JP5478957B2 - Cleaving method of brittle material substrate - Google Patents
Cleaving method of brittle material substrate Download PDFInfo
- Publication number
- JP5478957B2 JP5478957B2 JP2009154573A JP2009154573A JP5478957B2 JP 5478957 B2 JP5478957 B2 JP 5478957B2 JP 2009154573 A JP2009154573 A JP 2009154573A JP 2009154573 A JP2009154573 A JP 2009154573A JP 5478957 B2 JP5478957 B2 JP 5478957B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cleaving
- cooling
- crack
- cutting line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
- C03B33/033—Apparatus for opening score lines in glass sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/08—Severing cooled glass by fusing, i.e. by melting through the glass
- C03B33/082—Severing cooled glass by fusing, i.e. by melting through the glass using a focussed radiation beam, e.g. laser
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/09—Severing cooled glass by thermal shock
- C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
Description
本発明は、脆性材料基板の割断方法に関し、より詳細にはレーザを用いた脆性材料基板の割断方法に関するものである。 The present invention relates to a method for cleaving a brittle material substrate, and more particularly to a method for cleaving a brittle material substrate using a laser.
従来、ガラス基板やセラミック基板等の脆性材料基板の割断方法としては、脆性材料基板の表面にカッターホイール等を圧接させながら転動させて、脆性材料基板の表面に対して略垂直方向の亀裂（以下、「垂直亀裂」という）を形成し、次いで、基板に対して垂直方向に機械的な押圧力を加えて、垂直亀裂を基板厚み方向に進展させて基板を割断する方法が広く行われていた。 Conventionally, as a method for cleaving a brittle material substrate such as a glass substrate or a ceramic substrate, the surface of the brittle material substrate is rolled while pressing a cutter wheel or the like, and cracks in a direction substantially perpendicular to the surface of the brittle material substrate ( (Hereinafter referred to as “vertical cracks”), and then a mechanical pressing force is applied to the substrate in the vertical direction to cause the vertical crack to propagate in the thickness direction of the substrate and to cleave the substrate. It was.
しかし、通常、カッターホイールを用いて脆性材料基板の垂直亀裂を形成した場合、カレットと呼ばれる小破片が発生し、このカレットによって脆性材料基板の表面にキズがつくことがあった。また、割断後の脆性材料基板の端部にはマイクロクラックが生じやすく、このマイクロクラックを起因として脆性材料基板の割れが発生することがあった。このため、通常は割断後に、脆性材料基板の端部を研磨・洗浄してマイクロクラックやカレット等を除去していた。 However, usually, when a vertical crack of a brittle material substrate is formed using a cutter wheel, small fragments called cullet are generated, and the cullet sometimes scratches the surface of the brittle material substrate. In addition, microcracks are easily generated at the edge of the brittle material substrate after cleaving, and the brittle material substrate may be cracked due to the microcracks. For this reason, usually, after cleaving, the edge of the brittle material substrate is polished and washed to remove microcracks, cullet and the like.
一方、近年、ＣＯ２レーザビームを用いて脆性材料基板を溶融温度未満に加熱し、これにより脆性材料基板に生じた熱応力によって、局所的に引張応力を発生させて垂直亀裂を形成することにより、脆性材料基板を割断する方法が近年種々検討・開発されている。このレーザビームを用いる割断方法は非接触加工であるため、上記したカレットやマイクロクラック等の潜在的欠陥の発生が抑えられる。 On the other hand, in recent years, by using a CO 2 laser beam to heat a brittle material substrate to below the melting temperature, a thermal stress generated in the brittle material substrate thereby locally generates a tensile stress to form a vertical crack. Various methods for cleaving a brittle material substrate have been studied and developed in recent years. Since the cleaving method using this laser beam is non-contact processing, the occurrence of potential defects such as cullet and microcracks can be suppressed.
ところが、このレーザビームを用いる割断方法では、図４（ａ）に示すように、割断予定線Ｌ１の終端（基板端部）近傍において垂直亀裂Ｌ２の進展が途絶えるという問題がある。割断予定線Ｌ１の終端に垂直亀裂が形成されていない状態で、基板Ｇに押圧力を加えて割断すると、同図（ｂ）に示すように、割断線の終端部分Ｌ３が割断予定線Ｌ１から外れ、充分な寸法精度が得られなくなる。このため、従来は、割断予定線Ｌ１の終端の、垂直亀裂Ｌ２が形成されなかった部分について、カッターホイールを圧接転動させて垂直亀裂を改めて形成する作業を必要とすることがあった。 However, in the cleaving method using this laser beam, there is a problem that the progress of the vertical crack L2 is interrupted near the terminal end (substrate end) of the cleaving line L1 as shown in FIG. If the substrate G is cleaved by applying a pressing force in a state where no vertical crack is formed at the end of the planned cutting line L1, as shown in FIG. 5B, the terminal portion L3 of the cutting line is separated from the planned cutting line L1. It will come off and sufficient dimensional accuracy will not be obtained. For this reason, conventionally, it has been necessary to perform a work of re-forming the vertical crack by pressing and rolling the cutter wheel at the end of the cutting line L1 where the vertical crack L2 is not formed.
