JP5429771B2 - スパッタリング方法 - Google Patents

スパッタリング方法 Download PDF

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Publication number
JP5429771B2
JP5429771B2 JP2008137089A JP2008137089A JP5429771B2 JP 5429771 B2 JP5429771 B2 JP 5429771B2 JP 2008137089 A JP2008137089 A JP 2008137089A JP 2008137089 A JP2008137089 A JP 2008137089A JP 5429771 B2 JP5429771 B2 JP 5429771B2
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JP
Japan
Prior art keywords
output
switching
targets
circuit
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008137089A
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English (en)
Japanese (ja)
Other versions
JP2009280890A (ja
JP2009280890A5 (enExample
Inventor
芳邦 堀下
忍 松原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2008137089A priority Critical patent/JP5429771B2/ja
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to US12/989,438 priority patent/US8404089B2/en
Priority to PCT/JP2009/059275 priority patent/WO2009145093A1/ja
Priority to CN2009801169298A priority patent/CN102027154B/zh
Priority to KR1020107025302A priority patent/KR101250336B1/ko
Priority to TW098117298A priority patent/TWI452160B/zh
Publication of JP2009280890A publication Critical patent/JP2009280890A/ja
Publication of JP2009280890A5 publication Critical patent/JP2009280890A5/ja
Application granted granted Critical
Publication of JP5429771B2 publication Critical patent/JP5429771B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008137089A 2008-05-26 2008-05-26 スパッタリング方法 Active JP5429771B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008137089A JP5429771B2 (ja) 2008-05-26 2008-05-26 スパッタリング方法
PCT/JP2009/059275 WO2009145093A1 (ja) 2008-05-26 2009-05-20 スパッタリング方法
CN2009801169298A CN102027154B (zh) 2008-05-26 2009-05-20 溅射方法
KR1020107025302A KR101250336B1 (ko) 2008-05-26 2009-05-20 스퍼터링 방법
US12/989,438 US8404089B2 (en) 2008-05-26 2009-05-20 Sputtering method
TW098117298A TWI452160B (zh) 2008-05-26 2009-05-25 Sputtering method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008137089A JP5429771B2 (ja) 2008-05-26 2008-05-26 スパッタリング方法

Publications (3)

Publication Number Publication Date
JP2009280890A JP2009280890A (ja) 2009-12-03
JP2009280890A5 JP2009280890A5 (enExample) 2011-04-28
JP5429771B2 true JP5429771B2 (ja) 2014-02-26

Family

ID=41376972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008137089A Active JP5429771B2 (ja) 2008-05-26 2008-05-26 スパッタリング方法

Country Status (6)

Country Link
US (1) US8404089B2 (enExample)
JP (1) JP5429771B2 (enExample)
KR (1) KR101250336B1 (enExample)
CN (1) CN102027154B (enExample)
TW (1) TWI452160B (enExample)
WO (1) WO2009145093A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5124344B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置並びに出力方法
JP5186281B2 (ja) * 2008-05-26 2013-04-17 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
JP5124345B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
KR101421483B1 (ko) * 2010-08-18 2014-07-22 가부시키가이샤 알박 직류 전원 장치
EP2463890A1 (en) * 2010-12-08 2012-06-13 Applied Materials, Inc. Generating plasmas in pulsed power systems
AT513190B9 (de) 2012-08-08 2014-05-15 Berndorf Hueck Band Und Pressblechtechnik Gmbh Vorrichtung und Verfahren zur Plasmabeschichtung eines Substrats, insbesondere eines Pressblechs
EP2879471B1 (en) * 2012-09-07 2017-05-10 Kyosan Electric Mfg. Co., Ltd. Dc power supply device, and control method for dc power supply device
KR20140038771A (ko) * 2012-09-21 2014-03-31 한국과학기술연구원 기판상에 금속박막을 증착하는 방법
EP3035365A1 (en) * 2014-12-19 2016-06-22 TRUMPF Huettinger Sp. Z o. o. Method of detecting an arc occurring during the power supply of a plasma process, control unit for a plasma power supply, and plasma power supply
US9812305B2 (en) * 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
CN105071657B (zh) * 2015-09-11 2017-12-22 范承 双向可调直流电源
GB2548209B (en) 2016-03-07 2018-03-21 Intelligent Growth Solutions Ltd Controllable power and lighting system
WO2018113904A1 (en) * 2016-12-19 2018-06-28 Applied Materials, Inc. Sputter deposition source and method of depositing a layer on a substrate
EP3396698A1 (en) * 2017-04-27 2018-10-31 TRUMPF Hüttinger GmbH + Co. KG Power converter unit, plasma processing equipment and method of controlling several plasma processes

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE9109503U1 (de) * 1991-07-31 1991-10-17 Magtron Magneto Elektronische Geraete Gmbh, 7583 Ottersweier Schaltungsanordnung für ein Stromversorgungsgerät für Geräte und Anlagen der Plasma- und Oberflächentechnik
US5698082A (en) * 1993-08-04 1997-12-16 Balzers Und Leybold Method and apparatus for coating substrates in a vacuum chamber, with a system for the detection and suppression of undesirable arcing
JP3028292B2 (ja) * 1995-10-20 2000-04-04 株式会社ハイデン研究所 正負パルス式高電圧電源
JP3429957B2 (ja) 1996-08-28 2003-07-28 松下電器産業株式会社 スパッタリング方法及び装置
DE19651811B4 (de) * 1996-12-13 2006-08-31 Unaxis Deutschland Holding Gmbh Vorrichtung zum Belegen eines Substrats mit dünnen Schichten
DE19702187C2 (de) * 1997-01-23 2002-06-27 Fraunhofer Ges Forschung Verfahren und Einrichtung zum Betreiben von Magnetronentladungen
JPH11146659A (ja) * 1997-11-05 1999-05-28 Haiden Kenkyusho:Kk 正負パルス式スイッチング電源装置
CN100496182C (zh) * 2002-05-31 2009-06-03 芝浦机械电子装置股份有限公司 放电电源、溅射电源、以及溅射装置
JP4780972B2 (ja) * 2004-03-11 2011-09-28 株式会社アルバック スパッタリング装置
JP4766368B2 (ja) * 2005-03-10 2011-09-07 独立行政法人物質・材料研究機構 バイポーラパルススパッタリング成膜装置および同装置を用いて作製される薄膜材料の製造方法
US9997338B2 (en) 2005-03-24 2018-06-12 Oerlikon Surface Solutions Ag, Pfäffikon Method for operating a pulsed arc source
EP1864313B1 (de) 2005-03-24 2012-12-19 Oerlikon Trading AG, Trübbach Vakuumplasmagenerator
CN2873799Y (zh) * 2005-04-08 2007-02-28 北京实力源科技开发有限责任公司 一种具有在线清洗功能的磁控溅射靶
JP4922580B2 (ja) * 2005-07-29 2012-04-25 株式会社アルバック スパッタリング装置及びスパッタリング方法
JP4963023B2 (ja) * 2006-01-11 2012-06-27 株式会社アルバック スパッタリング方法及びスパッタリング装置
JP4320019B2 (ja) * 2006-01-11 2009-08-26 株式会社アルバック スパッタリング装置
US8038850B2 (en) * 2006-06-23 2011-10-18 Qimonda Ag Sputter deposition method for forming integrated circuit

Also Published As

Publication number Publication date
WO2009145093A1 (ja) 2009-12-03
US8404089B2 (en) 2013-03-26
KR20100135899A (ko) 2010-12-27
TWI452160B (zh) 2014-09-11
JP2009280890A (ja) 2009-12-03
US20110036707A1 (en) 2011-02-17
KR101250336B1 (ko) 2013-04-03
CN102027154B (zh) 2012-07-18
CN102027154A (zh) 2011-04-20
TW201006947A (en) 2010-02-16

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