M411432 五、新型說明： 【新型所屬之技術領域】 本創作係為一種可提升靶材利用率之濺鍍槍遮件，尤指一種其靶材因 無遮件致使其金屬鑛料利用率過低之缺失，而使本創作可提升乾材之利用 '率’進而使本創作可達到減少材料浪費與降低成本之目的。 . 【先前技術】 • 叙賤鍍用之藏鍍搶系統，请參閱第一圖所示，其係包含一濺鍵搶11 籲與乾材I3及-將該乾材I3固定於該減鑛搶11上之固定架I4,該減鍵槍系 統經常使用於半導體之薄膜沉積（thin film deposition)製程中，請配 合參閱第二圖所示，其原理係於一真空腔體10内注入離子化（ionized)或 稱為電毁態之氣體如氬（Argon) ’並於濺鍵搶u與晶圓片12兩者之間施加 -電壓_成-電場’該電場可觸真雜體射的正離子如氬離子（紅+) 產生一作用力而使該正離子加速撞擊該濺鍍搶u上之靶材13，而可使該靶 材13上其金屬㈣15之原子受撞擊而向外雜，並朝該晶圓片攸方向移 ’動’而可於該晶則12上形成—金屬薄膜，而使賴麟祕可達到鍍膜 之功效。 請參閱第二圖所示，該習用之雜搶系統雖可達到鍵膜之功效，但固 疋該乾材13所用之固定架14通常係]非導磁，關·料製成，因此該固定架14 須设有固定孔141再以螺固等方式方能將㈣13固定於麵搶，因此乾 材13之組裝拆卸較為#時，請再配合參閱第三圖所示，當經過—定使用次 數及時間後，該乾材13其金屬鐘料15即會漸漸形成缺口，此時為了避免該 乾材13其金屬鑛料15被擊穿而造成該晶圓片12之鑛膜品質缺陷及良率降 3 M411432 低’即需先行更換新的靶材13 ’致使該乾材13其金屬鍍料15實際上被使用 的面積只有20%左右，導致該把材13其利用率過低，進而造成材料浪費與製 造成本提高’又’該m定架14僅能搭§&單_尺寸之稀13使用，而無法適 ‘用於其他較小尺寸之靶材13，進而導致其適用性非常有限。 是故，如何紅述等缺失純摒除，g卩為本細作人所欲解決之技術 困難點之所在。 【新型内容】 _ 有鑑於現有之麟搶系統’因該乾材之固定架係為非導磁性材料，因 此僅能以《等方式將树@定_傭上，t該婦其金屬顧經使用 而形成-定缺口後僅能更換整餘材，導致該乾材其利用率過低，進而造 成材料浪費與製造成本提高，因此本創作之目的在於提供一種可提升乾材 利用率之難搶遮件，藉由該遮件組尚包含有至少一第一遮件與至少一第 二遮件’該遮餘為高導磁性金屬财，而可透過更換不同遮件以延長該 祕之使用時間與次數，而可避免習用雜材因無遮件致使其金屬鑛料利 ，用率過低之缺失，進而使本創作可達到減少材料浪費與降低成本之目的。 為達成以上之目的，本創作係提供—種可提物材利用率之賤鑛搶遮 件，其包含： 一濺鍍搶，該濺鍍搶内設有至少一個第—磁性件； -遮件組，該遮雜·賊贿搶上方，又麵件組為高導磁性金 屬材質； 藉由該遮件組尚包含有至少-第-遮件與至少—第二遮件，該遮件电 為高導磁性缩f，㈣賴侧細恤叙使用時間與 4 1UT1 可避免％用其姆因無遮件致使其金屬雜棚率過低之缺失， 進而使本創作可達到減少嬉浪f與降低成本之目的。 【實施方式】 :胃審查貞方便簡捷瞭解本創作之其他賊内容與優點及其所達 成力效能夠更為顯現，兹將本創作配合附圖詳細說明如下： >閱第四圖、第五圖所示，本創作係提供—種可提升树利用率之 濺鍍搶遮件，其包含·M411432 V. New Description: [New Technology Field] This creation is a splash gun cover that can improve the utilization of target materials, especially a target whose material utilization is too low due to unshielded parts. The lack of this, so that this creation can improve the utilization of dry materials 'rate', so that this creation can achieve the purpose of reducing material waste and reducing costs. [Prior Art] • For the plating system used for the plating, please refer to the first figure, which includes a splash button to grab 11 and dry material I3 and - to fix the dry material I3 to the mine. The fixing frame I4 on the 11th, the key reduction gun system is often used in the semiconductor thin film deposition process, please refer to the second figure, the principle is to inject ionization into a vacuum chamber 10 ( Ionized) or a gas called an electrically destroyed state such as argon (Argon) and a voltage between the sputtering key and the wafer 12 - voltage _ into - electric field - the electric field can touch the positive ions of the real body If the argon ion (red +) generates a force to accelerate the impact of the positive ion on the target 13 on the sputtering, the atom of the metal (4) 15 on the target 13 is impacted and outwardly mixed, and Moving toward the wafer ' 'moving' can form a metal film on the crystal 12, so that Lai Lin secret can achieve the effect of coating. Referring to the second figure, although the conventional miscellaneous system can achieve the effect of the bonding film, the fixing frame 14 used for fixing the dry material 13 is usually made of non-magnetic, closed material, so the fixing The frame 14 shall be provided with a fixing hole 141 and then fixed