KR101854813B1 - 다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법 - Google Patents

다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법 Download PDF

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Publication number
KR101854813B1
KR101854813B1 KR1020110079521A KR20110079521A KR101854813B1 KR 101854813 B1 KR101854813 B1 KR 101854813B1 KR 1020110079521 A KR1020110079521 A KR 1020110079521A KR 20110079521 A KR20110079521 A KR 20110079521A KR 101854813 B1 KR101854813 B1 KR 101854813B1
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KR
South Korea
Prior art keywords
lens
apertures
coil
lens apertures
charged particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110079521A
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English (en)
Korean (ko)
Other versions
KR20120022620A (ko
Inventor
슈테판 라니오
Original Assignee
아이씨티 인티그레이티드 써킷 테스팅 게젤샤프트 퓌어 할프라이터프뤼프테크닉 엠베하
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Application filed by 아이씨티 인티그레이티드 써킷 테스팅 게젤샤프트 퓌어 할프라이터프뤼프테크닉 엠베하 filed Critical 아이씨티 인티그레이티드 써킷 테스팅 게젤샤프트 퓌어 할프라이터프뤼프테크닉 엠베하
Publication of KR20120022620A publication Critical patent/KR20120022620A/ko
Application granted granted Critical
Publication of KR101854813B1 publication Critical patent/KR101854813B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/14—Lenses magnetic
    • H01J37/141—Electromagnetic lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H01J2237/04922—Lens systems electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/1405—Constructional details
    • H01J2237/141—Coils

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
KR1020110079521A 2010-08-11 2011-08-10 다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법 Expired - Fee Related KR101854813B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP10172528A EP2418672B1 (en) 2010-08-11 2010-08-11 Multi-axis lens, beam system making use of the compound lens, and method of manufacturing the compound lens
EP10172528.1 2010-08-11

Publications (2)

Publication Number Publication Date
KR20120022620A KR20120022620A (ko) 2012-03-12
KR101854813B1 true KR101854813B1 (ko) 2018-05-08

Family

ID=43648718

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110079521A Expired - Fee Related KR101854813B1 (ko) 2010-08-11 2011-08-10 다축 렌즈, 합성 렌즈를 사용하는 빔 시스템, 및 합성 렌즈를 제조하는 방법

Country Status (5)

Country Link
US (1) US8481958B2 (enExample)
EP (1) EP2418672B1 (enExample)
JP (1) JP5685503B2 (enExample)
KR (1) KR101854813B1 (enExample)
TW (1) TWI469177B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US8719739B2 (en) 2011-09-19 2014-05-06 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
JP2015511069A (ja) * 2012-03-19 2015-04-13 ケーエルエー−テンカー コーポレイション 柱で支持されたマイクロ電子レンズアレイ
US9343267B2 (en) 2012-04-18 2016-05-17 D2S, Inc. Method and system for dimensional uniformity using charged particle beam lithography
JP5667618B2 (ja) * 2012-12-14 2015-02-12 株式会社アドバンテスト 電磁レンズ及び電子ビーム露光装置
US9824851B2 (en) * 2013-01-20 2017-11-21 William M. Tong Charge drain coating for electron-optical MEMS
US10347460B2 (en) 2017-03-01 2019-07-09 Dongfang Jingyuan Electron Limited Patterned substrate imaging using multiple electron beams
DE102017205231B3 (de) * 2017-03-28 2018-08-09 Carl Zeiss Microscopy Gmbh Teilchenoptische Vorrichtung und Teilchenstrahlsystem
IL283084B2 (en) * 2018-11-16 2026-01-01 Asml Netherlands Bv Lenses with an electromagnetic compound and a charged particle optical system with such lenses
DE102019004124B4 (de) * 2019-06-13 2024-03-21 Carl Zeiss Multisem Gmbh Teilchenstrahl-System zur azimutalen Ablenkung von Einzel-Teilchenstrahlen sowie seine Verwendung und Verfahren zur Azimut-Korrektur bei einem Teilchenstrahl-System

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116754B1 (enExample) 1970-03-04 1976-05-27
JPS4929089B1 (enExample) * 1970-05-13 1974-08-01
JPS5423476A (en) * 1977-07-25 1979-02-22 Akashi Seisakusho Kk Composite electron lens
US6254738B1 (en) * 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6750455B2 (en) * 2001-07-02 2004-06-15 Applied Materials, Inc. Method and apparatus for multiple charged particle beams
US7223974B2 (en) * 2002-05-22 2007-05-29 Applied Materials, Israel, Ltd. Charged particle beam column and method for directing a charged particle beam
EP1432007B1 (en) 2002-12-17 2010-03-10 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Multi-axis compound lens, beam system making use of the compound lens, and method of manufacturing the compound lens
DE602004026463D1 (de) * 2004-12-30 2010-05-20 Integrated Circuit Testing Mehrfach-Linsenanordnung und Teilchenstrahlgerät mit selbiger

Also Published As

Publication number Publication date
TW201214499A (en) 2012-04-01
US8481958B2 (en) 2013-07-09
EP2418672A1 (en) 2012-02-15
JP5685503B2 (ja) 2015-03-18
TWI469177B (zh) 2015-01-11
US20120037813A1 (en) 2012-02-16
JP2012038732A (ja) 2012-02-23
KR20120022620A (ko) 2012-03-12
EP2418672B1 (en) 2013-03-20

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