US8404089B2 - Sputtering method - Google Patents

Sputtering method Download PDF

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Publication number
US8404089B2
US8404089B2 US12/989,438 US98943809A US8404089B2 US 8404089 B2 US8404089 B2 US 8404089B2 US 98943809 A US98943809 A US 98943809A US 8404089 B2 US8404089 B2 US 8404089B2
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targets
output
switching
short
power
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US20110036707A1 (en
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Yoshikuni Horishita
Shinobu Matsubara
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Ulvac Inc
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Ulvac Inc
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Assigned to ULVAC, INC. reassignment ULVAC, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MATSUBARA, SHINOBU, HORISHITA, YOSHIKUNI
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Definitions

  • the present invention relates to a sputtering method for forming a predetermined thin film on the surface of a substrate to be processed such as of glass make and the like, and relates in particular to a sputtering method for sputtering each of the targets by supplying power in a bipolar pulsed mode to respective targets making a pair.
  • a sputtering apparatus in which a plurality of targets are disposed in parallel with each other in a manner to lie opposite to the substrate to be processed, inside a vacuum chamber.
  • plural sets of bipolar pulsed power supplies are assigned to respective pairs of targets. While each of the bipolar pulsed power supplies is operated in synchronization, power is supplied (outputted) to each of the targets by alternately changing the polarity.
  • Each of the targets is thus switched alternately between anode electrode and cathode electrode. Glow discharge is caused to be generated between the anode electrode and the cathode electrode to thereby form a plasma atmosphere so that each of the targets is sputtered (patent document 1).
  • the bipolar pulsed power supply is constituted by a rectifying circuit which supplies DC current, and a MOSFET bridge circuit which is connected to the positive and the negative output ends of the rectifying circuit and which is made up of four switching elements.
  • Each of the switching elements is appropriately operated by the control means to charge pulse voltage at a predetermined frequency to the targets that make a pair. According to this arrangement, there is an advantage in that the electric charges to be accumulated on the surface of the targets are cancelled when an opposite phase voltage is charged, thereby obtaining a stable discharge.
  • this invention has a problem of providing a sputtering method which is capable of charging power to the targets with high accuracy while minimizing the influence of the switching noises with a simple control, and which in turn enables to form a good thin film.
  • the sputtering method comprises: supplying power to each pair of targets which are disposed in a plurality of pieces arranged in parallel with and at a predetermined distance from each other, opposite to a substrate to be processed inside a sputtering chamber, the power being supplied in a bipolar pulsed mode by switching ON or OFF of each of switching elements in a bridge circuit connected to positive and negative DC output ends from a DC power supply source; alternately switching each of the targets to anode electrode and cathode electrode to cause glow discharge to take place between the anode electrode and the cathode electrode, whereby a plasma atmosphere is formed to sputter the targets.
  • the output-short-circuiting switching element since the output-short-circuiting switching element is provided, the number of switching elements to be operated at the time of output switching of each of the targets can be reduced. Further, since the timing of switching of the output-short-circuiting switching element is mutually deviated, large switching noises can be prevented from getting generated at the same time. As a result of these combined effects, even if the number of the bipolar pulsed power supplies to be connected in parallel increases, the power can be charged with higher accuracy to each of the targets that make respective pairs, thereby enabling to form a good thin film.
  • the switching loss can be made to occur only in a single output-short-circuiting switching element.
  • its control is easy because it is sufficient only to control the timing of switching ON or OFF of the output-short-circuiting switching element.
  • the supplying of power to each of the targets is performed through a bus bar which connects the output ends of the bridge circuit and each of the targets. Then, as compared with the case in which, e.g., a conventional AC cable made by twisting a large number of wires is used, the case in this invention can be made less subject to the effects of the noises. Therefore, the power can be charged to a pair of targets with higher accuracy.
  • This invention preferably further comprises: detecting output current between the pair of targets; recognizing a phenomenon in which an absolute value of the output current exceeds a steady output current value as a pre-stage phenomenon of arcing; and extinguishing the arcing by cutting off the output to each of the targets by means of the output-short-circuiting switching element. Then, control can be made with better response than the case in which the processing of extinguishing the arcing is made by controlling the two switching elements that are being outputted. Even during this processing, there occurs little or no switching loss to each of the switching elements in the bridge circuit, whereby the durability can be further improved.
  • this invention has an effect in that the sputtering method of this invention can be made less subject to the effect of switching noises by a simple control and that the power can be charged with higher accuracy.
  • reference numeral 1 denotes a sputtering apparatus for carrying out the sputtering method of this invention.
  • the sputtering apparatus 1 is of an in-line system, and has a vacuum chamber 11 which can maintain a predetermined vacuum degree through an evacuating means such as a rotary pump, a turbo-molecular pump and the like (not illustrated), whereby a sputtering chamber 11 a is constituted.
  • a substrate transport means 2 which has a known construction and has, e.g., a carrier 21 on which a substrate S to be processed is mounted in position.
  • a cathode electrode C On a lower side of the vacuum chamber 11 there is disposed a cathode electrode C.
  • the cathode electrode C has eight targets 31 a through 31 h which are disposed so as to lie opposite to the substrate S to be processed.
  • Each of the targets 31 a through 31 h is made of Al, Ti, Mo, indium and tin oxide (ITO) or an alloy of indium and tin oxide, and the like into the same shape, e.g., substantially into a rectangular parallelopiped (rectangle in plan view) in a known method depending on the composition of the thin film to be formed on the surface of the substrate S to be processed.
  • Each of the targets 31 a through 31 h is coupled, through a bonding material such as indium, tin, and the like, to a backing plate 32 which cools the targets during sputtering.
  • each of the targets 31 a through 31 h are arranged so that adjoining two make a pair, and that four bipolar pulsed power supplies E 1 through E 4 which are assigned to the targets making respective pairs are connected thereto.
  • the bipolar pulsed power supplies E 1 through E 4 have the same structure and, as illustrated in FIG. 2 , are each made up of a DC power supply unit 4 which enables to supply DC power, and an oscillation unit 5 which controls the output (power supply) to each of the targets 31 a , 31 b ( 31 c and 31 d , 31 e and 31 f , 31 g and 31 h ).
  • the DC power supply unit 4 has: a first CPU circuit 41 which controls the operation thereof; an input part 42 which receives input of commercial AC power supply (three-phase AC 200V or 400V); and a rectifying circuit 43 which is made up of six diodes 43 a and rectifies the inputted AC power to DC power. Through positive and negative DC power lines 44 a , 44 b , DC power is outputted to the oscillation unit 5 .
  • the DC power supply unit 4 is provided with: a switching transistor 45 which is disposed between DC power lines 44 a , 44 b ; and an output oscillation driver circuit 46 which is connected to the first CPU circuit 11 ( 41 ) in a manner capable of communication therewith so as to control the ON or OFF of the switching transistor 45 .
  • a detection circuit 47 a which detects the current and voltage thereof.
  • the current and voltage detected by the detection circuit 47 a are arranged to be inputted to the first CPU circuit 41 through an AD converter circuit 47 b.
  • the oscillation unit 5 is provided with: a second CPU circuit 51 which is connected to the first CPU circuit 41 in a manner capable of communication therewith; a bridge circuit 52 which is made up of first through fourth, a total of four, switching transistors SW 1 through SW 4 which are connected to the positive and negative DC power lines 14 a , 14 b ; and an output oscillation driver circuit 53 which is connected to the second CPU circuit 51 in a manner capable of communication therewith and controls the ON or OFF switching of each of the switching transistors SW 1 through SW 4 .
  • a switching transistor SW 0 for short-circuiting the output also called “output-short-circuiting switching transistor” whose ON-OFF switching is controlled by the output oscillation driver circuit 43 .
  • the switching of each of the switching transistors SW 1 through SW 4 in the bridge circuit 52 can be made.
  • a central control means 6 which is made up of a CPU connected, in a manner capable of communication, with the second CPU circuit 51 of each of the bipolar pulsed power supplies E 1 through E 4 .
  • this central control means 6 the switching timing of the output-short-circuiting switching element SW 0 is mutually deviated for each of the bipolar pulsed power supplies E 1 through E 4 , i.e., mutually deviated from bridge circuit 52 to bridge circuit 52 .
  • each of the switching transistors SW 1 through SW 4 is operated: so that the ON-OFF timing can be reversed with respect to the first and the fourth switching transistors SW 1 , SW 4 , and with respect to the second and the third switching transistors SW 2 , SW 3 of each of the bipolar pulsed power supplies E 1 through E 4 ; and so that the polarity to the mutually adjoining targets 41 a through 41 h can be reversed.
  • the short-circuiting of the switching transistor SW 0 is released for a predetermined period of time by the output from the central control means 6 so that output can be made to one 41 a , 41 c , 41 e , 41 g of the targets that make respective pairs.
  • each of the targets 41 a through 41 h is supplied with power in a bipolar pulsed mode at a predetermined frequency, thereby performing synchronized operation.
  • each of the output-short-circuiting switching transistors SW 0 of each of the bipolar pulsed power supplies E 1 through E 4 may alternatively be divided into a plurality of groups so that respective ones making respective sets can be switched simultaneously.
  • the oscillation unit 5 that is arranged to be separated from the power supply unit 4 in close proximity to the vacuum chamber 11 ; and to use bus bars as the output lines 54 a , 54 b that connect the output ends of the bridge circuit 52 to the targets 31 a through 31 h .
  • the bus bars are made, e.g., of Cu, Au, Ag or an aluminum alloy which is high in electric conductivity, and are formed extendible and contractible so as to absorb the possible errors in distance between the oscillation unit 5 and the targets 31 a through 31 h .
  • this arrangement as compared with the case of using known AC cables made, e.g., by twisting a multiplicity of cables, this arrangement is less subject to the influence of the noises. Therefore, power can be charged to the pair of targets 31 a through 31 h with higher accuracy.
  • the carrier 21 on which the substrate S to be processed has been set in position is transported by the substrate transport means 2 to the position lying opposite to the targets 31 a through 31 h that are disposed in is parallel with each other.
  • a predetermined pressure e.g. 10 ⁇ 5 Pa
  • a sputtering gas and a reactive gas
  • Power is charged to the targets 31 a through 31 h through bipolar pulsed power supplies E 1 through E 4 .
  • Each of the targets 31 a through 31 h is alternately switched between anode electrode and cathode electrode. Glow discharge is thus caused to be generated between the anode electrode and the cathode electrode, thereby forming a plasma atmosphere.
  • Each of the targets 31 a through 31 h is thus sputtered, thereby forming a predetermined thin film on the surface of the substrate S to be processed.
  • an arc detection control circuit 57 which receives inputs in the form of the output current and the output voltage as detected by the detection circuit 55 , the arc detection control circuit 57 being provided in a manner capable of communication with the second CPU circuit 51 (see FIG. 1 ). If the output current varies beyond a certain range in any one of the bipolar pulsed power supplies E 1 through E 4 , it is taken or recognized as a pre-stage phenomenon of arcing (micro-arc). By performing the processing of arc-extinction of arcing, the generation of arcing with a large arc current is suppressed.
  • the arc detection control circuit 57 will recognize it as a pre-stage phenomenon of arcing.
  • the output-short-circuiting switching transistor SW 0 is short-circuited (ON) by the output oscillation driver circuit 53 , through the second CPU circuit and the arc detection control circuit 57 .
  • the output-short-circuiting switching transistor SW 0 is short-circuited (ON)
  • each of the switching transistors SW 1 through SW 4 in the bridge circuit 52 is held in a state of outputting to one 31 a or 31 b ( 31 c or 31 d , 31 e or 31 f , 31 g or 31 h ) of the targets.
  • the output to the targets 31 a through 31 h will be cut-off (micro-arc processing).
  • the switching transistor 45 is thus switched ON by the control of the first CPU circuit 41 , and the output from the DC power supply unit 4 is stopped (hard-arc processing). Since, during this processing, little or no switching loss will occur to each of the switching transistors SW 1 through SW 4 , the durability can be further improved.
  • FIG. 1 is a block diagram schematically showing an arrangement of a sputtering apparatus to perform the sputtering method according to this invention.
  • FIG. 2 is a block diagram schematically showing an arrangement of a bipolar pulsed power supply to be used in the sputtering apparatus shown in FIG. 1 .
  • FIG. 3 is a diagram showing the timing of operation of switching elements.
  • FIG. 4 is a diagram showing a micro-arc processing in each of the bipolar pulsed power supplies.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
US12/989,438 2008-05-26 2009-05-20 Sputtering method Active 2030-01-07 US8404089B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008137089A JP5429771B2 (ja) 2008-05-26 2008-05-26 スパッタリング方法
JP2008-137089 2008-05-26
PCT/JP2009/059275 WO2009145093A1 (ja) 2008-05-26 2009-05-20 スパッタリング方法

