TWI481693B - 二組份蝕刻 - Google Patents
二組份蝕刻 Download PDFInfo
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- TWI481693B TWI481693B TW099117602A TW99117602A TWI481693B TW I481693 B TWI481693 B TW I481693B TW 099117602 A TW099117602 A TW 099117602A TW 99117602 A TW99117602 A TW 99117602A TW I481693 B TWI481693 B TW I481693B
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- 238000005530 etching Methods 0.000 title claims description 37
- 239000000203 mixture Substances 0.000 claims description 75
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 44
- 239000002253 acid Substances 0.000 claims description 28
- -1 ammonium tetrafluoroborate Chemical compound 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 17
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
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- 229910017855 NH 4 F Inorganic materials 0.000 claims description 5
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 claims description 4
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910001515 alkali metal fluoride Inorganic materials 0.000 claims description 4
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- 125000005270 trialkylamine group Chemical group 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 150000007942 carboxylates Chemical class 0.000 claims description 3
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 3
- DLDWUFCUUXXYTB-UHFFFAOYSA-N (2-oxo-1,2-diphenylethyl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OC(C=1C=CC=CC=1)C(=O)C1=CC=CC=C1 DLDWUFCUUXXYTB-UHFFFAOYSA-N 0.000 claims description 2
- MSWVMWGCNZQPIA-UHFFFAOYSA-N 1-fluoropropan-2-one Chemical compound CC(=O)CF MSWVMWGCNZQPIA-UHFFFAOYSA-N 0.000 claims description 2
- SZIFAVKTNFCBPC-UHFFFAOYSA-N 2-chloroethanol Chemical compound OCCCl SZIFAVKTNFCBPC-UHFFFAOYSA-N 0.000 claims description 2
- PSUDUEJJHCQGRJ-UHFFFAOYSA-N [F-].C1(=CC=CC=C1)[PH2+]C1=CC=CC=C1 Chemical compound [F-].C1(=CC=CC=C1)[PH2+]C1=CC=CC=C1 PSUDUEJJHCQGRJ-UHFFFAOYSA-N 0.000 claims description 2
- ILFFFKFZHRGICY-UHFFFAOYSA-N anthracene-1-sulfonic acid Chemical compound C1=CC=C2C=C3C(S(=O)(=O)O)=CC=CC3=CC2=C1 ILFFFKFZHRGICY-UHFFFAOYSA-N 0.000 claims description 2
- MBXXQYJBFRRFCK-UHFFFAOYSA-N benzyl fluoride Chemical compound FCC1=CC=CC=C1 MBXXQYJBFRRFCK-UHFFFAOYSA-N 0.000 claims description 2
- 229950011260 betanaphthol Drugs 0.000 claims description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 claims description 2
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- NJRDRQWVNAENQG-UHFFFAOYSA-N 2,3-dimethylbutane-2,3-diol;1,4-dioxane Chemical compound C1COCCO1.CC(C)(O)C(C)(C)O NJRDRQWVNAENQG-UHFFFAOYSA-N 0.000 claims 1
- IVPMOIBJGRBDQI-UHFFFAOYSA-N 4-methylbenzenesulfonic acid;nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1.CC1=CC=C(S(O)(=O)=O)C=C1 IVPMOIBJGRBDQI-UHFFFAOYSA-N 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
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- 125000005410 aryl sulfonium group Chemical group 0.000 claims 1
- GPRLTFBKWDERLU-UHFFFAOYSA-N bicyclo[2.2.2]octane Chemical compound C1CC2CCC1CC2 GPRLTFBKWDERLU-UHFFFAOYSA-N 0.000 claims 1
- 150000004324 hydroxyarenes Chemical class 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims 1
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
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- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- FQGOSLGTAHNBHO-UHFFFAOYSA-N [F-].[SH3+].C1(=CC=CC=C1)C Chemical compound [F-].[SH3+].C1(=CC=CC=C1)C FQGOSLGTAHNBHO-UHFFFAOYSA-N 0.000 description 2
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- BHBIPLOIWQSVID-UHFFFAOYSA-N thiohypofluorous acid Chemical compound SF BHBIPLOIWQSVID-UHFFFAOYSA-N 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-M toluenesulfonate group Chemical class C=1(C(=CC=CC1)S(=O)(=O)[O-])C LBLYYCQCTBFVLH-UHFFFAOYSA-M 0.000 description 1
- YRQNNUGOBNRKKW-UHFFFAOYSA-K trifluororuthenium Chemical compound F[Ru](F)F YRQNNUGOBNRKKW-UHFFFAOYSA-K 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09007411 | 2009-06-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201116612A TW201116612A (en) | 2011-05-16 |
| TWI481693B true TWI481693B (zh) | 2015-04-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW099117602A TWI481693B (zh) | 2009-06-04 | 2010-06-01 | 二組份蝕刻 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8647526B2 (https=) |
| EP (1) | EP2438140A1 (https=) |
| JP (1) | JP5801798B2 (https=) |
| KR (1) | KR20120036939A (https=) |
| CN (1) | CN102449112B (https=) |
| SG (1) | SG176274A1 (https=) |
| TW (1) | TWI481693B (https=) |
| WO (1) | WO2010139390A1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013008877A (ja) * | 2011-06-24 | 2013-01-10 | Kuraray Co Ltd | カーボンナノチューブ層とオーバーコート層とを具備する複合層のパターン形成方法、及び前記方法で形成されたパターン |
| CN102929418A (zh) * | 2011-08-09 | 2013-02-13 | 群康科技(深圳)有限公司 | 装饰膜、影像显示系统及触控感测装置的制造方法 |
| TWI495560B (zh) * | 2011-08-09 | 2015-08-11 | Chimei Innolux Corp | 透明基底上的裝飾膜、影像顯示系統及觸控感測裝置之製造方法 |
| EP2743969A4 (en) * | 2011-08-12 | 2015-04-01 | Univ Osaka | METHOD AND METHOD FOR PERFORMING SURFACE TREATMENT ON SOLID MATERIAL FOR A SOLAR CELL |
| JP6136186B2 (ja) * | 2012-10-16 | 2017-05-31 | 日立化成株式会社 | 液状組成物 |
| JP6011234B2 (ja) * | 2012-10-16 | 2016-10-19 | 日立化成株式会社 | 組成物 |
| JP6060611B2 (ja) * | 2012-10-16 | 2017-01-18 | 日立化成株式会社 | 組成物 |
| JP2014082330A (ja) * | 2012-10-16 | 2014-05-08 | Hitachi Chemical Co Ltd | ＳｉＮ膜の除去方法 |
| US9550940B2 (en) | 2012-10-16 | 2017-01-24 | Hitachi Chemical Company, Ltd. | Etching material |
| CN104854684B (zh) | 2012-11-14 | 2017-10-10 | 太阳化学公司 | 用于制造背面钝化太阳能电池的组合物和方法 |
| JP6369460B2 (ja) * | 2013-05-31 | 2018-08-08 | 日立化成株式会社 | エッチング組成物 |
| CN104993019A (zh) * | 2015-07-09 | 2015-10-21 | 苏州阿特斯阳光电力科技有限公司 | 一种局部背接触太阳能电池的制备方法 |
| TWI550886B (zh) * | 2015-07-10 | 2016-09-21 | 國立屏東科技大學 | 矽基板表面粗糙化方法 |
| JP2016086187A (ja) * | 2016-02-01 | 2016-05-19 | 日立化成株式会社 | ＳｉＮ膜の除去方法 |
| JP7603517B2 (ja) * | 2021-04-26 | 2024-12-20 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、および、基板処理装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080121621A1 (en) * | 2005-01-11 | 2008-05-29 | Werner Stockum | Printable Medium for the Etching of Silicon Dioxide and Silicon Nitride Layers |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3979241A (en) * | 1968-12-28 | 1976-09-07 | Fujitsu Ltd. | Method of etching films of silicon nitride and silicon dioxide |
| US4781792A (en) * | 1985-05-07 | 1988-11-01 | Hogan James V | Method for permanently marking glass |
