TWI478248B - - Google Patents
Info
- Publication number
- TWI478248B TWI478248B TW101134003A TW101134003A TWI478248B TW I478248 B TWI478248 B TW I478248B TW 101134003 A TW101134003 A TW 101134003A TW 101134003 A TW101134003 A TW 101134003A TW I478248 B TWI478248 B TW I478248B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Liquid Crystal (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101134003A TW201413825A (zh) | 2012-09-17 | 2012-09-17 | 薄膜電晶體的製作方法 |
CN201310370062.7A CN103681350B (zh) | 2012-09-17 | 2013-08-22 | 薄膜晶体管的制作方法 |
JP2013190450A JP5747423B2 (ja) | 2012-09-17 | 2013-09-13 | 薄膜トランジスタデバイスを作成する方法 |
US14/026,166 US8912058B2 (en) | 2012-09-17 | 2013-09-13 | Method of forming a thin film transistor using a gray-scale photoresist |
EP13184571.1A EP2709158B1 (en) | 2012-09-17 | 2013-09-16 | Method of making a thin film transistor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW101134003A TW201413825A (zh) | 2012-09-17 | 2012-09-17 | 薄膜電晶體的製作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201413825A TW201413825A (zh) | 2014-04-01 |
TWI478248B true TWI478248B (zh) | 2015-03-21 |
Family
ID=49165629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101134003A TW201413825A (zh) | 2012-09-17 | 2012-09-17 | 薄膜電晶體的製作方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8912058B2 (zh) |
EP (1) | EP2709158B1 (zh) |
JP (1) | JP5747423B2 (zh) |
CN (1) | CN103681350B (zh) |
TW (1) | TW201413825A (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105140124B (zh) * | 2015-07-29 | 2018-12-11 | 武汉华星光电技术有限公司 | 一种多晶硅薄膜晶体管的制作方法 |
CN106128961A (zh) * | 2016-08-30 | 2016-11-16 | 深圳市华星光电技术有限公司 | 一种ltps薄膜晶体管的制作方法 |
US10957713B2 (en) | 2018-04-19 | 2021-03-23 | Wuhan China Star Optoelectronics Technology Co., Ltd. | LTPS TFT substrate and manufacturing method thereof |
CN108565247B (zh) * | 2018-04-19 | 2020-09-29 | 武汉华星光电技术有限公司 | Ltps tft基板的制作方法及ltps tft基板 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200827463A (en) * | 2006-10-12 | 2008-07-01 | Ulvac Inc | Conductive film forming method, thin film transistor, panel with thin film transistor and thin film transistor manufacturing method |
TW201145497A (en) * | 2010-06-15 | 2011-12-16 | Macronix Int Co Ltd | A memory device and manufacturing method |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4231811A (en) * | 1979-09-13 | 1980-11-04 | Intel Corporation | Variable thickness self-aligned photoresist process |
JP2004063845A (ja) * | 2002-07-30 | 2004-02-26 | Toshiba Corp | 薄膜トランジスタの製造方法、平面表示装置の製造方法、薄膜トランジスタ及び平面表示装置 |
TW579604B (en) * | 2002-12-17 | 2004-03-11 | Ind Tech Res Inst | Method of forming a top-gate type thin film transistor device |
TW588463B (en) * | 2003-04-04 | 2004-05-21 | Au Optronics Corp | A method for forming a low temperature polysilicon complementary metal oxide semiconductor thin film transistor |
TWI289357B (en) | 2003-06-30 | 2007-11-01 | Au Optronics Corp | Method of forming low temperature polysilicon thin film transistor |
US6841475B1 (en) * | 2003-11-21 | 2005-01-11 | Au Optronics Corporation | Method for fabricating thin film transistors |
US7098091B2 (en) * | 2004-02-20 | 2006-08-29 | Au Optronics Corporation | Method for fabricating thin film transistors |
JP4321486B2 (ja) * | 2004-07-12 | 2009-08-26 | セイコーエプソン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7033902B2 (en) * | 2004-09-23 | 2006-04-25 | Toppoly Optoelectronics Corp. | Method for making thin film transistors with lightly doped regions |
TWI257177B (en) * | 2005-07-27 | 2006-06-21 | Quanta Display Inc | Manufacturing processes for a thin film transistor and a pixel structure |
KR101239889B1 (ko) * | 2005-08-13 | 2013-03-06 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101267499B1 (ko) * | 2005-08-18 | 2013-05-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판의 제조 방법 및 그에 의해 제조된박막 트랜지스터 |
KR100796609B1 (ko) * | 2006-08-17 | 2008-01-22 | 삼성에스디아이 주식회사 | Cmos 박막 트랜지스터의 제조방법 |
JP2008177457A (ja) * | 2007-01-22 | 2008-07-31 | Seiko Epson Corp | 半導体装置の製造方法、電気光学装置の製造方法、およびハーフトーンマスク |
JP5243414B2 (ja) * | 2007-05-21 | 2013-07-24 | シャープ株式会社 | 半導体装置及びその製造方法 |
JP2008305882A (ja) * | 2007-06-06 | 2008-12-18 | Seiko Epson Corp | レジストパターンの形成方法及び半導体装置の製造方法 |
JP2009021320A (ja) * | 2007-07-11 | 2009-01-29 | Seiko Epson Corp | 半導体装置の製造方法、半導体装置、及び電子機器 |
JP4930324B2 (ja) * | 2007-10-29 | 2012-05-16 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
JP2009130016A (ja) * | 2007-11-21 | 2009-06-11 | Seiko Epson Corp | 半導体装置の製造方法及び電子機器 |
JP5377940B2 (ja) * | 2007-12-03 | 2013-12-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR100964227B1 (ko) * | 2008-05-06 | 2010-06-17 | 삼성모바일디스플레이주식회사 | 평판 표시 장치용 박막 트랜지스터 어레이 기판, 이를포함하는 유기 발광 표시 장치, 및 이들의 제조 방법 |
JP5369501B2 (ja) * | 2008-06-04 | 2013-12-18 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4563499B2 (ja) * | 2009-11-25 | 2010-10-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TWI449004B (zh) * | 2010-08-30 | 2014-08-11 | Au Optronics Corp | 畫素結構及其製造方法 |
US9019440B2 (en) * | 2011-01-21 | 2015-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
2012
- 2012-09-17 TW TW101134003A patent/TW201413825A/zh not_active IP Right Cessation
-
2013
- 2013-08-22 CN CN201310370062.7A patent/CN103681350B/zh active Active
- 2013-09-13 US US14/026,166 patent/US8912058B2/en active Active
- 2013-09-13 JP JP2013190450A patent/JP5747423B2/ja active Active
- 2013-09-16 EP EP13184571.1A patent/EP2709158B1/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200827463A (en) * | 2006-10-12 | 2008-07-01 | Ulvac Inc | Conductive film forming method, thin film transistor, panel with thin film transistor and thin film transistor manufacturing method |
TW201145497A (en) * | 2010-06-15 | 2011-12-16 | Macronix Int Co Ltd | A memory device and manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
US20140080267A1 (en) | 2014-03-20 |
EP2709158B1 (en) | 2019-03-06 |
JP5747423B2 (ja) | 2015-07-15 |
EP2709158A2 (en) | 2014-03-19 |
CN103681350B (zh) | 2017-03-22 |
US8912058B2 (en) | 2014-12-16 |
CN103681350A (zh) | 2014-03-26 |
TW201413825A (zh) | 2014-04-01 |
EP2709158A3 (en) | 2014-08-20 |
JP2014060399A (ja) | 2014-04-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |