TWI452160B - Sputtering method - Google Patents

Sputtering method Download PDF

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Publication number
TWI452160B
TWI452160B TW098117298A TW98117298A TWI452160B TW I452160 B TWI452160 B TW I452160B TW 098117298 A TW098117298 A TW 098117298A TW 98117298 A TW98117298 A TW 98117298A TW I452160 B TWI452160 B TW I452160B
Authority
TW
Taiwan
Prior art keywords
output
switching
targets
circuit
short
Prior art date
Application number
TW098117298A
Other languages
English (en)
Chinese (zh)
Other versions
TW201006947A (en
Inventor
Yoshikuni Horishita
Shinobu Matsubara
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW201006947A publication Critical patent/TW201006947A/zh
Application granted granted Critical
Publication of TWI452160B publication Critical patent/TWI452160B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW098117298A 2008-05-26 2009-05-25 Sputtering method TWI452160B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008137089A JP5429771B2 (ja) 2008-05-26 2008-05-26 スパッタリング方法

Publications (2)

Publication Number Publication Date
TW201006947A TW201006947A (en) 2010-02-16
TWI452160B true TWI452160B (zh) 2014-09-11

Family

ID=41376972

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098117298A TWI452160B (zh) 2008-05-26 2009-05-25 Sputtering method

Country Status (6)

Country Link
US (1) US8404089B2 (enExample)
JP (1) JP5429771B2 (enExample)
KR (1) KR101250336B1 (enExample)
CN (1) CN102027154B (enExample)
TW (1) TWI452160B (enExample)
WO (1) WO2009145093A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5124344B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置並びに出力方法
JP5186281B2 (ja) * 2008-05-26 2013-04-17 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
JP5124345B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
KR101421483B1 (ko) * 2010-08-18 2014-07-22 가부시키가이샤 알박 직류 전원 장치
EP2463890A1 (en) * 2010-12-08 2012-06-13 Applied Materials, Inc. Generating plasmas in pulsed power systems
AT513190B9 (de) 2012-08-08 2014-05-15 Berndorf Hueck Band Und Pressblechtechnik Gmbh Vorrichtung und Verfahren zur Plasmabeschichtung eines Substrats, insbesondere eines Pressblechs
EP2879471B1 (en) * 2012-09-07 2017-05-10 Kyosan Electric Mfg. Co., Ltd. Dc power supply device, and control method for dc power supply device
KR20140038771A (ko) * 2012-09-21 2014-03-31 한국과학기술연구원 기판상에 금속박막을 증착하는 방법
EP3035365A1 (en) * 2014-12-19 2016-06-22 TRUMPF Huettinger Sp. Z o. o. Method of detecting an arc occurring during the power supply of a plasma process, control unit for a plasma power supply, and plasma power supply
US9812305B2 (en) * 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
CN105071657B (zh) * 2015-09-11 2017-12-22 范承 双向可调直流电源
GB2548209B (en) 2016-03-07 2018-03-21 Intelligent Growth Solutions Ltd Controllable power and lighting system
WO2018113904A1 (en) * 2016-12-19 2018-06-28 Applied Materials, Inc. Sputter deposition source and method of depositing a layer on a substrate
EP3396698A1 (en) * 2017-04-27 2018-10-31 TRUMPF Hüttinger GmbH + Co. KG Power converter unit, plasma processing equipment and method of controlling several plasma processes

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6096174A (en) * 1996-12-13 2000-08-01 Leybold Systems Gmbh Apparatus for coating a substrate with thin layers
TW200404910A (en) * 2002-05-31 2004-04-01 Shibaura Mechatronics Corp Power supply for discharge, power supply for sputtering, and sputtering system
CN1904133A (zh) * 2005-07-29 2007-01-31 株式会社爱发科 溅射装置和溅射方法
TW200732488A (en) * 2006-01-11 2007-09-01 Ulvac Inc Sputtering method and sputtering system

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
DE9109503U1 (de) * 1991-07-31 1991-10-17 Magtron Magneto Elektronische Geraete Gmbh, 7583 Ottersweier Schaltungsanordnung für ein Stromversorgungsgerät für Geräte und Anlagen der Plasma- und Oberflächentechnik
US5698082A (en) * 1993-08-04 1997-12-16 Balzers Und Leybold Method and apparatus for coating substrates in a vacuum chamber, with a system for the detection and suppression of undesirable arcing
JP3028292B2 (ja) * 1995-10-20 2000-04-04 株式会社ハイデン研究所 正負パルス式高電圧電源
JP3429957B2 (ja) 1996-08-28 2003-07-28 松下電器産業株式会社 スパッタリング方法及び装置
DE19702187C2 (de) * 1997-01-23 2002-06-27 Fraunhofer Ges Forschung Verfahren und Einrichtung zum Betreiben von Magnetronentladungen
JPH11146659A (ja) * 1997-11-05 1999-05-28 Haiden Kenkyusho:Kk 正負パルス式スイッチング電源装置
JP4780972B2 (ja) * 2004-03-11 2011-09-28 株式会社アルバック スパッタリング装置
JP4766368B2 (ja) * 2005-03-10 2011-09-07 独立行政法人物質・材料研究機構 バイポーラパルススパッタリング成膜装置および同装置を用いて作製される薄膜材料の製造方法
US9997338B2 (en) 2005-03-24 2018-06-12 Oerlikon Surface Solutions Ag, Pfäffikon Method for operating a pulsed arc source
EP1864313B1 (de) 2005-03-24 2012-12-19 Oerlikon Trading AG, Trübbach Vakuumplasmagenerator
CN2873799Y (zh) * 2005-04-08 2007-02-28 北京实力源科技开发有限责任公司 一种具有在线清洗功能的磁控溅射靶
JP4320019B2 (ja) * 2006-01-11 2009-08-26 株式会社アルバック スパッタリング装置
US8038850B2 (en) * 2006-06-23 2011-10-18 Qimonda Ag Sputter deposition method for forming integrated circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6096174A (en) * 1996-12-13 2000-08-01 Leybold Systems Gmbh Apparatus for coating a substrate with thin layers
TW200404910A (en) * 2002-05-31 2004-04-01 Shibaura Mechatronics Corp Power supply for discharge, power supply for sputtering, and sputtering system
CN1904133A (zh) * 2005-07-29 2007-01-31 株式会社爱发科 溅射装置和溅射方法
TW200732488A (en) * 2006-01-11 2007-09-01 Ulvac Inc Sputtering method and sputtering system

Also Published As

Publication number Publication date
WO2009145093A1 (ja) 2009-12-03
US8404089B2 (en) 2013-03-26
KR20100135899A (ko) 2010-12-27
JP2009280890A (ja) 2009-12-03
US20110036707A1 (en) 2011-02-17
KR101250336B1 (ko) 2013-04-03
CN102027154B (zh) 2012-07-18
JP5429771B2 (ja) 2014-02-26
CN102027154A (zh) 2011-04-20
TW201006947A (en) 2010-02-16

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