そこで、例えば特許文献１では、割断予定線の始点に初期亀裂を形成した後、割断予定線の回りに曲げモーメントを加えながら局所加熱を与えて、割断予定線に沿って垂直亀裂を終端まで進行させる技術が提案されている。 Therefore, for example, in Patent Document 1, after forming an initial crack at the starting point of the planned cutting line, local heating is applied while applying a bending moment around the planned cutting line, and the vertical crack proceeds to the end along the planned cutting line. Techniques to make it have been proposed.
しかしながら、前記提案技術では、割断予定線の回りに正確に曲げモーメントを形成するためには、基板裏面の、割断予定線に対応する位置に正確に楔を配置しなければならず、厳密な作業が要求される。 However, in the proposed technique, in order to accurately form a bending moment around the planned cutting line, it is necessary to accurately place the wedge at the position corresponding to the planned cutting line on the back surface of the substrate. Is required.
本発明は、このような従来の問題に鑑みてなされたものであり、その目的は、レーザを用いた脆性材料基板の割断方法において、比較的簡単な作業で割断予定線の終端まで垂直亀裂を進展させることにある。 The present invention has been made in view of such a conventional problem, and its purpose is to cut a vertical crack to the end of a planned cutting line with a relatively simple operation in a method for cutting a brittle material substrate using a laser. It is to make progress.
前記目的を達成する本発明に係る脆性材料基板の割断方法は、脆性材料基板の一方面の、割断予定線の割断開始端に初期亀裂を形成する工程と、前記初期亀裂から前記割断予定線に沿ってレーザビームを相対移動させながら照射して、前記基板を溶融温度未満で加熱した直後に、冷却媒体によって冷却し、これにより前記基板に熱応力を生じさせて、前記割断予定線に沿って前記初期亀裂を進展させて、前記基板の裏面に達する垂直亀裂を形成する工程とを有する脆性材料基板の割断方法であって、前記レーザビームによる加熱条件及び冷却媒体による冷却条件の少なくとも一方を、前記割断予定線の終端近傍において前記基板に生じる熱応力が小さくなる方向に変化させ、加熱条件及び冷却条件の少なくとも一方を変化させた位置から前記割断予定線の終端まで前記基板の裏面に達しない垂直亀裂を形成することを特徴とする。 The brittle material substrate cleaving method according to the present invention that achieves the above object includes a step of forming an initial crack at a cleaving start line of a cleaving planned line on one side of the brittle material substrate, and from the initial crack to the cleaving planned line. Immediately after the substrate is heated at a temperature lower than the melting temperature, the substrate is cooled by a cooling medium, thereby generating a thermal stress on the substrate, and along the planned cutting line. A method of cleaving the brittle material substrate, the method comprising the step of developing the initial crack and forming a vertical crack reaching the back surface of the substrate, wherein at least one of a heating condition by the laser beam and a cooling condition by the cooling medium is used. wherein from the at the end near the expected splitting line is changed in the direction in which the thermal stress is reduced resulting in the substrate, a position of changing at least one of the heating conditions and cooling conditions And forming a vertical crack which does not reach the back surface of the substrate to the end of the cross-sectional plan line.
ここで、前記変化させる加熱条件としては、レーザビームの相対移動速度、照射スポット形状、照射出力のうちの少なくとも１つが好ましい。前記変化させる冷却条件としては、冷却媒体の吹付けスポット位置であるのが好ましい。Here, the heating condition to be changed is preferably at least one of the relative movement speed of the laser beam, the irradiation spot shape, and the irradiation output. The cooling condition to be changed is preferably a spray spot position of the cooling medium.
また、前記割断予定線の終端近傍において、レーザビームの相対移動速度を速くすると同時に、冷却媒体の吹付けスポット位置をレーザー照射スポットに近づけるのが好ましい。In addition, it is preferable that the relative movement speed of the laser beam is increased near the end of the planned cutting line, and at the same time the spray spot position of the cooling medium is brought closer to the laser irradiation spot.
また、脆性材料基板を確実に割断する観点からは、前記割断予定線に沿って前記初期亀裂を進展させた後、進展した亀裂の回りに曲げモーメントを加える工程をさらに設けてもよい。 In addition, from the viewpoint of reliably cleaving the brittle material substrate, a step of applying a bending moment around the developed crack may be further provided after the initial crack has propagated along the planned fracture line.
本発明の割断方法では、割断予定線の終端近傍において、レーザビームによる加熱条件及び冷却媒体による冷却条件の少なくとも一方を、割断予定線の終端近傍において基板に生じる熱応力が小さくなる方向に変化させ、加熱条件及び冷却条件の少なくとも一方を変化させた位置から前記割断予定線の終端まで前記基板の裏面に達しない垂直亀裂を形成するので、割断予定線の後端部分において端面品質が向上する。 In the cleaving method of the present invention, at least one of the heating condition by the laser beam and the cooling condition by the cooling medium is changed in the direction near the end of the planned cutting line so that the thermal stress generated on the substrate is reduced near the end of the planned cutting line. Since the vertical crack that does not reach the back surface of the substrate from the position where at least one of the heating condition and the cooling condition is changed to the end of the planned cutting line is formed, the end face quality is improved at the rear end portion of the planned cutting line.
前記変化させる加熱条件を、レーザビームの相対移動速度、照射スポット形状、波長、照射出力のうちの少なくとも１つとし、前記変化させる冷却条件を冷却媒体の吹付けスポット位置とすると、基板に生じる熱応力を制御しやすくなり、割断予定線に沿って進展させる垂直亀裂の深さを制御できるようになる。If the heating condition to be changed is at least one of the relative movement speed of the laser beam, the irradiation spot shape, the wavelength, and the irradiation output, and the cooling condition to be changed is the spray spot position of the cooling medium, the heat generated in the substrate It becomes easier to control the stress, and the depth of the vertical crack that propagates along the planned cutting line can be controlled.
前記割断予定線の終端近傍において、レーザビームの相対移動速度を速くすると同時に、冷却媒体の吹付けスポット位置をレーザー照射スポットに近づけるようにすると、垂直亀裂の深さをより確実に制御できるようになる。By increasing the relative movement speed of the laser beam in the vicinity of the end of the planned cutting line and simultaneously bringing the spray spot position of the cooling medium closer to the laser irradiation spot, the depth of the vertical crack can be controlled more reliably. Become.
また、前記割断予定線に沿って前記初期亀裂を進展させた後、進展した垂直亀裂の回りに曲げモーメントを加える工程をさらに設けると、脆性材料基板を確実に割断できるようになる。 In addition, if a step of applying a bending moment around the developed vertical crack after the initial crack is developed along the planned cutting line, the brittle material substrate can be reliably cut.
以下、本発明に係る脆性材料基板の割断方法についてより詳細に説明するが、本発明はこれらの実施形態に何ら限定されるものではない。 Hereinafter, although the cutting method of the brittle material substrate according to the present invention will be described in more detail, the present invention is not limited to these embodiments.
図１に、本発明の割断方法を実施可能な割断装置の一例を示す概説図を示す。図１の割断装置では、水平な架台１１上に、一対のガイドレール１３ａ，１３ｂが所定距離隔てて平行に設けられている。そして、この一対のガイドレール１３ａ，１３ｂ上を紙面垂直方向に移動するスライドテーブル１２が設けられている。スライドテーブル１２の下面から下方にステー１５が垂設されている。このステー１５に、ガイドレール１３ａ，１３ｂの間にガイドレール１３ａ，１３ｂと平行に配置されたスクリューネジ１４が螺合し、不図示のモータによってスクリューネジ１４が正・逆転することにより、スライドテーブル１２はガイドレール１３ａ、１３ｂに沿って移動する。 FIG. 1 is a schematic diagram showing an example of a cleaving apparatus that can implement the cleaving method of the present invention. In the cleaving apparatus of FIG. 1, a pair of guide rails 13 a and 13 b are provided in parallel at a predetermined distance on a horizontal base 11. A slide table 12 is provided that moves on the pair of guide rails 13a and 13b in a direction perpendicular to the paper surface. A stay 15 is vertically suspended from the lower surface of the slide table 12. A screw screw 14 disposed in parallel with the guide rails 13a and 13b is screwed into the stay 15 between the guide rails 13a and 13b, and the screw screw 14 is rotated forward / reversely by a motor (not shown). 12 moves along the guide rails 13a and 13b.
スライドテーブル１２の上には、ガラス基板Ｇを載置する保持台２が設けられている。保持台２は、一対のガイドレール１３ｃ（１３ｄ）に沿って図の左右方向に移動可能に配置された台座２１と、この台座２１上に設けられた回転機構２２と、回転テーブル２３とを有する。回転テーブル２３は、回転機構２２によって回転自在に設けられており、この上にガラス基板Ｇが不図示の真空吸引手段で固定される。 On the slide table 12, a holding table 2 on which the glass substrate G is placed is provided. The holding table 2 includes a pedestal 21 arranged to be movable in the left-right direction in the drawing along a pair of guide rails 13c (13d), a rotating mechanism 22 provided on the pedestal 21, and a rotating table 23. . The turntable 23 is rotatably provided by a rotation mechanism 22 on which a glass substrate G is fixed by a vacuum suction means (not shown).
保持台２の上方の取付フレーム５０には、レーザ照射手段３と、このレーザ照射手段３に近接して冷却手段４とが設けられている。レーザ照射手段３は、光学ホルダー３１とレーザー発振器３２とを有し、レーザー発振器３２から発信されたレーザービームが、光学ホルダー３１によって所定の方向へ伸びた長円形のレーザースポットとしてガラス基板上に照射される。 The mounting frame 50 above the holding table 2 is provided with the laser irradiation means 3 and the cooling means 4 in the vicinity of the laser irradiation means 3. The laser irradiation means 3 has an optical holder 31 and a laser oscillator 32, and a laser beam emitted from the laser oscillator 32 is irradiated onto the glass substrate as an oval laser spot extending in a predetermined direction by the optical holder 31. Is done.
冷却手段４は、ノズル４１と、ノズル４１を移動させるソレノイド４２とを有する。ノズル４１からは、水、Ｈｅガス，炭酸ガスなどの冷却媒体がガラス基板に向かって吹き付けられる。後述するように、ソレノイド４２によってノズル４１を移動させることによって、レーザビーム照射スポットと冷却スポットとの距離を変えることができる。 The cooling unit 4 includes a nozzle 41 and a solenoid 42 that moves the nozzle 41. From the nozzle 41, a cooling medium such as water, He gas, and carbon dioxide is sprayed toward the glass substrate. As will be described later, the distance between the laser beam irradiation spot and the cooling spot can be changed by moving the nozzle 41 by the solenoid 42.
なお、この図に示す割断装置では、レーザ照射手段３及び冷却手段４を固定し、保持台２と共にガラス基板Ｇを移動させているが、レーザ照射手段３及び冷却手段４を移動させて、ガラス基板Ｇを固定してもよいし、レーザ照射手段３及び冷却手段４と、ガラス基板Ｇとの双方を移動させてもよい。 In the cleaving apparatus shown in this figure, the laser irradiation means 3 and the cooling means 4 are fixed, and the glass substrate G is moved together with the holding base 2. However, the laser irradiation means 3 and the cooling means 4 are moved to move the glass substrate G. The substrate G may be fixed, or both the laser irradiation means 3 and the cooling means 4 and the glass substrate G may be moved.
このような構成の割断装置において、レーザ発振器３２の出力や照射スポット形状、ノズル４１からの冷却媒体の吹付け量、冷却スポット位置、モータ１７の回転速度などの制御はコンピュータ制御で行われている。この図では、制御手段の一例として、レーザ発振器の出力制御３３、冷却スポット位置の制御手段４３、モータ１７の回転速度制御手段１９を示した。 In the cleaving apparatus having such a configuration, control of the output of the laser oscillator 32, the irradiation spot shape, the amount of cooling medium sprayed from the nozzle 41, the cooling spot position, the rotational speed of the motor 17 and the like is performed by computer control. . In this figure, the output control 33 of the laser oscillator, the cooling spot position control means 43, and the rotation speed control means 19 of the motor 17 are shown as examples of the control means.
前記割断装置を用いてガラス基板を割断する場合の各工程について以下説明する。まず、ガラス基板Ｇを回転テーブル２３に載置し不図示の真空吸引手段で固定する。そして、光学ホルダー３１によるレーザ照射スポットＳ１（図２に図示）と、ノズル４１による冷却スポットＳ２（図２に図示）とが相対移動方向に対してこの順で、割断予定線Ｌ１（図２に図示）の線上に位置するように調整する。次いで、ガラス基板Ｇの、割断予定線Ｌ１の割断開始端に初期亀裂を形成する。 Each process in the case of cleaving a glass substrate using the said cleaving apparatus is demonstrated below. First, the glass substrate G is placed on the rotary table 23 and fixed by a vacuum suction means (not shown). Then, the laser irradiation spot S1 (shown in FIG. 2) by the optical holder 31 and the cooling spot S2 (shown in FIG. 2) by the nozzle 41 are arranged in this order with respect to the relative movement direction in the planned cutting line L1 (in FIG. 2). Adjust so that it is on the line (shown). Next, an initial crack is formed at the cutting start end of the cutting planned line L1 of the glass substrate G.
そして、レーザー発振器３２を起動させてガラス基板Ｇにレーザビームを照射するとともに、ノズル４１から冷却媒体を噴射させ、同時に、モータ１７を駆動させてスクリュ−ネジ１６を回転させ、保持台２を図１の左方向に移動させる。図２に示すように、これにより、レーザ照射スポットＳ１と冷却スポットＳ２とが、割断予定線Ｌ１に沿って相対移動する。レーザビームが照射されたレーザ照射スポットＳ１では、ガラス基板Ｇが加熱されて局部的な圧縮応力が生じ、冷却媒体が噴霧される冷却スポットＳ２では、ガラス基板Ｇが冷却されて局部的な引張応力が生じる。そして、形成された熱応力分布によって初期亀裂から割断予定線Ｌ１に沿って垂直亀裂Ｌ２が進展する。 Then, the laser oscillator 32 is activated to irradiate the glass substrate G with a laser beam, and a cooling medium is ejected from the nozzle 41. At the same time, the motor 17 is driven to rotate the screw 16 to rotate the holding table 2 as shown in FIG. Move to the left of 1. As shown in FIG. 2, this causes the laser irradiation spot S1 and the cooling spot S2 to move relative to each other along the planned cutting line L1. In the laser irradiation spot S1 irradiated with the laser beam, the glass substrate G is heated and a local compressive stress is generated. In the cooling spot S2 where the cooling medium is sprayed, the glass substrate G is cooled and the local tensile stress is applied. Occurs. Then, the vertical crack L2 develops along the planned cutting line L1 from the initial crack due to the formed thermal stress distribution.
進展する垂直亀裂Ｌ２の深さは、加熱条件及び冷却条件の少なくとも一方を変化させることにより制御される。本発明者等が行った実験結果の一例を示す。 The depth of the vertical crack L2 that progresses is controlled by changing at least one of the heating condition and the cooling condition. An example of the experimental results conducted by the present inventors will be shown.
厚さ０．７ｍｍの無アルカリガラス基板に対して、ＣＯ２レーザを用い、レーザビームの照射出力を１２０〜５００Ｗ、相対移動速度を１００ｍｍ／ｓｅｃ以下、レーザ照射スポットの長さを２０〜５０ｍｍ、幅を４〜６ｍｍとし、冷却媒体として水を用い、レーザ照射スポットから冷却スポットまでの距離を１０〜２０ｍｍとし、噴霧量を０．６〜１．５ｃｍ３／ｍｉｎとして、割断処理を行ったところ、前記ガラス基板に形成された垂直亀裂は、ガラス基板の裏面に達する亀裂であった。 For a non-alkali glass substrate having a thickness of 0.7 mm, a CO 2 laser is used, the laser beam irradiation output is 120 to 500 W, the relative movement speed is 100 mm / sec or less, the length of the laser irradiation spot is 20 to 50 mm, When the width is set to 4 to 6 mm, water is used as a cooling medium, the distance from the laser irradiation spot to the cooling spot is set to 10 to 20 mm, and the spray amount is set to 0.6 to 1.5 cm 3 / min. The vertical crack formed in the glass substrate was a crack reaching the back surface of the glass substrate.
他方、同じ厚さの無アルカリガラス基板に対して、ＣＯ２レーザを用い、レーザビームの照射出力を５０〜５００Ｗ、相対移動速度を５０〜１，０００ｍｍ／ｓｅｃ、レーザ照射スポットの長さを３０〜１００ｍｍ、幅を０．８〜４ｍｍとし、冷却媒体として水を用い、レーザ照射スポットから冷却スポットまでの距離を１０ｍｍ未満とし、噴霧量を０．６〜１．５ｃｍ３／ｍｉｎとして、割断処理を行ったところ、前記ガラス基板に形成された垂直亀裂は、ガラス基板の厚みに対して１０〜２０％程度の亀裂であった。 On the other hand, a CO 2 laser is used for an alkali-free glass substrate having the same thickness, the laser beam irradiation output is 50 to 500 W, the relative movement speed is 50 to 1,000 mm / sec, and the length of the laser irradiation spot is 30. Cleaving treatment with a width of 0.8 to 4 mm, water as a cooling medium, a distance from the laser irradiation spot to the cooling spot of less than 10 mm, and a spray amount of 0.6 to 1.5 cm 3 / min As a result, the vertical crack formed in the glass substrate was a crack of about 10 to 20% with respect to the thickness of the glass substrate.
ガラス基板Ｇの割断を効率的に行うには、割断予定線Ｌ１のすべてにわたって、基板の裏面に達する垂直亀裂を形成するのが最も望ましいが、従来のように、レーザによる加熱条件及び冷却媒体による冷却条件を固定して基板の割断を行うと、割断予定線Ｌ１の基板端部近傍において垂直亀裂の進展が途絶えるという現象が生じる。垂直亀裂の進展が途絶える位置は、基板の厚みや材質によっても異なるが、一般に終端から数ｍｍ〜十数ｍｍ程度である。 In order to efficiently cleave the glass substrate G, it is most desirable to form a vertical crack that reaches the back surface of the substrate over the entire planned breaking line L1, but as in the past, depending on the heating conditions by the laser and the cooling medium When the substrate is cleaved with the cooling condition fixed, a phenomenon occurs in which the progress of the vertical cracks stops in the vicinity of the substrate end portion of the cleaving line L1. The position at which the vertical cracks cease is different depending on the thickness and material of the substrate, but is generally about several mm to several tens of mm from the end.
そこで本発明では、垂直亀裂の進展が途絶える位置又はその手前において、加熱条件及び冷却条件の少なくとも一方を変化させて、垂直亀裂を途絶えることなく進展させるようにする。具体的には、図３（ａ）に示すように、前記のように加熱条件及び冷却条件を調整して、ガラス基板Ｇの裏面に達する垂直亀裂ＣＲ１を、割断予定線Ｌ１の開始端から進展させる。そして、割断予定線の終端から１０ｍｍ程度のところで、加熱条件及び冷却条件の少なくとも一方を、基板Ｇに生じる熱応力が小さくなる方向に変化させる。すると、形成される垂直亀裂は、ガラス基板Ｇの厚みに対して１０〜２０％程度の垂直亀裂ＣＲ２となるものの、途絶えることなく割断予定線Ｌ１の終端（基板端部）まで進展する。同図（ｂ）は、加熱条件及び／又は冷却条件を変化させる時点をより早くした場合であって、このような場合であっても、開始端から条件変更前まで垂直亀裂ＣＲ１が形成され、条件変更後は割断予定線の終端まで垂直亀裂ＣＲ２が進展する。通常、加熱条件及び冷却条件を同一条件として割断を行った場合の、垂直亀裂の進展が途切れる位置にはバラツキがあるので、加熱条件及び冷却条件を変化させる位置は、終端から２０ｍｍ以上手前の位置とするのが実使用上好ましい。 Therefore, in the present invention, at or before the position where the vertical crack progresses, at least one of the heating condition and the cooling condition is changed so that the vertical crack progresses without being interrupted. Specifically, as shown in FIG. 3A, the heating and cooling conditions are adjusted as described above, and the vertical crack CR1 reaching the back surface of the glass substrate G propagates from the start end of the planned cutting line L1. Let Then, at about 10 mm from the end of the planned cutting line, at least one of the heating condition and the cooling condition is changed in a direction in which the thermal stress generated in the substrate G is reduced. Then, although the vertical crack to be formed becomes a vertical crack CR2 of about 10 to 20% with respect to the thickness of the glass substrate G, it progresses to the end (substrate end) of the planned cutting line L1 without interruption. FIG. 5B shows a case where the time point for changing the heating condition and / or the cooling condition is made earlier. Even in such a case, the vertical crack CR1 is formed from the start end to before the condition change, After the condition change, the vertical crack CR2 develops to the end of the planned cutting line. Usually, there are variations in the position where vertical crack growth is interrupted when cleaving with the same heating and cooling conditions, so the position where the heating and cooling conditions are changed is a position 20 mm or more before the end. It is preferable for practical use.
前記変化させる加熱条件としては、レーザビームの相対移動速度、照射スポット形状、波長、照射出力のうちの少なくとも１つが好ましい。前記変化させる冷却条件としては、冷却媒体の吹付け量、吹付けスポット位置、冷媒温度のうちの少なくとも１つが好ましい。また、これらの条件において変化させる方向は、基板に生じる熱応力を小さくする方向が好ましい。 The heating condition to be changed is preferably at least one of the relative movement speed of the laser beam, the irradiation spot shape, the wavelength, and the irradiation output. The cooling condition to be changed is preferably at least one of a cooling medium spray amount, a spray spot position, and a refrigerant temperature. Further, the direction to be changed under these conditions is preferably a direction in which the thermal stress generated in the substrate is reduced.
図１に示す割断装置では、モータ１７の回転速度を変化させて、レーザ照射手段３及び冷却手段４の、ガラス基板Ｇに対する相対移動速度を変化させる。具体的には、前記の相対移動速度は、割断予定線の終端近傍において速くする。また同時に、レーザ照射スポットと冷却スポットとの距離を変化させる。具体的には、割断予定線の終端近傍において、ソレノイド４２に通電してノズル４１を光学ホルダー３１に近づける方向へ移動させる。その他、レーザ出力を下げる、あるいはレーザ照射スポットの形状を長く、又は幅を狭くしてより細長い長円形とすることによって、基板に生じる熱応力を小さくするようにしても構わない。 In the cleaving apparatus shown in FIG. 1, the rotational speed of the motor 17 is changed to change the relative movement speed of the laser irradiation means 3 and the cooling means 4 with respect to the glass substrate G. Specifically, the relative movement speed is increased in the vicinity of the end of the planned cutting line. At the same time, the distance between the laser irradiation spot and the cooling spot is changed. Specifically, in the vicinity of the end of the planned cutting line, the solenoid 42 is energized to move the nozzle 41 closer to the optical holder 31. In addition, the thermal stress generated in the substrate may be reduced by lowering the laser output, or by making the shape of the laser irradiation spot longer or narrower to make it a longer and narrower oval.
以上のようにして、割断予定線Ｌ１の終端まで垂直亀裂ＣＲ１，ＣＲ２を形成した後、基板Ｇに対して垂直方向に押圧力を加える。これにより、割断予定線Ｌ１の後端部分の基板裏面に達していない垂直亀裂ＣＲ２の回りに曲げモーメントを加え、垂直亀裂ＣＲ２を基板裏面側まで進展させる。もちろん、基板Ｇの自重等で垂直亀裂ＣＲ２が基板裏面側まで進展する場合は、上記押圧力を加える必要はない。 As described above, the vertical cracks CR1 and CR2 are formed up to the end of the planned cutting line L1, and then a pressing force is applied to the substrate G in the vertical direction. Accordingly, a bending moment is applied around the vertical crack CR2 that does not reach the back surface of the substrate at the rear end portion of the planned cutting line L1, and the vertical crack CR2 is propagated to the back surface side of the substrate. Of course, when the vertical crack CR2 propagates to the back side of the substrate due to its own weight or the like, it is not necessary to apply the pressing force.
本発明の割断方法では、割断予定線の終端まで垂直亀裂を進展させることができ、割断予定線の後端部分において端面品質が向上し有用である。 In the cleaving method of the present invention, the vertical crack can be propagated to the end of the planned cutting line, and the end face quality is improved at the rear end portion of the planned cutting line, which is useful.
３ レーザ照射手段
４ 冷却手段
Ｇ ガラス基板（脆性材料基板）
１９ モータ回転速度制御
３３ レーザ出力制御
４３ 冷却スポット位置制御
Ｌ１ 割断予定線
Ｌ２ 割断線
Ｓ１ レーザ照射スポット
Ｓ２ 冷却スポット
ＣＲ１ 垂直亀裂（基板厚み全体にわたる亀裂）
ＣＲ２ 垂直亀裂（基板厚みよりも浅い亀裂）
3 Laser irradiation means 4 Cooling means G Glass substrate (brittle material substrate)
19 Motor rotational speed control 33 Laser output control 43 Cooling spot position control L1 Scheduled cutting line L2 Splitting line S1 Laser irradiation spot S2 Cooling spot CR1 Vertical crack (crack over the entire substrate thickness)
CR2 vertical crack (crack shallower than the substrate thickness)
Claims (4)
前記レーザビームによる加熱条件及び冷却媒体による冷却条件の少なくとも一方を、前記割断予定線の終端近傍において前記基板に生じる熱応力が小さくなる方向に変化させ、加熱条件及び冷却条件の少なくとも一方を変化させた位置から前記割断予定線の終端まで前記基板の裏面に達しない垂直亀裂を形成することを特徴とする脆性材料基板の割断方法。 A step of forming an initial crack at a cleaving start end of a cleaving line on one side of a brittle material substrate, and a laser beam is irradiated from the initial crack while moving relatively along the cleaving line to melt the substrate Immediately after heating below the temperature, the substrate is cooled by a cooling medium, thereby generating thermal stress in the substrate, causing the initial crack to propagate along the planned cutting line, and causing the vertical crack to reach the back surface of the substrate. A method of cleaving a brittle material substrate having a step of forming,
At least one of the heating condition by the laser beam and the cooling condition by the cooling medium is changed in a direction in which the thermal stress generated in the substrate is reduced near the end of the planned cutting line, and at least one of the heating condition and the cooling condition is changed. A method of cleaving a brittle material substrate, comprising forming a vertical crack that does not reach the back surface of the substrate from a position where the cleaving line is to be terminated .
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009154573A JP5478957B2 (en) | 2009-06-30 | 2009-06-30 | Cleaving method of brittle material substrate |
| TW099118333A TWI383856B (en) | 2009-06-30 | 2010-06-07 | Method for cutting brittle material substrates |
| KR1020100059494A KR101200789B1 (en) | 2009-06-30 | 2010-06-23 | Method for dividing brittle material substrate |
| CN2010102196687A CN101934427B (en) | 2009-06-30 | 2010-06-29 | Method for cutting brittle material substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009154573A JP5478957B2 (en) | 2009-06-30 | 2009-06-30 | Cleaving method of brittle material substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011011340A JP2011011340A (en) | 2011-01-20 |
| JP5478957B2 true JP5478957B2 (en) | 2014-04-23 |
Family
ID=43388132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009154573A Expired - Fee Related JP5478957B2 (en) | 2009-06-30 | 2009-06-30 | Cleaving method of brittle material substrate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5478957B2 (en) |
| KR (1) | KR101200789B1 (en) |
| CN (1) | CN101934427B (en) |
| TW (1) | TWI383856B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5292420B2 (en) * | 2011-02-17 | 2013-09-18 | 三星ダイヤモンド工業株式会社 | Glass substrate scribing method |
| JP5271393B2 (en) * | 2011-07-20 | 2013-08-21 | 三星ダイヤモンド工業株式会社 | Laser scribing equipment |
| CN103732547B (en) * | 2011-08-18 | 2016-10-26 | 康宁股份有限公司 | The method cutting off glass tape |
| CN103212841B (en) * | 2012-01-19 | 2016-07-06 | 昆山思拓机器有限公司 | SMT template laser wet cutting and detection process equipment |
| CN103212835B (en) * | 2012-01-19 | 2016-07-06 | 昆山思拓机器有限公司 | SMT template laser wet cutting and detection method |
| WO2015190281A1 (en) * | 2014-06-11 | 2015-12-17 | 株式会社Ihi | Brittle substrate cleavage method and brittle substrate cleavage device |
| KR101641939B1 (en) * | 2014-07-14 | 2016-07-22 | 한국미쯔보시다이아몬드공업(주) | Apparatus and method for breaking substrate |
| WO2016125609A1 (en) * | 2015-02-03 | 2016-08-11 | セントラル硝子株式会社 | Method of cutting brittle material, device for cutting brittle material, method of manufacturing cut brittle material and cut brittle material |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6407360B1 (en) * | 1998-08-26 | 2002-06-18 | Samsung Electronics, Co., Ltd. | Laser cutting apparatus and method |
| US6259058B1 (en) * | 1998-12-01 | 2001-07-10 | Accudyne Display And Semiconductor Systems, Inc. | Apparatus for separating non-metallic substrates |
| DE19952331C1 (en) * | 1999-10-29 | 2001-08-30 | Schott Spezialglas Gmbh | Method and device for quickly cutting a workpiece from brittle material using laser beams |
| DE10041519C1 (en) * | 2000-08-24 | 2001-11-22 | Schott Spezialglas Gmbh | Cutting flat glass plate into several rectangular plates comprises cutting the flat glass plate along cutting lines into several partial plates |
| CN1284737C (en) * | 2000-12-01 | 2006-11-15 | Lg电子株式会社 | Glass cutting method and apparatus |
| WO2003010102A1 (en) * | 2001-07-25 | 2003-02-06 | Kondratenko Vladimir Stepanovi | Cutting method for brittle non-metallic materials (two variants) |
| KR100657196B1 (en) * | 2002-11-06 | 2006-12-14 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | Scribe line forming device and scribe line forming method |
| JP3792639B2 (en) * | 2002-11-08 | 2006-07-05 | 株式会社日本エミック | Cutting device |
| KR100497820B1 (en) * | 2003-01-06 | 2005-07-01 | 로체 시스템즈(주) | Glass-plate cutting machine |
| JP4390552B2 (en) * | 2003-12-25 | 2009-12-24 | 日本板硝子株式会社 | Cutting method of plate brittle material |
| US7723212B2 (en) * | 2004-07-30 | 2010-05-25 | Mitsuboshi Diamond Industrial Co., Ltd | Method for forming median crack in substrate and apparatus for forming median crack in substrate |
| JP2006137169A (en) * | 2004-11-12 | 2006-06-01 | Lemi Ltd | Method and apparatus for breaking and cutting fragile material |
| JP2006248075A (en) * | 2005-03-11 | 2006-09-21 | Tohoku Pioneer Corp | Method and apparatus for working substrate using laser beam |
| KR101081613B1 (en) * | 2005-09-13 | 2011-11-09 | 가부시키가이샤 레미 | Method for scribing fragile material and apparatus for scribing fragile material |
| TWI409122B (en) * | 2007-07-13 | 2013-09-21 | Mitsuboshi Diamond Ind Co Ltd | A method for processing a brittle material substrate and a crack forming apparatus for the method |
| JP5060880B2 (en) * | 2007-09-11 | 2012-10-31 | 三星ダイヤモンド工業株式会社 | Fragment material substrate cutting apparatus and method |
| JP2009084096A (en) * | 2007-09-28 | 2009-04-23 | Omron Laserfront Inc | Apparatus and method for cutting glass |
| TWI466749B (en) * | 2007-11-02 | 2015-01-01 | Mitsuboshi Diamond Ind Co Ltd | Method for Segmentation of Fragile Material Substrate |
-
2009
- 2009-06-30 JP JP2009154573A patent/JP5478957B2/en not_active Expired - Fee Related
-
2010
- 2010-06-07 TW TW099118333A patent/TWI383856B/en not_active IP Right Cessation
- 2010-06-23 KR KR1020100059494A patent/KR101200789B1/en not_active IP Right Cessation
- 2010-06-29 CN CN2010102196687A patent/CN101934427B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110001908A (en) | 2011-01-06 |
| CN101934427B (en) | 2013-12-25 |
| JP2011011340A (en) | 2011-01-20 |
| TWI383856B (en) | 2013-02-01 |
| TW201103683A (en) | 2011-02-01 |
| CN101934427A (en) | 2011-01-05 |
| KR101200789B1 (en) | 2012-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5478957B2 (en) | Cleaving method of brittle material substrate | |
| KR101140164B1 (en) | Method?of?forming?scribe?line?on?substrate?of?brittle?material?and?scribe?line?forming?apparatus | |
| TWI380963B (en) | Method for processing brittle material substrates | |
| TWI385047B (en) | Method for cutting brittle material substrates | |
| TWI392550B (en) | Method for processing brittle material substrates | |
| JP5050099B2 (en) | Processing method of brittle material substrate | |
| JP2011230940A (en) | Cutting method for brittle material substrate | |
| JP2010090010A (en) | Method for cutting brittle material substrate and cutting device | |
| JP4080484B2 (en) | Scribing method and scribing apparatus for brittle material substrate | |
| JP2016069222A (en) | Breaking method and breaking device | |
| JPH08175837A (en) | Method for dividing plate glass and device therefor | |
| KR100636852B1 (en) | Scribing method and cutting method for glass using mode-locked uv-laser | |
| JP2007076953A (en) | Method and device for cutting glass plate | |
| WO2009128315A1 (en) | Method for processing fragile material substrate | |
| JP2010089143A (en) | Method and device for cutting brittle material substrate | |
| JP5373856B2 (en) | Glass substrate scribing method | |
| JPH08231239A (en) | Method for cutting glass ribbon and device therefor | |
| JP5292420B2 (en) | Glass substrate scribing method | |
| JP5444158B2 (en) | Cleaving method of brittle material substrate | |
| WO2014103624A1 (en) | Method for cutting plate glass | |
| JP2006137168A (en) | Method and apparatus for breaking and cutting fragile material | |
| TW201431804A (en) | Scribing method for reinforced glass substrate and scribing device thereof | |
| JP5993684B2 (en) | Method for dividing brittle material substrate and scribing apparatus | |
| JP2013006706A (en) | Cleaving method and apparatus for glass substrate | |
| KR20020047480A (en) | Laser cutting method for non-metallic materials coated with metallic layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120323 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130628 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130716 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130909 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140107 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140212 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5478957 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |