TWI480408B - Magnetron screening gun device - Google Patents
Magnetron screening gun device Download PDFInfo
- Publication number
- TWI480408B TWI480408B TW102135601A TW102135601A TWI480408B TW I480408 B TWI480408 B TW I480408B TW 102135601 A TW102135601 A TW 102135601A TW 102135601 A TW102135601 A TW 102135601A TW I480408 B TWI480408 B TW I480408B
- Authority
- TW
- Taiwan
- Prior art keywords
- magnetron sputtering
- gun device
- magnet
- target
- magnet region
- Prior art date
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
本發明係有關於一種磁控濺鍍槍裝置，尤指涉及一種具有增強薄膜與反應氣體之化合能力，且可增加鍍膜速率及靶材及薄膜厚度均勻性之磁控濺鍍槍裝置。 The present invention relates to a magnetron sputtering gun device, and more particularly to a magnetron sputtering gun device having the ability to enhance the bonding ability of a film and a reactive gas, and to increase the coating rate and the uniformity of the target and film thickness.
磁控濺鍍因成膜能量高，因此薄膜緻密且附著性好，已廣泛運用於各式薄膜之鍍製，然而磁控濺鍍在鍍製介電質材料時需要昂貴高頻電源供應或使用反應濺鍍，前者鍍膜速率慢且靶材昂貴易脆，而後者因使用反應濺鍍，所以會有薄膜與反應氣體化合能力差，而反應不完全造成吸收之缺點，除此之外磁控濺鍍之靶材使用率低，也常造成靶材之浪費。 Magnetron sputtering has high film forming energy, so the film is dense and has good adhesion. It has been widely used in the coating of various types of thin films. However, magnetron sputtering requires expensive high-frequency power supply or use when plating dielectric materials. Reaction sputtering, the former coating rate is slow and the target is expensive and brittle, while the latter uses reactive sputtering, so there is a defect that the film and the reaction gas have poor chemical combination, and the reaction does not completely cause absorption, and the magnetic control splashes. The use of plated targets is low and often results in waste of the target.
按，美國專利第4,162,954號，如第10圖所示，此專利揭露利用磁鐵傾斜排列且排列角度約在40°~60°之間，再加上磁鐵S與N極交互堆疊設計可增加靶材濺鍍蝕刻區均勻性。美國專利第5,262,028號，此專利中磁鐵排列如第11圖所示，其揭露在此排列下會形成上、下、左、右四個突出之磁力線曲線，如第11圖中之91、92、93、94，並在此四個磁力線曲線內形成一磁力線零點95，藉此設計下可增加靶材濺鍍蝕刻區均勻性。美國專利第5,282,947號，此專利揭露設計包含三種磁鐵，分別為邊磁鐵96、環磁鐵97、及中心磁鐵98，排列方式如第1 2圖所示，除此之外其邊磁鐵之強度為350~450高斯(Gauss)，中心磁鐵之強度為680~780gauss，環磁鐵之強度為1350~1450gauss，在此設計下可增加靶材濺鍍蝕刻區均勻性，且當旋轉此磁座更可增加濺鍍蝕刻區之均勻性。 According to U.S. Patent No. 4,162,954, as shown in Fig. 10, the patent discloses that the magnets are arranged obliquely and the arrangement angle is between 40° and 60°, and the magnet S and the N-pole are alternately stacked to increase the target. Sputter etch zone uniformity. U.S. Patent No. 5,262,028, in which the magnets are arranged as shown in Fig. 11, which reveals that the magnetic lines of the upper, lower, left and right protrusions are formed in this arrangement, as shown in Fig. 11, 91, 92, 93, 94, and a magnetic line zero 95 is formed in the four magnetic line curves, thereby increasing the uniformity of the target sputtering etch zone. U.S. Patent No. 5,282,947, the disclosure of which is incorporated herein by reference in its entirety in its entirety, the utility of the utility of the utility of the utility of In the figure 2, in addition, the strength of the side magnet is 350~450 Gauss, the intensity of the center magnet is 680~780gauss, and the strength of the ring magnet is 1350~1450gauss. Under this design, the target splash can be increased. The etched area is uniform and the uniformity of the sputter etched area is increased when the magnetic mount is rotated.