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US20110036707A1 US20110036707A1 (en) 2011-02-17
US8404089B2 true US8404089B2 (en) 2013-03-26

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US12/989,438 Active 2030-01-07 US8404089B2 (en) 2008-05-26 2009-05-20 Sputtering method

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US (1) US8404089B2 (enExample)
JP (1) JP5429771B2 (enExample)
KR (1) KR101250336B1 (enExample)
CN (1) CN102027154B (enExample)
TW (1) TWI452160B (enExample)
WO (1) WO2009145093A1 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US20190090330A1 (en) * 2016-03-07 2019-03-21 Intelligent Growth Solutions Limited Controllable power and lighting system

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JP5124344B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置並びに出力方法
JP5186281B2 (ja) * 2008-05-26 2013-04-17 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
JP5124345B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
KR101421483B1 (ko) * 2010-08-18 2014-07-22 가부시키가이샤 알박 직류 전원 장치
EP2463890A1 (en) * 2010-12-08 2012-06-13 Applied Materials, Inc. Generating plasmas in pulsed power systems
AT513190B9 (de) 2012-08-08 2014-05-15 Berndorf Hueck Band Und Pressblechtechnik Gmbh Vorrichtung und Verfahren zur Plasmabeschichtung eines Substrats, insbesondere eines Pressblechs
EP2879471B1 (en) * 2012-09-07 2017-05-10 Kyosan Electric Mfg. Co., Ltd. Dc power supply device, and control method for dc power supply device
KR20140038771A (ko) * 2012-09-21 2014-03-31 한국과학기술연구원 기판상에 금속박막을 증착하는 방법
EP3035365A1 (en) * 2014-12-19 2016-06-22 TRUMPF Huettinger Sp. Z o. o. Method of detecting an arc occurring during the power supply of a plasma process, control unit for a plasma power supply, and plasma power supply
US9812305B2 (en) * 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
CN105071657B (zh) * 2015-09-11 2017-12-22 范承 双向可调直流电源
WO2018113904A1 (en) * 2016-12-19 2018-06-28 Applied Materials, Inc. Sputter deposition source and method of depositing a layer on a substrate
EP3396698A1 (en) * 2017-04-27 2018-10-31 TRUMPF Hüttinger GmbH + Co. KG Power converter unit, plasma processing equipment and method of controlling several plasma processes

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190090330A1 (en) * 2016-03-07 2019-03-21 Intelligent Growth Solutions Limited Controllable power and lighting system
US10667370B2 (en) * 2016-03-07 2020-05-26 Intelligent Growth Solutions Limited Controllable power and lighting system
US11172557B2 (en) 2016-03-07 2021-11-09 Intelligent Growth Solutions Limited Controllable power and lighting system

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WO2009145093A1 (ja) 2009-12-03
KR20100135899A (ko) 2010-12-27
TWI452160B (zh) 2014-09-11
JP2009280890A (ja) 2009-12-03
US20110036707A1 (en) 2011-02-17
KR101250336B1 (ko) 2013-04-03
CN102027154B (zh) 2012-07-18
JP5429771B2 (ja) 2014-02-26
CN102027154A (zh) 2011-04-20
TW201006947A (en) 2010-02-16

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