TWI477341B - Semiconductor packages and method for manufacturing the same - Google Patents

Semiconductor packages and method for manufacturing the same Download PDF

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TWI477341B
TWI477341B TW101119232A TW101119232A TWI477341B TW I477341 B TWI477341 B TW I477341B TW 101119232 A TW101119232 A TW 101119232A TW 101119232 A TW101119232 A TW 101119232A TW I477341 B TWI477341 B TW I477341B
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spiral
trajectory
track
laser beam
semiconductor package
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TW201244862A (en
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Yil Huh
Hong Chan Choi
Young Hwan Kim
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Hanmi Semiconductor Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • B23K26/382Removing material by boring or cutting by boring
    • B23K26/389Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Laser Beam Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

半導體封裝及製造半導體封裝之方法 Semiconductor package and method of manufacturing semiconductor package

本發明係關於一種處理半導體封裝之雷射束輻射軌跡生成方法,更特定言之,係關於製造一半導體封裝之雷射束輻射軌跡之生成方法,藉由該方法,在疊層封裝型(PoP)等之一半導體封裝之製造製程中能自動、精確而容易地生成一指向該半導體封裝之一模具部分之螺旋雷射束輻射軌跡。 BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a method for generating a laser beam trajectory for processing a semiconductor package, and more particularly to a method for generating a laser beam trajectory for fabricating a semiconductor package, by which a stacked package type (PoP) A manufacturing process of a semiconductor package can automatically, accurately and easily generate a spiral laser beam radiation trajectory directed to a mold portion of the semiconductor package.

目前,根據具有各種功能之小尺寸、多用途之發展趨勢,諸如移動可攜式電話、可攜式互聯網裝置及可攜式多媒體終端,諸如多晶片封裝MCP及疊層封裝PoP技術之各種半導體封裝技術正在發展中,此等技術能實現製造重量輕且尺寸小之裝置,同時亦能製造高容量且高集成度之裝置。 Currently, according to the trend of small size and multi-purpose with various functions, such as mobile portable phones, portable Internet devices and portable multimedia terminals, various semiconductor packages such as multi-chip package MCP and stacked package PoP technology Technology is evolving to enable the manufacture of lightweight and small-sized devices, as well as high-capacity and highly integrated devices.

彼等技術中,該疊層封裝PoP技術係如此一技術,即堆疊其中組合有一個以上半導體晶片之封裝,一般而言,係為電連接藉由結合一上半導體封裝下側上形成之焊球與一下半導體封裝上側上形成之複數個焊球而實現。 In these technologies, the stacked package PoP technology is a technology in which a package in which one or more semiconductor wafers are combined is stacked, and in general, is electrically connected by bonding solder balls formed on the lower side of an upper semiconductor package. This is achieved with a plurality of solder balls formed on the upper side of the semiconductor package.

藉由該疊層封裝PoP技術結合該等上、下半導體封裝之際,若該等兩半導體封裝因翹曲而存在差異時,則使得該上半導體封裝之該等焊球與該下半導體封裝之該等焊球之精確結合變得困難,且因此形成缺陷之可能性大。 When the stacked and packaged PoP technology is combined with the upper and lower semiconductor packages, if the two semiconductor packages are different due to warpage, the solder balls of the upper semiconductor package and the lower semiconductor package are The precise bonding of the solder balls becomes difficult, and thus the possibility of forming defects is large.

然而,若在一半導體封裝製造製程中製造該半導體封裝之種類或尺寸發生變化,則亦需改變該螺旋軌跡,用以滿足該半導體封裝之該種類或尺寸。然而,如前所述,在相關技藝中,由於該雷射束之該螺旋軌跡係首先由CAD生成,且該軌跡之該數字資訊被提供至該雷射束輻射裝置之一控制器,故任何時候只要被製造之該半導體封裝之種類發生變化,皆需要重複該 螺旋軌跡生成。 However, if the type or size of the semiconductor package is changed in a semiconductor package fabrication process, the spiral track needs to be changed to meet the type or size of the semiconductor package. However, as mentioned above, in the related art, since the spiral trajectory of the laser beam is first generated by CAD, and the digital information of the trajectory is supplied to one of the controllers of the laser beam radiation device, any Whenever the type of the semiconductor package to be manufactured changes, it is necessary to repeat the Spiral trajectory generation.

因此,由於該螺旋軌跡生成花費大量時間,故生產率低下。 Therefore, since the generation of the spiral trajectory takes a lot of time, the productivity is low.

為解決此等問題,本發明之一目標係提供一種利用該雷射束生成用於形成一通孔之雷射束輻射軌跡之方法,藉由該方法,在諸如該疊層封裝型(PoP)之該半導體封裝之製造製程中,為在該半導體封裝之一模具部分內形成一通孔,其能快速而容易地生成一雷射束輻射軌跡。 In order to solve such problems, an object of the present invention is to provide a method for generating a laser beam radiation trajectory for forming a through hole by using the laser beam, by means of the method, for example, in a stacked package type (PoP) In the manufacturing process of the semiconductor package, a through hole is formed in a mold portion of the semiconductor package, which can quickly and easily generate a laser beam radiation trajectory.

為實現此等目標與其他優點,且根據本發明之該目的,如此處之具體與概括性描述,利用一半導體封裝製造機--其沿著一螺旋軌跡輻射一雷射束至一半導體封裝之模具部分用以形成一通孔--生成一雷射束輻射軌跡之方法,該方法包括該等步驟:(a)自一雷射束輻射裝置之一控制器內儲存之複數個螺旋軌跡圖樣類型中選擇一圖樣類型;(b)藉由輸入與所選該螺旋軌跡圖樣有關之資訊而生成一螺旋軌跡;及(c)輸入與該螺旋軌跡有關之雷射束輻射條件。 To achieve these and other advantages, and in accordance with the present invention, as specifically and broadly described herein, a semiconductor package fabrication machine is utilized that radiates a laser beam along a spiral track to a semiconductor package. The mold portion is for forming a through hole--a method for generating a laser beam radiation trajectory, the method comprising the steps of: (a) from a plurality of spiral trajectory pattern types stored in a controller of a laser beam radiation device Selecting a pattern type; (b) generating a spiral trajectory by inputting information related to the selected spiral trajectory pattern; and (c) inputting a laser beam radiation condition associated with the spiral trajectory.

在本發明之另一方面中,用一半導體封裝製造機--其沿著一螺旋軌跡輻射一雷射束至一半導體封裝之模具部分用以形成一通孔--生成一雷射束輻射軌跡之方法,該方法包括該等步驟:(a)輸入與一分段式螺旋圖樣類型有關之資訊用以形成該螺旋軌跡,該分段式螺旋圖樣類型形成之該螺旋軌跡間距G從一段至另一段各不相同;及(b)輸入雷射束輻射條件。 In another aspect of the invention, a semiconductor package manufacturing machine is used which radiates a laser beam along a spiral path to a mold portion of a semiconductor package for forming a via hole to generate a laser beam radiation trajectory The method comprises the steps of: (a) inputting information relating to a segmented spiral pattern type to form the spiral track, the segmented spiral pattern type forming the spiral track pitch G from one segment to another segment Different; and (b) input laser beam radiation conditions.

本發明具有如下有利效果。 The present invention has the following advantageous effects.

由於操作者可選擇該雷射束螺旋軌跡圖樣且能輸入與該螺旋圖樣有關之資訊及該雷射束輻射條件,故使得該螺旋圖樣之生成與該通孔之形成能自動實現,即使製造時該半導體封裝之尺寸與種類可能變化,該操作者亦能快速而精確地生成該螺旋圖樣,藉此而提高生產率與處理效率。 Since the operator can select the laser beam spiral trajectory pattern and can input information related to the spiral pattern and the laser beam radiation condition, the generation of the spiral pattern and the formation of the through hole can be automatically realized even when manufacturing. The size and type of the semiconductor package may vary, and the operator can also quickly and accurately generate the spiral pattern, thereby improving productivity and processing efficiency.

[最佳模態] [best mode]

現將詳細參照本發明之該等特定具體實施例,該等特定具體實施例之實例說明於該等附圖中。任何可能之處,該等相同之原件符號在該等所有圖式中皆指該等相同或相似之部分。 The specific embodiments of the present invention will now be described in detail, and examples of such specific embodiments are illustrated in the drawings. Wherever possible, the same elementary symbols refer to the same or similar parts in all of the drawings.

僅供參考,儘管以下描述係關於根據本發明之一方法--該方法係在一疊層封裝PoP型半導體封裝製造製程中生成用於形成一通孔之一雷射束輻射軌跡,該通孔使得一焊球墊自一下半導體封裝之模具部分曝露--之具體實施例,但本發明並不侷限於此,而係可以相同或相似之方式應用於所有半導體封裝製造製程,即在每一該等半導體封裝製造製程中雷射束沿著一螺旋軌跡輻射而用以形成一預定形式。 For reference only, although the following description relates to a method according to the present invention for generating a laser beam radiation trajectory for forming a via hole in a stacked package PoP type semiconductor package manufacturing process, the through hole A specific embodiment of a solder ball pad exposed from a mold portion of a lower semiconductor package, but the invention is not limited thereto, and may be applied to all semiconductor package manufacturing processes in the same or similar manner, that is, at each such The laser beam is radiated along a spiral track in a semiconductor package fabrication process to form a predetermined pattern.

僅供參考,即使以下描述一種用於處理根據本發明之半導體封裝之雷射束輻射軌跡生成方法之具體實施例為關於一種用於在封裝疊層(Package on Package,PoP)類型半導體封裝製程中,形成一通孔以暴露一焊球墊至一下半導體封裝的模具部分之一雷射束螺旋輻射軌跡生成方法,但本發明並未侷限於此,而是可同樣或類似運用於所有半導體封裝製程,在該製程期間,一雷射束為沿著一螺旋軌跡輻射。 For reference only, a specific embodiment of a method for generating a laser beam radiation trajectory for processing a semiconductor package according to the present invention is described below with respect to a method for packaging in a package on a package (PoP) type semiconductor package. Forming a through hole to expose a solder ball pad to a laser beam spiral radiation track generating method of one of the mold portions of the semiconductor package, but the present invention is not limited thereto, but can be applied to all semiconductor packaging processes in the same or similar manner. During this process, a laser beam is radiated along a spiral track.

在下半導體封裝整個模製在一位置以減少翹曲之後,其中在下半導體封裝的製程期間以一模製步驟形成焊球墊,一雷射束輻射裝置(20)便可用來在半導體封裝(10)的模具部分(11)上,在每一焊球墊(12)的一部分中形成一通孔(13),以暴露焊球墊(12)至一模具部分(11)的外部,如附圖的圖1與2所示。其後,當上半導體封裝 疊層在下半導體封裝上時,上半導體封裝的焊球通過通孔(13)與下半導體封裝的焊球墊(12)互連。 After the lower semiconductor package is entirely molded at a position to reduce warpage, wherein a solder ball pad is formed in a molding step during the process of the lower semiconductor package, a laser beam radiating device (20) can be used in the semiconductor package (10) On the mold portion (11), a through hole (13) is formed in a portion of each solder ball pad (12) to expose the solder ball pad (12) to the outside of a mold portion (11), as shown in the drawing. 1 and 2 are shown. Thereafter, when the upper semiconductor package When laminated on the lower semiconductor package, the solder balls of the upper semiconductor package are interconnected with the solder ball pads (12) of the lower semiconductor package through the via holes (13).

當通孔在下半導體封裝的模具部分形成時,雷射束會輻射。此時,使用一方法,即雷射束於與每一焊球墊相匹配之一位置處沿著一螺旋軌跡輻射,均勻切割該模具部分,由於雷射束將該焊球墊之損害降低至最小程度。該雷射束之如此一螺旋軌跡首先藉由一電腦輔助設計(CAD)繪出,然後,每一軌跡的數字資訊輸入雷射束輻射裝置之一控制器,用於形成該通孔之時,始終以一固定軌跡輻射該雷射束。 When a via is formed in the mold portion of the lower semiconductor package, the laser beam is radiated. At this time, a method is used in which the laser beam is radiated along a spiral track at a position matching each of the solder ball pads, and the mold portion is uniformly cut, since the damage of the solder ball pad is reduced by the laser beam to Minimal. Such a spiral trajectory of the laser beam is first drawn by a computer aided design (CAD), and then the digital information of each trajectory is input to a controller of the laser beam radiating device for forming the through hole. The laser beam is always radiated with a fixed trajectory.

如果所要處理半導體封裝的類型或尺寸在一半導體封裝製程中改變,螺旋軌跡亦應改變符合該半導體封裝的類型或尺寸。不過,因為操作人員先以上述CAD繪圖生成螺旋軌跡,然後將螺旋軌跡上的數字資訊輸入雷射束輻射裝置的控制器,所以每當改變所要處理半導體封裝的類型時,需要重複此一螺旋軌跡生成處理。 If the type or size of the semiconductor package to be processed is changed in a semiconductor package process, the spiral track should also be changed to conform to the type or size of the semiconductor package. However, because the operator first generates a spiral trajectory from the above CAD drawing, and then inputs the digital information on the spiral trajectory into the controller of the laser beam irradiation device, this spiral trajectory needs to be repeated each time the type of the semiconductor package to be processed is changed. Generate processing.

圖3說明一流程圖,該流程圖顯示一方法之該等步驟,該方法係根據本發明之一較佳具體實施例生成用於製造一半導體封裝之雷射束輻射軌跡,該方法包括步驟:於一雷射束輻射裝置之一控制器內儲存之複數個螺旋軌跡圖樣中選擇一圖樣;藉由輸入與所選該螺旋軌跡圖樣有關之資訊而生成一螺旋軌跡;及輸入與生成之該螺旋軌跡有關之雷射束輻射條件。 3 illustrates a flow chart showing the steps of a method for generating a laser beam radiation trace for fabricating a semiconductor package in accordance with a preferred embodiment of the present invention, the method comprising the steps of: Selecting a pattern from a plurality of spiral track patterns stored in a controller of a laser beam radiation device; generating a spiral track by inputting information related to the selected spiral track pattern; and inputting and generating the spiral The ray-related laser beam radiation conditions.

隨後將詳細描述各步驟。 Each step will be described in detail later.

在該輻射該雷射束之該雷射束輻射裝置之該控制器中,儲存有具有複數個用於生成一雷射束螺旋軌跡之螺旋圖樣程式。 In the controller of the laser beam radiating device that radiates the laser beam, a spiral pattern program having a plurality of helical traces for generating a laser beam is stored.

該控制器中儲存之該螺旋軌跡圖樣包括:等間距型圖樣, 在每一該等圖樣中,如圖4所示,自一內部端始,至一外部端止,該螺旋軌跡之固定間距G維持不變;漸增/減型螺旋軌跡圖樣,在每一該等圖樣中,如圖5或6所示,自一內部端始,至一外部端止,該螺旋軌跡之間距G逐漸增加或減小;及分段式螺旋軌跡圖樣,在每一該等圖樣中,如圖7所示,自一段至另一段,該螺旋軌跡之間距G各不相同。 The spiral track pattern stored in the controller includes: an equally spaced pattern, In each of the patterns, as shown in FIG. 4, the fixed pitch G of the spiral track remains unchanged from an inner end to an outer end; an incremental/subtractive spiral track pattern is used in each of the patterns. In the pattern, as shown in FIG. 5 or 6, from an inner end to an outer end, the distance between the spiral tracks is gradually increased or decreased; and the segmented spiral track pattern is in each of the patterns. In the figure, as shown in FIG. 7, the distance G between the spiral tracks is different from one segment to another.

在自複數個螺旋軌跡圖樣中選擇一圖樣之該步驟中,該操作者選擇該等圖樣之一用於生成相應之螺旋軌跡,即,選擇該等間距模態生成該等間距螺旋軌跡,選擇該漸進式螺旋模態用於生成該漸增/減之螺旋圖樣,及選擇該分段式螺旋模態用於生成該分段式螺旋圖樣。 In the step of selecting a pattern from the plurality of spiral trajectory patterns, the operator selects one of the patterns to generate a corresponding spiral trajectory, that is, selecting the equally spaced modality to generate the equally spaced spiral trajectory, and selecting the A progressive spiral mode is used to generate the incremental/subtractive spiral pattern, and the segmented spiral mode is selected for generating the segmented spiral pattern.

然後,該操作者輸入與希望根據所選該螺旋軌跡模態而生成之該螺旋軌跡有關之資訊。 The operator then inputs information relating to the spiral trajectory that is desired to be generated based on the selected trajectory of the spiral trajectory.

例如,若該操作者自該螺旋軌跡圖樣生成模態中選擇該等間距螺旋模態,則該用戶輸入此等資訊,即,該螺旋軌跡之一方向(順時針或逆時針)、該螺旋軌跡之最內部軌跡之直徑Is、該螺旋軌跡之最外部軌跡之直徑Os、及該螺旋軌跡之間距G。除此之外,該操作者還輸入是否生成一輪廓連接軌跡OL,該輪廓連接軌跡OL係用於連接該螺旋軌跡之該最外部軌跡與一圓。圖4C與4D中之該等螺旋軌跡說明其中該等輪廓連接軌跡已生成之狀態。該輪廓連接軌跡係用作形成將為一完整圓之該螺旋軌跡之該輪廓,用於在該半導體封裝之該模具部分內形成一將為一完整圓之通孔。 For example, if the operator selects the equally spaced spiral mode from the spiral track pattern generation mode, the user inputs the information, that is, one direction of the spiral track (clockwise or counterclockwise), the spiral track The diameter Is of the innermost trajectory, the diameter Os of the outermost trajectory of the spiral trajectory, and the distance G between the spiral trajectories. In addition to this, the operator also inputs whether or not to generate a contour connection trajectory OL for connecting the outermost trajectory of the spiral trajectory with a circle. The spiral trajectories in Figures 4C and 4D illustrate the state in which the contour connection trajectories have been generated. The profile connection track is used to form the profile of the spiral track that will be a complete circle for forming a through hole that will be a complete circle in the mold portion of the semiconductor package.