| GB9210514D0 (en) * | 1992-05-16 | 1992-07-01 | Micro Image Technology Ltd | Etching compositions |
| WO1997002958A1 (en) | 1995-07-10 | 1997-01-30 | Advanced Chemical Systems International | Organic amine/hydrogen fluoride etchant composition and method |
| US5698503A (en) | 1996-11-08 | 1997-12-16 | Ashland Inc. | Stripping and cleaning composition |
| DE19962136A1 (de) * | 1999-12-22 | 2001-06-28 | Merck Patent Gmbh | Verfahren zur Rauhätzung von Siliziumsolarzellen |
| RU2274615C2 (ru) | 2000-04-28 | 2006-04-20 | Мерк Патент Гмбх | Гравировальные пасты для неорганических поверхностей |
| JP2004503081A (ja) * | 2000-06-30 | 2004-01-29 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | シリコンウェーハのエッチング方法 |
| GB2367788A (en) * | 2000-10-16 | 2002-04-17 | Seiko Epson Corp | Etching using an ink jet print head |
| DE10241300A1 (de) * | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
| US20040188385A1 (en) * | 2003-03-26 | 2004-09-30 | Kenji Yamada | Etching agent composition for thin films having high permittivity and process for etching |
| AU2003901559A0 (en) | 2003-04-07 | 2003-05-01 | Unisearch Limited | Glass texturing method |
| WO2005036268A1 (ja) * | 2003-10-14 | 2005-04-21 | Asahi Denka Co., Ltd. | フォトレジスト組成物 |
| CN1950338B (zh) * | 2004-03-05 | 2012-05-16 | 霍尼韦尔国际公司 | 杂环胺的离子液体 |
| DE102005033724A1 (de) * | 2005-07-15 | 2007-01-18 | Merck Patent Gmbh | Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten |
| GB0608463D0 (en) * | 2006-04-27 | 2006-06-07 | Sericol Ltd | A printing ink |
| EP1918985B1 (en) * | 2006-10-31 | 2010-05-26 | S.O.I.TEC. Silicon on Insulator Technologies S.A. | Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition |
| US7582398B2 (en) * | 2007-06-13 | 2009-09-01 | Xerox Corporation | Inkless reimageable printing paper and method |
| JP4947654B2 (ja) * | 2007-09-28 | 2012-06-06 | シャープ株式会社 | 誘電体膜のパターニング方法 |
-
2010
- 2010-05-12 KR KR1020127000228A patent/KR20120036939A/ko not_active Ceased
- 2010-05-12 WO PCT/EP2010/002949 patent/WO2010139390A1/en not_active Ceased
- 2010-05-12 SG SG2011087863A patent/SG176274A1/en unknown
- 2010-05-12 EP EP10721703A patent/EP2438140A1/en not_active Withdrawn
- 2010-05-12 JP JP2012513486A patent/JP5801798B2/ja not_active Expired - Fee Related
- 2010-05-12 CN CN201080023477.1A patent/CN102449112B/zh not_active Expired - Fee Related
- 2010-05-12 US US13/375,812 patent/US8647526B2/en not_active Expired - Fee Related
- 2010-06-01 TW TW099117602A patent/TWI481693B/zh not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080121621A1 (en) * | 2005-01-11 | 2008-05-29 | Werner Stockum | Printable Medium for the Etching of Silicon Dioxide and Silicon Nitride Layers |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012529163A (ja) | 2012-11-15 |
| WO2010139390A1 (en) | 2010-12-09 |
| US20120085965A1 (en) | 2012-04-12 |
| US8647526B2 (en) | 2014-02-11 |
| CN102449112A (zh) | 2012-05-09 |
| CN102449112B (zh) | 2014-09-24 |
| KR20120036939A (ko) | 2012-04-18 |
| TW201116612A (en) | 2011-05-16 |
| EP2438140A1 (en) | 2012-04-11 |
| SG176274A1 (en) | 2012-01-30 |
| JP5801798B2 (ja) | 2015-10-28 |
| HK1169136A1 (en) | 2013-01-18 |
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