KR101854813B1 - 다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법 - Google Patents

다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법 Download PDF

Info

Publication number
KR101854813B1
KR101854813B1 KR1020110079521A KR20110079521A KR101854813B1 KR 101854813 B1 KR101854813 B1 KR 101854813B1 KR 1020110079521 A KR1020110079521 A KR 1020110079521A KR 20110079521 A KR20110079521 A KR 20110079521A KR 101854813 B1 KR101854813 B1 KR 101854813B1
Authority
KR
South Korea
Prior art keywords
lens
apertures
coil
lens apertures
charged particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110079521A
Other languages
English (en)
Korean (ko)
Other versions
KR20120022620A (ko
Inventor
슈테판 라니오
Original Assignee
아이씨티 인티그레이티드 써킷 테스팅 게젤샤프트 퓌어 할프라이터프뤼프테크닉 엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아이씨티 인티그레이티드 써킷 테스팅 게젤샤프트 퓌어 할프라이터프뤼프테크닉 엠베하 filed Critical 아이씨티 인티그레이티드 써킷 테스팅 게젤샤프트 퓌어 할프라이터프뤼프테크닉 엠베하
Publication of KR20120022620A publication Critical patent/KR20120022620A/ko
Application granted granted Critical
Publication of KR101854813B1 publication Critical patent/KR101854813B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04922—Lens systems electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/1405—Constructional details
    • H01J2237/141—Coils

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
KR1020110079521A 2010-08-11 2011-08-10 다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법 Expired - Fee Related KR101854813B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10172528A EP2418672B1 (en) 2010-08-11 2010-08-11 Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
EP10172528.1 2010-08-11

Publications (2)

Publication Number Publication Date
KR20120022620A KR20120022620A (ko) 2012-03-12
KR101854813B1 true KR101854813B1 (ko) 2018-05-08

Family

ID=43648718

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110079521A Expired - Fee Related KR101854813B1 (ko) 2010-08-11 2011-08-10 다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법

Country Status (5)

Country Link
US (1) US8481958B2 (enExample)
EP (1) EP2418672B1 (enExample)
JP (1) JP5685503B2 (enExample)
KR (1) KR101854813B1 (enExample)
TW (1) TWI469177B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
WO2013142068A1 (en) * 2012-03-19 2013-09-26 Kla-Tencor Corporation Pillar-supported array of micro electron lenses
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
KR102154105B1 (ko) 2012-04-18 2020-09-09 디2에스, 인코포레이티드 하전 입자 빔 리소그라피를 이용하여 패턴들을 형성하기 위한 방법 및 시스템
JP5667618B2 (ja) * 2012-12-14 2015-02-12 株式会社アドバンテスト 電磁レンズ及び電子ビーム露光装置
US9824851B2 (en) * 2013-01-20 2017-11-21 William M. Tong Charge drain coating for electron-optical MEMS
US10347460B2 (en) 2017-03-01 2019-07-09 Dongfang Jingyuan Electron Limited Patterned substrate imaging using multiple electron beams
DE102017205231B3 (de) * 2017-03-28 2018-08-09 Carl Zeiss Microscopy Gmbh Teilchenoptische Vorrichtung und Teilchenstrahlsystem
JP7516366B2 (ja) * 2018-11-16 2024-07-16 エーエスエムエル ネザーランズ ビー．ブイ． 電磁複合レンズ及びそのようなレンズを備えた荷電粒子光学システム
DE102019004124B4 (de) 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116754B1 (enExample) 1970-03-04 1976-05-27
JPS4929089B1 (enExample) * 1970-05-13 1974-08-01
JPS5423476A (en) * 1977-07-25 1979-02-22 Akashi Seisakusho Kk Composite electron lens
US6254738B1 (en) * 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6750455B2 (en) * 2001-07-02 2004-06-15 Applied Materials, Inc. Method and apparatus for multiple charged particle beams
US7223974B2 (en) * 2002-05-22 2007-05-29 Applied Materials, Israel, Ltd. Charged particle beam column and method for directing a charged particle beam
EP1432007B1 (en) 2002-12-17 2010-03-10 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis compound lens, beam system making use of the compound lens, and method of manufacturing the compound lens
DE602004026463D1 (de) * 2004-12-30 2010-05-20 Integrated Circuit Testing Mehrfach-Linsenanordnung und Teilchenstrahlgerät mit selbiger

Also Published As

Publication number Publication date
EP2418672A1 (en) 2012-02-15
KR20120022620A (ko) 2012-03-12
US8481958B2 (en) 2013-07-09
EP2418672B1 (en) 2013-03-20
JP5685503B2 (ja) 2015-03-18
US20120037813A1 (en) 2012-02-16
JP2012038732A (ja) 2012-02-23
TWI469177B (zh) 2015-01-11
TW201214499A (en) 2012-04-01

Similar Documents

Publication Publication Date Title
KR101854813B1 (ko) 다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법
US8158954B2 (en) Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
TWI751556B (zh) 用於以初級帶電粒子小束陣列檢查樣本的帶電粒子束裝置
US7253417B2 (en) Multi-axis compound lens, beam system making use of the compound lens, and method using the compound lens
US8791425B2 (en) Multi-axis magnetic lens for focusing a plurality of charged particle beams
TWI581299B (zh) 具有低軸漏溢場的永久磁鐵基高效能多軸浸沒電子透鏡陣列
JP2013546152A (ja) 多軸磁気レンズを有するマルチ荷電粒子ビーム装置
JP2013511820A (ja) 多軸磁気レンズを有するマルチ荷電粒子ビーム装置
EP4276878A1 (en) Adjustable permanent magnetic lens having shunting device
US12500060B2 (en) Electromagnetic lens
EP4120314B1 (en) Electromagnetic lens
US20240212970A1 (en) Adjustable Magnetic Lens Having Permanent-Magnetic and Electromagnetic Components
US8835867B2 (en) Multi-axis magnetic lens for focusing a plurality of charged particle beams
US20240021403A1 (en) Adjustable Permanent Magnetic Lens Having Thermal Control Device
JP2007035386A (ja) 電子線装置及び該装置を用いたデバイス製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20230428

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20230428