若該操作者自該等螺旋軌跡圖樣生成模態中選擇該漸進式螺旋模態,則該操作者輸入此等資訊,即,該螺旋軌跡之一方向(順時針或逆時針)、該螺旋軌跡之最內部軌跡之直徑Is,該螺旋軌跡之最外部軌跡之直徑Os、及該螺旋軌跡之間距G。除此之外,該操作者還輸入該螺旋軌跡之該間距變化量、該螺旋軌跡之最大間距Gmax與該螺旋軌跡之最小間距Gmin。當然, 同樣在此情形下,與前述之該等間距螺旋模態相似,另外較佳該操作者輸入是否生成用以確定一輪廓連接軌跡OL生成與否之該輪廓連接軌跡OL,該輪廓連接軌跡OL係用於連接該螺旋軌跡之該最外部軌跡與一圓。 If the operator selects the progressive spiral mode from the spiral track pattern generation modes, the operator inputs the information, that is, one direction of the spiral track (clockwise or counterclockwise), the spiral track The diameter Is of the innermost trajectory, the diameter Os of the outermost trajectory of the spiral trajectory, and the distance G between the spiral trajectories. In addition, the operator also inputs the amount of change of the pitch of the spiral track, the spiral track of the maximum distance G max and the minimum pitch of the spiral track G min. Of course, also in this case, similar to the aforementioned equal-pitch spiral mode, it is preferable that the operator input generates the contour connection trajectory OL for determining whether a contour connecting trajectory OL is generated or not. The OL is used to connect the outermost trajectory of the spiral trajectory with a circle.

依據該螺旋軌跡之該間距之該變化量,以該漸進式螺旋模態生成之該螺旋軌跡或變成如此一形狀,即其中當該軌跡逐漸向外側移動時該間距逐漸增加,如圖5中所示,或變成如此一形狀,即其中當該軌跡逐漸向外側移動時該間距逐漸減小,如圖6中所示。 According to the variation of the pitch of the spiral track, the spiral track generated by the progressive spiral mode or becomes such a shape that the pitch gradually increases as the track gradually moves outward, as shown in FIG. Show, or become such a shape that the pitch gradually decreases as the trajectory gradually moves outward, as shown in FIG.

若該操作者自該等螺旋軌跡圖樣生成模態中選擇該分段式螺旋模態,則該操作者輸入此等資訊,即,該螺旋軌跡之一方向(順時針或逆時針)、該螺旋軌跡之最內部軌跡之直徑Is、該螺旋軌跡之最外部軌跡之直徑Os、及每一段中該螺旋軌跡之間距G、及段數。該等段之資訊可藉由考慮該半導體封裝之該焊球墊(見圖2)之直徑等而設置。 If the operator selects the segmented spiral mode from the spiral track pattern generation modalities, the operator inputs the information, that is, one direction of the spiral track (clockwise or counterclockwise), the spiral The diameter Is of the innermost track of the track, the diameter Os of the outermost track of the spiral track, and the distance G between the spiral tracks in each segment, and the number of segments. The information of the segments can be set by considering the diameter or the like of the solder ball pad (see FIG. 2) of the semiconductor package.

例如,該螺旋軌跡具有如此一形狀,即其中與該半導體封裝之該焊球墊12相對之一中心部分處之該間距稠密,該中心部分之一外部分處之該間距稀疏,而該螺旋軌跡之一最外部分處之該間距又變得稠密,如圖7A、7B、7E與7F所示,或一最中心部分處之該間距稀疏,該最中心部分之一外部分處之該間距稠密,而該螺旋軌跡之一外部分處之該間距又變得稀疏,如圖7C、7D、7G與7H所示。 For example, the spiral track has a shape in which the pitch is dense at a central portion opposite to the solder ball pad 12 of the semiconductor package, and the pitch at the outer portion of the center portion is sparse, and the spiral track is The spacing at one of the outermost portions becomes dense again, as shown in Figures 7A, 7B, 7E and 7F, or the spacing at a most central portion is sparse, the spacing at the outer portion of one of the most central portions being dense And the spacing at the outer portion of the spiral track becomes sparse again, as shown in Figures 7C, 7D, 7G and 7H.

一旦所選之該螺旋軌跡圖樣之軌跡資訊輸入已完成,該雷射束輻射裝置之該控制器輸出用一監控器生成之該螺旋軌跡,用於為該操作者驗證其所要之軌跡是否已生成。 Once the selected trajectory information input of the spiral trajectory pattern is completed, the controller of the laser beam radiant device outputs the spiral trajectory generated by a monitor for verifying that the desired trajectory has been generated for the operator. .

然後,該操作者設置雷射束輻射條件,諸如該雷射束輻射裝置之雷射束輻射速度、雷射束密度、該雷射束輻射次數、該雷射束之輻射方向(自該螺旋軌跡之內側至外側,或反之亦然)等。例如,為切割該模具部分11(見圖1與2)或與此相對之部 分,該雷射束輻射速度可設置為低速或於需要能量多處增強該雷射束之強度;為切割該模具部分11,該雷射束輻射速度可設置為快速或於需要能量少處降低該雷射束之強度。當然,一些該等雷射束輻射條件可在輸入該螺旋軌跡資訊之步驟中輸入。 The operator then sets the laser beam radiation conditions, such as the laser beam radiation velocity of the laser beam radiation device, the laser beam density, the number of times the laser beam is radiated, and the radiation direction of the laser beam (from the spiral track) From the inside to the outside, or vice versa). For example, to cut the mold portion 11 (see Figures 1 and 2) or to the opposite side The laser beam radiation speed may be set to a low speed or to enhance the intensity of the laser beam at a plurality of places where energy is required; to cut the mold portion 11, the laser beam radiation speed may be set to be fast or to reduce the energy required. The intensity of the laser beam. Of course, some of these laser beam radiation conditions can be entered in the step of inputting the spiral track information.

設置所有該等雷射束輻射條件後,則生成該螺旋軌跡之該操作完成,該雷射束輻射裝置之該控制器以設置之次數沿著已生成之該雷射束輻射軌跡重複輻射該雷射束,藉以在該半導體封裝之該模具部分11(見圖1與2)中形成該通孔13。在此情形下,儘管該雷射束輻射裝置能從已生成之該螺旋軌跡之內側至外側沿著該螺旋軌跡輻射該雷射束,但較佳該雷射束輻射裝置從已生成之該螺旋軌跡之該外側至該內側沿著該螺旋軌跡輻射該雷射束,藉以而形成該通孔13,用以具有一向上擴大之內側圓周。 After all of the laser beam radiation conditions are set, the operation of generating the spiral trajectory is completed, and the controller of the laser beam radiant device repeatedly radiates the ray along the generated trajectory of the laser beam radiation. The beam is formed by forming the through hole 13 in the mold portion 11 (see FIGS. 1 and 2) of the semiconductor package. In this case, although the laser beam radiating means is capable of radiating the laser beam from the inside to the outside of the generated spiral track along the spiral track, it is preferred that the laser beam radiating means generates the spiral from The outer side of the track to the inner side radiates the laser beam along the spiral track, thereby forming the through hole 13 for having an upwardly enlarged inner circumference.

與此同時,儘管該前述具體實施例建議藉由沿著已生成之該相同螺旋軌跡重複輻射該雷射束形成該通孔,但是亦可根據該重複次數生成不同之螺旋軌跡。 At the same time, although the foregoing specific embodiment suggests that the via hole is formed by repeatedly radiating the laser beam along the same spiral track that has been generated, different spiral tracks may be generated according to the number of repetitions.

例如,第一次雷射束輻射時,僅在該中央部分形成該等間距或該漸進間距螺旋軌跡,第二次雷射束輻射時,自該第一次螺旋軌跡之該端點開始形成該螺旋軌跡之預定形狀,且第三次雷射束輻射時,僅集中在該螺旋軌跡之該最外部分形成該螺旋軌跡,用於根據該重複次數逐段形成該通孔段。 For example, when the first laser beam is irradiated, the equal pitch or the progressive pitch spiral track is formed only in the central portion, and when the second laser beam is radiated, the end point is formed from the end of the first spiral track. The predetermined shape of the spiral track, and when the third laser beam is radiated, the spiral track is formed only at the outermost portion of the spiral track for forming the through hole segment piece by piece according to the number of repetitions.

此外,儘管該前述具體實施例建議於輸入該等雷射束輻射條件之前輸入該螺旋軌跡圖樣之資訊,但是與此不同,可首先輸入該等雷射束輻射條件,而後輸入該螺旋軌跡圖樣之該資訊。 Moreover, although the foregoing specific embodiment suggests inputting information of the spiral trajectory pattern prior to inputting the conditions of the laser beam radiation, differently, the laser beam radiation conditions may be input first, and then the spiral trajectory pattern may be input. The information.

在生成該前述具體實施例之一雷射束輻射軌跡之該方法中,儘管該等複數個螺旋軌跡圖樣儲存於該控制器中,且選定該等螺旋軌跡圖樣之一生成該雷射束輻射軌跡。然而,如圖8 中本發明之另一具體實施例中所說明,藉由儲存該等螺旋軌跡圖樣其中之一,例如,缺省為該控制器中儲存該分段式螺旋圖樣,則使得直接輸入該螺旋軌跡資訊與該等雷射束輻射條件,而無需實施選擇該螺旋圖樣之種類之該步驟成為可能。 In the method of generating the laser beam radiation trajectory of one of the foregoing embodiments, the plurality of spiral trajectory patterns are stored in the controller, and one of the spiral trajectory patterns is selected to generate the laser beam radiation trajectory. . However, as shown in Figure 8. According to another embodiment of the present invention, by storing one of the spiral track patterns, for example, by default, the segmented spiral pattern is stored in the controller, so that the spiral track information is directly input. This step is possible with these laser beam radiation conditions without the need to implement the type of selection of the spiral pattern.

當然,同樣在該具體實施例中,該操作者輸入此等資訊,即該螺旋軌跡之一方向(順時針或逆時針)、該螺旋軌跡之最內部軌跡之直徑Is、該螺旋軌跡之最外部軌跡之直徑Os、及該螺旋軌跡之間距G、連同與段有關之資訊,該等段包括該半導體封裝之該焊球墊(見圖2)之直徑。 Of course, also in this embodiment, the operator inputs such information, that is, one direction of the spiral track (clockwise or counterclockwise), the diameter Is of the innermost track of the spiral track, and the outermost part of the spiral track The diameter Os of the track, and the distance G between the spiral tracks, along with information relating to the segments, includes the diameter of the solder ball pad (see FIG. 2) of the semiconductor package.

一旦完成該螺旋軌跡圖樣之該軌跡資訊之輸入,該操作者在一監控器上輸出已生成之該螺旋軌跡,確定一期望之軌跡是否已生成,且設置該等雷射束輻射條件,諸如該雷射束輻射裝置之雷射束輻射速度、雷射束強度、該雷射束之輻射次數、該雷射束之輻射方向(自該螺旋軌跡之內側至外側輻射,或反之亦然)等。 Once the input of the trajectory information of the spiral trajectory pattern is completed, the operator outputs the generated spiral trajectory on a monitor, determines whether a desired trajectory has been generated, and sets the laser beam radiation conditions, such as the The laser beam radiation velocity of the laser beam radiation device, the intensity of the laser beam, the number of radiations of the laser beam, the radiation direction of the laser beam (from the inside to the outside of the spiral track, or vice versa).

圖9說明藉由生成圖8中之一雷射束輻射軌跡之方法而生成之分段式螺旋軌跡圖樣之實例,其中圖9A說明該分段式螺旋軌跡圖樣,該分段式螺旋軌跡圖樣具有:一第一段,該段與該焊球之一外側匹配,其以非常稠密之間距形成;一第二段,該段在該第一段之一內側上,其以比該第一段之間距大之等間距形成;及一第三段,該段在該第二段之一內側上,其以比該第二段之間距大之等間距形成。圖9B說明具有一第四段之該分段式螺旋軌跡圖樣,該第四段以等間距形成,其在該第一段之一外側,其間距大於圖9A中該分段式螺旋圖樣之該第一段之間距。除圖9中說明之該等圖樣外,顯然可形成各種該等分段式圖樣。 9 illustrates an example of a segmented spiral trajectory pattern generated by the method of generating one of the laser beam radiation trajectories of FIG. 8, wherein FIG. 9A illustrates the segmented spiral trajectory pattern, the segmented spiral trajectory pattern having a first segment, the segment being matched to the outside of one of the solder balls, which is formed at a very dense pitch; and a second segment on the inner side of the first segment, which is compared to the first segment The equidistant spacing is formed at equal intervals; and a third segment is formed on the inner side of one of the second segments, which is formed at a greater spacing than the distance between the second segments. Figure 9B illustrates the segmented spiral trajectory pattern having a fourth segment formed at equal intervals, outside of one of the first segments, the spacing being greater than the segmented spiral pattern of Figure 9A. The distance between the first paragraph. In addition to the patterns illustrated in Figure 9, it is apparent that a variety of such segmented patterns can be formed.

對於熟悉此項技藝之人士而言,顯而易見在不偏離本發明之該精神與範圍之前提下,可對本發明進行各種更改與變化。因此,若該等更改與變化在該等所附申請專利範圍及其等價物 之範圍內時,本發明涵蓋本發明之該等更改與變化。 It will be apparent to those skilled in the art that various modifications and changes can be made in the present invention without departing from the spirit and scope of the invention. Therefore, if such changes and changes are in the scope of the appended claims and their equivalents The present invention covers such modifications and variations of the present invention.

[工業應用] [Industrial Application]

本發明可用於在一半導體封裝製造製程中自動生成指向該半導體封裝之該模具部分之雷射束輻射軌跡。 The present invention can be used to automatically generate a laser beam radiation trajectory directed to the mold portion of the semiconductor package in a semiconductor package fabrication process.

10‧‧‧半導體封裝 10‧‧‧Semiconductor package

11‧‧‧模具部分 11‧‧‧Mold part

12‧‧‧焊球墊 12‧‧‧ solder ball mat

13‧‧‧通孔 13‧‧‧through hole

20‧‧‧雷射束輻射裝置 20‧‧‧Laser beam radiation device

G‧‧‧間距 G‧‧‧ spacing

Is‧‧‧最內部軌跡之直徑 The diameter of the innermost track of Is‧‧‧

Os‧‧‧最外部軌跡之直徑 Os‧‧‧ diameter of the outermost track

OL‧‧‧輪廓連接軌跡 OL‧‧‧ contour connection track

Gmax‧‧‧最大間距 G max ‧‧‧Maximum spacing

Gmin‧‧‧最小間距 G min ‧‧‧minimum spacing

包括該等附圖係用於為該揭示內容提供進一步之理解,其被併入且構成此申請案之一部分,說明此揭示內容之具體實施例,且連同該描述用於解釋該揭示內容之原理。 These drawings are included to provide a further understanding of the disclosure, which is incorporated in and constitute a part of this application, and the specific embodiments of the disclosure, .

在該等圖式中:圖1與圖2說明關鍵部分之若干段,每一顯示形成一通孔之製程,該通孔係在一通常之疊層封裝PoP型半導體封裝製造製程中藉由使一雷射束指向一半導體封裝之一模具部分而形成。 In the drawings: Figures 1 and 2 illustrate portions of the critical portion, each showing a process for forming a via, which is made in a conventional stacked package PoP type semiconductor package fabrication process The laser beam is directed to a mold portion of a semiconductor package.

圖3說明一流程圖,其顯示根據本發明之一較佳具體實施例為製造一半導體封裝生成一雷射束輻射軌跡之一方法之該等步驟。 3 illustrates a flow diagram showing the steps of a method of fabricating a laser beam radiation trace for fabricating a semiconductor package in accordance with a preferred embodiment of the present invention.

圖4說明圖3中用於生成一雷射束輻射軌跡之該方法中以等間距螺旋模態生成之等間距螺旋軌跡圖樣,其中圖4A與4B說明各自無輪廓連接軌跡之一逆時針方向與一順時針方向等間距螺旋軌跡圖樣,而圖4C與4D說明各自有輪廓連接軌跡之一逆時針方向與一順時針方向等間距螺旋軌跡圖樣。 4 illustrates an equally spaced spiral trajectory pattern generated by an equally spaced spiral mode in the method for generating a laser beam radiation trajectory in FIG. 3, wherein FIGS. 4A and 4B illustrate one of the non-contour connecting trajectories in a counterclockwise direction. A clockwise unequal spiral trajectory pattern, and Figures 4C and 4D illustrate one of the contoured trajectories, one counterclockwise direction and one clockwise equal pitch spiral trajectory pattern.

圖5說明漸增型螺旋軌跡圖樣之實例,其係藉由圖3中用於生成一雷射束輻射軌跡之一方法中之一漸進式螺旋模態而生成。 Figure 5 illustrates an example of an incremental spiral trajectory pattern generated by one of the progressive spiral modes of one of the methods for generating a laser beam radiation trajectory in Figure 3.

圖6說明漸減型螺旋軌跡圖樣之實例,其係藉由圖3中用於生成一雷射束輻射軌跡之一方法中之一漸進式螺旋模態而生成。 Figure 6 illustrates an example of a decreasing spiral trajectory pattern generated by one of the progressive spiral modes in the method of generating a laser beam trajectory in Figure 3.

