TWI479547B - 薄膜電晶體之製備方法及頂閘極式薄膜電晶體 - Google Patents

薄膜電晶體之製備方法及頂閘極式薄膜電晶體 Download PDF

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Publication number
TWI479547B
TWI479547B TW100115551A TW100115551A TWI479547B TW I479547 B TWI479547 B TW I479547B TW 100115551 A TW100115551 A TW 100115551A TW 100115551 A TW100115551 A TW 100115551A TW I479547 B TWI479547 B TW I479547B
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Taiwan
Prior art keywords
thin film
film transistor
carbon nanotube
walled carbon
oxide layer
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TW100115551A
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English (en)
Chinese (zh)
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TW201246309A (en
Inventor
高騏
蕭鉉樺
鄭百勝
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國立成功大學
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Priority to TW100115551A priority Critical patent/TWI479547B/zh
Priority to US13/463,856 priority patent/US20120280213A1/en
Priority to CN201210136709.5A priority patent/CN102856169B/zh
Priority to JP2012105931A priority patent/JP5553856B2/ja
Publication of TW201246309A publication Critical patent/TW201246309A/zh
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Publication of TWI479547B publication Critical patent/TWI479547B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electroluminescent Light Sources (AREA)
TW100115551A 2011-05-04 2011-05-04 薄膜電晶體之製備方法及頂閘極式薄膜電晶體 TWI479547B (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW100115551A TWI479547B (zh) 2011-05-04 2011-05-04 薄膜電晶體之製備方法及頂閘極式薄膜電晶體
US13/463,856 US20120280213A1 (en) 2011-05-04 2012-05-04 Method of Fabricating Thin Film Transistor and Top-gate Type Thin Film Transistor
CN201210136709.5A CN102856169B (zh) 2011-05-04 2012-05-04 薄膜晶体管的制备方法及顶栅极式薄膜晶体管
JP2012105931A JP5553856B2 (ja) 2011-05-04 2012-05-07 薄膜トランジスタ及びトップゲート型薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100115551A TWI479547B (zh) 2011-05-04 2011-05-04 薄膜電晶體之製備方法及頂閘極式薄膜電晶體

Publications (2)

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TW201246309A TW201246309A (en) 2012-11-16
TWI479547B true TWI479547B (zh) 2015-04-01

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US (1) US20120280213A1 (enExample)
JP (1) JP5553856B2 (enExample)
CN (1) CN102856169B (enExample)
TW (1) TWI479547B (enExample)

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CN105810749B (zh) * 2014-12-31 2018-12-21 清华大学 N型薄膜晶体管
CN105810746B (zh) 2014-12-31 2019-02-05 清华大学 N型薄膜晶体管
CN105810785B (zh) 2014-12-31 2018-05-22 清华大学 发光二极管
CN105810747B (zh) 2014-12-31 2018-11-30 清华大学 N型薄膜晶体管
KR102356986B1 (ko) * 2015-07-16 2022-02-03 삼성디스플레이 주식회사 표시 패널, 이를 포함하는 표시 장치 및 이의 구동 방법
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CN108336142B (zh) * 2017-01-20 2020-09-25 清华大学 薄膜晶体管
KR20200005583A (ko) * 2017-05-04 2020-01-15 카본 나노튜브 테크놀로지스, 엘엘씨 단극성 n형 또는 p형 탄소나노튜브 트랜지스터 및 그 제조 방법
US10847757B2 (en) 2017-05-04 2020-11-24 Carbon Nanotube Technologies, Llc Carbon enabled vertical organic light emitting transistors
US10978640B2 (en) 2017-05-08 2021-04-13 Atom H2O, Llc Manufacturing of carbon nanotube thin film transistor backplanes and display integration thereof
US10665796B2 (en) 2017-05-08 2020-05-26 Carbon Nanotube Technologies, Llc Manufacturing of carbon nanotube thin film transistor backplanes and display integration thereof
CN113632254B (zh) 2019-01-04 2026-07-21 阿汤姆H20有限责任公司 基于碳纳米管的射频设备
CN110137355B (zh) * 2019-05-15 2021-05-25 华东师范大学 一种改进亚阈值摆幅和开关比的有机薄膜晶体管及制备方法
KR20220111299A (ko) 2019-12-05 2022-08-09 아톰 에이치투오, 엘엘씨 단일벽 탄소 나노튜브 막과 그 제조 방법 및 제조 장치
CN117468093B (zh) * 2022-07-20 2026-08-07 北京大学 一种铋基单晶态自氧化介电层及其制备方法和应用
CN121398331B (zh) * 2025-12-23 2026-07-24 中国科学院金属研究所 基于热场调控的人工突触晶体管及其制作方法

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Publication number Publication date
JP5553856B2 (ja) 2014-07-16
CN102856169B (zh) 2015-04-15
CN102856169A (zh) 2013-01-02
US20120280213A1 (en) 2012-11-08
JP2012235129A (ja) 2012-11-29
TW201246309A (en) 2012-11-16

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