Ϊ295325 ί 九、發明說明： 【發明所屬之技術領域】 #本發明係-種射頻共濺鑛方式沉積製造塑膠基板導電膜之 :“特種错由氧化銦糾材與氧化軸材錢錢而 、、猎由射頻共滅鑛系統，以半導體中推雜方式提高氧化鋼錫 透明導電膜的導電特性，並藉助共顧時沉積條件的改變，於 制透明導電膜的材料與光學特性。 【先前技術】 β過去數十年中陰極射線管主宰顯示器及電視機的市場，但 疋陰極射線s ’重$過重、體積龐大的缺點已成為它的致命傷。 為因應視覺享受的大面積化要求及可攜帶性的輕便化要求，新 的平面顯示器技術陸續被開發出來，例如液晶平面顯示器、電 κ平、有機/無機發光平面顯示器等，除了發光層本身 的差異外’為了維持顯示器元件光波輸出時在可見光波段具有 較佳的穿透率，以及優異的導電特性與載子注入效果，必須採 用兼具較佳的可見光穿透率（>_以及較低電阻率（〜1〇-4 Ω-⑷的電極材料，而在諸多具備低電阻率的材料中，透明導 電膜八有相田良好的可見光穿透率，因此，透明導電膜成為完 成現7各種新型平面顯示器元件中不可或缺的電極材料。 一般常使用的透明導電材料中有氧化銦錫（祕 de ITO)氧化鋅（zlnc〇xide; Zn〇)、氧化铭鋅（ai — num ⑽⑽此；AZ〇)以及氧化銦鋅（indium zinc oxide ; IZO) ^295325 等材料，其中乳化銘辞以及氧化銦鋅通常可以獲得較佳的導電 特n ’然而製作過程較繁雜且昂貴，氧化鋅材卿然容易取得， L、v電特錄差，因此，考量製程成本以及透明薄膜的導電 特性，氧化銦錫透明導電薄膜成為產業界最常使用的透明導電 電極材料，其薄膜導電性藉由適當溫度熱處理後（1GGT〜350 -通#可以達到5〜8 Ω em，而其製作透明導電膜的方式包 含熱蒸錢、濺鍵、電子束蒸錢、脈衝雷射沉積、溶膠凝膠、以 及化學氣相沉積法等等。 其中，化學氣相沉積法雖然可以沉積出結晶特性較佳的氧 化銦錫透明導電膜，然而其製程溫度大多大於·。以薄膜電阻 率在製程溫度45代環境下為h8 x ir Qcm)，而溶璆凝膠 法製作方式較為簡單且成本低廉，但是所沉積的氧化銦錫薄膜 電阻率與結晶性普遍不佳’目前產f界仍以錢技術以及賤鐘 技術為主要沉積氧化銦錫透明導電膜的方式，其中蒸鍍技術以 電子搶蒸錢法可以在低溫環境下（〜15『c)獲得較低的薄膜電 阻率（4.4 X ΙΟ-5 Qcm在基板溫度為3〇〇。〇，然而對於可撓式 土板而。&法承文如此兩的溫度’因此’近來以脈衝雷射蒸 H在沉積薄膜同時以短波長脈衝雷射針對薄膜進行熱處 理’但是由於脈衝雷射只能對某一小區域進行薄膜熱處理，較 …、法應用在可撓式顯示器所需大面積且均勻性佳的透明導電薄 膜0 1295325 + 4此可見’上述習㈣品財諸多缺失，實非—良善之設 s十者，而亟待加以改良。 本案創作人為了獲得較均勻且平整的透明導電薄膜，維持 顯不器元件的穩定性與操作特性，乃亟思加以改良創新，並經 多年苦心孤言旨潛心研究後，終於成功研發完成本件一種射頻共 濺鍍方式沉積製造塑膠基板導電膜之裝置。 【發明内容】 本發明之目的即在於提供一種利用氧化鋼錫乾材與氧化辞 靶材，、/賤鑛方式，在室溫環境下於塑膠基板上沉積在可見光波 段具有高穿透率之透明導電薄膜的裝置。 本發明之次一目的係在於藉由共濺鍍參數控制，可以在塑 膠基板上沉積具有特性不同的透明導電薄膜。 本發明之另一目的係在於提供一種以多層膜沉積方式，在 塑膠基板上沉積具有特定功能的光電薄膜。 本發明之又一目的係在於提供一種室溫下於可撓式塑膠基 板上沉積具備低電阻率（〜1〇-4Qcm )、高可見光穿透率（>_ (400 nm ?〇〇 nm))、以及高薄膜均勻性的透明導電電極之塑 膠基板。 可達成上述發明目的之一種射頻共濺鍍方式沉積製造塑膠 基板導電膜乏裝置，係以氧化銦錫及氧化辞靶材為共濺鍍靶 材’其中用以將氧化銦錫靶材與氧化鋅靶材同時濺鍍沉積透明 1295325 導電膜於可挽式塑膠基板的共濺鍵裝置，其主要包含： 一錢鑛腔體，其内設二擋板及一冷卻水循環通過以維持腔 體環境溫度的承載台，且該承載台係可旋轉； 、 一磁控式濺鍍槍，係供靶材放置以及提供射頻濺鍍功率變 ，動後，控制革巴材濺鐘速率的變化，並將透明導電膜沉積在塑膠 基板上； 串聯電源供應組，係可分別控制兩磁控式濺鑛槍同時沉 " 積，而不至於互相干擾，包括有：二電源供應器，係相位相等， 其可供控制輸出功率，以提供磁控式濺鍍搶在不同製程條件 下，分別控制兩個靶材在塑膠基板上的沉積速率；二功率匹配 - 箱，係與磁控式濺鍍搶及電源供應器連接，可以調整維持最低 的反射功率，以維持施加在磁控式濺鑛槍上的濺錄功率； 一真空幫浦組，係與錢鑛腔體相互連通，並能將濺錢腔體 中氣體全部抽取至真空狀態，包括有：一旋轉柱塞幫浦，係食匕 動作將腔體中氣體粗抽至低真空狀態；一渦輪分子幫浦，該幫 浦係於動作後能將腔體中氣體細抽至高真空狀態；三開關閥， 係連通於濺鍍腔體與幫浦之管路上； 一氣體供應組，係以管路連接該濺鍍腔體，再以氣體流量 控制器控制產生電漿之氣體進入濺鍍腔體之流量； 該塑膠基板於置入濺鍍腔體後，先以旋轉柱塞幫浦對賤梦 腔體進行粗抽，待腔體内壓力小於4 Pa時，再以渦輪分子幫浦· 1295325 進行細抽，直到濺鍍腔體内壓力小於2.66χ1〇_4 pa以下，通入 產生電漿之氣體氬氣15sccm進人濺鍍腔體後，利用―串聯且可 以分別提供兩磁控式雜搶不同射頻功率之兩組電源供應器控 、制二磁控式㈣搶麟功率，並㈣功率㈣箱上之反射功 *率，分別以50W的射頻功率進行預濺射5分鐘，之後調整二磁 控式濺鑛腔所需的射頻賤鍍功率參數於兩組電源供應器，移開 擋板’使二磁控式滅鍍搶開始將氧化銦錫乾材與氧化辞乾材施 加不同的射頻滅鑛功率’以提供兩個乾材以不同的沉積速率， 膜於塑膠基板’進而調變沉積薄膜的鋅原子與銦原子的沉積比 率為（Zn / (Zn + In) at%)，達到以共賤鑛推雜方式在可繞式 塑膠基板上沉積特性不同的透明導電膜，而該氧化姻錫崎鱼 氧化鋅乾__功率分別為⑽以75 Η即鋅原子盘鋼 原子的沉積比率為（Zn/(Zn + In)an36M，^ 得具有最佳導電特性與均勾又 处乃导電膜，其薄膜電阻率盥 :粗糙度分別約為3.69x1〜“22m,而單獨： ，鐘功率為15G 施加在氧化铟絲材上 上所沉積的氧化鈿雜、悉M； 祝八暴板 分別約為"6X1。、 其薄膜電阻率與表面粗糖度則 • X 1 υ Ωοπι 以 >5 9 · nm，如此，即可在_ BE 基板上沉積具有特性不同的透明導電薄膜。 在轉 【實施方式】 睛參閱圖一及圖二，本 物共之一種射頻共賤鑛方式· J295325 沉積製造塑膠基板導電膜之裝置，該共漉鍍系統主要包括有： —濺鑛腔體卜二磁控式濺鍍搶21，22、—串聯且可以分別提供 二磁控式μ槍不同射頻功率之二電源供應器31，32、二功率匹 配箱41,42、-旋轉柱塞幫浦8卜一渴輪分子幫浦82以及氣體 流量控制器9。 該濺鐘腔體卜其内設有二撞板13及—冷卻水12通過以 維持_腔體1中承載台u的溫度為室溫狀態，且該承載台n 係可旋轉’以提供塑膠基板5於減鍍時之均句度；二磁控式賤 鍵槍21，22,係絲材放置以及提供射頻濺鍍功率變動後，姆 賤鑛速率的變化，並將透明導電膜沉積在塑膠基板5上； -串聯電源供應組’係可分別控制兩磁控式雜搶 同時沉積’而不至於互相干擾，包括有：二電源供應^ 31，32, 係相位相等’其可供控制輸出射頻功率’以提供磁控式賤鐘搶 21’ 22在不同製程條件下，分別控制兩個乾材在塑膠基板5上的 /儿積速率，一功率匹配箱41，42，係與磁控式濺鍍槍Μ，&及電 源供應器31，32連接，可以調整㈣最低的反射功率，以維持 施加在磁控式濺鍍搶21，22上的濺鍍功率； -真空幫浦組’係錢鍍腔體14目互連通，並能將賤鑛腔 體1中氣體全部抽取至真空狀態，包括有：—旋轉柱塞幫浦81， 係將錢鍍腔體1中空氣粗抽至低真空狀態（真空度小於4⑻； 接著渦輪分子幫浦82,係再將濺鍍腔體i中的真空度細抽至 1295325 2. 66 χ l〇 pa以下，二開關閥83，係連通於濺鍍腔體1與幫 浦之管路上； -氣體供應組’係以管路連接該㈣腔體i，相氣體流 ϊ控制器9控制產生電漿之氣體進人濺鐘腔體}之流量； 首先將清潔過的塑膠基板5,放入賤鍵腔體i中，控制電 源供應器31，32的輸出功率，在不同製程條件下，單獨沉積氧 化銦錫或氧化鋅薄膜在塑膠基板5上，結果顯示，在本發明中 愚製程壓力為L 33 Pa、通入氬氣體流量為Η⑽、僅開啟電 源供應器3卜單獨沉積氧化銦錫透明導電膜，當電源供應器犯 達到150 W時，在室溫下所沉積的氧化銦錫薄膜具有最低的電 阻率（P〜1·96 X 10-3 Ω cm)，當製程壓力為1·33 Pa、通入 氬氣體流量為15 SCCffl、僅開啟電源供應器3卜單獨沉積氧化 銦錫透明導電膜，在室溫下所沉積的氧化鋅薄膜的薄膜電阻率 則相當大。 因在室溫下沉積的氧化銦錫薄膜電阻率過大，故，較不適合 =為可撓式顯示器的透明導電電極，為了克服氧化銦錫薄膜: 膠基板5上（塑膠基板5不加熱且不經熱處理製程） 2㈣高的缺點’本發明提出洲氧化銦_材6以及氧化辞 7共濺鍍方式以降低透明導電膜的電阻率。 ^述為射頻共滅鑛沉積製造塑膠基板導電膜其較佳實施例 '’主要包括以下步驟： 11 1295325 (A)至少一塑膠基板以清潔劑清洗乾淨，並經超音波震盪 分鐘，隨即以氮氣完整吹乾塑膠基板； (B)該塑膠基板置人騎腔體，經旋轉柱塞幫浦對濺錢腔體進 行粗抽，待腔體内壓力小於4 Pa時，再以渦輪分子幫浦 進行細抽，直到濺鍍腔體内壓力小於2·6βχ1(Γ4 pa以下· 〔C)通入產生電漿之氣體氬氣π%⑽進入濺鑛腔體； (D) 啟動電源供應器之射頻功率，並調整功率匹配箱維持最低 的反射功率，轉持施加在二雜錢鍍搶的_鍍功率分 別為50W的射頻功率進行預濺射5分鐘；' (E) 設定電源供應HL力率，並調整功率匹配箱維持最低 的反射功率’以維持施加在氧化銦錫靶材與氧化鋅靶材二 磁控式難搶所需的射頻_功率，移開擋板，二磁控式 _搶開始將氧化銦錫峨氧化獅之材料同時錢 射於塑膠基板；以及 電源供應器，並對濺鍍腔體 並以氮氣氣體破真空，取 (F)鍍膜結束，關閉功率匹配箱及 進行細抽，其後再關閉開關閥 出塑膠基板。 其:佳實施例在共，首先建立單獨氧化銦 鋅薄膜在製程虔力為1爲、通入氬氣體流量為15 選取 頻 :ccm條件下的沉積速率’其沉積速率圖如圖三所示。接著巧 氧化銦錫薄膜在圖中且古田江 、 α中具有取低缚膜電阻率的沉積速率（即射 12 1295325 濺鍍功率為l5〇 w時 6^+4s 知速率），且同時變動氧化鋅靶材6上 的射頻濺鍍功率，诗u u 〒祀材6上 達到共濺鍍摻雜的目的（共 靶材6與氧化鋅靶材7 戈鍍化氧化銦錫 ‘ ,n 對應的射頻濺鍍功率以及的濺鲈夂數 如圖六所示）。此外 J我鑛荼數 . ’由於射頻濺鍍系統的薄膜沉積方式為物踩 沉積法，所沉穑的屮八 、式為物理 、、成刀比與電漿所轟擊的革材相杏 藉由氧化銦錫靶材… 材相田近似，因此， 錫革巴材6與氧轉μ 7在不同 沉積速率比，即可推佔处店 、刀半所對應的 P了推估鋅原子以及銦原子 十⑷爾，請參閱圖七。 (Zn/(Zn #的例以氧化銦錫Μ 6與氧化辞㈣才7共騎所 =:電薄膜後’分別再以霍爾量測㈤一 ^ 糸統測罝该溥膜之電特 率、載子;辰度以及载子移 )以及可見光-紫外光光譜儀量（肝-ns speCtr__meter )量測薄膜的可見光穿透率，並 微鏡（at⑽icf〇rcem〗Vr Γ卞刀”、、貝 〇SCOPy , AFM)觀察薄膜表面粗糙度， 尋求具有最低電阻率、最佳可見光穿透率以及平整度的透 電膜材料。 如圖四所示，為利用上述條件下以共減鑛方式在塑膠基板 5上沉積透明導電膜的相關電特性量測結果，從圖中結果發現， 在漉鑛氧化銦锡革巴材6時，同時共錢鑛氧化辞革巴材？作為摻雜 材料，當施加在氧化鋅乾材7功率為5"〜15"之間（相對 應估算鋅原子與銦料（Zn/(Zn+In)at%)tt_26〜47 13 1295325 %)時，以共濺鍍方式所 領W处/3 ¥冤膜電阻 化銦錫薄膜導電性（ +季 乂早獨的乳 1·96 X 1〇 3 Q cm)明顯 化銦錫靶材6與氧化辞 ^ §乳 嶋w時(估曾之ζ _射頻機鑛功率分別細 了、怙·-之 Zn / (Zn + In) at% 〜Ϊ295325 ί 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九 九Hunting is carried out by the radio frequency common demineralization system, and the conductive property of the transparent conductive film of the oxidized steel tin is improved by the semiconductor miscellaneous method, and the material and optical characteristics of the transparent conductive film are made by changing the deposition conditions at the same time. β In the past few decades, cathode ray tubes dominated the market for displays and televisions, but the drawbacks of cathode ray s 'heavily weighty and bulky have become fatal injuries. In response to the large-scale requirements and portability of visual enjoyment. Lightweight requirements, new flat panel display technology has been developed, such as liquid crystal flat panel display, electric κ flat, organic/inorganic light-emitting flat panel display, etc., in addition to the difference of the luminescent layer itself, in order to maintain the light output of the display component in the visible light band With better penetration, excellent electrical conductivity and carrier injection, it must be better Visible light transmittance (>_ and lower resistivity (~1〇-4 Ω-(4) electrode material, and among many materials with low resistivity, the transparent conductive film has good visible light transmittance. Therefore, the transparent conductive film has become an indispensable electrode material for various types of new flat panel display elements. Among the commonly used transparent conductive materials, there are indium tin oxide (zinc de) zinc oxide (zlnc〇xide; Zn〇), Oxidation of zinc (ai - num (10) (10); AZ 〇) and indium zinc oxide (IZO) ^ 295325 and other materials, of which emulsified inscriptions and indium zinc oxide can usually obtain better conductivity special n ' However, the production process It is more complicated and expensive, and the zinc oxide material is easy to obtain. L and v are particularly poorly recorded. Therefore, considering the process cost and the conductive properties of the transparent film, the indium tin oxide transparent conductive film has become the most commonly used transparent conductive electrode material in the industry. The film conductivity is heat treated by a suitable temperature (1GGT~350-pass# can reach 5~8 Ω em, and the way of making transparent conductive film includes hot steaming, splashing, electron beam steaming Money, pulsed laser deposition, sol-gel, chemical vapor deposition, etc. Among them, chemical vapor deposition can deposit an indium tin oxide transparent conductive film with better crystal characteristics, but the process temperature is mostly greater than The film resistivity is h8 x ir Qcm in the 45-generation process temperature, while the lyophilized gel method is simpler and cheaper, but the deposited indium tin oxide film is generally poor in resistivity and crystallinity. At present, the production of the f world still uses the money technology and the cuckoo clock technology as the main way to deposit the indium tin oxide transparent conductive film, wherein the evaporation technology can obtain the lower film in the low temperature environment (~15 "c) by the electronic rushing method. Resistivity (4.4 X ΙΟ -5 Qcm at substrate temperature of 3 〇〇. Oh, but for flexible soil. The temperature of the law is such that the temperature of the two is so close to the thin film pulsed laser at the same time as the thin film pulsed laser for heat treatment of the film 'but the pulse laser can only perform thin film heat treatment on a small area, Compared with the method, the method is applied to the transparent conductive film with large area and uniformity required for the flexible display. 0 1295325 + 4 This can be seen that the above-mentioned Xi (four) wealth is lacking, it is not good - the good setting is ten, and it is urgent to be Improvement. In order to obtain a more uniform and flat transparent conductive film, the creator of this case maintains the stability and operational characteristics of the display device. It is a thought of improvement and innovation, and after years of painstaking research, finally succeeded in research and development. A device for depositing a conductive film of a plastic substrate by RF co-sputtering. SUMMARY OF THE INVENTION The object of the present invention is to provide a transparent coating with a high transmittance of visible light in a visible light source on a plastic substrate by using an oxidized steel tin dry material and an oxidized target material, or a bismuth ore plating method. A device for conducting a film. A second object of the present invention is to deposit a transparent conductive film having different characteristics on a plastic substrate by control of co-sputtering parameters. Another object of the present invention is to provide a photovoltaic film having a specific function deposited on a plastic substrate by a multilayer film deposition method. Another object of the present invention is to provide a low resistivity (~1〇-4Qcm) and a high visible light transmittance (>_(400 nm ?