TWI470675B - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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TWI470675B
TWI470675B TW95142918A TW95142918A TWI470675B TW I470675 B TWI470675 B TW I470675B TW 95142918 A TW95142918 A TW 95142918A TW 95142918 A TW95142918 A TW 95142918A TW I470675 B TWI470675 B TW I470675B
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Taiwan
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light
substrate
semiconductor device
semiconductor
irradiation
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TW95142918A
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TW200739694A (en
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Yoshiyuki Kawana
Naoki Sano
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Success Internat Corp
Hightec Systems Corp
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description

半導體裝置之製造方法
本發明係關於一種半導體裝置的製造方法。更詳細而言，係關於含有進行半導體形成金屬接觸所用之熱處理的製程的半導體裝置之製造方法。
以前，在以雙極性電晶體、絕緣閘形場效電晶體(MOS型半導體)等等為首的各種半導體元件、半導體積體電路等等的半導體裝置之製造中，為了形成半導體/金屬之間的接觸，通常是在半導體表面上堆積金屬層以後，將其保持在既定的溫度，並保持惰性氣體等等的空氣於退火爐達一定時間的熱處理，藉以改善半導體和金屬之間的電氣特性並獲得良好的歐姆特性(例如，參考專利文獻1)。
在例如，對於矽(Si)將金(Au)作為接觸層的情況下，通常是在惰性氣體中加熱至比Si/Au的共晶溫度373℃還要高的溫度並取得良好的的接觸。首先，雖然有可能在對矽堆積鋁(Al)之後堆積多層金屬，但一般範例是也使金屬在矽上多層堆積之後，在450℃左右進行熱處理，改善Si/Al之間的接觸。
[專利文獻]特開平6-120165號公報。
不過，最近將基板極端地薄化的要求變得顯著，變得需要有新對策。薄的基板係由半導體封裝之薄型化的要求而產生，但是不從MOS裝置等等背面取出歐姆電極者，預先在厚基板的狀態下，在基板的深度方向上從表面到中途 進行切割，將已被切入的表面側貼附在研磨用的基板支持基台上，並藉由研磨和蝕刻將基板薄化至100μm或以下，已薄層化的基板係可在爾後從基板支持基台上剝離並獲得已個片化的薄層晶粒。
另一方面，如同功率元件等等般地從背面取出歐姆電極者係必須研磨基板背面側並將之薄化以後，在洗淨、乾燥之後插入濺鍍裝置等等，且在背面側堆積金屬層，再從那邊取出並插入退火爐且進行熱處理。在這當中，已薄層化之基板的處理非常困難，容易發生基板破裂等等的損傷、良率降低的大問題。
本發明係欲解決此問題者。
為了達到上述目的，第1之本發明的半導體裝置的製造方法，其特徵為具有：從半導體基板之表面側到中途進行切割並形成切入部，在基板支持基台上固定前述半導體基板之表面側的步驟；研磨前述半導體基板之背面側並對半導體基板進行薄層化的步驟；在前述半導體基板之背面堆積金屬層，在該金屬層上形成成為熱容納層之類鑽碳膜或無定形碳皮膜(以下稱為碳膜)的步驟；以0.01ms~10ms的短時間，照射功率密度1kW/cm2 ~1MW/cm2 的光至前述碳膜的表面，以既定溫度對前述金屬層和接觸該金屬層的半導體進行熱處理的步驟；以及使前述半導體基板從前述切入部分離並個片化的步驟。
另外，第2之本發明的半導體裝置的製造方法，其特徵為具有：在前述基板支持基台上固定前述半導體基板之表面側後，從前述半導體基板背面側進行研磨以及蝕刻， 並對半導體基板進行薄層化的步驟；在前述半導體基板之背面堆積金屬層，在該金屬層上形成成為熱容納層之類鑽碳膜或無定形碳皮膜(以下稱為碳膜)的步驟；以0.01ms~10ms的短時間，照射功率密度1kW/cm2 ~1MW/cm2 的光至前述碳膜的表面，以既定溫度對前述金屬層和接觸該金屬層的半導體進行熱處理的步驟；以及切割前述半導體基板並個片化的步驟。
另外，本發明係在上述第1以及第2之本發明中，特徵為：前述金屬層係作成1層至多層。
另外，本發明係在上述第1以及第2之本發明中，特徵為：前述光的照射，係使用閃光燈作為光源的脈波照射。
另外，本發明係在上述第1以及第2之本發明中，特徵為：前述光的照射，係使用脈波振盪雷射光作為光源的脈波照射。
另外，本發明係在上述第1以及第2之本發明中，特徵為：前述光的照射，係使用連續振盪雷射光作為光源之光束拂掠的光照射。
另外，本發明係在上述第1以及第2之本發明中，特徵為：前述碳膜係1μm以下之粒徑的碳微粒子之堆積膜。
另外，本發明係在上述第1以及第2之本發明中，特徵為：前述堆積膜係藉由旋轉塗佈來塗佈分散於水或者矽油系非極性溶劑的前述碳微粒子而形成。
此外，本發明的碳膜係即使是具有作為成膜時被混入之雜質的氫等等的微量雜質也無所謂。
如同上述，藉由本發明，與原封不動地處理已薄化之 狀態的基板並進行金屬形成以及接觸特性改善之熱處理的習知方法不同，在基板支持基台上貼附半導體基板的狀態下，因為進行研磨步驟的半導體基板之薄層化、在由於薄層化而變薄的半導體基板上形成金屬膜、進一步到用以改善接觸特性的熱處理為止的步驟，所以能夠不產生基板的破裂並進行這一連串的步驟。另外，之後的半導體基板的個片化能容易地進行。
另外，在本發明中，半導體基板背面的金屬層堆積之後，雖在其上形成有薄(例如0.2μm左右)的碳膜，但是此碳膜係優秀之對應光照射的吸收材料。雖然是取決於碳膜的成膜方法和成膜條件，但是作為光吸收特性，在波長400nm~1000nm的頻域，容易形成光吸收率40%者。在從此構造上照射強力的閃光燈光或雷射光的情況下，在習知方法中，金屬電極係露出在最表面上，因為此金屬的光反射率係通常非常地高，所以入射的光能量大半變成反射光而損失，無法賦予半導體/金屬界面的接觸改善。相對於此，在本發明中，效率極佳地使入射的光能量被碳膜所吸收，變化成熱能，以此能量能夠改善半導體‧金屬之間的接觸特性，所以能容易地達成在此熱製程中的節省能量化。
另外，在習知方法之爐的熱處理中，通常需要30分鐘以上的時間，但藉由本發明的處理，因為能以極短時間的光照射來完成涵蓋基板全面的處理，所以減少製程時間的效果也大。
因此，藉由採用本發明的製造方法，能夠達成在使用在背面有金屬接觸的薄半導體基板之半導體元件的製造步 驟的良率提升。另外能實現製造步驟大幅度的縮短。藉此，對100μm以下之基板的功率元件等等的領域來說是很大的進步。藉此，能降低功率MOS電晶體等等半導體元件的導通阻抗，能達成元件動作時的省電化。
以下，關於本發明的實施形態，一邊參照圖面一邊說明。不過，本發明並非被限定於此。
第1圖係表示具有標準平面型之pnp電晶體構造的半導體元件之概略截面圖。以下，將描述包含具有此pnp電晶體構造的半導體元件對應之本發明的熱處理法之製造方法的實施形態例。
首先，如第1圖所示，形成在基板1上具有pnp電晶體構造的半導體元件。作為基板1，半導體基板在此係使用矽基板。作為基板尺寸，並沒有特別限定，即使是例如直徑200mm、厚度500μm左右的一般矽基板也無所謂。半導體元件(裝置構造)係使用p+半導體基板1，在此半導體基板1上形成p-磊晶層2，介由光罩並藉由離子注入而形成n+層3、p++層4，形成為pnp電晶體。p+半導體基板1以及p-磊晶層2成為集極，n+層3成為基極，p++層4成為射極。在n+層3上以及p++層4上，因為分別獲得歐姆接觸，形成作為金屬電極的基極電極5B、射極電極5E。各n+層3以及p++層4的金屬電極之接觸部分係高濃度地摻雜入摻雜物。作為金屬電極材料係能夠使用例如Al和Au等等。另外，作為基極電極5B、射極電極5E的成膜方法，能夠使用例如濺鍍法和真空蒸發法等等。如同上述，基板 背面側係相當於集極部，但還尚未進行成為集極電極之金屬電極的形成。
接著，如第2圖所示，對於以此方式經過表面側之製程的半導體基板，亦即矽基板1，形成用以劃分各半導體元件的切入部6。亦即，對矽基板1表面側進行半切割，以50μm以下的深度置入切入部6。此切入部6係用以在最後的個片化步驟中，能夠使各晶粒(所謂半導體晶片)的每個分割變得容易。
接著，如第3圖所示，在上述基板表面側之步驟完畢之後，將矽基板1之表面側固定在研磨用的基板支持基台(以下稱為支持基台)7，進入基板背面側的研磨步驟。作為矽基板1的固定方法，亦可採用一般使用蠟8的方法、使用被用於切割膠帶的黏著劑或其他接合劑的方法、或者是藉由真空吸引而夾持於支持基台的方法等等的任一種。但是，在藉由蠟或黏著劑等等化學物質來固定的情況下，最好選擇能夠承受爾後之熱處理溫度的高耐熱性(高熔點)者、或是在高溫時不太會發生脫氣者。另外，預先挑選能承受之後的化學處理(特別是在最後研磨步驟中的鹼處理)的材料也很重要。
作為研磨步驟，以一般的手法亦可。研磨步驟係以研削、拋光的順序進行，逐漸提升到面精度。例如，在使用厚度500μm之矽基板的情況下，在基板厚度成為大約150μm左右之前先研削至350μm左右，進一步可藉由拋光研磨至大約100μm~50μm而薄層化。在此情況下，在拋光完成時，基板厚度係成為50μm~100μm左右。最後，作 為化學研磨，藉由蝕刻液進行25μm~50μm左右的蝕刻，作為完成的研磨。當然，亦可適當地決定在各研磨步驟中的研磨厚度。經過此步驟時，如第4圖所示，基板1的厚度係大約能薄層化至50μm左右。
接著，如第5圖所示，於已薄層化的基板背面(研磨面)全面，形成金屬電極9。此金屬電極9係相當於第1圖之pnp電晶體的集極電極。金屬電極9即使是例如厚度0.5μm左右的Au電極亦可。另外，作為金屬電極9，例如，如第6圖所示，可以使用已層積鋁(Al)膜91、鎳(Ni)膜92、銅(Cu)膜93、金(Au)膜94之多層構造的金屬層。例如，亦可對矽基板1的背面，形成2μm厚Al/0.3μm厚Ni/2μm厚Cu/0.1μm厚Au(最上面是Au)之多層構造的電極。但是，多層金屬膜的各膜厚並非限於此。
接著，如第7圖所示，在基板背面的金屬電極9上，形成作為光吸收層的碳膜10。此碳膜10係成為熱容納層。碳膜10係使用類鑽碳或無定形碳覆膜。作為碳膜10的厚度，50nm~500nm左右者為適當。作為碳膜10的成膜方法，能使用濺鍍法、CVD法、離子化氣相沉積法等等。例如，在濺鍍法的情況下，以直流或者交流使氬(Ar)等等的氣體放電，使石墨型的碳目標成膜在對面的基板上。另外，在CVD法的情況下，例如，使C2 H2 氣體放電，將因基板偏壓而放電分解的離子物種引入至基板側，此外，藉由施加磁場，設計成使等離子停留在高密度等等，並使碳膜堆積。但是，成膜法並不是一定被限定於此。
例如，碳膜10係採用以旋轉塗佈等等之濕式塗佈為首 的各種手法，使藉由水或者矽油系的非極性溶劑(例如乙烷矽油系的非極性溶劑)使粒徑1μm以下的石墨微粒子分散安定化的黑色墨水，形成為微粒子堆積膜亦可。微粒子堆積膜係可藉由上述手法而簡單地成膜。以製造的容易度而言，這種無定形碳膜為較佳。
作為碳膜10的膜質，係因為在之後的光照射中，會在短時間內被照射高功率密度的光，所以期待是對其具有強抵抗力的膜。無法承受高光照射功率的膜係在短時間的光照射中產生燒蝕等等的膜破壞現象，這是因為從光轉換成熱的能量變得無法有效地傳導至底層的基板層。同樣的理由，底層的金屬材料和該碳膜的黏緊性也很重要。
因此，作為碳膜10，期望是兼具有耐熱性和強度耐久性、如同類鑽碳(DLC)膜之硬度較優秀的膜。
但是，在DLC的情況下，一般大多含有氫，在此情況下，光吸收率容易下降。因此，在本發明中，在波長400nm~1000nm的頻域中，更期望能選擇碳膜的成膜條件以及膜厚來達到光吸收率80%以上。
接著，如第8圖所示，上述碳膜10成膜之後，進行光照射11。藉由此光照射11，碳膜10係由於光吸收而被加熱，碳膜10的熱係通過金屬電極9而被傳導至半導體/金屬電極界面，該界面附近被加熱，進行半導體/金屬的合金化。所謂金屬電極9係對半導體基板1進行歐姆接觸。
此光照射係能夠使照射功率密度為1kW/cm2 ~1MW/cm2 的光進行0.01ms~10ms的短時間照射。因為照射功率密度未滿1kW/cm2 ，且是短時間照射，所以在半導體1 和金屬電極9之界面的溫度不上升，不易得到目的之合金化。在超過1MW/cm2 之功率密度的情況下，如果在0.01ms~10ms的時間範圍內照射，處理溫度太高，會發生例如基板支撐用的蠟蒸發、保持偏移、擴散層的再擴散等等的不佳情形。因此，必須進行用比這時間還要短的照射，在該情況下，為了僅在金屬電極9的表面層加熱至高溫，在半導體1和金屬電極9之界面的溫度還是不上升，所以不易得到目的之合金化。另外，上述的功率密度範圍內、照射時間未滿0.01ms，不能獲得目的之溫度，不易得到合金化。超過10ms時，會產生處理溫度過高的上述不佳情形。
作為照射光源，作為具體的一例，為了在例如1ms的照射時間使光照射處的熱處理結束，能使用氙閃光燈。作為背面電極的金屬電極9，而形成膜濃1.8μm的Au單層電極、將光吸收率70%的光吸收層的碳膜10形成為膜厚0.2μm的時候，藉由在照射面上照射24.7kW/cm2 之功率密度的光達1.5ms，接觸層上產生Au和矽的共晶化，能獲得歐姆接觸。另一方面，在無碳膜而實施閃光燈之退火的情況下，無論怎麼使用高功率的光源也幾乎會反射損失，無法獲得退火效果。
此外，進行比1.5ms更長時間的退火時，在雷射照射中，高濃度的矽原子會深深地擴散至Au膜中，進行與正在溶融的Au表面層相接的碳膜與已擴散的矽原子的反應。藉由此反應來形成Au-Si-C系化合物。此化合物係使若干電極的導電性劣化，但在此Au-Si-C系化合物之導電性劣化為不佳的情況下，為了避免使碳接觸已溶融的Au，Au和 碳之間若預先設有障壁層即可。作為障壁層，並沒有特別被限定，若處於Au溶融溫度障壁層不溶融即可。作為障壁層，例如以CVD法或濺鍍法成膜的SiO2膜或SiNx膜即可。另外，作為障壁層，即使是旋塗式玻璃法等等的塗敷型之絕緣膜亦可。在蝕刻碳膜之後，這些障壁層若亦進行蝕刻也沒問題。
光照射條件係並非僅限定於此。對於相同基板構造的被照射體，即使使用照射功率密度70kW/cm2 的光源，進行約0.18ms的脈波照射，也能獲得同等的退火效果。另外，關於光脈波時間，並非被限定於上述，若可以提昇功率密度，就可進一步短時間處理。例如，如果是220kW/cm2 的功率密度，就可以進行0.01ms的短時間處理。
關於光照射功率，也不會限定於上述具體範例的數值，亦可根據基板的厚度、電極構造，甚至是閃光燈的規格來考慮。例如，作為背面電極，如第5圖、第6圖所示，對於(0.2μm)Au/(2μm)Cu/(0.3μm)Ni/(2μm)Au/(50μm)Si構造，將0.2μm厚的碳膜設置為光吸收層的時候，於此碳膜表面上以脈波寬度1ms進行表面照射功率密度約20kW/cm2 之閃光燈的退火，藉以達成矽/Au合金化退火。
其他，使例如適當的光學系統介於作為光源的閃光燈和作為被照射體的基板之間，僅在更狹窄的區域上照射高功率密度的燈光，移動照射區域並將多數脈波的光照射在基板上，也能使遍及基板全面的熱處理結束。
另外，作為基板黏著用蠟8，選擇熱傳導率低的材料等等，若可以使矽基板1與支持基台7之間有良好熱絕緣 的話，即使是照射以1脈波也不會昇溫至450℃的低功率密度之光脈波，也可以在同一處照射多數回的光脈波，也能結束熱處理。但是，為了能對基板全面，以1脈波照射來結束熱處理，而選擇光照射機構的規格為更佳。
關於光照射時的空氣控制，因為照射脈波時間在10ms以下很短，所以可在大氣中實施。空氣的壓力也未被特別限定。但是，如果能在氮或氬等等的惰性氣體空氣下嚴密地控制空氣，也有金屬表面氧化抑制的效果，此為更佳。
接著，如第9圖所示，上述光照射完畢後，能夠藉由氧等離子12使碳膜10灰化，能在最表面露出金屬電極9。雖然基板溫度能在常溫下進行，但如果加熱至50℃~100℃左右，就能高速去除。在碳膜10為碳微粒子堆積膜的情況下，藉由濕式洗淨，能夠進行光照射後的碳膜排除。
接著，如第10圖所示，從支持基台7剝下矽基板1，個片化成每個晶粒(所謂半導體晶片)13。在個片化處理中，因為到基板的中途形成切入部6，所以能從此切入部6輕易地分離，個片化變得容易。在個片化中，例如在第10圖中，首先，取下已除去蠟8且先前步驟結束的矽基板1，將此矽基板1貼附在具有黏著性的切割膠帶14上。然後，從兩側拉緊切割膠帶14，藉以對矽基板1施加壓力，矽基板1係從切入部6分裂且個片化成每個晶粒13。而且，在已被個片化的狀態下，各晶粒13係排列成隔著既定的間隔。以此方式，完成目的之半導體元件的製造。
之後，從切割膠帶14的背面照射紫外線，使黏著性喪失，並進行至各晶粒13的組裝步驟。
其他的個片化處理係也有採用超音波的方法。將支持基台7所保持的矽基板1浸漬在具有例如水或有機溶劑的洗淨槽內，進行所需之加熱的同時，賦予超音波振盪並除去蠟的超音波洗淨。在此超音波洗淨時，藉由該超音波振盪，矽基板1係從切入部6分裂且個片化。在之後的組裝步驟中，介由組裝治具一個一個地將已乾燥的各晶片組裝在所需的位置。
如果採用以上的熱處理製程，藉由條件的最佳化，僅以來自本發明之背面側的退火閃光燈，就可獲得表面側之電極和半導體表面之接觸的歐姆特性。亦即，在例如第1圖中，可改善基極電極5B以及射極電極5E之接觸的歐姆特性。這是因為藉由本發明之製程的基板研磨之薄層化步驟，能在基板厚度方向上實現溫度差少的退火。另外，藉由研磨步驟來將基板的厚度薄層化，在碳膜之電極表面的光反射損失之抑制效果以外，也成為節省反射光源之投入功率的主要原因。
關於本發明之較佳實施形態，也考慮了在上述之外的變化範例。例如，在上述的實施形態範例中，雖表示了在研磨基板之背面並進行基板薄層化之前，進行半切割的方法，但是作為其他實施形態，也有可能不進行半切割，在進行薄層化、背面電極之形成、背面電極/半導體接觸改善退火之後，從背面進行切割。
此外，作為其他實施形態，也有可能不進行半切割，在進行薄層化、背面電極之形成、背面電極/半導體接觸改善退火之後，從支持基台7取下矽基板1，從表面進行切 割。
另外，在到目前為止所述之光照射中，雖說明關於閃光燈的退火，但並不一定被限定於此，例如，也能進行雷射光之短時間光照射處理。在實現短時間照射方面，有使用脈波振盪之雷射的方法、或使用縮小光束徑的連續振盪(CW)之雷射光，對測試材料面進行此光束之拂掠而藉以達成的方法。
以下，表示其中一範例，作為被薄層化至50μm厚之直徑200mm的矽基板之背面電極，形成1.8μm的Au電極，並在其上，在波長808nm中，形成具有80%光吸收率的碳膜。作為光源，則使用波長808nm的CW半導體雷射。藉由聚光光學系統，在照射面(碳膜表面)上，將功率20W的雷射光聚為直徑180μm的圓形光束。此時，雷射光點的強度分佈係大致為高斯型，光束中央的功率密度係約70kW/cm2 。以速度1m/s來拂掠此雷射光。藉此，雷射光係在照射時間0.18ms之間照射在測試材料面的1處。此時，Au/碳界面的峰值溫度達到1000℃以上，能實現矽和Au的合金化。藉此，能獲得良好的歐姆接觸，若使用100W雷射，相當於1秒的光照射處理面積能作為約9cm2 。亦即，能使直徑200mm之基板全面的處理之所需時間在1分鐘以內，可實現高的生產量。
以此方式，因為近幾年封裝之輕量小型化的需求，基板的薄層化變成重要的技術，但藉由本發明，就不需要擔心因搬送基板等等的處理時之基板破裂等等造成的良率下降。另外，藉由本發明，可在極高速之下達成接觸改善熱 處理，而且，為了介由光吸收率高的碳膜而進行光照射，高效率地將光能量變換成熱能量，使熱退火步驟能節省能源。另外，能穩定且精度良好地進行至個片化為止的一連串處理，能以高良率來製造可靠度高的半導體裝置。
1‧‧‧基板
2‧‧‧磊晶層
3‧‧‧n+層
4‧‧‧p++層
5B‧‧‧基極電極
5E‧‧‧射極電極
6‧‧‧切入部
7‧‧‧研磨用的支持基台
8‧‧‧蠟
9‧‧‧背面電極
10‧‧‧碳膜
11‧‧‧光照射
12‧‧‧氧等離子
13‧‧‧晶粒(半導體晶片)
14‧‧‧切割膠帶
第1圖係表示採用本發明之半導體/金屬接觸形成法的半導體元件之一實施形態的截面圖。
第2圖係表示本發明之半導體裝置的製造方法的實施形態之步驟圖(其1)，將已經過處理之基板的表面側進行半切割的截面圖。
第3圖係表示本發明之半導體裝置的製造方法的實施形態之步驟圖(其2)，基板切割半的以表面方面作為黏著面經常貼的研磨用支持基台的狀態截面圖。
第4圖係表示本發明之半導體裝置的製造方法的實施形態的步驟圖(其3)，在將基板貼附於研磨用之支持基台的狀態下，進行研磨步驟並將基板薄層化之狀態的截面圖。
第5圖係表示本發明之半導體裝置的製造方法的實施形態的步驟圖(其4)，在將基板貼附於研磨用之支持基台的狀態下，在已薄層化的基板上形成背面電極之狀態的截面圖。
第6圖係表示作為本發明之背面電極而具有多層構造之範例的截面圖。
第7圖係表示本發明之半導體裝置的製造方法的實施形態的步驟圖(其5)，在形成背面電極之後，表示已形成作為光吸收層之碳膜時之狀態的截面圖。
第8圖係表示本發明之半導體裝置的製造方法的實施形態的步驟圖(其6)，在背面電極上形成碳膜之後，已進行光照射之狀態的截面圖。
第9圖係表示本發明之半導體裝置的製造方法的實施形態的步驟圖(其7)，在光照射之後，已藉由氧離子除去碳膜之狀態的截面圖。
第10圖係表示本發明之半導體裝置的製造方法的實施形態的步驟圖(其8)，將半導體基板個片化成每個晶粒之狀態的截面圖。
1‧‧‧基板
6‧‧‧切入部

Claims (14)

  1. 一種半導體裝置的製造方法，其特徵為具有：進行從半導體基板之表面側到中途的切割(dicing)而形成切入部，將前述半導體基板之表面側固定在基板支持基台上的步驟；研磨前述半導體基板之背面側而對半導體基板進行薄層化的步驟；在前述半導體基板之背面堆積金屬層，在該金屬層上形成成為熱容納層之類鑽碳膜或無定形碳皮膜(以下稱為碳膜)的步驟；以0.01ms~10ms的短時間，照射功率密度1kW/cm2 ~1MW/cm2 的光至前述碳膜的表面，以既定溫度對前述金屬層和接觸該金屬層的半導體進行熱處理的步驟；以及將前述半導體基板從前述切入部分離而個片化的步驟。
  2. 一種半導體裝置的製造方法，其特徵為具有：將前述半導體基板之表面側固定在前述基板支持基台後，從前述半導體基板背面側進行研磨以及蝕刻，對半導體基板進行薄層化的步驟；在前述半導體基板之背面堆積金屬層，在該金屬層上形成成為熱容納層之類鑽碳膜或無定形碳皮膜(以下稱為碳膜)的步驟；以0.01ms~10ms的短時間，照射功率密度1kW/cm2 ~1MW/cm2 的光至前述碳膜的表面，以既定溫度對前述金 屬層和接觸該金屬層的半導體進行熱處理的步驟；以及切割前述半導體基板而個片化的步驟。
  3. 如申請專利範圍第1項之半導體裝置的製造方法，其中，前述金屬層係作成1層至多層。
  4. 如申請專利範圍第2項之半導體裝置的製造方法，其中，前述金屬層係作成1層至多層。
  5. 如申請專利範圍第1項之半導體裝置的製造方法，其中，前述光的照射，係使用閃光燈作為光源的脈波照射。
  6. 如申請專利範圍第2項之半導體裝置的製造方法，其中，前述光的照射，係使用閃光燈作為光源的脈波照射。
  7. 如申請專利範圍第1項之半導體裝置的製造方法，其中，前述光的照射，係使用脈波振盪雷射光作為光源的脈波照射。
  8. 如申請專利範圍第2項之半導體裝置的製造方法，其中，前述光的照射，係使用脈波振盪雷射光作為光源的脈波照射。
  9. 如申請專利範圍第1項之半導體裝置的製造方法，其中，前述光的照射，係使用連續振盪雷射光作為光源之光束拂掠的光照射。
  10. 如申請專利範圍第2項之半導體裝置的製造方法，其中，前述光的照射，係使用連續振盪雷射光作為光源之光束拂掠的光照射。
  11. 如申請專利範圍第1項之半導體裝置的製造方法，其中，前述碳膜係1μm以下之粒徑的碳微粒子之堆積膜。
  12. 如申請專利範圍第2項之半導體裝置的製造方法，其 中，前述碳膜係1μm以下之粒徑的碳微粒子之堆積膜。
  13. 如申請專利範圍第11項之半導體裝置的製造方法，其中，前述堆積膜係藉由旋轉塗佈來塗佈分散於水或者矽油系(silicone oil-based)非極性溶劑的前述碳微粒子而形成。
  14. 如申請專利範圍第12項之半導體裝置的製造方法，其中，前述堆積膜係藉由旋轉塗佈來塗佈分散於水或者矽油系非極性溶劑的前述碳微粒子而形成。
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Families Citing this family (11)

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US8836130B2 (en) 2009-01-23 2014-09-16 Nichia Corporation Light emitting semiconductor element bonded to a base by a silver coating
US8816249B2 (en) 2009-04-28 2014-08-26 Industrial Technology Research Institute Apparatuses for fabricating patterns using laser diode
US8710615B2 (en) * 2011-08-31 2014-04-29 Infineon Technologies Ag Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device
CN102437169B (zh) * 2011-11-25 2013-12-25 格科微电子（上海）有限公司 图像传感器的制造方法
CN103208442A (zh) * 2012-03-15 2013-07-17 江苏汉莱科技有限公司 浸没式渗透下片
JP6296701B2 (ja) * 2012-10-15 2018-03-20 住友化学株式会社 電子デバイスの製造方法
US9171749B2 (en) 2013-11-13 2015-10-27 Globalfoundries U.S.2 Llc Handler wafer removal facilitated by the addition of an amorphous carbon layer on the handler wafer
DE102014108141A1 (de) * 2014-02-21 2015-08-27 Von Ardenne Gmbh Verfahren und Prozessieranordnung zum Bearbeiten eines Metallsubstrats
JP6425950B2 (ja) * 2014-09-12 2018-11-21 株式会社Ｓｃｒｅｅｎホールディングス 半導体製造方法および半導体製造装置
JP2017098452A (ja) * 2015-11-26 2017-06-01 株式会社ディスコ 洗浄方法
