TWI466749B - Method for Segmentation of Fragile Material Substrate - Google Patents

Method for Segmentation of Fragile Material Substrate Download PDF

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TWI466749B
TWI466749B TW97130472A TW97130472A TWI466749B TW I466749 B TWI466749 B TW I466749B TW 97130472 A TW97130472 A TW 97130472A TW 97130472 A TW97130472 A TW 97130472A TW I466749 B TWI466749 B TW I466749B
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crack
substrate
groove
periodic
depth
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TW97130472A
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TW200920534A (en
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Norifumi Arima
Koji Yamamoto
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Mitsuboshi Diamond Ind Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/027Scoring tool holders; Driving mechanisms therefor
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/033Apparatus for opening score lines in glass sheets
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/09Severing cooled glass by thermal shock
    • C03B33/091Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/04Arrangements of vacuum systems or suction cups

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thermal Sciences (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Dicing (AREA)

Description

脆性材料基板之分割方法Method for dividing brittle material substrate

本發明係關於一種照射雷射光束而對脆性材料基板進行分割之方法。此處,脆性材料基板包括玻璃基板、藍寶石基板、燒結材料之陶瓷、單晶矽、半導體晶圓、陶瓷基板等。The present invention relates to a method of dividing a brittle material substrate by irradiating a laser beam. Here, the brittle material substrate includes a glass substrate, a sapphire substrate, a ceramic of a sintered material, a single crystal germanium, a semiconductor wafer, a ceramic substrate, or the like.

對於玻璃等之脆性材料基板而言,採用如下的基板分割方法:沿著設定於基板之分割預定線照射雷射而形成裂痕(加工部分之材料未被除去)或槽(加工部分之材料被除去),並沿著所形成的裂痕或槽進行斷裂處理,藉此分割基板。In the case of a brittle material substrate such as glass, a substrate division method is employed in which a laser is irradiated along a predetermined dividing line set on a substrate to form a crack (the material of the processed portion is not removed) or a groove (the material of the processed portion is removed). And, the fracture process is performed along the formed cracks or grooves, thereby dividing the substrate.

圖12係表示藉由雷射照射而形成於基板內之槽或裂痕的一例的示意剖面圖。圖12(a)表示藉由雷射剝蝕加工所形成之槽,圖12(b)表示藉由雷射剝蝕加工所形成之槽以及裂痕,又,圖12(c)表示藉由雷射劃線加工所形成之裂痕。Fig. 12 is a schematic cross-sectional view showing an example of a groove or a crack formed in a substrate by laser irradiation. Fig. 12(a) shows a groove formed by laser ablation processing, Fig. 12(b) shows a groove formed by laser ablation processing, and a crack, and Fig. 12(c) shows a line marked by laser The crack formed by the processing.

雷射剝蝕加工中,沿著分割預定線掃描UV雷射等雷射光束,且以基板之熔融溫度以上的溫度進行加熱而使其蒸散,藉此形成槽101,或者不僅形成槽101而且形成誘發於槽101底部之裂痕102。In the laser ablation processing, a laser beam such as a UV laser beam is scanned along a predetermined dividing line, and heated at a temperature equal to or higher than the melting temperature of the substrate to be evaded, thereby forming the groove 101, or forming not only the groove 101 but also the induced beam. A crack 102 at the bottom of the groove 101.

又,雷射劃線加工中,將CO2 雷射等之雷射光束照射於加工對象基板而於加工面形成光束點,並掃描該光束 點,以軟化點以下之溫度下沿著分割預定線進行加熱,之後沿著光束點之軌跡進行冷卻。藉此,根據加熱部位周圍所產生的壓縮應力與冷卻部位周圍所產生的拉伸應力之間的應力差,而形成裂痕103(例如,參照專利文獻1)。Further, in the laser scribing process, a laser beam such as a CO 2 laser is irradiated onto the substrate to be processed to form a beam spot on the processed surface, and the beam spot is scanned to be along the dividing line at a temperature lower than the softening point. Heating is performed, followed by cooling along the trajectory of the beam spot. Thereby, the crack 103 is formed according to the stress difference between the compressive stress generated around the heating portion and the tensile stress generated around the cooling portion (for example, refer to Patent Document 1).

繼而,沿著藉由雷射剝蝕加工所形成之槽101(或槽101與裂痕102)、或者藉由雷射劃線加工所形成之裂痕103,自基板之背面R側(形成有槽或裂痕之面的相反面)施加彎曲力矩M(斷裂壓)而進行斷裂處理,藉此,使裂痕102、103或槽101在板厚方向上延伸,從而分割基板。Then, along the groove 101 (or the groove 101 and the crack 102) formed by the laser ablation processing, or the crack 103 formed by laser scribing, from the back side R of the substrate (grooves or cracks are formed) The opposite side of the surface is subjected to a fracture treatment by applying a bending moment M (breaking pressure), whereby the cracks 102, 103 or the grooves 101 are extended in the thickness direction to divide the substrate.

通常,分割脆性材料基板時,為了可僅以較小之彎曲力矩(斷裂壓)來簡單且切實地進行斷裂處理,較佳為,預先儘可能於板厚方向上形成較深的裂痕或槽。又,為了減少分割面之「缺口」之產生而使分割面之品質良好,最好預先於板厚方向上形成較深的裂痕或槽。In general, when the brittle material substrate is divided, in order to perform the fracture treatment simply and reliably with a small bending moment (breaking pressure), it is preferable to form a deep crack or groove as much as possible in the thickness direction. Further, in order to reduce the occurrence of the "notch" of the split surface and to improve the quality of the split surface, it is preferable to form a deep crack or groove in the thickness direction in advance.

然而,雷射剝蝕加工中,就技術方面而言可形成較深的槽(或槽與裂痕),但因槽之深度與加工時間大致成正比,故若欲形成較深之槽,則需要較長的加工時間。然而,進行剝蝕加工時,加工時間越長,則自成為槽之部位所蒸散的基板物質之量越多,其會污染周圍的基板表面。因此,就加工時間、基板污染之觀點考慮,形成較深的槽並不實用。故,較理想的為,藉由較淺之槽來確實地分割。However, in laser ablation processing, deep grooves (or grooves and cracks) can be formed in terms of technology, but since the depth of the groove is roughly proportional to the processing time, if a deep groove is to be formed, it is necessary to Long processing time. However, when the ablation processing is performed, the longer the processing time, the more the amount of the substrate material evaporated from the portion where the groove is formed, which contaminates the surface of the surrounding substrate. Therefore, it is not practical to form a deep groove from the viewpoint of processing time and substrate contamination. Therefore, it is desirable to divide by a shallow groove.

另一方面,雷射劃線加工中,基板物質不會蒸散,故不會產生基板污染之問題,但會由於基板內部所產生之熱應變之影響而阻礙裂痕較深地延伸,在技術方面較為困 難。以下,就阻礙裂痕延伸之基板內的熱應變的影響加以說明。On the other hand, in laser scribing, the substrate material does not evade, so there is no problem of substrate contamination. However, due to the thermal strain generated inside the substrate, the crack is prevented from extending deeper. sleepy difficult. Hereinafter, the influence of the thermal strain in the substrate which hinders the crack extension will be described.

圖13係表示以基板之軟化溫度以下的溫度對基板進行雷射照射而掃描光束點、繼而進行冷卻時基板內所產生之熱應變分布的示意剖面圖。圖中,雷射光束自紙面之內側向紙面之近前側連續地移動。Fig. 13 is a schematic cross-sectional view showing a thermal strain distribution generated in a substrate when laser beam is irradiated onto the substrate at a temperature equal to or lower than the softening temperature of the substrate, and the beam spot is scanned and then cooled. In the figure, the laser beam continuously moves from the inner side of the paper surface to the near side of the paper surface.

如圖13(a)所示,由雷射光束之光束點所加熱的部位100,於如圖中虛線箭頭所示之方向產生壓縮應力。繼而,如圖13(b)所示,若在藉由光束點之通過而受到加熱之部位100附近,藉由噴附冷媒而形成冷卻點110時,則會產生如圖中實線箭頭所示的拉伸應力。As shown in Fig. 13 (a), the portion 100 heated by the beam spot of the laser beam generates a compressive stress in the direction indicated by the dotted arrow in the figure. Then, as shown in FIG. 13(b), when the cooling point 110 is formed by spraying the refrigerant in the vicinity of the portion 100 heated by the passage of the beam spot, a solid arrow is formed as shown in the figure. Tensile stress.

從而,如圖13(c)所示,與此等之應力差對應地,形成在相對於拉伸應力成直角方向之基板的板厚方向上延伸之裂痕120。Therefore, as shown in FIG. 13(c), cracks 120 extending in the thickness direction of the substrate in a direction perpendicular to the tensile stress are formed in accordance with the stress difference.

然而,即便形成有冷卻點110,產生足以形成裂痕120之應力差的部位亦限於基板表面部分。若自冷卻點110朝基板之板厚方向擴散的熱、與自受到加熱之部位100朝基板之板厚方向擴散的熱之間,並無足以形成裂痕120之應力差、亦即溫差,則可認為,自受到加熱之部位100在基板內之板厚方向上擴散的剩餘之熱,會成為壓縮應力區域130而殘存於基板內。壓縮應力區域130被定義為基板內之相對熱應變。However, even if the cooling point 110 is formed, a portion which generates a stress difference sufficient to form the crack 120 is limited to the surface portion of the substrate. If the heat diffused from the cooling point 110 toward the thickness direction of the substrate and the heat diffused from the heated portion 100 toward the thickness of the substrate are not sufficient to form a stress difference of the crack 120, that is, a temperature difference, It is considered that the remaining heat diffused from the heated portion 100 in the thickness direction of the substrate causes the compressive stress region 130 to remain in the substrate. The compressive stress region 130 is defined as the relative thermal strain within the substrate.

如圖13(c)所示,壓縮應力區域130會妨礙裂痕120在基板之板厚方向上筆直地垂直延伸之作用。從而,於使 雷射光束在脆性材料基板之表面上以實用速度進行掃描之情形時,裂痕120於板厚方向上之延伸程度為板厚之2成~4成左右之深度。As shown in Fig. 13(c), the compressive stress region 130 prevents the crack 120 from extending vertically vertically in the thickness direction of the substrate. Thus When the laser beam is scanned at a practical speed on the surface of the brittle material substrate, the extent of the crack 120 in the thickness direction is about 2 to 40% of the thickness of the plate.

因此,於沿著裂痕形成預定線(圖13中為垂直於紙面之方向)連續地掃描光束點之情形時,基板係沿著線而不間斷地連續受到加熱,基板內部會連續地形成壓縮應力區域,因此,由於存在壓縮應力區域,故而,原理上,難以在裂痕形成預定線之正下方形成較深之裂痕。Therefore, when the beam spot is continuously scanned along the crack forming planned line (the direction perpendicular to the paper surface in Fig. 13), the substrate is continuously heated along the line without interruption, and compressive stress is continuously formed inside the substrate. The region, therefore, due to the existence of the region of compressive stress, in principle, it is difficult to form a deep crack directly below the predetermined line of crack formation.

相對於此,亦揭示有如下的裂痕形成方法:於雷射劃線加工中,沿著裂痕形成預定線(分割預定線)而交替地形成受到雷射光束之強烈照射的高溫部分、及所受之雷射光束之照射弱於該高溫部分的低溫部分,藉此,筆直地垂直延伸出較深之裂痕(參照專利文獻2)。On the other hand, there is also disclosed a crack forming method in which, in the laser scribing process, a predetermined line (divided line of division) is formed along the crack to alternately form a high temperature portion which is strongly irradiated by the laser beam, and The irradiation of the laser beam is weaker than the low temperature portion of the high temperature portion, whereby a deep crack is vertically extended straight (refer to Patent Document 2).

專利文獻2中發現,在沿著裂痕而形成預定線照射雷射光束而於脆性基板表面形成裂痕時,對裂痕形成預定線上之一部分脆性基板之表面加以遮光而形成不受雷射光束照射之區域,由此會產生如下現象。Patent Document 2 discloses that when a predetermined line is irradiated along a crack to irradiate a laser beam to form a crack on the surface of the brittle substrate, the surface of a portion of the brittle substrate on the predetermined line of crack formation is shielded from light to form an area not irradiated with the laser beam. , this will produce the following phenomenon.

亦即,發現了如下現象:若對雷射光束之遮光長度(裂痕形成預定線方向上的遮光部分之長度)較大,則裂痕在遮光部分停止延伸,但若逐漸縮小遮光長度,則最終遮光部分中亦連續地形成有裂痕,並且遮光部分所形成的裂痕之深度變深。That is, it has been found that if the shading length of the laser beam (the length of the shading portion in the direction in which the crack is formed in the predetermined line direction) is large, the crack stops at the shading portion, but if the shading length is gradually reduced, the final shading is performed. Cracks are continuously formed in the portion, and the depth of the crack formed by the light-shielding portion becomes deep.

上述現象中,相對於非遮光部分而言,將遮光部分定義為低溫部分,而將非遮光部分定義為高溫部分。藉由將 該低溫部分在裂痕形成預定線方向上的長度適當化,可抑制低溫部分產生熱應變,使高溫部分中連續地形成的垂直裂痕在低溫部分不會中斷,而且可形成較深之裂痕,並且可將該裂痕導至照射雷射光束之下一個高溫部分。In the above phenomenon, the light-shielding portion is defined as a low-temperature portion and the non-light-shielding portion is defined as a high-temperature portion with respect to the non-light-shielding portion. By The length of the low temperature portion in the direction in which the crack is formed is appropriate, and the thermal strain is suppressed in the low temperature portion, so that the vertical crack continuously formed in the high temperature portion is not interrupted at a low temperature portion, and a deep crack can be formed, and The crack is directed to illuminate a high temperature portion below the laser beam.

亦即,藉由將低溫部分在裂痕形成預定線方向上的長度適當化(使裂痕在低溫部分不會中斷並儘可能地延長低溫部分之長度),基板內部不存在壓縮應力區域、或即便存在壓縮應力區域亦可將該壓縮應力區域之產生狀況抑制為最小限度,因此可於低溫部分與高溫部分中於板厚方向上高精度地形成筆直且較深之連續裂痕。藉此,可使得用以分割脆性基板之斷裂裝置簡略化,有時亦可省略斷裂裝置。That is, by sizing the length of the low temperature portion in the direction of the predetermined line of crack formation (so that the crack is not interrupted at a low temperature portion and extending the length of the low temperature portion as much as possible), there is no compressive stress region inside the substrate, or even if present The compressive stress region can also suppress the occurrence of the compressive stress region to a minimum, so that a straight and deep continuous crack can be formed with high precision in the thickness direction in the low temperature portion and the high temperature portion. Thereby, the breaking device for dividing the brittle substrate can be simplified, and the breaking device can be omitted.

[專利文獻1]日本專利第3027768號公報[專利文獻2]WO2006/11608號公報[Patent Document 1] Japanese Patent No. 3027768 (Patent Document 2) WO2006/11608

如專利文獻2所記載,若沿著裂痕形成預定線(分割預定線),以適當的長度交替地形成受到雷射光束之強烈照射的高溫部分、與所受雷射光束之照射弱於該高溫部分的低溫部分,則可使裂痕垂直且筆直地延伸得較深,從而可容易地進行之後的斷裂處理。As described in Patent Document 2, when a predetermined line (divided line to be divided) is formed along a crack, a high-temperature portion that is strongly irradiated with a laser beam is alternately formed with an appropriate length, and the irradiation with the laser beam is weaker than the high temperature. Part of the low temperature portion allows the crack to be extended vertically and straightly deep so that the subsequent fracture treatment can be easily performed.

然而,為了實行該方法,必須預先在雷射劃線加工(裂痕形成)之時將高溫區域與低溫區域設定為適當之間隔,為此,需要工時來進行設定或調整。當如對同一規格、同 一材料之基板反覆進行加工之情形般無須頻繁地變更設定時,並無大礙,但於欲接連不斷地分割不同種類之基板等之情形時,此時必須變更設定,因而需要設定之工時。However, in order to carry out the method, it is necessary to set the high temperature region and the low temperature region to an appropriate interval in advance at the time of laser scribing (crack formation), and for this, it is necessary to set or adjust the man-hour. When the same specifications, the same When the substrate of one material is processed repeatedly, it is not necessary to change the setting frequently. However, when it is desired to continuously divide different types of substrates, the setting must be changed at this time, and thus the required working hours are required. .

因此,本發明之目的在於提供一種分割方法,其於照射雷射而於基板上形成槽或裂痕,並沿著所形成之槽或裂痕進行斷裂處理而分割基板之情形時,可穩定地分割基板,並且可減少分割所需要之彎曲力矩(斷裂壓)。Accordingly, it is an object of the present invention to provide a division method for stably dividing a substrate by forming a groove or a crack on a substrate by irradiating a laser and dividing the substrate by performing a fracture process along the formed groove or crack. And can reduce the bending moment (breaking pressure) required for the division.

又,本發明之目的在於提供一種如下之分割方法,其無須顧及為了不受基板內部所形成之壓縮應力區域之影響而設定的適當之加熱、冷卻條件,亦即,即便於產生壓縮應力區域之加熱、冷卻條件下進行加工,亦可僅藉由賦予充分小之彎曲力矩而進行分割。Further, it is an object of the present invention to provide a method of dividing which does not need to take into consideration appropriate heating and cooling conditions which are set so as not to be affected by a compressive stress region formed inside the substrate, that is, even in a region where a compressive stress is generated. The processing is performed under heating or cooling conditions, or may be performed only by imparting a sufficiently small bending moment.

為了解決上述課題而研發出之本發明之脆性材料基板之分割方法,包含如下步驟:使藉由雷射光束之照射所形成之光束點沿著設定於脆性材料基板之分割預定線相對移動,而以軟化點以下之溫度自基板表面側對上述基板進行加熱,繼而,使藉由自噴嘴噴射冷媒而形成之冷卻點以追隨上述光束點之方式相對移動而使基板冷卻,藉此形成裂痕之步驟;以及,藉由沿著所形成之裂痕施加彎曲力矩而進行分離之斷裂步驟;該脆性材料基板之分割方法中,於形成裂痕之步驟中,使加熱條件或/及冷卻條件沿著分割預定線週期性地變化,藉此,形成裂痕之最大深度在由基板內部之壓縮應力區域所限制之深度以內、且裂痕之深度沿著分割預定線方向以上述加熱條件或/及冷卻條件之週期變 化的週期裂痕;於斷裂步驟中,自基板背面側對上述週期裂痕施加彎曲力矩。The method for dividing a brittle material substrate of the present invention, which has been developed to solve the above problems, comprises the steps of: relatively moving a beam spot formed by irradiation of a laser beam along a predetermined dividing line set on a brittle material substrate; The substrate is heated from the surface of the substrate at a temperature lower than the softening point, and then the cooling point formed by ejecting the refrigerant from the nozzle moves relative to the beam spot to cool the substrate, thereby forming a crack. And a breaking step of separating by applying a bending moment along the formed crack; in the method of dividing the brittle material substrate, in the step of forming a crack, heating conditions and/or cooling conditions are along a dividing line Periodically changing, whereby the maximum depth at which the crack is formed is within a depth limited by the region of the compressive stress inside the substrate, and the depth of the crack is changed along the predetermined dividing line direction by the heating condition or/and the cooling condition a periodic crack; in the breaking step, a bending moment is applied to the periodic crack from the back side of the substrate.

根據本發明,於形成裂痕之步驟中,使對基板之加熱條件或冷卻條件中的至少任一個沿著分割預定線而週期性地變化,從而,對基板賦予週期性地變化之溫差。藉此,基板內,由加熱引起之壓縮應力與由冷卻引起之拉伸應力的內部應力差會週期性地變化。從而,藉由應力差而產生之裂痕亦週期性地變化,而形成「週期裂痕」。此時,由於上文已述之理由,基板內部產生壓縮應力區域(參照圖13),週期裂痕之最大深度受到壓縮應力區域的限制(最大深度為板厚之1成~4成左右)。而另一方面,若沿著形成有週期裂痕之分割預定線自基板之背面側施加彎曲力矩,則彎曲力矩會集中於週期裂痕上之任意之裂痕波峰部分(應力集中),即便裂痕形成得較淺,亦可僅藉由賦予較小之彎曲力矩而使其斷裂。According to the invention, in the step of forming the crack, at least one of the heating condition or the cooling condition of the substrate is periodically changed along the planned dividing line, thereby imparting a temperature difference that periodically changes to the substrate. Thereby, the internal stress difference between the compressive stress caused by heating and the tensile stress caused by cooling periodically changes in the substrate. Therefore, the crack generated by the stress difference also periodically changes to form a "period crack". At this time, for the reason described above, a compressive stress region is generated inside the substrate (see FIG. 13), and the maximum depth of the periodic crack is limited by the compressive stress region (the maximum depth is about 1 to 40% of the thickness). On the other hand, if a bending moment is applied from the back side of the substrate along the predetermined dividing line in which the periodic crack is formed, the bending moment concentrates on any crack peak portion (stress concentration) on the periodic crack, even if the crack is formed. Shallow, it can also be broken only by giving a small bending moment.

根據本發明,由於形成週期裂痕,且於裂痕形成後之斷裂處理中使應力集中於週期裂痕之任意之裂痕波峰部分,因此,可僅藉由賦予較小之彎曲力矩(斷裂壓),將應力集中點作為起點而容易地進行斷裂處理。According to the present invention, since the periodic crack is formed and the stress is concentrated in the crack peak portion of the periodic crack in the fracture treatment after the crack formation, the stress can be obtained only by imparting a small bending moment (breaking pressure). The concentration point is used as a starting point to easily perform the breaking process.

上述發明中,形成裂痕之步驟中之加熱條件或冷卻條件,亦可使(1)形成冷卻點之冷媒噴射量、(2)光束點之掃描速度、(3)光束點通過後至冷卻點到達為止之時間、(4)形成光束點之雷射光束之照射強度、(5)形成光束點之雷射光束之脈衝間隔、以及(6)光束點之形狀中的至 少任一個週期性地變化。In the above invention, the heating condition or the cooling condition in the step of forming the crack may also be (1) the amount of refrigerant injection forming the cooling point, (2) the scanning speed of the beam spot, and (3) the arrival of the beam spot to the cooling point. The time until (4) the intensity of the laser beam forming the beam spot, (5) the pulse interval of the laser beam forming the beam spot, and (6) the shape of the beam spot Less than one periodically changes.

該等參數均為可使基板之加熱程度、冷卻程度變化而使基板之板厚方向上之溫度梯度產生差之參數,因此,藉由使任一參數或幾個參數連動地週期性變化,可形成週期裂痕。These parameters are parameters which can change the degree of heating and the degree of cooling of the substrate to make the temperature gradient in the thickness direction of the substrate poor. Therefore, by changing any parameter or several parameters periodically, it is possible to change periodically. Form periodic cracks.

上述發明中,亦可使週期裂痕之波長為10mm~200mm,週期裂痕之最大深度與最小深度之深度差為基板板厚的1%~5%。In the above invention, the wavelength of the periodic crack may be 10 mm to 200 mm, and the difference between the maximum depth and the minimum depth of the periodic crack is 1% to 5% of the thickness of the substrate.

據此,無論週期裂痕之波長過短(小於10mm)還是過長(超過200mm),在斷裂時彎曲力矩(斷裂壓)均難以集中,因此,藉由設置成適當之波長(10mm~200mm),而能容易集中地施加彎曲力矩。又,藉由使週期裂痕之最大深度與最小深度之深度差為基板板厚的1%~5%,可顯著地表現出裂痕之波峰部分,因而可容易集中地施加彎曲力矩。尤其,當脆性材料基板為玻璃基板時,若形成該數值範圍之週期裂痕,則可容易地進行分割。Accordingly, regardless of whether the wavelength of the periodic crack is too short (less than 10 mm) or too long (more than 200 mm), the bending moment (breaking pressure) is hard to concentrate at the time of the fracture, and therefore, by setting the appropriate wavelength (10 mm to 200 mm), It is easy to apply the bending moment in a concentrated manner. Further, by making the depth difference between the maximum depth and the minimum depth of the periodic cracks 1% to 5% of the thickness of the substrate, the peak portion of the crack can be remarkably exhibited, and thus the bending moment can be easily applied intensively. In particular, when the brittle material substrate is a glass substrate, if a periodic crack in the numerical range is formed, the division can be easily performed.

又,為了解決本發明之課題而研發出之本發明之其他的脆性材料基板之分割方法,包含如下步驟:使藉由雷射光束之照射所形成之光束點沿著設定於脆性材料基板之分割預定線相對移動,而以熔融溫度以上之溫度對上述基板進行加熱而形成槽之步驟;以及,藉由沿著所形成之槽施加彎曲力矩進行分離之斷裂步驟;該脆性材料基板之分割方法中,於形成槽之步驟中,藉由使加熱條件沿著分割預定線週期性地變化,從而形成槽之深度沿著分割預定線方 向以上述加熱條件之週期變化之週期槽;於斷裂步驟中,自基板背面側對上述週期槽施加彎曲力矩。Further, in order to solve the problem of the present invention, another method for dividing a brittle material substrate according to the present invention includes the steps of: dividing a beam spot formed by irradiation of a laser beam along a substrate set on a brittle material substrate. a step of relatively moving the predetermined line to heat the substrate at a temperature above the melting temperature to form a groove; and a step of separating by applying a bending moment along the formed groove; the method of dividing the substrate of the brittle material In the step of forming the groove, the depth of the groove is formed along the line dividing the division by periodically changing the heating condition along the dividing line. A periodic groove that changes in a cycle of the above heating conditions; in the breaking step, a bending moment is applied to the periodic groove from the back side of the substrate.

根據本發明,於形成槽之步驟中,使對基板之加熱條件沿著分割預定線而週期性地變化,藉此形成深度週期性地變化之「週期槽」。繼而,若沿著形成有週期槽之分割預定線自基板之背面側施加彎曲力矩,則彎曲力矩會集中於週期槽之任意之深度波峰部分(應力集中),即便槽整體形成得較淺,亦可僅藉由賦予較小之彎曲力矩而使其斷裂。亦即,由於槽整體形成得較淺,故由基板表面之蒸散所引起之污染較少,而且可藉由較小之彎曲力矩確實地使其斷裂。According to the invention, in the step of forming the groove, the heating condition of the substrate is periodically changed along the dividing line, thereby forming a "period groove" in which the depth periodically changes. Then, if a bending moment is applied from the back side of the substrate along the predetermined dividing line in which the periodic groove is formed, the bending moment is concentrated on any depth peak portion (stress concentration) of the periodic groove, even if the groove is formed shallow overall. It can be broken only by imparting a small bending moment. That is, since the entire groove is formed shallow, the contamination caused by the evapotranspiration on the surface of the substrate is small, and it can be surely broken by a small bending moment.

上述本發明中,於形成槽之步驟中,當形成有週期槽並且於週期槽之底部形成有週期裂痕時,亦可對週期槽以及週期裂痕施加彎曲力矩。In the above invention, in the step of forming the groove, when the periodic groove is formed and the periodic crack is formed at the bottom of the periodic groove, the bending moment can be applied to the periodic groove and the periodic crack.

據此,當週期槽之底部形成有週期裂痕時,係對週期裂痕之波峰集中地施加彎曲力矩,因而,此時亦同樣地賦予較小之彎曲力矩就可使其斷裂。由於槽整體形成得較淺,故基板表面之污染亦較少。According to this, when a periodic crack is formed at the bottom of the periodic groove, the bending moment is concentratedly applied to the peak of the periodic crack, and therefore, a small bending moment is similarly applied to break the same. Since the entire groove is formed shallow, the surface of the substrate is less polluted.

上述兩個發明中,形成裂痕時之加熱條件,亦可使(1)雷射光束之掃描速度、(2)雷射光束之照射強度、(3)雷射光束之焦點之深度、以及(4)雷射光束之脈衝間隔中的至少任一個週期性地變化。In the above two inventions, the heating conditions at which the crack is formed may also be (1) the scanning speed of the laser beam, (2) the irradiation intensity of the laser beam, (3) the depth of the focus of the laser beam, and (4) At least any one of the pulse intervals of the laser beam periodically changes.

該等參數均對基板之熔融量(或熔融部分之深度)有影響,因此,藉由使任一參數或幾個參數連動地週期性變 化,可形成週期槽。These parameters all have an influence on the amount of melting of the substrate (or the depth of the molten portion), and therefore, by cyclically changing any parameter or several parameters The cycle can be formed.

上述發明中,亦可使週期槽深度之變化波長為1mm~10mm,週期槽之最大深度與最小深度之深度差為基板之板厚之1%~5%。In the above invention, the wavelength of the periodic groove may be changed to a wavelength of 1 mm to 10 mm, and the difference between the maximum depth of the periodic groove and the minimum depth may be 1% to 5% of the thickness of the substrate.

據此,藉由將週期槽深度之變化波長設定為適當之波長(1mm~10mm),容易集中地施加彎曲力矩。又,藉由使週期槽之最大深度與最小深度之深度差為基板板厚的1%~5%,槽之波峰部分顯著地表現出來,容易集中地施加彎曲力矩。尤其,當脆性材料基板為藍寶石基板時,若形成該數值範圍之週期裂痕則可容易地分割。Accordingly, by setting the wavelength of the change in the period of the periodic groove to an appropriate wavelength (1 mm to 10 mm), it is easy to apply the bending moment in a concentrated manner. Further, by making the depth difference between the maximum depth and the minimum depth of the periodic groove 1% to 5% of the thickness of the substrate, the peak portion of the groove is remarkably expressed, and the bending moment is easily applied collectively. In particular, when the brittle material substrate is a sapphire substrate, periodic cracks in the numerical range can be easily divided.

參照圖式就本發明之實施形態加以說明。此處,以分割一片玻璃基板之情形為例進行說明,但即便是玻璃以外之脆性材料基板、或平板顯示器用基板之類的貼合有多片基板之貼合基板,亦可應用本發明。Embodiments of the present invention will be described with reference to the drawings. Here, the case where a single glass substrate is divided is described as an example. However, the present invention can be applied to a bonded substrate in which a plurality of substrates are bonded to a brittle material substrate other than glass or a flat panel display substrate.

(第一實施形態)(First embodiment)

作為本發明之第一實施形態,就利用雷射劃線加工之分割方法加以說明。該分割方法中,使用沿著分割預定線形成週期裂痕之雷射劃線裝置、以及沿著所形成之週期裂痕施加彎曲力矩(斷裂壓)之斷裂裝置。As a first embodiment of the present invention, a method of dividing by laser scribing processing will be described. In the dividing method, a laser scribing device that forms a periodic crack along a predetermined dividing line and a breaking device that applies a bending moment (breaking pressure) along the formed periodic crack are used.

首先,就雷射劃線裝置加以說明。圖1係作為本發明之一實施形態的脆性基板之分割方法中所使用之雷射劃線裝置之構成圖,圖2係其控制系統之方塊圖。First, the laser scribing device will be described. Fig. 1 is a configuration diagram of a laser scribing apparatus used in a method of dividing a brittle substrate according to an embodiment of the present invention, and Fig. 2 is a block diagram of a control system.

根據圖1,就雷射劃線裝置之整體構成加以說明。雷射劃線裝置LS中設置有滑台2,該滑台2沿著平行配置在水平架台1上之一對導軌3、4,在紙面的前後方向(以下稱為Y方向)上往返移動。其係以如下方式而構成:於兩導軌3、4之間,沿著前後方向而配置有導螺桿5,固定於滑台2上之支架6螺合於該導螺桿5,利用馬達(圖中未示)來使導螺桿5旋轉,藉此,滑台2沿著導軌3、4在Y方向上移動,根據馬達之轉向而往返移動。The overall configuration of the laser scribing apparatus will be described with reference to Fig. 1. The laser scribing device LS is provided with a slide table 2 that reciprocates in a front-rear direction (hereinafter referred to as a Y direction) of the paper surface along a pair of guide rails 3 and 4 arranged in parallel on the horizontal gantry 1. It is configured such that a lead screw 5 is disposed between the two guide rails 3 and 4 along the front-rear direction, and the bracket 6 fixed to the slide table 2 is screwed to the lead screw 5, and the motor is used. Not shown), the lead screw 5 is rotated, whereby the slide table 2 moves in the Y direction along the guide rails 3, 4, and reciprocates according to the steering of the motor.

於滑台2上,配置有可沿導軌8在圖1之左右方向(以下稱為X方向)上往返移動的水平之台座7。在固定於台座7上之支架10上,貫穿螺合有藉由馬達9的驅動而旋轉之導螺桿10a,因導螺桿10a旋轉,台座7沿著導軌8在X方向上移動,根據馬達之轉向而往返移動。On the slide table 2, a horizontal pedestal 7 that can reciprocate along the guide rail 8 in the left-right direction of FIG. 1 (hereinafter referred to as the X direction) is disposed. On the bracket 10 fixed to the pedestal 7, a lead screw 10a that is rotated by the driving of the motor 9 is screwed through, and the pedestal 7 moves in the X direction along the guide rail 8 due to the rotation of the lead screw 10a, according to the steering of the motor And move back and forth.

於台座7上,設置有藉由旋轉機構11而旋轉之旋轉台12,於該旋轉台12之載置面上,以水平狀態載置有作為切斷對象之脆性材料基板即玻璃基板G,並視需要使其固定。旋轉機構11係以如下方式而形成:使旋轉台12以垂直於載置面之軸作為旋轉軸而旋轉,且可相對於基準位置旋轉至任意之旋轉角度。玻璃基板G係藉由例如吸盤而固定於旋轉台12上。The turret 7 is provided with a rotary table 12 that is rotated by the rotation mechanism 11, and a glass substrate G which is a brittle material substrate to be cut is placed on the surface of the rotary table 12 in a horizontal state, and Fix it as needed. The rotation mechanism 11 is formed such that the rotary table 12 is rotated as an axis of rotation perpendicular to the mounting surface, and is rotatable to an arbitrary rotation angle with respect to the reference position. The glass substrate G is fixed to the turntable 12 by, for example, a suction cup.

於旋轉台12之上方,於安裝框架15固定有雷射13以及光學系統調整機構14,上述雷射13以預定之功率(照射強度)以及脈衝間隔振盪射出剖面為圓形之雷射光束,上述光學系統調整機構14使上述雷射光束之剖面形狀產生光 學變形而於玻璃基板G上形成橢圓形狀之光束點HS(圖2)。Above the rotating table 12, a laser 13 and an optical system adjusting mechanism 14 are fixed to the mounting frame 15, and the laser 13 oscillates a laser beam having a circular cross section at a predetermined power (irradiation intensity) and a pulse interval. The optical system adjusting mechanism 14 generates light in a sectional shape of the above-mentioned laser beam The beam is deformed to form an elliptical beam spot HS on the glass substrate G (Fig. 2).

為了不使基板熔融而在小於基板熔融溫度之溫度下進行加熱,該雷射13係使用波長較長之雷射,例如CO2 雷射。圖3係表示光學系統調整機構14之內部構成之圖。沿著雷射光束之光路L,於上側安裝有平凸透鏡14a,於下側安裝有柱狀透鏡14b,分別以可藉由馬達(圖中未示)在上下方向(Z方向)上調整位置之方式由透鏡位置調整機構14c、14d所支撐。藉由調整平凸透鏡14a之位置,主要對形成橢圓形狀之光束點時的短軸長度進行調整(寬度方向之調整),藉由調整柱狀透鏡14b之位置而調整長軸的長度。In order to heat the substrate at a temperature less than the melting temperature of the substrate without melting the substrate, the laser 13 uses a laser having a long wavelength, such as a CO 2 laser. FIG. 3 is a view showing the internal configuration of the optical system adjusting mechanism 14. A plano-convex lens 14a is attached to the upper side of the optical path L of the laser beam, and a lenticular lens 14b is attached to the lower side, and the position can be adjusted in the up-down direction (Z direction) by a motor (not shown). The mode is supported by the lens position adjusting mechanisms 14c, 14d. By adjusting the position of the plano-convex lens 14a, the length of the short axis when forming the beam spot of the elliptical shape is mainly adjusted (adjustment in the width direction), and the length of the long axis is adjusted by adjusting the position of the lenticular lens 14b.

於安裝框架15、光學系統調整機構14附近安裝有冷卻噴嘴16。自該冷卻噴嘴16對玻璃基板G噴射冷卻水、氦氣、二氧化碳等冷媒,而於玻璃基板G之表面形成冷卻點CS(圖2)。冷媒係自冷媒供給源(圖中未示)經由流量調整閥16a而被送至噴嘴16。藉由該流量調整閥16a之開閉來控制開始噴射及停止噴射,並且藉由調整開度來控制冷媒之噴射量。A cooling nozzle 16 is attached to the mounting frame 15 and the optical system adjusting mechanism 14. The cooling nozzle 16 sprays a cooling medium such as cooling water, helium or carbon dioxide onto the glass substrate G to form a cooling point CS on the surface of the glass substrate G (FIG. 2). The refrigerant is sent from the refrigerant supply source (not shown) to the nozzle 16 via the flow rate adjustment valve 16a. The start of the injection and the stop of the injection are controlled by the opening and closing of the flow rate adjusting valve 16a, and the amount of injection of the refrigerant is controlled by adjusting the opening degree.

於噴嘴16設置有噴嘴位置調整機構16b,其藉由馬達(圖中未示)驅動而調整噴嘴16之X方向上的位置。利用噴嘴位置調整機構16b來調整冷卻點CS與光束點HS之點間距離,藉此調整自加熱起至冷卻為止之時間。The nozzle 16 is provided with a nozzle position adjusting mechanism 16b that adjusts the position of the nozzle 16 in the X direction by being driven by a motor (not shown). The nozzle position adjusting mechanism 16b adjusts the distance between the cooling point CS and the beam spot HS, thereby adjusting the time from the heating to the cooling.

又,於安裝框架15,經由上下調整機構17而安裝有刀輪18。該刀輪18係以燒結金剛石或超硬合金為材料、且外周面上具備以頂點為刀尖之V字形稜線部者,且該刀輪18 對玻璃基板G之壓接力可藉由上下調整機構17來調整。欲在玻璃基板G之端緣(或端緣以外亦可)形成初始龜裂TR時,使刀輪18暫時下降。Further, the cutter wheel 18 is attached to the mounting frame 15 via the vertical adjustment mechanism 17. The cutter wheel 18 is made of sintered diamond or super hard alloy, and has a V-shaped ridge portion having a vertex as a tip on the outer peripheral surface, and the cutter wheel 18 is provided. The pressure contact force to the glass substrate G can be adjusted by the up-and-down adjustment mechanism 17. When the initial crack TR is to be formed at the edge (or other than the edge) of the glass substrate G, the cutter wheel 18 is temporarily lowered.

進而,於安裝框架15上安裝有攝影機20,該攝影機20拍出壓印於玻璃基板G上之對準標記。玻璃基板G上之對準標記的位置係預先儲存於控制系統中,可藉由對準標記來進行玻璃基板之定位(對玻璃基板之特定位置進行雷射照射及冷媒噴射)。Further, a camera 20 is mounted on the mounting frame 15, and the camera 20 captures an alignment mark imprinted on the glass substrate G. The position of the alignment mark on the glass substrate G is previously stored in the control system, and the positioning of the glass substrate can be performed by the alignment mark (laser irradiation and refrigerant ejection at a specific position of the glass substrate).

繼而,就控制系統加以說明。如圖2所示,雷射劃線裝置LS之控制系統係由包含CPU且對裝置整體進行控制之控制部50、包含鍵盤及滑鼠且進行各種輸入操作之輸入部51、包含液晶面板且顯示控制資訊或參數之輸入畫面的顯示部52、儲存有控制程式或用於控制之參數的儲存部53、以及各驅動部(於控制部50之控制下受到驅動之台驅動部61、雷射驅動部62、光學系統驅動部63、冷媒驅動部64、噴嘴驅動部65、攝影機驅動部66、切割器驅動部67)所構成。Then, the control system is explained. As shown in FIG. 2, the control system of the laser scribing device LS is a control unit 50 including a CPU and controlling the entire device, an input unit 51 including a keyboard and a mouse, and performing various input operations, and including a liquid crystal panel and displaying a display unit 52 that controls an input screen of information or parameters, a storage unit 53 that stores a control program or parameters for control, and a drive unit (a table drive unit 61 that is driven under the control of the control unit 50, and a laser drive) The unit 62, the optical system drive unit 63, the refrigerant drive unit 64, the nozzle drive unit 65, the camera drive unit 66, and the cutter drive unit 67) are configured.

儲存部53中,預先儲存有冷媒噴射量、光束點及冷卻點相對於基板之相對掃描速度、光束點與冷卻點之點間距離、雷射照射強度(雷射輸出)、雷射脈衝間隔、以及光束點形狀,以作為用作加熱條件或冷卻條件之控制參數。該等控制參數可藉由輸入部51以及顯示部52上所顯示之輸入畫面而適當地設定。The storage unit 53 stores in advance the amount of refrigerant injection, the relative scanning speed of the beam spot and the cooling point with respect to the substrate, the distance between the beam spot and the cooling point, the laser irradiation intensity (laser output), the laser pulse interval, And the shape of the beam spot as a control parameter for use as a heating condition or a cooling condition. These control parameters can be appropriately set by the input screen displayed on the input unit 51 and the display unit 52.

接著,控制部50根據儲存部53中所儲存之上述控制 參數,而生成用以形成週期裂痕之控制訊號。亦即,藉由產生使作為加熱條件或冷卻條件之控制參數中的至少一個週期性地變化之控制訊號而進行控制,以使在沿著分割預定線掃描雷射光束時,對基板G進行週期性變化之加熱或冷卻。具體之控制將於後文中描述。所生成之控制訊號被分別傳送至所對應之驅動部而實行控制動作。Next, the control unit 50 is based on the above control stored in the storage unit 53. Parameters, which generate control signals to form periodic cracks. That is, control is performed by generating a control signal that periodically changes at least one of control parameters as heating conditions or cooling conditions, so that the substrate G is periodically cycled while scanning the laser beam along the dividing line. Heating or cooling of sexual changes. The specific control will be described later. The generated control signals are transmitted to the corresponding drive units to perform control operations.

以下,就各驅動部加以說明。台驅動部61係驅動用以進行滑台2及台座7、旋轉台12之定位的馬達(馬達9等)。形成週期裂痕時,根據儲存部53中所設定之掃描速度,對台座7之X方向上進行掃描。Hereinafter, each drive unit will be described. The stage drive unit 61 drives a motor (motor 9 or the like) for positioning the slide table 2, the pedestal 7, and the rotary table 12. When a periodic crack is formed, the pedestal 7 is scanned in the X direction in accordance with the scanning speed set in the storage unit 53.

雷射驅動部62自雷射13照射雷射光束。形成週期裂痕時,根據儲存部53中所設定之雷射照射強度、雷射脈衝間隔而照射雷射光束。The laser driving unit 62 irradiates the laser beam from the laser beam 13. When a periodic crack is formed, the laser beam is irradiated according to the laser irradiation intensity and the laser pulse interval set in the storage portion 53.

光學系統驅動部63對光學系統調整機構14之透鏡位置調整機構14c、14d進行驅動。形成週期裂痕時,照射根據儲存部53中所設定之光束點之形狀(長軸長度、短軸長度)而變形之光束點。The optical system drive unit 63 drives the lens position adjustment mechanisms 14c and 14d of the optical system adjustment mechanism 14. When a periodic crack is formed, a beam spot that is deformed according to the shape (long axis length, short axis length) of the beam spot set in the storage portion 53 is irradiated.

冷媒驅動部64對控制冷媒噴射量之流量調整閥16a進行驅動。形成週期裂痕時,根據儲存部53中所設定之冷媒噴射量而噴射冷媒。The refrigerant drive unit 64 drives the flow rate adjustment valve 16a that controls the amount of refrigerant injection. When a periodic crack is formed, the refrigerant is injected in accordance with the amount of refrigerant injection set in the storage unit 53.

噴嘴驅動部65對用以調整冷卻噴嘴16之位置的噴嘴位置調整機構16b進行驅動。形成週期裂痕時,根據儲存部53中所設定之點間距離而調整噴嘴16之位置。再者,根據點間距離以及掃描速度來決定光束點HS通過之後至冷 卻點CS通過為止之時間(稱為加熱/冷卻間時間)。加熱/冷卻間時間越長則裂痕之深度越深。The nozzle drive unit 65 drives the nozzle position adjustment mechanism 16b for adjusting the position of the cooling nozzle 16. When the periodic crack is formed, the position of the nozzle 16 is adjusted in accordance with the distance between the points set in the storage portion 53. Furthermore, depending on the distance between the points and the scanning speed, the beam point HS is determined to pass through to the cold. However, the time until the CS passes (called the heating/cooling time). The longer the heating/cooling time, the deeper the crack.

除上述各驅動部以外,攝影機驅動部66對攝影機20進行驅動而拍出對準標記。根據所拍出之對準標記而進行基板G之定位。In addition to the above-described respective drive units, the camera drive unit 66 drives the camera 20 to take an alignment mark. The positioning of the substrate G is performed in accordance with the alignment marks taken.

又,切割器驅動部67對刀輪18進行驅動。藉此,於基板G形成初始龜裂。Further, the cutter drive unit 67 drives the cutter wheel 18. Thereby, an initial crack is formed on the substrate G.

繼而,就形成週期裂痕時之控制訊號加以具體說明。為了形成週期裂痕,而生成使儲存部53中所儲存之控制參數中的至少一個週期性變化之控制訊號。以下,對控制參數逐一進行說明。Then, the control signal when the periodic crack is formed is specifically described. In order to form a periodic crack, a control signal for periodically changing at least one of the control parameters stored in the storage unit 53 is generated. Hereinafter, the control parameters will be described one by one.

(1)冷媒噴射量(1) Refrigerant injection amount

就使冷媒噴射量週期變化、而將其他控制參數維持為固定之控制訊號而言,冷媒噴射量較少之部分中裂痕之深度變淺,而冷媒噴射量較多之部分中裂痕之深度變深。亦即,大量噴射冷媒而強烈地冷卻之部分中,基板厚度方向上之溫度梯度(溫差)變大,該部分之應力差變大而裂痕延伸得較深。In the case where the refrigerant injection amount is periodically changed and the other control parameters are maintained at a fixed control signal, the depth of the crack in the portion where the amount of refrigerant injection is small becomes shallow, and the depth of the crack in the portion where the amount of refrigerant injection is large becomes deep. . That is, in the portion where the refrigerant is strongly cooled and strongly cooled, the temperature gradient (temperature difference) in the thickness direction of the substrate becomes large, and the stress difference in the portion becomes large and the crack extends deep.

(2)掃描速度(2) Scanning speed

就使光束點(及冷卻點)在基板上之掃描速度週期變化、而將其他控制參數維持為固定之控制訊號而言,掃描速度較快之部分中裂痕之深度變淺,而掃描速度較慢之部分中裂痕之深度變深。亦即,掃描速度較慢之部分中供熱量增加而受到強烈加熱,該部分之應力差變大而裂痕延伸 得較深。In the case where the scanning speed of the beam spot (and the cooling point) is periodically changed on the substrate while the other control parameters are maintained as a fixed control signal, the depth of the crack in the faster scanning portion becomes shallower, and the scanning speed is slower. The depth of the crack in the part becomes deeper. That is, the portion of the slower scanning speed is heated and the heat is increased, and the stress difference in the portion is increased and the crack is extended. Got deeper.

(3)光束點與冷卻點間之距離(點間距離)(3) Distance between beam point and cooling point (distance between points)

就使點間距離週期變化、而將其他控制參數維持為固定(光束點之掃描速度亦固定)之控制訊號而言,縮短點間距離而縮短加熱/冷卻間時間(光束點HS通過之後至冷卻點CS通過為止之時間)之部分中裂痕之深度變淺,延長點間距離而延長加熱冷卻間時間之部分中裂痕之深度變深。亦即,延長點間距離之部分而形成裂痕時之壓縮應力區域(亦即裂痕延伸受到限制之區域)變深,因而裂痕延伸得較深。In the case of a control signal that changes the period between points and maintains other control parameters to be fixed (the scanning speed of the beam spot is also fixed), the distance between the points is shortened and the heating/cooling time is shortened (after the beam point HS passes to the cooling) The depth of the crack in the portion where the point CS passes is shallow, and the distance between the points is extended to extend the depth of the crack in the portion between the heating and cooling periods. That is, the region of the compressive stress (i.e., the region where the crack extension is restricted) when the portion is extended by the distance between the points is deepened, so that the crack extends deeper.

(4)雷射照射強度(功率)(4) Laser irradiation intensity (power)

就使雷射照射強度(功率)週期變化、而將其他控制參數維持為固定之控制訊號而言,雷射光束之照射強度較弱之部分中裂痕之深度變淺,而雷射光束之照射強度較強之部分中裂痕之深度變深。亦即,照射強度較強之部分中供熱量增加而受到強烈加熱,該部分之應力差變大而裂痕延伸得較深。In the case of a control signal that causes the laser irradiation intensity (power) to change periodically while maintaining other control parameters to be fixed, the depth of the crack in the weaker portion of the laser beam is shallower, and the intensity of the laser beam is increased. The depth of the crack in the stronger part becomes deeper. That is, in the portion where the irradiation intensity is strong, the amount of heat supplied is increased and intensely heated, and the stress difference in the portion becomes large and the crack extends deep.

(5)雷射脈衝間隔(5) Laser pulse interval

於使雷射之脈衝間隔週期變化、而將其他控制參數維持為固定之情形時,雷射之脈衝間隔較長之部分中裂痕之深度變淺,而雷射之脈衝間隔較短之部分中裂痕之深度變深。亦即,脈衝間隔較短之部分中供熱量增加而受到強烈加熱,該部分之應力差變大而裂痕延伸得較深。When the period of the pulse interval of the laser is changed and the other control parameters are maintained to be fixed, the depth of the crack in the portion where the laser pulse is longer is shallow, and the crack in the portion where the pulse interval of the laser is shorter is small. The depth becomes deeper. That is, the heat supply in the portion where the pulse interval is shorter is strongly heated, and the stress difference in the portion becomes large and the crack extends deep.

(6)光束點形狀(6) Beam spot shape

雷射劃線加工中,使橢圓形狀等之光束點之長軸方向與分割預定線(劃線預定線)對準而掃描光束點。於使此時之長軸長度週期變化、而使其他控制參數固定之情形時,存在如下傾向:長軸長度較短之部分中每單位面積之熱量變多而裂痕之深度變深,長軸長度較長之部分中每單位面積之熱量變少而裂痕之深度變淺。In the laser scribing process, the long-axis direction of the beam spot such as an elliptical shape is aligned with the planned dividing line (predetermined line) to scan the beam spot. When the length of the long axis at this time is changed periodically and other control parameters are fixed, there is a tendency that heat per unit area becomes large in the portion where the length of the long axis is short, and the depth of the crack becomes deep, and the length of the long axis In the longer part, the amount of heat per unit area becomes smaller and the depth of the crack becomes shallower.

又,關於上述(1)~(6)之控制參數,亦可使複數個控制參數同時產生週期變化。例如,亦可使冷媒噴射量與雷射照射強度同時變化而增大基板內所產生之溫差。Further, regarding the control parameters of the above (1) to (6), a plurality of control parameters may be simultaneously changed in a periodic manner. For example, the amount of refrigerant injection and the intensity of laser irradiation can be simultaneously changed to increase the temperature difference generated in the substrate.

繼而,就劃線動作加以說明。與習知之劃線動作相比,利用上述雷射劃線裝置LS時的不同點為,藉由一部分控制參數週期性變化之控制訊號而使驅動部動作,其餘相同。Then, the scribing action will be described. Compared with the conventional scribing operation, the difference in the use of the above-described laser scribing device LS is that the driving unit is operated by a part of the control signals whose control parameters are periodically changed, and the rest are the same.

亦即,藉由刀輪18於分割預定線之端部形成初始龜裂TR,繼而使光束點HS以及冷卻點CS沿著分割預定線進行掃描。此時,藉由一部分控制參數週期性變化之控制訊號而對各驅動部進行控制。藉此,於基板G形成週期裂痕。That is, the initial crack TR is formed by the cutter wheel 18 at the end of the dividing line, and then the beam spot HS and the cooling point CS are scanned along the dividing line. At this time, each of the drive units is controlled by a part of the control signals whose control parameters are periodically changed. Thereby, a periodic crack is formed on the substrate G.

圖4係表示一邊使控制參數週期性變化一邊進行雷射劃線加工時形成於基板G之週期裂痕的示意圖,圖4(a)係基板G之立體圖、圖4(b)係A-A'剖面圖,圖4(c)係B-B'剖面圖,圖4(d)係C-C'剖面圖。4 is a schematic view showing a periodic crack formed on the substrate G when the laser beam scribing is performed while periodically changing the control parameters, and FIG. 4(a) is a perspective view of the substrate G, and FIG. 4(b) is A-A'. In the cross-sectional view, Fig. 4(c) is a B-B' cross-sectional view, and Fig. 4(d) is a C-C' cross-sectional view.

自初始龜裂TR起以直線狀掃描光束點HS以及冷卻點CS,藉此如圖4(a)所示般形成裂痕Cr,且於基板表面形成直線狀之劃線SL。The beam spot HS and the cooling point CS are scanned linearly from the initial crack TR, whereby the crack Cr is formed as shown in FIG. 4(a), and a linear scribe line SL is formed on the surface of the substrate.

此時,如圖4(a)、(b)所示,在板厚方向上延伸之 裂痕Cr的頂端部分,形成週期與控制參數變動之週期相同的波形W,且形成有週期裂痕。At this time, as shown in FIGS. 4(a) and 4(b), it extends in the thickness direction. The tip portion of the crack Cr forms a waveform W having the same period as the period in which the control parameter changes, and a periodic crack is formed.

所形成之週期裂痕之波長對應於控制參數之變動週期(亦即波長)而變化。若使週期裂痕之波長為適當之波長,則在使用後述斷裂裝置對基板G施加彎曲力矩時,彎曲力矩(斷裂壓)會集中於週期裂痕之波峰(山部分),故即便所施加之彎曲力矩較小亦可容易地分割。The wavelength of the periodic crack formed is varied corresponding to the period of variation (i.e., wavelength) of the control parameter. When the wavelength of the periodic crack is set to an appropriate wavelength, when a bending moment is applied to the substrate G by using a breaking device described later, the bending moment (breaking pressure) is concentrated on the peak of the periodic crack (mountain portion), so even the applied bending moment Smaller can also be easily segmented.

就玻璃之類的基板而言,根據經驗可判斷,彎曲力矩(斷裂壓)容易集中於週期裂痕之波峰(山部分)之週期裂痕的波長為10mm~200mm。因此,考慮與掃描速度之關係而調整控制參數之週期,使其在該波長範圍內。In the case of a substrate such as glass, it can be judged from experience that the bending moment (breaking pressure) tends to concentrate on the peak of the periodic crack (mountain portion) and the wavelength of the crack is 10 mm to 200 mm. Therefore, the period of the control parameter is adjusted in consideration of the relationship with the scanning speed so as to be within the wavelength range.

又,若週期裂痕之最大深度與最小深度之深度差為基板板厚的1%~5%,則週期裂痕之山以及谷的波峰部分會顯著地表現出來,因而斷裂裝置容易集中地施加彎曲力矩。Moreover, if the depth difference between the maximum depth and the minimum depth of the periodic crack is 1% to 5% of the thickness of the substrate, the mountain of the periodic crack and the peak portion of the valley are remarkably expressed, so that the breaking device is easy to apply the bending moment intensively. .

雖然週期裂痕之最大深度與最小深度之深度差亦取決於基板G之板厚,但例如,若基板之板厚為0.5mm~1mm左右,則該深度差為5 μm~50 μm之範圍即可。Although the depth difference between the maximum depth and the minimum depth of the periodic crack depends on the thickness of the substrate G, for example, if the thickness of the substrate is about 0.5 mm to 1 mm, the depth difference may be in the range of 5 μm to 50 μm. .

此外,如圖4(c)、(d)所示,所形成之週期裂痕之頂端(最深部)由於受到裂痕形成時基板內所產生之壓縮應力區域之影響而停止延伸,其結果,週期裂痕之深度通常為板厚之10%~40%,而並不進一步延伸。Further, as shown in Figs. 4(c) and 4(d), the tip (the deepest portion) of the formed periodic crack is stopped due to the influence of the compressive stress region generated in the substrate when the crack is formed, and as a result, the periodic crack The depth is usually 10% to 40% of the thickness of the board, and does not extend further.

其次,就斷裂裝置加以說明。圖5(a)係作為本發明之一實施形態的脆性基板之分割方法中所使用之斷裂裝置的概略構成圖。對與圖1相同之構成標記相同符號,藉此 省略部分說明。Next, the breaking device will be described. Fig. 5 (a) is a schematic configuration diagram of a breaking device used in a method of dividing a brittle substrate according to an embodiment of the present invention. The same components as those in Fig. 1 are denoted by the same reference numerals, whereby Some explanations are omitted.

此處,為了方便說明而使用空間座標(x,y,z),將與斷裂裝置10之設置地面平行的台基準面設為(x,y,z0 ),將與設置地面垂直的方向設為z軸,將基板G之分割方向(斷裂方向)設為y軸。斷裂裝置BM具有:可在-x軸方向上滑動之滑台23a,以及能以與y軸平行之旋轉軸為中心而傾斜且可在+x軸方向上滑動之傾斜台23b。Here, for convenience of explanation, the space coordinates (x, y, z) are used, and the reference plane parallel to the installation ground of the breaking device 10 is set to (x, y, z 0 ), and the direction perpendicular to the ground is set. For the z-axis, the dividing direction (breaking direction) of the substrate G is set to the y-axis. The breaking device BM has a slide table 23a slidable in the -x-axis direction, and a tilting table 23b which is tiltable about the rotation axis parallel to the y-axis and slidable in the +x-axis direction.

圖5b係表示斷裂裝置BM之左側單元BM(A)與右側單元BM(B)處於分離狀態之立體圖。當斷裂裝置BM整體安裝於圖5a之架台1上時,左側單元BM(A)係指設置於圖5a所示之基板G上之劃線SL的左側(-x軸方向)之機構部,右側單元BM(B)係指設置於基板G之劃線SL的右側(+x軸方向)之機構部。Fig. 5b is a perspective view showing the left unit BM (A) and the right unit BM (B) of the breaking device BM in a separated state. When the breaking device BM is integrally mounted on the gantry 1 of FIG. 5a, the left side unit BM (A) refers to the mechanism portion disposed on the left side (-x-axis direction) of the scribe line SL on the substrate G shown in FIG. 5a, and the right side. The unit BM (B) is a mechanism portion provided on the right side (+x-axis direction) of the scribe line SL of the substrate G.

又,為了載置並保持欲切割之基板G,而將第1製品台24a固定於滑台23a上,將第2製品台24b固定於傾斜台23b。又,於第1製品台24a之上部安裝有第1製品夾固單元25a,於第2製品台24b之上部安裝有第2製品夾固單元25b。使基板G之劃線SL與y軸平行,以劃線SL為中心將基板之-x軸側(左側)之區域稱為基板左部GL,而將+x軸側(右側)之區域稱為基板右部GR。第1製品夾固單元25a強固地推壓基板左部GL之右端部而固定基板,第2製品夾固單元25b強固地推壓基板右部GR之左端部而固定基板。Further, in order to mount and hold the substrate G to be cut, the first product stage 24a is fixed to the slide table 23a, and the second product stage 24b is fixed to the inclined table 23b. Further, the first product holding unit 25a is attached to the upper portion of the first product table 24a, and the second product holding unit 25b is attached to the upper portion of the second product table 24b. The scribe line SL of the substrate G is parallel to the y-axis, and the region on the -x-axis side (left side) of the substrate is referred to as the left portion GL of the substrate, and the region on the +x-axis side (right side) is referred to as a substrate. Right GR. The first product pinching unit 25a strongly presses the right end portion of the left side portion GL of the substrate to fix the substrate, and the second product pinching unit 25b strongly presses the left end portion of the right portion GR of the substrate to fix the substrate.

左側單元BM(A)中設置有滑動機構26。滑動機構26 用以將滑台23a往-x軸方向彈壓,設置有賦予彈壓力之彈性構件,例如氣缸、彈簧等。此外,滑動機構26中設置有限制滑動範圍之止動器、以及限制滑動速度之阻尼器等(圖中未示)。A slide mechanism 26 is provided in the left unit BM (A). Sliding mechanism 26 The slider 23a is biased in the -x-axis direction, and an elastic member that imparts an elastic force, such as a cylinder, a spring, or the like, is provided. Further, the slide mechanism 26 is provided with a stopper for restricting the sliding range, a damper for limiting the sliding speed, and the like (not shown).

右側單元BM(B)係由作為支柱的一對水平保持塊體上部27a以及一對水平保持塊體下部27b所保持。水平保持塊體下部27b固定於架台1,水平保持塊體上部27a旋轉自如地保持傾斜台23b。於水平保持塊體上部27a與水平保持塊體下部27b之間設置有滑動單元(圖中未示),水平保持塊體上部27a可在x軸方向上滑動調整。而且,於+y軸側及-y軸側之水平保持塊體上部27a設置有傾斜軸28,傾斜台23b、第2製品台24b、及第2製品夾固單元25b以能夠以傾斜軸28作為旋轉軸而傾斜之方式而受到保持。傾斜軸28例如於水平塊體上部27a設置軸承座,並藉由被按入至該軸承座中之滾珠軸承來保持該傾斜軸28。此處,將水平保持塊體上部27a及傾斜軸28稱為傾斜機構。The right unit BM (B) is held by a pair of horizontal holding block upper portions 27a as a pillar and a pair of horizontal holding block lower portions 27b. The horizontal holding block lower portion 27b is fixed to the gantry 1, and the horizontal holding block upper portion 27a rotatably holds the inclined table 23b. A sliding unit (not shown) is disposed between the horizontal holding block upper portion 27a and the horizontal holding block lower portion 27b, and the horizontal holding block upper portion 27a is slidably adjustable in the x-axis direction. Further, the horizontal holding block upper portion 27a on the +y-axis side and the -y-axis side is provided with the tilting shaft 28, and the inclined table 23b, the second product stage 24b, and the second product holding unit 25b are rotatable by the tilting shaft 28 The shaft is held while being tilted. The tilting shaft 28 is provided with a bearing housing, for example, in the horizontal block upper portion 27a, and the tilting shaft 28 is held by a ball bearing that is pressed into the bearing housing. Here, the horizontal holding block upper portion 27a and the inclined shaft 28 are referred to as a tilt mechanism.

第1製品夾固單元25a固定基板左部GL,並使剪應力以及彎曲應力集中於基板之劃線SL。於第1製品夾固單元25a設置有對基板G之劃線SL附近進行推壓之第1夾固條29a。該第1夾固條29a之頂端位於第1製品台24a之右側邊緣,可於z軸方向上微動。同樣,第2製品夾固單元25b固定基板右部GR,並使剪應力以及彎曲應力集中於基板之劃線SL。於第2製品夾固單元25b設置有對基板G之劃線SL附近進行推壓之第2夾固條29b。第2夾固條29b之頂 端位於第2製品台24b之左側邊緣,可於Z方向上微動。The first product clamping unit 25a fixes the left portion GL of the substrate, and concentrates the shear stress and the bending stress on the scribe line SL of the substrate. The first product clamping unit 25a is provided with a first clamping strip 29a that presses the vicinity of the scribe line SL of the substrate G. The tip end of the first nip 29a is located on the right side edge of the first product table 24a, and is slightly movable in the z-axis direction. Similarly, the second product pinching unit 25b fixes the right portion GR of the substrate, and concentrates the shear stress and the bending stress on the scribe line SL of the substrate. The second product clamping unit 25b is provided with a second clamping strip 29b that presses the vicinity of the scribe line SL of the substrate G. The top of the second clamp strip 29b The end is located at the left edge of the second product table 24b and can be slightly moved in the Z direction.

作為基板G之保持方法,可藉由真空吸附及其他方法而固定於製品台上。當基板為玻璃、且其表面上成膜有樹脂時,亦可藉由靜電吸附而加以固定。The method of holding the substrate G can be fixed to the product stage by vacuum adsorption or other methods. When the substrate is glass and a resin is formed on the surface thereof, it may be fixed by electrostatic adsorption.

繼而,就傾斜台23b之傾斜機構加以說明。如圖5a、b所示,水平保持塊體上部27a之傾斜軸28,使水平保持塊體下部27b除外之整個右側單元BM(B)能夠以該傾斜軸28為旋轉軸而在圖6a中之CW方向或CCW方向上旋轉。圖6a係表示傾斜軸28之安裝位置的斷裂裝置之主要部分剖面圖。為了經由傾斜機構使傾斜台23b旋轉,而設置有旋轉控制部30。旋轉控制部30可使用馬達之旋轉力或液壓缸來使傾斜台23b旋轉既定角度,或者,亦可經由臂或連桿而手動地旋轉傾斜台23b。又,傾斜台23b係在開始旋轉之同時在+x軸方向上移動。Next, the tilting mechanism of the tilting table 23b will be described. As shown in Figs. 5a and 5b, the tilting shaft 28 of the block upper portion 27a is horizontally held so that the entire right side unit BM (B) except the horizontal holding block lower portion 27b can be rotated with the tilting axis 28 in Fig. 6a. Rotate in the CW direction or CCW direction. Fig. 6a is a cross-sectional view showing the main part of the breaking device showing the mounting position of the tilt shaft 28. The rotation control unit 30 is provided to rotate the tilting table 23b via the tilt mechanism. The rotation control unit 30 can rotate the tilting table 23b by a predetermined angle using a rotational force of a motor or a hydraulic cylinder, or can manually rotate the tilting table 23b via an arm or a link. Further, the tilting table 23b moves in the +x-axis direction while starting the rotation.

斷裂裝置之初始設定中,第1製品台24a與第2製品台24b係定位成相對於一片基板G保持同一載置面。調整傾斜軸28之高度,以使該傾斜軸28在自載置於台上之基板G之上表面與下表面觀察時均位於中央位置。In the initial setting of the breaking device, the first product stage 24a and the second product stage 24b are positioned to maintain the same mounting surface with respect to one of the substrates G. The height of the tilting shaft 28 is adjusted such that the tilting shaft 28 is at a central position when viewed from the upper surface and the lower surface of the substrate G placed on the stage.

將基板G之厚度設為2d0 。第1製品台24a之載置面為(x,y,-d0 ),傾斜軸28之位置為(0,y,-d0 ~+d0 )。傾斜軸28之位置可根據基板G之厚度及材料而調整。又,將第1製品台24a之右邊緣與第2製品台24b之左邊緣的間隔設為2g時,較理想為,第1夾固條29a對基板G之推壓位置與第2夾固條29b對基板G之推壓位置的間隔與2g為相同程 度。此外,較理想為,傾斜軸28與基板G之劃線SL平行,且位於基板之厚度範圍內。The thickness of the substrate G is set to 2d 0 . The mounting surface of the first product stage 24a is (x, y, -d 0 ), and the position of the tilt axis 28 is (0, y, -d 0 to +d 0 ). The position of the tilting shaft 28 can be adjusted according to the thickness and material of the substrate G. Further, when the distance between the right edge of the first product table 24a and the left edge of the second product table 24b is 2 g, it is preferable that the first clamp bar 29a presses the substrate G and the second clamp bar The interval between the pressing positions of 29b and the substrate G is the same as 2g. Further, it is preferable that the tilt axis 28 is parallel to the scribe line SL of the substrate G and is located within the thickness range of the substrate.

圖6(b)係以劃線SL為中心之斷裂裝置的局部放大剖面圖。此處,用實線來表示基板G的分割後之位置。將傾斜軸28之位置(x,y,z)設為(0,y,0)。於分割後之基板右部GR,將劃線SL之終點設為PR。又,將基板右部GR與第2製品台24b之左邊緣相接觸之線的終點設為PR'。此外,使基板G分割切斷之前的PR與PL(分割後之基板左部GL的劃線SL之終點)一致。Fig. 6(b) is a partially enlarged cross-sectional view showing the breaking device centered on the scribe line SL. Here, the position after division of the substrate G is indicated by a solid line. The position (x, y, z) of the tilt axis 28 is set to (0, y, 0). On the right side of the divided substrate GR, the end point of the scribe line SL is set to PR. Further, the end point of the line in which the right side portion GR of the substrate and the left edge of the second product stage 24b are in contact with each other is set to PR'. Further, the PR before the division and the cutting of the substrate G is made to coincide with the PL (the end point of the scribe line SL of the divided left portion GL of the substrate).

如圖6(b)所示,當使第2製品台24b向CCW方向傾斜角度θ時,點PR'之位置自(0,y,0)移動至(x2 ,y,z2 )。此處,各座標值如下所示。As shown in FIG. 6(b), when the second product stage 24b is inclined by an angle θ in the CCW direction, the position of the point PR' moves from (0, y, 0) to (x 2 , y, z 2 ). Here, the coordinate values are as follows.

x1 =0 z1 =-d0 x2 =d0 Sin θ z2 =d0 (1-COS θ)-d0 x 1 =0 z 1 =-d 0 x 2 =d 0 Sin θ z 2 =d 0 (1-COS θ)-d 0

若藉由第2夾固條29b之推壓力使基板右部GR之點PR'(x2 ,Y,z2 )之部分相對於第2製品台24b而成為不動點,則自上述不動點PR'向位於基板右部GR之點PR的斷裂部分施加剪力以及拉伸力(彎曲力矩),而將基板G分割。切斷基板G時藉由滑動機構26使-x軸方向之彈壓力作用於基板左部GL,又,傾斜台23b在開始旋轉之同時向+x軸方向移動,並且作為基板左部GL之切割面的右邊緣部向-x軸方向後退,而不與基板右部GR之左邊緣部接觸。因 此,不會損傷玻璃基板之分割面,可獲得平滑之分割面。When the portion of the point PR' (x 2 , Y, z 2 ) of the right portion GR of the substrate becomes a fixed point with respect to the second product stage 24b by the pressing force of the second nip 29b, the fixed point PR is The shearing force and the tensile force (bending moment) are applied to the fracture portion located at the point PR of the right portion GR of the substrate, and the substrate G is divided. When the substrate G is cut, the elastic force in the -x-axis direction acts on the left portion GL of the substrate by the sliding mechanism 26, and the tilting table 23b moves in the +x-axis direction while starting to rotate, and serves as a cutting surface of the left portion GL of the substrate. The right edge portion retreats in the -x-axis direction without coming into contact with the left edge portion of the right portion GR of the substrate. Therefore, the divided surface of the glass substrate is not damaged, and a smooth divided surface can be obtained.

計算此時之水平移動量x2 -x1 ,當θ=3°時,x2 -x1 為0.039mm。The horizontal movement amount x 2 -x 1 at this time is calculated, and when θ = 3°, x 2 -x 1 is 0.039 mm.

於劃線SL處左右分割之基板GR、GL,自基板G上解除第1夾固條29a、第2夾固條29b,藉此,可自製品台卸下基板GR、GL。將在x軸方向上呈帶狀之一片基板分割成多數個部分時,於基板G之既定位置分別設置劃線SL。繼而,在x方向上以既定間距搬送基板G,並設置製品夾固單元25a、25b,逐次使傾斜台23b傾斜。藉由重複此種操作,可由一片母基板製造出複數片基板。The substrates GR and GL which are divided into right and left at the scribe line SL are used to release the first slats 29a and the second slats 29b from the substrate G, whereby the substrates GR and GL can be detached from the product stage. When one of the strip-shaped substrates in the x-axis direction is divided into a plurality of portions, the scribe lines SL are respectively provided at predetermined positions of the substrate G. Then, the substrate G is conveyed at a predetermined pitch in the x direction, and the product pinching units 25a and 25b are provided, and the tilting table 23b is sequentially inclined. By repeating this operation, a plurality of substrates can be fabricated from a single mother substrate.

若第2製品台傾斜,則施加彎曲力矩(彎曲應力),使基板之剖面以劃線形成位置為中心而形成V字。而且,當以形成V字之方式施加彎曲力矩時,裂痕自基板下表面(與製品台相接觸之面)擴展,故彎曲力矩集中於更接近下表面側之裂痕頂端部分(週期裂痕之山峰)。此時,於週期裂痕之谷底處,相對紙面在前後部分裂痕頂端僅較淺地延伸,故開始分割時需要較大之彎曲力矩。相對於此,於週期裂痕之山峰處,相對於紙面在前後部分裂痕頂端更深地延伸,故開始分割時無需較大之彎曲力矩。因此,可容易地將週期裂痕之山峰作為起點而分割。When the second product stage is inclined, a bending moment (bending stress) is applied, and the cross section of the substrate is formed in a V shape centering on the position where the scribe line is formed. Further, when a bending moment is applied in a manner of forming a V-shape, the crack spreads from the lower surface of the substrate (the surface in contact with the product table), so the bending moment concentrates on the tip end portion of the crack closer to the lower surface side (the peak of the periodic crack) . At this time, at the bottom of the periodic crack, the tip of the crack is only slightly extended at the tip of the front and rear portions of the paper, so a large bending moment is required at the start of the division. On the other hand, at the peak of the periodic crack, the paper surface extends deeper at the tip end of the front and rear cracks, so that a large bending moment is not required when starting the division. Therefore, the peak of the periodic crack can be easily divided as a starting point.

(第二實施形態)(Second embodiment)

其次,說明作為本發明之第二實施形態之使用雷射剝蝕加工之分割方法。此處,以分割一片藍寶石基板之情形為例進行說明。該分割方法中,使用沿著分割預定線形成 週期槽之雷射剝蝕裝置、以及沿著所形成之週期槽施加彎曲力矩(斷裂壓)之斷裂裝置。其中,斷裂裝置與第一實施形態中所說明之斷裂裝置相同,故省略說明。Next, a division method using a laser ablation processing as a second embodiment of the present invention will be described. Here, a case where a single sapphire substrate is divided will be described as an example. In the dividing method, the use is formed along a dividing line A laser ablation device for a periodic groove, and a breaking device for applying a bending moment (breaking pressure) along the formed periodic groove. Here, the breaking device is the same as the breaking device described in the first embodiment, and thus the description thereof is omitted.

就雷射剝蝕裝置加以說明。圖7係作為本發明之一實施形態的脆性基板之分割方法中所使用之雷射剝蝕裝置的構成圖,圖8係其控制系統之方塊圖。此外,對與圖1、圖2之雷射劃線裝置LS相同之構成部分標記相同符號,藉此省略部分說明。該雷射剝蝕裝置LA中,使用與雷射劃線裝置相比更容易使基板熔融之短波長雷射。又,加熱後之強制冷卻亦並非必需,故不使用冷卻機構。The laser ablation device will be described. Fig. 7 is a view showing a configuration of a laser ablation apparatus used in a method of dividing a brittle substrate according to an embodiment of the present invention, and Fig. 8 is a block diagram of a control system. Incidentally, the same components as those of the laser scribing device LS of FIGS. 1 and 2 are denoted by the same reference numerals, and the description thereof will be omitted. In the laser ablation device LA, a short-wavelength laser which is easier to melt the substrate than the laser scribing device is used. Moreover, forced cooling after heating is not necessary, so no cooling mechanism is used.

繼而,就雷射剝蝕裝置LA之整體構成加以說明。用以使藍寶石基板G之位置在XY方向以及旋轉方向上移動之滑台2、台座7、旋轉台12,與雷射劃線裝置LS中的相同。Next, the overall configuration of the laser ablation device LA will be described. The slide table 2, the pedestal 7, and the rotary table 12 for moving the position of the sapphire substrate G in the XY direction and the rotational direction are the same as those in the laser scribing device LS.

於旋轉台12之上方,於安裝框架15固定有雷射35以及光學系統調整機構36,上述雷射35以預定之輸出以及脈衝間隔振盪射出雷射光束(原光束),上述光學系統調整機構36使原光束聚光以於玻璃基板G之表面上或表面附近形成光束點HS(圖8)。Above the rotating table 12, a laser 35 and an optical system adjusting mechanism 36 are fixed to the mounting frame 15, and the laser 35 oscillates a laser beam (original beam) with a predetermined output and a pulse interval. The optical system adjusting mechanism 36 is provided. The original beam is condensed to form a beam spot HS (Fig. 8) on or near the surface of the glass substrate G.

為了以熔融溫度以上之溫度進行加熱以使基板材料熔融,雷射35係使用波長較短之雷射,例如UV雷射。In order to heat the substrate material at a temperature above the melting temperature, the laser 35 uses a laser having a shorter wavelength, such as a UV laser.

圖9係表示光學系統調整機構36之內部構成之圖。沿著雷射光束之光路L安裝有凸透鏡36a,且可利用由馬達(圖中未示)所驅動之透鏡位置調整機構36b來調整位置。藉由改變該凸透鏡36a之焦點位置,可設定光束點HS之形狀 並且調整熔融基板時之深度位置。Fig. 9 is a view showing the internal configuration of the optical system adjusting mechanism 36. A convex lens 36a is attached along the optical path L of the laser beam, and the position can be adjusted by a lens position adjusting mechanism 36b driven by a motor (not shown). The shape of the beam spot HS can be set by changing the focus position of the convex lens 36a. And adjust the depth position when the substrate is melted.

繼而,就控制系統加以說明。如圖8所示,雷射剝蝕裝置LA之控制系統係由控制部50、輸入部51、顯示部52、儲存部55以及於各驅動部(於控制部50之控制下受到驅動之台驅動部61、雷射驅動部62、攝影機驅動部66、光學系統驅動部63)所構成。Then, the control system is explained. As shown in FIG. 8, the control system of the laser ablation device LA is composed of a control unit 50, an input unit 51, a display unit 52, a storage unit 55, and each drive unit (a drive unit that is driven under the control of the control unit 50). 61. The laser driving unit 62, the camera driving unit 66, and the optical system driving unit 63) are configured.

儲存部55中,預先儲存有基板之掃描速度、雷射光束之焦點深度、雷射照射強度(雷射功率)、以及雷射脈衝間隔,作為控制參數。該等控制參數可藉由輸入部51以及顯示部52上所顯示之輸入畫面而適當設定。In the storage unit 55, the scanning speed of the substrate, the depth of focus of the laser beam, the laser irradiation intensity (laser power), and the laser pulse interval are stored in advance as control parameters. These control parameters can be appropriately set by the input screen displayed on the input unit 51 and the display unit 52.

又,控制部50根據儲存部55中所儲存之上述控制參數,生成用以形成週期槽之控制訊號。亦即,藉由產生使控制參數的至少一個週期性地變化之控制訊號而進行如下控制,即,使基板G產生沿著分割預定線而週期性變化之熔融狀態。具體之控制將於後文中描述。所生成之控制訊號被分別傳送至所對應之驅動部而實行控制動作。Further, the control unit 50 generates a control signal for forming a periodic groove based on the control parameter stored in the storage unit 55. That is, by generating a control signal that periodically changes at least one of the control parameters, the substrate G is caused to have a molten state that periodically changes along the planned dividing line. The specific control will be described later. The generated control signals are transmitted to the corresponding drive units to perform control operations.

繼而就各驅動部加以說明。台驅動部61對用以對滑台2及台座7、旋轉台12進行定位之馬達(馬達9等)進行驅動。形成週期槽時,根據儲存部55中所設定之掃描速度,對台座7於X方向上進行掃描。Then, each drive unit will be described. The stage drive unit 61 drives a motor (motor 9 or the like) for positioning the slide table 2, the pedestal 7, and the rotary table 12. When the periodic groove is formed, the pedestal 7 is scanned in the X direction in accordance with the scanning speed set in the storage unit 55.

雷射驅動部62自雷射35照射雷射光束。形成週期槽時,根據儲存部55中所設定之雷射照射強度(輸出)、雷射脈衝間隔而照射雷射光束。The laser driving unit 62 irradiates the laser beam from the laser light 35. When the periodic groove is formed, the laser beam is irradiated according to the laser irradiation intensity (output) and the laser pulse interval set in the storage portion 55.

光學系統驅動部63對光學系統調整機構36之透鏡位 置調整機構36b進行驅動。形成週期槽時,根據儲存部55中所設定之焦點深度來調整雷射光束之焦點位置。The lens position of the optical system adjustment mechanism 36 to the optical system adjustment mechanism 36 The adjustment mechanism 36b is driven. When the periodic groove is formed, the focus position of the laser beam is adjusted in accordance with the depth of focus set in the storage portion 55.

繼而,就形成週期槽時之控制訊號加以具體說明。為了形成週期槽,而生成上述控制參數中之至少一個週期性變化之控制訊號。以下,就控制參數逐一進行說明。Then, the control signal when forming the periodic slot is specifically described. In order to form a periodic slot, a control signal that periodically changes at least one of the above control parameters is generated. Hereinafter, the control parameters will be described one by one.

(1)掃描速度(1) Scanning speed

就使掃描速度週期變化、而將其他條件維持為固定之控制訊號而言,掃描速度較快之部分中槽之深度變淺,而掃描速度較慢之部分中槽之深度變深。亦即,掃描速度較慢之部分的供熱量增加而受到強烈熔融,該部分之槽形成得較深。In the case where the scanning speed is periodically changed while the other conditions are maintained as a fixed control signal, the depth of the groove in the portion where the scanning speed is faster becomes shallower, and the depth of the groove in the portion where the scanning speed is slower becomes deeper. That is, the portion of the slower scanning portion is heated to be strongly melted, and the groove of the portion is formed deeper.

(2)焦點深度(2) Depth of focus

就使雷射光束之焦點深度週期變化、而將其他條件維持為固定(掃描速度亦為固定)之控制訊號而言,焦點深度處於基板表面或較淺位置之部分中槽深度變淺,而焦點深度處於較深位置之部分中槽深度變深。亦即,焦點深度形成得較深之部分較深地受到強烈熔融,從而槽延伸得較深。In the case of a control signal that causes the focus depth of the laser beam to change periodically while maintaining other conditions to be fixed (the scanning speed is also fixed), the depth of the groove is shallower in the portion of the substrate surface or the shallower position, and the focus is The depth of the groove becomes deeper in the portion where the depth is deeper. That is, the deeper portion of the depth of focus is strongly melted deeper, so that the groove extends deeper.

(3)雷射照射強度(3) Laser irradiation intensity

就使雷射照射強度週期變化、而將其他條件維持為固定之控制訊號而言,雷射光束之照射強度較弱之部分中槽深度變淺,而照射強度較強之部分中槽深度變深。亦即,照射強度較強之部分中供熱量增加而受到強烈熔融,該部分之槽形成得較深。In the case of a control signal that causes the laser irradiation intensity to change periodically while maintaining other conditions to be fixed, the depth of the groove in the weaker portion of the laser beam becomes shallower, and the groove depth becomes deeper in the portion where the irradiation intensity is stronger. . That is, the portion where the irradiation intensity is strong is increased in heat and is strongly melted, and the groove of the portion is formed deep.

(4)雷射脈衝間隔(4) Laser pulse interval

於使雷射之脈衝間隔週期變化、而將其他條件維持為固定之情形時,雷射之脈衝間隔較長之部分中槽深度變淺,脈衝間隔較短之部分中槽深度變深。亦即,脈衝間隔較短之部分中的供熱量增加而受到強烈熔融,該部分之槽形成得較深。When the period of the pulse interval of the laser is changed and other conditions are maintained to be fixed, the groove depth becomes shallower in the portion where the laser pulse is longer, and the groove depth becomes deeper in the portion where the pulse interval is shorter. That is, the heat supply in the portion where the pulse interval is shorter is increased and is strongly melted, and the groove of the portion is formed deep.

又,關於上述(1)~(4)之控制參數,亦可使複數個控制參數同時產生週期變化。例如,亦可使掃描速度與焦點深度同時變化。Further, regarding the control parameters of the above (1) to (4), a plurality of control parameters may be simultaneously changed in a periodic manner. For example, the scanning speed can be changed simultaneously with the depth of focus.

繼而,就剝蝕動作加以說明。與先前之剝蝕動作相比,利用上述雷射剝蝕裝置LA時的不同點為,藉由一部分控制參數週期性變化之控制訊號而使驅動部動作,其餘相同。Then, the erosion action is explained. Compared with the previous ablation operation, the difference in the use of the above-described laser ablation device LA is that the drive unit is operated by a part of the control signal whose control parameters are periodically changed, and the rest are the same.

亦即,使光束點HS沿著分割預定線掃描,並使基板G熔融。此時,藉由一部分控制參數週期性變化之控制訊號來對各驅動部進行控制。藉此,於基板G中形成週期槽。That is, the beam spot HS is scanned along the division planned line, and the substrate G is melted. At this time, each of the driving sections is controlled by a part of the control signals whose control parameters are periodically changed. Thereby, a periodic groove is formed in the substrate G.

圖10係表示一邊使控制參數週期性地變化一邊進行雷射剝蝕加工時形成於基板G上的週期槽之示意圖,圖10(a)係基板G之立體圖,圖10(b)係A-A'剖面圖,圖10(c)係B-B'剖面圖,圖10(d)係C-C'剖面圖。Fig. 10 is a schematic view showing a periodic groove formed on the substrate G when the laser ablation processing is performed while periodically changing the control parameters, and Fig. 10(a) is a perspective view of the substrate G, and Fig. 10(b) is A-A. 'Sectional view, Fig. 10(c) is a B-B' cross-sectional view, and Fig. 10(d) is a C-C' cross-sectional view.

藉由使光束點HS以直線狀進行掃描,而如圖10(a)所示般形成槽Gr,並於基板表面形成直線狀之劃線AL。By scanning the beam spot HS in a straight line, the groove Gr is formed as shown in Fig. 10 (a), and a linear line AL is formed on the surface of the substrate.

此時,如圖10(a)、(b)所示,於沿板厚方向延伸之槽Gr的頂端部分,成為週期與控制參數變動之週期相同的波形W,且形成有週期槽。At this time, as shown in FIGS. 10(a) and 10(b), the tip end portion of the groove Gr extending in the thickness direction is a waveform W having the same period as the period in which the control parameter fluctuates, and a periodic groove is formed.

所形成之週期槽之波長對應於控制參數之變動週期(亦即波長)而變化。藉由使週期槽之波長為適當的波長,可在使用斷裂裝置BM對基板G施加彎曲力矩時,將彎曲力矩(斷裂壓)集中地施加於週期槽之波峰(山部分),且僅藉由施加較小之彎曲力矩就可容易且穩定地分割。The wavelength of the formed periodic groove varies according to the period of variation (i.e., wavelength) of the control parameter. By setting the wavelength of the periodic groove to an appropriate wavelength, when a bending moment is applied to the substrate G using the breaking device BM, a bending moment (breaking pressure) is collectively applied to the peak (mountain portion) of the periodic groove, and only by It is easy and stable to divide by applying a small bending moment.

就藍寶石之類的基板而言,根據經驗可判斷,可集中地施加彎曲力矩(斷裂壓)之週期槽的波長為1mm~10mm。因此,考慮到與掃描速度之關係而調整控制參數之週期,使其在該波長範圍內。In the case of a substrate such as sapphire, it is judged empirically that the wavelength of the periodic groove in which the bending moment (breaking pressure) can be collectively applied is 1 mm to 10 mm. Therefore, the period of the control parameter is adjusted in consideration of the relationship with the scanning speed so as to be in the wavelength range.

又,若週期槽之最大深度與最小深度之深度差為基板板厚的1%~5%,則週期槽之山以及谷之波峰部分可顯著地表現出來,因而斷裂裝置容易集中地施加彎曲力矩。Moreover, if the depth difference between the maximum depth and the minimum depth of the periodic groove is 1% to 5% of the thickness of the substrate, the peak of the periodic groove and the peak portion of the valley can be remarkably expressed, so that the breaking device can easily apply the bending moment intensively. .

此外,若延長雷射剝蝕之加工時間,則亦可使所形成之週期槽變深,然而,儘可能地縮短加工時間而於週期槽較淺之狀態下進行斷裂動作。即便週期槽之深度較淺,亦可藉由對週期槽之波峰部分集中地施加彎曲力矩,而以較小之彎曲力矩進行分割,而且亦可減少剝蝕加工中對基板表面所產生之污染。Further, if the processing time of the laser ablation is prolonged, the period groove formed may be deepened. However, the processing time is shortened as much as possible, and the breaking operation is performed in a state where the period groove is shallow. Even if the depth of the periodic groove is shallow, the bending moment can be applied to the peak portion of the periodic groove in a concentrated manner, and the bending can be performed with a small bending moment, and the contamination on the surface of the substrate in the ablation processing can also be reduced.

又,已對於藉由上述雷射剝蝕加工形成槽Gr之情形進行了說明,但視基板材料之材料或加熱條件不同,亦存在如下情形:如圖11所示,不僅形成有槽Gr,而且於槽Gr之底部形成有裂痕Cr,波形W係由週期槽以及週期裂痕所形成。Further, the case where the groove Gr is formed by the above-described laser ablation processing has been described. However, depending on the material of the substrate material or the heating conditions, there are cases where, as shown in FIG. 11, not only the groove Gr but also the groove is formed. A crack Cr is formed at the bottom of the groove Gr, and the waveform W is formed by a periodic groove and a periodic crack.

該情形亦與圖10中所說明之形成有週期槽之情形相 同,若於儘可能淺之週期槽以及週期裂痕之狀態下進行斷裂動作,則能以較小之彎曲力矩進行分割,而且可減少剝蝕加工中所產生之基板表面之污染。This situation is also related to the case where the periodic groove is formed as illustrated in FIG. Similarly, if the fracture operation is performed in the state of the shallowest periodic groove and the periodic crack, the division can be performed with a small bending moment, and the contamination of the surface of the substrate generated in the ablation process can be reduced.

[實施例][Examples]

其次,就本發明之實施形態之具體例加以說明。Next, a specific example of an embodiment of the present invention will be described.

(實施例1)改變冷媒噴射量而形成週期裂痕(Example 1) Changing the amount of refrigerant injection to form a periodic crack

於形成有初始龜裂TR之無鹼玻璃基板(長度300mm×寬度300mm×厚度0.7mm)上,掃描CO2 雷射(輸出為120W)而形成劃線,此時改變冷媒噴射量而形成週期裂痕。將光束點及冷卻點之掃描速度設為150mm/s,將冷媒噴射量之變動週期(切換間隔)設為1秒,以0.8cc/min、1cc/min,0.8cc/min依次來切換冷卻水量之設定。結果示於表1中。On the alkali-free glass substrate (length 300 mm × width 300 mm × thickness 0.7 mm) on which the initial crack TR was formed, a CO 2 laser (output of 120 W) was scanned to form a scribe line, and at this time, the amount of refrigerant injection was changed to form a periodic crack. . The scanning speed of the beam spot and the cooling point was set to 150 mm/s, and the fluctuation period (switching interval) of the refrigerant injection amount was set to 1 second, and the amount of cooling water was sequentially switched at 0.8 cc/min, 1 cc/min, and 0.8 cc/min. The setting. The results are shown in Table 1.

若將其他條件設定為固定,則每單位時間之冷卻水量較多的位置(距離端部150mm)的裂痕形成得較深。滲透深度之變動幅度為13μm~15μm,為基板板厚(0.7mm)之1.8%~2.1%。If other conditions are set to be fixed, cracks at a position where the amount of cooling water per unit time is large (150 mm from the end portion) is formed deep. The penetration depth varies from 13 μm to 15 μm, which is 1.8% to 2.1% of the substrate thickness (0.7 mm).

(實施例2)改變掃描速度而形成週期裂痕(Embodiment 2) Changing the scanning speed to form a periodic crack

於形成有初始龜裂TR之無鹼玻璃基板(長度300mm×寬度300mm×厚度0.7mm)上,掃描CO2 雷射(輸出為150w)而形成劃線,此時改變掃描速度而形成週期裂痕。On the alkali-free glass substrate (length 300 mm × width 300 mm × thickness 0.7 mm) on which the initial crack TR was formed, a CO 2 laser (output 150 w) was scanned to form a scribe line, at which time the scanning speed was changed to form a periodic crack.

使雷射光束及冷卻點之掃描速度以220mm/s與300mm/s兩種速度而改變。結果示於表2中。The scanning speed of the laser beam and the cooling point is changed at 220 mm/s and 300 mm/s. The results are shown in Table 2.

若使其他條件固定而改變掃描速度,則掃描速度較慢之位置形成有較深之裂痕。If the scanning speed is changed by fixing other conditions, a deep crack is formed at a position where the scanning speed is slow.

(實施例3)改變雷射照射強度(輸出)而形成週期裂痕(Example 3) Changing the laser irradiation intensity (output) to form a periodic crack

於形成有初始龜裂TR之無鹼玻璃基板(長度800mm×寬度300mm×厚度0.7mm)上,使用CO2 雷射形成劃線,此時改變照射強度而形成週期裂痕。On the alkali-free glass substrate (length 800 mm × width 300 mm × thickness 0.7 mm) on which the initial crack TR was formed, a scribe line was formed using a CO 2 laser, and at this time, the irradiation intensity was changed to form a periodic crack.

使雷射光束及冷卻點之掃描速度固定為220mm/s,使雷射照射強度(輸出)以150W與110W兩種功率而改變。結果示於表3。The scanning speed of the laser beam and the cooling point is fixed to 220 mm/s, so that the laser irradiation intensity (output) is changed by two powers of 150 W and 110 W. The results are shown in Table 3.

若使其他條件固定,則照射強度(輸出)較大之位置形成有較深之裂痕。If other conditions are fixed, a deep crack is formed at a position where the irradiation intensity (output) is large.

[表3][table 3]

(實施例4)改變光束形狀而形成週期裂痕(Embodiment 4) Changing the shape of the beam to form a periodic crack

於形成有初始龜裂TR之無鹼玻璃基板(長度300mm×寬度300mm×厚度0.7mm)上,使用CO2 雷射(輸出為150W)形成劃線,此時改變橢圓形狀之光束點之長軸以及短軸之長度而形成週期裂痕。On the alkali-free glass substrate (length 300 mm × width 300 mm × thickness 0.7 mm) on which the initial crack TR was formed, a scribe line was formed using a CO 2 laser (output of 150 W), at which time the long axis of the beam point of the elliptical shape was changed. And the length of the short axis forms a periodic crack.

使雷射光束及冷卻點之掃描速度固定為220mm/s,使長軸與短軸以(40mm×1.5mm)與(27mm×1.9mm)兩種形狀而改變。結果示於表4中。The scanning speed of the laser beam and the cooling point was fixed to 220 mm/s, and the long axis and the short axis were changed in two shapes of (40 mm × 1.5 mm) and (27 mm × 1.9 mm). The results are shown in Table 4.

若使其他條件固定,則光束點之長軸較長之位置形成有較淺之裂痕。If other conditions are fixed, a shallow crack is formed at a position where the long axis of the beam spot is long.

本發明可用於照射雷射光束對玻璃基板等脆性材料基板進行分割之方法中。The present invention can be used in a method of irradiating a laser beam to a substrate such as a glass substrate.

12‧‧‧旋轉台12‧‧‧Rotating table

13‧‧‧雷射(CO2 雷射)13‧‧ ‧ laser (CO 2 laser)

14‧‧‧光學系統調整機構14‧‧‧Optical system adjustment mechanism

16‧‧‧冷卻噴嘴16‧‧‧Cooling nozzle

16a‧‧‧流量調整閥16a‧‧‧Flow adjustment valve

16b‧‧‧噴嘴位置調整機構16b‧‧‧Nozzle position adjustment mechanism

23a、23b‧‧‧滑台23a, 23b‧‧‧ slide table

25a、25b‧‧‧製品夾固單元25a, 25b‧‧‧ product clamping unit

35‧‧‧雷射(UV雷射)35‧‧‧Laser (UV laser)

36‧‧‧光學系統調整機構36‧‧‧Optical system adjustment mechanism

50‧‧‧控制部50‧‧‧Control Department

53、55‧‧‧儲存部53, 55‧‧‧ Storage Department

CS‧‧‧冷卻點CS‧‧‧cooling point

HS‧‧‧光束點HS‧‧‧ beam spot

SL‧‧‧劃線(裂痕)SL‧‧‧Dash (crack)

AL‧‧‧劃線(槽)AL‧‧‧ditch (slot)

W‧‧‧週期裂痕或週期槽之波形W‧‧‧Period crack or periodic groove waveform

Cr‧‧‧裂痕Cr‧‧‧ crack

Gr‧‧‧槽Gr‧‧‧ slot

LS‧‧‧雷射劃線裝置LS‧‧•ray marking device

BM‧‧‧斷裂裝置BM‧‧‧ breaking device

LA‧‧‧雷射剝蝕裝置LA‧‧‧Laser ablation device

圖1係本發明之一實施形態的脆性基板之分割方法中所使用的雷射劃線裝置之構成圖。Fig. 1 is a view showing the configuration of a laser scribing apparatus used in a method of dividing a brittle substrate according to an embodiment of the present invention.

圖2係表示圖1中的雷射劃線裝置之控制系統之構成的方塊圖。Fig. 2 is a block diagram showing the configuration of a control system of the laser scribing device of Fig. 1.

圖3係表示圖1中的雷射劃線裝置之光學系統調整機構之內部構成的圖。Fig. 3 is a view showing the internal configuration of an optical system adjusting mechanism of the laser scribing device of Fig. 1.

圖4係表示已進行雷射劃線加工時形成於基板上的週期裂痕之示意圖。Fig. 4 is a view showing a periodic crack formed on a substrate when laser scribing is performed.

圖5a係本發明之一實施形態的脆性基板之分割方法中所使用的斷裂裝置之概略構成圖。Fig. 5a is a schematic configuration diagram of a breaking device used in a method of dividing a brittle substrate according to an embodiment of the present invention.

圖5b係表示圖5a中的斷裂裝置之左側單元(A)與右側單元(B)之分離狀態的立體圖。Fig. 5b is a perspective view showing a separated state of the left unit (A) and the right unit (B) of the breaking device of Fig. 5a.

圖6係用以說明形成有週期裂痕的玻璃基板之斷裂處理的示意圖。Fig. 6 is a schematic view for explaining a fracture process of a glass substrate on which a periodic crack is formed.

圖7係作為本發明之另一實施形態的脆性基板之分割方法中所使用的雷射剝蝕裝置之構成圖。Fig. 7 is a view showing the configuration of a laser ablation apparatus used in a method of dividing a brittle substrate according to another embodiment of the present invention.

圖8係表示圖7中的雷射剝蝕裝置的控制系統之構成的方塊圖。Fig. 8 is a block diagram showing the configuration of a control system of the laser ablation apparatus of Fig. 7.

圖9係表示圖7中的雷射剝蝕裝置的光學系統調整機構之內部構成的圖。Fig. 9 is a view showing the internal configuration of an optical system adjusting mechanism of the laser ablation device of Fig. 7.

圖10係表示已進行雷射剝蝕加工時形成於基板上之週期槽的示意圖。Fig. 10 is a schematic view showing a periodic groove formed on a substrate when laser ablation processing has been performed.

圖11係表示已進行雷射剝蝕加工時形成於基板上之週期槽以及週期裂痕的示意圖。Fig. 11 is a view showing a periodic groove and a periodic crack formed on a substrate when laser ablation processing has been performed.

圖12係表示藉由雷射照射而形成於基板內的槽或裂痕之例的示意剖面圖。Fig. 12 is a schematic cross-sectional view showing an example of a groove or a crack formed in a substrate by laser irradiation.

圖13係表示掃描光束點且繼而進行冷卻時基板內所產生之熱應變分布的示意剖面圖。Figure 13 is a schematic cross-sectional view showing the thermal strain distribution generated in the substrate when the beam spot is scanned and then cooled.

Cr‧‧‧裂痕Cr‧‧‧ crack

G‧‧‧玻璃基板G‧‧‧glass substrate

SL‧‧‧劃線(裂痕)SL‧‧‧Dash (crack)

TR‧‧‧初始龜裂TR‧‧‧ initial crack

W‧‧‧週期裂痕或週期槽之波形W‧‧‧Period crack or periodic groove waveform

Claims (8)

一種脆性材料基板之分割方法,包含:使藉由雷射光束之照射所形成之光束點沿著設定於脆性材料基板的分割預定線相對移動,且以軟化點以下之溫度自基板表面側對上述基板進行加熱,繼而,使藉由自噴嘴噴射冷媒所形成之冷卻點以追隨上述光束點之方式相對移動以使基板冷卻,藉此形成裂痕之步驟;以及,藉由沿著所形成之裂痕從基板背面側施加彎曲力矩而進行分離之斷裂步驟;其特徵在於:於形成裂痕之步驟中,藉由使加熱條件或/及冷卻條件沿著分割預定線週期性地變化,從而形成裂痕之最大深度在由基板內部之壓縮應力區域所限制之深度以內、且裂痕之深度沿著分割預定線方向以上述加熱條件或/及冷卻條件之週期變化之週期裂痕;形成該週期裂痕之步驟之加熱條件或冷卻條件,係使以下之(1)~(6)之至少任一個參數以下述方式週期性地變化:(1)使形成冷卻點之冷媒噴射量變化,淺裂痕即減少噴射量,深裂痕則增多噴射量;(2)使光束點之掃描速度變化,淺裂痕即增快掃描速度,深裂痕則減慢掃描速度;(3)使光束點通過後直至冷卻點到達為止的時間變化,淺裂痕即縮短時間,深裂痕則增長時間;(4)使形成光束點之雷射光束的照射強度變化,淺裂 痕即減弱照射強度,深裂痕則增強照射強度;(5)使形成光束點之雷射光束的脈衝間隔變化,淺裂痕即增長脈衝間隔,深裂痕則縮短脈衝間隔;以及(6)使光束點之形狀成為具有長軸之形狀且使其長軸方向成為沿著劃線預定線之方向而使該長軸方向之形狀變化,淺裂痕即增長長軸長度,深裂痕則縮短長軸長度。 A method for dividing a brittle material substrate, comprising: relatively moving a beam spot formed by irradiation of a laser beam along a dividing line set on a brittle material substrate, and from a substrate surface side at a temperature lower than a softening point The substrate is heated, and then the cooling point formed by ejecting the refrigerant from the nozzle is relatively moved in such a manner as to follow the beam spot to cool the substrate, thereby forming a crack; and, by forming a crack along the a step of breaking by applying a bending moment on the back side of the substrate; characterized in that in the step of forming a crack, the maximum depth of the crack is formed by periodically changing the heating condition and/or the cooling condition along the dividing line a crack within a depth limited by a region of compressive stress inside the substrate, and a depth at which the depth of the crack changes along a predetermined line of the heating condition or/and a period of the cooling condition; a heating condition of the step of forming the periodic crack or The cooling condition is such that at least one of the following parameters (1) to (6) periodically changes in the following manner. (1) The amount of refrigerant injected to form the cooling point is changed, the shallow crack is to reduce the amount of injection, the deep crack is to increase the injection amount; (2) the scanning speed of the beam point is changed, the shallow crack is increasing the scanning speed, and the deep crack is decreasing. Slow scanning speed; (3) time change after the beam point passes until the cooling point arrives, shallow cracks shorten the time, deep cracks increase the time; (4) change the irradiation intensity of the laser beam forming the beam spot, shallow crack The mark weakens the intensity of the illumination, and the deep crack enhances the intensity of the illumination; (5) changes the pulse interval of the laser beam forming the beam spot, the shallow crack increases the pulse interval, the deep crack shortens the pulse interval; and (6) makes the beam spot The shape has a long axis shape, and the long axis direction thereof changes in the direction along the predetermined line of the scribe line, and the shape of the long axis direction changes, the shallow crack increases the length of the major axis, and the deep crack shortens the length of the major axis. 如申請專利範圍第1項之脆性材料基板之分割方法,其中,上述週期裂痕之波長為10mm~200mm,週期裂痕之最大深度與最小深度之深度差為基板板厚的1%~5%。 The method for dividing a brittle material substrate according to claim 1, wherein the periodic crack has a wavelength of 10 mm to 200 mm, and a depth difference between the maximum depth and the minimum depth of the periodic crack is 1% to 5% of the thickness of the substrate. 如申請專利範圍第1項之脆性材料基板之分割方法,其中,脆性材料基板為玻璃基板。 The method for dividing a brittle material substrate according to claim 1, wherein the brittle material substrate is a glass substrate. 一種脆性材料基板之分割方法,包含:使藉由雷射光束之照射所形成的光束點沿著設定於脆性材料基板的分割預定線相對移動,且以熔融溫度以上之溫度對上述基板進行加熱以形成槽之步驟;以及,藉由沿著所形成之槽從基板背面側施加彎曲力矩,從而進行分離之斷裂步驟;其特徵在於:於形成槽之步驟中,藉由使加熱條件沿著分割預定線週期性地變化,從而形成槽之深度沿著分割預定線方向以上述加熱條件之週期變化之週期槽;形成該週期槽之步驟之加熱條件,係使以下之(1)~(3)之至少任一個參數以下述方式週期性地變化:(1)使雷射光束之掃描速度變化,淺槽即增快掃描速度,深槽則減慢掃描速度; (2)使雷射光束之照射強度變化,淺槽即減弱照射強度,深槽則增強照射強度;以及(3)使雷射光束之脈衝間隔變化,淺槽即增長脈衝間隔,深槽則縮短脈衝間隔。 A method for dividing a brittle material substrate, comprising: relatively moving a beam spot formed by irradiation of a laser beam along a dividing line set on a brittle material substrate, and heating the substrate at a temperature above a melting temperature to a step of forming a groove; and a step of separating the separation by applying a bending moment from the back side of the substrate along the formed groove; characterized in that in the step of forming the groove, the heating condition is predetermined along the division The line is periodically changed to form a periodic groove whose depth of the groove changes along the predetermined dividing line direction by the period of the heating condition; the heating condition of the step of forming the periodic groove is to make the following (1) to (3) At least one of the parameters periodically changes in the following manner: (1) changing the scanning speed of the laser beam, the shallow groove is increasing the scanning speed, and the deep groove is slowing down the scanning speed; (2) changing the illumination intensity of the laser beam, the shallow groove is to reduce the intensity of the illumination, the deep groove is to enhance the illumination intensity; and (3) the pulse interval of the laser beam is changed, the shallow groove is the pulse interval, and the deep groove is shortened. Pulse interval. 如申請專利範圍第4項之脆性材料基板之分割方法,其中,於形成槽之步驟中,形成週期槽並且於週期槽之底部形成週期裂痕,且向週期槽以及週期裂痕施加彎曲力矩。 A method of dividing a brittle material substrate according to claim 4, wherein in the step of forming the groove, the periodic groove is formed and a periodic crack is formed at the bottom of the periodic groove, and a bending moment is applied to the periodic groove and the periodic crack. 如申請專利範圍第4或5項之脆性材料基板之分割方法,其中,形成槽之步驟時之加熱條件,係使雷射光束之焦點的深度週期性地變化。 A method of dividing a substrate of a brittle material according to claim 4 or 5, wherein the heating condition in the step of forming the groove periodically changes the depth of the focus of the laser beam. 如申請專利範圍第4或5項之脆性材料基板之分割方法,其中,上述週期槽之波長為1mm~10mm,週期槽之最大深度與最小深度之深度差為基板板厚的1%~5%。 The method for dividing a brittle material substrate according to claim 4 or 5, wherein the wavelength of the periodic groove is 1 mm to 10 mm, and the difference between the maximum depth and the minimum depth of the periodic groove is 1% to 5% of the thickness of the substrate. . 如申請專利範圍第4或5項之脆性材料基板之分割方法,其中,脆性材料基板為藍寶石基板。The method for dividing a brittle material substrate according to claim 4 or 5, wherein the brittle material substrate is a sapphire substrate.
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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5379073B2 (en) * 2009-06-09 2013-12-25 三星ダイヤモンド工業株式会社 COOLING NOZZLE, COOLING METHOD USING THE COOLING NOZZLE, AND CRIMINATION METHOD FOR BRITTLE MATERIAL SUBSTRATE
JP5478957B2 (en) * 2009-06-30 2014-04-23 三星ダイヤモンド工業株式会社 Cleaving method of brittle material substrate
JP5194076B2 (en) * 2010-08-27 2013-05-08 三星ダイヤモンド工業株式会社 Laser cleaving device
KR101609657B1 (en) * 2011-04-06 2016-04-06 마우저-베르케 오베른도르프 마쉬넨바우 게엠베하 Method for fracture splitting workpieces, workpiece, and laser unit
CN102280238B (en) * 2011-05-19 2015-02-25 广东风华高新科技股份有限公司 Method for manufacturing chip components
CN103212785A (en) * 2012-01-20 2013-07-24 豪晶科技股份有限公司 Laser processing method and processed piece formed through same
JP5510486B2 (en) * 2012-03-23 2014-06-04 三星ダイヤモンド工業株式会社 Laser processing method, workpiece dividing method, and laser processing apparatus
JP6260168B2 (en) * 2013-09-25 2018-01-17 三星ダイヤモンド工業株式会社 Method and apparatus for processing brittle material substrate
JP2015062927A (en) * 2013-09-25 2015-04-09 三星ダイヤモンド工業株式会社 Processing method and processing device of brittle material substrate
WO2015063370A1 (en) * 2013-11-04 2015-05-07 Ledil Oy Light guide with grooves for dividing by bending
KR101641939B1 (en) * 2014-07-14 2016-07-22 한국미쯔보시다이아몬드공업(주) Apparatus and method for breaking substrate
DE102015000451A1 (en) * 2015-01-15 2016-07-21 Siltectra Gmbh Uneven Wafer and Method of Making an Uneven Wafer
TWI609754B (en) * 2015-09-29 2018-01-01 三星鑽石工業股份有限公司 Fragmentation method of brittle substrate
KR101980606B1 (en) * 2017-08-29 2019-05-21 한국미쯔보시다이아몬드공업(주) Tilting type panel breaking device of brittle material substrate and tilting type panel breaking method using the same
CN112620965A (en) * 2019-10-08 2021-04-09 台湾丽驰科技股份有限公司 Dual laser processing machine and processing method thereof
CN117123940B (en) * 2023-10-23 2023-12-22 雄县路成纸塑包装有限公司 Laser cutting device of antistatic plastic

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002316829A (en) * 2001-04-17 2002-10-31 Seiko Epson Corp Method for cutting glass substrate, method for manufacturing electro-optic device, electro-optic device, electronic apparatus and scribed groove former
WO2006011608A1 (en) * 2004-07-30 2006-02-02 Mitsuboshi Diamond Industrial Co., Ltd. Vertical crack forming method and vertical crack forming device in substrate
JP2006248075A (en) * 2005-03-11 2006-09-21 Tohoku Pioneer Corp Method and apparatus for working substrate using laser beam

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3792639B2 (en) * 2002-11-08 2006-07-05 株式会社日本エミック Cutting device
JP2004179556A (en) * 2002-11-28 2004-06-24 Kyocera Corp Ceramic substrate, method for forming groove, and laser machining apparatus
JP2004223796A (en) * 2003-01-21 2004-08-12 Kyoto Seisakusho Co Ltd Split processing method for fragile material
WO2004067243A1 (en) * 2003-01-29 2004-08-12 Mitsuboshi Diamond Industrial Co., Ltd. Substrate dividing apparatus and method for dividing substrate
JP2006131443A (en) * 2004-11-04 2006-05-25 Shibuya Kogyo Co Ltd Method and apparatus for cutting brittle material
JP4256840B2 (en) * 2004-12-24 2009-04-22 株式会社日本製鋼所 Laser cutting method and apparatus
JP5037138B2 (en) * 2005-01-05 2012-09-26 Thk株式会社 Work breaking method and device, scribing and breaking method, and scribing device with break function
KR100693934B1 (en) * 2006-03-24 2007-03-12 케이 이엔지(주) Glass cutting apparatus with bending member and method using thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002316829A (en) * 2001-04-17 2002-10-31 Seiko Epson Corp Method for cutting glass substrate, method for manufacturing electro-optic device, electro-optic device, electronic apparatus and scribed groove former
WO2006011608A1 (en) * 2004-07-30 2006-02-02 Mitsuboshi Diamond Industrial Co., Ltd. Vertical crack forming method and vertical crack forming device in substrate
JP2006248075A (en) * 2005-03-11 2006-09-21 Tohoku Pioneer Corp Method and apparatus for working substrate using laser beam

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