圖7說明分段式螺旋軌跡圖樣之實例,其係藉由圖3中用於生成一雷射束輻射軌跡之一方法中之一分段式螺旋模態而 生成。 Figure 7 illustrates an example of a segmented spiral trajectory pattern by one of the segmented spiral modes in the method of generating a laser beam radiation trajectory in Figure 3. generate.

圖8說明一流程圖,其顯示根據本發明之另一較佳具體實施例製造一半導體封裝而生成一雷射束輻射軌跡之一方法之該等步驟。 Figure 8 illustrates a flow chart showing the steps of a method of fabricating a semiconductor package to generate a laser beam radiation trajectory in accordance with another preferred embodiment of the present invention.

圖9(A)和(B)說明分段式螺旋軌跡圖樣之其他實例,其係藉由圖8中用於生成一雷射束輻射軌跡之一方法生成。 Figures 9(A) and (B) illustrate other examples of segmented spiral trajectory patterns generated by one of the methods used to generate a laser beam radiation trajectory in Figure 8.

Claims (21)

一種製造一半導體封裝之方法,該方法包括下列步驟:設置一半導體封裝至一處理位置,該半導體封裝為整個模製在具垂直圓截面的焊球墊之一部分;及形成一通孔,藉由沿著一螺旋軌跡,輻射一雷射束至對應該焊球墊的該半導體封裝之一模具部分,以通過該通孔暴露該每一焊球墊外表之一部分至外部,該螺旋軌跡為從螺旋的起點至終點持續連接形成的一完整圓。 A method of fabricating a semiconductor package, the method comprising the steps of: disposing a semiconductor package to a processing location, the semiconductor package being integrally molded over a portion of a solder ball pad having a vertical circular cross section; and forming a via hole by a spiral track radiating a laser beam to a mold portion of the semiconductor package corresponding to the solder ball pad to expose a portion of the outer surface of each solder ball pad to the outside through the through hole, the spiral track being a spiral A complete circle formed by the continuous connection from the start point to the end point. 如申請專利範圍第1項所述之方法,其中該螺旋軌跡包括一均等間隔螺旋圖樣,其中該螺旋軌跡的間隔為從該螺旋軌跡之一內端持續維持至該螺旋軌跡之一外端。 The method of claim 1, wherein the spiral track comprises an equally spaced spiral pattern, wherein the spiral track is spaced from an inner end of the spiral track to an outer end of the spiral track. 如申請專利範圍第1項所述之方法,其中該螺旋軌跡包括一增加或減少的螺旋圖樣,其中該螺旋軌跡的間隔為從該螺旋軌跡之一內端逐漸遞增或遞減至該螺旋軌跡之一外端。 The method of claim 1, wherein the spiral trajectory comprises an increasing or decreasing spiral pattern, wherein the spacing of the spiral trajectory is gradually increasing or decreasing from one end of the spiral trajectory to one of the spiral trajectories Outer end. 如申請專利範圍第1項所述之方法,其中螺旋軌跡包括一分段式螺旋圖樣,其中該螺旋軌跡的間隔為隨著該螺旋軌跡之一部分而改變。 The method of claim 1, wherein the spiral trajectory comprises a segmented spiral pattern, wherein the spacing of the spiral trajectories varies with a portion of the spiral trajectory. 如申請專利範圍第2至4中任一項所述之方法,其中該形成一通孔之步驟包括沿著該螺旋軌跡,即從該螺旋軌跡之一外部至該螺旋軌跡之一內部,輻射一雷射束以暴露該焊球墊之步驟。 The method of any one of claims 2 to 4, wherein the step of forming a through hole comprises radiating a ray along the spiral trajectory, that is, from one of the spiral trajectories to one of the spiral trajectories The beam is exposed to expose the solder ball pad. 如申請專利範圍第2至4中任一項所述之方法,其中在形成一通孔的步驟中,該螺旋軌跡之一最外軌跡連接為一圓。 The method of any one of claims 2 to 4, wherein in the step of forming a through hole, one of the outermost tracks of the spiral track is connected as a circle. 一種用於製造一半導體封裝之方法,該方法包括下列步驟:設置一模壓下半導體封裝至一處理位置;在該下半導體封裝中形成一通孔,以藉由沿著一螺旋軌跡輻射一雷射束通過該通孔暴露該每一焊球墊外表之一上部分至外部,該螺旋軌跡形成從螺旋的起點至終點持續連接的一完整圓;及疊層一上半導體封裝在該下半導體封裝上,使得通過該下半導體封裝的通孔所暴露的每一焊球墊為互接至該上半導體封裝的一焊球。 A method for fabricating a semiconductor package, the method comprising the steps of: disposing a molded semiconductor package to a processing location; forming a via in the lower semiconductor package to radiate a laser beam along a spiral track Exposing an upper portion of the outer surface of each solder ball pad to the outside through the through hole, the spiral track forming a complete circle continuously connected from the start point to the end point of the spiral; and laminating an upper semiconductor package on the lower semiconductor package Each solder ball pad exposed through the through hole of the lower semiconductor package is such that a solder ball is connected to the upper semiconductor package. 如申請專利範圍第7項所述之方法,其中該螺旋軌跡形成,使得當雷射束連續輻射時,雷射束可沿著該螺旋軌跡移動。 The method of claim 7, wherein the spiral trajectory is formed such that when the laser beam is continuously radiated, the laser beam can move along the spiral trajectory. 如申請專利範圍第7項所述之方法,其中該螺旋 軌跡包括一均等間隔螺旋圖樣,其中該螺旋軌跡的間隔從該螺旋軌跡之一內端持續維持至該該螺旋軌跡之一外端。 The method of claim 7, wherein the spiral The trajectory includes an equally spaced helical pattern, wherein the spacing of the helical trajectory is maintained from an inner end of the helical trajectory to an outer end of the helical trajectory. 如申請專利範圍第7項所述之方法,其中該螺旋軌跡包括一增加或減少的螺旋圖樣,其中該螺旋軌跡的間隔為從該螺旋軌跡之一內端逐漸遞增或遞減至該螺旋軌跡之一外端。 The method of claim 7, wherein the spiral trajectory comprises an increasing or decreasing spiral pattern, wherein the spacing of the spiral trajectory is gradually increasing or decreasing from one end of the spiral trajectory to one of the spiral trajectories Outer end. 如申請專利範圍第7項所述之方法,其中該螺旋軌跡包括一分段式螺旋圖樣,其中該螺旋軌跡的間隔隨著該螺旋軌跡之一部分而改變。 The method of claim 7, wherein the spiral track comprises a segmented spiral pattern, wherein an interval of the spiral track changes with a portion of the spiral track. 如申請專利範圍第9項所述之方法,其中在該形成一通孔之步驟中,該螺旋軌跡之一最外軌跡連接為一圓。 The method of claim 9, wherein in the step of forming a through hole, one of the outermost tracks of the spiral track is connected as a circle. 如申請專利範圍第10項所述之方法,其中在該形成一通孔之步驟中,該螺旋軌跡之一最外軌跡連接為一圓。 The method of claim 10, wherein in the step of forming a through hole, one of the outermost tracks of the spiral track is connected as a circle. 如申請專利範圍第11項所述之方法,在形成一通孔之步驟中,該螺旋軌跡之一最外軌跡連接為一圓。 In the method of claim 11, in the step of forming a through hole, one of the outermost tracks of the spiral track is connected as a circle. 如申請專利範圍第9項所述之方法,其中該形 成一通孔之步驟包括沿著該螺旋軌跡,即從該螺旋軌跡之一外部至該螺旋軌跡之一內部,輻射一雷射束以暴露該焊球墊之步驟。 The method of claim 9, wherein the form The step of forming a through hole includes the step of exposing a laser beam to expose the solder ball pad along the spiral track, i.e., from one of the spiral tracks to the inside of the spiral track. 如申請專利範圍第10項所述之方法,其中該形成一通孔之步驟包括沿著該螺旋軌跡,即從該螺旋軌跡之一外部至該螺旋軌跡之一內部,輻射一雷射束以暴露該等焊球墊之步驟。 The method of claim 10, wherein the step of forming a through hole comprises irradiating a laser beam along the spiral track, that is, from one of the spiral tracks to one of the spiral tracks, to expose the The steps of the solder ball pad. 如申請專利範圍第11項所述之方法,其中該形成一通孔之步驟包括沿著該螺旋軌跡,即從該螺旋軌跡之一外部至該螺旋軌跡之一內部,輻射一雷射束以暴露該焊球墊之步驟。 The method of claim 11, wherein the step of forming a through hole comprises irradiating a laser beam along the spiral track, that is, from one of the spiral tracks to one of the spiral tracks, to expose the The step of soldering the ball pad. 一種用於製造一半導體封裝之方法,該方法包括:一第一步驟,從一雷射束輻射裝置的一控制器選擇一螺旋軌跡圖樣,該雷射束輻射裝置具有根據螺旋軌跡圖樣的類型儲存的複數個螺旋軌跡圖樣;一第二步驟,藉由輸入該選定螺旋軌跡圖樣的資訊產生一螺旋軌跡;一第三步驟,輸入一雷射束輻射條件;及一第四步驟,沿著一螺旋軌跡輻射一雷射束至一半導體封裝的一模具部分,該螺旋軌跡形成從螺旋的起點至終點持續連接之一完整圓,藉此形成一通孔,以通過 該通孔暴露該每一焊球墊外表的上部分。 A method for fabricating a semiconductor package, the method comprising: a first step of selecting a spiral trajectory pattern from a controller of a laser beam radiant device, the laser beam radiant device having a type stored according to a spiral trajectory pattern a plurality of spiral track patterns; a second step of generating a spiral track by inputting information of the selected spiral track pattern; a third step of inputting a laser beam radiation condition; and a fourth step of following a spiral The track radiates a laser beam to a mold portion of a semiconductor package, the spiral track forming a complete circle continuously connected from the start point to the end point of the spiral, thereby forming a through hole for passing The through hole exposes an upper portion of the outer surface of each solder ball pad. 如申請專利範圍第18項所述之方法,其中該等複數個螺旋軌跡圖樣為下列任一者:一均等間隔螺旋圖樣,其中該螺旋軌跡的間隔為從該螺旋軌跡之一內端持續維持至該螺旋軌跡之一外部;一逐漸遞增或遞減的螺旋圖樣,其中該螺旋軌跡的間隔為從該內端至該外端逐漸遞增或遞減;及一分段式螺旋圖樣,其中該螺旋軌跡的間隔(G)為隨著該螺旋軌跡之一部分而改變。 The method of claim 18, wherein the plurality of spiral trajectories are any of the following: an equally spaced spiral pattern, wherein the spacing of the spiral trajectories is maintained from one end of the spiral trajectory to One of the spiral tracks is external; a spiral pattern that gradually increases or decreases, wherein the interval of the spiral track is gradually increasing or decreasing from the inner end to the outer end; and a segmented spiral pattern in which the spiral track is spaced (G) changes as a part of the spiral trajectory. 如申請專利範圍第18或19項所述之方法,其中該等第一至第四步驟重複執行至少一次,其中該等彼此不同的螺旋軌跡圖樣為根據重複次數予以產生。 The method of claim 18, wherein the first to fourth steps are repeatedly performed at least once, wherein the mutually different spiral trajectory patterns are generated according to the number of repetitions. 如申請專利範圍第2至4中任一項所述之方法,其中該形成一通孔之步驟包括沿著該螺旋軌跡,即從該螺旋軌跡之一內部至該螺旋軌跡之一外部,輻射一雷射束以暴露該等焊球墊之步驟。 The method of any one of claims 2 to 4, wherein the step of forming a through hole comprises radiating a ray along the spiral trajectory, that is, from inside one of the spiral trajectories to outside one of the spiral trajectories The beam is exposed to expose the solder ball pads.
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