TWI490661B - 產生二級圖案以供微影處理的方法和使用其的圖案產生器 - Google Patents
產生二級圖案以供微影處理的方法和使用其的圖案產生器 Download PDFInfo
- Publication number
- TWI490661B TWI490661B TW099115881A TW99115881A TWI490661B TW I490661 B TWI490661 B TW I490661B TW 099115881 A TW099115881 A TW 099115881A TW 99115881 A TW99115881 A TW 99115881A TW I490661 B TWI490661 B TW I490661B
- Authority
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- Prior art keywords
- pattern
- beamlets
- array
- error diffusion
- beamlet
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 54
- 238000012545 processing Methods 0.000 title claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 50
- 238000001459 lithography Methods 0.000 claims description 37
- 239000002245 particle Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 20
- 230000033001 locomotion Effects 0.000 claims description 14
- 238000007781 pre-processing Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 3
- 238000011156 evaluation Methods 0.000 description 35
- 235000012431 wafers Nutrition 0.000 description 10
- 238000000059 patterning Methods 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 7
- 230000009467 reduction Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012854 evaluation process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910001149 41xx steel Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17976009P | 2009-05-20 | 2009-05-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201107896A TW201107896A (en) | 2011-03-01 |
| TWI490661B true TWI490661B (zh) | 2015-07-01 |
Family
ID=43125804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099115881A TWI490661B (zh) | 2009-05-20 | 2010-05-19 | 產生二級圖案以供微影處理的方法和使用其的圖案產生器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8598544B2 (ko) |
| EP (1) | EP2433294B1 (ko) |
| JP (1) | JP5801288B2 (ko) |
| KR (1) | KR101605832B1 (ko) |
| CN (1) | CN102460632B (ko) |
| TW (1) | TWI490661B (ko) |
| WO (1) | WO2010134017A1 (ko) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101854828B1 (ko) * | 2009-05-20 | 2018-05-04 | 마퍼 리쏘그라피 아이피 비.브이. | 듀얼 패스 스캐닝 |
| US8539395B2 (en) | 2010-03-05 | 2013-09-17 | Micronic Laser Systems Ab | Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image |
| KR102117986B1 (ko) * | 2010-09-27 | 2020-06-02 | 가부시키가이샤 니콘 | 공간 광변조기의 구동 방법, 노광용 패턴의 생성 방법, 노광 방법, 및 노광 장치 |
| NL2007918A (en) | 2010-12-20 | 2012-06-21 | Asml Netherlands Bv | Method of controlling a patterning device in a lithographic apparatus, device manufacturing method and lithographic apparatus. |
| NL2007604C2 (en) * | 2011-10-14 | 2013-05-01 | Mapper Lithography Ip Bv | Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams. |
| US8584057B2 (en) * | 2012-03-01 | 2013-11-12 | Taiwan Semiconductor Manufacturing Copmany, Ltd. | Non-directional dithering methods |
| FR2994749B1 (fr) * | 2012-08-24 | 2015-07-24 | Commissariat Energie Atomique | Procede de preparation d’un motif a imprimer sur plaque ou sur masque par lithographie a faisceau d’electrons, systeme de conception de circuit imprime et programme d’ordinateur correspondants. |
| US9690208B2 (en) * | 2013-12-10 | 2017-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mirror array in digital pattern generator (DPG) |
| JP6337511B2 (ja) * | 2014-02-26 | 2018-06-06 | 大日本印刷株式会社 | マルチビーム電子線描画装置を用いたパターニング方法 |
| JP2015207608A (ja) * | 2014-04-17 | 2015-11-19 | キヤノン株式会社 | リソグラフィ装置、および物品の製造方法 |
| US9443699B2 (en) | 2014-04-25 | 2016-09-13 | Ims Nanofabrication Ag | Multi-beam tool for cutting patterns |
| JP2015211175A (ja) * | 2014-04-28 | 2015-11-24 | キヤノン株式会社 | リソグラフィ装置、および物品の製造方法 |
| EP3358599B1 (en) * | 2014-05-30 | 2021-01-27 | IMS Nanofabrication GmbH | Compensation of dose inhomogeneity using row calibration |
| JP6890373B2 (ja) | 2014-07-10 | 2021-06-18 | アイエムエス ナノファブリケーション ゲーエムベーハー | 畳み込みカーネルを使用する粒子ビーム描画機における結像偏向の補償 |
| US9568907B2 (en) | 2014-09-05 | 2017-02-14 | Ims Nanofabrication Ag | Correction of short-range dislocations in a multi-beam writer |
| KR102302015B1 (ko) * | 2015-03-17 | 2021-09-15 | 아이엠에스 나노패브릭케이션 게엠베하 | 완화된 임계 치수의 패턴 에어리어의 멀티빔 기록 |
| US9653263B2 (en) | 2015-03-17 | 2017-05-16 | Ims Nanofabrication Ag | Multi-beam writing of pattern areas of relaxed critical dimension |
| EP3096342B1 (en) | 2015-03-18 | 2017-09-20 | IMS Nanofabrication AG | Bi-directional double-pass multi-beam writing |
| US10410831B2 (en) | 2015-05-12 | 2019-09-10 | Ims Nanofabrication Gmbh | Multi-beam writing using inclined exposure stripes |
| JP6627632B2 (ja) * | 2016-02-08 | 2020-01-08 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
| US10325756B2 (en) | 2016-06-13 | 2019-06-18 | Ims Nanofabrication Gmbh | Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer |
| JP6662248B2 (ja) | 2016-09-01 | 2020-03-11 | 株式会社ニューフレアテクノロジー | 描画データの作成方法 |
| NL2019503B1 (en) * | 2016-09-08 | 2018-08-31 | Mapper Lithography Ip Bv | Fabricating unique chips using a charged particle multi-beamlet lithography system |
| JP7002837B2 (ja) * | 2016-10-26 | 2022-01-20 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
| US10325757B2 (en) | 2017-01-27 | 2019-06-18 | Ims Nanofabrication Gmbh | Advanced dose-level quantization of multibeam-writers |
| JP7201364B2 (ja) * | 2017-08-25 | 2023-01-10 | アイエムエス ナノファブリケーション ゲーエムベーハー | マルチビーム描画装置において露光される露光パターンにおける線量関連の特徴再形成 |
| US10522329B2 (en) | 2017-08-25 | 2019-12-31 | Ims Nanofabrication Gmbh | Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus |
| US11569064B2 (en) | 2017-09-18 | 2023-01-31 | Ims Nanofabrication Gmbh | Method for irradiating a target using restricted placement grids |
| US10651010B2 (en) | 2018-01-09 | 2020-05-12 | Ims Nanofabrication Gmbh | Non-linear dose- and blur-dependent edge placement correction |
| US10840054B2 (en) | 2018-01-30 | 2020-11-17 | Ims Nanofabrication Gmbh | Charged-particle source and method for cleaning a charged-particle source using back-sputtering |
| US10483080B1 (en) * | 2018-07-17 | 2019-11-19 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device |
| US10593509B2 (en) | 2018-07-17 | 2020-03-17 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device |
| US11099482B2 (en) | 2019-05-03 | 2021-08-24 | Ims Nanofabrication Gmbh | Adapting the duration of exposure slots in multi-beam writers |
| US11309163B2 (en) * | 2019-11-07 | 2022-04-19 | Applied Materials, Inc. | Multibeamlet charged particle device and method |
| KR20210132599A (ko) | 2020-04-24 | 2021-11-04 | 아이엠에스 나노패브릭케이션 게엠베하 | 대전 입자 소스 |
| CN113722672B (zh) * | 2021-07-20 | 2022-04-05 | 厦门微亚智能科技有限公司 | 一种VR Lens杂散光噪声的检测计算方法 |
| WO2022252707A1 (zh) * | 2022-02-24 | 2022-12-08 | 袁元 | 半导体器件的加工控制方法、装置及高能粒子束光刻设备 |
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| CN1605046A (zh) * | 2001-12-14 | 2005-04-06 | 麦克罗尼克激光系统公司 | 工件构图方法和装置 |
| CN101019203A (zh) * | 2004-05-17 | 2007-08-15 | 迈普尔平版印刷Ip有限公司 | 带电粒子束曝光系统 |
| CN101427184A (zh) * | 2006-03-10 | 2009-05-06 | 迈普尔平版印刷Ip有限公司 | 光刻系统和投影方法 |
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-
2010
- 2010-05-17 EP EP10726585.2A patent/EP2433294B1/en active Active
- 2010-05-17 WO PCT/IB2010/052177 patent/WO2010134017A1/en active Application Filing
- 2010-05-17 CN CN201080032950.2A patent/CN102460632B/zh active Active
- 2010-05-17 JP JP2012511390A patent/JP5801288B2/ja active Active
- 2010-05-17 KR KR1020117030508A patent/KR101605832B1/ko active IP Right Grant
- 2010-05-19 TW TW099115881A patent/TWI490661B/zh active
-
2011
- 2011-11-10 US US13/293,370 patent/US8598544B2/en active Active
Patent Citations (3)
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| CN1605046A (zh) * | 2001-12-14 | 2005-04-06 | 麦克罗尼克激光系统公司 | 工件构图方法和装置 |
| CN101019203A (zh) * | 2004-05-17 | 2007-08-15 | 迈普尔平版印刷Ip有限公司 | 带电粒子束曝光系统 |
| CN101427184A (zh) * | 2006-03-10 | 2009-05-06 | 迈普尔平版印刷Ip有限公司 | 光刻系统和投影方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2433294A1 (en) | 2012-03-28 |
| CN102460632A (zh) | 2012-05-16 |
| JP5801288B2 (ja) | 2015-10-28 |
| EP2433294B1 (en) | 2016-07-27 |
| TW201107896A (en) | 2011-03-01 |
| US20120286169A1 (en) | 2012-11-15 |
| CN102460632B (zh) | 2015-11-25 |
| KR20120027374A (ko) | 2012-03-21 |
| US8598544B2 (en) | 2013-12-03 |
| KR101605832B1 (ko) | 2016-03-23 |
| WO2010134017A1 (en) | 2010-11-25 |
| JP2012527764A (ja) | 2012-11-08 |
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