CN103212785A - Laser processing method and processed piece formed through same - Google Patents
Laser processing method and processed piece formed through same Download PDFInfo
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- CN103212785A CN103212785A CN2012100309745A CN201210030974A CN103212785A CN 103212785 A CN103212785 A CN 103212785A CN 2012100309745 A CN2012100309745 A CN 2012100309745A CN 201210030974 A CN201210030974 A CN 201210030974A CN 103212785 A CN103212785 A CN 103212785A
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Abstract
The invention relates to a laser processing method which comprises the following steps that a processed piece is provided; and the processed piece is provided with a first local area. A first laser beam is applied to the first local area, so as to form a first net point in the first local area, wherein a plurality of laser pulses in the first laser beam are distributed at a first special overlapping rate in the first local area, so that the first net point is distributed at a special depth.
Description
Technical field
The present invention relates to a kind of laser processing and formed workpiece thereof, is the laser processing and the formed workpiece thereof of workpiece with a substrate particularly, and this substrate after the processing is specially adapted to the LGP of backlight module.
Background technology
Recent flat-panel screens is universalness gradually, and wherein the size of backlight liquid crystal display module also strides forward to large scale, and the backlight liquid crystal display module can be divided into straight-down negative and side-light type.The light source that adopts the mode of straight-down negative to lay backlight module needs more luminescence component and than power consumption; The light source that the mode of employing side-light type is laid backlight module only needs provide light from a wherein side of LCD, therefore, from light source nearer with from light source brightness far away if there is not suitable processing, then the brightness meeting of LCD is inhomogeneous, described especially inhomogeneous be the challenge that large size panel faces.The design of the LGP of side light type back light module has significant effects for the briliancy backlight and the uniformity backlight, and wherein the design of the site on LGP influence is very huge, and good design then can provide the preferable briliancy backlight and the uniformity.
See also Fig. 1 a, it is the schematic diagram of LCD in the prior art.Available liquid crystal display 10 comprises a backlight module 11 and a liquid crystal panel 12.This backlight module 11 comprises a light source 110, a light source reflecting plate 111, a LGP 112, a bottom reflecting plate 113 and a prism thin layer 114.In Fig. 1 a, the light 13 that light source 110 is sent, 14 transmit with total reflection in LGP 112, up to running into site 1120 on LGP 112 and respectively at 1121 o'clock, the optical property (for example characteristic of concavees lens) by site 1120,1121 is with light 13,14 refractions, and can evenly scatter to this prism thin layer 114, this prism thin layer 114 can be assembled the light after the scattering, to strengthen briliancy backlight.
In Taiwan patent announcement numbers 1275878, the method for etching fold site has been described.See also Fig. 1 b, it is the schematic diagram of existing fold site.At first, the substrate 21 of one metal or acryl material is provided, provide a laser beam to substrate 21 tops then, and the same position on the reirradiation substrate 21, to form a fold site 22, again by mobile laser beam or moving substrate, and utilize laser beam reirradiation substrate 21, all forming fold site 22 successively on the diverse location of substrate 21, and laser beam can adopt pulse type laser, and the wavelength of laser beam is selected for use according to substrate material and decided.For example: when adopting the steel substrate, then can select Nd-YAG laser for use.At last, the substrate 21 that the surface is had a plurality of fold site 22 utilizes and injects transparent material shaping LGP directly as die 20 or see through the electroforming processing procedure again and form die, and the mode of shaping can be injection molding, hot pressing or casting.In this prior art, the degree of depth unanimity of this fold site 22 respectively, for the purpose that will reach high uniformity backlight, then need to rely in addition the density degree of fold site 22 on substrate 21, even yet arrange more sparse from the nearer fold site 22 of light source, and from light source fold site far away 22 arrange closeer, its even brightness degree and the briliancy space that still has greatly improved.
In Taiwan patent publication No. 201116902, existing laser-processing system 30 has been described.Shown in Fig. 1 c, existing laser-processing system 30 comprises a laser processing device 31 and a substrate 32.This laser processing device 31 comprises a platform unit 33, a light beam scanning unit 34, a laser module 35 and a control module 36.In Fig. 1 c, a machining cell 37 comprises a laser module 35 and locating unit 38.This positioning unit 38 comprises a light beam scanning unit 34 and a platform unit 33.
Laser energy parameter U11 in Fig. 1 c comprises a design pulse power R11, a design pulse frequency fl1 and design Q11 process time.Laser energy parameter U12 comprises a design pulse power R12, a design pulse frequency fl2 and design Q12 process time.When desired depth D11 and desired depth D12 are configured to when unequal, design pulse power R11, design pulse frequency fl1 are configured to not be equal to design pulse power R12, design pulse frequency fl2 and design Q12 process time (at least one pair of is unequal for three centerings) fully respectively with design Q11 process time, that is laser energy parameter U11 is configured to inequivalence in laser energy parameter U12.
Yet in the prior art in Fig. 1 c, the direction of two sites, 321,322 scattered beams still presents symmetry, and can't form the direction of the light scattering of asymmetry.
Summary of the invention
Because the radiation direction that derive the site of prior art can't form the direction of asymmetry, the present invention then proposes a kind of laser processing, the radiation direction that can make the site after the processing can derive asymmetry, with the selectivity in the increase design when designing the site, and more can strengthen the uniformity backlight and briliancy.
According to above-mentioned conception, a kind of laser processing is suggested, and it comprises the following step: a workpiece is provided, and this workpiece has one first regional area.Apply one first laser beam to this first regional area, to form one first site in this first regional area, wherein this first laser beam has a specific sweep speed distribution so that this first site has certain depth distribution in this first regional area.
According to above-mentioned conception, another kind of laser processing is suggested, and it comprises the following step: a workpiece is provided, and this workpiece has one first regional area.Apply one first laser beam to this first regional area, to form one first site in this first regional area, wherein a plurality of laser pulses of this first laser beam have one first specific Duplication distribution so that this first site has certain depth distribution in this first regional area.
According to above-mentioned conception, another kind of laser processing is suggested, and it comprises the following step: a workpiece is provided, and this workpiece has one first regional area.Apply one first laser beam to this first regional area, in this first regional area, to form one first site, wherein this first laser beam has one first particular energy and one first specific sweep speed distribution in this first regional area, so that this first site has one first aperture respectively and one first certain depth distributes.
According to above-mentioned conception, a kind of laser processing is suggested, and it comprises the following step: a workpiece is provided, and this workpiece has a zone for forming one first site.One first laser beam is provided, and it has a specific change pattern.Make this first laser beam on this workpiece, form this first site, distribute so that this zone has a particular characteristics.
According to above-mentioned conception, a kind of Laser Processing part is suggested, and it comprises a site, and this site is formed on this Laser Processing part and has a zone, a first surface and a second surface.This first surface is formed on this zone.This second surface is formed on this zone, and wherein the average surface curvature of this first surface is greater than the average surface curvature of this second surface.
Method provided by the present invention is simple and easy and economical, provides site diversity and elasticity in design according to the formed site of laser processing of the present invention, and more can strengthen the briliancy backlight and the uniformity.
