JP5685503B2 - 多軸レンズ、複合レンズを利用したビームシステム、及び複合レンズの製造方法 - Google Patents

多軸レンズ、複合レンズを利用したビームシステム、及び複合レンズの製造方法 Download PDF

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Publication number
JP5685503B2
JP5685503B2 JP2011174538A JP2011174538A JP5685503B2 JP 5685503 B2 JP5685503 B2 JP 5685503B2 JP 2011174538 A JP2011174538 A JP 2011174538A JP 2011174538 A JP2011174538 A JP 2011174538A JP 5685503 B2 JP5685503 B2 JP 5685503B2
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Japan
Prior art keywords
lens
openings
lens system
coil
charged particle
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Japanese (ja)
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JP2012038732A5 (enExample
JP2012038732A (ja
Inventor
ラニオ ステファン
ラニオ ステファン
Original Assignee
アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー
アイシーティー インテグレーテッド サーキット テスティング ゲゼルシャフト フィーア ハルプライタープリーフテヒニック エム ベー ハー
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Publication of JP2012038732A publication Critical patent/JP2012038732A/ja
Publication of JP2012038732A5 publication Critical patent/JP2012038732A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04922—Lens systems electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/1405—Constructional details
    • H01J2237/141—Coils

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
JP2011174538A 2010-08-11 2011-08-10 多軸レンズ、複合レンズを利用したビームシステム、及び複合レンズの製造方法 Expired - Fee Related JP5685503B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10172528A EP2418672B1 (en) 2010-08-11 2010-08-11 Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
EP10172528.1 2010-08-11

Publications (3)

Publication Number Publication Date
JP2012038732A JP2012038732A (ja) 2012-02-23
JP2012038732A5 JP2012038732A5 (enExample) 2014-09-25
JP5685503B2 true JP5685503B2 (ja) 2015-03-18

Family

ID=43648718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011174538A Expired - Fee Related JP5685503B2 (ja) 2010-08-11 2011-08-10 多軸レンズ、複合レンズを利用したビームシステム、及び複合レンズの製造方法

Country Status (5)

Country Link
US (1) US8481958B2 (enExample)
EP (1) EP2418672B1 (enExample)
JP (1) JP5685503B2 (enExample)
KR (1) KR101854813B1 (enExample)
TW (1) TWI469177B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
WO2013142068A1 (en) * 2012-03-19 2013-09-26 Kla-Tencor Corporation Pillar-supported array of micro electron lenses
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
KR102154105B1 (ko) 2012-04-18 2020-09-09 디2에스, 인코포레이티드 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템
JP5667618B2 (ja) * 2012-12-14 2015-02-12 株式会社アドバンテスト 電磁レンズ及び電子ビーム露光装置
US9824851B2 (en) * 2013-01-20 2017-11-21 William M. Tong Charge drain coating for electron-optical MEMS
US10347460B2 (en) 2017-03-01 2019-07-09 Dongfang Jingyuan Electron Limited Patterned substrate imaging using multiple electron beams
DE102017205231B3 (de) * 2017-03-28 2018-08-09 Carl Zeiss Microscopy Gmbh Teilchenoptische Vorrichtung und Teilchenstrahlsystem
JP7516366B2 (ja) * 2018-11-16 2024-07-16 エーエスエムエル ネザーランズ ビー．ブイ． 電磁複合レンズ及びそのようなレンズを備えた荷電粒子光学システム
DE102019004124B4 (de) 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116754B1 (enExample) 1970-03-04 1976-05-27
JPS4929089B1 (enExample) * 1970-05-13 1974-08-01
JPS5423476A (en) * 1977-07-25 1979-02-22 Akashi Seisakusho Kk Composite electron lens
US6254738B1 (en) * 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6750455B2 (en) * 2001-07-02 2004-06-15 Applied Materials, Inc. Method and apparatus for multiple charged particle beams
US7223974B2 (en) * 2002-05-22 2007-05-29 Applied Materials, Israel, Ltd. Charged particle beam column and method for directing a charged particle beam
EP1432007B1 (en) 2002-12-17 2010-03-10 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis compound lens, beam system making use of the compound lens, and method of manufacturing the compound lens
DE602004026463D1 (de) * 2004-12-30 2010-05-20 Integrated Circuit Testing Mehrfach-Linsenanordnung und Teilchenstrahlgerät mit selbiger

Also Published As

Publication number Publication date
EP2418672A1 (en) 2012-02-15
KR101854813B1 (ko) 2018-05-08
KR20120022620A (ko) 2012-03-12
US8481958B2 (en) 2013-07-09
EP2418672B1 (en) 2013-03-20
US20120037813A1 (en) 2012-02-16
JP2012038732A (ja) 2012-02-23
TWI469177B (zh) 2015-01-11
TW201214499A (en) 2012-04-01

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