TWI469186B - 非極性三族氮化物膜、使用其製造之裝置及生長其之方法 - Google Patents

非極性三族氮化物膜、使用其製造之裝置及生長其之方法 Download PDF

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TWI469186B
TWI469186B TW097122460A TW97122460A TWI469186B TW I469186 B TWI469186 B TW I469186B TW 097122460 A TW097122460 A TW 097122460A TW 97122460 A TW97122460 A TW 97122460A TW I469186 B TWI469186 B TW I469186B
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film
top surface
group iii
chamfer angle
iii nitride
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TW097122460A
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Chinese (zh)
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TW200915394A (en
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平井朝子
賈中元
齊藤真
山田永
磯憲司
丹巴爾斯 史蒂芬Ｐ
中村秀治
史貝克 詹姆士Ｓ
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美國加利福尼亞大學董事會
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    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
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TW097122460A 2007-06-15 2008-06-16 非極性三族氮化物膜、使用其製造之裝置及生長其之方法 TWI469186B (zh)

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