Description of drawings
Fig. 1 a is the schematic diagram of available liquid crystal display;
Fig. 1 b is the schematic diagram of existing fold site;
Fig. 1 c is existing laser-processing system;
Fig. 2 a is the schematic diagram of the laser-processing system of the present invention's first preferred embodiment;
Fig. 2 b is the flow chart of the laser processing of the present invention's first preferred embodiment;
Fig. 2 c is the schematic diagram in the present invention first site and vertical section, second site;
Fig. 2 d is the schematic top plan view of LGP of the present invention;
Fig. 3 a is the schematic diagram of the laser-processing system of the present invention's second preferred embodiment;
Fig. 3 b is the flow chart of the laser processing of the present invention's second preferred embodiment;
Fig. 3 c is the schematic diagram in the present invention first site and vertical section, second site;
Fig. 3 d is the schematic top plan view of LGP of the present invention;
Fig. 4 a is the schematic diagram of the laser-processing system of the present invention's the 3rd preferred embodiment;
Fig. 4 b is the flow chart of the laser processing of the present invention's the 3rd preferred embodiment;
The schematic diagram in the hole that Fig. 4 c varies in size for the present invention's the 3rd preferred embodiment;
Fig. 4 d is the schematic diagram in the present invention first site and vertical section, second site;
Fig. 4 e is the schematic top plan view of LGP of the present invention;
Fig. 5 a is the flow chart of laser processing of the present invention; And
Fig. 5 b is through the formed Laser Processing part of laser processing of the present invention.
The drawing reference numeral explanation
10: LCD 11: backlight module
12: liquid crystal panel 13,14: the light that light source sent
110: light source 111: the light source reflecting plate
112: LGP 113: bottom reflecting plate
114: prism thin layer 1120,1121: site
20: die 21: substrate
22: fold site 30: existing laser-processing system
31: laser processing device 32: substrate
33: platform unit 34: light beam scanning unit
35: laser module 36: control module
37: machining cell 38: positioning unit
LA1, LU1, LA2, LU2: laser beam
PS1, PS2: location point 321,322: site
DA1, DA2: depth B 11, B12: machined parameters
U11, U12: laser energy parameter P11, P12: coordinate
D11, D12: desired depth R11, R12: design pulse power
F11, f12: design pulse frequency Q11, Q12: design process time
A1: control signal S1: laser energy control signal
S2: Position Control signal S11: the accurate signal in position
S12: pulse signal S21, S22: signal
40,50,60: laser-processing system 41,51,61: laser processing device
42,52,62: substrate 43,53,63: the platform unit
44,54,64: light beam scanning unit 45,55,65: laser module
46,56,66: control module 47,57,67: machining cell
48,58,68: positioning unit PS31, PS51, PS71: primary importance
LA4, LU4, LA6, LU6: the second laser beam LA3, LU3, LA5, LU5: first laser beam
PS32, PS52, PS72: second place PS41, PS61, PS81: the 3rd position
PS42, PS62, PS82: the 4th position DA3, DA5, DA7: first degree of depth
DA4, DA6, DA8: second degree of depth 421,521,621: the first sites
422,522,622: the second site P31, P51, P71: predetermined primary importance
RG2, RG4, RG6: the second local region R G1, RG3, RG5: first regional area
P32, P52, P72: predetermined second place P41, P61, P81: predetermined the 3rd position
P42, P62, P82: predetermined the 4th position D31, D41, D51, D61, D71, D81: predetermined
The degree of depth
SD3, SD4, SD5, SD6, SD7, SD8: sweep speed distributes
SD31, SD41, SD71, SD81: predetermined low speed SD32, SD42, SD72, SD82: at a high speed predetermined
The sweep speed sweep speed
U21, U22, U31, U32, U41, U42: laser R31, R41, R51, R61, R71, R81: design
The energy parameter pulse power
F31, f41, f51, f61, f71, f81: design pulse Q31, Q41, Q51, Q61, Q71, Q81: design
Frequency process time
A2, A3, A4: control signal S3, S5, S7: laser energy control signal
S4, S6, S8: move control signal S31, S51, S71: the accurate signal in position
S32, S52, S72: pulse signal 49,59,69: LGP
S43, S63, S83: speed control signal DT5, DT6: predetermined Duplication distributes
RG12, RG22: high-velocity scanning region R G11, RG21: low-velocity scanning zone
423,424,425,523,524,525,623,624, S41, S42, S61, S62, S81, S82: position control
625: site system signal
RG31, RG41: high Duplication distributed areas RG32, RG42: low Duplication distributed areas
LP1, LP2, LP3, LP4: laser pulse RG51, RG61: high energy distribution zone
RG52, RG62: low energy distribution zone 70: Laser Processing part
71: site 72: zone
73,4211,4221,5211,5221,6211,6221: first surface
74,4212,4222,5212,5222,6212,6222: second surface
DA31, DA51, DA71: the 3rd depth S F1, SF2, SF3: plane
LPD2, LPD4: the second pulse overlap rate LPD1, LPD3: the first pulse overlap rate
HS1, HS2: aperture H1, H2: hole
The specific embodiment
Please refer to accompanying drawing of the present invention and read following detailed description, accompanying drawing wherein of the present invention is in illustrational mode, introduces the various embodiment of the present invention, and how to realize the present invention for understanding.Preferred embodiment of the present invention provides sufficient content, implements preferred embodiment disclosed in this invention for those skilled in the art, or implements to comply with the preferred embodiment that content described in the invention is derived.It is noted that, those embodiment not mutual exclusions to each other, and part embodiment can do suitable the combination with other one or more embodiment, forming new preferred embodiment, that is enforcement of the present invention is not limited to following described preferred embodiment.
See also Fig. 2 a, it is the schematic diagram of the laser-processing system 40 of the present invention's first preferred embodiment.Laser-processing system 40 comprises a laser processing device 41 and a substrate 42.This laser processing device 41 comprises a platform unit 43, a light beam scanning unit 44, a laser module 45 and a control module 46.In Fig. 2 a, a machining cell 47 comprises a laser module 45 and locating unit 48.This positioning unit 48 comprises a light beam scanning unit 44 and a platform unit 43.This substrate 42 comprises one first local region R G1.For example, this substrate 42 more comprises at least one second local region R G2.
Laser processing device 41 is in order to form one first site 421 in this first local region R G1.For example, laser processing device 41 is more in order to form at least one second site 422 at least one second local region R G2.This first site 421 can be in order to moulding one LGP (not shown) with this at least one second site 422.For example, in this first local region R G1, only have this first site 421, and in this second local region R G2, only have this second site 422.The shape of first site 421 and second site 422 is not symmetric from the vertical section, first site 421 and second site 422 have one first depth D A3 and one second depth D A4 respectively, and in order to make a backlight module (not shown) that adopts this LGP send whole light uniformly, the first depth D A3 and the second depth D A4 can be unequal.The first local region R G1 comprises a primary importance PS31 and a second place PS32, and the second local region R G2 comprises one the 3rd position PS41 and one the 4th position PS42.
Control module 46 is provided with the first machined parameters B21 and the second machined parameters B22 according to the first local region R G1 and the second local region R G2 separately, and provides the first laser beam LU3 and the second laser beam LU4 to form first site 421 and second site 422 separately according to the first machined parameters B21, the second machined parameters B22 separately.The first machined parameters B21 comprises a desired depth D31, a laser energy parameter U21, a predetermined primary importance P31, a predetermined second place P32 and a predetermined sweep speed distribution SD3, and predetermined sweep speed distribution SD3 comprises a predetermined low-velocity scanning speed SD31 and a predetermined high-speed scanning velocity SD32.The second machined parameters B22 comprises a desired depth D41, a laser energy parameter U22, a predetermined primary importance P41, a predetermined second place P42 and a predetermined sweep speed distribution SD4, and predetermined sweep speed distribution SD4 comprises a predetermined low-velocity scanning speed SD41 and a predetermined high-speed scanning velocity SD32.And first site 421 has a depth D A3, and second site 422 has a depth D A4.The desired depth D31 of the first machined parameters B21 is configured to equate with the desired depth D32 of the second machined parameters B22 and makes the laser energy parameter U21 of the first machined parameters B21 and the laser energy parameter U22 of the second machined parameters B22 be configured to equivalence, and the laser energy parameter U22 of the laser energy parameter U21 of the first machined parameters B21 and the second machined parameters B22 is utilized to make the depth D A3 of first site 421 and the depth D A4 of second site 422 to be matched with the desired depth D31 of the first machined parameters B21 and the desired depth D41 of the second machined parameters B22 respectively.In another preferred embodiment, the desired depth D32 of the desired depth D31 of the first machined parameters B21 and the second machined parameters B22 can be configured to unequal.
Laser energy parameter U21 in Fig. 2 a comprises a design pulse power R31, a design pulse frequency f31 and design Q31 process time.Laser energy parameter U22 comprises a design pulse power R41, a design pulse frequency f41 and design Q41 process time.In a preferred embodiment, when desired depth D31 was configured to equate with desired depth D41, design pulse power R31, design pulse frequency f31 and design Q31 process time were configured to equal fully respectively to design pulse power R41, design pulse frequency f41 and design Q41 process time.In a preferred embodiment, after the first laser beam LU3 formed first site 421, the second laser beam LU4 formed second site 422 then.In another preferred embodiment, the first laser beam LU3 and the second laser beam LU4 can form first site 421 and second site 422 simultaneously respectively.In a preferred embodiment, the sweep speed of first laser beam and second laser beam can be set at uses predetermined low-velocity scanning speed SD31, SD41 to re-use predetermined high-speed scanning velocity SD32, SD42 earlier, or use earlier and be scheduled to high-speed scanning velocity SD32, SD42, re-use predetermined low-velocity scanning speed SD31, SD41, wherein predetermined low-velocity scanning speed SD31 and SD41 can set for and equate or unequal, are scheduled to high-speed scanning velocity SD32 and SD42 and also can set for and equate or unequal.
Machining cell 47 response one control signal A2 and provide the first laser beam LU3 and the second laser beam LU4 to form separately first site 421 and second site 422.Control module 46 is provided with the first machined parameters B11 according to primary importance PS31, second place PS32, according to the 3rd position PS41, the 4th position PS42 the second machined parameters B12 is set, and produces control signal A2 according to the first machined parameters B11 and the second machined parameters B12.Control signal A2 comprises that laser energy control signal S3 and moves control signal S4.Laser energy control signal S3 comprises an accurate signal S31 and a pulse signal S32.Move control signal S4 and predetermined primary importance P31, predetermined second place P32, predetermined the 3rd position P41, to be scheduled to the 4th position P42 relevant, and comprise a Position Control signal S41, a Position Control signal S42 and speed control signal S43, speed control signal S43 can control the sweep speed of the first laser beam LU3 or the second laser beam LU4.
See also Fig. 2 b, it is the flow chart of the present invention's first preferred embodiment laser processing.In step S201, a workpiece is provided, this workpiece has one first local region R G1.In step S202, apply one first laser beam LU3 to this first local region R G1, to form one first site 421 in this first local region R G1, wherein this first laser beam LU3 has a specific sweep speed distribution so that this first site 421 has certain depth distribution in this first local region R G1.This workpiece for example is a substrate 42, or is die, die and LGP one of them.For example, in this first local region R G1, only has this first site 421.In the present invention's first preferred embodiment, for example, the energy that the first laser beam LU3 or the second laser beam LU4 per second are exported is fixed, and vertical with the planar S F1 of this workpiece.For example, this first laser beam LU3 is applied to this first local region R G1 to form this first site 421 in one first period; In one first period, laser energy control signal S3 is held and moves control signal S4 this specific sweep speed distribution is formed.
When the first laser beam LU3 and the second laser beam LU4 add man-hour successively, then the step of Laser Processing is as follows: apply this first laser beam LU3 in this primary importance PS31.Move this first laser beam LU3 from slow to fast to this second place PS32.Stop this first laser beam LU3, to form this first site 421.Apply one second laser beam LU4 in the 3rd position PS41.Move this second laser beam LU4 from slow to fast to the 4th position PS42.Stop this second laser beam LU4 to form this second site 422.For example, in this second local region R G2, only has this second site 422.
See also Fig. 2 c, it is the schematic diagram in the present invention first site 421 and 422 vertical sections, second site.In a preferred embodiment, first site 421 is identical with the shape of second site 422 from the vertical section, and for each site, with respect to the position that the extreme value degree of depth is arranged, the both sides right and wrong in vertical section are symmetric.This first local region R G1 comprises a low-velocity scanning region R G11 and a high-velocity scanning region R G12, and this second local region R G2 comprises a low-velocity scanning region R G21 and a high-velocity scanning region R G22.For example, this specific sweep speed distributes and comprises one first sweep speed and one second sweep speed.This first laser beam LU3 processes in this low-velocity scanning region R G11 with this first sweep speed, and processes in this high-velocity scanning region R G12 with this second sweep speed, and wherein this second sweep speed is greater than this first sweep speed.This first laser beam LU3 causes this certain depth distribution to have one first depth capacity in this low-velocity scanning region R G11, and cause this certain depth to distribute in this high-velocity scanning region R G12 and have one the 3rd depth D A31, wherein this first depth capacity is greater than the 3rd depth D A31.The first depth D A3 equals the depth capacity that this first laser beam LU3 is caused at this low-velocity scanning region R G11.The depth capacity that this second laser beam LU4 is caused at this low-velocity scanning region R G21 is greater than the degree of depth that is caused at this high-velocity scanning region R G22, and wherein the second depth D A4 equals the depth capacity that this second laser beam LU4 is caused at this low-velocity scanning region R G21.In another preferred embodiment, the shape of first site 421 and second site 422 can be inequality and right and wrong are symmetric from the vertical section, and sweep speed distributes can be identical, also can be different, decide according to the demand of site design.
In another preferred embodiment, utilize the laser processing of first preferred embodiment, this workpiece is more processed and have at least one the 3rd site, and the vertical section of this at least one the 3rd site is symmetrical.
See also Fig. 2 d, the schematic diagram that it is overlooked for LGP 49 of the present invention.LGP 49 comprises first site 421, second site 422, and site 423 at least, 424,425, the relativeness of primary importance PS31 and second place PS32 can be changed arbitrarily, the relativeness of primary importance PS41 and second place PS42 also can be changed arbitrarily, that is primary importance PS31, PS41 points to second place PS32, the direction of PS42 can be changed arbitrarily, the direction that primary importance PS31 points to second place PS32 and the direction of primary importance PS41 sensing second place PS42 can be equidirectional (for example sensing DIR of the sensing DIR of first site 421 and second site 422) or different directions, and (for example the site 423,424,425 sensing DIR), this can design according to the result of optics emulation, or can do suitable correction according to the result that reality measures the light uniformity of LGP 49.
In the present invention's first preferred embodiment, the concrete data for example maximum radius of this first local region R G1 and this second local region R G2 are 50 microns.First depth capacity of this first local region R G1 and this second local region R G2 is 5 microns.Distance between this first local region R G1 and this second local region R G2 is not less than the maximum radius of this first local region R G1 or the maximum radius of this second local region R G2, and be 1 millisecond average time that wherein forms this first site 421 or this second site 422.
See also Fig. 3 a, it is the schematic diagram of the present invention's second preferred embodiment laser-processing system 50.The laser-processing system 50 of second preferred embodiment and the laser-processing system 40 of first preferred embodiment are similar, and different places are machined parameters, and in addition, processing method also has difference.Laser-processing system 50 comprises a laser processing device 51 and a substrate 52.This laser processing device 51 comprises a platform unit 53, a light beam scanning unit 54, a laser module 55 and a control module 56.In Fig. 3 a, a machining cell 57 comprises a laser module 55 and locating unit 58.This positioning unit 58 comprises a light beam scanning unit 54 and a platform unit 53.This substrate 52 comprises at least one first local region R G3 and one second local region R G4.
Control module 56 is provided with the first machined parameters B31 and the second machined parameters B32 according to the first local region R G3 and the second local region R G4 separately, and provides the first laser beam LU5 and the second laser beam LU6 to form first site 521 and second site 522 separately according to the first machined parameters B31, the second machined parameters B32 separately.Each (as B31) of the first machined parameters B31 and the second machined parameters B32 comprises that a desired depth (as D51), a laser energy parameter (as U31), a predetermined primary importance (as P51), a predetermined second place (as P52), a predetermined sweep speed distribute (as SD5) and a predetermined Duplication distributes (as DT5), and first site 521 and second site 522 each (as 521) have a degree of depth (as DA5).The desired depth D51 of the first machined parameters B31 is configured to equate with the desired depth D52 of the second machined parameters B32 and makes the laser energy parameter U31 of the first machined parameters B31 and the laser energy parameter U32 of the second machined parameters B32 be configured to equivalence, and the laser energy parameter U32 of the laser energy parameter U31 of the first machined parameters B31 and the second machined parameters B32 is utilized to make the depth D A5 of first site 521 and the depth D A6 of second site 522 to be matched with the desired depth D51 of first machined parameters 321 and the desired depth D61 of the second machined parameters B32 respectively.
Laser energy parameter U31 in Fig. 3 a comprises a design pulse power R51, a design pulse frequency f51 and design Q51 process time.Laser energy parameter U32 comprises a design pulse power R61, a design pulse frequency f61 and design Q61 process time.In a preferred embodiment, when desired depth D51 was configured to equate with desired depth D61, design pulse power R51, design pulse frequency f51 and design Q51 process time were configured to equal fully respectively to design pulse power R61, design pulse frequency f61 and design Q61 process time.In a preferred embodiment, after the first laser beam LU5 formed first site 521, the second laser beam LU6 formed second site 522 then.In another preferred embodiment, the first laser beam LU5 and the second laser beam LU6 can form first site 521 and second site 522 simultaneously respectively.In a preferred embodiment, predetermined Duplication distribution DT5, the DT6 of the first laser beam LU5 and the second laser beam LU6 can be set at by closely to sparse, or be by sparse to tight, wherein be scheduled to Duplication distribution DT5 and DT6 and can set for and equate or unequal.
In a preferred embodiment, when the sweep speed of the first laser beam LU5 or the second laser beam LU6 from slow to fast the time, laser energy parameter U31 can be set at identical with U32.In another preferred embodiment, when the sweep speed of the first laser beam LU5 or the second laser beam LU6 fixedly the time, the design pulse frequency f51 among laser energy parameter U31 and the U32 and f61 can be set at and equate or unequal.
Machining cell 57 response one control signal A3 and provide the first laser beam LU5 and the second laser beam LU6 to form separately first site 521 and second site 522.Control module 56 is provided with the first machined parameters B31 according to primary importance PS51, second place PS52, according to the 3rd position PS61, the 4th position PS62 the second machined parameters B32 is set, and produces control signal A3 according to the first machined parameters B31 and the second machined parameters B32.Control signal A3 comprises that laser energy control signal S5 and moves control signal S6.Laser energy control signal S5 comprises an accurate signal S51 and a pulse signal S52.Move control signal S6 and predetermined primary importance P51, predetermined second place P52, predetermined the 3rd position P61, to be scheduled to the 4th position P62 relevant, and comprise a Position Control signal S61 and a Position Control signal S62 and speed control signal S63, speed control signal S63 can control the sweep speed of the first laser beam LU5 or the second laser beam LU6.
See also Fig. 3 b, it is the flow chart of the present invention's second preferred embodiment laser processing.In step S301, a workpiece is provided, this workpiece has one first regional area.In step S302, apply one first laser beam LU5 to this first local region R G3, to form one first site 521 in this first local region R G3, wherein a plurality of laser pulses of this first laser beam LU5 have one first specific Duplication distribution so that this first site 521 has certain depth distribution in this first local region R G3.This workpiece for example is a substrate 52, or is die, die and LGP one of them.In the present invention's second preferred embodiment, for example, the energy that the first laser beam LU5 or the second laser beam LU6 per second are exported is fixed, and vertical with the planar S F2 of this workpiece.
A plurality of laser pulses of this second laser beam LU6 have one second specific Duplication and distribute.When the first laser beam LU5 and the second laser beam LU6 add man-hour successively, then the step of Laser Processing is as follows: apply this first laser beam LU5 in this primary importance PS51.Move this first laser beam LU5 to this second place PS52, wherein this first laser beam LU5 this first specific Duplication of being applied to this first local region R G3 distribute system by closely to sparse.Stop this first laser beam LU5, to form this first site 521.Apply one second laser beam LU6 in the 3rd position PS61.Move this second laser beam LU6 to the 4th position PS62, wherein this second laser beam LU6 this second specific Duplication of being applied to this second local region R G4 distribute system by closely to sparse.Stop this second laser beam LU6, to form one second site 522.
See also Fig. 3 c, it is the schematic diagram in the present invention first site 521 and 522 vertical sections, second site.In a preferred embodiment, first site 521 is identical with the shape of second site 522 from the vertical section, and for each site, with respect to the position that the extreme value degree of depth is arranged, the both sides right and wrong in vertical section are symmetric, this first local region R G3 comprises a high Duplication distributed areas RG31 and a low Duplication distributed areas RG32, and this second local region R G4 comprises a high Duplication distributed areas RG41 and a low Duplication distributed areas RG42.For example, this first specific Duplication distributes and comprises one first pulse overlap rate LPD1, LPD3 and one second pulse overlap rate LPD2, LPD4.Shown in Fig. 3 c, this first laser beam LU5 processes in this high Duplication distributed areas RG31 with this first pulse overlap rate LPD1, and LPD2 processes in this low Duplication distributed areas RG32 with this second pulse overlap rate, and wherein this first pulse overlap rate LPD1 is greater than this second pulse overlap rate LPD2.The first pulse overlap rate LPD1 of the first laser beam LU5 formed laser pulse LP1 in high Duplication distributed areas RG31 is greater than the second pulse overlap rate LPD2 of formed laser pulse LP2 in low Duplication distributed areas RG32, and the first pulse overlap rate LPD3 of the second laser beam LU6 formed laser pulse LP3 in high Duplication distributed areas RG41 is greater than the second pulse overlap rate LPD4 of formed laser pulse LP4 in low Duplication distributed areas RG42.
This first laser beam LU5 causes this certain depth distribution to have one second depth capacity in high Duplication distributed areas RG31, and cause this certain depth to distribute in this low Duplication distributed areas RG32 and have one the 3rd depth D A51, wherein this second depth capacity is greater than the 3rd depth D A51.The first depth D A5 equals second depth capacity that this first laser beam LU5 is caused at high Duplication distributed areas RG31.The degree of depth that the depth capacity that this second laser beam LU6 is caused at high Duplication distributed areas RG41 is caused greater than this low Duplication distributed areas RG42, wherein the second depth D A6 equals the depth capacity that this second laser beam LU6 is caused at high Duplication distributed areas RG41.In another preferred embodiment, the shape of first site 521 and second site 522 can be inequality and right and wrong are symmetric from the vertical section, decides according to the demand of site design.
In another preferred embodiment, utilize the laser processing of second preferred embodiment, this workpiece is more processed and have at least one the 3rd site, and the vertical section of this at least one the 3rd site is symmetrical.
See also Fig. 3 d, the schematic diagram that it is overlooked for LGP 59 of the present invention.LGP 59 comprises first site 521, second site 522 and site 523,524,525 at least.Please also refer to Fig. 3 a and Fig. 3 d, the relativeness of primary importance PS51 and second place PS52 can be changed arbitrarily, the relativeness of primary importance PS61 and second place PS62 also can be changed arbitrarily, that is primary importance PS51, PS61 points to second place PS52, the direction of PS62 can be changed arbitrarily, the direction that primary importance PS51 points to second place PS52 and the direction of primary importance PS61 sensing second place PS62 can be equidirectional (for example sensing DIR of first site 521 and second site 522) or different directions, and (for example the site 523,524,525 sensing DIR), this can design according to the result of optics emulation, or can do suitable correction according to the result that reality measures the light uniformity of LGP 59.
In the present invention's second preferred embodiment, the concrete data for example maximum radius of this first local region R G3 and this second local region R G4 are 50 microns.Second depth capacity of this first local region R G3 and this second local region R G4 is 5 microns.Distance between this first local region R G3 and this second local region R G4 is not less than the maximum radius of this first local region R G3 or the maximum radius of this second local region R G4, and be 1 millisecond average time that wherein forms this first site 521 or this second site 522.
See also Fig. 4 a, it is the schematic diagram of the present invention's the 3rd preferred embodiment laser-processing system 60.Different is when applying laser beam on not same site the time, and the power of laser is inequality.Laser-processing system 60 comprises a laser processing device 61 and a substrate 62.This laser processing device 61 comprises a platform unit 63, a light beam scanning unit 64, a laser module 65 and a control module 66.In Fig. 4 a, a machining cell 67 comprises a laser module 65 and locating unit 68.This positioning unit 68 comprises a light beam scanning unit 64 and a platform unit 63.This substrate 62 comprises one first local region R G5.For example, this substrate 62 more comprises at least one second local region R G6.
Control module 66 is provided with the first machined parameters B41 and the second machined parameters B42 according to the first local region R G5 and the second local region R G6 separately, and provides the first laser beam LU7 and the second laser beam LU8 to form first site 621 and second site 622 separately according to the first machined parameters B41, the second machined parameters B42 separately.The first machined parameters B41 comprises a desired depth D71, a laser energy parameter U41, a predetermined sweep speed distribution SD7, a predetermined primary importance P71 and a predetermined second place P72, and predetermined sweep speed distribution SD7 comprises a predetermined low-velocity scanning speed SD71 and a predetermined high-speed scanning velocity SD72.The second machined parameters B42 comprises a desired depth D81, a laser energy parameter U42, a predetermined sweep speed distribution SD8, a predetermined primary importance P81 and a predetermined second place P82, and predetermined sweep speed distribution SD8 comprises a predetermined low-velocity scanning speed SD81 and a predetermined high-speed scanning velocity SD82.First site 621 has a depth D A7, and second site 622 has a depth D A8.The laser energy parameter U42 of the laser energy parameter U41 of the first machined parameters B41 and the second machined parameters B42 is configured to inequivalence.Laser energy parameter U41 comprises a design power R71, a design pulse frequency f71 and design Q71 process time.Laser energy parameter U42 comprises a design power R81, a design pulse frequency f81 and design Q81 process time.
In a preferred embodiment, after the first laser beam LU7 formed first site 621, the second laser beam LU8 formed second site 622 then.In another preferred embodiment, the first laser beam LU7 and the second laser beam LU8 can form first site 621 and second site 622 simultaneously respectively.In a preferred embodiment, design power R71 and the R81 of the first laser beam LU7 and the second laser beam LU8 set for unequal.
Machining cell 67 response one control signal A4 and provide the first laser beam LU7 and the second laser beam LU8 to form separately first site 621 and second site 622.Control module 66 is provided with the first machined parameters B41 according to primary importance PS71, second place PS72, according to the 3rd position PS81, the 4th position PS82 the second machined parameters B42 is set, and produces control signal A4 according to the first machined parameters B41 and the second machined parameters B42.Control signal A4 comprises that laser energy control signal S7 and moves control signal S8.Laser energy control signal S7 comprises an accurate signal S71 and a pulse signal S72.Move control signal S8 and predetermined primary importance P71, predetermined second place P72, predetermined the 3rd position P81, to be scheduled to the 4th position P82 relevant, and comprise a Position Control signal S81 and a Position Control signal S82 and speed control signal S83, speed control signal S83 can control the sweep speed of the first laser beam LU7 or the second laser beam LU8.
See also Fig. 4 b, it is the flow chart of the present invention's the 3rd preferred embodiment laser processing.In step S401, a workpiece is provided, this workpiece has one first local region R G5.In step S402, apply one first laser beam LU7 to this first local region R G5, in this first local region R G5, to form one first site 621, wherein this first laser beam LU7 has one first particular energy and one first specific sweep speed distribution in this first local region R G5, so that this first site 621 has one first aperture respectively and one first certain depth distributes.This workpiece for example is a substrate 62, or is die, die and LGP one of them.In the present invention's the 3rd preferred embodiment, for example, the energy that the first laser beam LU7 or the second laser beam LU8 per second are exported is different, and vertical with the planar S F3 of workpiece, is different in that is to say laser power R71 and R81 being during a processing.
See also Fig. 4 c, the schematic diagram in the hole that it varies in size for the present invention's the 3rd preferred embodiment.When the first laser beam LU7 adds man-hour with laser power R71 at primary importance PS71, on substrate 62, form hole H1 with this first aperture HS1.LU8 adds man-hour with laser power R81 at the 3rd position PS81 when this second laser beam, forms the hole H2 with this second aperture HS2 on substrate 62.In the 3rd preferred embodiment, laser power R71 is greater than laser power R81, and therefore the first aperture HS1 can be greater than the second aperture HS2, and the degree of depth extreme value of hole H1 also can be greater than the degree of depth extreme value of hole H2.
This second laser beam LU8 has one second particular energy in this second local region R G6 and one second specific sweep speed distributes.When the first laser beam LU7 and the second laser beam LU8 add man-hour successively, then the step of Laser Processing is as follows: apply this first laser beam LU7 has this first aperture HS1 with formation in this primary importance PS71 hole H1.Move this first laser beam LU7 to this second place PS72, wherein the energy that applied of this first laser beam LU7 is this first particular energy, and this first laser beam LU7 is to move to second place PS72 to fast speed from primary importance PS71 slowly.Stop this first laser beam LU7, to form one first site 621.Apply the second laser beam LU8 has one second aperture HS2 with formation in the 3rd position PS81 hole H2.Move this second laser light LU8 bundle to the 4th position PS82, wherein the energy that applied of this second laser beam LU8 is one second particular energy, and this second laser beam LU8 is to move to the 4th position PS82 to fast speed from the 3rd position PS81 slowly.Stop this second laser beam LU8, to form one second site PS622.
See also Fig. 4 d, it is the schematic diagram in the present invention first site 621 and 622 vertical sections, second site.In a preferred embodiment, the shape of first site 621 and second site 622 is inequality from the vertical section, and for each site, position with respect to the extreme value degree of depth, the both sides right and wrong in vertical section are symmetric, this first local region R G5 comprises a high energy distribution region R G51 and a low energy distribution region R G52, and this second local region R G6 comprises a high energy distribution region R G61 and a low energy distribution region R G62.
Shown in Fig. 4 d, this first laser beam LU7 processes this first site 621 with this first particular energy, and process at this high energy distribution region R G51 with a predetermined low speed SD71 that sketches, and in this low energy distribution region R G52, process with a predetermined high-velocity scanning speed SD72.This second laser beam LU8 processes this second site 622 with this second particular energy, and process at this high energy distribution region R G61 with a predetermined low speed SD81 that sketches, and in this low energy distribution region R G62, process with a predetermined high-velocity scanning speed SD72.This first laser beam LU7 causes this certain depth distribution to have one the 3rd depth capacity in high energy distribution region R G51, and cause this certain depth to distribute in this low energy distribution region R G62 and have one the 3rd depth D A71, wherein the 3rd depth capacity is greater than the 3rd depth D A71.The first depth D A7 equals the 3rd depth capacity that this first laser beam LU7 is caused at high energy distribution region R G61, the degree of depth that the depth capacity DA8 that this second laser beam LU8 is caused at high energy distribution region R G61 is caused greater than this low energy distribution region R G62.From Fig. 4 d as can be known, the first depth D A7 is greater than the second depth D A8, and the first aperture HS1 is also greater than the second aperture HS2.In another preferred embodiment, the shape of first site 621 and second site 622 can be inequality and right and wrong are symmetric from the vertical section, decides according to the demand of site design.
In another preferred embodiment, utilize the laser processing of the 3rd preferred embodiment, this workpiece is more processed and have at least one the 3rd site, and the vertical section of this at least one the 3rd site is symmetrical.
See also Fig. 4 e, the schematic diagram that it is overlooked for LGP 68 of the present invention.LGP 68 comprises first site 621, second site 622 and site 623,624,625 at least.Please also refer to Fig. 4 a and Fig. 4 e, the relativeness of primary importance PS71 and second place PS72 can be changed arbitrarily, the relativeness of primary importance PS81 and second place PS82 also can be changed arbitrarily, that is primary importance PS71, PS81 points to second place PS72, the direction of PS82 can be changed arbitrarily, the direction that primary importance PS71 points to second place PS72 and the direction of primary importance PS71 sensing second place PS82 can be equidirectional (for example sensing DIR of first site 621 and second site 622) or different directions, and (for example the site 623,624,625 sensing DIR), this can design according to the result of optics emulation, or can do suitable correction according to the result that reality measures the light uniformity of LGP 68.
See also Fig. 5 a, it is the flow chart of laser processing of the present invention.In step S501, a workpiece is provided, this workpiece has a zone for forming one first site.In step S502, one first laser beam is provided, it has a specific change pattern.In step S503, make this first laser beam on this workpiece, form this first site, so that having a particular characteristics, this zone distributes.
This specific change pattern shown in the present invention first, second and the 3rd embodiment, it comprise that a specific sweep speed of this first laser beam distributes, a specific Duplication distributes and a particular energy at least one of them.This particular characteristics distributes and comprises that a certain depth distributes and a specific Duplication distributes.
For example, this specific change pattern comprise one first pattern, one second pattern and a three-mode at least one of them.This first laser beam is applied to this zone to form this first site in a specific period, distribute so that this zone has this particular characteristics.This specific period comprise one first sub-period, one second sub-period and one the 3rd sub-period at least one of them.This first laser beam comprise one first beamlet, one second beamlet and one the 3rd beamlet at least one of them, wherein this first beamlet, this second beamlet and the 3rd beamlet are corresponding with this first sub-period, this second sub-period and the 3rd sub-period respectively.Utilize the method for this first preferred embodiment, this first beamlet is formed.Utilize the method for this second preferred embodiment, this second beamlet is formed.Utilize the method for the 3rd preferred embodiment, the 3rd beamlet is formed.For example, this specific Duplication distribution table is shown in and only has this first site in this zone.For example, to distribute be one of them of symmetrical depth profile and asymmetric depth profile for this certain depth.
For example, when this specific change pattern only had this first pattern, this specific change pattern was as described in first embodiment.The specific sweep speed of this first laser beam LU3 distributes and controls by speed control signal S43, so that this first laser beam LU3 processes in this low-velocity scanning region R G11 with this first sweep speed, and process in this high-velocity scanning region R G12 with this second sweep speed, wherein this second sweep speed is greater than this first sweep speed.The degree of depth that the depth capacity that this first laser beam LU3 for example caused at this low-velocity scanning region R G11 of distributing this particular characteristics is caused at this high-velocity scanning region R G12 greater than this first laser beam LU3.
For example, when this specific change pattern only had this second pattern, this specific change pattern was as described in a second embodiment.The specific Duplication of this first laser beam LU5 distributes and comprises this first pulse overlap rate LPD1, LPD3 and this second pulse overlap rate LPD2, LPD4, this first laser beam LU5 processes in this high Duplication distributed areas RG31 with this first pulse overlap rate LPD1, and processes in this low Duplication distributed areas RG32 with this second pulse overlap rate LPD2.This particular characteristics for example distributes this first pulse overlap rate LPD1 greater than this second pulse overlap rate LPD2, and the degree of depth that caused in low Duplication distributed areas RG32 greater than this first laser beam LU5 of the depth capacity that caused in high Duplication distributed areas RG31 of this first laser beam LU5.
For example, when this specific change pattern only had this three-mode, this specific change pattern was as described in the 3rd embodiment.This first laser beam LU7 processes this first site 621 with this first particular energy, and process in this high energy distribution region R G51 with a predetermined low speed SD71 that sketches, and in this low energy distribution region R G52, process with a predetermined high-velocity scanning speed SD72.The degree of depth that the depth capacity that this first laser beam LU7 for example caused in high energy distribution region R G51 of distributing this particular characteristics is caused in low energy distribution region R G52 greater than this first laser beam LU7.