〇〇nm) deposited on a flexible plastic substrate at room temperature. ), and a plastic substrate with a transparent conductive electrode with high film uniformity. A radio frequency co-sputtering method for depositing and manufacturing a conductive substrate for a plastic substrate, which is an indium tin oxide and an oxidized target as a common sputtering target, wherein the indium tin oxide target and the zinc oxide are used. The target simultaneously sputters and deposits a transparent 1295325 conductive film on a pull-off plastic substrate. The main components include: a money mine cavity with two baffles and a cooling water circulating to maintain the ambient temperature of the cavity. a carrying platform, and the carrying platform is rotatable; a magnetically controlled sputtering gun is provided for the target to be placed and provides power conversion of the RF sputtering, and after the movement, the change of the speed of the splashing of the leather material is controlled, and the transparent conductive is The film is deposited on the plastic substrate; the series power supply group can separately control the two magnetron splash guns while sinking, and not interfere with each other, including: two power supplies, the phases are equal, and they are available Control the output power to provide magnetron sputtering to control the deposition rate of two targets on the plastic substrate under different process conditions; two power matching - box, system and magnetron sputtering The source supply connection can be adjusted to maintain the lowest reflected power to maintain the splatter power applied to the magnetron splash gun; a vacuum pump group is interconnected with the money chamber and can be splashed The gas in the body is all pumped to a vacuum state, including: a rotating plunger pump, the food action is to pump the gas in the cavity to a low vacuum state; a turbo molecular pump, the pump can be used after the action The gas in the chamber is finely pumped to a high vacuum state; the three-switch valve is connected to the pipeline of the sputtering chamber and the pump; a gas supply group is connected to the sputtering chamber by a pipeline, and then the gas flow controller Controlling the flow rate of the plasma-generating gas into the sputtering chamber; after the plastic substrate is placed in the sputtering chamber, the rotating cavity plunger is used to rough the nightmare cavity, and the pressure in the cavity is less than 4 Pa. At the same time, the turbo molecular pump 1295325 is finely pumped until the pressure in the sputtering chamber is less than 2.66χ1〇_4 Pa, and the gas argon gas 15sccm is introduced into the sputtering chamber. In series and can provide two magnetron-type robbing The two sets of power supply of the RF power control, the two magnetic control type (four) grab the Lin power, and (4) the power (four) box on the reflective power rate, pre-sputtering with 50W RF power for 5 minutes, then adjust the two magnetron The RF 贱 plating power parameters required for the splashing of the mine are in the two sets of power supply, and the baffle is removed to make the two magnetically controlled galvanizing and squeezing start to apply different radio frequency annihilation to the indium tin oxide dry material and the oxidized dry material. The power 'to provide two dry materials at different deposition rates, the film on the plastic substrate' and then the deposition ratio of zinc atoms to indium atoms of the deposited film is (Zn / (Zn + In) at%) The mine push-and-paste method deposits a transparent conductive film with different characteristics on the wraparound plastic substrate, and the oxidized sulphur-salted fish zinc oxide dry __ power is (10) with a deposition ratio of 75 Η, that is, a zinc atomic disk steel atom (Zn) /(Zn + In)an36M, ^ has the best conductive properties and is evenly conductive film, its film resistivity 盥: roughness is about 3.69x1 ~ "22m, and alone:, clock power is 15G Oxide oxide deposited on the indium oxide wire, M; Violent plates are approximately " 6X1. The film resistivity and surface roughness are • X 1 υ Ωοπι with > 5 9 · nm, so that a transparent conductive film with different characteristics can be deposited on the _ BE substrate. In the [Embodiment] Eyes refer to Figure 1 and Figure 2, this is a kind of radio frequency bismuth mining method · J295325 deposition of plastic substrate conductive film device, the bismuth plating system mainly includes: - splashing cavity Magnetron sputtering is 21,22,-series and can provide two magnetically controlled μ guns with different RF powers. Two power supplies 31,32, two power matching boxes 41,42,-rotating plunger pump 8 A thirsty wheel molecular pump 82 and a gas flow controller 9. The splashing bell cavity is provided with two collision plates 13 and cooling water 12 for maintaining the temperature of the bearing platform u in the cavity 1 at room temperature, and the carrier n is rotatable to provide a plastic substrate 5 in the uniformity of the plating; two magnetically controlled 贱 key guns 21, 22, the wire placement and the change of the RF sputtering power, the change of the rate of the strontium ore, and the deposition of the transparent conductive film on the plastic substrate 5; - series power supply group 'series can control two magnetron-type hybrids simultaneously to deposit 'without mutual interference, including: two power supply ^ 31, 32, the phase is equal' it can control the output RF power 'To provide a magnetically controlled cuckoo clock to grab 21' 22 under different process conditions, respectively control the rate of two dry materials on the plastic substrate 5, a power matching box 41, 42, with magnetically controlled sputtering Guns, & and power supply 31, 32 connections, can adjust (four) the lowest reflected power to maintain the sputtering power applied to the magnetron sputtering 21, 22; - vacuum pump group 'money plating The cavity 14 is interconnected and can extract all the gas in the strontium ore chamber 1 to a vacuum Including: - Rotary plunger pump 81, the air in the plating chamber 1 is roughly pumped to a low vacuum state (vacuum degree is less than 4 (8); then the turbo molecular pump 82, will be in the sputtering chamber i The vacuum is finely pumped to 1295325 2. 66 χ l〇pa, the second switching valve 83 is connected to the pipeline of the sputtering chamber 1 and the pump; the gas supply group is connected by the pipeline to the (four) cavity i , the phase gas flow controller 9 controls the flow of the plasma generating gas into the splashing chamber cavity; first, the cleaned plastic substrate 5 is placed in the key cavity i, and the power supply 31, 32 is controlled. Output power, under different conditions, separate deposition of indium tin oxide or zinc oxide film on the plastic substrate 5, the results show that in the present invention, the process pressure is L 33 Pa, the flow rate of the argon gas is Η (10), and only the power is turned on. The supplier 3 separately deposits an indium tin oxide transparent conductive film. When the power supply is 150 W, the indium tin oxide film deposited at room temperature has the lowest resistivity (P~1·96 X 10-3 Ω). Cm), when the process pressure is 1.33 Pa, the flow rate of argon gas is 15 SCCffl, only The indium oxide tin transparent conductive film is separately deposited from the power supply device 3, and the film resistivity of the zinc oxide film deposited at room temperature is quite large. Since the indium tin oxide film deposited at room temperature has an excessive resistivity, Less suitable = transparent conductive electrode for flexible display, in order to overcome the indium tin oxide film: on the plastic substrate 5 (the plastic substrate 5 is not heated and not subjected to heat treatment process) 2 (four) high disadvantages 'the present invention proposes indium oxide_material 6 And the oxidation mode 7 is used to reduce the resistivity of the transparent conductive film. The preferred embodiment of the conductive substrate for manufacturing a plastic substrate by RF co-minishing deposition mainly includes the following steps: 11 1295325 (A) at least one plastic The substrate is cleaned with a cleaning agent and ultrasonically oscillated for a minute, and then the plastic substrate is completely blown dry with nitrogen; (B) the plastic substrate is placed on the riding cavity, and the splashing chamber is rough-drawn by the rotating plunger pump. When the pressure in the chamber is less than 4 Pa, the turbo molecular pump is finely pumped until the pressure in the sputtering chamber is less than 2·6βχ1 (Γ4 Pa or less) [C) is passed into the gas generating argon gas π%. (10) Enter (D) Start the RF power of the power supply, and adjust the power matching box to maintain the lowest reflected power, and apply the pre-sputtering of the RF power of 50W, which is applied to the two-dollar plating. Minutes; ' (E) Set the power supply HL force rate, and adjust the power matching box to maintain the lowest reflected power 'to maintain the RF _ power required to apply the two magnetrons in the indium tin oxide target and the zinc oxide target , remove the baffle, two magnetic control type _ grab the indium tin oxide oxidized lion material while the money is shot on the plastic substrate; and the power supply, and the sputtering cavity and vacuum gas with nitrogen gas, take (F After the coating is finished, the power matching box is turned off and fine pumping is performed, and then the switch valve is closed to exit the plastic substrate. It is preferred that the deposition rate is shown in Figure 3. The preferred embodiment is to establish a separate indium oxide zinc film with a process force of 1 and a flow rate of 15 argon gas. The deposition rate is shown in Figure 3. Then, the indium tin oxide film is shown in the figure and Gutianjiang and α have a deposition rate of low bond resistivity (ie, the rate of 6 12 + 5 s when the sputtering power is 12 5 〇 25), and the oxidation is also changed at the same time. The RF sputtering power on the zinc target 6 reaches the purpose of common sputtering doping on the Uu coffin 6 (the total target 6 and the zinc oxide target 7 ge plated indium tin oxide', n corresponding to the RF splash The plating power and the number of splashes are shown in Figure 6. In addition, J mines the number of mines. 'Because the film deposition method of the RF sputtering system is the material deposition method, the indulgence is the same as the physical, the knife-to-knife and the plasma-impacted leather. Indium tin oxide target... The material phase is similar. Therefore, the ratio of tin smear material 6 to oxygen to μ 7 at different deposition rates can be used to push the shop and the knife half to estimate the zinc atom and indium atom ten. (4) Please refer to Figure 7. (Zn/(Zn# is in the form of indium tin oxide Μ6 and oxidized (4) only 7 rides =: after the electric film, respectively, by Hall measurement (five) one ^ system to measure the electrical conductivity of the enamel film , the carrier; the length and the carrier shift) and the visible light-ultraviolet spectrometer (hepatic-ns speCtr__meter) measure the visible light transmittance of the film, and the micromirror (at (10)icf〇rcem〗 Vr Γ卞刀", SCOPy, AFM) Observing the surface roughness of the film, seeking the dielectric film material with the lowest resistivity, the best visible light transmittance and the flatness. As shown in Figure 4, in order to utilize the above conditions, the common substrate is in the plastic substrate. The results of the relevant electrical characteristics of the deposited transparent conductive film on the 5th, from the results of the figure, found that in the antimony indium tin oxide material of the bismuth ore, at the same time, the total amount of oxidized ruthenium material as a doping material, when applied The power of zinc oxide dry material 7 is between 5 "~15" (corresponding to the estimation of zinc atom and indium (Zn/(Zn+In)at%) tt_26~47 13 1295325%) /3 ¥ 冤 film resistance indium tin film conductivity (+ 乂 乂 乂 的 1 1·96 X 1〇3 Q cm) indium 6 when the target speech oxidation milk Kojima § w ([zeta] _ Zeng estimated RF power mining machine, respectively the fine ^, · presume - the Zn / (Zn + In) at% ~
It’二疋由於在共機錢的過程中’適量氧化鋅材料的加入，使 、生新的化合物非晶質的化合物產生， 有效降低薄膜之電阻率。者亚 口此月匕 田 在氧化軸材7上的 又功率達到200 w，薄膜的電阻率則開始劣化，而者 過多氧化鋅靶材加入時， 田 軚夕的辞原子取代銦原子降低了薄膜 的載子濃度，使得電阻率 、 羊開始上升。在利用共濺鍍系統所沉積 者的透明導電膜之薄膜透光性的量測中（如圖五所示）發現， 、同/、歲鍵功率备雜氧化辞革巴材所得的透明導電膜，其可 見光波奴之平均穿透率都超過8。％ (顔〜⑽)。 如圖八及圖九所示，為該透明導電膜的表面粗糖度觀測結 果其利用本發明以氧化銦錫以及氧化鋅為革巴材，當兩革巴材共 乂鍍力率刀別為150 W與75 W時，薄膜的表面粗糙度約為h 22 ⑽，與單獨氧化銦_材6_功㈣15()請，所沉積之氧 化銦錫透明導電膜的表面粗糙度相比，明顯獲得改善，這是由 於非晶相ZnkIn2〇3+k化合物產生所造成。 因此’較佳實施例針對射頻共濺鍍系統利用氧化銦錫靶材 1295325 识处％等電膜的共濺鍍 6與氧化鋅靶材 矸以於宮、、西if i立ΠΓ 又汝作一規範’證明 了以方、至皿料下在可撓式_基板 率、离可m Φ &、# t 上，几積具有低薄膜電阻 革見先牙透率以及高表面均勾性的透明導電膜，預期 以徹底取代傳統使用氧化銦錫薄膜沉積在可 、預心 法藉由熱處理過程H得低電 、u基板5無 冰w 電阻率之透明導電膜特性的困境。此 外，較佳貫施例另規範出， 此 如 "^工制共濺鍍系統的沉 藉由對應氧化銦錫靶材6及氧化鋅靶 … 材7的射頻功率，與 化銦錫與氧化鋅薄膜不同的材料特 “己乳 折射率等），調變沉積出不(如功函數與 文㈠貝出不同共溅鍍薄膜 撓式塑膠基板5上抖心w 則樣應用在可 電缚膜用途（如具有低電阻率的抗 反射膜與階變層結構）。 【圖式簡單說明】 圖—係本發明較佳實施例之射頻共濺㈣統示意圖。 圖-係本發明較佳實施例之射頻共賤鑛裝置示意圖。 圖三為本發明不晴下沉積氧化銦_材與氧化物才其 寿膜之濺鍍速率關係圖。 積透明導電膜在不同濺鍍條 關係圖。 導電膜之薄膜透光性的穿透 圖四為本發明在塑膠基板上沉 件下電阻率、載子濃度以及移動率 圖五為本發明所沉積出的透明 率關係圖。 1295325 圖六為本發明靶材所對應的射頻濺鍍功率以及藏鑛參數。 圖七為氧化銦錫與氧化鋅靶材在不同射頻功率所對應的沉 積速率比，其鋅原子以及銦原子的原子比率。 $圖八為本發明單獨以射頻賤鑛功率$ 150 w施加在氧化姻 锡乾材上，所沉積的氧化銦錫透明導電膜的表面示意圖。 圖九為本發明以氧化銦錫以及氧化辞為 分別為150 W盥75 w日* ^ /、心，义功率 月莫的表面示意 圖 ”W 4，所沉積的透明導電 16 1295325 【主要元件符號說明】 1 濺鍍腔體 11 承載台 12 冷卻水 13播板 21，22 磁控式濺鍍槍 31，32 電源供應器 41，42 功率匹配箱 5 塑膠基板 6 氧化銦錫靶材 7 氧化鋅靶材 81 旋轉柱塞幫浦 82 渦輪分子幫浦 83 開關閥 9 氣體流量控制器 17It's due to the addition of a proper amount of zinc oxide material during the process of sharing the money, it produces a new compound amorphous compound, which effectively reduces the resistivity of the film. In this month, Yakou’s power on the oxidized shaft 7 reached 200 W, and the resistivity of the film began to deteriorate. When too many zinc oxide targets were added, Tian Yixi’s atomic atom replaced the indium atom and lowered the film. The carrier concentration makes the resistivity and the sheep begin to rise. In the measurement of the light transmittance of the transparent conductive film deposited by the common sputtering system (as shown in FIG. 5), it is found that the transparent conductive film obtained by the same/year-old key power is prepared by the oxidation of the retort. The average penetration rate of visible light waves is more than 8. % (Yan ~ (10)). As shown in FIG. 8 and FIG. 9 , in view of the surface roughness of the transparent conductive film, the indium tin oxide and the zinc oxide are used as the leather material of the present invention, and the galvanic plating rate of the two leather materials is 150. When W and 75 W, the surface roughness of the film is about h 22 (10), which is obviously improved compared with the surface roughness of the deposited indium tin oxide transparent conductive film, which is separate from indium oxide_6_work (4) 15 (). This is caused by the production of the amorphous phase ZinkIn2〇3+k compound. Therefore, the preferred embodiment utilizes an indium tin oxide target 1295325 for the RF common-sputtering system to recognize the co-sputtering of the % isoelectric film and the zinc oxide target, and to make it in the palace, the west, and the The specification 'proves that the ratio of the flexible _ substrate rate, the measurable m Φ &, # t, the low-resistance of the low-resistance electrical resistance and the high surface homogeneity The conductive film is expected to completely replace the conventional use of an indium tin oxide film deposited on the premise that the heat treatment process by the heat treatment process H is low, and the u substrate 5 has no ice w resistivity. In addition, the preferred embodiment is further specified, such as the "^ co-sputtering system sinking by the corresponding indium tin oxide target 6 and zinc oxide target material 7 RF power, with indium tin and oxidation Different materials of zinc film special "self-emulsion refractive index, etc.", modulation and deposition are not (such as work function and text (a) shell out different co-sputtering film flexible plastic substrate 5 on the shaking heart w then applied in the electrically bondable film Uses (such as anti-reflective film and step-change layer structure with low resistivity). BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of a radio frequency co-sputtering (four) system according to a preferred embodiment of the present invention. Schematic diagram of the RF antimony ore device. Fig. 3 is a graph showing the relationship between the sputtering rate of the indium oxide deposited on the indium oxide and the oxide in the case of the invention. The relationship between the transparent conductive film and the different sputtered strips. FIG. 4 is a graph showing the transmittance ratio, carrier concentration and mobility of the present invention on the plastic substrate. FIG. Corresponding RF sputtering power and Tibetan ginseng Figure 7 shows the deposition rate ratio of indium tin oxide and zinc oxide target at different RF powers, and the atomic ratio of zinc atoms and indium atoms. Figure 8 is a separate application of RF crucible power of $ 150 w in the present invention. Schematic diagram of the surface of the indium tin oxide transparent conductive film deposited on the dried oxidized tin-tin material. Figure 9 shows that the indium tin oxide and the oxidized word of the present invention are respectively 150 W 盥 75 w day * ^ /, heart, power month Mo's surface diagram" W 4, deposited transparent conductive 16 1295325 [Main component symbol description] 1 Sputter cavity 11 Carrier 12 Cooling water 13 Broadcasting board 21, 22 Magnetically controlled sputtering gun 31, 32 Power supply 41,42 Power matching box 5 Plastic substrate 6 Indium tin oxide target 7 Zinc oxide target 81 Rotary plunger pump 82 Turbo molecular pump 83 Switch valve 9 Gas flow controller 17