CN111446162B (zh) * 2020-03-11 2023-02-24 绍兴同芯成集成电路有限公司 一种正面切割两次减薄的晶粒生产方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020057422A1 (en) * 2000-11-15 2002-05-16 Kiyoshi Arakawa Exposure apparatus, maintenance method therefor, semiconductor device manufacturing method using the apparatus, and semiconductor manufacturing factory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190836A (ja) * 1986-02-18 1987-08-21 Nec Corp 高融点金属シリサイドの形成方法
US5166095A (en) * 1990-12-14 1992-11-24 Samsung Semiconductor, Inc. Low contact resistance process
JPH07142423A (ja) * 1993-11-12 1995-06-02 Toshiba Corp 半導体装置の製造方法
JP3013786B2 (ja) * 1996-09-11 2000-02-28 日本電気株式会社 半導体装置の製造方法
JP2003046092A (ja) * 2001-07-27 2003-02-14 Sanyo Electric Co Ltd ショットキーバリアダイオードの製造方法
JP2002075940A (ja) * 2000-08-25 2002-03-15 Hitachi Ltd 半導体装置の製造方法
JP2002100589A (ja) * 2000-09-21 2002-04-05 Hitachi Ltd 半導体装置製造方法
JP4574980B2 (ja) * 2003-12-11 2010-11-04 シャープ株式会社 半導体装置の製造方法、研削用補強部材、及びその貼り付け方法
JP5350675B2 (ja) * 2008-05-15 2013-11-27 オリンパスメディカルシステムズ株式会社 医療用保持装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020057422A1 (en) * 2000-11-15 2002-05-16 Kiyoshi Arakawa Exposure apparatus, maintenance method therefor, semiconductor device manufacturing method using the apparatus, and semiconductor manufacturing factory
US20040017551A1 (en) * 2000-11-15 2004-01-29 Canon Kabushiki Kaisha Exposure apparatus, maintenance method therefor, semiconductor device manufacturing method using the apparatus, and semiconductor manufacturing factory
US20050146696A1 (en) * 2000-11-15 2005-07-07 Canon Kabushiki Kaisha Exposure apparatus, maintenance method therefor, semiconductor device manufacturing method using the apparatus, and semiconductor manufacturing factory

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