by screwing or the like to fix the (four) 13 to the surface. Therefore, when the assembly and disassembly of the dry material 13 is more than #, please refer to the third figure as shown in the third figure. After the time, the dry material 13 of the metal material 15 will gradually form a gap. At this time, in order to avoid the breakdown of the dry metal 13 and the metal ore material 15, the quality and defect of the mineral film quality of the wafer 12 are caused. Drop 3 M411432 low 'requires replacement of the new target 13 ' first, so that the area of the dry material 13 whose metal plating 15 is actually used is only about 20%, resulting in the utilization rate of the material 13 is too low, thereby causing the material Waste and increased manufacturing costs 'again' The m-frame 14 can only be used with the singular size of the singular size, and cannot be used for other smaller sized targets 13, resulting in very limited applicability. Therefore, how to redeem the lack of pure redemption, g卩 is the technical difficulty to solve the problem. [New content] _ In view of the existing Lin grab system, because the fixed frame of the dry material is a non-magnetic material, it can only be used in the "etc." After forming a fixed gap, only the whole material can be replaced, resulting in the utilization rate of the dry material being too low, thereby causing material waste and manufacturing cost. Therefore, the purpose of the present invention is to provide an unobstructed improvement in the utilization of dry materials. The cover member further includes at least one first cover member and at least one second cover member. The cover is a high magnetic conductive metal, and the cover time can be extended to replace the secret use time and The number of times, can avoid the use of miscellaneous materials due to the lack of shielding, resulting in the loss of metal minerals, the use of too low, so that this creation can achieve the purpose of reducing material waste and reducing costs. In order to achieve the above objectives, the present invention provides a pick-and-place grab for the utilization of the material, which comprises: a sputter, which has at least one first magnetic member; The group, the cover and the thief grab the top, and the face piece group is a high magnetic conductive metal material; wherein the cover group further comprises at least a - a cover member and at least a second cover member, the cover member is The high-conductivity magnetic shrinkage f, (4) the use time of the thin-skinned shirt and the 4 1UT1 can avoid the lack of the low-metal shed rate caused by the use of its non-masking, thus enabling the creation to reduce the wave and f The purpose of cost. [Embodiment]: Stomach examination 贞 Convenient and simple to understand the content and advantages of other thieves of this creation and the effect achieved by it can be more obvious. The following is a detailed description of the creation and the following: > Read the fourth and fifth As shown in the figure, this creation provides a splash-proof cover that enhances tree utilization, including
一滴:锻搶3 ’該濺鑛搶 件31可為磁鐵’該濺渡搶3 32可為磁鐵； 3内設有至少-個第-磁性件31，該第-磁性 内設有至少一個第二磁性件32，該第二磁性件 —遮件組4，該遮件組4固設於賴_上方，又該遮件組*可為高 屬材質如鐵或録或鎳，該遮件組4與該賤锻搶3其第一磁性件^ 相吸固，又該遮件組4可為圓環或為圓板，該鱗組4尚包含有至少一第 遮件41與至少—第二遮件42，其巾該第二遮件&之外徑可小於該第一 遮件41之外徑； 一靶材5 ’ _材5設於賴麟3與遮倾4之間，又雜材5位於 該濺鍍搶3上； 請參閱第四圖、料圖穌，俾讀作麵綺5置胁賴鑛搶3 上’並將該遮件組4其第-遮件41置放於嶋5上時，藉由該遮件㈣ 為尚導雜麵㈣，碰該第-齡41可與軸_其第—磁性㈣ 相磁固’也即該第—餅41可緣材5猶搶3上請再配合參 閱第二圖難，谢_概輪㈣__刪繼其 5 勝Hi 432 金屬錄料51驗於該晶圓片12上，而使本創作可達到賴之功效又， 。月再配合參閱第七圖所示，當練材5使用_定次數或時曝，該乾材5 其金屬鑛料51上會形成第一缺口 511，請再配合參閱第八圖第九圖所示， 此時該操作者可將遮件组4其第一遮件41取下，並將該遮件組4其第二遮 件42置放於乾材5上，同時使該第二遮件42之位置與該金屬錢料η其第 、51之位置相對應，即可再繼續使用絲材5，直到該妹5其金屬 鑛料51上形成第二缺口 512為止，而如第九圖所示。 下： 請再參閱第四圖、第九圖所示，藉由該遮件組4尚包含有至少一第一 遮件41與至少-第二遮件42，該遮件组4為高導磁性金屬材質，而可透過 更換不同料峨長絲材5之使科_錄，轉射使本創作並金 屬娜1之細積提升至觀右，而可避免㈣其撕13因無遮件致 使其金屬_ 15 麵低之缺失，㈣提升本_其姆5之利用率， 進而使本創作可_減少材料㈣贿低成本之目的，又，再藉由該遮件 組4係以方式固定姆5,錢本解可兼具快逮崎拆祿材5之功 效’另’再藉由該遮件組4其第—遮件41與第二遮件犯大小可不相同， 而使該遮倾4可驗岭獨尺寸Α小之姆5，也林創柯適用於不 同尺寸大小之姆5’進而使本創作兼具可提升觸錄搶找適用性之功沁 為使本創作更加顯現出其進步性與實用性，兹與習用作-比較分析如 習用技術： 卜姆無遮件之設計，树之_率較低。 2、靶材組裝拆卸較費時。 6 M411432 3、濺鍍搶僅適用單一尺寸大小之靶材。 本創作優點： 1、 靶材具有遮件，可提升靶材之利用率。 2、 乾材組裝拆卻較快速。 3、濺鍍搶可適用不同尺寸大小之靶材。 【圖式簡單說明】 第一圖係為習用濺鍍槍之立體示意圖。 • 第二圖係為習用之動作示意圖。 第三圖係為習用其靶材利用率較低之示意圖。 第四圖係為本創作之立體分解示意圖。 第五圖係為本創作之立體組合示意圖。 第六圖係為本創作其靶材使用第一遮件之動作前示意圖。 第七圖係為本創作其靶材使用第一遮件之動作後側視示意圖。 第八圖係為本創作其靶材使用第二遮件之動作示意圖。 # 第九圖係為本創作可提升靶材利用率之示意圖。 【主要元件符號說明】 10…真空腔體 ll···濺鍍搶 12···晶圓片 13…靶材 14…固定架 141…固定孔 15…金屬鑛料 3…濺鍍槍 31…第一磁性件 32…第二磁性件 4…遮件組 41…第一遮件 42…第二遮件 5…乾材 51…金屬鍍料 511···第一缺口 512…第二缺口One drop: forging 3 'the splashing grab 31 may be a magnet 'the splash 3 3 may be a magnet; 3 is provided with at least one first - magnetic member 31, and the first magnetic portion is provided with at least one second a magnetic member 32, the second magnetic member-mask member group 4, the mask member group 4 is fixed above the ray _, and the mask group* can be a high genus material such as iron or nickel or nickel, the mask group 4 And the first magnetic member is sucked, and the cover group 4 is a ring or a circular plate, and the scale 4 further includes at least one first cover 41 and at least a second cover. The outer diameter of the second cover & can be smaller than the outer diameter of the first cover 41; a target 5'_5 is disposed between the Lai Lin 3 and the shading 4, and the miscellaneous material 5 is located on the splashing 3; please refer to the fourth picture, the material drawing, the reading of the face 绮5, the holding of the mine to grab 3 on the 'and the cover group 4 its first-mask 41 placed on the 嶋5, when the cover (4) is the guide surface (4), the first age 41 can be compared with the axis _ its first magnetic (four) phase magnetic solid 'that is, the first cake 41 can be 3 Please cooperate with the second picture, thank you _ _ wheel (four) __ delete the 5 win Hi 432 metal record 51 check in Wafer 12, so that this creation can achieve the effect. Referring to the seventh figure, when the material 5 is used for a certain number of times or when it is exposed, the dry material 5 will form a first gap 511 on the metal ore material 51. Please refer to the eighth figure in the eighth figure. In this case, the operator can remove the first cover 41 of the cover set 4 and place the second cover 42 of the cover set 4 on the dry material 5 while making the second cover The position of 42 corresponds to the position of the metal material η, the position of 51, and the wire 5 can be used again until the sister 5 forms a second gap 512 on the metal ore 51 thereof, as shown in the ninth figure. Show. Next: Please refer to the fourth figure and the ninth figure. The mask set 4 further includes at least one first cover 41 and at least a second cover 42. The cover set 4 is highly magnetically conductive. Metal material, and can be changed by changing the different materials of the filament material 5, and the transfer makes the creation of the creation and the metal product 1 to the right, and can avoid (4) the tearing 13 is caused by the unshielded The metal _ 15 face is missing, (4) the use of the _ _ _ 5, so that the creation can _ reduce the material (four) bribe low cost, and then by the cover group 4 to fix the gram 5 , the money solution can have the effect of quickly catching the smashing of the slab 5 'other' and then by the cover group 4, the first cover 41 and the second cover can be different in size, and the slanting can be The ridge is the size of the small 5 之 5, and Lin Chuangke is suitable for different sizes and sizes. This makes the creation both improve the applicability of the record and make the creation more progressive. And practicality, and used as a comparison - comparative analysis such as the use of technology: Bum unmasked design, the tree _ rate is low. 2. Target assembly and disassembly are time consuming. 6 M411432 3. Splashing is only suitable for single size targets. The advantages of this creation: 1. The target has a cover to improve the utilization of the target. 2, dry material assembly and disassembly is faster. 3, sputtering can be used for targets of different sizes. [Simple diagram of the diagram] The first diagram is a three-dimensional diagram of a conventional sputtering gun. • The second picture is a schematic diagram of the action taken. The third figure is a schematic diagram of the lower utilization rate of the target. The fourth picture is a three-dimensional exploded view of the creation. The fifth picture is a three-dimensional combination diagram of the creation. The sixth figure is a schematic diagram of the action before the use of the first cover for the creation of the target. The seventh figure is a schematic side view of the action of using the first cover member for the creation of the target. The eighth figure is a schematic diagram of the action of using the second cover for the target. # The ninth figure is a schematic diagram of the creation of the target to improve the utilization of the target. [Description of main component symbols] 10...vacuum cavity ll···sputtering grab 12·· wafer 13...target 14...fixing frame 141...fixing hole 15...metal mineral material 3...sputter gun 31... A magnetic member 32...a second magnetic member 4...a cover member 41...a first cover member 42...a second cover member 5...a dry material 51...a metal plating material 511···first notch 512...second gap