然而上述這些設計過於複雜且製造昂貴，後續維修也很困難，這些設計所使用之磁鐵往往係耐熱之磁鐵，如釤鈷磁鐵，或者係磁鐵浸泡在水中防止消磁，而這些磁鐵磁力不強且磁鐵浸泡在水中之設計都會減少磁場在靶材表面之強度，使得這些濺鍍槍在反應濺鍍中化合能力差，甚至無法鍍製鐵磁性材料。故，一般習用者係無法符合使用者於實際使用時之所需。 However, these designs are too complicated and expensive to manufacture, and subsequent maintenance is difficult. The magnets used in these designs are often heat-resistant magnets, such as samarium-cobalt magnets, or magnets that are immersed in water to prevent degaussing. These magnets are not magnetic and magnets. The design of the immersion in water reduces the strength of the magnetic field on the surface of the target, making these sputter guns poorly coupled in reactive sputtering, and even unable to plate ferromagnetic materials. Therefore, the general practitioners cannot meet the needs of the user in actual use.
本發明之主要目的係在於，克服習知技藝所遭遇之上述問題並提供一種具有增強薄膜與反應氣體之化合能力，且可增加鍍膜速率及靶材及薄膜厚度均勻性之磁控濺鍍槍裝置。 The main object of the present invention is to overcome the above problems encountered in the prior art and to provide a magnetron sputtering gun device having the ability to enhance the bonding ability of a film and a reactive gas, and to increase the coating rate and the uniformity of the target and film thickness. .
為達以上之目的，本發明係一種磁控濺鍍槍裝置，係包括一磁鐵銅座，具有一外圍磁鐵區、一中心磁鐵區、及一設置於該外圍磁鐵區與該中心磁鐵區之間之中空凹槽；一磁性元件，係以可拆卸式設置於該外圍磁鐵區與該中心磁鐵區；一導體元件，係以可拆卸式設置於該中空凹槽；一濺鍍靶材，係設置於該磁鐵銅座之上方；一靶材固定組件，係包覆該磁鐵銅座並固定該濺鍍靶材；以及一圓筒狀護罩，係包覆該靶材固定組件。 For the purpose of the above, the present invention is a magnetron sputtering gun device comprising a magnet copper holder having a peripheral magnet region, a central magnet region, and a magnetic field between the peripheral magnet region and the central magnet region. a hollow groove; a magnetic element is detachably disposed in the peripheral magnet region and the central magnet region; a conductor member is detachably disposed in the hollow groove; a sputtering target is disposed on Above the magnet copper seat; a target fixing assembly covering the magnet copper seat and fixing the sputtering target; and a cylindrical shield covering the target fixing assembly.
於本發明具體實施例中，該磁鐵銅座後方係設置有一冷卻水進入孔。 In a specific embodiment of the invention, a cooling water inlet hole is disposed behind the magnet copper seat.
於本發明具體實施例中，該外圍磁鐵區之磁性元件，其磁鐵強度為5400~6000高斯(Gauss)±20%。 In a specific embodiment of the invention, the magnetic component of the peripheral magnet region has a magnet strength of 5400 to 6000 Gauss ± 20%.
於本發明具體實施例中，更具有一濺鍍傾斜組件，係設置於該靶材固定組件之底部，用以提供一斜向延伸之傾度。 In a specific embodiment of the present invention, a sputter tilting assembly is further disposed on the bottom of the target fixing assembly for providing an obliquely extending inclination.
於本發明具體實施例中，該磁性元件係為複數同軸設置於該外圍磁鐵區與該中心磁鐵區之磁鐵。 In a specific embodiment of the invention, the magnetic component is a plurality of magnets coaxially disposed in the peripheral magnet region and the central magnet region.
於本發明具體實施例中，該外圍磁鐵區與該中心磁鐵區係包括複數呈環狀排列之通孔。 In a specific embodiment of the invention, the peripheral magnet region and the central magnet region comprise a plurality of through holes arranged in a ring shape.
於本發明具體實施例中，該導體元件係可為導熱、導電、或導磁材料。 In a particular embodiment of the invention, the conductor element can be a thermally conductive, electrically conductive, or magnetically permeable material.
於本發明具體實施例中，該導體元件係為高鐵磁性材料、低鐵磁性材料、或其合成材料。 In a specific embodiment of the invention, the conductor element is a high ferromagnetic material, a low ferromagnetic material, or a composite material thereof.
於本發明具體實施例中，該高鐵磁性材料係可選自鐵、鈷、鎳、或其合成材料。 In a particular embodiment of the invention, the high ferromagnetic material may be selected from the group consisting of iron, cobalt, nickel, or composite materials thereof.
於本發明具體實施例中，該低鐵磁性材料係可選自鋁、銅、銀、鋅、金、碳、鉛、鋁、鎂、鉑、鉻、錳、錫、釩、鎢、或其合成材料。 In a specific embodiment of the invention, the low ferromagnetic material may be selected from the group consisting of aluminum, copper, silver, zinc, gold, carbon, lead, aluminum, magnesium, platinum, chromium, manganese, tin, vanadium, tungsten, or a composite thereof. material.
(本發明部分) (part of the invention)
1‧‧‧磁鐵銅座 1‧‧‧Magnetic copper seat
11‧‧‧外圍磁鐵區 11‧‧‧External magnet area
111‧‧‧通孔 111‧‧‧through hole
12‧‧‧中心磁鐵區 12‧‧‧Center magnet area
121‧‧‧通孔 121‧‧‧through hole
13‧‧‧中空凹槽 13‧‧‧ hollow groove
14‧‧‧冷卻水進入孔 14‧‧‧Cooling water into the hole
2‧‧‧磁性元件 2‧‧‧Magnetic components
3‧‧‧導體元件 3‧‧‧Conductor components
4‧‧‧濺鍍靶材 4‧‧‧Splating target
41‧‧‧磁力線 41‧‧‧ magnetic lines
5‧‧‧靶材固定組件 5‧‧‧ Target fixing components
6‧‧‧圓筒狀護罩 6‧‧‧Cylinder shield
7‧‧‧濺鍍傾斜組件 7‧‧‧Splating tilting assembly
8‧‧‧基板 8‧‧‧Substrate
(習用部分) (customized part)
91、92、93、94‧‧‧磁力線曲線 91, 92, 93, 94‧‧‧ magnetic field curve
96‧‧‧邊磁鐵 96‧‧‧ side magnet
97‧‧‧環磁鐵 97‧‧‧ ring magnet
98‧‧‧中心磁鐵 98‧‧‧ center magnet
第1圖，係本發明磁控濺鍍槍之部分結構分解示意圖。 Fig. 1 is a partially exploded perspective view showing the magnetron sputtering gun of the present invention.
第2圖，係本發明之磁鐵銅座後視示意圖。 Fig. 2 is a rear view showing the magnet copper seat of the present invention.
第3圖，係本發明之磁鐵銅座與靶材固定組件之組裝示意圖。 Fig. 3 is a schematic view showing the assembly of the magnet copper seat and the target fixing assembly of the present invention.
第4圖，係本發明之圓筒狀護罩與濺鍍傾斜組件之組裝示意圖。 Figure 4 is a schematic view showing the assembly of the cylindrical shield and the sputter tilting assembly of the present invention.
第5圖，係本發明之非平衡濺鍍之磁鐵銅座結構示意圖。 Fig. 5 is a schematic view showing the structure of a magnet copper base of the non-equilibrium sputtering of the present invention.
第6圖，係本發明之非平衡磁力線示意圖。 Figure 6 is a schematic view of the unbalanced magnetic lines of force of the present invention.
第7圖，係本發明之氮化矽在不同非平衡濺鍍係數之穿透率示意圖。 Figure 7 is a graph showing the transmittance of tantalum nitride of the present invention at different non-equilibrium sputtering coefficients.
第8圖，係本發明之銅或鐵磁性材料之磁力線與傳統磁力線之比較示意圖。 Figure 8 is a schematic view showing a comparison of magnetic lines of force of a copper or ferromagnetic material of the present invention with conventional magnetic lines of force.
第9圖，係本發明之TiO2薄膜厚度均勻性示意圖。 Fig. 9 is a schematic view showing the thickness uniformity of the TiO 2 film of the present invention.
第10圖，係習用之磁控濺鍍裝置示意圖。 Figure 10 is a schematic diagram of a conventional magnetron sputtering device.
第11圖，係另一習用之磁控濺鍍裝置之磁力線曲線示意圖。 Figure 11 is a schematic diagram showing the magnetic field lines of another conventional magnetron sputtering device.
第12圖，係再一習用之磁控濺鍍裝置示意圖。 Figure 12 is a schematic view of another conventional magnetron sputtering apparatus.
請參閱『第1圖~第4圖』所示，係分別為本發明磁控濺鍍槍之部分結構分解示意圖、本發明之磁鐵銅座後視示意圖、本發明之磁鐵銅座與靶材固定組件之組裝示意圖、及本發明之圓筒狀護罩與濺鍍傾斜組件之組裝示意圖。如圖所示：本發明係一種真空中之磁控濺鍍槍裝置，用以濺鍍薄膜，此磁控濺鍍槍裝置包含一磁鐵銅座1、一磁性元件2、一導體元件3、一濺鍍靶材4、一靶材固定組件5、一圓筒狀護罩6及一濺鍍傾斜組件7所構成。 Please refer to FIG. 1 to FIG. 4, which are respectively a partial structural exploded view of the magnetron sputtering gun of the present invention, a rear view of the magnet copper seat of the present invention, and a magnet copper seat and target fixing assembly of the present invention. Assembly schematic diagram, and assembly diagram of the cylindrical shield and the sputter tilting assembly of the present invention. As shown in the figure: the present invention is a vacuum magnetron sputtering gun device for sputtering a film, the magnetron sputtering device comprises a magnet copper seat 1, a magnetic element 2, a conductor element 3, a splash The plating target 4, a target fixing assembly 5, a cylindrical shield 6 and a sputtering tilting assembly 7 are formed.
上述所提之磁鐵銅座1具有一外圍磁鐵區11、一中心磁鐵區12、及一設置於該外圍磁鐵區11與該中心磁鐵區12之間之中空凹槽13，且該外圍磁鐵區11與該中心磁鐵區12係包含複數呈環狀排列之通孔111、121，而該磁鐵銅座1後方另設置有一冷卻水進入孔14。 The magnet copper base 1 has a peripheral magnet region 11, a central magnet region 12, and a hollow recess 13 disposed between the peripheral magnet region 11 and the central magnet region 12, and the peripheral magnet region 11 and The central magnet region 12 includes a plurality of through holes 111 and 121 arranged in a ring shape, and a cooling water inlet hole 14 is further disposed behind the magnet copper seat 1.
該磁性元件2係以可拆卸式設置於該外圍磁鐵區11與該中心磁 鐵區12，為複數同軸設置於該外圍磁鐵區11與該中心磁鐵區12之通孔111、121內之磁鐵，且位於該外圍磁鐵區11之磁性元件2，其磁鐵強度為5400~6000高斯(Gauss)±20%。 The magnetic element 2 is detachably disposed in the peripheral magnet region 11 and the center magnetic The iron zone 12 is a plurality of magnets coaxially disposed in the peripheral magnet region 11 and the through holes 111, 121 of the central magnet region 12, and the magnetic component 2 located in the peripheral magnet region 11 has a magnet strength of 5400 to 6000 Gauss. (Gauss) ± 20%.
該導體元件3係以可拆卸式設置於該中空凹槽13內，可選擇導熱、導電或導磁佳之材料做替換，以增加該濺鍍靶材4使用率。於一具體實施例中，該導體元件3可為高鐵磁性材料、低鐵磁性材料、或其合成材料，其中該高鐵磁性材料係可選自鐵、鈷、鎳、或其合成材料，而該低鐵磁性材料係可選自鋁、銅、銀、鋅、金、碳、鉛、鋁、鎂、鉑、鉻、錳、錫、釩、鎢、或其合成材料。 The conductor element 3 is detachably disposed in the hollow recess 13 and may be replaced by a material that is thermally conductive, electrically conductive or magnetically conductive to increase the usage rate of the sputter target 4. In a specific embodiment, the conductor element 3 may be a high ferromagnetic material, a low ferromagnetic material, or a composite material thereof, wherein the high ferromagnetic material may be selected from the group consisting of iron, cobalt, nickel, or a composite thereof, and the low The ferromagnetic material may be selected from the group consisting of aluminum, copper, silver, zinc, gold, carbon, lead, aluminum, magnesium, platinum, chromium, manganese, tin, vanadium, tungsten, or composite materials thereof.
該濺鍍靶材4係設置於該磁鐵銅座1之上方，由該靶材固定組件5包覆該磁鐵銅座1並固定該濺鍍靶材4，再以該圓筒狀護罩6包覆該靶材固定組件5。 The sputtering target 4 is disposed above the magnet copper holder 1 , and the magnet holder 1 is covered by the target fixing unit 5 and the sputtering target 4 is fixed, and the cylindrical cover 6 is covered with the same. Target fixing assembly 5.
該濺鍍傾斜組件7係設置於該靶材固定組件5之底部，用以提供一斜向延伸之傾度。如是，藉由上述揭露之結構構成一全新之磁控濺鍍槍裝置。 The sputter tilting assembly 7 is disposed at the bottom of the target fixing assembly 5 to provide an obliquely extending inclination. If so, a novel magnetron sputtering gun device is constructed by the above disclosed structure.
請參閱『第5圖~第7圖』所示，係分別為本發明之非平衡濺鍍之磁鐵銅座結構示意圖、本發明之非平衡磁力線示意圖、及本發明之氮化矽在不同非平衡濺鍍係數之穿透率示意圖。如圖所示：當要進行反應濺鍍時，係將該磁性元件2裝在該外圍磁鐵區11及該中心磁鐵區12或只有該外圍磁鐵區11，且將該導體元件3裝在該中空凹槽13，如第5圖所示，並以非導磁性之紅銅為該導體元件3，可形成如第6圖所示之非平衡磁力線圖，遠離該 濺鍍靶材4之磁力線41會延伸至基板8，除了解離靠近該濺鍍靶材4之反應氣體，也可解離靠近該基板8之反應氣體，如此使薄膜化合反應較完全。本實施例以濺鍍氮化矽(鍍製非金屬)為例，如第7圖所示，圖中虛線代表本發明技術，可見藉著改變磁鐵強度及其排列方式可形成非平衡磁控濺鍍而增加薄膜化合反應，使穿透率增加，證明本發明之磁控濺鍍槍裝置係可增強薄膜與反應氣體之化合能力。 Please refer to FIG. 5 to FIG. 7 , which are schematic diagrams of the structure of the magnet copper base of the non-equilibrium sputtering of the present invention, the unbalanced magnetic line of the present invention, and the tantalum nitride of the present invention in different non-equilibrium splashes. Schematic diagram of the penetration rate of the plating coefficient. As shown in the figure, when reactive sputtering is to be performed, the magnetic component 2 is mounted in the peripheral magnet region 11 and the central magnet region 12 or only the peripheral magnet region 11, and the conductor member 3 is mounted in the hollow The groove 13 is as shown in FIG. 5, and the non-magnetic red copper is used as the conductor element 3, and an unbalanced magnetic field line diagram as shown in FIG. 6 can be formed, away from the The magnetic field lines 41 of the sputtering target 4 extend to the substrate 8, and the reaction gas close to the sputtering target 4 can be dissociated from the reaction gas close to the sputtering target 4, so that the thin film compounding reaction is complete. In this embodiment, sputtering tantalum nitride (plated non-metal) is taken as an example, as shown in FIG. 7, the broken line in the figure represents the technology of the present invention, and it can be seen that the unbalanced magnetron splash can be formed by changing the strength of the magnet and its arrangement. Plating increases the film formation reaction and increases the transmittance. It proves that the magnetron sputtering gun device of the present invention can enhance the compounding ability of the film and the reaction gas.
請參閱『第8圖及第9圖』所示，係分別為本發明之銅或鐵磁性材料之磁力線與傳統磁力線之比較示意圖、及本發明之TiO2薄膜厚度均勻性示意圖。如圖所示：當要增加靶材濺鍍蝕刻區均勻性時，導體元件則係一鐵磁性材料。於本實施例中，該導體元件亦可為銅或鐵磁性材料之比例組合，並以鉬靶材為靶材。如第8圖所示，圖中左側為本發明之磁力線圖，此時磁控濺鍍槍裝置可讓磁力線平行於靶材上方，相較右側傳統之磁力線圖，本發明係可增加靶材濺鍍蝕刻區均勻性，且在相同鍍膜功率及工作氣體下，有加鐵磁性材料之磁控濺鍍槍裝置可有較大之電漿濺鍍環及鉬膜厚，證明本發明之磁控濺鍍槍裝置係可增加鍍膜速率。 Please refer to FIG. 8 and FIG. 9 for a comparison of the magnetic lines of the copper or ferromagnetic material of the present invention with conventional magnetic lines, and a schematic diagram of the thickness uniformity of the TiO 2 film of the present invention. As shown in the figure: When the target sputtering etch zone uniformity is to be increased, the conductor element is a ferromagnetic material. In this embodiment, the conductor element may also be a combination of copper or ferromagnetic materials, and the molybdenum target is used as a target. As shown in Fig. 8, the left side of the figure is the magnetic field diagram of the present invention. At this time, the magnetron sputtering gun device can make the magnetic lines parallel to the top of the target, and the present invention can increase the target splashing compared with the conventional magnetic field diagram on the right side. Uniformity of the etched area, and under the same coating power and working gas, the magnetron sputtering device with ferromagnetic material can have a larger plasma sputter ring and molybdenum film thickness, which proves that the magnetron splash of the present invention The gun device increases the coating rate.
另外，為了膜厚均勻性，本發明係可進一步增加濺鍍傾斜組件7，如上述第4圖所示，此濺鍍傾斜組件7可斜向濺鍍氧化鈦(TiO2)膜，經實驗得知在適當磁控濺鍍槍裝置傾度時可達成良好之薄膜厚度均勻性，如第9圖所示，其均勻性在4吋基板上為(243.97-242.98)/(243.97+242.98)=0.2%，證明本發明之磁控濺鍍槍裝置係可增加薄膜厚度均勻性。 In addition, in order to uniformity of the film thickness, the present invention can further increase the sputtering tilting assembly 7. As shown in FIG. 4 above, the sputtering tilting assembly 7 can obliquely sputter a titanium oxide (TiO 2 ) film, which is experimentally obtained. It is known that a good film thickness uniformity can be achieved when the tilt of a suitable magnetron sputtering device is achieved. As shown in Fig. 9, the uniformity is (243.97-242.98) / (243.97 + 242.98) = 0.2% on the 4 吋 substrate. It is proved that the magnetron sputtering gun device of the present invention can increase the film thickness uniformity.
藉此，本發明優化此磁鐵銅座之設計，使得此磁控濺鍍槍裝置 具有增加鍍膜速率及增強薄膜與反應氣體化合之能力，也可鍍製鐵磁性材料，此磁鐵銅座之設計可方便拆卸濺鍍靶材及其中之強力磁鐵，此結構中之冷卻水路與強力磁鐵係為分離，可加長強力磁鐵之使用壽命也可保護強力磁鐵不會因高熱而消磁，而此濺鍍傾斜組件更可進一步增加薄膜厚度均勻性。 Thereby, the present invention optimizes the design of the magnet copper seat, so that the magnetron sputtering gun device It has the ability to increase the coating rate and enhance the combination of the film and the reaction gas. It can also be coated with ferromagnetic material. The magnet copper seat is designed to easily remove the sputtering target and the strong magnet in it. The cooling water channel and the strong magnet system in this structure For separation, the service life of the powerful magnet can be lengthened to protect the strong magnet from degaussing due to high heat, and the sputter tilting assembly can further increase the film thickness uniformity.
綜上所述，本發明係一種磁控濺鍍槍裝置，可有效改善習用之種種缺點，具有增加鍍膜速率及增強薄膜與反應氣體化合之能力，也可鍍製鐵磁性材料，可方便拆卸濺鍍靶材及其中之強力磁鐵，且此結構中之冷卻水路與強力磁鐵係為分離，可加長強力磁鐵之使用壽命也可保護強力磁鐵不會因高熱而消磁，更可進一步增加薄膜厚度均勻性，進而使本發明之產生能更進步、更實用、更符合使用者之所須，確已符合發明專利申請之要件，爰依法提出專利申請。 In summary, the present invention is a magnetron sputtering gun device, which can effectively improve various disadvantages of the conventional use, has the ability to increase the coating rate and enhance the combination of the film and the reaction gas, and can also be plated with a ferromagnetic material, which can be easily removed and splashed. The target material and the strong magnet in it, and the cooling water path in the structure is separated from the strong magnet, which can lengthen the service life of the strong magnet and protect the strong magnet from degaussing due to high heat, and further increase the thickness uniformity of the film. In order to make the invention more progressive, more practical, and more in line with the needs of the user, it has indeed met the requirements of the invention patent application, and filed a patent application according to law.
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍；故，凡依本發明申請專利範圍及發明說明書內容所作之簡單的等效變化與修飾，皆應仍屬本發明專利涵蓋之範圍內。 However, the above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto; therefore, the simple equivalent changes and modifications made in accordance with the scope of the present invention and the contents of the invention are modified. All should remain within the scope of the invention patent.
1‧‧‧磁鐵銅座 1‧‧‧Magnetic copper seat
11‧‧‧外圍磁鐵區 11‧‧‧External magnet area
111‧‧‧通孔 111‧‧‧through hole
12‧‧‧中心磁鐵區 12‧‧‧Center magnet area
121‧‧‧通孔 121‧‧‧through hole
13‧‧‧中空凹槽 13‧‧‧ hollow groove
2‧‧‧磁性元件 2‧‧‧Magnetic components
3‧‧‧導體元件 3‧‧‧Conductor components
4‧‧‧濺鍍靶材 4‧‧‧Splating target
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102135601A TWI480408B (en) | 2013-10-01 | 2013-10-01 | Magnetron screening gun device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102135601A TWI480408B (en) | 2013-10-01 | 2013-10-01 | Magnetron screening gun device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI480408B true TWI480408B (en) | 2015-04-11 |
| TW201514329A TW201514329A (en) | 2015-04-16 |
Family
ID=53437504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102135601A TWI480408B (en) | 2013-10-01 | 2013-10-01 | Magnetron screening gun device |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI480408B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109648852A (en) * | 2018-12-12 | 2019-04-19 | 河南筑诚电子科技有限公司 | A kind of 3D printer distal end charging magnetic adsorption extruder |
| TWI719368B (en) * | 2018-12-10 | 2021-02-21 | 財團法人國家實驗研究院 | High plasma density ion source device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI615494B (en) * | 2016-07-05 | 2018-02-21 | Closed high energy magnetron sputtering device for coating optical hard film and manufacturing method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5174880A (en) * | 1991-08-05 | 1992-12-29 | Hmt Technology Corporation | Magnetron sputter gun target assembly with distributed magnetic field |
| TWI295325B (en) * | 2005-06-14 | 2008-04-01 | Univ Nat Formosa | An apparatus to deposite a conductive film on the plastic substrate using radio frequency cosputting technology |
| TWM411432U (en) * | 2011-04-27 | 2011-09-11 | Eastern Sharp Ltd | Sputtering gun shielding member capable of improving target utilization rate |
| TWM436060U (en) * | 2012-05-04 | 2012-08-21 | Fortech Plastic Co Ltd | Magnetron sputtering machine with high power-factor pulse power supply |
| WO2013063616A1 (en) * | 2011-10-25 | 2013-05-02 | Intermolecular, Inc. | High metal ionization sputter gun |
| US20130156936A1 (en) * | 2011-12-14 | 2013-06-20 | Intermolecular, Inc. | Sputter gun having variable magnetic strength |
| TWI402370B (en) * | 2010-06-11 | 2013-07-21 | Ind Tech Res Inst | Method and apparatus for sputtering film containing high vapor pressure composition |
-
2013
- 2013-10-01 TW TW102135601A patent/TWI480408B/en active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5174880A (en) * | 1991-08-05 | 1992-12-29 | Hmt Technology Corporation | Magnetron sputter gun target assembly with distributed magnetic field |
| TWI295325B (en) * | 2005-06-14 | 2008-04-01 | Univ Nat Formosa | An apparatus to deposite a conductive film on the plastic substrate using radio frequency cosputting technology |
| TWI402370B (en) * | 2010-06-11 | 2013-07-21 | Ind Tech Res Inst | Method and apparatus for sputtering film containing high vapor pressure composition |
| TWM411432U (en) * | 2011-04-27 | 2011-09-11 | Eastern Sharp Ltd | Sputtering gun shielding member capable of improving target utilization rate |
| WO2013063616A1 (en) * | 2011-10-25 | 2013-05-02 | Intermolecular, Inc. | High metal ionization sputter gun |
| US20130156936A1 (en) * | 2011-12-14 | 2013-06-20 | Intermolecular, Inc. | Sputter gun having variable magnetic strength |
| TWM436060U (en) * | 2012-05-04 | 2012-08-21 | Fortech Plastic Co Ltd | Magnetron sputtering machine with high power-factor pulse power supply |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI719368B (en) * | 2018-12-10 | 2021-02-21 | 財團法人國家實驗研究院 | High plasma density ion source device |
| CN109648852A (en) * | 2018-12-12 | 2019-04-19 | 河南筑诚电子科技有限公司 | A kind of 3D printer distal end charging magnetic adsorption extruder |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201514329A (en) | 2015-04-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9991101B2 (en) | Magnetron assembly for physical vapor deposition chamber | |
| TWI480408B (en) | Magnetron screening gun device | |
| TWI443217B (en) | Design and use of dc magnetron sputtering systems | |
| US20090308739A1 (en) | Wafer processing deposition shielding components | |
| CN1737188A (en) | Anode for sputter coating | |
| US20130056347A1 (en) | Cooling ring for physical vapor deposition chamber target | |
| CN103987873B (en) | Sputtering unit, target and guard shield | |
| TW201321539A (en) | Cylindrical magnetron sputtering cathode | |
| US9754771B2 (en) | Encapsulated magnetron | |
| JP4933744B2 (en) | Multi-pole magnetron sputtering deposition system | |
| JP2011153373A5 (en) | Thin film forming equipment | |
| CN101550536A (en) | High-purity nickel target for magnetron sputtering | |
| JP5950866B2 (en) | Film forming apparatus and film forming method | |
| CN104968829B (en) | Sputtering device | |
| JP2006253200A (en) | Ring for etcher with excellent etching resistance | |
| RU121812U1 (en) | CATHODE-SPRAY ASSEMBLY OF MAGNETRON (OPTIONS) | |
| CN1648281A (en) | Arc coating deposition method and apparatus | |
| JP2008025001A (en) | Magnetron sputtering apparatus | |
| JP2009062568A (en) | Magnetron sputtering film deposition system | |
| TWI342342B (en) | Top shield for sputtering system | |
| JP2008127582A (en) | Composite type sputtering system and composite type sputtering method | |
| JP4412293B2 (en) | Sputtering equipment | |
| JP2004076160A (en) | Shielding apparatus | |
| CN105632855B (en) | A kind of magnetron and semiconductor processing equipment | |
| TW201113387A (en) | Coating device |