TWI456740B - 動態隨機存取記憶體單元 - Google Patents
動態隨機存取記憶體單元 Download PDFInfo
- Publication number
- TWI456740B TWI456740B TW100133040A TW100133040A TWI456740B TW I456740 B TWI456740 B TW I456740B TW 100133040 A TW100133040 A TW 100133040A TW 100133040 A TW100133040 A TW 100133040A TW I456740 B TWI456740 B TW I456740B
- Authority
- TW
- Taiwan
- Prior art keywords
- fin
- field effect
- effect transistor
- fin field
- trench
- Prior art date
Links
- 230000005669 field effect Effects 0.000 claims 13
- 239000003990 capacitor Substances 0.000 claims 3
- 230000000295 complement effect Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 claims 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/565—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using capacitive charge storage elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
Claims (3)
- 一種動態隨機存取記憶體單元,包含有:一第一鰭式場效電晶體,具有一U型截面,並且包含:一第一鰭片;一第二鰭片,設置為相對於該第一鰭式場效電晶體之該第一鰭片;一溝槽,設置於該第一鰭式場效電晶體之該第一鰭片與該第二鰭片之間;以及一溝槽電容器,用以儲存電荷;以及一第二鰭式場效電晶體,具有一U型截面,係與該第一鰭式場效電晶體相鄰,並且包含有:一第一鰭片,包含:一源極隨耦電晶體;以及一N型摻雜區(N-doped region),位於該源極隨耦電晶體之上;一第二鰭片,設置為相對於該第二鰭式場效電晶體之該第一鰭片,包含:一存取電晶體;一溝槽,設置於該第二鰭式場效電晶體之該第一鰭片與該第二鰭片之間;一溝槽電容器,用以儲存電荷;一寫入字元線,設置於該第二鰭式場效電晶體之該溝槽中; 以及一讀取字元線,設置於該第二鰭式場效電晶體之該溝槽中並且堆疊於該寫入字元線之上;其中當該第二鰭式場效電晶體之該讀取字元線被施以高電位時,該第二鰭式場效電晶體之該第一鰭片與該第一鰭式場效電晶體之該溝槽電容器之間的寄生耦接(parasitic coupling)使資料由該第一鰭式場效電晶體讀取出來。
- 如申請專利範圍第1項所述之動態隨機存取記憶體單元,其中該動態隨機存取記憶體單元可為一互補式金氧半導體影像感測器。
- 如申請專利範圍第1項所述之動態隨機存取記憶體單元,其中該動態隨機存取記憶體單元的面積為4F2 ,其中F係為一標準參數。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/046,798 US8497550B2 (en) | 2011-03-14 | 2011-03-14 | Multi-level DRAM cell using CHC technology |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201238036A TW201238036A (en) | 2012-09-16 |
TWI456740B true TWI456740B (zh) | 2014-10-11 |
Family
ID=46815033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100133040A TWI456740B (zh) | 2011-03-14 | 2011-09-14 | 動態隨機存取記憶體單元 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8497550B2 (zh) |
CN (1) | CN102683346B (zh) |
TW (1) | TWI456740B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10312321B2 (en) | 2015-08-28 | 2019-06-04 | International Business Machines Corporation | Trigate device with full silicided epi-less source/drain for high density access transistor applications |
CN116709765A (zh) * | 2022-02-25 | 2023-09-05 | 长鑫存储技术有限公司 | 半导体结构的制作方法、半导体结构及存储器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5929477A (en) * | 1997-01-22 | 1999-07-27 | International Business Machines Corporation | Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array |
US6114725A (en) * | 1997-01-22 | 2000-09-05 | International Business Machines Corporation | Structure for folded architecture pillar memory cell |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7969776B2 (en) * | 2008-04-03 | 2011-06-28 | Micron Technology, Inc. | Data cells with drivers and methods of making and operating the same |
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2011
- 2011-03-14 US US13/046,798 patent/US8497550B2/en active Active
- 2011-09-14 TW TW100133040A patent/TWI456740B/zh active
- 2011-12-16 CN CN201110425199.9A patent/CN102683346B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5929477A (en) * | 1997-01-22 | 1999-07-27 | International Business Machines Corporation | Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array |
US6077745A (en) * | 1997-01-22 | 2000-06-20 | International Business Machines Corporation | Self-aligned diffused source vertical transistors with stack capacitors in a 4F-square memory cell array |
US6114725A (en) * | 1997-01-22 | 2000-09-05 | International Business Machines Corporation | Structure for folded architecture pillar memory cell |
Also Published As
Publication number | Publication date |
---|---|
TW201238036A (en) | 2012-09-16 |
CN102683346A (zh) | 2012-09-19 |
US20120236629A1 (en) | 2012-09-20 |
CN102683346B (zh) | 2015-02-04 |
US8497550B2 (en) | 2013-07-30 |
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