JP5685503B2 - 多軸レンズ、複合レンズを利用したビームシステム、及び複合レンズの製造方法 - Google Patents

多軸レンズ、複合レンズを利用したビームシステム、及び複合レンズの製造方法 Download PDF

Info

Publication number
JP5685503B2
JP5685503B2 JP2011174538A JP2011174538A JP5685503B2 JP 5685503 B2 JP5685503 B2 JP 5685503B2 JP 2011174538 A JP2011174538 A JP 2011174538A JP 2011174538 A JP2011174538 A JP 2011174538A JP 5685503 B2 JP5685503 B2 JP 5685503B2
Authority
JP
Japan
Prior art keywords
lens
openings
lens system
coil
charged particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011174538A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012038732A (ja
JP2012038732A5 (enExample
Inventor
ラニオ ステファン
ラニオ ステファン
Original Assignee
アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー
アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー, アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー filed Critical アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー
Publication of JP2012038732A publication Critical patent/JP2012038732A/ja
Publication of JP2012038732A5 publication Critical patent/JP2012038732A5/ja
Application granted granted Critical
Publication of JP5685503B2 publication Critical patent/JP5685503B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04922—Lens systems electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/1405—Constructional details
    • H01J2237/141—Coils

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
JP2011174538A 2010-08-11 2011-08-10 多軸レンズ、複合レンズを利用したビームシステム、及び複合レンズの製造方法 Expired - Fee Related JP5685503B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10172528A EP2418672B1 (en) 2010-08-11 2010-08-11 Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
EP10172528.1 2010-08-11

Publications (3)

Publication Number Publication Date
JP2012038732A JP2012038732A (ja) 2012-02-23
JP2012038732A5 JP2012038732A5 (enExample) 2014-09-25
JP5685503B2 true JP5685503B2 (ja) 2015-03-18

Family

ID=43648718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011174538A Expired - Fee Related JP5685503B2 (ja) 2010-08-11 2011-08-10 多軸レンズ、複合レンズを利用したビームシステム、及び複合レンズの製造方法

Country Status (5)

Country Link
US (1) US8481958B2 (enExample)
EP (1) EP2418672B1 (enExample)
JP (1) JP5685503B2 (enExample)
KR (1) KR101854813B1 (enExample)
TW (1) TWI469177B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8719739B2 (en) 2011-09-19 2014-05-06 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
JP2015511069A (ja) * 2012-03-19 2015-04-13 ケーエルエー−テンカー コーポレイション 柱で支持されたマイクロ電子レンズアレイ
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
JP5667618B2 (ja) * 2012-12-14 2015-02-12 株式会社アドバンテスト 電磁レンズ及び電子ビーム露光装置
US9824851B2 (en) * 2013-01-20 2017-11-21 William M. Tong Charge drain coating for electron-optical MEMS
US10347460B2 (en) 2017-03-01 2019-07-09 Dongfang Jingyuan Electron Limited Patterned substrate imaging using multiple electron beams
DE102017205231B3 (de) * 2017-03-28 2018-08-09 Carl Zeiss Microscopy Gmbh Teilchenoptische Vorrichtung und Teilchenstrahlsystem
IL283084B2 (en) * 2018-11-16 2026-01-01 Asml Netherlands Bv Lenses with an electromagnetic compound and a charged particle optical system with such lenses
DE102019004124B4 (de) * 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116754B1 (enExample) 1970-03-04 1976-05-27
JPS4929089B1 (enExample) * 1970-05-13 1974-08-01
JPS5423476A (en) * 1977-07-25 1979-02-22 Akashi Seisakusho Kk Composite electron lens
US6254738B1 (en) * 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6750455B2 (en) * 2001-07-02 2004-06-15 Applied Materials, Inc. Method and apparatus for multiple charged particle beams
US7223974B2 (en) * 2002-05-22 2007-05-29 Applied Materials, Israel, Ltd. Charged particle beam column and method for directing a charged particle beam
EP1432007B1 (en) 2002-12-17 2010-03-10 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis compound lens, beam system making use of the compound lens, and method of manufacturing the compound lens
DE602004026463D1 (de) * 2004-12-30 2010-05-20 Integrated Circuit Testing Mehrfach-Linsenanordnung und Teilchenstrahlgerät mit selbiger

Also Published As

Publication number Publication date
TW201214499A (en) 2012-04-01
US8481958B2 (en) 2013-07-09
KR101854813B1 (ko) 2018-05-08
EP2418672A1 (en) 2012-02-15
TWI469177B (zh) 2015-01-11
US20120037813A1 (en) 2012-02-16
JP2012038732A (ja) 2012-02-23
KR20120022620A (ko) 2012-03-12
EP2418672B1 (en) 2013-03-20

Similar Documents

Publication Publication Date Title
JP2012038732A (ja) 多軸レンズ、複合レンズを利用したビームシステム、及び複合レンズの製造方法
TWI751556B (zh) 用於以初級帶電粒子小束陣列檢查樣本的帶電粒子束裝置
US8158954B2 (en) Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
JP7771004B2 (ja) 電磁レンズ及び荷電粒子光学装置
KR101861210B1 (ko) 전자 렌즈 및 전자빔 장치
US7253417B2 (en) Multi-axis compound lens, beam system making use of the compound lens, and method using the compound lens
JP5738378B2 (ja) オクタポール装置及びスポットサイズ向上方法
EP4276878A1 (en) Adjustable permanent magnetic lens having shunting device
KR20230079266A (ko) 조정 가능한 작동 거리 주위에서 고속 오토포커스를 갖는 복수 입자 빔 현미경 및 관련 방법
US20160111251A1 (en) Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
TW201442052A (zh) 具有低軸漏洩場的永久磁鐵基高效能多軸浸沒電子透鏡陣列
US20240021403A1 (en) Adjustable Permanent Magnetic Lens Having Thermal Control Device
US20240212970A1 (en) Adjustable Magnetic Lens Having Permanent-Magnetic and Electromagnetic Components
JP5666227B2 (ja) 色収差補正ビーム偏向器、色収差補正ビーム分離器、荷電粒子デバイス、色収差補正ビーム偏向器を動作させる方法、及び色収差補正ビーム分離器を動作させる方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140731

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140812

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20140812

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20140902

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140909

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141205

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141222

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150119

R150 Certificate of patent or registration of utility model

Ref document number: 5685503

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees