CN102292797A - Method for generating laser beam irradiation trajectory - Google Patents
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- CN102292797A CN102292797A CN2010800051234A CN201080005123A CN102292797A CN 102292797 A CN102292797 A CN 102292797A CN 2010800051234 A CN2010800051234 A CN 2010800051234A CN 201080005123 A CN201080005123 A CN 201080005123A CN 102292797 A CN102292797 A CN 102292797A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
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- H—ELECTRICITY
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H—ELECTRICITY
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Abstract
The present invention relates to a method for generating a laser beam irradiation trajectory for processing a semiconductor package, capable of automatically, accurately and easily generating a laser beam irradiation trajectory in a mold portion of the semiconductor package during manufacture of the semiconductor package. According to the present invention, the method for generating a laser beam irradiation trajectory for a semiconductor package-processing apparatus, which irradiates a laser beam onto the mold portion of the semiconductor package along a spiral trajectory to form via holes, comprises the steps of: enabling a controller of a laser beam irradiation apparatus, in which a plurality of spiral trajectory patterns are stored by types, to select one of the spiral trajectory pattern types; inputting information on the selected spiral trajectory pattern to generate a spiral trajectory; and inputting a laser beam irradiation condition.
Description
Technical field
The present invention relates to a kind of bombardment with laser beams orbit generation method of handling semiconductor packages, more specifically say, relate to the generation method of the bombardment with laser beams track of making the semiconductor encapsulation, by this method, at stacked package type (PoP; Package on Package) etc. can automatically, accurately and easily generate a spiral bombardment with laser beams track that points to a mould part of this semiconductor packages in the manufacturing processing procedure of semiconductor encapsulation.
Background technology
At present, according to the small size with various functions, multiduty development trend, such as mobile portable telephone, Portable internet apparatus and portable multimedia terminal, such as multicore sheet encapsulation (MCP; Multi Chip Package) and stacked package (PoP; Package on Package) the various semiconductor packagings of technology develop, and these technology can realize making device in light weight and that size is little, also can make the device of high power capacity and high integration simultaneously.
In they's technology, this stacked package (PoP) technology is a technology like this, promptly pile up and wherein make up the encapsulation that an above semiconductor chip is arranged, generally speaking, for being electrically connected by realizing in conjunction with forming a plurality of soldered balls on the soldered ball that forms on the semiconductor-on-insulator encapsulation downside and the semiconductor packages upside once.
By this stacked package technology in conjunction with these upper and lower semiconductor packages when, if the encapsulation of these two semiconductors is because of warpage (warpage) when there are differences, then make these soldered balls of this semiconductor-on-insulator encapsulation become difficult, and so to form the possibility of defective big with accurate combination of these soldered balls of this time semiconductor packages.
At present, make itself and a part-this solder ball pad formation in a molded step of making this time semiconductor packages fully-concordant by molded this time semiconductor packages in this part place, thereby after making that warpage difference between these upper and lower semiconductor packages is reduced to minimum degree, so shown in the attached Fig. 1 and 2 in place, by utilizing a bombardment with laser beams device 20, mould part 11 places in this semiconductor packages 10, in the part of each these solder ball pad 12, form a through hole (via hole) 13, thereby this solder ball pad 12 is exposed to the outside of this mould part 11.Afterwards, contact with these solder ball pads 12 on this time semiconductor packages 10 via these through holes 13, thereby this semiconductor-on-insulator encapsulates and is stacked on this time semiconductor packages by making these soldered balls in the encapsulation of this semiconductor-on-insulator.
Meanwhile, by a method, promptly along this laser beam of helical trajectory radiation, evenly cut this mould part by this laser beam of radiation in a position that is complementary with each these solder ball pad, thereby in this mould part of this time semiconductor packages, form this through hole, will be reduced to minimum degree to the infringement of this solder ball pad by this laser beam simultaneously.A helical trajectory like this of this laser beam is at first drawn by CAD, and the digital information of this track is provided to a controller of this bombardment with laser beams device, is used in this through hole of formation all the time with fixing this laser beam of track radiation.
Yet, change if make kind or the size of making this semiconductor packages in the processing procedure in the semiconductor encapsulation, also need change this helical trajectory, in order to satisfy this kind or the size of this semiconductor packages.Yet, as previously mentioned, in related art techniques, because this helical trajectory of this laser beam is at first to be generated by CAD, and this digital information of this track is provided to a controller of this bombardment with laser beams device, so, all need to repeat this helical trajectory and generate whenever as long as the kind of this manufactured semiconductor packages changes.
Therefore, because this helical trajectory generates the cost plenty of time, so productivity ratio is low.
Summary of the invention
Technical problem
For solving these problems, a target of the present invention provides a kind of method of utilizing this laser beam to generate the bombardment with laser beams track that is used to form a through hole, by this method, in manufacturing processing procedure such as this semiconductor packages of this stacked package type (PoP), for form a through hole in a mould part of this semiconductor packages, it can generate a bombardment with laser beams track quickly and easily.
Technical solution
For realizing these targets and other advantages, and according to this purpose of the present invention, describe as concrete and generality herein, maker-its mould part that encapsulates along a helical trajectory radiation one laser beam to semiconductor is in order to form the method for a through hole-generation one bombardment with laser beams track to utilize the semiconductor encapsulation, and this method comprises these steps: select a pattern type in a plurality of helical trajectory pattern types that store in a controller of a bombardment with laser beams device; Generate a helical trajectory by the input information relevant with selected this helical trajectory pattern; And the input bombardment with laser beams condition relevant with this helical trajectory.
In another aspect of this invention, encapsulate maker-its mould part that encapsulates along a helical trajectory radiation one laser beam to semiconductor in order to form the method for a through hole-generation one bombardment with laser beams track with semiconductor, this method comprises these steps: import the information relevant with a segmented spiral pattern type in order to forming this helical trajectory, this helical trajectory spacing G that this segmented spiral pattern type forms has nothing in common with each other from one section to another section; And input laser beam radiation condition.
Advantageous effects
The present invention has following advantageous effects.Because operator selectable is selected this laser beam helical trajectory pattern and can be imported the information relevant with this spiral pattern and this bombardment with laser beams condition, so make the generation of this spiral pattern and the formation of this through hole to realize automatically, even the size and the kind of this semiconductor packages may change when making, this operator also can generate this spiral pattern fast and accurately, therefore boosts productivity and treatment effeciency.
Description of drawings
Fig. 1 and Fig. 2 illustrate the plurality of sections of key component, and each shows the processing procedure that forms a through hole, and this through hole is to make in the processing procedure in a common stacked package N-type semiconductor N encapsulation to form by a mould part that makes a laser beam point to the semiconductor encapsulation.
Fig. 3 illustrates a flow chart, and it shows according to of the present invention one preferred specific embodiment for making these steps that the semiconductor encapsulation generates a method of a bombardment with laser beams track.
Be used for generating the equidistant helical trajectory pattern of this method of a bombardment with laser beams track in Fig. 4 key diagram 3 with equidistant spiral mode generation, wherein Fig. 4 A does not have a counter clockwise direction and the equidistant helical trajectory pattern of a clockwise direction that profile is connected track separately with the 4B explanation, and Fig. 4 C each has a counter clockwise direction and the equidistant helical trajectory pattern of a clockwise direction that profile is connected track with the 4D explanation.
Fig. 5 illustrates the example of cumulative type helical trajectory pattern, and it is that a gradual spiral mode by a method that is used for generating a bombardment with laser beams track among Fig. 3 generates.
Fig. 6 illustrates the decrescence example of type helical trajectory pattern, and it is that a gradual spiral mode by a method that is used for generating a bombardment with laser beams track among Fig. 3 generates.
Fig. 7 illustrates the example of segmented helical trajectory pattern, and it is that a segmented spiral mode by a method that is used for generating a bombardment with laser beams track among Fig. 3 generates.
Fig. 8 illustrates a flow chart, and it shows that another preferred specific embodiment manufacturing semiconductor encapsulation according to the present invention generates these steps of a method of a bombardment with laser beams track.
Fig. 9 illustrates other examples of segmented helical trajectory pattern, and it is by being used to generate the method generation of a bombardment with laser beams track among Fig. 8.
* main element symbol description *
10: semiconductor packages 11: mould part
12: solder ball pad 13: through hole
20: bombardment with laser beams device G: spacing
Is: the diameter Os of penetralia track: the diameter of most external track
OL: profile connects track G
Max: maximum spacing
G
Min: minimum spacing
Embodiment
Now will be in detail with reference to these certain specific embodiments of the present invention, the example of these certain specific embodiments is illustrated in these accompanying drawings.Any may part, all refer to these same or analogous parts in graphic to these components identical symbols at these.
Only for reference, be at a stacked package (PoP although following description relates to according to a method of the present invention-this method; Package on Package) the N-type semiconductor N encapsulation is made and is generated a bombardment with laser beams track that is used to form a through hole in the processing procedure, this through hole make a solder ball pad from the mould part of semiconductor packages once expose to the open air-specific embodiment, but the present invention is not limited thereto, but can same or analogous mode be applied to all semiconductor packages manufacturing processing procedures, promptly laser beam is scheduled to form along a helical trajectory radiation in order to form one in each these semiconductor packages manufacturing processing procedure.
Fig. 3 illustrates a flow chart, this flow chart shows these steps of a method, this method is to generate the bombardment with laser beams track that is used to make the semiconductor encapsulation according to of the present invention one preferred specific embodiment, and the method comprising the steps of: select a pattern in a plurality of helical trajectory patterns that store in a controller of a bombardment with laser beams device; Generate a helical trajectory by the input information relevant with selected this helical trajectory pattern; And input and the relevant bombardment with laser beams condition of this helical trajectory that generates.
To describe each step in detail subsequently.
In this controller of this bombardment with laser beams device of this this laser beam of radiation, store and have a plurality of spiral pattern programs that are used to generate a laser beam helical trajectory.
This helical trajectory pattern that stores in this controller comprises: equidistant type pattern, in each these pattern, as shown in Figure 4,, end to an outer end from the inside end beginning, and the constant spacing G of this helical trajectory remains unchanged; Cumulative/as to subtract type helical trajectory pattern, in each these pattern, shown in Fig. 5 or 6,, end to an outer end from the inside end beginning, the spacing G of this helical trajectory increases gradually or reduces; And segmented helical trajectory pattern, in each these pattern, as shown in Figure 7, from one section to another the section, the spacing G of this helical trajectory has nothing in common with each other.
In a plurality of helical trajectory patterns, selecting in this step of a pattern, this operator selects one of these patterns to be used to generate corresponding helical trajectory, promptly, select these spacing mode to generate these spacing helical trajectories, select this gradual spiral mode to be used to generate that this is cumulative/spiral pattern that subtracts, and select this segmented spiral mode to be used to generate this segmented spiral pattern.
Then, this operator's input and the relevant information of this helical trajectory of wishing to generate according to selected this helical trajectory mode.
For example, if this operator generates from this helical trajectory pattern and selects these spacing spiral modes in the mode, then this user imports these information, that is, the diameter Os of the most external track of the diameter Is of the penetralia track of a direction of this helical trajectory (clockwise or counterclockwise), this helical trajectory, this helical trajectory, and the spacing G of this helical trajectory.In addition, this operator also imports whether generate profile connection locus O L, and it is this a most external track and a circle that is used to connect this helical trajectory that this profile connects locus O L.These helical trajectories explanations among Fig. 4 C and the 4D wherein these profiles are connected the state that track has generated.It is will to be used for forming one and will to be the through hole of a complete circle in this mould part of this semiconductor packages for this profile of this helical trajectory of a complete circle as forming that this profile connects track.
If this operator generates from these helical trajectory patterns and selects this gradual spiral mode in the mode, then this operator imports these information, promptly, the diameter Is of the penetralia track of one direction of this helical trajectory (clockwise or counterclockwise), this helical trajectory, the diameter Os of the most external track of this helical trajectory, and the spacing G of this helical trajectory.In addition, this operator also imports this spacing variable quantity (variation) of this helical trajectory, the maximum spacing G of this helical trajectory
MaxMinimum spacing G with this helical trajectory
MinCertainly, equally in this case, similar to aforesaid these spacing spiral modes, whether preferred in addition this operator's input generates in order to determine that a profile connects this profile connection locus O L whether locus O L generates, and it is this a most external track and a circle that is used to connect this helical trajectory that this profile connects locus O L.
This variable quantity according to this spacing of this helical trajectory; this helical trajectory that generates with this gradual spiral mode or become a shape like this; promptly wherein when this track is mobile laterally gradually this spacing increase gradually; as shown in Figure 5; or become a shape like this; promptly wherein when this track is mobile laterally gradually this spacing reduce gradually, as shown in Figure 6.
If this operator generates from these helical trajectory patterns and selects this segmented spiral mode in the mode, then this operator imports these information, that is, the diameter Os of the most external track of the diameter Is of the penetralia track of a direction of this helical trajectory (clockwise or counterclockwise), this helical trajectory, this helical trajectory, and each section in spacing G, and the hop count of this helical trajectory.The information of these sections can be by considering this semiconductor packages the diameter etc. of this solder ball pad (see figure 2) be provided with.
For example, this helical trajectory has a shape like this, promptly this spacing of wherein relative with this solder ball pad 12 of this a semiconductor packages central part office is dense, this spacing of one outside office of this core is sparse, and this spacing of a most external office of this helical trajectory becomes dense, shown in Fig. 7 A, 7B, 7E and 7F, or this spacing at part place, a bosom is sparse, this spacing of one outside office of this bosom part is dense, and this spacing of an outside office of this helical trajectory becomes sparse, shown in Fig. 7 C, 7D, 7E and 7F.
In case the input of the trace information of selected this helical trajectory pattern is finished, this controller output of this bombardment with laser beams device is used to this operator to verify whether its desired track generates with this helical trajectory that a watch-dog generates.
Then, this operator is provided with the bombardment with laser beams condition, such as radiation direction of the bombardment with laser beams speed of this bombardment with laser beams device, laser beam density, this bombardment with laser beams number of times, this laser beam (inboard of this helical trajectory is to the outside certainly, or vice versa) etc.For example, for cutting this mould part 11 (seeing Fig. 1 and 2) or relative therewith part, this bombardment with laser beams speed can be set to low speed or strengthen this intensity of laser beam in needs energy many places; For cutting this mould part 11, this bombardment with laser beams speed can be set to reduce this intensity of laser beam fast or in needs little energy place.Certainly, some these bombardment with laser beams conditions can be imported in the step of this helical trajectory information of input.
After all these bombardment with laser beams conditions are set, this operation that then generates this helical trajectory is finished, this controller of this bombardment with laser beams device repeats this laser beam of radiation with the number of times that is provided with along this bombardment with laser beams track that has generated, therefore forms this through hole 13 in this mould part 11 (seeing Fig. 1 and 2) of this semiconductor packages.In this case, although this bombardment with laser beams device can be from inboard to the outside of this helical trajectory of having generated along this this laser beam of helical trajectory radiation, but preferably this bombardment with laser beams device from this outside to this inboard of this helical trajectory of having generated along this this laser beam of helical trajectory radiation, therefore form this through hole 13, in order to have an inside circumference that upwards enlarges.
Meanwhile, although this aforementioned specific embodiment suggestion forms this through hole by repeating this laser beam of radiation along this same-handed track that has generated, also can generate different helical trajectories according to this number of repetition.
For example, for the first time during bombardment with laser beams, only form these spacings or this progressive spacing helical trajectory at this middle body, for the second time during bombardment with laser beams, this end points of helical trajectory begins to form the reservation shape of this helical trajectory first time from this, and during bombardment with laser beams, this outermost portion that only concentrates on this helical trajectory forms this helical trajectory, is used for forming this through hole section piecemeal according to this number of repetition for the third time.
In addition, different therewith although this aforementioned specific embodiment advises importing the information of this helical trajectory pattern before these bombardment with laser beams conditions of input, can at first import these bombardment with laser beams conditions, then import this information of this helical trajectory pattern.
In this method of a bombardment with laser beams track that generates this aforementioned specific embodiment, although these a plurality of helical trajectory patterns are stored in this controller, and this bombardment with laser beams track of generation of selected these helical trajectory patterns.Yet, as illustrated in another specific embodiment of the present invention among Fig. 8, by store these helical trajectory patterns one of them, for example, default to and store this segmented spiral pattern in this controller, then make this helical trajectory information and these bombardment with laser beams conditions directly imported, and need not to implement to select this step of the kind of this spiral pattern to become possibility.
Certainly, equally in this specific embodiment, this operator imports these information, promptly the diameter Os of the most external track of the diameter Is of the penetralia track of a direction of this helical trajectory (clockwise or counterclockwise), this helical trajectory, this helical trajectory, and the spacing G of this helical trajectory, together with the information relevant with section, these sections comprise the diameter of this solder ball pad (see figure 2) of this semiconductor packages.
In case finish the input of this trace information of this helical trajectory pattern, this operator exports this helical trajectory that has generated on a watch-dog, whether the track of determining an expectation generates, and these bombardment with laser beams conditions are set, such as radiation number of times of the bombardment with laser beams speed of this bombardment with laser beams device, laser beam intensity, this laser beam, the radiation direction of this laser beam (inboard of this helical trajectory to outside radiation certainly, or vice versa) etc.
Fig. 9 illustrates the example of the segmented helical trajectory pattern that generates by the method that generates the bombardment with laser beams track among Fig. 8, wherein Fig. 9 A illustrates this segmented helical trajectory pattern, this segmented helical trajectory pattern has: one first section (#1 section, #1 section), this section mates with an outside of this soldered ball, and it forms with very dense spacing; One second section (#2 section, #2 section), this section are on this inboard of first section, and it is with the equidistant formation bigger than this spacing of first section; And one the 3rd section (#3 section, #3 section), this section is on this inboard of second section, and it is with the equidistant formation bigger than this spacing of second section.Fig. 9 B explanation has this segmented helical trajectory pattern of the 4th section (#4 section, #4 section), and the 4th section with equidistant formation, and it is in this outside of first section, and its spacing is greater than this spacing of first section of this segmented spiral pattern among Fig. 9 A.Except that these patterns illustrated in fig. 9, obviously can form various these segmented patterns.
For the ordinary skill in the art, obviously do not depart from of the present invention should spirit and the prerequisite of scope under, can carry out various changes and variation to the present invention.Therefore, when changing with variation in the scope of these claims and equivalent thereof as if these, these changes of the present invention and variation are contained in the present invention.
Commercial Application
The present invention is used in the semiconductor encapsulation and makes the bombardment with laser beams track that generates this mould part that points to this semiconductor packages in the processing procedure automatically.
Claims (12)
1. a bombardment with laser beams orbit generation method of handling semiconductor packages makes the mould part of semiconductor encapsulation maker along a helical trajectory radiation one laser beam to described semiconductor packages in order to form a through hole, said method comprising the steps of:
(a) select a pattern type in a plurality of helical trajectory pattern types that in a controller of a bombardment with laser beams device, store;
(b) generate a helical trajectory by the input information relevant with selected helical trajectory pattern; And
(c) the input bombardment with laser beams condition relevant with described helical trajectory.
2. the bombardment with laser beams orbit generation method of processing semiconductor packages according to claim 1, wherein, the described helical trajectory pattern type that is stored in the described controller comprises:
Equidistantly pattern type in each these pattern, from the inside end beginning, ends to an outer end, and the constant spacing of described helical trajectory (G) remains unchanged;
Cumulative/as to subtract type helical trajectory pattern type, in each these pattern,, to end to an outer end from the inside end beginning, the spacing of described helical trajectory (G) increases gradually or reduces;
And
Segmented helical trajectory pattern type, in each these pattern, from one section to another the section, the spacing of described helical trajectory (G) has nothing in common with each other.
3. the bombardment with laser beams orbit generation method of processing semiconductor packages according to claim 1, wherein, the information relevant with described helical trajectory pattern of input comprises one of following at least information in the described step (b): the information of the information of the diameter (Os) of the information of the diameter (Is) of a penetralia track of the information of the direction of relevant described helical trajectory, relevant described helical trajectory, the most external track of relevant described helical trajectory, the spacing (G) of relevant described helical trajectory.
4. the bombardment with laser beams orbit generation method of processing semiconductor packages according to claim 3, wherein, the information of the relevant described helical trajectory pattern of input further comprises one of following at least information in the described step (b): the maximum spacing (G of the information of the spacing variable quantity of relevant described helical trajectory, relevant described helical trajectory
Max) information, the minimum spacing (G of relevant described helical trajectory
Min) information, and the information of the diameter of the solder ball pad of relevant described semiconductor packages of spacing (G) of information, the relevant described helical trajectory of each section.
5. the bombardment with laser beams orbit generation method of processing semiconductor packages according to claim 3, wherein, the information of the relevant described helical trajectory of input further comprises whether generating the information that a profile connects track (OL) in the described step (b), and described profile connects a described most external track and the circle that track (OL) is used to connect described helical trajectory.
6. the bombardment with laser beams orbit generation method of processing semiconductor packages according to claim 1, wherein, the bombardment with laser beams condition of input comprises one of following at least information in the described step (c): the information of the information of a relevant bombardment with laser beams speed, a relevant laser beam intensity, and the information of relevant bombardment with laser beams number of times.
7. the bombardment with laser beams orbit generation method of processing semiconductor packages according to claim 1, wherein, in described step (c) when the described bombardment with laser beams condition of input, the radiation direction of described laser beam is set to the outside from described helical trajectory to its inboard.
8. bombardment with laser beams orbit generation method of handling semiconductor packages, the mould part that the semiconductor packages maker is encapsulated along a helical trajectory radiation one laser beam to semiconductor in order to form a through hole, said method comprising the steps of:
(a) the input information relevant with a segmented spiral pattern type is in order to forming described helical trajectory, and the spacing (G) of the described helical trajectory that described segmented spiral pattern type forms has nothing in common with each other to another section from one section; And
(b) input laser beam radiation condition.
9. the bombardment with laser beams orbit generation method of processing semiconductor packages according to claim 8, wherein, in the described step (a) information of the relevant described helical trajectory of input comprise following at least information one of them: about the information of described helical trajectory direction, the information of the diameter (Is) of one penetralia track of relevant described helical trajectory, the information of the diameter (Os) of the most external track of relevant described helical trajectory, the information of the spacing (G) of the described spiral track of relevant each section, the information of the spacing variable quantity of the described helical trajectory of relevant each section, maximum spacing (the G of the described helical trajectory of relevant each section
Max) information, the minimum spacing (G of the relevant described helical trajectory of each section
Min) information, and the information of the diameter of the solder ball pad of relevant described semiconductor packages.
10. the bombardment with laser beams orbit generation method of processing semiconductor packages according to claim 9, wherein, the information of the relevant described helical trajectory of input comprises that further whether connect track (OL) with a profile generates relevant information in the step (a), and described profile connects a described most external track and the circle that track (OL) connects described helical trajectory.
11. the bombardment with laser beams orbit generation method of processing semiconductor packages according to claim 8, wherein, the described bombardment with laser beams condition of input comprises one of following at least information in the step (b): the information of the information of relevant bombardment with laser beams speed, relevant laser beam intensity, and the information of relevant bombardment with laser beams number of times.
12. the bombardment with laser beams orbit generation method of processing semiconductor packages according to claim 8, wherein, in described step (b) in the described bombardment with laser beams condition of input, the radiation direction of described laser beam is set to the outside from described helical trajectory to its inboard.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210177966.3A CN102728957B (en) | 2009-02-23 | 2010-02-05 | The method of semiconductor packages and manufacture semiconductor packages |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0014698 | 2009-02-23 | ||
| KR1020090014698A KR101179983B1 (en) | 2009-02-23 | 2009-02-23 | Method for Generating Laser Beam Radiation Trajectories for Processing Semiconductor Packages |
| PCT/KR2010/000707 WO2010095826A2 (en) | 2009-02-23 | 2010-02-05 | Method for generating laser beam irradiation trajectory |
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|---|---|---|---|
| CN201210177966.3A Division CN102728957B (en) | 2009-02-23 | 2010-02-05 | The method of semiconductor packages and manufacture semiconductor packages |
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| CN102292797A true CN102292797A (en) | 2011-12-21 |
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| CN201210177966.3A Active CN102728957B (en) | 2009-02-23 | 2010-02-05 | The method of semiconductor packages and manufacture semiconductor packages |
| CN2010800051234A Pending CN102292797A (en) | 2009-02-23 | 2010-02-05 | Method for generating laser beam irradiation trajectory |
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| KR (1) | KR101179983B1 (en) |
| CN (2) | CN102728957B (en) |
| TW (2) | TWI429496B (en) |
| WO (1) | WO2010095826A2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105108338A (en) * | 2015-09-30 | 2015-12-02 | 深圳市联赢激光股份有限公司 | Method for controlling laser welding |
| CN108406141A (en) * | 2018-04-18 | 2018-08-17 | 中国科学院西安光学精密机械研究所 | Ultrafast laser micropore processing method and device based on optical coherence tomography |
| CN110153555A (en) * | 2019-06-18 | 2019-08-23 | 西安中科微精光子制造科技有限公司 | Laser machine control method, device and the electronic equipment of rotary-cut scanning track |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012111771B4 (en) | 2012-12-04 | 2020-12-03 | Ewag Ag | Method for machining a workpiece using a laser machining device for manufacturing a cutting tool |
| CN110385521B (en) * | 2019-08-29 | 2021-03-16 | 西安交通大学 | A femtosecond laser processing device and method for fast and deep etching of silicon carbide |
| KR102410304B1 (en) * | 2020-05-27 | 2022-06-17 | 최지훈 | The chip-rework apparatus |
| KR20220046364A (en) | 2020-10-07 | 2022-04-14 | 한미반도체 주식회사 | Laser processing method of semiconductor package |
| KR20220094303A (en) | 2020-12-28 | 2022-07-06 | 삼성디스플레이 주식회사 | Display device and method of manufacturing of the display device |
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- 2010-02-05 CN CN201210177966.3A patent/CN102728957B/en active Active
- 2010-02-05 CN CN2010800051234A patent/CN102292797A/en active Pending
- 2010-02-10 TW TW099104048A patent/TWI429496B/en active
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2010095826A3 (en) | 2010-11-18 |
| KR101179983B1 (en) | 2012-09-07 |
| TWI477341B (en) | 2015-03-21 |
| TW201244862A (en) | 2012-11-16 |
| TW201032933A (en) | 2010-09-16 |
| KR20100095735A (en) | 2010-09-01 |
| WO2010095826A2 (en) | 2010-08-26 |
| TWI429496B (en) | 2014-03-11 |
| CN102728957A (en) | 2012-10-17 |
| CN102728957B (en) | 2015-09-16 |
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