See also Fig. 5 b, it is through the formed Laser Processing part 70 of laser processing of the present invention.In one embodiment, Laser Processing part 70 comprises a site 71, is formed on this Laser Processing part 70 and has a zone 72, a first surface 73 and a second surface 74.First surface 73 is formed on this zone 72, second surface 74 is formed on this zone 72, wherein the average surface curvature of this first surface 73 is greater than the average surface curvature of this second surface 74, different average surface curvature can cause one of them of leaded light directive property that has asymmetric leaded light directive property and symmetry in this zone 72, various optionally site to be provided and to increase site elasticity in design.
In one embodiment, this Laser Processing part 70 more comprises a plurality of sites, for example in Fig. 2 c, site 421 is in the average surface curvature of the first surface 4211 average surface curvature greater than second surface 4212, and site 422 is in the average surface curvature of the first surface 4221 average surface curvature greater than second surface 4222.Similarly, in Fig. 3 c, site 521 is in the average surface curvature of the first surface 5211 average surface curvature greater than second surface 5212, and site 522 is in the average surface curvature of the first surface 5221 average surface curvature greater than second surface 5222.In Fig. 4 c, site 621 is in the average surface curvature of the first surface 6211 average surface curvature greater than second surface 6212, and site 622 is in the average surface curvature of the first surface 6221 average surface curvature greater than second surface 6222.
Embodiment
1. laser processing, it comprises the following step: a workpiece is provided, and this workpiece has one first regional area.Apply one first laser beam to this first regional area, to form one first site in this first regional area, wherein this first laser beam has a specific sweep speed distribution so that this first site has certain depth distribution in this first regional area.
2. as embodiment 1 described method, wherein this first regional area comprises a primary importance and a second place, this workpiece has more one second regional area, this second regional area comprises one the 3rd position and one the 4th position, and this method more comprises the following step: apply this first laser beam in this primary importance.Move this first laser beam from slow to fast to this second place.Stop this first laser beam, to form this first site.Apply one second laser beam in the 3rd position.Move this second laser beam from slow to fast to the 4th position.Stop this second laser beam, to form one second site.
3. as embodiment 1～2 described method, wherein this workpiece is one of them of die, die and LGP.This certain depth distribution is one of them of symmetrical depth profile and asymmetric depth profile.This first regional area comprises a low-velocity scanning zone and a high-velocity scanning zone.This specific sweep speed distributes and comprises one first sweep speed and one second sweep speed.This first laser beam with this first sweep speed in the processing of this low-velocity scanning zone, and with this second sweep speed in this height zone of sketching, wherein this second sweep speed is greater than this first sweep speed.This first laser beam causes this certain depth distribution to have one first depth capacity in this low-velocity scanning zone, and causes this certain depth distribution to have one first degree of depth in this high-velocity scanning zone, and wherein this first depth capacity is greater than this first degree of depth.The energy that this laser beam per second is exported is fixed.This laser beam is vertical with a plane of this workpiece.
4. laser processing, it comprises the following step: a workpiece is provided, and this workpiece has one first regional area.Apply one first laser beam to this first regional area, to form one first site in this first regional area, wherein a plurality of laser pulses of this first laser beam have one first specific Duplication distribution so that this first site has certain depth distribution in this first regional area.
5. as embodiment 4 described methods, wherein this first regional area comprises a primary importance and a second place, this workpiece has more one second regional area, this second regional area comprises one the 3rd position and one the 4th position, and this method more comprises the following step: apply this first laser beam in this primary importance.Move this first laser beam to this second place, wherein this first laser beam this first specific Duplication of being applied to this first regional area distribute system by closely to sparse.Stop this first laser beam, to form this first site.Apply one second laser beam in the 3rd position.Move this second laser beam to the 4th position, wherein this second laser beam one second specific Duplication of being applied to this second regional area distribute system by closely to sparse.Stop this second laser beam, to form one second site.
6. as embodiment 4～5 described methods, wherein this workpiece is one of them of die, die and LGP.This certain depth distribution is one of them of symmetrical depth profile and asymmetric depth profile.This first regional area comprises high Duplication distributed areas and low Duplication distributed areas, and this first specific Duplication distributes and comprises one first pulse overlap rate and one second pulse overlap rate.This first laser beam is processed in these high Duplication distributed areas with this first pulse overlap rate, and processes in these low Duplication distributed areas with this second pulse overlap rate, and wherein this first pulse overlap rate is greater than this second pulse overlap rate.This first laser beam causes this certain depth distribution to have one first depth capacity in high Duplication distributed areas, and cause this certain depth to distribute in these low Duplication distributed areas and have one first degree of depth, wherein this first depth capacity is greater than this first degree of depth.The energy that this laser beam per second is exported is fixed.This laser beam is vertical with a plane of this workpiece.
7. as embodiment 4～6 described methods, wherein the maximum radius of this first regional area and this second regional area is 50 microns.The depth capacity of this first regional area and this second regional area is 5 microns.Distance between this first regional area and this second regional area is not less than the maximum radius of this first regional area or the maximum radius of this second regional area.Be 1 millisecond average time that forms this first site or this second site.
8. laser processing, it comprises the following step: a workpiece is provided, and this workpiece has one first regional area.Apply one first laser beam to this first regional area, in this first regional area, to form one first site, wherein this first laser beam has one first particular energy and one first specific sweep speed distribution in this first regional area, so that this first site has one first aperture respectively and one first certain depth distributes.
9. as embodiment 8 described methods, wherein this first regional area comprises a primary importance and a second place, this workpiece has more one second regional area, this second regional area comprises one the 3rd position and one the 4th position, and this method more comprises the following step: apply this first laser beam has this first aperture with formation in this primary importance hole.Move this first laser beam to this second place, wherein the energy that applied of this first laser beam is one first particular energy, and this first laser beam is to move to this second place to fast speed from this primary importance slowly.Stop this first laser beam, to form one first site.Apply one second laser beam has one second aperture with formation in the 3rd position hole.Move this second laser beam to the 4th position, wherein the energy that applied of this second laser beam is one second particular energy, and this second laser beam is to move to the 4th position to fast speed from the 3rd position slowly.Stop this second laser beam, to form one second site.
10. as embodiment 8～9 described methods, wherein this workpiece is one of them of die, die and LGP.This certain depth distribution is one of them of symmetrical depth profile and asymmetric depth profile.This first regional area comprises a high energy distribution zone and a low energy distribution zone, and wherein this first particular energy is different with this second particular energy.This first laser beam causes this certain depth distribution to have one first depth capacity in this high energy distribution zone, and causes this certain depth distribution to have one first degree of depth in this low energy distribution zone, and wherein this first depth capacity is greater than this first degree of depth.The energy that this laser beam per second is exported is variable.This laser beam is vertical with a plane of this workpiece.
11. a laser processing, it comprises the following step: a workpiece is provided, and this workpiece has a zone for forming one first site.One first laser beam is provided, and it has a specific change pattern.Make this first laser beam on this workpiece, form this first site, distribute so that this zone has a particular characteristics.
12. as embodiment 11 described methods, wherein this specific change pattern comprise that a specific sweep speed of this first laser beam distributes, a specific Duplication distributes and a particular energy distributes at least one of them.This particular characteristics distributes and comprises that a certain depth distributes and a specific Duplication distributes.This certain depth distribution is one of them of symmetrical depth profile and asymmetric depth profile.
13. a Laser Processing part, it comprises a site, and this site is formed on this Laser Processing part and has a zone, a first surface and a second surface.This first surface is formed on this zone.This second surface is formed on this zone, and wherein the average surface curvature of this first surface is greater than the average surface curvature of this second surface.
14. as embodiment 13 described Laser Processing parts, wherein this zone has asymmetric leaded light directive property.
In sum, explanation of the present invention and embodiment describe in detail, but it is not to be used for limiting the present invention; all those of ordinary skill in the art; not breaking away under spirit of the present invention and the scope, should do various variations and modification, it should still belong within the protection domain of patent of the present invention.
Claims (13)
1. a laser processing is characterized in that, comprises the following step:
One workpiece is provided, and this workpiece has one first regional area; And
Apply one first laser beam to this first regional area, to form one first site in this first regional area, wherein this first laser beam has a specific sweep speed distribution so that this first site has certain depth distribution in this first regional area.
2. the method for claim 1, it is characterized in that this first regional area comprises a primary importance and a second place, this workpiece has more one second regional area, this second regional area comprises one the 3rd position and one the 4th position, and this method more comprises the following step:
Apply this first laser beam in this primary importance;
Move this first laser beam from slow to fast to this second place;
Stop this first laser beam, to form this first site;
Apply one second laser beam in the 3rd position;
Move this second laser beam from slow to fast to the 4th position; And
Stop this second laser beam, to form one second site.
3. the method for claim 1 is characterized in that, wherein:
This workpiece is one of them of die, die and LGP;
This certain depth distribution is one of them of symmetrical depth profile and asymmetric depth profile;
This first regional area comprises a low-velocity scanning zone and a high-velocity scanning zone, and this specific sweep speed distributes and comprises one first sweep speed and one second sweep speed;
This first laser beam is processed in this low-velocity scanning zone with this first sweep speed, and processes in this high-velocity scanning zone with this second sweep speed, and wherein this second sweep speed is greater than this first sweep speed;
This first laser beam causes this certain depth distribution to have one first depth capacity in this low-velocity scanning zone, and causes this certain depth distribution to have one first degree of depth in this high-velocity scanning zone, and wherein this first depth capacity is greater than this first degree of depth;
The energy that this laser beam per second is exported is fixed; And
This laser beam is vertical with a plane of this workpiece.
4. a laser processing is characterized in that, comprises the following step:
One workpiece is provided, and this workpiece has one first regional area; And
Apply one first laser beam to this first regional area, to form one first site in this first regional area, wherein a plurality of laser pulses of this first laser beam have one first specific Duplication distribution so that this first site has certain depth distribution in this first regional area.
5. method as claimed in claim 4, it is characterized in that this first regional area comprises a primary importance and a second place, this workpiece has more one second regional area, this second regional area comprises one the 3rd position and one the 4th position, and this method more comprises the following step:
Apply this first laser beam in this primary importance;
Move this first laser beam to this second place, wherein this first laser beam this first specific Duplication of being applied to this first regional area distribute system by closely to sparse;
Stop this first laser beam, to form this first site;
Apply one second laser beam in the 3rd position;
Move this second laser beam to the 4th position, wherein this second laser beam one second specific Duplication of being applied to this second regional area distribute system by closely to sparse; And
Stop this second laser beam, to form one second site.
6. method as claimed in claim 4 is characterized in that, wherein:
This workpiece is one of them of die, die and LGP;
This certain depth distribution is one of them of symmetrical depth profile and asymmetric depth profile;
This first regional area comprises high Duplication distributed areas and low Duplication distributed areas, and this first specific Duplication distributes and comprises one first pulse overlap rate and one second pulse overlap rate;
This first laser beam is processed in these high Duplication distributed areas with this first pulse overlap rate, and processes in these low Duplication distributed areas with this second pulse overlap rate, and wherein this first pulse overlap rate is greater than this second pulse overlap rate;
This first laser beam causes this certain depth distribution to have one first depth capacity in high Duplication distributed areas, and cause this certain depth to distribute in these low Duplication distributed areas and have one first degree of depth, wherein this first depth capacity is greater than this first degree of depth;
The energy that this laser beam per second is exported is fixed; And
This laser beam is vertical with a plane of this workpiece.
7. a laser processing is characterized in that, comprises the following step:
One workpiece is provided, and this workpiece has one first regional area; And
Apply one first laser beam to this first regional area, in this first regional area, to form one first site, wherein this first laser beam has one first particular energy and a specific sweep speed distribution in this first regional area, so that this first site has one first aperture respectively and one first certain depth distributes.
8. method as claimed in claim 7, it is characterized in that this first regional area comprises a primary importance and a second place, this workpiece has more one second regional area, this second regional area comprises one the 3rd position and one the 4th position, and this method more comprises the following step:
Apply this first laser beam has this first aperture with formation in this primary importance hole;
Move this first laser beam to this second place, wherein the energy that this first laser beam applied is this first particular energy, and this first laser beam is to move to this second place slowly to fast speed from this primary importance;
Stop this first laser beam, to form one first site;
Apply one second laser beam has one second aperture with formation in the 3rd position hole;
Move this second laser beam to the 4th position, wherein the energy that applied of this second laser beam is one second particular energy, and this second laser beam is to move to the 4th position to fast speed from the 3rd position slowly; And
Stop this second laser beam, to form one second site.
9. method as claimed in claim 7 is characterized in that, wherein:
This workpiece is one of them of die, die and LGP;
This certain depth distribution is one of them of symmetrical depth profile and asymmetric depth profile;
This first regional area comprises a high energy distribution zone and a low energy distribution zone, and wherein this first particular energy is different with this second particular energy;
This first laser beam causes this certain depth distribution to have one first depth capacity in this high energy distribution zone, and causes this certain depth distribution to have one first degree of depth in this low energy distribution zone, and wherein this first depth capacity is greater than this first degree of depth; And
This laser beam is vertical with a plane of this workpiece.
10. a laser processing is characterized in that, comprises the following step:
One workpiece is provided, and this workpiece has a zone for forming one first site;
One first laser beam is provided, and it has a specific change pattern; And
Make this first laser beam on this workpiece, form this first site, distribute so that this zone has a particular characteristics.
11. method as claimed in claim 10 is characterized in that, wherein:
This specific change pattern comprise that a specific sweep speed of this first laser beam distributes, a specific Duplication distributes and a particular energy at least one of them;
This particular characteristics distributes and comprises that a certain depth distributes and a specific Duplication distributes; And
This certain depth distribution is one of them of symmetrical depth profile and asymmetric depth profile.
12. a Laser Processing part is characterized in that, comprises:
One site is formed on this Laser Processing part and has:
One zone;
One first surface is formed on this zone; And
One second surface is formed on this zone, and wherein the average surface curvature of this first surface is greater than the average surface curvature of this second surface.
13. Laser Processing part as claimed in claim 12 is characterized in that, this zone has one of them of leaded light directive property of asymmetric leaded light directive property and symmetry.
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Application publication date: 20130724 |