum of the first sequence with a plurality of reference spectra from a first reference spectral library to produce a The first sequence best matches the reference spectrum; and compares each of the current spectra from the current spectrum of the second sequence with a plurality of reference spectra from a second reference spectral library to produce a second sequence of best matching reference spectra, the first The second reference spectral library is different from the first reference spectral library.
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