TWI469177B - 用於帶電粒子束的鏡片系統、裝置及方法 - Google Patents
用於帶電粒子束的鏡片系統、裝置及方法 Download PDFInfo
- Publication number
- TWI469177B TWI469177B TW100128385A TW100128385A TWI469177B TW I469177 B TWI469177 B TW I469177B TW 100128385 A TW100128385 A TW 100128385A TW 100128385 A TW100128385 A TW 100128385A TW I469177 B TWI469177 B TW I469177B
- Authority
- TW
- Taiwan
- Prior art keywords
- lens
- openings
- lens system
- charged particle
- coil
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims description 48
- 238000000034 method Methods 0.000 title claims description 16
- 230000004907 flux Effects 0.000 claims description 68
- 230000005284 excitation Effects 0.000 claims description 37
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000000696 magnetic material Substances 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 description 22
- 230000000694 effects Effects 0.000 description 8
- 238000007689 inspection Methods 0.000 description 7
- 230000004075 alteration Effects 0.000 description 6
- 201000009310 astigmatism Diseases 0.000 description 5
- 230000005405 multipole Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000035699 permeability Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000595 mu-metal Inorganic materials 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/14—Lenses magnetic
- H01J37/141—Electromagnetic lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
- H01J2237/04922—Lens systems electromagnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/14—Lenses magnetic
- H01J2237/1405—Constructional details
- H01J2237/141—Coils
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electron Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10172528A EP2418672B1 (en) | 2010-08-11 | 2010-08-11 | Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201214499A TW201214499A (en) | 2012-04-01 |
| TWI469177B true TWI469177B (zh) | 2015-01-11 |
Family
ID=43648718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100128385A TWI469177B (zh) | 2010-08-11 | 2011-08-09 | 用於帶電粒子束的鏡片系統、裝置及方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8481958B2 (enExample) |
| EP (1) | EP2418672B1 (enExample) |
| JP (1) | JP5685503B2 (enExample) |
| KR (1) | KR101854813B1 (enExample) |
| TW (1) | TWI469177B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9341936B2 (en) | 2008-09-01 | 2016-05-17 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
| WO2013142068A1 (en) * | 2012-03-19 | 2013-09-26 | Kla-Tencor Corporation | Pillar-supported array of micro electron lenses |
| US9343267B2 (en) | 2012-04-18 | 2016-05-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
| KR102154105B1 (ko) | 2012-04-18 | 2020-09-09 | 디2에스, 인코포레이티드 | 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템 |
| JP5667618B2 (ja) * | 2012-12-14 | 2015-02-12 | 株式会社アドバンテスト | 電磁レンズ及び電子ビーム露光装置 |
| US9824851B2 (en) * | 2013-01-20 | 2017-11-21 | William M. Tong | Charge drain coating for electron-optical MEMS |
| US10347460B2 (en) | 2017-03-01 | 2019-07-09 | Dongfang Jingyuan Electron Limited | Patterned substrate imaging using multiple electron beams |
| DE102017205231B3 (de) * | 2017-03-28 | 2018-08-09 | Carl Zeiss Microscopy Gmbh | Teilchenoptische Vorrichtung und Teilchenstrahlsystem |
| JP7516366B2 (ja) * | 2018-11-16 | 2024-07-16 | エーエスエムエル ネザーランズ ビー．ブイ． | 電磁複合レンズ及びそのようなレンズを備えた荷電粒子光学システム |
| DE102019004124B4 (de) | 2019-06-13 | 2024-03-21 | Carl Zeiss Multisem Gmbh | Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4209702A (en) * | 1977-07-25 | 1980-06-24 | Kabushiki Kaisha Akashi Seisakusho | Multiple electron lens |
| TW439095B (en) * | 1998-03-31 | 2001-06-07 | Applied Materials Inc | Use of variable impedance having rotating core to control coil sputter distribution |
| US20030001095A1 (en) * | 2001-07-02 | 2003-01-02 | Schlumberger Technologies, Inc. | Method and apparatus for multiple charged particle beams |
| CN1672233A (zh) * | 2002-05-22 | 2005-09-21 | 应用材料股份有限公司 | 一种带电粒子束柱体部及其导引方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5116754B1 (enExample) | 1970-03-04 | 1976-05-27 | ||
| JPS4929089B1 (enExample) * | 1970-05-13 | 1974-08-01 | ||
| EP1432007B1 (en) | 2002-12-17 | 2010-03-10 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Multi-axis compound lens, beam system making use of the compound lens, and method of manufacturing the compound lens |
| DE602004026463D1 (de) * | 2004-12-30 | 2010-05-20 | Integrated Circuit Testing | Mehrfach-Linsenanordnung und Teilchenstrahlgerät mit selbiger |
-
2010
- 2010-08-11 EP EP10172528A patent/EP2418672B1/en not_active Not-in-force
- 2010-08-13 US US12/856,152 patent/US8481958B2/en active Active
-
2011
- 2011-08-09 TW TW100128385A patent/TWI469177B/zh not_active IP Right Cessation
- 2011-08-10 KR KR1020110079521A patent/KR101854813B1/ko not_active Expired - Fee Related
- 2011-08-10 JP JP2011174538A patent/JP5685503B2/ja not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4209702A (en) * | 1977-07-25 | 1980-06-24 | Kabushiki Kaisha Akashi Seisakusho | Multiple electron lens |
| TW439095B (en) * | 1998-03-31 | 2001-06-07 | Applied Materials Inc | Use of variable impedance having rotating core to control coil sputter distribution |
| US20030001095A1 (en) * | 2001-07-02 | 2003-01-02 | Schlumberger Technologies, Inc. | Method and apparatus for multiple charged particle beams |
| CN1672233A (zh) * | 2002-05-22 | 2005-09-21 | 应用材料股份有限公司 | 一种带电粒子束柱体部及其导引方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2418672A1 (en) | 2012-02-15 |
| KR101854813B1 (ko) | 2018-05-08 |
| KR20120022620A (ko) | 2012-03-12 |
| US8481958B2 (en) | 2013-07-09 |
| EP2418672B1 (en) | 2013-03-20 |
| JP5685503B2 (ja) | 2015-03-18 |
| US20120037813A1 (en) | 2012-02-16 |
| JP2012038732A (ja) | 2012-02-23 |
| TW201214499A (en) | 2012-04-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |